CN205231094U - Emitting diode with anti -ageing layer - Google Patents
Emitting diode with anti -ageing layer Download PDFInfo
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- CN205231094U CN205231094U CN201520930868.1U CN201520930868U CN205231094U CN 205231094 U CN205231094 U CN 205231094U CN 201520930868 U CN201520930868 U CN 201520930868U CN 205231094 U CN205231094 U CN 205231094U
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- light
- ageing
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Abstract
The utility model provides an emitting diode with anti -ageing layer, is equipped with: a gaas substrate is equipped with distributed bragg reflector on this gaas substrate, the last anti -ageing layer of n type arsenic aluminum phosphate indium that is equipped with of distributed bragg reflector, and n type arsenic aluminum phosphate indium is equipped with n type limiting layer on the anti -ageing layer, is equipped with the multi -quantum well active area that the light zone territory was sent out to the core that constitutes emitting diode on the n type limiting layer, is equipped with p type limiting layer on the multi -quantum well active area, be equipped with P type block layer on being equipped with P type window layer, P type window layer on the p type limiting layer, through an interconnect constitution emitting diode structure of above -mentioned layer structure. The utility model discloses an insert the one deck and through the anti -ageing layer of the arsenic aluminum phosphate indium of design, not only can reduce the probability that the carrier received this interface department interface scattering between distributed bragg reflector and n type aluminum phosphate indium limiting layer, increased carrier injection efficiency, reduced the negative effect of the quantum well active area on it of growing effectively: and, can also further reduce emitting diode's life -span decay.
Description
Technical field
The utility model relates to a kind of light-emitting diode, particularly relates to a kind of light-emitting diode with anti-ageing layer.
Background technology
Light-emitting diode (English lightingemittingdiode, be called for short LED) present stage large-scale application in the occasion such as various illuminations, display, instruction of human society, mostly be inorganic semiconductor material to form, in the application with the long-life, high reliability, high energy saving, the plurality of advantages such as high conversion efficiency are famous.Therefore, constitute the core devices in solid-state illumination, even to this day, define huge industry already, become the important impetus of promoting national economic development.
The target that the technical development of light-emitting diode (LED) is pursued, one is higher brightness, and two is higher conversion efficiencies.No matter for the ruddiness of GaAs (GaAs) base, gold-tinted and green-yellow light light-emitting diode, or the blue light of gallium nitride (GaN) base, blue light and purple-light LED, and the infrarede emitting diode of Aluminum gallium arsenide (AlGaAs) base, what substantially take is promote method that internal quantum efficiency and external quantum efficiency develop simultaneously to improve its brightness, wherein, the method that the raising of internal quantum efficiency is mainly taked optimizes the growth parameter(s) of active area, adopt the source material that purity is higher, the means such as the restriction of raising quantum well (superlattice) are carried out; The raising of external quantum efficiency is then by the distributed Bragg reflector of epitaxial growth respective wavelength, and chemical polishing makes surface coarsening, and the material that employing refractive index is applicable to more is to complete the means such as bonding technology to realize.
