CN208078378U - Wavelength continuously adjustable longitudinal mode semiconductor laser - Google Patents
Wavelength continuously adjustable longitudinal mode semiconductor laser Download PDFInfo
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- CN208078378U CN208078378U CN201820427426.9U CN201820427426U CN208078378U CN 208078378 U CN208078378 U CN 208078378U CN 201820427426 U CN201820427426 U CN 201820427426U CN 208078378 U CN208078378 U CN 208078378U
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
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Abstract
A kind of wavelength continuously adjustable longitudinal mode semiconductor laser.The semiconductor laser is inserted into longitudinal mode Compressed grating by electroluminescent core segment, intracavity beam shaping unit, resonance cavity segment and intracavitary and grating angle adjusts four parts of modeling output and forms.The laser can provide necessary analysis level standard sources for the application such as spectrum analysis, optical measurement, constituent analysis.The single longitudinal mode laser of the exportable arbitrary wavelength of 630~640nm ranges of longitudinal mode semiconductor laser of the wavelength continuously adjustable, longitudinal mode line width is respectively less than 300kHz, output wavelength a certain centre wavelength ± 0.5nm range continuously-tunings output in 630~640nm of selection, wavelength tuning stepping accuracy arbitrary accuracy between 0.1nm~10-5nm is optional, laser output power is more than 5mW, laser output diameter is 2 × 2mm, and two directional divergence angle of fast and slow axis is respectively less than 1.5mrad.
Description
Technical field
The utility model is related to semiconductor lasers, are specifically related to one kind and can be used for spectrum analysis, optical measurement, ingredient
The wavelength continuously adjustable longitudinal mode semiconductor laser of analysis etc..
Background technology
The single longitudinal mode laser of wavelength continuously adjustable has extensively in fields such as spectrum analysis, optical measurement, constituent analyses
General application.With the rapid development of analysis and testing technology, using tunable wave length laser light source as optical detection, spectrum analysis
And the system testings light source such as constituent analysis, carry out quantitative optical analysis and has been to be concerned by more and more people.In recent years, domestic
Becoming laser field hot spot for how to obtain the research that tunable single longitudinal mode laser exports using semiconductor laser outside
One of research topic, to which realization is stablized in the systems such as optic test and constituent analysis, durable and controllable cost mark
Quasi-optical source.
The standard laser light for largely needing single side longitudinal mode to export in various optic tests, in spectrum analysis and constituent analysis
Source, and required recently as test of quantitative analysis in the research and application of optic test analysis field more and more, it is desirable that it surveys
It tries precision and constituent analysis precision is higher and higher, require single longitudinal mode reference light source longitudinal mode line width more and more narrow thereupon, and
It is required that output wavelength precise tunable.And with the rapid development of semiconductor laser, test analysis light source is resistance to using stablizing
Semiconductor light source is even more present development trend.Single longitudinal mode laser output linewidth narrows, and output wavelength is continuously adjustable, then
Simultaneously using the electroluminescent Laser emission wick feed of semiconductor natively not overripened single longitudinal mode laser strip of light come it is a series of newly
Problem.If how line width narrows, how continuously adjustable output wavelength precision improves, and after semiconductor laser core, output is horizontal
The problems such as how mould parameter controls.Only several units both at home and abroad are developed to the research of above-mentioned problems with Related product opening
Exhibition, such as the NewFoucs companies in the U.S., Switzerland Beckham company.But all only solve the problems, such as one or two, without
It can the comprehensively solve above problem.How the single longitudinal mode laser output of wavelength continuously adjustable is realized using semiconductor laser core, together
The good transverse mode parameters of Shi Shixian have been output into the crucial problem that Recent study person is badly in need of in the optic test solved, analysis
One of, and for the rare relevant report of the research of this respect.
