CN108119781A - Suitable for the raising lamp of farm - Google Patents
Suitable for the raising lamp of farm Download PDFInfo
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- CN108119781A CN108119781A CN201711382299.1A CN201711382299A CN108119781A CN 108119781 A CN108119781 A CN 108119781A CN 201711382299 A CN201711382299 A CN 201711382299A CN 108119781 A CN108119781 A CN 108119781A
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- led lamp
- lamp bead
- raising
- lamp
- led
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- 239000011324 bead Substances 0.000 claims abstract description 40
- 239000000463 material Substances 0.000 claims description 201
- 239000000843 powder Substances 0.000 claims description 6
- 230000003760 hair shine Effects 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 2
- 238000009395 breeding Methods 0.000 abstract description 3
- 230000001488 breeding effect Effects 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 29
- 229910052681 coesite Inorganic materials 0.000 description 28
- 229910052906 cristobalite Inorganic materials 0.000 description 28
- 239000000377 silicon dioxide Substances 0.000 description 28
- 229910052682 stishovite Inorganic materials 0.000 description 28
- 229910052905 tridymite Inorganic materials 0.000 description 28
- 230000004888 barrier function Effects 0.000 description 26
- 238000010586 diagram Methods 0.000 description 23
- 239000000758 substrate Substances 0.000 description 22
- 238000000034 method Methods 0.000 description 16
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 10
- 230000008569 process Effects 0.000 description 9
- 229910002704 AlGaN Inorganic materials 0.000 description 8
- 230000026267 regulation of growth Effects 0.000 description 8
- 230000008021 deposition Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 241000271566 Aves Species 0.000 description 5
- 230000003595 spectral effect Effects 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 239000004744 fabric Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 230000007812 deficiency Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 229910000765 intermetallic Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 244000144977 poultry Species 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 244000283207 Indigofera tinctoria Species 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 230000009471 action Effects 0.000 description 1
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- 230000009286 beneficial effect Effects 0.000 description 1
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- 235000009566 rice Nutrition 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V19/00—Fastening of light sources or lamp holders
- F21V19/001—Fastening of light sources or lamp holders the light sources being semiconductors devices, e.g. LEDs
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V23/00—Arrangement of electric circuit elements in or on lighting devices
- F21V23/003—Arrangement of electric circuit elements in or on lighting devices the elements being electronics drivers or controllers for operating the light source, e.g. for a LED array
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V23/00—Arrangement of electric circuit elements in or on lighting devices
- F21V23/02—Arrangement of electric circuit elements in or on lighting devices the elements being transformers, impedances or power supply units, e.g. a transformer with a rectifier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
Landscapes
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Led Devices (AREA)
Abstract
The present invention provides a kind of raising lamp suitable for farm, including：Shell (01), transparent lamp shade (02), lamp plate (03), protection cavity (04), controller (05), circuit drives chip (06), electric power system (07) and LED lamp bead group (08)；The protection cavity (04) is arranged in the shell (01); the controller (05), the circuit drives chip (06) and the working power (07) are arranged in protection cavity (04), and the LED lamp bead group (08) is mounted on lamp plate (03).Raising lamp provided by the invention suitable for farm can realize the flexible controllable of emission wavelength, be conducive to improve the breeding efficiency of farm, contribute to scientific cultivation.
Description
Technical field
The present invention relates to agricultural tool technical field more particularly to a kind of raising lamps suitable for farm.
Background technology
Illumination has a major impact the growth and development of birds, intensity of illumination, light application time, spectral wavelength, radiation modality pair
Poultry cultivation has a major impact.The difference that various birds require spectral wavelength in the different phase of growth and development, current
Single spectrum LED wavelength raising lamp is difficult the requirement for meeting different birds, different growth and development stages to wavelength, affects raising
Lamp is in the application of farm.
The content of the invention
Therefore, to solve technological deficiency and deficiency existing in the prior art, the present invention proposes a kind of suitable for farm
Raising lamp, which is characterized in that including：
Shell (01), transparent lamp shade (02), lamp plate (03), protection cavity (04), controller (05), circuit drives chip
(06), electric power system (07) and LED lamp bead group (08)；
The protection cavity (04) is arranged in the shell (01), the controller (05), the circuit drives chip
(06) and the working power (07) is arranged in protection cavity (04), and the LED lamp bead group (08) is mounted on lamp plate (03)
On.
