CN204982131U - Heating device for be used for crius model - Google Patents
Heating device for be used for crius model Download PDFInfo
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- CN204982131U CN204982131U CN201520654760.4U CN201520654760U CN204982131U CN 204982131 U CN204982131 U CN 204982131U CN 201520654760 U CN201520654760 U CN 201520654760U CN 204982131 U CN204982131 U CN 204982131U
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Abstract
The utility model discloses a heating device for be used for crius model, including many be used for to the even transferred heat of graphite dish can the heater strip and be used for generating heat the energy and bearing the heating base of heater strip for the heater strip provides, the heater strip along heating base radial array in the heating base the upper surface and coil the interval arrangement with the graphite on heater strip upper portion, the heater strip body is laid along the circumference of heating base, and perhaps the heater strip body uses and heats the base center and be the heliciform as the spiral center and lay, the high difference of heater strip upper surface. Can directly be applied to aixtron crius I model, as the heating device of 37 mascerating machines, adopt the design of heater strip liftable, also carry on correspondingly respectively to the lift of every ring of heater strip to fixed crius I's heating device, create probably for the homogeneity of carrying the high -temperature field.
Description
Technical field
The utility model relates to LED growth equipment used technical field, especially, relates to a kind of heating unit for Crius type.
Background technology
MOCVD (Metal-OrganicChemicalVaporDeposition Metalorganic Chemical Vapor Deposition) is the source material using hydride of the organic compound of III, II race element and V, VI race element etc. as crystal growth, on graphite plate, carry out depositing operation in pyrolysis mode, grow the thin layer monocrystal material of various iii-v, II-VI group compound semiconductor and their multivariate solid solution.
The MOCVD equipment used of prior art generally comprises: the spray header be oppositely arranged, and the bottom of spray header is installed on the periphery of graphite plate.Graphite plate is provided with multiple heater strip.Spray header is used for providing reactant gases in reaction chamber, has multiple groove in graphite plate, the substrate that in each groove, corresponding placement a slice is to be deposited.The below configuration heating unit of graphite plate, to heat graphite plate.During use, graphite plate is heated intensification, can heat with thermal radiation and heat exchange pattern to substrate.When carrying out MOCVD technique, reactant gases sprays the conversion zone entered above graphite plate from spray header, substrate has certain temperature due to the thermal conduction heating of heating unit, and this temperature makes to carry out between reactant gases chemical reaction, thus at the required epitaxial material of substrate surface deposition.
What existing epitaxial device more often adopted has AixtronCrius type, now be upgraded to from 31 machines and once can have processed 37 machines that 37 diameters are 2 inch substrates, due to this equipment inherently defect, the heats of heating unit outmost turns to graphite plate is not obvious, presents the outside substrate of outmost turns and is heated uneven with the substrate being in central zone.Especially be in transition and drive substrate, because entirety is heated uneven, cause the problem that institute's growing epitaxial structural homogeneity is poor, homogeneity and the yield of chip are had a strong impact on, existing inflation method all cannot fundamentally solve owing to heating the uneven chip wavelength uniformity problem caused, add the center substrate that CriusI is intrinsic and the inconsistent problem of other position substrate growth conditions, the product yield of 37 machines is on the low side.As seen from Figure 3, in inner ring heater strip heating region, the wavelength of gained epitaxial wafer is partially short, the wavelength of centre circle corresponding heating region gained chip is comparatively even, and the wavelength of heater strip corresponding zone, outer ring gained chip with the increase of radial distance present first little after the trend that sharply increases.Same batch of products obtained therefrom wavelength is concentrated too poor, and due to each regional temperature difference of heating unit, also can cause the electrical instability of gained chip, cause the yield of chip on the low side.In order to adapt to current condition, also needing process gained chip being increased to some survey and minute selections, adding every cost of production.
Utility model content
The utility model provides a kind of heating unit for Crius type, uneven to silicon to solve existing heating unit, the technical problem that the gained chip yield caused is low.
The utility model provides a kind of heating unit for Crius type, comprise many for the heater strip to the even transferring heat energy of graphite plate and for providing the heating energy for heater strip and carrying the heated base of heater strip, heater strip along heated base radial array in the upper surface of heated base and and the graphite plate interval on heater strip top arrange; Heater strip body is laid along the circumference of heated base, or heater strip body with heated base center for spiral center is laid in the shape of a spiral; Heater strip upper level is different.
Further, highly different residing for the upper surface of same heater strip.
Further, heater strip comprises and is in inner ring heater strip in the middle part of heated base, is in the centre circle heater strip of inner ring heater strip periphery and is in the outer ring heater strip of centre circle heater strip periphery.
Further, the heater strip upper level between inner ring heater strip, centre circle heater strip and outer ring heater strip three is different.
Further, each heater strip upper level in inner ring heater strip is different; And/or each heater strip upper level difference in centre circle heater strip; And/or each heater strip upper level difference in the heater strip of outer ring.
Further, thermal baffle is provided with between inner ring heater strip and heated base; And/or be provided with thermal baffle between centre circle heater strip and heated base; And/or be provided with thermal baffle between outer ring heater strip and heated base.
Further, heater strip is 13 concentric(al) circless along the radial array of heated base, and the difference of altitude between the heater strip on 13 concentric(al) circless is respectively from the inside to the outside :-1.5mm ,-1mm ,-0.5mm ,-0.5mm, 0mm, 0mm, 0mm, 0mm, 0mm ,-0.5mm ,-0.5mm ,-0.5mm, 1.5mm.
Further, 13 concentrically ringed radiuses are respectively from the inside to the outside: 15mm, 25mm, 35mm, 45mm, 60mm, 80mm, 95mm, 110mm, 125mm, 140mm, 155mm, 165mm, 175mm.
Further, every root heater strip by encompass ring in the shape of a spiral and adjacent ring around ring near tungsten filament form, the radius of spin of tungsten filament is 3mm-6mm, and the diameter of tungsten filament is 0.5-2mm.
Further, the radius of spin of tungsten filament is 4mm, and the diameter of tungsten filament is 1mm.
The utility model has following beneficial effect:
AixtronCriusI type can be directly applied to, as the heating unit of 37 machines, adopt the liftable design of heater strip, the heating unit of fixing CriusI is also carried out corresponding respectively for the lifting of often enclosing heater strip, for the homogeneity carrying high-temperature field creates possibility.
Except object described above, feature and advantage, the utility model also has other object, feature and advantage.Below with reference to figure, the utility model is described in further detail.
Accompanying drawing explanation
The accompanying drawing forming a application's part is used to provide further understanding of the present utility model, and schematic description and description of the present utility model, for explaining the utility model, is not formed improper restriction of the present utility model.In the accompanying drawings:
Fig. 1 is the structural representation of the heating unit for Crius type of the utility model preferred embodiment;
Fig. 2 is the A-A sectional view of Fig. 1;
Fig. 3 is existing 37 machine homogeneities for the corresponding relation figure of the Wld of predominant wavelength and radial distance.
Marginal data:
1, heater strip; 101, inner ring heater strip; 102, centre circle heater strip; 103, outer ring heater strip; 2, heated base; 3, thermal baffle.
Embodiment
Below in conjunction with accompanying drawing, embodiment of the present utility model is described in detail, but the utility model can by the multitude of different ways that limits and cover implement.
Fig. 1 is the structural representation of the heating unit for Crius type of the utility model preferred embodiment; Fig. 2 is the A-A sectional view of Fig. 1.
As depicted in figs. 1 and 2, the heating unit for Crius type of the present embodiment, comprise many for the heater strip 1 to the even transferring heat energy of graphite plate and for providing the heating energy for heater strip 1 and carrying the heated base 2 of heater strip 1, heater strip 1 along heated base 2 radial array in the upper surface of heated base 2 and and the graphite plate interval on heater strip 1 top arrange; Heater strip 1 body is laid along the circumference of heated base 2, or heater strip 1 body with heated base 2 center for spiral center is laid in the shape of a spiral; Heater strip 1 upper level is different.AixtronCriusI type can be directly applied to, as the heating unit of 37 machines, adopt the liftable design of heater strip, the heating unit of fixing CriusI is also carried out corresponding respectively for the lifting of often enclosing heater strip, for the homogeneity carrying high-temperature field creates possibility." Crius type ", " CriusI type " and " CriusII type " are the noun that the industry is all known, be MOCVD supplier Aixtron (like think strong) develop for the epitaxially grown kind equipment of LED, belong to the known term of this area.The utility model belongs to the heating unit for LED growth equipment used.
As depicted in figs. 1 and 2, in the present embodiment, highly different residing for the upper surface of same heater strip 1.AixtronCriusI type can be directly applied to, as the heating unit of 37 machines, adopt the liftable design of heater strip, the heating unit of fixing CriusI is also carried out corresponding respectively for the lifting of often enclosing heater strip, for the homogeneity carrying high-temperature field creates possibility.
As depicted in figs. 1 and 2, in the present embodiment, heater strip 1 comprises and is in inner ring heater strip 101 in the middle part of heated base 2, is in the centre circle heater strip 102 of inner ring heater strip 101 periphery and is in the outer ring heater strip 103 of centre circle heater strip 102 periphery.AixtronCriusI type can be directly applied to, as the heating unit of 37 machines, adopt the liftable design of heater strip, the heating unit of fixing CriusI is also carried out corresponding respectively for the lifting of often enclosing heater strip, for the homogeneity carrying high-temperature field creates possibility.
As depicted in figs. 1 and 2, in the present embodiment, heater strip 1 upper level between inner ring heater strip 101, centre circle heater strip 102 and outer ring heater strip 103 three is different.AixtronCriusI type can be directly applied to, as the heating unit of 37 machines, adopt the liftable design of heater strip, the heating unit of fixing CriusI is also carried out corresponding respectively for the lifting of often enclosing heater strip, for the homogeneity carrying high-temperature field creates possibility.
As depicted in figs. 1 and 2, in the present embodiment, each heater strip 1 upper level in inner ring heater strip 101 is different, or each heater strip 1 upper level difference in centre circle heater strip 102, or each heater strip 1 upper level difference in outer ring heater strip 103.Alternatively, each heater strip 1 upper level in inner ring heater strip 101 is different, and each heater strip 1 upper level difference in centre circle heater strip 102; Or each heater strip 1 upper level in outer ring heater strip 103 is different.Alternatively, each heater strip 1 upper level in inner ring heater strip 101 is different, and each heater strip 1 upper level difference in outer ring heater strip 103; Or each heater strip 1 upper level in centre circle heater strip 102 is different.Alternatively, each heater strip 1 upper level in centre circle heater strip 102 is different, and each heater strip 1 upper level difference in outer ring heater strip 103; Or each heater strip 1 upper level in inner ring heater strip 101 is different.Alternatively, each heater strip 1 upper level in inner ring heater strip 101 is different; And each heater strip 1 upper level difference in centre circle heater strip 102; And each heater strip 1 upper level difference in outer ring heater strip 103.AixtronCriusI type can be directly applied to, as the heating unit of 37 machines, adopt the liftable design of heater strip, the heating unit of fixing CriusI is also carried out corresponding respectively for the lifting of often enclosing heater strip, for the homogeneity carrying high-temperature field creates possibility.Be divided into interior China and foreign countries three to enclose entirety respectively to design, the difference circle of heating unit is carried out different designs, to realize each position heating manual control, the level easily departing from more position and be withdrawn into most of position is come up, realizes the raising of whole dish homogeneity.Improve monolithic wavelength and electrical homogeneity, outer ring, centre circle and inner ring heating unit do inner adjusted design separately again respectively, solve the homogeneity question in individual pen heating unit span of control, the situation of being heated of substrate can be improved, homogeneity in the sheet of raising monolithic.
In the present embodiment, between inner ring heater strip 101 and heated base 2, be provided with thermal baffle 3; Or be provided with thermal baffle 3 between centre circle heater strip 102 and heated base 2; Or be provided with thermal baffle 3 between outer ring heater strip 103 and heated base 2.Alternatively, between inner ring heater strip 101 and heated base 2, be provided with thermal baffle 3, and be provided with thermal baffle 3 between centre circle heater strip 102 and heated base 2; Or be provided with thermal baffle 3 between outer ring heater strip 103 and heated base 2.Alternatively, between inner ring heater strip 101 and heated base 2, be provided with thermal baffle 3, and be provided with thermal baffle 3 between outer ring heater strip 103 and heated base 2; Or be provided with thermal baffle 3 between centre circle heater strip 102 and heated base 2.Alternatively, between centre circle heater strip 102 and heated base 2, be provided with thermal baffle 3, and be provided with thermal baffle 3 between outer ring heater strip 103 and heated base 2; Or be provided with thermal baffle 3 between inner ring heater strip 101 and heated base 2.Alternatively, thermal baffle 3 is provided with between inner ring heater strip 101 and heated base 2; And be provided with thermal baffle 3 between centre circle heater strip 102 and heated base 2; And be provided with thermal baffle 3 between outer ring heater strip 103 and heated base 2.
As depicted in figs. 1 and 2, in the present embodiment, heater strip 1 is 13 concentric(al) circless along the radial array of heated base 2.Difference of altitude between heater strip 1 on 13 concentric(al) circless is respectively from the inside to the outside :-1.5mm ,-1mm ,-0.5mm ,-0.5mm, 0mm, 0mm, 0mm, 0mm, 0mm ,-0.5mm ,-0.5mm ,-0.5mm, 1.5mm.
As depicted in figs. 1 and 2, in the present embodiment, 13 concentrically ringed radiuses are respectively from the inside to the outside: 15mm, 25mm, 35mm, 45mm, 60mm, 80mm, 95mm, 110mm, 125mm, 140mm, 155mm, 165mm, 175mm.
As depicted in figs. 1 and 2, in the present embodiment, every root heater strip 1 by encompass ring in the shape of a spiral and adjacent ring around ring near tungsten filament form.The radius of spin of tungsten filament is 3mm-6mm.The diameter of tungsten filament is 0.5-2mm.
As depicted in figs. 1 and 2, in the present embodiment, the radius of spin of tungsten filament is 4mm.The diameter of tungsten filament is 1mm.
During enforcement, provide a kind of heating unit being applied to CriusI type, it can solve the problem of wavelength uniformity and the chip greater homogeneity difference existed in production reality.
According to the feature of current ubiquity 37 machines, with the difference of heat-conduction coefficient in graphite in foundation air, estimation air to air heat transmission coefficient is heat conducting 0.2 times of graphite, heating unit is carried out design as follows:
Set heater strip 1 upper surface to have the distance radix of graphite plate as Amm herein, the distance of the relative graphite plate of so corresponding 13 heater strips 1 is respectively: (A-1.5) mm, (A-1) mm, (A-0.5) mm, (A-0.5) mm, Amm, Amm, Amm, Amm, Amm, (A-0.5) mm, (A-0.5) mm, (A-0.5) mm and (A+1.5) mm.
Often enclose all being made up of the tungsten filament of the radius of spin to be diameter that 4mm is closely connected be 1mm of heater strip, 13 circle heater strips of design are distributed in radius respectively and are respectively on the circle of 15mm, 25mm, 35mm, 45mm, 60mm, 80mm, 95mm, 110mm, 125mm, 140mm, 155mm, 165mm and 175mm.
By mode as above, heating unit can be good at the non-uniformity problem agreeing with the epitaxial process existed at present, in same power ratio with when passing into same electric current, to be heated minimizing by paracentral substrate portions, the substrate temperature departed from the inner ring span of control of normal range is withdrawn into in the temperature consistent level in centre circle span of control, simultaneously, outer ring heater strip height does and first reduces with radius increase the design raised afterwards, can be good at the trend of the homogeneity of agreeing with in the heater strip span of control of current outer ring, further section substrate on the low side and the distance of heater strip of being heated, strengthen the be heated substrate of higher part and the distance of heater strip, security heat levels is pulled to the level consistent with other regions and comes up the most at last, the raising of the overall homogeneity of final realization, the stability of enhancing condition and controllability, improve product homogeneity and yield.
The beneficial effects of the utility model are:
First, directly apply to AixtronCriusI type, the heating unit of 37 machines is divided into interior China and foreign countries three to enclose entirety respectively designing, the difference circle of heating unit is carried out different designs, to realize each position heating manual control, the level easily departing from more position and be withdrawn into most of position is come up, realizes the raising of whole dish homogeneity.
Second, improve monolithic wavelength and electrical homogeneity, outer ring, centre circle and inner ring heating unit do inner adjusted design separately again respectively, solve the homogeneity question in individual pen heating unit span of control, the situation of being heated of substrate can be improved, homogeneity in the sheet of raising monolithic.
3rd, the design that the heating unit using for reference CriusII type can be elevated, also carries out corresponding respectively for the lifting of often enclosing heater strip, for the homogeneity carrying high-temperature field creates possibility to the heating unit of fixing CriusI.