Utility model content
The purpose of this utility model is to provide a kind of wavelength continuously adjustable longitudinal mode semiconductor laser.The laser can
Necessary analysis level standard sources is provided for the application such as spectrum analysis, optical measurement, constituent analysis.The laser exportable 630
The single longitudinal mode laser of the arbitrary wavelength of~640nm ranges, longitudinal mode line width are respectively less than 300kHz, output wavelength selection 630~
A certain centre wavelength ± 0.5nm range continuously-tunings output in 640nm, wavelength tuning stepping accuracy is in 0.1nm~10-5nm
Between arbitrary accuracy it is optional, laser output power be more than 5mW, laser output diameter be 2 × 2mm, two directional divergence angle of fast and slow axis
Respectively less than 1.5mrad.
To achieve the above object, the technical solution of the utility model is as follows：
A kind of wavelength continuously adjustable longitudinal mode semiconductor laser, feature are by electroluminescent semiconductor light emitting core
Divide, intracavity beam shaping unit, resonance cavity segment and intracavitary are inserted into longitudinal mode Compressed grating and grating angle adjusting modeling output section
Four parts are divided to form：
The electroluminescent semiconductor light emitting core segment homogenizes the gold-plated seat of installation, plating by semiconductor luminous chip, chip temperature
Golden seat temperature control semiconductor chip, semiconductor luminous chip negative wire, semiconductor luminous chip negative wire link coated plate and
The insulating layer between installing gold-plated seat is homogenized positioned at the cathode link coated plate and chip temperature to form, the chip temperature
Degree homogenizes the upper surface close contact installation for installing the lower surface of gold-plated seat with the temperature control semiconductor chip, the temperature control
The lower surface of semiconductor chip is mounted on radiating shell bottom plate, and the temperature control semiconductor chip is connected with temperature controller；
The bottom surface of the semiconductor luminous chip is that the shine anode of core is installed tightly to the chip temperature to homogenize installation gold-plated
One end of seat upper surface, the rear end face of semiconductor luminous chip are coated with 630~640nm wave band of laser total reflection films and are known as, partly lead
Front end face plating 630~640nm wave band of laser anti-reflection films of body luminescence chip are oscillation light output end, and semiconductor luminous chip is born
Pole is linked at cathode by semiconductor luminous chip negative wire and links in coated plate, which links coated plate and pasted with insulating layer
Merge and homogenize the other end for installing gold-plated seat mounted on the chip temperature, and with the rear end of the semiconductor luminous chip
Face is a distance away；The light emitting end surface of the semiconductor luminous chip is rectangle structure；
The intracavity beam shaping unit is made of shaping cylindrical lens and shaping prism, and the shaping cylindrical lens are direct
It is glued on the front end face of the semiconductor luminous chip, the segment of a cylinder of the shaping cylindrical lens and the semiconductor light emitting
The long side of chip light emitting core rectangle end face is parallel, and the shaping prism is using the structure for only having fast axis direction to have angle, only
To fast axle reshaping, the angle of the shaping prism designs so that the compressed fast axis divergence angle of deviation and slow axis divergence phase
Together, oscillation light is with the shaping prism described in brewster angle incidence；
The rear end face of the semiconductor luminous chip, the shaping cylindrical lens, whole passed through successively forward with output oscillation light
Laser resonator is collectively formed in shape prism, compression and modeling reflecting grating, directional mirror and preceding output cavity mirror；
The intracavitary is inserted into longitudinal mode Compressed grating and adjusts modeling output par, c by longitudinal mode compression and modeling with grating angle
Reflecting grating, the output shaft of angle coarse adjustment linear motor and drive shaft, Piezoelectric Driving angle fine-tuning mechanism, angular adjustment axis and bottom
Board group is mounted on by the angular adjustment axis on the bottom plate at one end of, the reflecting grating, and the other end is hanging,
The top links of the back side centre and the Piezoelectric Driving angle fine-tuning mechanism of the reflecting grating, the Piezoelectric Driving angle accurate adjustment
The top links of the other end of mechanism and the output shaft of the angle coarse adjustment linear motor, the drive shaft of linear motor are mounted on
On bottom plate, the angular adjustment axis and backplane link point, linear motor drive shaft and backplane link point and Piezoelectric Driving angle
The endpoint on fine-tuning mechanism top forms adjustable triangular support configurations；Angle described in the drive shaft driving of the linear motor
The elongation or contraction for spending coarse adjustment linear motor output shaft, to adjust the angle of the reflecting grating, the Piezoelectric Driving angle
The compression of fine-tuning mechanism more fine adjustment and modeling grating angle are spent, the two combines highest with more accurate selection diffraction efficiency of grating
Longitudinal mode reflects, and forms centre wavelength resonant laser light.