Through development for a long time, under the facilitation of semiconductor lighting industrial technology development, existing GaAs (GaAs) base AlGaInP (InAlGaP) quaternary system lumination of light emitting diode wavelength covers from green-yellow light (570nm) to gold-tinted (590nm) to orange light (605nm) to the wave band of ruddiness (625nm), long wavelength's ruddiness of the 660nm wave band in for agricultural production can be extended outward under ultimate attainment condition, and brightness and uniformity all obtain and significantly improve, and considerably increase the range of application of product.But, for AlGaInP (InAlGaP) quaternary system light-emitting diode, especially gold-tinted and green-yellow light light-emitting diode, due to the higher (gold-tinted more than 10% of the content of the al composition in its luminescent core district in epitaxial process, green-yellow light more than 30%), therefore, in growth course, first the probability of AlGaInP (InAlGaP) quaternary alloy generation alloy order phenomenon can increase greatly, and wavelength is departed from.The means overcoming alloy order phenomenon can by selecting substrate, the Optimal Growing epitaxy technique parameter of suitable crystal face, rationally carrying out the means of adulterating etc. and avoided; Secondly; because of oxygen impurities remaining in aluminium element and growth atmosphere in conjunction with exceptional stability; usually can cause forming deep energy level in Quantum well active district; these deep energy levels serve very disadvantageous effect in luminescence process; in compound charge carrier process; do not there is provided luminous mechanism; and; also can form heat energy outwards to discharge; the temperature in Quantum well active district is improved further, thus causes the life problems of gold-tinted and green-yellow light light-emitting diode (LED) more outstanding than ruddiness.This problem can be suppressed by adopting the technological means such as the higher source material of purity (comprising group V source and MO source and doped source), Optimal Growing technique.
At present, on market, the life tests of light-emitting diode is stricter, it has been generally acknowledged that: decay during room temperature under 168 hours 30 milliamperes of (mA) operating current conditions can not be greater than 10%, this mass market utilization for GaAs based light-emitting diode (LED) especially gold-tinted and green-yellow light light-emitting diode (LED) proposes very difficult challenge.
Utility model content
Main purpose of the present utility model is the above-mentioned shortcoming overcoming prior art existence, and a kind of light-emitting diode with anti-ageing layer is provided, it by inserting the arsenic aluminum phosphate indium (In of one deck through designing between distributed Bragg reflector (DBR) and N-shaped aluminum phosphate indium (InAlP) limiting layer
xal
1-xas
yp
1-y) anti-ageing layer, not only can by between aluminium arsenide (AlAs) layer in distributed Bragg reflector (DBR) and N-shaped aluminum phosphate indium (InAlP) limiting layer because V group element switches (As-P) and III element (In, Al) proportioning changes, and the surface density of the surface state caused effectively reduces, thus, reduce the probability that charge carrier is subject to this interface interface scattering, add Carrier Injection Efficiency, significantly reduce the temperature caused because of lattice scattering and raise negative effect to growth Quantum well active district thereon: and, under can also inscribing before the I-E characteristic not affecting light-emitting diode, the life time decay of further reduction Yellow light emitting diode.
The purpose of this utility model is realized by following technical scheme:
A kind of light-emitting diode with anti-ageing layer, it is characterized in that: be provided with: a GaAs (GaAs) substrate, this GaAs (GaAs) substrate is provided with distributed Bragg reflector (DBR), and distributed Bragg reflector (DBR) is provided with N-shaped arsenic aluminum phosphate indium (In
xal
1-xas
yp
1-y) anti-ageing layer, N-shaped arsenic aluminum phosphate indium (In
xal
1-xas
yp
1-y) anti-ageing layer is provided with N-shaped limiting layer, N-shaped limiting layer is provided with the multi-quantum well active region of the core light-emitting zone forming light-emitting diode, and multi-quantum well active region is provided with p-type limiting layer; P-type limiting layer is provided with P type Window layer, P type Window layer is provided with P type cap, is interconnected to constitute a light emitting diode construction by above-mentioned Rotating fields.
Described above-mentioned distributed Bragg reflector (DBR) is by GaAs (GaAs) material of the high index of refraction replaced and low-refraction aluminum gallium arsenide (Al
xga
1-xas) material alternating growth formed, and wherein, the scope of x is: 0-1.
The anti-ageing layer of described N-shaped is: arsenic aluminum phosphate indium (In
xal
1-xas
yp
1-y) material, wherein, the scope of x is the scope of 0-0.05, y is 0.95-1.
Described N-shaped limiting layer is: aluminum phosphate indium (In
0.5al
0.5or AlGaInP { In P)
0.5(Al
xga
1-x)
0.5p} material, wherein, the scope of x is 0-1.
