CN208173603U - A kind of two sides differentiation suede structure of monocrystalline silicon heterojunction solar cell - Google Patents
A kind of two sides differentiation suede structure of monocrystalline silicon heterojunction solar cell Download PDFInfo
- Publication number
- CN208173603U CN208173603U CN201820860668.7U CN201820860668U CN208173603U CN 208173603 U CN208173603 U CN 208173603U CN 201820860668 U CN201820860668 U CN 201820860668U CN 208173603 U CN208173603 U CN 208173603U
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- China
- Prior art keywords
- suede structure
- solar cell
- light
- monocrystalline silicon
- heterojunction solar
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 15
- 230000004069 differentiation Effects 0.000 title claims abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 18
- 239000010703 silicon Substances 0.000 claims abstract description 18
- 238000005215 recombination Methods 0.000 abstract description 5
- 230000006798 recombination Effects 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 235000008216 herbs Nutrition 0.000 description 5
- 238000005498 polishing Methods 0.000 description 5
- 210000002268 wool Anatomy 0.000 description 5
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000024245 cell differentiation Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Photovoltaic Devices (AREA)
Abstract
The utility model relates to a kind of two sides differentiation suede structures of monocrystalline silicon heterojunction solar cell, it is characterised in that：The side to light of silicon wafer structure is different with shady face structure, and the side to light is pyramid suede structure, and the shady face is the pyramid suede structure that burnishing surface or size are greater than side to light.It can effectively save reduction subsequent production cost, the recombination loss for taking into account back surface, short circuit current.
Description
Technical field
The utility model relates to area of solar cell, specifically a kind of two sides of monocrystalline silicon heterojunction solar cell
Differentiation suede structure.
Background technique
It is crucial to be known as next-generation extensive industrialization by photovoltaic industry for monocrystalline silicon heterojunction solar cell high conversion efficiency
One of technology.The big advantage of the one of monocrystalline silicon heterojunction solar cell is that its generating electricity on two sides characteristic is very good, is a kind of ideal double
Face solar cell.More important developing direction is to further increase its open-circuit voltage and the valuable former material of reduction in its production at present
The consumption of material.The two-sided suede structure of monocrystalline silicon piece after existing making herbs into wool is identical, but the structure causes silicon chip surface product larger, multiple
It is more serious to close loss, reduces open-circuit voltage.How open-circuit voltage and short circuit current are taken into account, is highly difficult.
Summary of the invention
The purpose of this utility model is exactly to carry out differentiation design to the suede structure on silicon wafer two sides, provide it is a kind of can be effective
Save reduce subsequent production cost, the recombination loss for taking into account back surface, short circuit current monocrystalline silicon heterojunction solar cell
Two sides differentiation suede structure.
The technical solution adopted in the utility model is：A kind of two sides differentiation flannelette of monocrystalline silicon heterojunction solar cell
Structure, it is characterised in that：The side to light of silicon wafer structure is different with shady face structure, and the side to light is pyramid suede structure,
The shady face is the pyramid suede structure that burnishing surface or size are greater than side to light.
Further, 1-3 μm of size of the side to light pyramid suede structure.
Further, 1-3 μm of size of the side to light pyramid suede structure；The shady face pyramid suede structure ruler
Very little 5-10 μm.
The utility model has the advantages that：
1, reduce the specific surface area of shady face, to reduce material utilization amount consumed by subsequent CVD and PVD deposition.
In the case where preferred polished backside, ~ 20% amorphous silicon and the dosage of TCO can be saved, thus when also saving ~ 20% technique
Between, improve production capacity.
2, reduce the specific surface area of shady face, to reduce the recombination loss of back surface, open-circuit voltage can be increased, and
A small amount of short circuit current for improving solar cell.
The side to light emphasis of the utility model silicon wafer takes the anti-reflective effect of solar cell into account, and silicon chip surface uses 1-3 μm
The suede structure of small size pyramid structure；The open-circuit voltage that the shady face emphasis of silicon wafer looks after solar cell is promoted, using 5-
10 μm of large scale pyramid polishes structure to reduce the surface area of silicon chip surface, reduces Carrier recombination probability, raising is opened
Road voltage.And the consumption of CVD sections and PVD sections of raw material can be saved in the subsequent preparation process of monocrystalline silicon heterojunction solar cell,
About 23% can at most be saved.