In one embodiment of the invention, electric power system (07) includes rectifier, for carrying out rectification to alternating current
To form LED driving voltages.
In one embodiment of the invention, the controller is used for according to preset rules to the driving chip (06)
Control signal is sent, so that the LED lamp bead group (08) shines under the control of said control signal.
In one embodiment of the invention, the LED lamp bead group (08) includes multiple LED lamp beads, also, described every
A LED lamp bead is the adjustable LED lamp bead of emission wavelength.
In one embodiment of the invention, the controller is specifically used for according to preset rules to the driving chip
(06) control signal is sent, the control signal is used to control the emission wavelength of each LED lamp bead.
In one embodiment of the invention, the emission wavelength of each LED lamp bead can be adjusted to blue light wavelength,
Red light wavelength and green wavelength.
In one embodiment of the invention, each LED lamp bead includes a LED chip, the LED chip bag
Include blue light emitting material, red emitting material and green light luminescent material.
In one embodiment of the invention, each LED lamp bead does not contain fluorescent powder.
Raising lamp provided by the invention suitable for farm can realize the flexible controllable of emission wavelength, be conducive to improve
The breeding efficiency of farm contributes to scientific cultivation.
Through the following detailed description with reference to the accompanying drawings, other aspects of the invention and feature become apparent.But it should know
Road, which is only the purpose design explained, not as the restriction of the scope of the present invention, this is because it should refer to
Appended claims.It should also be noted that unless otherwise noted, it is not necessary to which scale attached drawing, they merely attempt to concept
Ground illustrates structure and flow described herein.
Description of the drawings
Below in conjunction with attached drawing, the specific embodiment of the present invention is described in detail.
Fig. 1 is a kind of raising modulated structure schematic diagram suitable for farm provided by the invention；
Fig. 2 is a kind of raising lamp control circuit structure diagram suitable for farm provided by the invention；
Fig. 3 is a kind of polychrome transverse-structured LED chip structure diagram based on GaN material provided by the invention；
Fig. 4 is another polychrome transverse-structured LED chip structure diagram based on GaN material provided by the invention；
Fig. 5 is another polychrome transverse-structured LED chip structure diagram based on GaN material provided by the invention；
Fig. 6 is the flow diagram for growing blue light material over the substrate；
Fig. 7 is a kind of first InGaN/GaN multiple quantum well active layer structure diagrams provided by the invention；
Fig. 8 is the first SiO provided by the invention2The position view of dividing wall；
Fig. 9 is the flow diagram provided by the invention that red light material is grown in the feux rouges wick slot；
Figure 10 is a kind of GalnP/A1GaInP multiple quantum well active layers structure diagram provided by the invention；
Figure 11 be it is provided by the invention be the 2nd SiO provided by the invention2The position view of dividing wall；
Figure 12 is the flow diagram provided by the invention that green light material is grown in the green light wick slot；
Figure 13 is one kind provided by the invention with SiO2The mode of dividing wall is by blue light material, red light material and green light material
The schematic diagram isolated；
Figure 14 is the blue light material structure diagram provided by the invention including electrode.
Specific embodiment
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, below in conjunction with the accompanying drawings to the present invention
Specific embodiment be described in detail.
Embodiment one
Fig. 1 is referred to, Fig. 1 is a kind of raising modulated structure schematic diagram suitable for farm provided by the invention, including：
Shell (01), transparent lamp shade (02), lamp plate (03), protection cavity (04), controller (05), circuit drives chip
(06), electric power system (07) and LED lamp bead group (08)；
The protection cavity (04) is arranged in the shell (01), the controller (05), the circuit drives chip
(06) and the working power (07) is arranged in protection cavity (04), and the LED lamp bead group (08) is mounted on lamp plate (03)
On.
Further, on the basis of the above embodiment, electric power system (07) include rectifier, for alternating current into
Row rectification is to form LED driving voltages.
