CN208208151U - A kind of optimization integrated form double light path laser ionisation effect simulation system - Google Patents

A kind of optimization integrated form double light path laser ionisation effect simulation system Download PDF

Info

Publication number
CN208208151U
CN208208151U CN201721524323.6U CN201721524323U CN208208151U CN 208208151 U CN208208151 U CN 208208151U CN 201721524323 U CN201721524323 U CN 201721524323U CN 208208151 U CN208208151 U CN 208208151U
Authority
CN
China
Prior art keywords
laser
prism
optical path
light
simulation system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201721524323.6U
Other languages
Chinese (zh)
Inventor
孙鹏
李沫
汤戈
陈飞良
马莉
代刚
张健
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Institute of Electronic Engineering of CAEP
Original Assignee
Institute of Electronic Engineering of CAEP
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Institute of Electronic Engineering of CAEP filed Critical Institute of Electronic Engineering of CAEP
Priority to CN201721524323.6U priority Critical patent/CN208208151U/en
Application granted granted Critical
Publication of CN208208151U publication Critical patent/CN208208151U/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Investigating Or Analysing Materials By Optical Means (AREA)

Abstract

The utility model discloses a kind of optimization integrated form double light path laser ionisation effect simulation system, which mainly includes four double-wavelength pulse laser, double light path attenuation module, microexamination module, test and control module parts.The system is realized at the same time on the basis of 532nm and 1064nm twin wavelength laser output, optical path and structure optimization have been carried out to entire simulation system, more flexible quickly semiconductor devices radiation dose rate effect can be studied and be verified in laboratory conditions, the simulation that semiconductor devices dose rate effect is acted on especially for radiation sources such as gamma rays has the characteristics that convenient, fast, accurate, highly-safe.The utility model effectively reduces experimentation cost, improves test efficiency, shortens the design cycle of radiation hardening.

Description

A kind of optimization integrated form double light path laser ionisation effect simulation system
Technical field
The utility model belongs to semiconductor devices irradiation effects field, and especially a kind of optimization integrated form double light path swashs Photo-ionisation effect analog system.
Background technique
Now in many social application scenes, all there is various radiation factors.When radiation factor and semiconductor When interacting between device, the physical processes such as ionisation effect, displacement effect can be caused, seriously affect device or even whole system Working performance, in some instances it may even be possible to be allowed to permanent failure.Therefore on the research of radiation effect influence and to corresponding radiation hardening Technology is necessary research topic.
In early days, researcher relies primarily on the development radiation of the large-scale grounds devices such as electron linear accelerator, various radioactive sources Effect study.But these large-scale ground radiation simulation devices exist as actinometry is limited in scope, parameter regulation is extremely difficult, changes The time for becoming kinds of radiation and energy demand is long, have damage to measured device, is difficult to accurately to provide device under the radiation accurate Time and spatial information need the limitations such as stringent radiation shield and safeguard measure, it is difficult to it is first in design to meet scientific research personnel Phase, the need that flexibly, fast, safely semiconductor devices radiation effect and working performance are studied and verified in the lab It asks.
Since laser can be generated in semiconductor devices with electrical characteristic similar in certain radiation effects, laser Simulation ionization effect of radiation method is come into being, and has obtained the popularization and approval of external scientific research circle, in semiconductor devices spoke It penetrates in effect sensitivity tests, the batch screening of radiation hardened component and safeguard procedures verifying etc. and confirms its uniqueness Advantage can largely make up the deficiency of ground installation analogy method, have boundless application prospect.
Domestic existing laser simulation system is mostly single particle effect laser simulation system at present, and mostly Single wavelength tries Check system, wavelength switching surfaces are expensive, are not able to satisfy radiation dose rate effect laser analog requirement.
Utility model content
It there is no status and the other ground simulators for dose rate effect laser simulation system for the current country Inherent limitations, the utility model provides a kind of optimization integrated form double light path laser ionisation effect simulation system.The system can It exports 532nm simultaneously and the dual-wavelength laser of 1064nm simulates ionization effect of radiation, and is enterprising in optical path and structure It has gone and has advanced optimized, grind it can flexibly and fast to semiconductor devices radiation dose rate effect in laboratory conditions Study carefully and verifies.
The technical solution of the utility model is as follows:
A kind of optimization integrated form double light path laser ionisation effect simulation system, it is characterised in that: including adjusting pedestal, light Source, double light path attenuation module, microexamination module, test and control module;
The adjustment pedestal supports entire simulation system for stablizing;
The light source, is installed on adjustment pedestal top, and the pulse laser for being 532nm and 1064nm for generation wavelength makes Two-way laser enters double light path attenuation module in the horizontal direction;
The double light path attenuation module, decays for the energy to binary channels pulse laser;
The microexamination module, for being seen to the hot spot formed in the laser irradiation to sample to be tested reflected It examines;
The test and control module, for collecting and recording the response electric signal of sample to be tested ionization effect of radiation.
The adjustment pedestal includes leveling serew and longitudinally mounted in the guide rail on adjustment pedestal, and leveling serew is for adjusting The horizontal position of pedestal is adjusted, guide rail is used to adjust the height of system.
The light source is located at adjustment pedestal top, including double-wavelength pulse laser and optical path lifter;The dual wavelength The laser that pulse laser is 532nm and 1064nm for generation wavelength simultaneously, because the laser of 532nm is obtained by 1064nm frequency multiplication It arrives, therefore two wavelength lasers are respectively from two channel horizontal exits, it can be every by double-wavelength pulse laser independent control The switch in a channel;The optical path lifter is made of, two anti-for carrying out light path folding the reflecting mirror of two positional symmetries It penetrates mirror and is set to same longitudinal direction, the reflecting mirror positioned at lower part is used for the laser reflection of double-wavelength pulse laser to top Reflecting mirror, laser level is reflexed to double light path attenuation module again by the reflecting mirror on top, and guarantees to enter double light path decaying The two-way laser of module keeps horizontal.
The double light path attenuation module is wholy set in above light source, and is installed in another hood, along two-way laser Approach axis successively includes right-angle prism, optical path I, optical path II, reflecting mirror two and beam cementing prism.Specifically, two-way laser After right-angle prism reflects, laser enters optical path I all the way, then through two back reflection of reflecting mirror to beam cementing prism;Another way laser By optical path II, it is emitted directly toward beam cementing prism, two-way laser closes beam back reflection via beam cementing prism and goes out.The optical path I, optical path II Respectively symmetrically it is located at along two reflection angle directions of right-angle prism, optical path I is identical with the structure of optical path II, and each optical path is equal Including be located at right-angle prism reflection direction on reflecting mirror one, positioned at one reflection direction of reflecting mirror 1/2 λ wave plate of the first order, Positioned at the first order polarization splitting prism of 1/2 λ wave plate of first order transmission light direction, positioned at the transmission of first order polarization splitting prism The 1/2 λ wave plate of the second level of light direction, the second level polarization splitting prism on 1/2 λ wave plate of second level transmission light direction, position In the second level polarization splitting prism reflection light direction on optical beam dump one, positioned at the reflected light of first order polarization splitting prism The Amici prism one in direction, is located at Amici prism one instead at the laser energy meter probe one that light direction is transmitted positioned at Amici prism one Optical beam dump two, the beam homogenization device on second level polarization splitting prism transmission light direction for penetrating light direction, swash all the way Beam homogenization device of the light Jing Guo optical path I is irradiated to reflecting mirror two and is reflected into beam cementing prism, and another way laser is by optical path II Beam homogenization device shines directly into beam cementing prism, and two-way laser injects to subsequent optical path after beam cementing prism synthesis.The right angle Two right-angle surfaces of prism distinguish plated film, and a right-angle surface plates 532nm high reflection film, and it is anti-that another right-angle surface plates 1064nm high Penetrate rate film.After right-angle prism reflects, the laser of 1064nm enters optical path I, and the laser of 532nm enters optical path II.
The beam homogenization device can convert the Gauss light of diameter 4mm to the flat-top light that spot size is 10mm.
Preferably, the interior surface of hood is coarse, mirror-reflection does not occur, and quick detachable.
The microexamination module is provided with Amici prism two along the laser direction that beam cementing prism comes out, on Amici prism two End is provided with microscope tube and lighting source, camera, and laser energy meter spy is provided on the transmission light direction of Amici prism two First two, the reflection light direction of Amici prism two is provided with variable light spot adjusting device;Laser is after Amici prism two, transmitted light Laser energy meter probe two is reached, reflected light is irradiated on sample to be tested by variable light spot adjusting device, hot spot adjustable range For 10 μm of -10mm.
Preferably, lighting source is the continuous laser that wavelength is 532nm, and power is not more than 1mW.
The test and precision displacement platform and oscillograph that control module includes for placing sample to be tested, sample to be tested It is placed on precision displacement platform, by control precision displacement platform come accurately controlling hot spot acts on the position on sample to be tested It sets;Preferably, precision displacement platform is six-degree of freedom displacement platform;The test and control module further include and six degree of freedom position Move platform, the data acquisition of oscilloscope signal connection is connect with data acquisition with control card with control card, for control system Computer.The module can carry out focusing by adjusting six-degree of freedom displacement platform and spot size is adjusted, and laser irradiation is to be measured For electrical response signal after on sample by oscillograph triggering collection, data acquisition is used for the picture number of acquisition camera with control card Accordingly and the Wave data of oscillograph, and the position of six-degree of freedom displacement platform is controlled, is stored by computer and is shown.
The beneficial effects of the utility model are as follows:
The utility model proposes simulation system be a kind of simulation system that can be used for laboratory research, can be achieved at the same time double Wavelength output, using double light path decaying two-way laser, using 532nm and 1064nm laser analog ionization effect of radiation, the simulation System flexibly and fast is studied and is verified to semiconductor devices radiation dose rate effect in laboratory conditions, to optical path into One-step optimization, structure optimization obtain more compact and have integration, can effectively reduce experimentation cost, improve test efficiency, shorten The design cycle of radiation tolerance design.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the utility model.
Fig. 2 is the overlooking structure diagram of the adjustment pedestal (I) of the utility model.
Fig. 3 is the overlooking structure diagram of the light source (II) of the utility model.
Fig. 4 is the overlooking structure diagram of the double light path attenuation module (III) of the utility model.
Wherein, appended drawing reference are as follows: I is adjustment pedestal, and II is light source, and III is double light path attenuation module, and IV is microexamination Module, V is test and memory module, and 1 is double-wavelength pulse laser, and 2 be optical path lifter, and 3 be right-angle prism, and 4 be reflection Mirror one, 5 be 1/2 λ wave plate of the first order, and 6 be first order polarization splitting prism, and 7 be 1/2 λ wave plate of the second level, and 8 polarize for the second level Amici prism, 9 be optical beam dump one, and 10 be Amici prism one, and 11 be laser energy meter probe one, and 12 be optical beam dump Two, 13 be beam homogenization device, and 14 be reflecting mirror two, and 15 be beam cementing prism, and 16 be Amici prism two, and 17 be camera, and 18 be photograph Mingguang City source, 19 be laser energy meter probe two, and 20 be variable light spot adjusting device, and 21 be sample to be tested, and 22 be six degree of freedom position Platform is moved, 23 be oscillograph, and 24 be data acquisition and control card, and 25 be computer, and 26 be leveling serew, and 27 be guide rail.
Specific embodiment
The example of the utility model is described in detail below in conjunction with attached drawing.
Referring to Fig. 1, a kind of optimization integrated form double light path laser ionisation effect simulation system, including adjustment pedestal I, light source II, double light path attenuation module III, microexamination module IV, test and memory module V.
Referring to fig. 2, the adjustment pedestal I supports entire simulation system for stablizing, and includes leveling serew 26 and longitudinal peace Loaded on the guide rail 27 on adjustment pedestal, leveling serew 26 is used to adjust the horizontal position of adjustment pedestal, and guide rail 27 is for adjusting system The height of system.
Referring to Fig. 3, the light source II is installed on adjustment I top of pedestal, includes the dual wavelength being installed in a hood Pulse laser 1 and optical path lifter 2;The double-wavelength pulse laser 1 is swashing for 532nm and 1064nm for generation wavelength Light, because the laser of 532nm is to be obtained by 1064nm frequency multiplication, therefore two wavelength lasers are respectively from two channel horizontal exits, The switch in each channel of 1 independent control of double-wavelength pulse laser can be passed through;The optical path lifter 2 is for carrying out optical path folding It is folded, it is made of the reflecting mirror of two positional symmetries, two reflecting mirrors are set to same longitudinal direction, and the reflecting mirror positioned at lower part is used Laser level is reflexed to again in by the reflecting mirror of the reflecting mirror of the laser reflection of double-wavelength pulse laser 1 to top, top Double light path attenuation module III, and guarantee that the two-way laser holding for entering double light path attenuation module III is horizontal.
Referring to fig. 4, the double light path attenuation module III is wholy set in II top of light source, and is installed on another hood It is interior, it successively include right-angle prism 3, optical path I, optical path II, reflecting mirror (14) and beam cementing prism along two-way laser approach axis (15).Specifically, two-way laser is after the reflection of right-angle prism 3, and laser enters optical path I all the way, then after reflecting mirror (14) It is reflected into beam cementing prism (15);Another way laser passes through optical path II, is emitted directly toward beam cementing prism (15), and two-way laser is via conjunction beam Prism (15) closes beam back reflection and goes out.The optical path I, optical path II are respectively symmetrically located at two reflection angles along right-angle prism (3) On direction, optical path I is identical with the structure of optical path II, and each optical path includes anti-on the reflection direction of right-angle prism (3) It penetrates mirror one (4), the 1/2 λ wave plate (5) of the first order for being located at reflecting mirror one (4) reflection direction, be located at 1/2 λ wave plate (5) of the first order thoroughly Penetrate the second level of the first order polarization splitting prism (6) of light direction, the transmission light direction for being located at first order polarization splitting prism (6) 1/2 λ wave plate (7), is located at second at the second level polarization splitting prism (8) being located on 1/2 λ wave plate (7) of second level transmission light direction Grade polarization splitting prism (8) reflect light direction on optical beam dump one (9), be located at first order polarization splitting prism (6) it is anti- Penetrate light direction Amici prism one (10), be located at Amici prism one (10) transmission light direction laser energy meter pop one's head in one (11), Positioned at the optical beam dump two (12) of Amici prism (10) reflection light direction, positioned at second level polarization splitting prism (8) transmitted light Beam homogenization device (13) on direction, beam homogenization device (13) of the laser Jing Guo optical path I is irradiated to reflecting mirror two (14) simultaneously all the way It is reflected into beam cementing prism (15), beam homogenization device (13) of the another way laser Jing Guo optical path II shines directly into beam cementing prism (15), two-way laser injects to subsequent optical path after beam cementing prism (15) synthesis.Two right-angle surfaces of the right-angle prism (3) point Other plated film, a right-angle surface plate 532nm high reflection film, another right-angle surface plates 1064nm high reflection film.By right-angled edge After mirror (3) reflection, the laser of 1064nm enters optical path I, and the laser of 532nm enters optical path II.Only by taking optical path I as an example specifically Bright: 1064nm laser is reflected by reflecting mirror (4), enters light after 1/2 λ wave plate of two-stage and polarization splitting prism combination decaying Beam homogenizer (13), wherein the reflected light after first order polarization splitting prism (6) is incident on Amici prism one (10), warp Transmitted light after crossing Amici prism one (10) is anti-after Amici prism one (10) by one (11) acquisition of laser energy meter probe Light is penetrated to be collected by optical beam dump two (12).Laser energy meter pops one's head in one (11) for the laser energy after acquiring first order decaying Amount.Reflected light after second level polarization splitting prism (8) is collected by optical beam dump one (9), by second level polarization point Transmitted light after light prism (8) is incident on beam homogenization device (13).The work of optical beam dump one (9), optical beam dump two (12) With being that laser is avoided to reveal, keep entire optical path more safe and reliable.The effect of beam homogenization device (13) is to convert Gauss light to Flat-top light, the laser facula size for being incident on beam homogenization device (13) is the Gauss light of 4mm, after beam homogenization device (13), Become the flat-top light that spot size is 10mm.Flat-top light compares Gauss light, and the Energy distribution of laser is more uniform, to make system Test result is relatively reliable and stablizes.1064nm laser after homogenizing in optical path I reaches after reflecting mirror two (14) closes beam rib Mirror (15) carries out conjunction beam with the 532nm laser after homogenizing in optical path II at beam cementing prism (15), and two wavelength lasers share subsequent Optical path.
Referring to Fig. 1, the microexamination module (IV), for the laser irradiation of pairing beam back reflection out to sample to be tested (21) hot spot formed on is observed;The microexamination module (IV), the laser direction come out along beam cementing prism (15) are set It is equipped with Amici prism two (16), Amici prism two (16) upper end is provided with microscope tube and lighting source (17), camera (18), Two (19) of laser energy meter probe, the reflected light of Amici prism two (16) are provided on the transmission light direction of Amici prism two (16) Direction is provided with variable light spot adjusting device (20);For laser after Amici prism two (16), transmitted light reaches laser energy meter Two (19) of probe, reflected light are irradiated on sample to be tested 21 by variable light spot adjusting device (20), and hot spot adjustable range is 10 μ m-10mm。
Referring to Fig. 1, the test and memory module (V) for placing sample to be tested (21), and are provided with for carrying out The device that focusing and spot size are adjusted, while the electrical response after can acquiring and measuring in laser irradiation to sample to be tested (21) Signal.It is described test with memory module (V), comprising: for place sample to be tested (21) six-degree of freedom displacement platform (22), For testing the oscillograph (23) of sample to be tested (21) signal, connecting with six-degree of freedom displacement platform (22), oscillograph (23) signal The data acquisition connect acquires the computer (25) connecting with control card (24) with data with control card (24), for control system. The module can carry out focusing by adjusting six-degree of freedom displacement platform (22) and spot size is adjusted, and laser irradiation is to test sample Electrical response signal after on product (21) is by oscillograph (23) triggering collection, and data acquisition is with control card (24) for acquiring camera shooting The head image data of (18) and the Wave data of oscillograph (23), and the position of six-degree of freedom displacement platform (22) is controlled, by Computer (25) storage and display.

