CN108133945A - Polychrome transverse-structured LED chip and LED light based on GaN material - Google Patents

Polychrome transverse-structured LED chip and LED light based on GaN material Download PDF

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Publication number
CN108133945A
CN108133945A CN201711415121.2A CN201711415121A CN108133945A CN 108133945 A CN108133945 A CN 108133945A CN 201711415121 A CN201711415121 A CN 201711415121A CN 108133945 A CN108133945 A CN 108133945A
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green
red
light
positive electrode
photonic
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左瑜
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Xian Zhisheng Ruixin Semiconductor Technology Co Ltd
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Xian Zhisheng Ruixin Semiconductor Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body

Abstract

The present invention provides a kind of polychrome transverse-structured LED chip based on GaN material, including：Substrate (11)；Blue light material, red light material, green light material may be contained on the substrate (11)；Blue light positive electrode and blue light negative electrode, may be contained on the blue light material；Feux rouges positive electrode and feux rouges negative electrode, may be contained on the red light material；Green light positive electrode and green light negative electrode, may be contained on the green light material.Beneficial effects of the present invention have：1. can generate the light of multiple color in single-chip, the dosage of fluorescent powder is less；2. integrated level improves, LED costs can decline；3. colour temperature adjusts more flexible.

Description

Polychrome transverse-structured LED chip and LED light based on GaN material
Technical field
The present invention relates to technical field of semiconductors more particularly to a kind of polychrome transverse-structured LED chips based on GaN material And LED light.
Background technology
LED light source is become increasingly popular to apply in lighting area.Usual LED light source is coordinated by LED luminescence chips Fluorescent powder sends out the light of a variety of colors.In the prior art, individual luminescence chip can only send out monochromatic light, if other need to be synthesized The light of color just needs to mix the luminescence chip of different colours, and fills a large amount of fluorescent powder, and thus existing can By property it is poor, encapsulation difficulty is big the problem of.In addition, light, which is incident in fluorescent powder glue-line, will appear strong scattering phenomenon so that Fluorescent powder glue-line causes a large amount of light to be reflected, i.e., can significantly subtract transmitted through the light of phosphor powder layer to the absorption of light It is few.Therefore, how to design a kind of novel LED chip just becomes of crucial importance.
Invention content
Therefore, it is to solve technological deficiency of the existing technology and deficiency, the present invention proposes a kind of based on GaN material Polychrome transverse-structured LED chip, including：
Substrate (11)；
Blue light material, red light material, green light material may be contained on the substrate (11)；
Blue light positive electrode and blue light negative electrode, may be contained on the blue light material；
Feux rouges positive electrode and feux rouges negative electrode, may be contained on the red light material；
Green light positive electrode and green light negative electrode, may be contained on the green light material.
In one embodiment of the invention, which further includes：
First SiO2Dividing wall (12), is set between the blue light material and the red light material, described for being isolated Blue light material and the red light material；
2nd SiO2Dividing wall (22), is set between the red light material and the green light material, described for being isolated Red light material and the green light material.
In one embodiment of the invention, which further includes the 3rd SiO2Dividing wall (42), for by the indigo plant Luminescent material is separated into the first blue photons material and the second blue photons material, the red light material is separated into the first red photonic material The first green photonic material and the second green photonic material are separated into the second red photonic material and by the green light material, wherein,
The first blue photons material, the first red photonic material and the first green photonic material are distributed in the third SiO2The side of dividing wall (42), the second blue photons material, the second red photonic material and the second green photonic material point Cloth is in the 3rd SiO2The opposite side of dividing wall (42).
In one embodiment of the invention, the blue light positive electrode of the chip includes the first blue photons material positive electricity Pole and the second blue photons material positive electrode, the blue light negative electrode include the first blue photons material negative electrode and the second blue photons material Expect negative electrode, may be contained within the specific location of the first blue photons material or the second blue photons material；
The feux rouges positive electrode includes the first red photonic material positive electrode and the second red photonic material positive electrode, the feux rouges Negative electrode includes the first red photonic material negative electrode and the second red photonic material negative electrode, may be contained within the sub- material of the first feux rouges The specific location of material or the second red photonic material；
The green light positive electrode includes the first green photonic material positive electrode and the second green photonic material positive electrode, the green light Negative electrode includes the first green photonic material negative electrode and the second green photonic material negative electrode, may be contained within the sub- material of the first green light The specific location of material or the second green photonic material.
In one embodiment of the invention, the blue light material of the chip includes the first GaN buffer layers successively (101), the first GaN stabilized zones (102), the first n-type GaN layer (103), the first InGaN/GaN multiple quantum well active layers (104), First p-type AlGaN barrier layers (105) and the first p-type GaN layer (106), correspondingly, the first blue photons material positive electrode and Second blue photons material positive electrode is arranged on first p-type GaN layer (106), the first blue photons material negative electrode and Two blue photons material negative electrodes are arranged on the first GaN stabilized zones (102).
In one embodiment of the invention, the red light material of the chip includes the 2nd GaN buffer layers successively (401), GaAs buffer layers (402), GaAs stabilized zones (403), GalnP/A1GaInP multiple quantum well active layers (404), p-type A1GaInP barrier layers (405) and p-type GaAs contact layers (406), correspondingly, the first red photonic material positive electrode and second Red photonic material positive electrode is arranged on the p-type GaAs contact layers (406), the first red photonic material negative electrode and second red Photonic material negative electrode is arranged on the GaAs buffer layers (402).
In one embodiment of the invention, the green light material of the chip includes the 3rd GaN buffer layers successively (201), the 2nd GaN stabilized zones (202), the second n-type GaN layer (203), the 2nd InGaN/GaN multiple quantum well active layers (204), Second p-type AlGaN barrier layers (205) and the second p-type GaN layer (206), correspondingly, the first green photonic material positive electrode and Second green photonic material positive electrode is arranged on second p-type GaN layer (206), the first green photonic material negative electrode and Two green photonic material negative electrodes are arranged on the 2nd GaN stabilized zones (202).
In one embodiment of the invention, the material of the substrate (11) of the chip is sapphire.
In one embodiment of the invention, which further includes passivation layer, is set to the blue light material, described red The surface of luminescent material and the green light material.
The present invention also provides a kind of LED light, including LED support, further include the LED core described in any of the above embodiment Piece, the LED chip are loaded on the LED support.
Beneficial effects of the present invention have：1. can generate the light of multiple color in single-chip, the dosage of fluorescent powder is less；2. collection It is improved into degree, LED costs can decline；3. colour temperature adjusts more flexible.
Through the following detailed description with reference to the accompanying drawings, other aspects of the invention and feature become apparent.But it should know Road, which is only the purpose design explained, not as the restriction of the scope of the present invention, this is because it should refer to Appended claims.It should also be noted that unless otherwise noted, it is not necessary to which scale attached drawing, they merely attempt to concept Ground illustrates structure and flow described herein.
Description of the drawings
Below in conjunction with attached drawing, the specific embodiment of the present invention is described in detail.
Fig. 1 is a kind of polychrome transverse-structured LED chip structure diagram based on GaN material provided by the invention；
Fig. 2 is another polychrome transverse-structured LED chip structure diagram based on GaN material provided by the invention；
Fig. 3 is another polychrome transverse-structured LED chip structure diagram based on GaN material provided by the invention；
Fig. 4 is the flow diagram for growing blue light material over the substrate；
Fig. 5 is a kind of first InGaN/GaN multiple quantum well active layer structure diagrams provided by the invention；
Fig. 6 is the first SiO provided by the invention2The position view of dividing wall；
Fig. 7 is the flow diagram provided by the invention that red light material is grown in the feux rouges wick slot；
Fig. 8 is a kind of GalnP/A1GaInP multiple quantum well active layers structure diagram provided by the invention；
Fig. 9 be it is provided by the invention be the 2nd SiO provided by the invention2The position view of dividing wall；
Figure 10 is the flow diagram provided by the invention that green light material is grown in the green light wick slot；
Figure 11 is one kind provided by the invention with SiO2The mode of dividing wall is by blue light material, red light material and green light material The schematic diagram being isolated；
Figure 12 is the blue light material structure diagram provided by the invention including electrode.