Further, on the basis of the above embodiment, the controller is used for according to preset rules to the driving
Chip (06) sends control signal, so that the LED lamp bead group (08) shines under the control of said control signal.
Specifically, a memory being electrically connected with the controller can also be included by raising lamp, be stored with preset rules, this
Storage rule is used to indicate specific birds in the spectral wavelength needed for the particular growth stage, so can be achieved with the automatic of raising lamp
Change spectral wavelength to adjust, it is noted that raise the intelligent level of lamp.
Further, on the basis of the above embodiment, the LED lamp bead group (08) includes multiple LED lamp beads, and
And each LED lamp bead is the adjustable LED lamp bead of emission wavelength.
Further, the controller is specifically used for sending control letter to the driving chip (06) according to preset rules
Number, the control signal is used to control the emission wavelength of each LED lamp bead.
Specifically, Fig. 2 is referred to, Fig. 2 is a kind of raising lamp control circuit knot suitable for farm provided by the invention
Structure schematic diagram.
In the present embodiment, each LED lamp bead emission wavelength of itself is adjustable, also, control signal can be to every
A LED lamp bead carries out separately adjustable, for example, control signal sends signal to the 3rd LED light, is allowed to send the at the first moment
The light of one wavelength sends the light of second wave length at the second moment, so can be more flexibly controllable to the adjusting of LED lamp bead group.
Further, on the basis of the above embodiment, the emission wavelength of each LED lamp bead can be adjusted to indigo plant
Optical wavelength, red light wavelength and green wavelength.
Blue light, feux rouges and green light as original Essential colour, by reasonable combination can simulate gamut range greatly, colour temperature changes
The various required spectrum that space is big, wavelength variation range is big, meet the actual demand of poultry cultivation well.
Further, on the basis of the above embodiment, each LED lamp bead includes a LED chip, described
LED chip includes blue light emitting material, red emitting material and green light luminescent material.
Further, each LED lamp bead does not contain fluorescent powder.In present embodiment, LED lamp bead is free of fluorescence
Powder avoids lamp bead rupture fluorescent powder and reveals the threat caused to avian health.
Raising lamp provided by the invention suitable for farm can realize the flexible controllable of emission wavelength, be conducive to improve
The breeding efficiency of farm contributes to scientific cultivation.
Embodiment two
Fig. 3 is referred to, Fig. 3 shows for a kind of polychrome transverse-structured LED chip structure based on GaN material provided by the invention
It is intended to, which includes：
Substrate (11)；
Blue light material, red light material, green light material may be contained on the substrate (11)；
Blue light positive electrode and blue light negative electrode, may be contained on the blue light material；
Feux rouges positive electrode and feux rouges negative electrode, may be contained on the red light material；
Green light positive electrode and green light negative electrode, may be contained on the green light material.
Further, on the basis of the above embodiment, Fig. 4 is referred to, Fig. 4 is based on for another kind provided by the invention
The polychrome transverse-structured LED chip structure diagram of GaN material, the chip further include：
First SiO2Dividing wall (12), is arranged between the blue light material and the red light material, described for isolating
Blue light material and the red light material；
2nd SiO2Dividing wall (22), is arranged between the red light material and the green light material, described for isolating
Red light material and the green light material.
Further, on the basis of the above embodiment, refer to Fig. 5, Fig. 5 for it is provided by the invention another be based on
The polychrome transverse-structured LED chip structure diagram of GaN material, the chip further include the 3rd SiO2Dividing wall (42), for inciting somebody to action
The blue light material is separated into the first blue photons material and the second blue photons material, the red light material is separated into the first feux rouges
Sub- material and the second red photonic material and the green light material is separated into the first green photonic material and the second green photonic material,
Wherein,
The first blue photons material, the first red photonic material and the first green photonic material are distributed in the described 3rd
SiO2The one side of dividing wall (42), the second blue photons material, the second red photonic material and the second green photonic material point
Cloth is in the 3rd SiO2The opposite side of dividing wall (42).
