CN208225904U

CN208225904U - RGBW light emitting diode (LED) chip with vertical structure and LED light based on GaN material

Info

Publication number: CN208225904U
Application number: CN201721796155.6U
Authority: CN
Inventors: 左瑜
Original assignee: Xian Zhisheng Ruixin Semiconductor Technology Co Ltd
Current assignee: Xian Zhisheng Ruixin Semiconductor Technology Co Ltd
Priority date: 2017-12-20
Filing date: 2017-12-20
Publication date: 2018-12-11
Anticipated expiration: 2027-12-20

Abstract

The utility model provides a kind of RGBW light emitting diode (LED) chip with vertical structure and LED light based on GaN material, and LED chip includes: the first blue light emitting component, the first red light-emitting component, the first green luminescence component, white-light emitting component, public positive electrode component, the first blue light emitting component negative electrode, the first red light-emitting component negative electrode, the first green luminescence component negative electrode and white-light emitting component cathode.The utility model can generate the light of multiple color in single-chip, and the dosage of fluorescent powder is less；2. integrated level improves, LED cost can decline；3. color temperature adjustment is more flexible.

Description

RGBW light emitting diode (LED) chip with vertical structure and LED light based on GaN material

Technical field

The utility model relates to technical field of semiconductors more particularly to a kind of RGBW vertical structure LEDs based on GaN material Chip and LED light.

Background technique

LED light source is become increasingly popular to apply in lighting area.Usual LED light source is cooperated by LED luminescence chip The light of fluorescent powder sending various colors.In the prior art, individual luminescence chip can only issue monochromatic light, if other need to be synthesized The light of color just needs to mix the luminescence chip of different colours, and fills a large amount of fluorescent powder, and thus existing can The problem poor by property, encapsulation difficulty is big.In addition, light, which is incident in fluorescent powder glue-line, will appear strong scattering phenomenon, so that Fluorescent powder glue-line causes a large amount of light to be reflected the absorption of light, i.e., can significantly subtract transmitted through the light of phosphor powder layer It is few.Therefore, how to design the novel LED chip of one kind just becomes of crucial importance.

Utility model content

Therefore, to solve technological deficiency and deficiency of the existing technology, the utility model proposes one kind to be based on GaN material The RGBW light emitting diode (LED) chip with vertical structure of material, comprising:

It is first blue light emitting component, the first red light-emitting component, the first green luminescence component, white-light emitting component, public Positive electrode component, the first blue light emitting component negative electrode, the first red light-emitting component negative electrode, the first green luminescence component negative electricity Pole and white-light emitting component cathode, wherein

The public positive electrode component is set to the first blue light emitting component, the first red light-emitting component, institute It states on the first green luminescence component and the white-light emitting component, it is the first blue light emitting component negative electrode, described first red Light luminescence component negative electrode, the first green luminescence component negative electrode are respectively arranged at the first blue light emitting component, institute It states on the first red light-emitting component and the first green luminescence component, the white-light emitting component cathode is set to the white light In the group that shines.

In a kind of embodiment of the utility model, the chip further include:

First SiO₂Dividing wall is set to and is isolated between the blue light emitting component and the red light-emitting component；

2nd SiO₂Dividing wall is set to and is isolated between the red light-emitting component and the green luminescence component；

White light dividing wall is set to and is isolated between the green luminescence component and the white-light emitting component.

In a kind of embodiment of the utility model, the white-light emitting component includes the second blue light emitting component, the Two red light-emitting components, the second green luminescence component, the second blue light emitting component, the second red light-emitting component and Two green luminescence components are for synthesizing white light under the control of driving voltage.

In a kind of embodiment of the utility model, the public positive electrode component includes:

First metal contact layer is set to the first blue light emitting component, the first red light-emitting component, described One green luminescence component, the second blue light emitting component, the second red light-emitting component and the second green luminescence group Part upper surface；

Reflective metal layer is set on first metal contact layer；

Second metal contact layer is set on the reflective metal layer；

Conductive substrate layer is set on second metal contact layer.

In a kind of embodiment of the utility model, the white-light emitting component cathode includes:

Second blue light emitting component negative electrode, is set on the second blue light emitting component；

Second red light-emitting component negative electrode, is set on the second red light-emitting component；

Second green luminescence component negative electrode, is set on the second green luminescence component.

In a kind of embodiment of the utility model, the blue light emitting component successively includes:

First GaN buffer layer, the first GaN stabilized zone, the first n-type GaN layer, the first InGaN/GaN multiple quantum well active layer (104), the first barrier layer p-type AlGaN (105) and the first p-type GaN layer (106).

In a kind of embodiment of the utility model, the red light-emitting component successively includes:

2nd GaN buffer layer, N-shaped GaAs buffer layer, N-shaped GaAs stabilized zone, GalnP/A1GaInP multiple quantum wells are active Layer, the barrier layer p-type A1GaInP and p-type GaAs contact layer.

In a kind of embodiment of the utility model, the green luminescence component successively includes:

3rd GaN buffer layer, the 2nd GaN stabilized zone, the second n-type GaN layer, the 2nd InGaN/GaN multiple quantum well active layer, Second barrier layer p-type AlGaN and the second p-type GaN layer.

The utility model also provides a kind of LED light, including LED support, further includes that any of the above embodiment refers to LED chip, the LED chip are loaded on the LED support.

The beneficial effects of the utility model have: 1. can generate the light of multiple color in single-chip, and the dosage of fluorescent powder is less； 2. integrated level improves, LED cost can decline；3. color temperature adjustment is more flexible.

Through the following detailed description with reference to the accompanying drawings, the other aspects and feature of the utility model become obvious.But it answers When knowing, which is only the purpose design explained, not as the restriction of the scope of the utility model, this is because its It should refer to appended claims.It should also be noted that unless otherwise noted, it is not necessary to which scale attached drawing, they are only Attempt conceptually to illustrate structure and process described herein.

Detailed description of the invention

Below in conjunction with attached drawing, specific embodiment of the present utility model is described in detail.

Fig. 1 is a kind of RGBW light emitting diode (LED) chip with vertical structure structural schematic diagram based on GaN material provided by the utility model；

Fig. 2 is another RGBW light emitting diode (LED) chip with vertical structure structural representation based on GaN material provided by the utility model Figure；

Fig. 3 is the flow diagram for preparing blue light emitting component over the substrate；

Fig. 4 is a kind of first InGaN/GaN multiple quantum well active layer structural schematic diagram provided by the utility model；

Fig. 5 is the first SiO provided by the utility model₂The position view of dividing wall；

Fig. 6 is the flow diagram provided by the utility model that red light-emitting component is prepared in the feux rouges wick slot；

Fig. 7 is a kind of GalnP/A1GaInP multiple quantum well active layer structural schematic diagram provided by the utility model；

It is the 2nd SiO provided by the utility model that Fig. 8, which is provided by the utility model,₂The position view of dividing wall；

Fig. 9 is the flow diagram provided by the utility model that green luminescence component is prepared in the green light wick slot；

Figure 10 is provided by the utility model by etching blue light emitting component, red light-emitting component and green luminescence component And the white-light emitting component structure diagram formed；

Figure 11 is a kind of LED chip structure schematic diagram provided by the utility model.

Specific embodiment

To keep the above objects, features, and advantages of the utility model more obvious and easy to understand, with reference to the accompanying drawing to this The specific embodiment of utility model is described in detail.

Embodiment one

Referring to Figure 1, Fig. 1 is a kind of RGBW light emitting diode (LED) chip with vertical structure knot based on GaN material provided by the utility model Structure schematic diagram, the chip include:

Further, on the basis of the above embodiment, chip provided by the utility model further include:

Further, on the basis of the above embodiment, the white-light emitting component include the second blue light emitting component, Second red light-emitting component, the second green luminescence component, the second blue light emitting component, the second red light-emitting component and Second green luminescence component is for synthesizing white light under the control of driving voltage.

Further, on the basis of the above embodiment, the public positive electrode component includes:

Reflective metal layer is set on first metal contact layer；

Second metal contact layer is set on the reflective metal layer；

Conductive substrate layer is set on second metal contact layer.

Further, on the basis of the above embodiment, the white-light emitting component cathode includes:

Specifically, Fig. 2 is referred to, Fig. 2 is another RGBW vertical structure based on GaN material provided by the utility model LED chip structure schematic diagram.