Claims (6)

1. a kind of optimization integrated form double light path laser ionisation effect simulation system, it is characterised in that: including whole for stablizing support The adjustment pedestal (I) of a simulation system, the light source (II) for generating double channel wavelength laser, for the pulse to two channels Double light path attenuation module (III) that laser energy is decayed, for being imaged to semiconductor devices sample and carrying out energy survey The microexamination module (IV) of amount, the response electric signal for collecting and recording sample to be tested ionization effect of radiation and control hot spot The test of active position and control module (V);The light source (II) pulse that generation wavelength is 532nm and 1064nm simultaneously swashs Light;The double light path attenuation module (III) is set to above light source (II), successively includes right angle along two-way laser approach axis Prism (3), optical path I, optical path II, reflecting mirror two and beam cementing prism;Two-way laser is after right-angle prism (3) are reflected: laser all the way Through reflecting mirror two (14) back reflection to beam cementing prism (15) after into optical path I, another way laser is emitted directly toward after optical path II Beam cementing prism (15), two-way laser close beam back reflection via beam cementing prism (15) and go out;The optical path I, optical path II respectively symmetrically position In on two reflection angle directions along right-angle prism, optical path I is identical with the structure of optical path II, and each optical path includes being located at directly Reflecting mirror one (4) on the reflection direction of angle prism, the 1/2 λ wave plate (5) of the first order positioned at reflecting mirror one (4) reflection direction, position In the first order polarization splitting prism (6) of 1/2 λ wave plate (5) of first order transmission light direction, positioned at first order polarization splitting prism (6) the 1/2 λ wave plate (7) of the second level of transmission light direction, the second level being located on 1/2 λ wave plate (7) of second level transmission light direction Polarization splitting prism (8), is located at the at the optical beam dump one (9) being located on second level polarization splitting prism (8) reflection light direction The Amici prism one (10) of the reflection light direction of level-one polarization splitting prism (6) is located at Amici prism one (10) transmission light direction Laser energy meter pop one's head in one (11), be located at Amici prism one (10) reflection light direction optical beam dump two (12), be located at the Second level polarization splitting prism (8) transmits the beam homogenization device (13) on light direction, all the way beam homogenization device of the laser Jing Guo optical path I (13) it is irradiated to reflecting mirror two (14) and is reflected into beam cementing prism (15), beam homogenization device of the another way laser Jing Guo optical path II (13) it shines directly into beam cementing prism (15), two-way laser injects to subsequent optical path after beam cementing prism (15) synthesize.
2. a kind of optimization integrated form double light path laser ionisation effect simulation system according to claim 1, which is characterized in that Adjustment pedestal (I) includes to adjust the leveling serew (26) of horizontal position of pedestal (I) and longitudinally mounted in tune for adjusting Guide rail (27) on whole pedestal.
3. a kind of optimization integrated form double light path laser ionisation effect simulation system according to claim 1, which is characterized in that The light source (II) is located at adjustment pedestal (I) top, pair including the laser for being 532nm and 1064nm for generation wavelength simultaneously Wavelength pulsed laser device (1) and optical path lifter (2) for carrying out light path folding.
4. a kind of optimization integrated form double light path laser ionisation effect simulation system according to claim 1, which is characterized in that The microexamination module (IV) is provided with Amici prism two (16), Amici prism along the laser direction that beam cementing prism (15) come out Two (16) upper ends are provided with microscope tube and lighting source (18), camera (17), the transmission light direction of Amici prism two (16) On be provided with laser energy meter and pop one's head in two (19), the reflection light direction of Amici prism two (16) is provided with variable light spot adjusting device (20);Laser is after Amici prism two (16), and transmitted light reaches two (19) of laser energy meter probe, and reflected light is passed through can darkening Spot regulating device (20) is irradiated on sample to be tested (21).
5. a kind of optimization integrated form double light path laser ionisation effect simulation system according to claim 1, which is characterized in that It is described test with control module (V) include for placing the precision displacement platform of sample to be tested (21), oscillograph (23), it is described Precision displacement platform is six-degree of freedom displacement platform (22).
6. a kind of optimization integrated form double light path laser ionisation effect simulation system according to claim 1, which is characterized in that The test further includes that the data connecting with six-degree of freedom displacement platform (22), oscillograph (23) signal are adopted with control module (V) Collect and acquires the computer (25) connecting with control card (24) with data with control card (24), for control system.
CN201721524323.6U 2017-11-15 2017-11-15 A kind of optimization integrated form double light path laser ionisation effect simulation system Expired - Fee Related CN208208151U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201721524323.6U CN208208151U (en) 2017-11-15 2017-11-15 A kind of optimization integrated form double light path laser ionisation effect simulation system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201721524323.6U CN208208151U (en) 2017-11-15 2017-11-15 A kind of optimization integrated form double light path laser ionisation effect simulation system

Publications (1)

Publication Number Publication Date
CN208208151U true CN208208151U (en) 2018-12-07

Family

ID=64489730

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201721524323.6U Expired - Fee Related CN208208151U (en) 2017-11-15 2017-11-15 A kind of optimization integrated form double light path laser ionisation effect simulation system

Country Status (1)

Country Link
CN (1) CN208208151U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107833511A (en) * 2017-11-15 2018-03-23 中国工程物理研究院电子工程研究所 One kind optimization integrated form double light path laser ionisation effect simulation system

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107833511A (en) * 2017-11-15 2018-03-23 中国工程物理研究院电子工程研究所 One kind optimization integrated form double light path laser ionisation effect simulation system
CN107833511B (en) * 2017-11-15 2023-11-24 中国工程物理研究院电子工程研究所 Optimization integrated double-light-path laser ionization effect simulation system

Similar Documents

Publication Publication Date Title
CN105807305B (en) A kind of double-wavelength pulse laser radiation dose rate effect analog system
CN105259565B (en) A kind of semiconductor devices radiation dose rate effect laser simulation system
CN102175594B (en) Device for measuring damage threshold under combined action of three-wavelength pulse laser and debugging method
CN108519218B (en) Optical element multiwavelength laser damage measure and analysis system
CN111504612B (en) Testing arrangement of many light sources laser damage threshold value
CN111474174B (en) Large-caliber optical element damage density testing device and method
CN109186945A (en) The measuring device and method of heavy-caliber optical grating diffraction efficiency spectrum and its uniformity
CN110823388A (en) Film thermal response single-pulse detection method under ultrafast laser photon time stretching
Mavritskii et al. Laser equipment for hardness evaluation of semiconductor elements exposed to heavy charged particles
CN208208156U (en) A kind of optimization integrated form monochromatic light road laser ionization effect analog system
CN105510809B (en) Pul sed laser simulation single particle experiment system and method
CN208208151U (en) A kind of optimization integrated form double light path laser ionisation effect simulation system
CN208208152U (en) A kind of integrated form double light path laser ionisation effect simulation system
CN107886820B (en) Integrated double-light-path laser ionization effect simulation system
CN207557412U (en) A kind of integrated laser ionisation effect simulation system
CN113394647B (en) Terahertz wave phase adjustment and control system based on line bias position
CN107886823B (en) Optimization integrated single-light-path laser ionization effect simulation system
CN105738372B (en) A kind of photo-thermal weak absorbing test macro and method
CN219694503U (en) Device for measuring radial misalignment distance of light beams in double-beam optical trap
CN107833511B (en) Optimization integrated double-light-path laser ionization effect simulation system
CN112595493A (en) Common target surface measuring device and method for laser damage threshold and nonlinear absorption
CN107907813A (en) A kind of integrated laser ionisation effect simulation system
CN205664955U (en) Spatial distribution measurement system of extreme ultraviolet source collecting mirror temperature
Godwin et al. Reflection losses from laser-produced plasmas
CN206353191U (en) A kind of wide band gap semiconductor device radiation effect laser simulation system

Legal Events

Date Code Title Description
GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20181207

Termination date: 20191115

CF01 Termination of patent right due to non-payment of annual fee