Further, on the basis of the above embodiment, the blue light positive electrode includes the first blue photons material positive electricity
Pole and the second blue photons material positive electrode, the blue light negative electrode include the first blue photons material negative electrode and the second blue photons material
Expect negative electrode, may be contained within the specific location of the first blue photons material or the second blue photons material；
The feux rouges positive electrode includes the first red photonic material positive electrode and the second red photonic material positive electrode, the feux rouges
Negative electrode includes the first red photonic material negative electrode and the second red photonic material negative electrode, may be contained within the sub- material of the first feux rouges
The specific location of material or the second red photonic material；
The green light positive electrode includes the first green photonic material positive electrode and the second green photonic material positive electrode, the green light
Negative electrode includes the first green photonic material negative electrode and the second green photonic material negative electrode, may be contained within the sub- material of the first green light
The specific location of material or the second green photonic material.
Further, on the basis of the above embodiment, the blue light material includes the first GaN buffer layers successively
(101), the first GaN stabilized zones (102), the first n-type GaN layer (103), the first InGaN/GaN multiple quantum well active layers (104),
First p-type AlGaN barrier layers (105) and the first p-type GaN layer (106), correspondingly, the first blue photons material positive electrode and
Second blue photons material positive electrode is arranged on first p-type GaN layer (106), the first blue photons material negative electrode and
Two blue photons material negative electrodes are arranged on the first GaN stabilized zones (102).
Further, on the basis of the above embodiment, the red light material includes the 2nd GaN buffer layers successively
(401), GaAs buffer layers (402), GaAs stabilized zones (403), GalnP/A1GaInP multiple quantum well active layers (404), p-type
A1GaInP barrier layers (405) and p-type GaAs contact layers (406), correspondingly, the first red photonic material positive electrode and second
Red photonic material positive electrode is arranged on the p-type GaAs contact layers (406), the first red photonic material negative electrode and second red
Photonic material negative electrode is arranged on the GaAs buffer layers (402).
Further, on the basis of the above embodiment, the green light material includes the 3rd GaN buffer layers successively
(201), the 2nd GaN stabilized zones (202), the second n-type GaN layer (203), the 2nd InGaN/GaN multiple quantum well active layers (204),
Second p-type AlGaN barrier layers (205) and the second p-type GaN layer (206), correspondingly, the first green photonic material positive electrode and
Second green photonic material positive electrode is arranged on second p-type GaN layer (206), the first green photonic material negative electrode and
Two green photonic material negative electrodes are arranged on the 2nd GaN stabilized zones (202).
Second blue photons material provided by the invention, the second red photonic material and the sub- material mating use of the second green light are used for
White light is generated, to form the tetra- color light source LED chips of RGBW based on GaN material.
Further, on the basis of the above embodiment, the material of the substrate (11) is sapphire.
Further, on the basis of the above embodiment, which further includes passivation layer, is arranged at the blue light material
The surface of material, the red light material and the green light material.
Embodiment three
The preparation method of a kind of polychrome transverse-structured LED chip based on GaN material provided by the invention, in embodiment one
LED chip be prepared with the following method, specifically, this method includes：
Sapphire is selected as substrate (11)；
Blue light material is grown on the substrate (11), wherein, the blue light material includes GaN；
The making choice property of blue light material is etched to form feux rouges wick slot；
Red light material is grown in the feux rouges wick slot；
The making choice property of blue light material is etched to form green light wick slot；
Green light material is grown in the green light wick slot；
The blue light material, the red light material and the green light material are etched to form white light emitting material；
Electrode is prepared on the blue light material, the red light material, the green light material and the white light emitting material respectively,
To complete the preparation of the polychrome transverse-structured LED chip based on GaN material.