Described multi-quantum well active region is: the AlGaInP of different component, AlGaInP [In
0.5(Al
xga
1-x)
0.5p/In
0.5(Al
yga
1-y)
0.5p] material.
Described p-type limiting layer is aluminum phosphate indium (InAlP) material.
Described Window layer is P type gallium phosphide (GaP) material.
Described cap is: P p type gallium arensidep (GaAs) material.
The beneficial effects of the utility model: the utility model is owing to adopting technique scheme, and it by inserting the arsenic aluminum phosphate indium (In of one deck through designing between distributed Bragg reflector (DBR) and N-shaped aluminum phosphate indium (InAlP) limiting layer
xal
1-xas
yp
1-y) anti-ageing layer, not only can by between aluminium arsenide (AlAs) layer in distributed Bragg reflector (DBR) and N-shaped aluminum phosphate indium (InAlP) limiting layer because V group element switches (As-P) and III element (In, Al) proportioning changes, and the surface density of the surface state caused effectively reduces, thus, reduce the probability that charge carrier is subject to this interface interface scattering, add Carrier Injection Efficiency, significantly reduce the temperature caused because of lattice scattering and raise negative effect to growth Quantum well active district thereon: and, under can also inscribing before the I-E characteristic not affecting light-emitting diode, the life time decay of further reduction Yellow light emitting diode.
Accompanying drawing explanation
Fig. 1 is the utility model structural representation.
Major label description in figure:
1. GaAs (GaAs) substrate, 2. distributed Bragg reflector (DBR), 3.n type arsenic aluminum phosphate indium (In
xal
1-xas
yp
1-y) anti-ageing layer, 4.n type limiting layer, 5. multi-quantum well active region, 6.p type limiting layer, 7.P type Window layer, 8.P type cap.
Embodiment
As shown in Figure 1, the utility model is provided with: GaAs (GaAs) substrate 1, GaAs (GaAs) substrate 1 is provided with distributed Bragg reflector (DBR) 2, and distributed Bragg reflector (DBR) 2 is provided with N-shaped arsenic aluminum phosphate indium (In
xal
1-xas
yp
1-y) anti-ageing layer 3, N-shaped arsenic aluminum phosphate indium (In
xal
1-xas
yp
1-y) anti-ageing layer 3 is provided with N-shaped limiting layer 4, N-shaped limiting layer 4 is provided with the multi-quantum well active region 5 of the core light-emitting zone forming light-emitting diode, and multi-quantum well active region 5 is provided with p-type limiting layer 6; P-type limiting layer 6 is provided with P type Window layer 7, P type Window layer 7 and is provided with P type cap 8, is interconnected to constitute a light emitting diode construction by above-mentioned Rotating fields.
Above-mentioned distributed Bragg reflector (DBR) 2 is by GaAs (GaAs) material of the high index of refraction replaced and low-refraction aluminum gallium arsenide (Al
xga
1-xas) material alternating growth formed, and wherein, the scope of x is: 0-1; The anti-ageing layer 3 of N-shaped is arsenic aluminum phosphate indium (In
xal
1-xas
yp
1-y) material, wherein, the scope of x is the scope of 0-0.05, y is 0.95-1.
Said n type limiting layer 4 is aluminum phosphate indium (In
0.5al
0.5or AlGaInP { In P)
0.5(Al
xga
1-x)
0.5p} material, wherein, the scope of x is 0-1.
Above-mentioned multi-quantum well active region 5 is: the AlGaInP of different component, AlGaInP [In
0.5(Al
xga
1-x)
0.5p/In
0.5(Al
yga
1-y)
0.5p] material.
Above-mentioned p-type limiting layer 6 is aluminum phosphate indium (InAlP) material.
Above-mentioned Window layer 7 is P type gallium phosphide (GaP) material.
Above-mentioned cap 8 is: P p type gallium arensidep (GaAs) material.