The Piezoelectric Driving angle fine-tuning mechanism is by micro-structure mounting base, piezoelectric ceramics mounting base, piezoelectric ceramics and micro-
Deformation displacement structure movable plate is constituted, and the bottom end of the micro-structure mounting base is mounted on the top of the linear motor output shaft
End, the piezoelectric ceramics mounting base are threaded installation structure, the top of the piezoelectric ceramics mounting base and the piezoelectric ceramics
Bottom end link, be linked at the center of the micro-structure mounting base by screw thread in outside week of the piezoelectric ceramics, it is described
The top of piezoelectric ceramics be ball head structure and to be survived with the ball-and-socket type at Light deformation displacement structure movable plate one end center
Dynamic link, the periphery of the Light deformation displacement structure movable plate form the top of Light deformation structure and the mounting base by wire cutting
End link, the other end and the rear surface of the reflecting grating of the Light deformation displacement structure movable plate link.
The technique effect of the utility model is as follows：
The angle of the shaping prism designs so that the compressed fast axis divergence angle of deviation is identical as slow axis divergence.
Simultaneously because oscillation light is with brewster angle incidence so that oscillation light polarization ratio reaches P:S>300:1.
Semiconductor luminous chip front end face exports the countless longitudinal mode oscillation lights between 630~640nm, is advanced past fast axle shaping
Compression and modeling reflecting grating are reached, with the reflection angle Selection Center wavelength that grating is set, and is chosen near centre wavelength
The longitudinal mode that 300kHz line widths are compressed under optical grating diffraction effect is reflected on directional mirror, continues to be passed onwards to output cavity mirror,
A part forms laser generation in intracavitary, and another part forms single longitudinal mode laser output.Output light is the Dan Zong of line width 300kHz
Mould laser, while transverse mode exports 2 × 2mm of bore, the fast and slow axis both direction angle of divergence is respectively less than 1.5mrad.
Longitudinal mode is compressed uses high density reflective diffraction gratings with modeling reflecting grating, and grating is to passing through shaping prism deviation
The high longitudinal mode of diffraction efficiency of grating reflects in oscillation light afterwards, plays the role of longitudinal mode compression, is reflected by reflecting grating
Oscillation light encounters forward directional mirror afterwards, and the oscillation light intracavitary resonance of output cavity mirror is passed onwards to by directional mirror reflection,
And it is excited amplification and forms single longitudinal mode laser output.
Driving linear motor to export elongate axis or contraction, can the adjusting reflecting grating of big stepping rotated around adjustment axis
Change optical grating reflection angle, by adjusting reflecting grating angle, selects the highest longitudinal mode reflection of diffraction efficiency of grating, form center
Wave resonance laser.Centre wavelength changes with the elongation of linear motor with contraction, changes range in the full models of 630~640nm
It encloses, the stepping of change can minimum 0.1nm, maximum 1nm.Fixed linear motor elongation, passes through Piezoelectric Ceramic micro-displacement
The fine tuning reflecting grating reflection angle of fine structure realizes that the output wavelength of micro-stepping changes.Output wavelength is micro- with piezoelectric ceramics
Displacement structure fine adjustment reflecting grating angle and the change of micro-stepping, wavelength can within the scope of ± 0.5nm continuous tuning it is defeated
Go out, the stepping accuracy minimum 10 of continuous wavelength tuning-5nm。
Above-mentioned light path scheme, when selecting the electroluminescent semiconductor light emitting core of other wave-length coverages, such as 650~660,760~
The output of wavelength continuously adjustable single longitudinal mode equally may be implemented in 800nm, 1000~1100nm etc..
Description of the drawings
Fig. 1 is the utility model wavelength continuously adjustable longitudinal mode semiconductor laser light channel structure figure
Fig. 2 is the compression of the utility model longitudinal mode and the micro- rotational structure figure of modeling reflecting grating angle accurate adjustment
Specific implementation mode
It elaborates to the utility model below in conjunction with drawings and examples, but the utility model should not be limited with this
Protection domain.
First referring to Fig. 1, Fig. 1 is the utility model wavelength continuously adjustable longitudinal mode semiconductor laser light channel structure
Figure, as seen from the figure, the utility model wavelength continuously adjustable longitudinal mode semiconductor laser, by electroluminescent core segment, intracavitary
Beam shaping part, resonance cavity segment and intracavitary are inserted into longitudinal mode Compressed grating and grating angle adjusts four portions of modeling output par, c
It is grouped as.
For the electroluminescent semiconductor light emitting core segment by semiconductor luminous chip 07, chip temperature homogenizes the gold-plated seat of installation
03, gold-plated seat temperature control semiconductor chip TEC04, semiconductor luminous chip negative wire 05, the link of semiconductor luminous chip cathode
Coated plate 01 and cathode link coated plate 01 and chip temperature homogenize the insulating layer 02 between installing gold-plated seat 03 and form.Core
Piece temperature homogenizes gold-plated 03 lower surface of seat of installation and is in close contact with the upper surfaces temperature control semiconductor chip TEC04, temperature control semiconductor core
The lower surface of piece TEC04 is mounted on radiating shell bottom plate, when laser work by temperature controller driving TEC04 work, is made
Chip temperature homogenizes gold-plated 03 bulk temperature of the seat control of installation in 07 16.5 DEG C of operating temperature point of semiconductor luminous chip.Partly lead
Body luminescence chip 07 can be electric to the semiconductor laser chip for inspiring 630~640nm wave band spectral lines after choosing doping, and shine section
For 1 × 50 μm of rectangle, width is 5 μm, and maximum excitation output power is more than 500mW.50 μm of long side bottom surfaces of chip 07
It is that the shine anode of core is installed tightly to chip temperature and homogenizes the gold-plated 03 upper surface one end of seat of installation, semiconductor luminous chip 07
Rear end face is coated with 630~640nm wave band of laser total reflection films and forms resonant cavity back reflection Cavity surface 06, and reflectivity is more than 99.8%,
It is oscillation light output end that 07 front end face of chip, which plates 630~640nm wave band of laser anti-reflection films, and anti-reflection film transmitance is more than 99.8%.
The cathode of semiconductor luminous chip 07 by lead 05 be linked at cathode link coated plate 01 on, cathode link coated plate 01 with absolutely
Edge layer 02, which is bonded, to be simultaneously mounted on chip temperature and homogenizes the other end for installing gold-plated seat 03, and with semiconductor luminous chip rear end face 06
At a distance of 2mm.
The section rectangle structure that shines of semiconductor light emitting core 07 causes to emit oscillation light there are the output characteristics of fast and slow axis, leads to
It crosses intracavity beam shaping unit and realizes fast axle output compression so that whole oscillation lights are compressed in effective resonance passage.Intracavitary light
Beam shaping unit is made of shaping cylindrical lens 08 and shaping prism 09, and shaping cylindrical lens 08 are directly glued to be mounted on semiconductor light emitting
On the front end face that core 07 emits, the busbar of cylindrical mirror 08 is parallel with the long side of 07 rectangle end face of luminous core, plays Fast Compression
The effect of fast axle output light, shaping cylindrical lens 08 are using a diameter of 50 μm of silica fibre.It is had compressed by cylindrical mirror 08
The oscillation light of fast axle is forward on brewster angle incidence to the inclined-plane of shaping prism 09, and by shaping prism 09, shaping is simultaneously again
Deviation exports, and forms the equal oscillation light of the fast and slow axis angle of divergence.Shaping prism 09 is using the knot only with 30 ° of angles of fast axis direction
Structure is identical as slow axis divergence by the compressed fast axis divergence angle of 09 deviation of shaping prism only to fast axle shaping again.Shaping
Prism 09 oscillation light by front and rear surfaces plate the anti-reflection films of 630~640nm wave bands, transmitance is all higher than 99.8%.By
In oscillation light be with brewster angle incidence so that oscillation light polarization ratio reaches P:S>300:1.
07 rear end face 06 of semiconductor luminous chip, the compression passed through successively forward with output oscillation light and modeling reflecting grating
11, laser resonator is collectively formed in directional mirror 16 and preceding output cavity mirror 17.In semiconductor light emitting core 07 and compression and modeling
Between reflecting grating 11, also inserted with intracavity beam shaping cylindrical mirror 08 above-mentioned and shaping prism 09.Semiconductor luminous chip
07 front end face export 630~640nm between countless longitudinal mode oscillation lights, with grating set reflection angle Selection Center wavelength,
The centre wavelength usually selected in 630~640nm wave bands is 632.8nm and 635nm.Optical grating diffraction is chosen near centre wavelength
Under effect, it is compressed in the longitudinal mode of 300kHz line widths, is reflected on directional mirror 16 through overcompression and modeling reflecting grating 11, after
The continuous output cavity mirror 17 that is passed onwards to forms single longitudinal mode laser output.The plating of 16 reflecting surface pair 630~640nm wave bands of directional mirror is complete
Reflectance coating, reflectivity are more than 99.8%, and directional angle is and incident oscillation light angle at 45 °.The inner surface of output cavity mirror 17
630~640nm wave bands 92% are reflected in plating, and 630~640nm waves are plated in the outer surface of the 8% output cavity film penetrated, output cavity mirror 17
Section anti-reflection film, transmitance are more than 99.8%.
Intracavitary is inserted into longitudinal mode Compressed grating and adjusts modeling output par, c by longitudinal mode compression and modeling reflected light with grating angle
Grid 11, angle coarse adjustment linear motor include output shaft 13, drive shaft 14, Piezoelectric Driving angle fine-tuning mechanism 12, angular adjustment axis
10 and mounting base 15 form.
Longitudinal mode is compressed uses high density reflective diffraction gratings, diffraction efficiency of grating and angle of reflection with modeling reflecting grating 11
The degree highest longitudinal mode of associated diffraction efficiency is reflected as the laser of resonance amplification, other longitudinal modes are attenuated.To specific reflection angle
The longitudinal mode that diffraction efficiency highest under degree is reflected becomes selected centre wavelength, and grating is 2400 pairs of line gratings, and selected is vertical
Loft is wide most narrow for 300kHZ.Oscillation light becomes resonant laser light and encounters directional mirror forward after the reflection of reflecting grating 11
16, resonant laser light reaches output cavity mirror 17 before being reflected to, and resonance is excited amplification and forms single longitudinal mode laser output.Longitudinal mode compresses
It is mounted on bottom plate 15 by angular adjustment axis 10 with one end of modeling reflecting grating 11, the other end is hanging, centre position and pressure
12 top links of electric drive angle fine-tuning mechanism.12 other end of Piezoelectric Driving angle fine-tuning mechanism and angle coarse adjustment linear motor
13 top links of output shaft, linear motor drive shaft 14 are mounted on bottom plate 15.Adjustment axis 10, linear motor drive shaft 14 and bottom
15 linking point of plate and 12 top endpoint of Piezoelectric Driving angle fine-tuning mechanism form adjustable triangular support configurations.Drive straight-line electric
Machine makes output shaft 13 extend or shrink, can the adjusting reflecting grating 11 of big stepping change angle of reflection around moving axis rotation is adjusted
Degree, matching diffraction efficiency carry out Selection Center wavelength.Driving linear motor so that 13 maximal tensility of output shaft is 1.5mm, stepping
Precision can be adjustable in 0.01~0.1mm.Centre wavelength can extend with linear motor output shaft 13 and shrink change, change
Become range in 630~640nm gamuts, the stepping that centre wavelength changes can minimum 0.1nm, maximum 1nm.Fixed linear motor
The elongation of output shaft 13, by Piezoelectric Ceramic micro-displacement structure 12,11 reflection angle of fine adjustment grating realizes micro-stepping
Into output wavelength change.The details of Piezoelectric Driving angle fine-tuning mechanism 12 is shown in Fig. 2.Output wavelength is with Piezoelectric Ceramic microbit
It moves structure 12 to adjust the precise angle of reflecting grating 11, realizes that wavelength is exported in ± 0.5nm range continuous tunings, continuous wavelength
10-5nm can be achieved in the stepping accuracy minimum of tuning.Linear motor 13,14 and Piezoelectric Driving angle fine-tuning machine are driven by adjusting
Structure 12 adjusts the angle of reflecting grating 11, thus it is possible to vary the diffraction efficiency of grating 11 realizes output single longitudinal mode laser wavelength hair
Raw continuous change, wavelength continuously adjustable.
Fig. 2 is compressed for the utility model longitudinal mode and the micro- rotational structure of modeling reflecting grating angle accurate adjustment, Piezoelectric Driving in Fig. 2
Angle fine-tuning mechanism 12 is by micro-structure mounting base 121, piezoelectric ceramics mounting base 122, piezoelectric ceramics 123 and Light deformation displacement structure
Movable plate 124 forms.121 low side of micro-structure mounting base is mounted on the top of linear motor output shaft 13.Piezoelectric ceramics mounting base
122 be threaded installation structure, and top and 123 bottom end of piezoelectric ceramics of piezoelectric ceramics mounting base 122 link, outside piezoelectric ceramics 12
Side is linked at the center of the micro-structure mounting base 121 by screw thread.The top of piezoelectric ceramics 123 be ball head structure be slightly variable
The ball-and-socket contact free in 124 one end centre of shape displacement structure movable plate.The other end of Light deformation displacement structure movable plate 124
It is linked with the rear surface of reflecting grating 11, the periphery of the piezoelectric ceramics 123 forms the link of Light deformation structure by wire cutting
On the top of micro-structure mounting base 121.
Claims (2)
1. a kind of wavelength continuously adjustable longitudinal mode semiconductor laser, it is characterised in that by electroluminescent semiconductor light emitting core segment,
Intracavity beam shaping unit, resonance cavity segment and intracavitary are inserted into longitudinal mode Compressed grating and grating angle adjusts modeling output par, c four
A part composition：
The electroluminescent semiconductor light emitting core segment homogenizes the gold-plated seat of installation by semiconductor luminous chip (07), chip temperature
(03), gold-plated seat temperature control semiconductor chip (04), semiconductor luminous chip negative wire (05), semiconductor luminous chip cathode chain
Connect coated plate (01) and between the cathode link coated plate (01) and chip temperature homogenize the gold-plated seat (03) of installation
Insulating layer (02) forms, and the chip temperature homogenizes the lower surface for installing gold-plated seat (03) and the temperature control semiconductor chip
(04) upper surface is in close contact installation, and the lower surface of the temperature control semiconductor chip (04) is mounted on radiating shell bottom plate
On, the temperature control semiconductor chip (04) is connected with temperature controller；The bottom surface of the semiconductor luminous chip (07) is
The anode of luminous core is installed tightly to the chip temperature and homogenizes the one end for installing gold-plated seat (03) upper surface, semiconductor light emitting
The rear end face (06) of chip (07) is coated with 630~640nm wave band of laser total reflection films and is known as, before semiconductor luminous chip (07)
It is oscillation light output end that 630~640nm wave band of laser anti-reflection films are plated in end face, and the cathode of semiconductor luminous chip (07) is by partly leading
Body luminescence chip negative wire (05) is linked in cathode link coated plate (01), which links coated plate (01) and insulating layer
(02) fitting and homogenize the other end for installing gold-plated seat (03) mounted on the chip temperature, and with the semiconductor light emitting
The rear end face (06) of chip (07) is a distance away；The light emitting end surface of the semiconductor luminous chip (07) is rectangle knot
Structure；
The intracavity beam shaping unit is made of shaping cylindrical lens (08) and shaping prism (09), the shaping cylindrical lens
(08) be directly glued on the front end face of the semiconductor luminous chip (07), the segment of a cylinder of the shaping cylindrical lens (08) with
The long side of the luminous core rectangle end face of the semiconductor luminous chip (07) is parallel, and the shaping prism (09), which uses, to be only had
Fast axis direction has the structure of angle, and only to fast axle reshaping, the angle of the shaping prism designs so that deviation is compressed
Fast axis divergence angle is identical as slow axis divergence, and oscillation light is with the shaping prism (09) described in brewster angle incidence；
