CN208201121U - A kind of graphite plate applied to Aixtron Crius II type - Google Patents
A kind of graphite plate applied to Aixtron Crius II type Download PDFInfo
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- CN208201121U CN208201121U CN201820793500.9U CN201820793500U CN208201121U CN 208201121 U CN208201121 U CN 208201121U CN 201820793500 U CN201820793500 U CN 201820793500U CN 208201121 U CN208201121 U CN 208201121U
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Abstract
The utility model provides a kind of graphite plate applied to Aixtron Crius II type, comprising: disk body, film releasing slot, limited block, first step, groove, boss, second step, third step；The film releasing slot is arranged on disk body by embedded mode；The limited block is arranged on the inner wall of film releasing slot by embedded mode；The groove is located at the bottom end of film releasing slot；The side of groove is arranged in the first step；The other side of groove is arranged in the boss；The other side of boss is arranged in the second step；The other side of second step is arranged in the third step；The utility model passes through the improvement to the graphite plate for being applied to Aixtron Crius II type, with it is reasonable in design, film releasing position improved according to Wavelength distribution rule, improve the heated situation of substrate, improve monolithic wavelength and electrical uniformity, the advantages of improving chip yield, thus the problem of effective solution the utility model proposes in background technique one and deficiency.
Description
Technical field
The utility model relates to chemical vapour deposition technique fields, more specifically, more particularly to a kind of solution production reality
The problem of the difference of wavelength uniformity present in border, that improves monolithic, single furnace and different heat product concentration degrees is applied to Aixtron
The graphite plate of Crius II type.
Background technique
MOCVD (Metal-Organic Chemical Vapor Deposition) is that have with III group, II race element
The source material as crystal growth such as hydride of machine compound and V, VI race element, in a manner of pyrolysis on graphite plate
Depositing operation is carried out, the thin layer list of various iii-vs, II-VI group compound semiconductor and their multivariate solid solution is grown
Brilliant material.
The chemical vapor deposition process equipment of the prior art generally comprises: the spray head and graphite plate being oppositely arranged, described
Multiple apertures inside can be set for providing reaction gas in spray head, have multiple grooves in graphite plate, right in each groove
A piece of substrate should be placed, in the lower section of graphite plate, there are also heating devices, to be heated to graphite plate, the heated heating of graphite plate,
Substrate can be heated with heat radiation and heat exchange pattern.When carrying out MOCVD technique, reaction gas is from the small of spray head
Hole enters the conversion zone above graphite plate, and substrate has certain temperature since the heat transfer of heating device heats, the temperature
Degree between reaction gas so that chemically reacted, to deposit epitaxial material in substrate surface.
Epitaxial device compared with frequently be Aixtron Crius II type, gradually all from former 2 cun of growths switch to using
Diameter is 4 inches of substrate growth, and the characteristics of due to the defect of hardware and 4 cun of extensions, the center and periphery of epitaxial wafer are heated not
Uniformly, cause uniformity in the epitaxial wafer piece grown to be deteriorated, seriously affect the uniformity and yield of chip, current each factory
The graphite plate that family provides has continued to use original 2 cun of graphite plates, and the general adjustment carried out on this basis does not all reach good
Effect cannot fundamentally solve the problems, such as wavelength uniformity.
Purpose of the utility model is to overcome the above-mentioned shortcomings and provide a kind of applied to Aixtron Crius II type
Graphite plate is able to solve the problem of wavelength uniformity difference existing for production in practice.
Utility model content
The purpose of this utility model is to provide a kind of graphite plates applied to Aixtron Crius II type, to solve
Epitaxial device mentioned above in the background art compared with frequently be Aixtron Crius II type, gradually all from former 2 cun
Growth switchs to using diameter be 4 inches of substrate growth, the characteristics of due to the defect of hardware and 4 cun of extensions, the center of epitaxial wafer
It is even with peripheral uneven heating, cause in the epitaxial wafer piece grown uniformity to be deteriorated, seriously affects the uniformity of chip and good
Rate, the graphite plate that each producer provides at present have continued to use original 2 cun of graphite plates, and the general adjustment carried out on this basis does not all have
Have and reach good effect, cannot fundamentally solve the problems, such as wavelength uniformity and deficiency.
