JP2001308368A - Optical resonator structure element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To solve the problem that the conventional resonator structure needs to produce many repeated structures for obtaining a back reflecting mirror, which requires high reflectivity, using a new resonator structure, takes a long time to grow, deteriorated in crystal quality for growing the thick film, and has an adverse effect on the characteristics of an optical resonator structure element. SOLUTION: A front reflecting mirror, a semiconductor layer and a back reflecting mirror are stacked in order on a light transmissive substrate to receive or emit light from the side of the substrate and the front reflecting mirror is formed of a material to lattice-match the substrate, while the back reflecting mirror is firmed of a material which does not lattice-match the substrate. As the front reflecting mirror, whose reflectivity can be comparatively low, is provided between the substrate and the semiconductor layer, the time to grow a thick film is shortened, a distortion and a defect, generated in a crystal, is suppressed and the characteristics of an optical resonator structure element can be improved. Moreover, as the back reflecting mirror can be constituted using an arbitrary dielectric material, the reflectivity of the back reflecting mirror is enhanced and the quantum efficiency of the element can be raised.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical functional device for absorbing, modulating, or emitting light for optical communication or optical information processing. The present invention relates to an optical resonator structure element having a resonator structure for enhancing.

[0002]

2. Description of the Related Art In recent years, with the ultra-high speed of an optical transmission system used for optical communication or optical information processing, a light receiving element, a light modulation element, and a light emitting element (hereinafter referred to collectively as an optical function) which are basic devices of the optical transmission system. High efficiency and high speed are required. As one of the elemental technologies to meet such demands, there is an optical resonator structure that increases light absorption efficiency and the like by repeating light reflection in an optical function element.

FIG. 5 shows a light receiving element having an optical resonator structure as an example of a light receiving element of Journal of Vacuum Science Technology B (J. Vac. Sci. Technology.
B. Pp. 146-1429, vol. 16,199
FIG. 8 shows a cross-sectional view of a 1.5 μm band avalanche photodiode described in 8).

In FIG. 5, 1 is incident light, 43 is nI
nP semiconductor substrate, 44: AlInAs and AlGaInA
s rear reflecting mirror composed of a distributed reflector having a multi-periodic structure, 52 is an n ⁺ -AlInAs spacer layer, 53 is an AlInAs multiplication layer, and 54 is AlInAs-GaInA.
s gradient transition layer, 55 is a GaInAs light absorption layer, 56 is p
⁺ -AlInAs spacer layer, 48 is ZnSe and Mg
A front reflector composed of a distributed reflector consisting of one cycle of the F _2.

In order to operate the photodiode at a higher speed, it is necessary to reduce the traveling time of carriers generated by light absorption. In the photodiode shown in FIG. 5, the front reflector 48 and the rear reflector 44 constitute an optical resonator structure, thereby increasing the absorption efficiency of the light absorption layer 55 and reducing the thickness of the light absorption layer 55 to achieve high speed. The response is realized.

[0006] In the photodiode shown in FIG.
The light reaches the aInAs light absorbing layer 55, and is partially absorbed by the GaInAs light absorbing layer 55, and is converted into an electron-hole pair, that is, a photocarrier. GaInAs light absorbing layer 55
The light that has not been absorbed by the laser beam proceeds as it is and reaches the rear reflector 44, where it is reflected, passes through the GaInAs light absorption layer 55 again, and a part thereof is absorbed. The remaining light that has not been absorbed reaches the front reflector 48 and is partially reflected. After that, while repeating multiple reflections between the front reflector 48 and the rear reflector 44, the GaInA
The light passes through the s light absorbing layer 55 repeatedly and is absorbed. GaI
The optical carriers generated in the nAs light absorption layer 55 are A
Avalanche multiplication is performed in the high electric field region of the lInAs multiplication layer 53, and the current is extracted as an external current with high gain.

Here, the thickness of the GaInAs light absorption layer 55 is d, the absorption coefficient is α, the reflectance of the front reflector is R ₁ , the reflectance of the rear reflector 44 is R _2, and the light in the resonator is If the resonator length is selected so as to satisfy the resonance condition where the phase change accompanying the propagation of is a multiple of 2π, the quantum efficiency η at which light is absorbed is
It is given by the following equation 1.

