CN206271744U - Arsenic AlGaInP light emitting diode - Google Patents
Arsenic AlGaInP light emitting diode Download PDFInfo
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- CN206271744U CN206271744U CN201621414656.9U CN201621414656U CN206271744U CN 206271744 U CN206271744 U CN 206271744U CN 201621414656 U CN201621414656 U CN 201621414656U CN 206271744 U CN206271744 U CN 206271744U
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Abstract
A kind of arsenic AlGaInP light emitting diode, is provided with：GaAs (GaAs) substrate, GaAs (GaAs) substrate is provided with superlattices distributed Bragg reflecting layer (DBR), distributed Bragg reflecting layer (DBR) is provided with N-shaped limiting layer, N-shaped limiting layer is provided with the multiple quantum well active layer of the core light-emitting zone for constituting light emitting diode, multiple quantum well active layer is provided with p-type limiting layer, p-type limiting layer is provided with p-type gallium phosphide (GaP) Window layer, wherein, distributed Bragg reflecting layer (DBR) is by aluminium arsenide (AlAs) and multilayer GaAs, aluminium arsenide (GaAs/AlAs)m[the AlAs/ (GaAs/AlAs) of superlattice structure compositionm]nPeriodic structure.A light emitting diode construction is interconnected to constitute by above-mentioned Rotating fields.The utility model is not only greatly reduced the string resistance of distributed Bragg reflecting layer, improves the characteristic of reflectance spectrum；And, the operating voltage of light emitting diode is further improved, light extraction efficiency is increased, improve brightness and the stability of light emitting diode.
Description
Technical field
The utility model is related to light emitting diode, more particularly to a kind of arsenic phosphorus with superlattices distributed Bragg reflector
Change gallium aluminium indium light emitting diode.
Background technology
At present, light emitting diode (lighting emitting diode, LED) is with small volume, long lifespan, response
Speed is fast, high reliability, is widely used in the numerous areas such as display, decoration, communication.Wherein, AlGaInP
(InAlGaP) quaternary series LED, possesses GaAs (GaAs) epitaxial growth substrate of Lattice Matching, and internal quantum efficiency can
Up to more than 90%.
Existing light emitting diode is provided with：GaAs (GaAs) substrate, GaAs (GaAs) substrate is provided with superlattices point
Cloth Bragg reflecting layer (DBR), distributed Bragg reflecting layer (DBR) is provided with N-shaped limiting layer, and N-shaped limiting layer is provided with composition
The multiple quantum well active layer of the core light-emitting zone of light emitting diode, multiple quantum well active layer is provided with p-type limiting layer, p-type limit
Preparative layer is provided with p-type gallium phosphide (GaP) Window layer.Wherein, distributed Bragg reflecting layer (DBR) is used to stop that gallium arsenide substrate is inhaled
The visible ray of the downward propagation that active area sends is received, to improve its external quantum efficiency.But, due to distributed Bragg reflecting layer
(DBR) there is string resistance higher, increased the operating voltage of light emitting diode causes its less reliable.
Utility model content
Main purpose of the present utility model is the disadvantages mentioned above for overcoming prior art to exist, and provides a kind of arsenic aluminum phosphate
Gallium indium light emitting diode, it is by epitaxial growth distributed Bragg reflecting layer, using multilayer GaAs, aluminium arsenide superlattices
Structure, not only significantly reduces string resistance, improves the characteristic of reflectance spectrum；And, further improve the work of light emitting diode
Voltage, increased light extraction efficiency, improve the stability and reliability of light emitting diode.
The purpose of this utility model is realized by following technical scheme：
A kind of arsenic AlGaInP light emitting diode, it is characterised in that：It is provided with：GaAs (GaAs) substrate, GaAs
(GaAs) substrate is provided with superlattices distributed Bragg reflecting layer (DBR), and distributed Bragg reflecting layer (DBR) is provided with N-shaped limit
Preparative layer, N-shaped limiting layer is provided with the multiple quantum well active layer of the core light-emitting zone for constituting light emitting diode, and MQW is active
Layer is provided with p-type limiting layer, and p-type limiting layer is provided with p-type gallium phosphide (GaP) Window layer, wherein, distributed Bragg reflecting layer
(DBR) it is by aluminium arsenide (AlAs) and multilayer GaAs, aluminium arsenide (GaAs/AlAs)m[the AlAs/ of superlattice structure composition
(GaAs/AlAs)m]nPeriodic structure；A light emitting diode construction is interconnected to constitute by above-mentioned Rotating fields.
The top surface of p-type gallium phosphide (GaP) Window layer is provided with p-type electrode, on the bottom surface of GaAs (GaAs) substrate
N-type electrode is provided with, and forms a chip entirety；Chip after cleaved is integrally as the chip needed for light emitting diode (LED).
The distributed Bragg reflecting layer (DBR) is by aluminium arsenide (AlAs) and multilayer GaAs, aluminium arsenide (GaAs/
AlAs)m[the AlAs/ (GaAs/AlAs) of super crystal lattice material compositionm]nPeriodic structure, wherein, n is distributed Bragg reflecting layer
(DBR) periodicity, and n is 2~40；M is number of superlattice cycles, and m is 2~30.
The N-shaped limiting layer is N-shaped AlGaInP [(AlxGa1-x)yIn1-yP] material, wherein, x is for 0.6~1, y
0.4~0.6.
The multi-quantum well active region is AlGaInP, the AlGaInP [(Al of different componentxGa1-x)0.5In0.5P/
(AlyGa1-y)0.5In0.5P] material, wherein, x is that 0~0.5, y is 0~1.
The p-type limiting layer is p-type AlGaInP [(AlxGa1-x)yIn1-yP] material, wherein, x is for 0.6~1, y
0.4~0.6.
The thickness of p-type gallium phosphide (GaP) Window layer is 1-20 microns.
The beneficial effects of the utility model：The utility model significantly reduces string due to using above-mentioned technical proposal, not only
Resistance, improves the characteristic of reflectance spectrum；And, the operating voltage of light emitting diode is further improved, light extraction efficiency is increased,
Improve the stability and reliability of light emitting diode.
Brief description of the drawings
Fig. 1 is the utility model structural section schematic diagram.
Major Symbol explanation in figure：
1.p types electrode, 2.p types gallium phosphide (GaP) Window layer, 4. 3.p types limiting layer, multiple quantum well active layer, 5.n types limit
Preparative layer, 6. distributed Bragg reflecting layer (DBR), 7. GaAs (GaAs) substrate, 8.n type electrodes.
Specific embodiment
As shown in figure 1, the utility model is provided with：GaAs (GaAs) substrate 7, GaAs (GaAs) substrate 7 is provided with super
Lattice distributed Bragg reflecting layer (DBR) 6, distributed Bragg reflecting layer (DBR) 6 is provided with N-shaped limiting layer 5, N-shaped limiting layer 5
The multiple quantum well active layer 4 of the core light-emitting zone for constituting light emitting diode is provided with, multiple quantum well active layer 4 is provided with p-type
Limiting layer 3, p-type limiting layer 3 is provided with p-type gallium phosphide (GaP) Window layer 2, wherein, distributed Bragg reflecting layer (DBR) 6 is served as reasons
Aluminium arsenide (AlAs) and multilayer GaAs, aluminium arsenide (GaAs/AlAs)m[AlAs/ (the GaAs/AlAs of superlattice structure composition
)m]nPeriodic structure；A light emitting diode construction is interconnected to constitute by above-mentioned Rotating fields.
The top surface of above-mentioned p-type gallium phosphide (GaP) Window layer 2 is provided with p-type electrode 1, the bottom surface of GaAs (GaAs) substrate 7
N-type electrode 8 is provided with, and forms a chip entirety；Chip after cleaved is integrally as the core needed for light emitting diode (LED)
Piece.
Above-mentioned distributed Bragg reflecting layer (DBR) 6 is by aluminium arsenide (AlAs) and multilayer GaAs, aluminium arsenide (GaAs/
AlAs)m[the AlAs/ (GaAs/AlAs) of super crystal lattice material compositionm]nPeriodic structure, wherein, n is distributed Bragg reflecting layer
(DBR) 6 periodicity, and n is 2~40；M is number of superlattice cycles, and m is 2~30.
Above-mentioned N-shaped limiting layer 5 is：N-shaped AlGaInP [(AlxGa1-x)yIn1-yP] material, wherein, x is for 0.6~1, y
0.4~0.6.
Above-mentioned multi-quantum well active region 4 is AlGaInP, the AlGaInP [(Al of different componentxGa1-x)0.5In0.5P/(AlyGa1-y)0.5In0.5P] material, wherein, x is that 0~0.5, y is 0~1.
Above-mentioned p-type limiting layer 3 is p-type AlGaInP [(AlxGa1-x)yIn1-yP] material, wherein, x is for 0.6~1, y
0.4~0.6.
The thickness of above-mentioned p-type gallium phosphide (GaP) Window layer 2 is 1-20 microns.
The above, is only preferred embodiment of the present utility model, not makees any formal to the utility model
Limitation, every any simple modification made to above example according to technical spirit of the present utility model, equivalent variations with
Modification, still falls within the range of technical solutions of the utility model.
Claims (7)
1. a kind of arsenic AlGaInP light emitting diode, it is characterised in that：It is provided with：GaAs (GaAs) substrate, GaAs
(GaAs) substrate is provided with superlattices distributed Bragg reflecting layer (DBR), and distributed Bragg reflecting layer (DBR) is provided with N-shaped limit
Preparative layer, N-shaped limiting layer is provided with the multiple quantum well active layer of the core light-emitting zone for constituting light emitting diode, and MQW is active
Layer is provided with p-type limiting layer, and p-type limiting layer is provided with p-type gallium phosphide (GaP) Window layer, wherein, distributed Bragg reflecting layer
(DBR) it is by aluminium arsenide (AlAs) and multilayer GaAs, aluminium arsenide (GaAs/AlAs)m[the AlAs/ of superlattice structure composition
(GaAs/AlAs)m]nPeriodic structure；A light emitting diode construction is interconnected to constitute by above-mentioned Rotating fields.
2. arsenic AlGaInP light emitting diode according to claim 1, it is characterised in that：The p-type gallium phosphide (GaP)
The top surface of Window layer is provided with p-type electrode, and the bottom surface of GaAs (GaAs) substrate is provided with n-type electrode, and it is whole to form a chip
Body；Chip after cleaved is integrally as the chip needed for light emitting diode (LED).
3. arsenic AlGaInP light emitting diode according to claim 1, it is characterised in that：The distributed Blatt reflective
Layer (DBR) is by aluminium arsenide (AlAs) and multilayer GaAs, aluminium arsenide (GaAs/AlAs)m[the AlAs/ of super crystal lattice material composition
(GaAs/AlAs)m]nPeriodic structure, wherein, n is the periodicity of distributed Bragg reflecting layer (DBR), and n is 2~40；M is
Number of superlattice cycles, and m is 2~30.
4. arsenic AlGaInP light emitting diode according to claim 1, it is characterised in that：The N-shaped limiting layer is N-shaped
AlGaInP [(AlxGa1-x)yIn1-yP] material, wherein, x is that 0.6~1, y is 0.4~0.6.
5. arsenic AlGaInP light emitting diode according to claim 1, it is characterised in that：The multi-quantum well active region
AlGaInP, AlGaInP [(Al for different componentxGa1-x)0.5In0.5P/(AlyGa1-y)0.5In0.5P] material, wherein,
X is that 0~0.5, y is 0~1.
6. arsenic AlGaInP light emitting diode according to claim 1, it is characterised in that：The p-type limiting layer is p-type
AlGaInP [(AlxGa1-x)yIn1-yP] material, wherein, x is that 0.6~1, y is 0.4~0.6.
7. arsenic AlGaInP light emitting diode according to claim 1, it is characterised in that：The p-type gallium phosphide (GaP)
The thickness of Window layer is 1-20 microns.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621414656.9U CN206271744U (en) | 2016-12-22 | 2016-12-22 | Arsenic AlGaInP light emitting diode |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621414656.9U CN206271744U (en) | 2016-12-22 | 2016-12-22 | Arsenic AlGaInP light emitting diode |
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| CN206271744U true CN206271744U (en) | 2017-06-20 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108616032A (en) * | 2018-06-25 | 2018-10-02 | 中科芯电半导体科技（北京）有限公司 | A kind of distributed bragg reflector mirror applied in vertical cavity surface emitting laser |
| CN114583026A (en) * | 2022-05-05 | 2022-06-03 | 徐州立羽高科技有限责任公司 | Novel semiconductor deep ultraviolet light source structure |
-
2016
- 2016-12-22 CN CN201621414656.9U patent/CN206271744U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108616032A (en) * | 2018-06-25 | 2018-10-02 | 中科芯电半导体科技（北京）有限公司 | A kind of distributed bragg reflector mirror applied in vertical cavity surface emitting laser |
| CN114583026A (en) * | 2022-05-05 | 2022-06-03 | 徐州立羽高科技有限责任公司 | Novel semiconductor deep ultraviolet light source structure |
| CN114583026B (en) * | 2022-05-05 | 2022-11-29 | 徐州立羽高科技有限责任公司 | Semiconductor deep ultraviolet light source structure |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170620 Termination date: 20181222 |