To achieve the above object, the utility model provides a kind of graphite applied to Aixtron Crius II type
Disk is reached by technological means in detail below:
A kind of graphite plate applied to Aixtron Crius II type, comprising: disk body, film releasing slot, limited block, First
Rank, groove, boss, second step, third step；The film releasing slot is arranged on disk body by embedded mode；The limited block
It is arranged on the inner wall of film releasing slot by embedded mode；The groove is located at the bottom end of film releasing slot；The first step setting exists
The side of groove；The other side of groove is arranged in the boss；The other side of boss is arranged in the second step；The third
The other side of second step is arranged in step.
As advanced optimizing for the technical program, the utility model is a kind of applied to Aixtron Crius II type
Film releasing slot described in graphite plate is provided with 14 altogether, and two circles, film releasing slot is distributed in film releasing slot circular array shape on disk body
It is four in the number of inner ring setting, in outer ring, setting is ten in number.
As advanced optimizing for the technical program, the utility model is a kind of applied to Aixtron Crius II type
Film releasing groove top end and the junction of disk body described in graphite plate are provided with round-corner transition.
As advanced optimizing for the technical program, the utility model is a kind of applied to Aixtron Crius II type
The vertical view face of limited block described in graphite plate is in " Ω " shape, and is respectively provided in each film releasing slot there are six limited block, and limited block is being put
Circular array shape is distributed on the inner wall of film trap.
As advanced optimizing for the technical program, the utility model is a kind of applied to Aixtron Crius II type
The width of groove described in graphite plate is set as 0-1 millimeters.
As advanced optimizing for the technical program, the utility model is a kind of applied to Aixtron Crius II type
Height difference setting between first step top and groove top described in graphite plate is 0-0.25 millimeters.
As advanced optimizing for the technical program, the utility model is a kind of applied to Aixtron Crius II type
The arc-shaped shape of the cutting plane of boss described in graphite plate, and the height difference setting between boss top and groove top is 0-0.02
Millimeter.
As advanced optimizing for the technical program, the utility model is a kind of applied to Aixtron Crius II type
Height difference setting between second step top and boss least significant end described in graphite plate is 0-0.03 millimeters.
As advanced optimizing for the technical program, the utility model is a kind of applied to Aixtron Crius II type
Height difference setting between third step top and second step top described in graphite plate is 0-0.03 millimeters.
Due to the application of the above technical scheme, the utility model has the advantage that compared with prior art
1, the utility model film releasing slot is provided with 14 altogether, and film releasing slot circular array shape on disk body is distributed with two
Circle, the number that film releasing slot be arranged in inner ring are four, are arranged in the setting that number is ten in outer ring, realization to each position by
The level that the more position of easy deviation is withdrawn into most of position is come up, realizes that whole disk is equal by the artificial control of heat and flow field
The raising of even property.
2, the arc-shaped shape of the cutting plane of the utility model boss, and the difference in height between boss top and groove top is set
It is set to 0-0.02 millimeters of setting, which is that radially one end remote apart from the graphite plate center of circle be therefrom for graphite plate in film releasing slot
The heart meets the rule of film releasing slot inner ring, outer ring wavelength to the difference in height of step, can improve the heated situation of substrate.
3, the height difference setting between the utility model second step top and boss least significant end is 0-0.03 millimeters and sets
It sets, which is the graphite plate radially difference in height of one end close apart from the graphite plate center of circle from center to step in film releasing slot,
The rule for meeting film releasing slot inner ring, outer ring wavelength can improve the heated situation of substrate.
4, the utility model is set by the improvement to the graphite plate for being applied to Aixtron Crius II type with structure
Meter rationally, by film releasing position is improved according to Wavelength distribution rule, improves the heated situation of substrate, improves monolithic wavelength and electricity
Property uniformity, the advantages of improving chip yield, so that effective solution the utility model proposes in background technique one
The problem of and deficiency.
Detailed description of the invention
The attached drawing constituted part of this application is used to provide a further understanding of the present invention, the utility model
Illustrative embodiments and their description are not constituteed improper limits to the present invention for explaining the utility model.In attached drawing
In:
Fig. 1 is the overlooking structure diagram of the utility model；
Fig. 2 is the film releasing slot structure schematic diagram of the utility model；
Fig. 3 is enlarged structure schematic diagram at the A of the utility model；
Fig. 4 is the film releasing slot cutting plane structural schematic diagram of the utility model.
In figure: disk body 1, film releasing slot 2, limited block 3, first step 4, groove 5, boss 6, second step 7, third step 8.
Specific embodiment
The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model
Clearly and completely describe, it is clear that the described embodiments are only a part of the embodiments of the utility model, rather than whole
Embodiment.
It should be noted that in the description of the present invention, unless otherwise indicated, the meaning of " plurality " is two or two
More than a；The instructions such as term " on ", "lower", "left", "right", "inner", "outside", " front end ", " rear end ", " head ", " tail portion "
Orientation or positional relationship is to be based on the orientation or positional relationship shown in the drawings, and is merely for convenience of description the utility model and simplification
Description, rather than the device or element of indication or suggestion meaning must have a particular orientation, constructed and grasped with specific orientation
Make, therefore should not be understood as limiting the present invention.
In addition, term " first ", " second ", " third " etc. are used for description purposes only, it is not understood to indicate or imply
Relative importance.
Meanwhile in the description of the present invention, unless otherwise clearly defined and limited, term " connected ", " connection "
It shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected；It can be mechanical connect
It connects, is also possible to be electrically connected；It can be directly connected, it can also be indirectly connected through an intermediary.For the general of this field
For logical technical staff, the concrete meaning of above-mentioned term in the present invention can be understood with concrete condition.
Referring to Figure 1 to Fig. 4, the utility model provides a kind of graphite plate applied to Aixtron Crius II type
Particular technique embodiment:
A kind of graphite plate applied to Aixtron Crius II type, comprising: disk body 1, film releasing slot 2, limited block 3,
One step 4, groove 5, boss 6, second step 7, third step 8；Film releasing slot 2 is arranged on disk body 1 by embedded mode；Limit
Block 3 is arranged on the inner wall of film releasing slot 2 by embedded mode；Groove 5 is located at the bottom end of film releasing slot 2；First step 4 is arranged in ditch
The side of slot 5；The other side of groove 5 is arranged in boss 6；The other side of boss 6 is arranged in second step 7；Third step 8 is arranged
In the other side of second step 7.
Specifically, film releasing slot 2 is provided with 14 altogether, and the circular array shape on disk body 1 of film releasing slot 2 is distributed with two
Circle, the number that film releasing slot 2 be arranged in inner ring are four, and in outer ring, setting is ten in number, realize it is heated to each position with
The level that the more position of easy deviation is withdrawn into most of position is come up, realizes whole disk uniformity by the artificial control in flow field
Raising.
Specifically, 2 top of film releasing slot and the junction of disk body 1 are provided with round-corner transition.
Specifically, the vertical view face of limited block 3 is in " Ω " shape, and is respectively provided with there are six limited block in each film releasing slot 2, limit
Block circular array shape on the inner wall of film releasing slot 2 is distributed.
Specifically, the width of groove 5 is set as 0-1 millimeters.
Specifically, the height difference setting between 5 top of 4 top of first step and groove is 0-0.25 millimeters.