Further, on the basis of the above embodiment, Fig. 6 is referred to, Fig. 6 is growth blue light material over the substrate
The flow diagram of material, specific method can be：
The one GaN buffer layers (101) of growth regulation on the substrate (11)；
The one GaN stabilized zones (102) of growth regulation on the first GaN buffer layers (101)；
One n-type GaN layer of growth regulation (103) on the first GaN stabilized zones (102)；
The one InGaN/GaN multiple quantum well active layers (104) of growth regulation on first n-type GaN layer (103), described
One InGaN/GaN multiple quantum well active layers (104) include multiple GaN barrier layers (104a) and multiple InGaN quantum well layers
(104b), wherein, the GaN barrier layers (104a) and the InGaN quantum well layers (104b) are arranged alternately, i.e. the GaN gesture
Barrier layer (104a) and InGaN quantum well layers (104b) are arranged in the cycle.In one embodiment, the first InGaN/GaN
The cycle of multiple quantum well active layer is 8~30.Also, each InGaN quantum well layers (104b) thickness is received for 1.5~3.5
Rice, the content of In is 10~20%；Each GaN barrier layers (104a) thickness is 5~10 nanometers；Preferably, InGaN quantum
The growth temperature of trap (104b) is 650~750 DEG C, and the growth temperature of GaN potential barriers (104a) is 750~850 DEG C；In contents may be used also
To be determined according to optical wavelength demand, In contents are higher, and optical wavelength is longer, typically, the first InGaN/GaN Multiple-quantums
The cycle of trap active layer is 20.Specifically, Fig. 7 is referred to, Fig. 7 is a kind of first InGaN/GaN Multiple-quantums provided by the invention
Trap active layer structure schematic diagram.
The one p-type AlGaN barrier layers (105) of growth regulation on the first InGaN/GaN multiple quantum well active layers (104)；
One p-type GaN layer of growth regulation (106) on the first p-type AlGaN barrier layers (105), to complete blue light material
It prepares.
Further, on the basis of the above embodiment, the making choice property of blue light material is etched red to be formed
Light wick slot, including：
Use pecvd process on first p-type GaN layer (106) deposition thickness for 300~800 nanometers first
SiO2Layer；
Using wet-etching technology in the first SiO2Specific location etches at least one first rectangular window on layer；
The first rectangular window length or width are all higher than 50 microns and less than 300 microns；
In the range of first rectangular window dry etch process is used along the direction vertical with the substrate (11)
The blue light material is persistently etched, until the upper surface for being etched to the substrate (11) sentences to form the first groove；Then, remove
First SiO2Layer；
In the first p-type GaN layer (106) upper surface, the upper surface of the substrate (11) and the side of first groove
The 2nd SiO that wall precipitation thickness is 20~100 nanometers2Layer；
First p-type GaN layer (106) upper surface and the upper surface of the substrate (11) are etched using dry etch process
The 2nd SiO2Layer is in the first SiO of the side wall of first groove formation2Dividing wall (12), the first SiO2Dividing wall
(12) it is used to isolate the blue light material and the red light material.Specifically, Fig. 8 is referred to, Fig. 8 is provided by the invention first
SiO2The position view of dividing wall.
Further, on the basis of the above embodiment, Fig. 9 is referred to, Fig. 9 is provided by the invention in the feux rouges
The flow diagram of red light material is grown in wick slot, growing red light material in the feux rouges wick slot specifically can be according to such as
Under type carries out：
Growth thickness is 2000~3000 nanometers of the 2nd GaN buffer layers (401) in the feux rouges wick slot；
Growth thickness is 1000~2000 nanometers on the 2nd GaN buffer layers (401), doping concentration is 1 × 1017~
1×1018cm-3N-type GaAs buffer layers (402)；
Growth thickness is 500~1000 nanometers on the GaAs buffer layers (402), doping concentration is 1 × 1018~5 ×
1019cm-3N-type GaAs stabilized zones (403)；
GalnP/A1GaInP multiple quantum well active layers (404) are grown on the GaAs stabilized zones (403)；
The GalnP/A1GaInP multiple quantum well active layers (404) include multiple GalnP barrier layers (404a) and multiple
A1GaInP barrier layers (404b), wherein, the GalnP barrier layers (404a) and the A1GaInP barrier layers (404b) are alternately arranged
Cloth, i.e. the multiple GalnP barrier layers (404a) and the multiple A1GaInP barrier layers (404b) in periodic arrangement, and
And each A1GaInP barrier layers (404b) thickness is 5~10 nanometers, the content of Al is 10~40%；It is each described
GalnP barrier layers (404a) thickness is 5~10 nanometers；Specifically, Figure 10 is referred to, Figure 10 is one kind provided by the invention
GalnP/A1GaInP multiple quantum well active layer structure diagrams.
P-type A1GaInP barrier layers (405) are grown on the GalnP/A1GaInP multiple quantum well active layers (404)；
Growth thickness is 100~500 nanometers on the p-type A1GaInP barrier layers (405), doping concentration is 1 × 1017
~1 × 1019cm-3P-type GaAs contact layers (406), to complete the preparation of red light material.
Further, on the basis of the above embodiment, the making choice property of blue light material is etched green to be formed
Light wick slot, including：
Use pecvd process on first p-type GaN layer (106) deposition thickness for 300~800 nanometers the 3rd
SiO2Layer；
Using wet-etching technology in the 3rd SiO2At least one second rectangular window at specific location erosion on layer；
The length or width of second rectangular window are all higher than 50 microns and less than 300 microns；
In the range of second rectangular window dry etch process is used along the direction vertical with the substrate (11)
The blue light material is persistently etched, until the upper surface for being etched to the substrate (11) sentences to form the second groove；Then, remove
3rd SiO2Layer；
In the first p-type GaN layer (106) upper surface, the upper surface of the substrate (11) and the side of second groove
The 4th SiO that wall precipitation thickness is 20~100 nanometers2Layer；
First p-type GaN layer (106) upper surface and the upper surface of the substrate (11) are etched using dry etch process
The 4th SiO2Layer is in the 2nd SiO of the side wall of second groove formation2Dividing wall (22), the 2nd SiO2 dividing walls
(22) it is used to isolate the red light material and the green light material.Specifically, Figure 11 is referred to, Figure 11 is provided by the invention to be
2nd SiO provided by the invention2The position view of dividing wall.
Further, on the basis of the above embodiment, Figure 12 is referred to, Figure 12 is provided by the invention described green
The flow diagram of green light material is grown in light wick slot, green light material is grown in the green light wick slot and is specifically as follows：
Growth thickness is 3000~5000 nanometers of the 3rd GaN buffer layers (201) in the green light wick slot；
Growth thickness is 500~1500 nanometers of the 2nd GaN stabilized zones on the 3rd GaN buffer layers (201)
(202)；
Growth thickness is 200~1000 nanometers on the 2nd GaN stabilized zones (202), doping concentration is 1 × 1018~5
×1019cm-3The second n-type GaN layer (203)；
The two InGaN/GaN multiple quantum well active layers (204) of growth regulation on second n-type GaN layer (203)；
The two p-type AlGaN barrier layers (205) of growth regulation on the 2nd InGaN/GaN multiple quantum well active layers (204)；
The second p-type AlGaN barrier layers (205) include multiple GaN barrier layers (204a) and multiple InGaN quantum well layers (204b),
Wherein, the GaN barrier layers (204a) and the InGaN quantum well layers (204b) are arranged alternately, also, each InGaN
Quantum well layer (204b) thickness is 1.5~3.5 nanometers, and the content of In is 30~40%；Each GaN barrier layers (204a) are thick
It spends for 5~10 nanometers；
Growth thickness is 100~300 nanometers of the second p-type GaN layer on the second p-type AlGaN barrier layers (205)
(206), to complete the preparation of green light material.
Further, on the basis of the above embodiment, the blue light material, the red light material and described green are etched
Luminescent material to form white light emitting material, including：
It is deposited in (106), (12), (406), (22), (206) and (22) upper surface
Thickness is 300~800 nanometers of the 5th SiO2Layer；
Using wet-etching technology in the 5th SiO2Specific location etches the 3rd rectangular window on layer；It is described
The length of 3rd rectangular window is more than 30 microns, and width is more than 5 microns；
In the range of the 3rd rectangular window dry etch process is used along the direction vertical with the substrate (11)
Lasting etching, until the upper surface for being etched to the substrate (11) sentences to form the 3rd groove；Then, the 5th SiO is removed2
Layer；
SiO is deposited in the 3rd groove2To form the 3rd SiO2Dividing wall (42), the 3rd SiO2Dividing wall
(42) blue light material is separated into the first blue photons material and the second blue photons material, the red light material is separated into
The green light material is separated into the first green photonic material and the sub- material of the second green light by one red photonic material and the second red photonic material
Material, wherein, the first blue photons material, the first red photonic material and the first green photonic material are distributed in the described 3rd
SiO2The one side of dividing wall (42), the second blue photons material, the second red photonic material and the second green photonic material point
Cloth is in the 3rd SiO2The opposite side of dividing wall (42)；The second blue photons material, the second red photonic material and described
Two green photonic materials are used to synthesize the white light emitting material.
In the present embodiment, the second blue photons material, the second red photonic material and the second green photonic material
It combines to synthesize the white light emitting material, specifically, the second blue photons material can generate blue light, the sub- material of the second feux rouges
Material can generate feux rouges, and the second green photonic material can generate green light, and blue light, feux rouges and green light install certain ratio mixing and be
White light can be formed.It in another embodiment, also can be by the first blue photons material, the first red photonic material and described
The sub- combination of materials of one green light is used to synthesize the white light emitting material together.That is, the 3rd SiO2Dividing wall (42) one
The combination of the blue light material of side, red light material and green light material for producing white light, the blue light material of opposite side, red light material and
Green light material is independent to generate blue light, feux rouges and green light respectively.Specifically, Figure 13 is referred to, Figure 13 is one kind provided by the invention
With SiO2The schematic diagram that the mode of dividing wall isolates blue light material, red light material and green light material.
Further, on the basis of the above embodiment, respectively in the blue light material, red light material, described
Electrode is prepared on green light material and the white light emitting material, including：
The first blue light positive electrode and the first blue light negative electrode are prepared on the first blue photons material；
The second blue light positive electrode and the second blue light negative electrode are prepared on the second blue photons material；
The first feux rouges positive electrode and the first feux rouges negative electrode are prepared on the described first red photonic material；
The second feux rouges positive electrode and the second feux rouges negative electrode are prepared on the described second red photonic material；
The first green light positive electrode and the first green light negative electrode are prepared on the described first green photonic material；
The second green light positive electrode and the second green light negative electrode are prepared on the described second green photonic material.
Further, on the basis of the above embodiment, in the blue light material, the red light material, the green light
After preparing electrode on material and the white light emitting material, further include：
Reduction processing is carried out to the substrate (11), so that the thickness of the substrate (11) is no more than 150 microns；
In the bottom metallized reflective layer of the substrate (11), the material of the metallic reflector is Al, Ni or Ti.
The present invention also provides a kind of polychrome transverse-structured LED chip based on GaN material, the chip uses any of the above
The method that kind embodiment refers to is prepared.
The present invention also provides a kind of method that electrode is prepared on blue light material, in red light material or on green light material
It prepares electrode and similar method can be used.Which includes：
Use pecvd process on the blue light material deposition thickness for 300-800 nanometers of the 6th SiO2Layer；Typical case
Ground, the 6th SiO2The thickness of layer is 500 nanometers.
Using wet-etching technology, the 6th SiO is etched along the set direction vertical with the substrate (11)2
Layer, first p-type GaN layer (106), the first p-type AlGaN barrier layers (105) and the first InGaN/GaN Multiple-quantums
Trap active layer (104), to form the 4th groove in the upper surface of first n-type GaN layer (103)；
Remove the 6th SiO2Layer, in the first p-type GaN layer (106) upper surface and the 4th bottom portion of groove and
Deposition thickness is the 7th SiO of 300-800nm2Layer；
7th SiO described in selective etch2Layer is powered on forming first in the first p-type GaN layer (106) upper surface
Pole fairlead forms first time electrode lead hole in the first n-type GaN layer (103) upper surface；
In the first top electrode fairlead and first time electrode lead hole bottom deposit Cr/Pt/Au materials；Its
In, the thickness of Cr is 20-40nm, and the thickness of Pt is 20-40nm, and the thickness of Au is 800-1500nm；Typically, the thickness of Cr is
The thickness of 30nm, Pt are 30nm, and the thickness of Au is 1200nm.
Using annealing process in first p-type GaN layer (106) and first n-type GaN layer (103) and the Cr/
Pt/Au materials interface forms metallic compound；
The Cr/Pt/Au materials are removed, in the metallic compound surface deposition metal and metal described in photoetching to be formed
The electrode；
To the surface deposition SiO of the electrode, first p-type GaN layer (106) and first n-type GaN layer (103)2
Passivation layer；SiO described in selective etch2Passivation layer is to expose the electrode.Specifically, Figure 14 is referred to, Figure 14 is the present invention
The blue light material structure diagram including electrode provided.In Figure 14 41 for the corresponding electrode of the first top electrode fairlead, 42
For the corresponding electrode of first time electrode lead hole.
Each self-electrode is respectively equipped on LED chip provided in this embodiment, red light material, blue light material and green light material,
These electrodes can independently be connected with driving voltage end, therefore, it may be convenient to control the LED chip send feux rouges, blue light and
Any one or the combination of several of them in green light, therefore, the spectral wavelength which shines can be controlled flexibly.
Compared with prior art, the polychrome transverse-structured LED chip provided by the invention based on GaN material has with following
Beneficial effect：
1. the light of multiple color can be generated in single-chip, it can not additionally increase fluorescent powder；
2. integrated level improves, LED costs can decline；
3. colour temperature adjusts more flexible.
To sum up, specific case used herein is set forth the principle of the present invention and embodiment, implements above
The explanation of example is only intended to help the method and its core concept for understanding the present invention；Meanwhile for the general technology people of this field
Member, thought according to the invention, there will be changes in specific embodiments and applications, to sum up, in this specification
Appearance should not be construed as limiting the invention, and protection scope of the present invention should be subject to appended claim.
Claims (8)
1. a kind of raising lamp suitable for farm, which is characterized in that including：
Shell (01), transparent lamp shade (02), lamp plate (03), protection cavity (04), controller (05), circuit drives chip (06),
Electric power system (07) and LED lamp bead group (08)；
The protection cavity (04) is arranged in the shell (01), the controller (05), the circuit drives chip (06)
And the working power (07) is arranged in protection cavity (04), the LED lamp bead group (08) is mounted on the lamp plate (03)
On.
2. raising lamp as described in claim 1, which is characterized in that the electric power system (07) includes rectifier, for handing over
Galvanic electricity carries out rectification to form LED driving voltages.
3. raising lamp as claimed in claim 2, which is characterized in that the controller is used for according to preset rules to the driving
Chip (06) sends control signal, so that the LED lamp bead group (08) shines under the control of said control signal.
4. raising lamp as claimed in claim 3, which is characterized in that the LED lamp bead group (08) includes multiple LED lamp beads, and
And each LED lamp bead is the adjustable LED lamp bead of emission wavelength.
5. raising lamp as claimed in claim 4, which is characterized in that the controller is specifically used for according to preset rules to described
Driving chip (06) sends control signal, and the control signal is used to control the emission wavelength of each LED lamp bead.
6. raising lamp as claimed in claim 5, which is characterized in that the emission wavelength of each LED lamp bead can be adjusted to
Blue light wavelength, red light wavelength and green wavelength.
7. raising lamp as claimed in claim 6, which is characterized in that each LED lamp bead includes LED chip, the LED core
Piece includes blue light emitting material, red emitting material and green light luminescent material.
8. raising lamp as claimed in claim 7, which is characterized in that each LED lamp bead does not contain fluorescent powder.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711382299.1A CN108119781A (en) | 2017-12-20 | 2017-12-20 | Suitable for the raising lamp of farm |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711382299.1A CN108119781A (en) | 2017-12-20 | 2017-12-20 | Suitable for the raising lamp of farm |
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| Publication Number | Publication Date |
|---|---|
| CN108119781A true CN108119781A (en) | 2018-06-05 |
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ID=62230459
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711382299.1A Pending CN108119781A (en) | 2017-12-20 | 2017-12-20 | Suitable for the raising lamp of farm |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111710773A (en) * | 2020-06-08 | 2020-09-25 | 杭州汉徽光电科技有限公司 | Light emitting device and illumination device for breeding meat poultry |
-
2017
- 2017-12-20 CN CN201711382299.1A patent/CN108119781A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111710773A (en) * | 2020-06-08 | 2020-09-25 | 杭州汉徽光电科技有限公司 | Light emitting device and illumination device for breeding meat poultry |
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Application publication date: 20180605 |