(Equation 1)

From equation (1), it can be seen that in order to obtain a large quantum efficiency η, it is necessary to make the reflectance R ₂ of the rear reflector 44 constituting the resonator as high as possible. On the other hand, when the rear reflecting mirror 44 is a distributed reflector having a multi-periodic structure of a high refractive index layer and a low refractive index layer having a thickness of λ / 4, the reflectance R ₂ of the rear reflecting mirror 44 for vertically incident light is , The number of periods is q, the refractive index of the low refractive index layer is n ₁ , the refractive index of the high refractive index layer is n ₂ , and the refractive indices of the layers located on the incident side and the opposite side of the distributed reflector are n ₀ and n ₀ , respectively. If n ₃ is given by the following equation 2.

(Equation 2)

From equation (2), in order to obtain a high reflectivity, a material having a large difference in refractive index is used for the high refractive index layer and the low refractive index layer in the multi-periodic structure, and the number of periods q
It can be understood that it is better to increase.

[0010]

However, in the above-mentioned conventional device structure, the rear reflecting mirror 44 is provided with the substrate 43 and the light absorbing layer 55.
And so on, the rear reflecting mirror 4
4 had to be made of a semiconductor lattice-matched to the substrate 43. Therefore, a semiconductor which can be used for the rear reflector 44 is limited and can not be given a large refractive index difference, in order to increase the reflectance R ₂ is it is necessary to increase the number of periods q.

For example, in the photodiode shown in FIG. 5, the rear reflecting mirror 44 is made of an AlI having a refractive index of 3.2.
It is formed by laminating nAs and GaInAs having a refractive index of 3.7, and the total number of periods is 25. The rear reflector 44 thus formed has a total thickness of 5.6 μm, which is extremely thicker than the GaInAs light absorption layer 55 having a thickness of 0.2 μm and the AlInAs multiplication layer 53 having a thickness of 0.5 μm. Become.

Therefore, in order to obtain the rear reflector 44 having a high reflectivity, it is necessary to stack extremely thick layers, and it takes a long time for epitaxial growth. Further, as a result of laminating the thick layers, distortion and defects are apt to occur in the rear reflecting mirror 44, and the crystal quality of the entire device formed thereon is degraded, thereby adversely affecting the device characteristics.

The present invention has been made in view of the above-mentioned problems, and in an optical functional device having an optical resonator structure (hereinafter, referred to as an optical resonator structure device), the crystal quality of the entire device is favorably maintained. It is an object of the present invention to provide a high-efficiency and high-quality optical resonator structure element by increasing the reflectivity of the rear reflector while increasing the reflectivity.

[0014]

To achieve the above object, an optical resonator structure element according to the present invention comprises a plurality of semiconductor layers including an optical function layer, and a light receiving or emitting side of the semiconductor layer. An optical resonator structure element comprising: a front reflector that partially reflects light; and a rear reflector that is arranged to face the front mirror via the semiconductor layer and reflects most of the light. The front reflector, the semiconductor layer, and the rear reflector are sequentially stacked on a light-transmitting substrate, and light is received or emitted from the substrate side, and the front reflector is attached to the substrate. The rear reflector is made of a material that does not lattice-match with the substrate, while being formed of a material that lattice-matches with the substrate.

According to the present invention, the front reflector which may have a relatively small reflectance is provided between the substrate and the semiconductor layer.
The reflector between the substrate and the semiconductor layer can be constituted by a distributed reflector having a small number of periods. Therefore, the time required for the epitaxial growth can be shortened, and the distortion and defects generated in the crystal can be suppressed to improve the device characteristics.

Further, since the rear reflector which requires a high reflectance is provided outside the substrate and the semiconductor layer, the crystallinity of the semiconductor layer is affected even if a material which does not lattice match with the substrate is used for the rear reflector. Therefore, the rear reflector can be formed by using any dielectric material. Accordingly, the quantum efficiency of the device can be improved by increasing the reflectance of the rear reflector.

The rear reflector is preferably a distributed reflector having a multi-periodic structure of a dielectric film. According to the multi-periodic structure of the dielectric film, a reflective mirror having a high reflectance can be formed by employing a combination of dielectric films having a large difference in refractive index.

Further, the rear reflector may be formed of a metal film. If a metal film is used, the rear reflector can be formed with a simple configuration, and the time required for element formation can be reduced.

The optical functional layer preferably has a light receiving function of converting light into electron-hole pairs.

The optical function layer may have a modulation function for modulating the intensity and phase of the incident light.

Further, the optical function layer may have a light emitting function of converting current into light.

In the present specification, "formed of a material which is lattice-matched to the substrate" means that the material is formed using a material having a lattice mismatch of at least 1% or less at the interface with the substrate. Point.

[0023]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment 1 In the present embodiment, an example will be described in which the resonator structure of the present invention is applied to an optical functional element having a light absorption layer that generates an electron-hole pair by absorbing light. FIG. 1 is a cross-sectional view illustrating an optical functional device according to Embodiment 1 of the present invention. In FIG. 1, 2 is a non-reflective film, 3 is a substrate that transmits incident light, 4 is a front reflector that partially reflects light, 5 and 7 are spacer layers that hardly absorb incident light, and 6 is light absorbing. Layer 8 is a rear reflector that reflects most of the light.

The anti-reflection film 2 is provided so as to eliminate incident loss on the substrate 3, and is made of, for example, SiN _x or the like. Also, spacer layers 5 and 7 in the resonator
Is set so as to satisfy the resonance condition of the resonator, and the position of the light absorption layer 6 is provided so as not to be a node of a standing wave in the resonator.

In the light receiving element shown in FIG. 1, after the incident light 1 from the outside enters from the substrate 3 side, passes through the front reflecting mirror 4 and is partially absorbed by the light absorbing layer 6, The light is reflected by the rear reflecting mirror 8 and passes through the light absorbing layer 6 again. Thereafter, the remaining incident light 1 is absorbed by the light absorbing layer 6 while repeating reflection between the front reflecting mirror 4 and the rear reflecting mirror 8. The reflectance R ₁ of the front reflecting mirror 4 may be smaller than the reflectance R ₂ of the rear reflecting mirror 8. Assuming that the absorption coefficient of the light absorbing layer is α and the thickness is d, R ₁ = R ₂ e ^{−2. When α d} , the absorption efficiency of the incident light 1 becomes highest. For example, if α is 6800 cm ⁻¹ and d is 1 μm, the absorption efficiency is highest when the reflectance R ₁ of the front reflector is about 26% of the reflectance R ₂ of the rear reflector. As described above, the higher the reflectance R ₂ of the rear reflector 8 is, the higher the absorption efficiency is.

The front reflector 4 is composed of a distributed reflector in which low-refractive index layers and high-refractive index layers are alternately stacked, and a substrate 3 and a grid are formed to maintain good crystallinity of an element layer formed thereon. Although it is configured using matching semiconductors, the repetition period may be small since the reflectance R ₁ of the front reflector may be smaller than the reflectance R ₂ of the rear reflector. Therefore, the total thickness of the reflecting mirror existing between the substrate 3 and the element layers 5 to 7 can be made thinner than in the case of the conventional resonator structure, and distortion and defects generated in the element can be suppressed. it can.

Further, since the front reflecting mirror 4 can be formed with a small number of periods, it can be used even if it has a composition having some light absorption. Therefore, it is possible to use a wider variety of materials than when forming the rear reflector. For example, the wavelength of the incident light 1 is 1.5 μm, and
When P is used, InP is used as the low refractive index layer.
Alternatively, GaInA is used as the high refractive index layer using AlInAs.
s, GaInAsP or AlGaInAs can be used, and can be constituted by an arbitrary combination thereof.
Above all, the combination of InP and GaInAs is preferable because it is a combination of a binary material and a ternary material, and is easy to form a film. AlInAs and AlG
The combination of aInAs also facilitates film formation in that Al in the composition is common, and is therefore preferable.

On the other hand, the rear reflecting mirror 8 is provided outside the semiconductor structure, that is, the substrate 3 and the semiconductor element layers 5 to 5.
7, there is no risk of affecting the crystallinity of the semiconductor element layers 5 to 7 even if the semiconductor element layers 5 to 7 are formed using a material that does not lattice match with the substrate 3. For this reason, the rear reflector 8
Can be configured using any combination of dielectric materials having a large difference in refractive index. Therefore, it is easy to set the reflectance R ₂ of the rear reflecting mirror 8 higher than before, and the light absorption efficiency of the element can be improved.

For the rear reflector 8, it is preferable to use a combination of dielectric materials having low absorption in the wavelength region of the light to be used and having a large refractive index difference. The larger the difference in refractive index between the dielectric materials to be combined is, the more advantageous the difference is, preferably 1.0 or more, more preferably 1.5 or more, and further preferably 2.0 or more. For example, in a wavelength range from visible light to near infrared, a combination of ZnSe and MgF ₂ is preferable. The refractive index of ZnSe is 2.46 and M
Since the refractive index of gF ₂ is 1.38 and the difference in the refractive index is large, 1.5 μm
A distributed reflector excellent in reflection characteristics with a reflectance of 90% for band light can be configured. Alternatively, Z
nSe and SiO ₂ , ZnSe and SiN, MgF ₂ and SiO
₂ , a combination of MgF ₂ and SiN or the like may be used.

In the present embodiment, an example is shown in which the rear reflecting mirror 8 is constituted by a distributed reflector, but may be constituted by a metal film such as an Au film instead of the distributed reflector.

Further, in the present embodiment, the optical function element having the light absorbing layer 6 has been described as an example. However, even if the light absorbing layer 6 is replaced with a light modulating layer or a light emitting layer, the same operation and effect as described above are obtained. The effect can be obtained.

Embodiment 2 FIG. In the present embodiment,
An example in which the resonator structure according to the present invention is applied to a light receiving element will be described. FIG. 2 is a sectional view showing an avalanche photodiode for detecting light having a wavelength in the 1.5 μm band. In FIG. 2, reference numeral 2 denotes a non-reflection film, 3 denotes an n-InP semiconductor substrate, 4 denotes a front reflector formed of a distributed reflector having a multi-periodic structure of AlInAs and AlGaInAs, 1
2 is an n ⁺ -InP / AlInAs spacer layer, 13 is an AlInAs multiplication layer, 14 is a p ⁺ -InP electric field relaxation layer,
15 is a GaInAs light absorbing layer, 16 is a p ⁺ -InP spacer layer, 17 is a GaInAs contact layer, and 8 is Zn
This is a rear reflector realized by a distributed reflector having a multi-period structure of Se and MgF ₂ .

In order to make the substrate 3 side the incident side of the light 10 to be detected, the p-electrode 18 and the n-electrode 12 for applying an electric field to the semiconductor element layers 12 to 17 are both above the substrate 3 (element (Forming side). Semiconductor element layer 12
16 are formed separately from the photodetecting section 11 forming the p-electrode 18 and the n-electrode forming section 22 forming the n-electrode.

The photodetecting section 11 has a SiN having an opening for exposing the surface of the uppermost InP spacer.
A film 20 is formed, and a rear reflector 8 is formed at the center of the opening in contact with the InP spacer 16.
Surrounding the GaInAs contact layer 17 and the p-electrode 18
Are formed. An n-electrode 19 is formed on the n-electrode forming portion 22 so as to cover the upper surface and side surfaces thereof, and has an opening for exposing the surface of the n-electrode formed on the upper surface.
The N film 20 is formed continuously from the photodetector 11.
On the upper surfaces of the light detection unit 11 and the n-electrode formation unit 22, p
An AuSn bump electrode is formed in contact with the electrode 18 and the n-electrode 19 so as to have the same height.

The light 1 to be detected enters from the substrate 3 side via the SiN _x anti-reflection film 2, and is repeatedly reflected between the resonator structure constituted by the front reflection mirror 4 and the rear reflection mirror 8 while repeating the reflection. It is effectively absorbed by the light absorbing layer 15. GaI
The electron-hole pairs generated in the nAs light absorption layer 15, that is, photocarriers, are avalanche-multiplied by the AlInAs multiplication layer 13, and are extracted as a photocurrent.

The front reflector 4 has a multi-periodic structure of AlInAs and AlGaInAs lattice-matched to the InP substrate 3. The reflectivity of the front reflector 4 may be smaller than that of the rear reflector 8. The number of periods may be small.
For example, the reflectance R ₁ of the front reflector 4 may be set so as to satisfy the relationship of R ₁ = R ₂ e ^{-2 α d} with respect to the reflectance R ₂ of the rear reflector. reflectivity R ₁ of may be a fraction of the reflectance R ₂ of the rear reflector. Therefore, the front reflector 4
Can reduce the thickness of the epitaxial growth layer
The growth time can be shortened, and the crystal quality can be improved by reducing the distortion and defects in the crystal, and the device characteristics and the yield can be improved.

Further, since the rear reflector 8 is provided outside the substrate 3 and the semiconductor element layers 12 to 17, the rear reflector 8 can be made of an arbitrary dielectric, and the reflectivity can be enhanced by the light absorbing layer 15. The absorption efficiency can be improved. Therefore, the light absorbing layer 15 can be made thinner to achieve high-speed response.

In the present embodiment, the rear reflector 8 is formed on the InP spacer layer 16, but the present invention is not limited to this, and a part of the InP spacer layer 16 is removed. May be formed on the removed portion. In this case, in order to remove the InP layer 16 with good controllability, it is also possible to provide an etching stopper layer made of a thin semiconductor layer, for example, a GaInAs etching stop layer, and use an etching solution that selectively dissolves the InP layer 16. it can.

In the second embodiment, an avalanche photodiode has been described as an example. However, other photodiodes, for example, a PIN photodiode, can be similarly configured by adopting the same configuration as described above. The operation and effect of can be achieved.

Embodiment 3 In the present embodiment,
An example in which the optical resonator structure of the present invention is applied to a light modulation element will be described. FIG.
It is sectional drawing which shows the reflection type optical modulator which modulates light of the wavelength of 9 micrometers band. In FIG. 3, 2 is an anti-reflection film, and 23 is n-
A GaAs semiconductor substrate, 24 is a front reflector formed of a distributed reflector having a multi-period structure of AlAs and AlGaAs, 25 is a multi-quantum well light absorption layer formed by stacking GaAs 10 nm and AlGaAs 10 nm for 24 periods, and 28 is Z
This is a rear reflector formed of a distributed reflector having a multi-period structure of nSe and MgF ₂ .

When a reverse bias voltage is applied to the optical modulator, the absorption spectrum of the multiple quantum well light absorbing layer 25 due to the exciton shifts due to the quantum confined Stark effect, so that a voltage change of -1 V can change the reflectivity by 20% or more. An optical modulator is obtained.

Also in this embodiment, the incident light 1 enters from the substrate 23 side. The front reflecting mirror 24 is made of AlAs and A, which are materials capable of lattice matching with the GaAs substrate.
Although it is constituted by a distributed reflector having a multi-periodic structure of 1GaAs, the reflectance R ₁ of the front reflector may be smaller than the reflectance R ₂ of the rear reflector. For example, R ₁ a reflectivity R ₁ of the front reflector 4 with respect to the reflectivity R ₂ of the rear reflector =
What is necessary is just to set so as to satisfy the relationship of R ₂ e ^{−2 α d} , and the reflectance R ₁ of the front reflector 4 may be a fraction of the reflectance R ₂ of the rear reflector. Therefore, the repetition cycle of the front reflector 24 may be small, for example, about 5 cycles. Therefore, the epitaxial growth time required for forming the distributed reflector can be shortened, and crystal distortion and defects in the device can be suppressed.

Since the rear reflector 28 is formed outside the substrate 23 and the multiple quantum well layer 25, the GaAs
High reflectance can be obtained by using ZnSe and MgF ₂ which do not lattice match with s. Therefore, a high-efficiency optical modulator with little light loss can be configured.

In the third embodiment, the optical modulator utilizing the change in the absorptance due to the voltage application to the multiple quantum well layer has been described. However, the optical bistable element (SEED Self-electro-
By applying the same resonator structure as in the present embodiment to an optic device, the same effect as in the third embodiment can be obtained.

Embodiment 4 In the present embodiment,
An example in which a resonator structure according to the present invention is applied to a light emitting device.
Will be explained. FIG. 4 is a block diagram showing a first embodiment according to the fourth embodiment of the present invention.
Vertical cavity surface that oscillates laser light of 5μm wavelength
Light-emitting laser (VCSEL: vertical-cavity surface-
FIG. 3 is a cross-sectional view showing an emitting laser. In FIG.
2 is an anti-reflection film, 33 is an InP substrate, 34 is AlInAs
And a multi-periodic structure of AlGaInAs having a period of 30
Front reflector composed of a distributed reflector,
InAs spacer layer, 36 is made of AlInAs and GaIn
37, a photoactive layer composed of multiple quantum wells having a period of 9
Is an AlInAs spacer layer, and 38 is ZnSe and MgF
_TwoRear part composed of a distributed reflector consisting of multiple periodic structures
It is a reflector. Provide electrodes at both ends and inject carriers
Eventually, the gain of the active layer 36 confined in the resonator structure
As a result, an optical amplification action occurs, and the laser light 30 oscillates.

The laser light 30 is emitted from the substrate 33 side. The front reflecting mirror 34 is formed by repeating AlInAs and AlGaInAs, which are materials that lattice-match with the InP substrate, for 30 periods. In order to perform laser oscillation, the number of repetition periods of the front reflecting mirror 34 is larger than in the other embodiments. The number of cycles may be small. Therefore, it is possible to shorten the epitaxial growth time required for forming the distributed reflector, suppress the crystal distortion and defects, and improve the device characteristics of the laser light emitting device.

On the other hand, the rear reflecting mirror 38 is
It is composed of ZnSe and MgF _2, which are materials that do not lattice match with. ZnSe and MgF ₂ with large refractive index difference
, The reflectivity of the rear reflector 38 can be improved. Therefore, a surface emitting laser device having high quantum efficiency can be configured.

In this embodiment, the laser has been described. However, the same operation and effect can be obtained by applying the same resonator structure to an LED having no amplifying function (a light emitting diode). .

[0049]

As described above, according to the present invention, light reception or light emission of the element is performed from the substrate side, and the front reflector which may have a relatively small reflectance is provided between the substrate and the semiconductor layer. The reflecting mirror between the substrate and the semiconductor layer can be constituted by a distributed reflector having a small number of periods. Therefore, the time required for the epitaxial growth can be shortened, and the distortion and defects generated in the crystal can be suppressed to improve the device characteristics.

Further, since the rear reflector that requires a high reflectance is provided outside the substrate and the semiconductor layer, the crystallinity of the semiconductor layer is affected even if a material that does not lattice match with the substrate is used for the rear reflector. Therefore, the rear reflector can be formed by using any dielectric material. Accordingly, the quantum efficiency of the device can be improved by increasing the reflectance of the rear reflector.

When the rear reflector is a distributed reflector having a multi-periodic structure of a dielectric film, a reflector having a high reflectivity can be formed, and the quantum efficiency of the device can be further increased.

When the rear reflector is formed of a metal film, a rear reflector having a high reflectance can be easily formed.

Further, by forming the optical functional layer as a layer having a light receiving function of converting light into electron-hole pairs, a light receiving element having high sensitivity and capable of high-speed response can be provided.

Further, by forming the optical function layer as a layer having a modulation function of modulating the intensity and phase of incident light, a modulation element having low voltage and high modulation efficiency can be provided.

Further, when the optical functional layer is a layer having a light emitting function of converting current into light, a light emitting element having high directivity and high monochromaticity can be easily provided.

[Brief description of the drawings]

FIG. 1 is a sectional view showing an optical resonator type device according to Embodiment 1 of the present invention.

FIG. 2 is a sectional view showing a light receiving element according to a second embodiment of the present invention.

FIG. 3 is a sectional view showing a light modulation device according to a third embodiment of the present invention.

FIG. 4 is a sectional view showing a light emitting device according to a fourth embodiment of the present invention.

FIG. 5 is a sectional view showing an optical resonator type device having a conventional resonator structure.

[Explanation of symbols]

REFERENCE SIGNS LIST 1 incident light, 2 antireflection film, 3 substrate, 4 front reflector, 5 and 7 spacer layer, 6 light absorption layer, 8 rear reflector, 13 multiplication layer, 14 electric field relaxation layer, 17 contact layer, 18 p Electrode, 19n electrode, 21 bump electrode.

Claims (6)

[Claims] 1. A plurality of semiconductor layers including an optical function layer, a front reflector on a light receiving or light emitting side of the semiconductor layer, which partially reflects light, and a front mirror via the semiconductor layer. An optical resonator structure element provided with a rear reflecting mirror arranged to face a reflecting mirror and reflecting most of light, wherein the front reflecting mirror, the semiconductor layer, and the semiconductor layer are disposed on a light transmitting substrate. A rear reflector is sequentially stacked, and light is received or emitted from the substrate side. The front reflector is formed of a material lattice-matched with the substrate, while the rear reflector is not lattice-matched with the substrate. An optical resonator structure element formed by: 2. The optical resonator structure element according to claim 1, wherein said rear reflector is a distributed reflector having a multi-periodic structure of a dielectric film. 3. The optical resonator structure element according to claim 1, wherein said rear reflector is made of a metal film. 4. The optical resonator structure device according to claim 1, wherein the optical function layer has a light receiving function of converting light into electron-hole pairs. 5. The optical function layer has a modulation function of modulating the intensity and phase of incident light.
An optical resonator structure element according to claim 1. 6. The optical resonator structure element according to claim 1, wherein the optical function layer has a light emitting function of converting current into light.