Further, on the basis of the above embodiment, the blue light emitting component successively includes:

Further, on the basis of the above embodiment, the red light-emitting component successively includes:

Further, on the basis of the above embodiment, the green luminescence component successively includes:

Embodiment two

The present embodiment on the basis of example 1, elaborates to the preparation method of the LED chip in embodiment one.

A kind of preparation method of the LED chip of tetra- color light source of RGBW based on GaN material provided by the utility model, the party Method is specifically as follows:

Select substrate；

Blue light emitting component is prepared over the substrate, wherein the blue light emitting component includes GaN material；

Selective etch is carried out to form feux rouges wick slot to the blue light emitting component；

Red light-emitting component is prepared in the feux rouges wick slot；

Selective etch is carried out to form green light wick slot to the blue light emitting component；

Green luminescence component is prepared in the green light wick slot；

The blue light emitting component, the red light-emitting component and the green luminescence component are etched to form white-light emitting Component；

In the blue light emitting component, the red light-emitting component, the green luminescence component and the white-light emitting group Public positive electrode is prepared on part；

In the blue light emitting component, the red light-emitting component, the green luminescence component and the white-light emitting group Blue light negative electrode, feux rouges negative electrode, green light negative electrode and white light negative electrode are prepared on part, to realize the RGBW based on GaN material The preparation of four color LED chips.

Further, on the basis of the above embodiment, Fig. 3 is referred to, Fig. 3 is to prepare blue light hair over the substrate The flow diagram of optical assembly, specific method can be with are as follows:

The first GaN buffer layer (101) is prepared on the substrate (11)；

The first GaN stabilized zone (102) is prepared on the first GaN buffer layer (101)；

The first n-type GaN layer (103) are prepared on the first GaN stabilized zone (102)；

Prepare the first InGaN/GaN multiple quantum well active layer (104) on first n-type GaN layer (103), described the One InGaN/GaN multiple quantum well active layer (104) includes multiple GaN barrier layers (104a) and multiple InGaN quantum well layers (104b), wherein the GaN barrier layer (104a) and the InGaN quantum well layer (104b) are arranged alternately, that is, the GaN gesture Barrier layer (104a) and InGaN quantum well layer (104b) are arranged in the period.In one embodiment, the first InGaN/GaN The period of multiple quantum well active layer is 8~30.Also, each InGaN quantum well layer (104b) is received with a thickness of 1.5~3.5 Rice, the content of In are 10~20%；Each GaN barrier layer (104a) is with a thickness of 5~10 nanometers；Preferably, InGaN quantum The preparation temperature of trap (104b) is 650~750 DEG C, and the preparation temperature of GaN potential barrier (104a) is 750~850 DEG C；In content may be used also To determine according to optical wavelength demand, In content is higher, and optical wavelength is longer, typically, the first InGaN/GaN Multiple-quantum The period of trap active layer is 20.Specifically, Fig. 4 is referred to, Fig. 4 is that a kind of first InGaN/GaN provided by the utility model is more Quantum well active layer structure schematic diagram.

The first barrier layer p-type AlGaN (105) is prepared on the first InGaN/GaN multiple quantum well active layer (104)；

The first p-type GaN layer (106) are prepared on the barrier layer the first p-type AlGaN (105), to complete blue light emitting group The preparation of part.

Further, on the basis of the above embodiment, selective etch is carried out with shape to the blue light emitting component At feux rouges wick slot, it is specifically as follows:

Use pecvd process on first p-type GaN layer (106) deposition thickness for 300~800 nanometers first SiO₂Layer；

Using wet-etching technology in the first SiO₂Specific location etches at least one rectangular window on layer；It is described Rectangular window length or width is all larger than 50 microns and less than 300 micron；

Continued along the direction vertical with the substrate (11) using dry etch process within the scope of the rectangular window The blue light emitting component is etched, until being etched at the upper surface of the substrate (11) to form the first groove；Then, it removes First SiO₂Layer；

In the first p-type GaN layer (106) upper surface, the upper surface of the substrate (11) and the side of first groove The 2nd SiO that wall precipitates with a thickness of 20~100 nanometers₂Layer；

The upper surface of the first p-type GaN layer (106) upper surface and the substrate (11) is etched using dry etch process The 2nd SiO₂Layer is to form the first SiO in the side wall of first groove₂Dividing wall (12), the first SiO₂Dividing wall (12) for the blue light emitting component and the red light-emitting component to be isolated.Specifically, Fig. 5 is referred to, Fig. 5 is that this is practical new The first SiO that type provides₂The position view of dividing wall.

Further, on the basis of the above embodiment, Fig. 6 is referred to, Fig. 6 is provided by the utility model described The flow diagram that red light-emitting component is prepared in feux rouges wick slot prepares red light-emitting component tool in the feux rouges wick slot Body can be carried out as follows:

The 2nd GaN buffer layer (401) with a thickness of 2000~3000 nanometers is prepared in the feux rouges wick slot；

Being prepared on the 2nd GaN buffer layer (401) with a thickness of 1000~2000 nanometers, doping concentration is 1 × 10¹⁷~ 1×10¹⁸cm^-3N-shaped GaAs buffer layer (402)；

Being prepared on the GaAs buffer layer (402) with a thickness of 500~1000 nanometers, doping concentration is 1 × 10¹⁸~5 × 10¹⁹cm^-3N-shaped GaAs stabilized zone (403)；

GalnP/A1GaInP multiple quantum well active layer (404) are prepared on the GaAs stabilized zone (403)；

The GalnP/A1GaInP multiple quantum well active layer (404) includes multiple GalnP barrier layers (404a) and multiple A1GaInP barrier layer (404b), wherein the GalnP barrier layer (404a) and the A1GaInP barrier layer (404b) are alternately arranged Cloth, that is, the multiple GalnP barrier layer (404a) and the multiple A1GaInP barrier layer (404b) are in periodic arrangement, and And each A1GaInP barrier layer (404b), with a thickness of 5~10 nanometers, the content of Al is 10~40%；It is each described GalnP barrier layer (404a) is with a thickness of 5~10 nanometers；Specifically, Fig. 7 is referred to, Fig. 7 is one kind provided by the utility model GalnP/A1GaInP multiple quantum well active layer structural schematic diagram.

The barrier layer p-type A1GaInP (405) are prepared on the GalnP/A1GaInP multiple quantum well active layer (404)；

Being prepared on the barrier layer the p-type A1GaInP (405) with a thickness of 100~500 nanometers, doping concentration is 1 × 10¹⁷ ~1 × 10¹⁹cm^-3P-type GaAs contact layer (406), to complete the preparation of red light-emitting component.

Further, on the basis of the above embodiment, selective etch is carried out with shape to the blue light emitting component At green light wick slot, it is specifically as follows:

Use pecvd process on first p-type GaN layer (106) deposition thickness for 300~800 nanometers of third SiO₂Layer；

Using wet-etching technology in the 3rd SiO₂At least one second rectangular window at specific location erosion on layer； The length or width of second rectangular window is all larger than 50 microns and less than 300 micron；

Dry etch process is used along the direction vertical with the substrate (11) within the scope of second rectangular window The blue light emitting component is persistently etched, until being etched at the upper surface of the substrate (11) to form the second groove；Then, Remove the 3rd SiO₂Layer；

In the first p-type GaN layer (106) upper surface, the upper surface of the substrate (11) and the side of second groove The 4th SiO that wall precipitates with a thickness of 20~100 nanometers₂Layer；

The upper surface of the first p-type GaN layer (106) upper surface and the substrate (11) is etched using dry etch process The 4th SiO₂Layer is to form the 2nd SiO in the side wall of second groove₂Dividing wall (22), the 2nd SiO2 dividing wall (22) for the red light-emitting component and the green luminescence component to be isolated.Specifically, Fig. 8 is referred to, Fig. 8 is that this is practical new Type offer is the 2nd SiO provided by the utility model₂The position view of dividing wall.

Further, on the basis of the above embodiment, Fig. 9 is referred to, Fig. 9 is provided by the utility model described The flow diagram that green luminescence component is prepared in green light wick slot prepares green luminescence component tool in the green light wick slot Body can be with are as follows:

The 3rd GaN buffer layer (201) with a thickness of 3000~5000 nanometers is prepared in the green light wick slot；

The 2nd GaN stabilized zone with a thickness of 500~1500 nanometers is prepared on the 3rd GaN buffer layer (201) (202)；

Being prepared on the 2nd GaN stabilized zone (202) with a thickness of 200~1000 nanometers, doping concentration is 1 × 10¹⁸~5 ×10¹⁹cm^-3The second n-type GaN layer (203)；

The 2nd InGaN/GaN multiple quantum well active layer (204) is prepared on second n-type GaN layer (203)；

The second barrier layer p-type AlGaN (205) is prepared on the 2nd InGaN/GaN multiple quantum well active layer (204)； The barrier layer second p-type AlGaN (205) includes multiple GaN barrier layers (204a) and multiple InGaN quantum well layers (204b), Wherein, the GaN barrier layer (204a) and the InGaN quantum well layer (204b) are arranged alternately, also, each InGaN For quantum well layer (204b) with a thickness of 1.5~3.5 nanometers, the content of In is 30~40%；Each GaN barrier layer (204a) is thick Degree is 5~10 nanometers；

The second p-type GaN layer with a thickness of 100~300 nanometers is prepared on the barrier layer the second p-type AlGaN (205) (206), to complete the preparation of green luminescence component.

Further, on the basis of the above embodiment, the blue light emitting component, the red light-emitting component are etched And the green luminescence component is specifically as follows with forming white-light emitting component:

Blue light emitting component described in selective etch, the red light-emitting component and the green luminescence component are white to be formed Optical isolation wall, wherein

The blue light emitting component is divided into the first blue light emitting component and the second blue light emitting by the white light dividing wall The red light-emitting component is divided into the first red light-emitting component and the second red light-emitting component, the green light is sent out by component Optical assembly is divided into the first green luminescence component and the second green luminescence component, wherein

The first blue light emitting component, the first red light-emitting component and the first green luminescence components distribution exist First side of the white light dividing wall, the second blue light emitting component, the second red light-emitting component and described second green Light luminescence component is distributed in second side of the white light dividing wall, wherein

The second blue light emitting component, the second red light-emitting component and the second green luminescence component cooperation make To form the white-light emitting component.

Specifically, 0, Figure 10 is provided by the utility model by etching blue light emitting component, red light-emitting referring to Figure 1 Component and green luminescence component and the white-light emitting component structure diagram formed, 1A, 2A and 3A respectively represent described in figure One blue light emitting component, the first red light-emitting component and the first green luminescence component, 1B, 2B and 3B generation respectively in figure Second blue light emitting component, the second red light-emitting component described in table and the second green luminescence component.

Further, on the basis of the above embodiment, the blue light emitting component, the red light-emitting component, Public positive electrode is prepared on the green luminescence component and the white-light emitting component, is specifically as follows:

In the first blue light emitting component, the first red light-emitting component, the first green luminescence component, described Second blue light emitting component, the second red light-emitting component and the second green luminescence component upper surface prepare the first metal Contact layer；

Reflective metal layer is prepared on first metal contact layer；

Conductive substrate layer is chosen, prepares the second metal contact layer in the conductive substrates layer surface；

Contact second metal contact layer and the reflective metal layer in the conductive substrates Layer the reflective metal layer between formed bonding effect, with realize the blue light emitting component, the red light-emitting component, Public positive electrode is prepared on the green luminescence component and the white-light emitting component.Specifically, in one embodiment, institute Stating the first metal contact layer can serve as the public positive electrode.

Further, on the basis of the above embodiment, the blue light emitting component, the red light-emitting component, Blue light negative electrode, feux rouges negative electrode, green light negative electrode and white are prepared on the green luminescence component and the white-light emitting component Light negative electrode, is specifically as follows:

The substrate (11) is removed using laser with exposure the first blue light emitting component, first red light-emitting Component, the first green luminescence component, the second blue light emitting component, the second red light-emitting component and described second Green luminescence component lower surface；

Respectively the first blue light emitting component, the first red light-emitting component, the first green luminescence component, The second blue light emitting component, the second red light-emitting component and the second green luminescence component lower surface deposition of electrode Metal；

Electrode metal described in selective etch is respectively in the first blue light emitting component, the first red light-emitting group Part, the first green luminescence component, the second blue light emitting component, the second red light-emitting component and described second green Light luminescence component lower surface is to form the first blue light emitting component negative electrode, the first red light-emitting component negative electrode, the first green light Luminescence component negative electrode, the second blue light emitting component negative electrode, the second red light-emitting component negative electrode and the second green luminescence group Part negative electrode.

Specifically, by public positive electrode and each negative electrode, it can be achieved that under extraneous driving voltage first blue light It is luminescence component, the first red light-emitting component, the first green luminescence component, the second blue light emitting component, described Second red light-emitting component and the second green luminescence component independently shine, the second blue light emitting component, described second Red light-emitting component and the second green luminescence component, which are used cooperatively, can form white light, and then realize RGBW on a single chip Four color overall-in-one control schemas.

The utility model also provides a kind of LED chip, the method that the chip uses any of the above embodiment to refer to It is prepared.In one embodiment, 1, Figure 11 is that a kind of LED chip structure provided by the utility model is shown referring to Figure 1 It is intended to, which is prepared using any of the above embodiment, for example, in Figure 11, the first blue light emitting component includes 1011 layers, 1021 layers, 1031 layers, 1041 layers, 1051 layers and 1061 layers, the second blue light emitting component include 1012 layers, 1022 layers, 1032 layers, 1042,1052 layers and 1062 layers；First red light-emitting component include 4011 layers, 4021 layers, 4031 layers, 4041 layers, 4051 layers and 4061 layers, the second red light-emitting component includes 4012 layers, 4022 layers, 4032 layers, 4042,4052 layers and 4062 layers； First green luminescence component includes 2011 layers, 2021 layers, 2031 layers, 2041 layers, 2051 layers and 2061 layers, the second green luminescence group Part includes 2012 layers, 2022 layers, 2032 layers, 2042,2052 layers and 2062 layers；Second blue light emitting component, the second red light-emitting Component and the second green luminescence component are isolated by white light dividing wall, for synthesizing white light.The material and preparation method of specific each layer Reference can be made to material and method that any of the above embodiment refers to, for example, 1011 layers and 1012 layers of material and preparation process can join See the material and preparation process of the first GaN buffer layer (101), the material of remaining each layer and preparation process those skilled in the art are very Be easy and so on, this will not be repeated here.

The utility model also provides a kind of LED light, and the LED light source of the LED chip of the LED light is real using any of the above The method that the mode of applying refers to is prepared.

Compared with prior art, the LED chip of RGBW tetra- color light source provided by the utility model based on GaN material and its Preparation method has the advantages that

1. can generate the light of multiple color in single-chip, the dosage of fluorescent powder is less；

2. integrated level improves, LED cost can decline；

3. color temperature adjustment is more flexible.

To sum up, specific case used herein is expounded the principles of the present invention and embodiment, above The explanation of embodiment is merely used to help understand the method and its core concept of the utility model；Meanwhile for the one of this field As technical staff, based on the idea of the present invention, there will be changes in the specific implementation manner and application range, comprehensive On, the content of the present specification should not be construed as a limitation of the present invention, and the protection scope of the utility model should be with appended power Subject to benefit requires.

Claims

1. a kind of RGBW light emitting diode (LED) chip with vertical structure based on GaN material characterized by comprising

First blue light emitting component, the first red light-emitting component, the first green luminescence component, white-light emitting component, public positive electricity Pole component, the first blue light emitting component negative electrode, the first red light-emitting component negative electrode, the first green luminescence component negative electrode and White-light emitting component cathode, wherein

The public positive electrode component is set to the first blue light emitting component, the first red light-emitting component, described On one green luminescence component and the white-light emitting component, the first blue light emitting component negative electrode, first feux rouges hair Optical assembly negative electrode, the first green luminescence component negative electrode are respectively arranged at the first blue light emitting component, described On one red light-emitting component and the first green luminescence component, the white-light emitting component cathode is set to the white-light emitting In group；

Further include: the first SiO₂Dividing wall is set to and is isolated between the blue light emitting component and the red light-emitting component；The Two SiO₂Dividing wall is set to and is isolated between the red light-emitting component and the green luminescence component；White light dividing wall, setting Between the isolation green luminescence component and the white-light emitting component；

The white-light emitting component includes the second blue light emitting component, the second red light-emitting component, the second green luminescence component；

The public positive electrode component includes: the first metal contact layer, is set to the first blue light emitting component, described first Red light-emitting component, the first green luminescence component, the second blue light emitting component, the second red light-emitting component and The second green luminescence component upper surface；

Reflective metal layer is set on first metal contact layer；

Second metal contact layer is set on the reflective metal layer；

Conductive substrate layer is set on second metal contact layer.

2. a kind of LED light, including LED support, which is characterized in that further include LED chip as described in claim 1, the LED Chip is loaded on the LED support.