The above, it is only preferred embodiment of the present utility model, not any pro forma restriction is done to the utility model, every above embodiment is done according to technical spirit of the present utility model any simple modification, equivalent variations and modification, all still belong in the scope of technical solutions of the utility model.
Claims (8)
1. one kind has the light-emitting diode of anti-ageing layer, it is characterized in that: be provided with: a GaAs (GaAs) substrate, this GaAs (GaAs) substrate is provided with distributed Bragg reflector (DBR), and distributed Bragg reflector (DBR) is provided with N-shaped arsenic aluminum phosphate indium (In
xal
1-xas
yp
1-y) anti-ageing layer, N-shaped arsenic aluminum phosphate indium (In
xal
1-xas
yp
1-y) anti-ageing layer is provided with N-shaped limiting layer, N-shaped limiting layer is provided with the multi-quantum well active region of the core light-emitting zone forming light-emitting diode, and multi-quantum well active region is provided with p-type limiting layer; P-type limiting layer is provided with P type Window layer, P type Window layer is provided with P type cap, is interconnected to constitute a light emitting diode construction by above-mentioned Rotating fields.
2. the light-emitting diode with anti-ageing layer according to claim 1, is characterized in that: described above-mentioned distributed Bragg reflector (DBR) is by GaAs (GaAs) material of the high index of refraction replaced and low-refraction aluminum gallium arsenide (Al
xga
1-xas) material alternating growth formed, and wherein, the scope of x is: 0-1.
3. the light-emitting diode with anti-ageing layer according to claim 1, is characterized in that: the anti-ageing layer of described N-shaped is: arsenic aluminum phosphate indium (In
xal
1-xas
yp
1-y) material, wherein, the scope of x is the scope of 0-0.05, y is 0.95-1.
4. the light-emitting diode with anti-ageing layer according to claim 1, is characterized in that: described N-shaped limiting layer is: aluminum phosphate indium (In
0.5al
0.5or AlGaInP { In P)
0.5(Al
xga
1-x)
0.5p} material, wherein, the scope of x is 0-1.
5. the light-emitting diode with anti-ageing layer according to claim 1, is characterized in that: described multi-quantum well active region is: the AlGaInP of different component, AlGaInP [In
0.5(Al
xga
1-x)
0.5p/In
0.5(Al
yga
1-y)
0.5p] material.
6. the light-emitting diode with anti-ageing layer according to claim 1, is characterized in that: described p-type limiting layer is aluminum phosphate indium (InAlP) material.
7. the light-emitting diode with anti-ageing layer according to claim 1, is characterized in that: described Window layer is P type gallium phosphide (GaP) material.
8. the light-emitting diode with anti-ageing layer according to claim 1, is characterized in that: described cap is: P p type gallium arensidep (GaAs) material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520930868.1U CN205231094U (en) | 2015-11-20 | 2015-11-20 | Emitting diode with anti -ageing layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520930868.1U CN205231094U (en) | 2015-11-20 | 2015-11-20 | Emitting diode with anti -ageing layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205231094U true CN205231094U (en) | 2016-05-11 |
Family
ID=55906140
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520930868.1U Expired - Fee Related CN205231094U (en) | 2015-11-20 | 2015-11-20 | Emitting diode with anti -ageing layer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205231094U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112909138A (en) * | 2021-01-04 | 2021-06-04 | 华灿光电(苏州）有限公司 | Epitaxial wafer of AlGaInP light-emitting diode and preparation method thereof |
-
2015
- 2015-11-20 CN CN201520930868.1U patent/CN205231094U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112909138A (en) * | 2021-01-04 | 2021-06-04 | 华灿光电(苏州）有限公司 | Epitaxial wafer of AlGaInP light-emitting diode and preparation method thereof |
| CN112909138B (en) * | 2021-01-04 | 2022-05-20 | 华灿光电(苏州）有限公司 | Epitaxial wafer of AlGaInP light-emitting diode and preparation method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160511 Termination date: 20181120 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |