CN108616032A - A kind of distributed bragg reflector mirror applied in vertical cavity surface emitting laser - Google Patents
A kind of distributed bragg reflector mirror applied in vertical cavity surface emitting laser Download PDFInfo
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- CN108616032A CN108616032A CN201810661371.2A CN201810661371A CN108616032A CN 108616032 A CN108616032 A CN 108616032A CN 201810661371 A CN201810661371 A CN 201810661371A CN 108616032 A CN108616032 A CN 108616032A
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- Prior art keywords
- bragg reflector
- distributed bragg
- aias
- reflector mirror
- binary digit
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
- H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention discloses a kind of distributed bragg reflector mirrors applied in vertical cavity surface emitting laser,Using binary digit alloy GaAs/AIAs super crystal lattice materials as high refractive index material layer,Form a kind of novel binary digit alloy GaAs/AIAs semiconductor superlattice type distributed bragg reflector mirrors DBR,In the DBR speculums of above structure,Since the introducing of binary digit alloy GaAs/AIAs super crystal lattice materials eliminates the component transition layer of heterogeneous interface,Simplify the structure design of device,So that more easy to control to growth parameter(s) in epitaxial process,Simultaneously because the thickness of each layer of superlattices and the Associated of electronics are in the same order of magnitude,The tunnel current that carrier is formed by tunnel-effect is set to enhance to be conducive to the lower series resistance of DBR speculums acquisition.
Description
Technical field
The present invention relates to technical field of semiconductor device, and in particular to a kind of to apply in vertical cavity surface emitting laser
Distributed bragg reflector mirror.
Background technology
The active area thickness of straight cavity surface-emitting laser (VCSEL) only has several nanometers, and gain by one path is very low.Swash to realize
Penetrate must on the active area, lower both sides growth distribution formula Bragg mirror (Distributed Bragg Reflector,
DBR).Typical DBR mirror structures are by the height (Al of such as low Al components to quarter-wave thicknessxGa1-xAs), low
Refractive index (such as AlAs) film tens periods of alternating growth obtain the high reflectance of expected design.In order to ensure that DBR has
Very high reflectivity and wider reflection bandwidth, two kinds of materials for constituting the distribution Bragg reflector basic cycle should have to the greatest extent
Big refringence is measured, but the two kinds of material energy gaps that will also result in saltant type DBR in this way differ greatly so that they
Homotype hetero-junctions has prodigious series resistance, keeps VCSEL device heatings serious, causes lasing difficult.It is previous to reduce DBR series connection
The technology of resistance is all an attempt to ensure under the premise of each period is still the quarter-wave thickness of standard, at two kinds
It is inserted into stepped ramp type or the content gradually variational layer of gradual shape between high and low refractive index material, it is different can so to substantially reduce homotype
Potential barrier between matter knot, to make the series resistance of DBR have the reduction of the order of magnitude, so as to improve the performance of VCSEL.But in molecule
Beam epitaxy (MBE) equipment grows AlxGa1-xDuring As DBR, tens period alternating growth AlxGa1-xAs and content gradually variational layer
When, it needs constantly to change Al source oven temperature degree so that growth course complexity and be difficult to control growth technique very well, especially for only
In the MBE growing systems for having the single sources Al stove, grows this DBR speculums and need the more sources Al stove heating and cooling times, in this way
Structure design be unfavorable to VCSEL industrialization.
In view of this, special propose the present invention.
Invention content
The object of the present invention is to provide a kind of DBR speculums, solve problems of the prior art.
To achieve the goals above, a kind of distributed cloth applied in vertical cavity surface emitting laser provided by the invention
Glug speculum includes the high refractive index material layer and low refractive index material layer of substrate and alternating growth, the high refractive index
Material layer is binary digit alloy GaAs/AIAs super crystal lattice materials.
Further, binary digit alloy GaAs/AIAs superlattice thickness and superlattices quantity are by Al components and 1/4 wavelength
Optics overall thickness determines.
Further, binary digit alloy GaAs/AIAs superlattice thickness isSuperlattices logarithm is 15 pairs.
Further, binary digit alloy GaAs/AIAs superlattice thickness isSuperlattices logarithm is 17 pairs.
Preferably, low-index layer is AlAs materials.
Preferably, distributed bragg reflector mirror is p-type or N-type distributed bragg reflector mirror.
Second aspect, the present invention provides a kind of vertical cavity surface emitting lasers using above-mentioned DBR speculums.
A kind of distributed bragg reflector mirror applied in vertical cavity surface emitting laser provided by the invention, using two
First digital alloy GaAs/AIAs super crystal lattice materials form a kind of novel binary digit alloy as high refractive index material layer
GaAs/AIAs semiconductor superlattice type distributed bragg reflector mirror DBR, in the DBR speculums of above structure, due to binary
The introducing of digital alloy GaAs/AIAs super crystal lattice materials eliminates the component transition layer of heterogeneous interface, simplifies the structure of device
Design so that it is more easy to control to growth parameter(s) in epitaxial process, simultaneously because the moral of the thickness and electronics of each layer of superlattices
Bu Luoyi wavelength keeps the tunnel current enhancing that carrier is formed by tunnel-effect anti-to be conducive to DBR in the same order of magnitude
It penetrates mirror and obtains lower series resistance.
Description of the drawings
Fig. 1 is a kind of distributed bragg reflector mirror knot applied in vertical cavity surface emitting laser provided by the invention
Structure schematic diagram.
In figure：1, substrate 2, high refractive index material layer 3, low refractive index material layer.
Specific implementation mode
In order to enable those skilled in the art to better understand the solution of the present invention, With reference to embodiment and attached drawing
The present invention is described in further detail.
A kind of distributed bragg reflector mirror provided by the invention, the example provided such as Fig. 1 comprising substrate 1, it can
Can also be other suitable transparent or opaque materials to be LED chip or glass.In the present embodiment, substrate 1 is
GaN blue-light LED chips；
The distributed bragg reflector mirror further includes 2 He of high refractive index material layer by several periods of alternating growth
The refraction part that low refractive index material layer 3 forms, each period is the quarter-wave thickness of standard, in the present embodiment
In, low refractive index material layer 3 may be used such as AlAs materials, the use binary digit alloy of high refractive index material layer 2 GaAs/AIAs
Super crystal lattice material is constituted, and forms a kind of novel binary digit alloy GaAs/AIAs semiconductor superlattice type distributed Braggs
Speculum DBR, in the DBR speculums of above structure, since the introducing of binary digit alloy GaAs/AIAs super crystal lattice materials saves
The component transition layer for having removed heterogeneous interface, simplifies the structure design of device so that in epitaxial process more to growth parameter(s)
It is easy to control, simultaneously because the thickness of each layer of superlattices and the Associated of electronics make carrier pass through in the same order of magnitude
The tunnel current that tunnel-effect is formed enhances to be conducive to the lower series resistance of DBR speculums acquisition.
It should be understood that the distribution sequence of high refractive index material layer 2 and low refractive index material layer 3 shown in Fig. 1
With number be for those skilled in the art understand that DBR provided by the present invention structure, 2 He of high refractive index material layer therein
The distribution sequence and number of low refractive index material layer 3 are not construed as limiting the invention.
In the present embodiment, binary digit alloy GaAs/AIAs superlattice thickness and superlattices quantity are by Al components and four
/ mono- wavelength optical overall thickness determines, the implementation example of DBR speculum thickness in two kinds of a cycles is provided below：
Example one, DBR speculum thickness is 850nm in a cycle, is in quarter-wave optics overall thicknessThe low refractive index material layer 3 of AIAs isBinary digit alloy GaAs/AIAs superlattice thickness isSuperlattices logarithm is 15 pairs；
Example two, DBR speculum thickness is 940nm in a cycle, is in quarter-wave optics overall thicknessThe low refractive index material layer 3 of AIAs isBinary digit alloy GaAs/AIAs superlattice thickness isSuperlattices logarithm is 17 pairs.
It can make as the DBR speculums in vertical cavity surface emitting laser, DBR speculums provided by the invention is applied
It is used for p-type therein or N-type DBR speculums.
Second aspect, the present invention provides a kind of vertical cavity surface emitting lasers using above-mentioned DBR speculums.
Specific case used herein elaborates inventive concept, the explanation of above example is only intended to
Help understands core of the invention thought.It should be pointed out that for those skilled in the art, not departing from this
Under the premise of inventive concept, any obvious modification, equivalent replacement or the other improvements made should be included in the present invention
Protection domain within.
Claims (7)
1. a kind of distributed bragg reflector mirror applied in vertical cavity surface emitting laser, including substrate, which is characterized in that
The distributed bragg reflector mirror includes the high refractive index material layer and low refractive index material layer of alternating growth, the high refractive index
Material layer is binary digit alloy GaAs/AIAs super crystal lattice materials.
2. distributed bragg reflector mirror according to claim 1, which is characterized in that the binary digit alloy GaAs/
AIAs superlattice thickness and superlattices quantity are determined by Al components and 1/4 wavelength optical overall thickness.
3. distributed bragg reflector mirror according to claim 2, which is characterized in that the binary digit alloy GaAs/
AIAs superlattice thickness isSuperlattices logarithm is 15 pairs.
4. distributed bragg reflector mirror according to claim 2, which is characterized in that the binary digit alloy GaAs/
AIAs superlattice thickness isSuperlattices logarithm is 17 pairs.
5. distributed bragg reflector mirror according to any one of claims 1 to 4, which is characterized in that the low-index layer
For AlAs materials.
6. distributed bragg reflector mirror according to any one of claims 1 to 4, which is characterized in that the distribution Bradley
Lattice speculum is p-type or N-type distributed bragg reflector mirror.
7. a kind of vertical cavity surface emitting laser, which is characterized in that include the distributed cloth as described in claim 1 to 6 is any
Glug speculum.
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| CN201810661371.2A CN108616032A (en) | 2018-06-25 | 2018-06-25 | A kind of distributed bragg reflector mirror applied in vertical cavity surface emitting laser |
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| CN201810661371.2A CN108616032A (en) | 2018-06-25 | 2018-06-25 | A kind of distributed bragg reflector mirror applied in vertical cavity surface emitting laser |
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Citations (5)
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|---|---|---|---|---|
| CN1112731A (en) * | 1993-11-29 | 1995-11-29 | 德克萨斯仪器股份有限公司 | Epitaxial overgrowth method and devices |
| CN1312583A (en) * | 2001-04-20 | 2001-09-12 | 信息产业部电子第十三研究所 | Preparation of self-organization grown quantum line structure material in molecular beam epitaxy |
| CN1392641A (en) * | 2001-06-14 | 2003-01-22 | 三菱电机株式会社 | Semiconductor laser device |
| CN101180743A (en) * | 2005-05-24 | 2008-05-14 | 罗姆股份有限公司 | Nitride semiconductor light emitting element |
| CN206271744U (en) * | 2016-12-22 | 2017-06-20 | 天津中环新光科技有限公司 | Arsenic AlGaInP light emitting diode |
-
2018
- 2018-06-25 CN CN201810661371.2A patent/CN108616032A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1112731A (en) * | 1993-11-29 | 1995-11-29 | 德克萨斯仪器股份有限公司 | Epitaxial overgrowth method and devices |
| CN1312583A (en) * | 2001-04-20 | 2001-09-12 | 信息产业部电子第十三研究所 | Preparation of self-organization grown quantum line structure material in molecular beam epitaxy |
| CN1392641A (en) * | 2001-06-14 | 2003-01-22 | 三菱电机株式会社 | Semiconductor laser device |
| CN101180743A (en) * | 2005-05-24 | 2008-05-14 | 罗姆股份有限公司 | Nitride semiconductor light emitting element |
| CN206271744U (en) * | 2016-12-22 | 2017-06-20 | 天津中环新光科技有限公司 | Arsenic AlGaInP light emitting diode |
Non-Patent Citations (3)
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|---|
| 傅竹西: "《固体光电子学》", 31 January 1999 * |
| 约翰•奥顿: "《半导体的故事》", 31 January 2015 * |
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Application publication date: 20181002 |