The foregoing is only preferred embodiment of the present utility model, be not limited to the utility model, for a person skilled in the art, the utility model can have various modifications and variations.All within spirit of the present utility model and principle, any amendment done, equivalent replacement, improvement etc., all should be included within protection domain of the present utility model.
Claims (10)
1., for a heating unit for Crius type, it is characterized in that,
Comprise many for the heater strip (1) to the even transferring heat energy of graphite plate and for providing the heating energy for heater strip (1) and carrying the heated base (2) of described heater strip (1),
Described heater strip (1) along described heated base (2) radial array in the upper surface of described heated base (2) and and the graphite plate interval on described heater strip (1) top arrange;
Described heater strip (1) body is laid along the circumference of described heated base (2), or described heater strip (1) body is that spiral center is laid in the shape of a spiral with described heated base (2) center;
Described heater strip (1) upper level is different.
2. the heating unit for Crius type according to claim 1, is characterized in that,
Highly different residing for the upper surface of same described heater strip (1).
3. the heating unit for Crius type according to claim 1, is characterized in that,
Described heater strip (1) comprise be in described heated base (2) middle part inner ring heater strip (101), be in the centre circle heater strip (102) of described inner ring heater strip (101) periphery and be in the outer ring heater strip (103) of described centre circle heater strip (102) periphery.
4. the heating unit for Crius type according to claim 3, is characterized in that,
Heater strip (1) upper level between described inner ring heater strip (101), described centre circle heater strip (102) and described outer ring heater strip (103) three is different.
5. the heating unit for Crius type according to claim 3, is characterized in that,
Each heater strip (1) upper level in described inner ring heater strip (101) is different; And/or
Each heater strip (1) upper level in described centre circle heater strip (102) is different; And/or
Each heater strip (1) upper level in described outer ring heater strip (103) is different.
6. the heating unit for Crius type according to claim 3, is characterized in that,
Thermal baffle (3) is provided with between described inner ring heater strip (101) and described heated base (2); And/or
Thermal baffle (3) is provided with between described centre circle heater strip (102) and described heated base (2); And/or
Thermal baffle (3) is provided with between described outer ring heater strip (103) and described heated base (2).
7. according to any one of claim 1 to 6 for the heating unit of Crius type, it is characterized in that,
Described heater strip (1) is 13 concentric(al) circless along the radial array of described heated base (2), and the difference of altitude between the heater strip (1) on described 13 concentric(al) circless is respectively from the inside to the outside :-1.5mm ,-1mm ,-0.5mm ,-0.5mm, 0mm, 0mm, 0mm, 0mm, 0mm ,-0.5mm ,-0.5mm ,-0.5mm, 1.5mm.
8., according to claim 7 for the heating unit of Crius type, it is characterized in that,
Described 13 concentrically ringed radiuses are respectively from the inside to the outside: 15mm, 25mm, 35mm, 45mm, 60mm, 80mm, 95mm, 110mm, 125mm, 140mm, 155mm, 165mm, 175mm.
9. according to any one of claim 1 to 6 for the heating unit of Crius type, it is characterized in that,
Heater strip (1) described in every root by encompass ring in the shape of a spiral and adjacent ring around ring near tungsten filament form, the radius of spin of tungsten filament is 3mm-6mm, and the diameter of tungsten filament is 0.5-2mm.
10., according to claim 9 for the heating unit of Crius type, it is characterized in that,
The radius of spin of tungsten filament is 4mm, and the diameter of tungsten filament is 1mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520654760.4U CN204982131U (en) | 2015-08-27 | 2015-08-27 | Heating device for be used for crius model |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201520654760.4U CN204982131U (en) | 2015-08-27 | 2015-08-27 | Heating device for be used for crius model |
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| CN204982131U true CN204982131U (en) | 2016-01-20 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106637392A (en) * | 2016-11-10 | 2017-05-10 | 中国电子科技集团公司第四十八研究所 | Uniformity-adjustable silicon epitaxial reaction equipment heating device and adjustment method thereof |
-
2015
- 2015-08-27 CN CN201520654760.4U patent/CN204982131U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106637392A (en) * | 2016-11-10 | 2017-05-10 | 中国电子科技集团公司第四十八研究所 | Uniformity-adjustable silicon epitaxial reaction equipment heating device and adjustment method thereof |
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