Detailed description of the invention
Fig. 1 is one structural schematic diagram of the utility model embodiment；
Fig. 2 is two structural schematic diagram of the utility model embodiment.
In figure：Silicon wafer 1, pyramidion suede structure 2, Great Pyramid suede structure 3, burnishing surface 4.
Specific embodiment
Below in conjunction with drawings and examples, the utility model is described in further detail.
Embodiment illustrated in fig. 1 one：A kind of two sides differentiation suede structure of monocrystalline silicon heterojunction solar cell, silicon wafer
1 side to light is different with shady face structure, and side to light is pyramidion structure 2, and shady face is Great Pyramid suede structure 3, small
1-3 μm of 2 size of pyramid suede structure；5-10 μm of 3 size of Great Pyramid suede structure.
Embodiment illustrated in fig. 2 two：A kind of two sides differentiation suede structure of monocrystalline silicon heterojunction solar cell, silicon wafer
1 side to light is different with shady face structure, and side to light is pyramidion structure 2,1-3 μm of 2 size of pyramidion suede structure；Institute
Stating shady face is burnishing surface 4.
For embodiment 2 compared with the two-sided making herbs into wool piece silicon wafer of tradition, the film source of two kinds of cell pieces is the same, is a difference in that backlight
The polishing at the back side is carried out.It has passed through the silk-screen that battery prepares subsequent amorphous silicon plated film, TCO deposition and electrode preparation at the same time
Technique.From result：The open-circuit voltage of solar cell after back polishing（Voc）, short circuit current（Isc and Jsc）, fill factor
（FF）There are promotion, the performance such as following figure with transfer efficiency：
The reason of Voc and FF are promoted be：The surface area of silicon wafer becomes smaller after polishing, and recombination rate reduces.
Short circuit current promoted the reason of be：The reflectivity of silicon chip back side improves after polishing, causes in silicon wafer interior lights the past
When surface is transmitted to back surface, silicon wafer back surface reflects so that light enters inside cell piece herein, is absorbed again.Back polishing
Piece and the comparison of two-sided making herbs into wool piece backside reflection rate are as shown below：Test1-test4 is the backside reflection rate for carrying on the back polished silicon wafer；
Baseline is the backside reflection rate of two-sided making herbs into wool piece.It can be seen that long-wave band backlight backside reflection rate compared to two-sided making herbs into wool
Piece significantly improves.
Claims (3)
1. a kind of two sides differentiation suede structure of monocrystalline silicon heterojunction solar cell, it is characterised in that：Silicon wafer structure is met
Smooth surface is different with shady face structure, and the side to light is pyramid suede structure, and the shady face is that burnishing surface or size are greater than
The pyramid suede structure of side to light.
2. a kind of two sides differentiation suede structure of monocrystalline silicon heterojunction solar cell according to claim 1, special
Sign is：1-3 μm of size of the side to light pyramid suede structure.
3. a kind of two sides differentiation suede structure of monocrystalline silicon heterojunction solar cell according to claim 1, special
Sign is：1-3 μm of size of the side to light pyramid suede structure；5-10 μm of size of the shady face pyramid suede structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820860668.7U CN208173603U (en) | 2018-06-05 | 2018-06-05 | A kind of two sides differentiation suede structure of monocrystalline silicon heterojunction solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820860668.7U CN208173603U (en) | 2018-06-05 | 2018-06-05 | A kind of two sides differentiation suede structure of monocrystalline silicon heterojunction solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208173603U true CN208173603U (en) | 2018-11-30 |
Family
ID=64364972
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820860668.7U Expired - Fee Related CN208173603U (en) | 2018-06-05 | 2018-06-05 | A kind of two sides differentiation suede structure of monocrystalline silicon heterojunction solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208173603U (en) |
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2018
- 2018-06-05 CN CN201820860668.7U patent/CN208173603U/en not_active Expired - Fee Related
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20181130 |
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| CF01 | Termination of patent right due to non-payment of annual fee |