Specific embodiment
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, below in conjunction with the accompanying drawings to the present invention Specific embodiment be described in detail.
Embodiment one
Fig. 1 is referred to, Fig. 1 shows for a kind of polychrome transverse-structured LED chip structure based on GaN material provided by the invention It is intended to, which includes：
Substrate (11)；
Blue light material, red light material, green light material may be contained on the substrate (11)；
Blue light positive electrode and blue light negative electrode, may be contained on the blue light material；
Feux rouges positive electrode and feux rouges negative electrode, may be contained on the red light material；
Green light positive electrode and green light negative electrode, may be contained on the green light material.
Further, on the basis of the above embodiment, Fig. 2 is referred to, Fig. 2 is based on for another kind provided by the invention The polychrome transverse-structured LED chip structure diagram of GaN material, the chip further include：
First SiO2Dividing wall (12), is set between the blue light material and the red light material, described for being isolated Blue light material and the red light material；
2nd SiO2Dividing wall (22), is set between the red light material and the green light material, described for being isolated Red light material and the green light material.
Further, on the basis of the above embodiment, refer to Fig. 3, Fig. 3 for it is provided by the invention another be based on The polychrome transverse-structured LED chip structure diagram of GaN material, the chip further include the 3rd SiO2Dividing wall (42), for inciting somebody to action The blue light material is separated into the first blue photons material and the second blue photons material, the red light material is separated into the first feux rouges Sub- material and the second red photonic material and the green light material is separated into the first green photonic material and the second green photonic material, Wherein,
The first blue photons material, the first red photonic material and the first green photonic material are distributed in the third SiO2The side of dividing wall (42), the second blue photons material, the second red photonic material and the second green photonic material point Cloth is in the 3rd SiO2The opposite side of dividing wall (42).
Further, on the basis of the above embodiment, the blue light positive electrode includes the first blue photons material positive electricity Pole and the second blue photons material positive electrode, the blue light negative electrode include the first blue photons material negative electrode and the second blue photons material Expect negative electrode, may be contained within the specific location of the first blue photons material or the second blue photons material；
The feux rouges positive electrode includes the first red photonic material positive electrode and the second red photonic material positive electrode, the feux rouges Negative electrode includes the first red photonic material negative electrode and the second red photonic material negative electrode, may be contained within the sub- material of the first feux rouges The specific location of material or the second red photonic material；
The green light positive electrode includes the first green photonic material positive electrode and the second green photonic material positive electrode, the green light Negative electrode includes the first green photonic material negative electrode and the second green photonic material negative electrode, may be contained within the sub- material of the first green light The specific location of material or the second green photonic material.
Further, on the basis of the above embodiment, the blue light material includes the first GaN buffer layers successively (101), the first GaN stabilized zones (102), the first n-type GaN layer (103), the first InGaN/GaN multiple quantum well active layers (104), First p-type AlGaN barrier layers (105) and the first p-type GaN layer (106), correspondingly, the first blue photons material positive electrode and Second blue photons material positive electrode is arranged on first p-type GaN layer (106), the first blue photons material negative electrode and Two blue photons material negative electrodes are arranged on the first GaN stabilized zones (102).
Further, on the basis of the above embodiment, the red light material includes the 2nd GaN buffer layers successively (401), GaAs buffer layers (402), GaAs stabilized zones (403), GalnP/A1GaInP multiple quantum well active layers (404), p-type A1GaInP barrier layers (405) and p-type GaAs contact layers (406), correspondingly, the first red photonic material positive electrode and second Red photonic material positive electrode is arranged on the p-type GaAs contact layers (406), the first red photonic material negative electrode and second red Photonic material negative electrode is arranged on the GaAs buffer layers (402).
Further, on the basis of the above embodiment, the green light material includes the 3rd GaN buffer layers successively (201), the 2nd GaN stabilized zones (202), the second n-type GaN layer (203), the 2nd InGaN/GaN multiple quantum well active layers (204), Second p-type AlGaN barrier layers (205) and the second p-type GaN layer (206), correspondingly, the first green photonic material positive electrode and Second green photonic material positive electrode is arranged on second p-type GaN layer (206), the first green photonic material negative electrode and Two green photonic material negative electrodes are arranged on the 2nd GaN stabilized zones (202).
Second blue photons material provided by the invention, the second red photonic material and the sub- material mating use of the second green light are used for White light is generated, to form the tetra- color light source LED chips of RGBW based on GaN material.
Further, on the basis of the above embodiment, the material of the substrate (11) is sapphire.
Further, on the basis of the above embodiment, which further includes passivation layer, is set to the blue light material The surface of material, the red light material and the green light material.
The present invention also provides a kind of LED light, including LED support, further include the LED core described in any of the above embodiment Piece, the LED chip are loaded on the LED support.
Embodiment two
The preparation method of a kind of polychrome transverse-structured LED chip based on GaN material provided by the invention, in embodiment one LED chip be prepared with the following method, specifically, this method includes：
Sapphire is selected as substrate (11)；
Blue light material is grown on the substrate (11), wherein, the blue light material includes GaN；
Selective etch is carried out to the blue light material to form feux rouges wick slot；
Red light material is grown in the feux rouges wick slot；
Selective etch is carried out to the blue light material to form green light wick slot；
Green light material is grown in the green light wick slot；
The blue light material, the red light material and the green light material are etched to form white light emitting material；
Electrode is prepared on the blue light material, the red light material, the green light material and the white light emitting material respectively, To complete the preparation of the polychrome transverse-structured LED chip based on GaN material.
Further, on the basis of the above embodiment, Fig. 4 is referred to, Fig. 4 is grows blue light material over the substrate The flow diagram of material, specific method can be：
The one GaN buffer layers (101) of growth regulation on the substrate (11)；
The one GaN stabilized zones (102) of growth regulation on the first GaN buffer layers (101)；
One n-type GaN layer of growth regulation (103) on the first GaN stabilized zones (102)；
The one InGaN/GaN multiple quantum well active layers (104) of growth regulation on first n-type GaN layer (103), described One InGaN/GaN multiple quantum well active layers (104) include multiple GaN barrier layers (104a) and multiple InGaN quantum well layers (104b), wherein, the GaN barrier layers (104a) and the InGaN quantum well layers (104b) are arranged alternately, that is, the GaN gesture Barrier layer (104a) and InGaN quantum well layers (104b) are arranged in the period.In one embodiment, the first InGaN/GaN The period of multiple quantum well active layer is 8~30.Also, each InGaN quantum well layers (104b) thickness is received for 1.5~3.5 Rice, the content of In is 10~20%；Each GaN barrier layers (104a) thickness is 5~10 nanometers；Preferably, InGaN quantum The growth temperature of trap (104b) is 650~750 DEG C, and the growth temperature of GaN potential barriers (104a) is 750~850 DEG C；In contents may be used also To be determined according to optical wavelength demand, In contents are higher, and optical wavelength is longer, typically, the first InGaN/GaN Multiple-quantums The period of trap active layer is 20.Specifically, Fig. 5 is referred to, Fig. 5 is a kind of first InGaN/GaN Multiple-quantums provided by the invention Trap active layer structure schematic diagram.
The one p-type AlGaN barrier layers (105) of growth regulation on the first InGaN/GaN multiple quantum well active layers (104)；
One p-type GaN layer of growth regulation (106) on the first p-type AlGaN barrier layers (105), to complete blue light material It prepares.
Further, on the basis of the above embodiment, it is red to be formed that selective etch is carried out to the blue light material Light wick slot, including：
Use pecvd process on first p-type GaN layer (106) deposition thickness for 300~800 nanometers first SiO2Layer；
Using wet-etching technology in the first SiO2Specific location etches at least one first rectangular window on layer； The first rectangular window length or width are all higher than 50 microns and less than 300 microns；
In the range of first rectangular window dry etch process is used along the direction vertical with the substrate (11) The blue light material is persistently etched, until being etched at the upper surface of the substrate (11) to form the first groove；Then, it removes First SiO2Layer；
In the first p-type GaN layer (106) upper surface, the upper surface of the substrate (11) and the side of first groove The 2nd SiO that wall precipitation thickness is 20~100 nanometers2Layer；
First p-type GaN layer (106) upper surface and the upper surface of the substrate (11) are etched using dry etch process The 2nd SiO2Layer is in the first SiO of the side wall of first groove formation2Dividing wall (12), the first SiO2Dividing wall (12) for the blue light material and the red light material to be isolated.Specifically, Fig. 6 is referred to, Fig. 6 is provided by the invention first SiO2The position view of dividing wall.
Further, on the basis of the above embodiment, Fig. 7 is referred to, Fig. 7 is provided by the invention in the feux rouges The flow diagram of red light material is grown in wick slot, growing red light material in the feux rouges wick slot specifically can be according to such as Under type carries out：
Growth thickness is 2000~3000 nanometers of the 2nd GaN buffer layers (401) in the feux rouges wick slot；
Growth thickness is 1000~2000 nanometers on the 2nd GaN buffer layers (401), doping concentration is 1 × 1017~ 1×1018cm-3N-shaped GaAs buffer layers (402)；
Growth thickness is 500~1000 nanometers on the GaAs buffer layers (402), doping concentration is 1 × 1018~5 × 1019cm-3N-shaped GaAs stabilized zones (403)；
GalnP/A1GaInP multiple quantum well active layers (404) are grown on the GaAs stabilized zones (403)；
The GalnP/A1GaInP multiple quantum well active layers (404) include multiple GalnP barrier layers (404a) and multiple A1GaInP barrier layers (404b), wherein, the GalnP barrier layers (404a) and the A1GaInP barrier layers (404b) are alternately arranged Cloth, that is, the multiple GalnP barrier layers (404a) and the multiple A1GaInP barrier layers (404b) in periodic arrangement, and And each A1GaInP barrier layers (404b) thickness is 5~10 nanometers, the content of Al is 10~40%；It is each described GalnP barrier layers (404a) thickness is 5~10 nanometers；Specifically, Fig. 8 is referred to, Fig. 8 is a kind of GalnP/ provided by the invention A1GaInP multiple quantum well active layer structure diagrams.
P-type A1GaInP barrier layers (405) are grown on the GalnP/A1GaInP multiple quantum well active layers (404)；
Growth thickness is 100~500 nanometers on the p-type A1GaInP barrier layers (405), doping concentration is 1 × 1017 ~1 × 1019cm-3P-type GaAs contact layers (406), to complete the preparation of red light material.
Further, on the basis of the above embodiment, it is green to be formed that selective etch is carried out to the blue light material Light wick slot, including：
Use pecvd process on first p-type GaN layer (106) deposition thickness for 300~800 nanometers of third SiO2Layer；
Using wet-etching technology in the 3rd SiO2At least one second rectangular window at specific location erosion on layer； The length or width of second rectangular window are all higher than 50 microns and less than 300 microns；
In the range of second rectangular window dry etch process is used along the direction vertical with the substrate (11) The blue light material is persistently etched, until being etched at the upper surface of the substrate (11) to form the second groove；Then, it removes 3rd SiO2Layer；
In the first p-type GaN layer (106) upper surface, the upper surface of the substrate (11) and the side of second groove The 4th SiO that wall precipitation thickness is 20~100 nanometers2Layer；
First p-type GaN layer (106) upper surface and the upper surface of the substrate (11) are etched using dry etch process The 4th SiO2Layer is in the 2nd SiO of the side wall of second groove formation2Dividing wall (22), the 2nd SiO2 dividing walls (22) for the red light material and the green light material to be isolated.Specifically, refer to Fig. 9, Fig. 9 be it is provided by the invention be this The 2nd SiO provided is provided2The position view of dividing wall.
Further, on the basis of the above embodiment, Figure 10 is referred to, Figure 10 is provided by the invention described green The flow diagram of green light material is grown in light wick slot, green light material is grown in the green light wick slot and is specifically as follows：
Growth thickness is 3000~5000 nanometers of the 3rd GaN buffer layers (201) in the green light wick slot；
Growth thickness is 500~1500 nanometers of the 2nd GaN stabilized zones on the 3rd GaN buffer layers (201) (202)；
Growth thickness is 200~1000 nanometers on the 2nd GaN stabilized zones (202), doping concentration is 1 × 1018~5 ×1019cm-3The second n-type GaN layer (203)；
The two InGaN/GaN multiple quantum well active layers (204) of growth regulation on second n-type GaN layer (203)；
The two p-type AlGaN barrier layers (205) of growth regulation on the 2nd InGaN/GaN multiple quantum well active layers (204)； The second p-type AlGaN barrier layers (205) include multiple GaN barrier layers (204a) and multiple InGaN quantum well layers (204b), Wherein, the GaN barrier layers (204a) and the InGaN quantum well layers (204b) are arranged alternately, also, each InGaN Quantum well layer (204b) thickness is 1.5~3.5 nanometers, and the content of In is 30~40%；Each GaN barrier layers (204a) are thick Spend is 5~10 nanometers；
Growth thickness is 100~300 nanometers of the second p-type GaN layer on the second p-type AlGaN barrier layers (205) (206), to complete the preparation of green light material.
Further, on the basis of the above embodiment, the blue light material, the red light material and described green are etched Luminescent material to form white light emitting material, including：
It is deposited in (106), (12), (406), (22), (206) and (22) upper surface Thickness is 300~800 nanometers of the 5th SiO2Layer；
Using wet-etching technology in the 5th SiO2Specific location etches a third rectangular window on layer；It is described The length of third rectangular window is more than 30 microns, and width is more than 5 microns；
In the range of the third rectangular window dry etch process is used along the direction vertical with the substrate (11) Lasting etching, until being etched at the upper surface of the substrate (11) to form third groove；Then, the 5th SiO is removed2 Layer；
SiO is deposited in the third groove2To form the 3rd SiO2Dividing wall (42), the 3rd SiO2Dividing wall (42) blue light material is separated into the first blue photons material and the second blue photons material, the red light material is separated into The green light material is separated into the first green photonic material and the sub- material of the second green light by one red photonic material and the second red photonic material Material, wherein, the first blue photons material, the first red photonic material and the first green photonic material are distributed in the third SiO2The side of dividing wall (42), the second blue photons material, the second red photonic material and the second green photonic material point Cloth is in the 3rd SiO2The opposite side of dividing wall (42)；The second blue photons material, the second red photonic material and described Two green photonic materials are used to synthesize the white light emitting material.
In the present embodiment, the second blue photons material, the second red photonic material and the second green photonic material It combines for synthesizing the white light emitting material, specifically, the second blue photons material can generate blue light, the sub- material of the second feux rouges Material can generate feux rouges, and the second green photonic material can generate green light, and blue light, feux rouges and green light install certain ratio mixing and be White light can be formed.It in another embodiment, also can be by the first blue photons material, the first red photonic material and described The sub- combination of materials of one green light is used to synthesize the white light emitting material together.That is, the 3rd SiO2Dividing wall (42) one The combination of the blue light material of side, red light material and green light material for producing white light, the blue light material of opposite side, red light material and Green light material is independent to generate blue light, feux rouges and green light respectively.Specifically, Figure 11 is referred to, Figure 11 is one kind provided by the invention With SiO2The schematic diagram that the mode of dividing wall is isolated by blue light material, red light material and green light material.
Further, on the basis of the above embodiment, respectively in the blue light material, red light material, described Electrode is prepared on green light material and the white light emitting material, including：
The first blue light positive electrode and the first blue light negative electrode are prepared on the first blue photons material；
The second blue light positive electrode and the second blue light negative electrode are prepared on the second blue photons material；
The first feux rouges positive electrode and the first feux rouges negative electrode are prepared on the described first red photonic material；
The second feux rouges positive electrode and the second feux rouges negative electrode are prepared on the described second red photonic material；
The first green light positive electrode and the first green light negative electrode are prepared on the described first green photonic material；
The second green light positive electrode and the second green light negative electrode are prepared on the described second green photonic material.
Further, on the basis of the above embodiment, in the blue light material, the red light material, the green light After preparing electrode on material and the white light emitting material, further include：
Reduction processing is carried out to the substrate (11), so that the thickness of the substrate (11) is no more than 150 microns；
In the bottom metallized reflective layer of the substrate (11), the material of the metallic reflector is Al, Ni or Ti.
The present invention also provides a kind of polychrome transverse-structured LED chip based on GaN material, the chip uses any of the above The method that kind embodiment refers to is prepared.
The present invention also provides a kind of method that electrode is prepared on blue light material, in red light material or on green light material It prepares electrode and similar method can be used.Which includes：
Use pecvd process on the blue light material deposition thickness for 300-800 nanometers of the 6th SiO2Layer；It is typical Ground, the 6th SiO2The thickness of layer is 500 nanometers.
Using wet-etching technology, the 6th SiO is etched along the set direction vertical with the substrate (11)2 Layer, first p-type GaN layer (106), the first p-type AlGaN barrier layers (105) and the first InGaN/GaN Multiple-quantums Trap active layer (104), to form the 4th groove in the upper surface of first n-type GaN layer (103)；
Remove the 6th SiO2Layer, in the first p-type GaN layer (106) upper surface and the 4th bottom portion of groove and Deposition thickness is the 7th SiO of 300-800nm2Layer；
7th SiO described in selective etch2Layer is powered on forming first in the first p-type GaN layer (106) upper surface Pole fairlead forms first time electrode lead hole in the first n-type GaN layer (103) upper surface；
In the first top electrode fairlead and first time electrode lead hole bottom deposit Cr/Pt/Au materials；Its In, the thickness of Cr is 20-40nm, and the thickness of Pt is 20-40nm, and the thickness of Au is 800-1500nm；Typically, the thickness of Cr is The thickness of 30nm, Pt are 30nm, and the thickness of Au is 1200nm.
Using annealing process in first p-type GaN layer (106) and first n-type GaN layer (103) and the Cr/ Pt/Au materials interface forms metallic compound；
The Cr/Pt/Au materials are removed, in the metallic compound surface deposition metal and metal described in photoetching to be formed The electrode；
To the surface deposition SiO of the electrode, first p-type GaN layer (106) and first n-type GaN layer (103)2 Passivation layer；SiO described in selective etch2Passivation layer is to expose the electrode.Specifically, Figure 12 is referred to, Figure 12 is the present invention The blue light material structure diagram including electrode provided.In Figure 12 41 for the corresponding electrode of the first top electrode fairlead, 42 For the corresponding electrode of first time electrode lead hole.
Compared with prior art, the polychrome transverse-structured LED chip provided by the invention based on GaN material has with following Beneficial effect：
1. can generate the light of multiple color in single-chip, the dosage of fluorescent powder is less；
2. integrated level improves, LED costs can decline；
3. colour temperature adjusts more flexible.
To sum up, specific case used herein is expounded the principle of the present invention and embodiment, implements above The explanation of example is merely used to help understand the method and its core concept of the present invention；Meanwhile for the general technology people of this field Member, thought according to the present invention, there will be changes in specific embodiments and applications, to sum up, in this specification Appearance should not be construed as limiting the invention, and protection scope of the present invention should be subject to appended claim.

Claims (10)

1. a kind of polychrome transverse-structured LED chip based on GaN material, which is characterized in that including：
Substrate (11)；
Blue light material, red light material, green light material may be contained on the substrate (11)；
Blue light positive electrode and blue light negative electrode, may be contained on the blue light material；
Feux rouges positive electrode and feux rouges negative electrode, may be contained on the red light material；
Green light positive electrode and green light negative electrode, may be contained on the green light material.
2. chip as described in claim 1, which is characterized in that further include：
First SiO2Dividing wall (12), is set between the blue light material and the red light material, for the blue light material to be isolated Material and the red light material；
2nd SiO2Dividing wall (22), is set between the red light material and the green light material, for the feux rouges material to be isolated Material and the green light material.
3. chip as claimed in claim 2, which is characterized in that further include the 3rd SiO2Dividing wall (42), for by the blue light Material separates be separated into the first blue photons material and the second blue photons material, by the red light material the first red photonic material and Second red photonic material and the green light material is separated into the first green photonic material and the second green photonic material, wherein,
The first blue photons material, the first red photonic material and the first green photonic material are distributed in the 3rd SiO2Every Side from wall (42), the second blue photons material, the second red photonic material and the second green photonic material are distributed in institute State the 3rd SiO2The opposite side of dividing wall (42).
4. chip as claimed in claim 3, which is characterized in that
The blue light positive electrode includes the first blue photons material positive electrode and the second blue photons material positive electrode, the blue light negative electricity Pole include the first blue photons material negative electrode and the second blue photons material negative electrode, may be contained within the first blue photons material or The specific location of second blue photons material；
The feux rouges positive electrode includes the first red photonic material positive electrode and the second red photonic material positive electrode, the feux rouges negative electricity Pole include the first red photonic material negative electrode and the second red photonic material negative electrode, may be contained within the described first red photonic material or The specific location of second red photonic material；
The green light positive electrode includes the first green photonic material positive electrode and the second green photonic material positive electrode, the green light negative electricity Pole include the first green photonic material negative electrode and the second green photonic material negative electrode, may be contained within the described first green photonic material or The specific location of second green photonic material.
5. chip as claimed in claim 3, which is characterized in that the blue light material includes the first GaN buffer layers successively (101), the first GaN stabilized zones (102), the first n-type GaN layer (103), the first InGaN/GaN multiple quantum well active layers (104), First p-type AlGaN barrier layers (105) and the first p-type GaN layer (106), correspondingly, the first blue photons material positive electrode and Second blue photons material positive electrode is arranged on first p-type GaN layer (106), the first blue photons material negative electrode and Two blue photons material negative electrodes are arranged on the first GaN stabilized zones (102).
6. chip as claimed in claim 3, which is characterized in that the red light material includes the 2nd GaN buffer layers successively (401), GaAs buffer layers (402), GaAs stabilized zones (403), GalnP/A1GaInP multiple quantum well active layers (404), p-type A1GaInP barrier layers (405) and p-type GaAs contact layers (406), correspondingly, the first red photonic material positive electrode and second Red photonic material positive electrode is arranged on the p-type GaAs contact layers (406), the first red photonic material negative electrode and second red Photonic material negative electrode is arranged on the GaAs buffer layers (402).
7. chip as claimed in claim 3, which is characterized in that the green light material includes the 3rd GaN buffer layers successively (201), the 2nd GaN stabilized zones (202), the second n-type GaN layer (203), the 2nd InGaN/GaN multiple quantum well active layers (204), Second p-type AlGaN barrier layers (205) and the second p-type GaN layer (206), correspondingly, the first green photonic material positive electrode and Second green photonic material positive electrode is arranged on second p-type GaN layer (206), the first green photonic material negative electrode and Two green photonic material negative electrodes are arranged on the 2nd GaN stabilized zones (202).
8. chip as described in claim 1, which is characterized in that the material of the substrate (11) is sapphire.
9. chip as described in claim 1, which is characterized in that further include passivation layer, be set to the blue light material, described red The surface of luminescent material and the green light material.
10. a kind of LED light, including LED support, which is characterized in that further include such as claim 1~9 any one of them LED core Piece, the LED chip are loaded on the LED support.
CN201711415121.2A 2017-12-20 2017-12-20 Polychrome transverse-structured LED chip and LED light based on GaN material Pending CN108133945A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201711415121.2A CN108133945A (en) 2017-12-20 2017-12-20 Polychrome transverse-structured LED chip and LED light based on GaN material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201711415121.2A CN108133945A (en) 2017-12-20 2017-12-20 Polychrome transverse-structured LED chip and LED light based on GaN material

Publications (1)

Publication Number Publication Date
CN108133945A true CN108133945A (en) 2018-06-08

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Country Status (1)

Country Link
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