Specifically, the arc-shaped shape of the cutting plane of boss 6, and the height difference setting between 5 top of 6 top of boss and groove
Be 0-0.02 millimeters, the difference in height be in film releasing slot 2 graphite plate radially one end remote apart from the graphite plate center of circle from center to platform
The difference in height of rank meets the rule of film releasing slot inner ring, outer ring wavelength, can improve the heated situation of substrate.
Specifically, the height difference setting between 6 least significant end of 7 top of second step and boss is 0-0.03 millimeters, the height
Difference is the graphite plate radially difference in height of one end close apart from the graphite plate center of circle from center to step in film releasing slot 2, meets film releasing
The rule of slot inner ring, outer ring wavelength can improve the heated situation of substrate.
Specifically, the height difference setting between 7 top of 8 top of third step and second step is 0-0.03 millimeters.
Specific implementation step:
As shown in Figure 1, film releasing slot 2 is provided with 14, and the circular array shape on disk body 1 of film releasing slot 2 in disk body 1
Two circles are distributed with, film releasing slot 2 is four in the number that inner ring is arranged, and setting is ten in number in outer ring, by putting for graphite plate
The carry out adaptability design of piece position, it is to realize heated to each position and flow field artificial control, easy deviation is more
The level that position is withdrawn into most of position is come up, and realizes the raising of whole disk uniformity, and Internal and external cycle can be according to the actual situation
Be designed into different specification, to adapt to epitaxial growth, guarantee in piece and outside piece it is uniform, reach high product yield；
Again as shown in figure 4, difference in height between 5 top of 6 top of boss and groove is that graphite plate is radially in film releasing slot 2
Difference in height of the one end remote apart from the graphite plate center of circle from center to step；Height between 6 least significant end of 7 top of second step and boss
Degree difference is the graphite plate radially difference in height of one end close apart from the graphite plate center of circle from center to step in film releasing slot 2；Third platform
Difference in height between 7 top of 8 top of rank and second step be in film releasing slot graphite plate radially apart from the graphite plate center of circle it is close two
The difference in height of a big step carries out the setting for meeting wavelength rule according to outer ring, inner ring, can improve the heated situation of substrate.
The utility model has the following beneficial effects:
1, Aixtron Crius II type is directly applied to, 14 machines are divided into the groove setting of inside and outside two circle, by graphite
The carry out adaptability design of the film releasing position of disk, to realize heated to each position and flow field artificial control, by easy deviation
The level that more position is withdrawn into most of position is come up, and realizes the raising of whole disk uniformity；
2, the uniformity for improving monolithic wavelength and electrical property, in film releasing slot graphite plate radially apart from the graphite plate center of circle it is close one
Hold difference in height from center to step and graphite plate in film releasing slot radially one end remote apart from the graphite plate center of circle from center to platform
The difference in height of rank carries out the setting for meeting wavelength rule according to outer ring, inner ring, can improve the heated situation of substrate.
In summary: a kind of graphite plate applied to Aixtron Crius II type is provided with altogether by film releasing slot
14, and two circles are distributed in film releasing slot circular array shape on disk body, film releasing slot is four in the number that inner ring is arranged,
The setting that number is ten is arranged in outer ring, realizes heated to each position and flow field artificial control, and easy deviation is more
Position be withdrawn into the level of most of position and come up, realize the raising of whole disk uniformity；It is arc-shaped by the cutting plane of boss
Shape, and the setting that the height difference setting between boss top and groove top is 0-0.02 millimeters, the difference in height are film releasing slot
The interior graphite plate radially difference in height of one end remote apart from the graphite plate center of circle from center to step, meets film releasing slot inner ring, outer ring
The rule of wavelength can improve the heated situation of substrate；It is set by the difference in height between second step top and boss least significant end
It is set to 0-0.03 millimeters of setting, which is that radially one end close apart from the graphite plate center of circle be therefrom for graphite plate in film releasing slot
The heart meets the rule of film releasing slot inner ring, outer ring wavelength to the difference in height of step, can improve the heated situation of substrate；By right
The improvement of graphite plate applied to Aixtron Crius II type, have it is reasonable in design, by film releasing position according to wavelength
The regularity of distribution improves, and improves the heated situation of substrate, improves monolithic wavelength and electrical uniformity, improves chip yield
Advantage, thus the problem of effective solution the utility model proposes in background technique one and deficiency.
While there has been shown and described that the embodiments of the present invention, for the ordinary skill in the art,
It is understood that these embodiments can be carried out with a variety of variations in the case where not departing from the principles of the present invention and spirit, repaired
Change, replacement and variant, the scope of the utility model is defined by the appended claims and the equivalents thereof.
Claims (9)
1. a kind of graphite plate applied to Aixtron Crius II type, comprising: disk body (1), film releasing slot (2), limited block
(3), first step (4), groove (5), boss (6), second step (7), third step (8)；It is characterized by: the film releasing slot
(2) it is arranged on disk body (1) by embedded mode；The inner wall in film releasing slot (2) is arranged by embedded mode for the limited block (3)
On；The groove (5) is located at the bottom end of film releasing slot (2)；Side of first step (4) setting in groove (5)；The boss
(6) it is arranged in the other side of groove (5)；The other side of second step (7) setting in boss (6)；The third step (8)
The other side in second step (7) is set.
2. a kind of graphite plate applied to Aixtron Crius II type according to claim 1, it is characterised in that: institute
It states film releasing slot (2) and is provided with 14 altogether, and two circles, film releasing slot is distributed in film releasing slot (2) circular array shape on disk body (1)
It (2) is four in the number of inner ring setting, in outer ring, the number of setting is ten.
3. a kind of graphite plate applied to Aixtron Crius II type according to claim 1, it is characterised in that: institute
The junction for stating film releasing slot (2) top and disk body (1) is provided with round-corner transition.
4. a kind of graphite plate applied to Aixtron Crius II type according to claim 1, it is characterised in that: institute
It states the vertical view face of limited block (3) and is respectively provided with that there are six limited blocks in " Ω " shape, and in each film releasing slot (2), limited block is in film releasing
Circular array shape is distributed on the inner wall of slot (2).
5. a kind of graphite plate applied to Aixtron Crius II type according to claim 1, it is characterised in that: institute
The width for stating groove (5) is set as 0-1 millimeters.
6. a kind of graphite plate applied to Aixtron Crius II type according to claim 1, it is characterised in that: institute
Stating the height difference setting between first step (4) top and groove (5) top is 0-0.25 millimeters.
7. a kind of graphite plate applied to Aixtron Crius II type according to claim 1, it is characterised in that: institute
The arc-shaped shape of cutting plane of boss (6) is stated, and the height difference setting between boss (6) top and groove (5) top is 0-
0.02 millimeter.
8. a kind of graphite plate applied to Aixtron Crius II type according to claim 1, it is characterised in that: institute
Stating the height difference setting between second step (7) top and boss (6) least significant end is 0-0.03 millimeters.
9. a kind of graphite plate applied to Aixtron Crius II type according to claim 1, it is characterised in that: institute
Stating the height difference setting between third step (8) top and second step (7) top is 0-0.03 millimeters.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820793500.9U CN208201121U (en) | 2018-05-25 | 2018-05-25 | A kind of graphite plate applied to Aixtron Crius II type |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820793500.9U CN208201121U (en) | 2018-05-25 | 2018-05-25 | A kind of graphite plate applied to Aixtron Crius II type |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208201121U true CN208201121U (en) | 2018-12-07 |
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ID=64515688
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820793500.9U Active CN208201121U (en) | 2018-05-25 | 2018-05-25 | A kind of graphite plate applied to Aixtron Crius II type |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208201121U (en) |
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2018
- 2018-05-25 CN CN201820793500.9U patent/CN208201121U/en active Active
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