The rear end face (06) of the semiconductor luminous chip, the shaping cylindrical lens passed through successively forward with output oscillation light
(08), shaping prism (09), compression and modeling reflecting grating (11), directional mirror (16) and preceding output cavity mirror (17) common shape
At laser resonator；
The intracavitary is inserted into longitudinal mode Compressed grating and adjusts modeling output par, c with grating angle and compressed by longitudinal mode to reflect with modeling
Grating (11), the output shaft (13) of angle coarse adjustment linear motor and drive shaft (14), Piezoelectric Driving angle fine-tuning mechanism (12), angle
Adjustment axis (10) and bottom plate (15) composition are spent, one end of the reflecting grating (11) is pacified by the angular adjustment axis (10)
On the bottom plate (15), the other end is hanging, back side centre and the Piezoelectric Driving angle of the reflecting grating (11)
The top links of fine-tuning mechanism (12), the other end of the Piezoelectric Driving angle fine-tuning mechanism (12) and the angle coarse adjustment straight line
The drive shaft (14) of the top links of the output shaft (13) of motor, linear motor is mounted on bottom plate (15), the angle tune
Nodal axisn (10) and backplane link point, linear motor drive shaft (14) and backplane link point and Piezoelectric Driving angle fine-tuning mechanism (12)
The endpoint on top forms adjustable triangular support configurations；The angle that drive shaft (14) driving of the linear motor is described is thick
The elongation or contraction of straightening line motor output shaft (13), to adjust the angle of the reflecting grating (11), the piezoelectricity drives
Dynamic angle fine-tuning mechanism (12) more fine adjustment compression and modeling grating angle, the two is combined is imitated with more accurate selection optical grating diffraction
The highest longitudinal mode reflection of rate, forms centre wavelength resonant laser light.
2. wavelength continuously adjustable longitudinal mode semiconductor laser according to claim 1, it is characterised in that the pressure
Electric drive angle fine-tuning mechanism (12) by micro-structure mounting base (121), piezoelectric ceramics mounting base (122), piezoelectric ceramics (123) and
Light deformation displacement structure movable plate (124) is constituted, and the bottom end of the micro-structure mounting base (121) is mounted on the straight-line electric
The top of machine output shaft (13), the piezoelectric ceramics mounting base (122) are threaded installation structure, the piezoelectric ceramics mounting base
(122) top is linked with described piezoelectric ceramics (123) bottom end, and the outside week of the piezoelectric ceramics (123) passes through screw thread
Be linked at the center of the micro-structure mounting base (121), the top of the piezoelectric ceramics (123) for ball head structure and with institute
The ball-and-socket type at Light deformation displacement structure movable plate (124) one end center stated is at active link, Light deformation displacement structure movement
The periphery of plate (124) forms the top links of Light deformation structure and the mounting base 121, the Light deformation by wire cutting
The other end of displacement structure movable plate (124) and the rear surface of the reflecting grating (11) link.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820427426.9U CN208078378U (en) | 2018-03-28 | 2018-03-28 | Wavelength continuously adjustable longitudinal mode semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820427426.9U CN208078378U (en) | 2018-03-28 | 2018-03-28 | Wavelength continuously adjustable longitudinal mode semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208078378U true CN208078378U (en) | 2018-11-09 |
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ID=64042101
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820427426.9U Withdrawn - After Issue CN208078378U (en) | 2018-03-28 | 2018-03-28 | Wavelength continuously adjustable longitudinal mode semiconductor laser |
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| Country | Link |
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| CN (1) | CN208078378U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108400520A (en) * | 2018-03-28 | 2018-08-14 | 赵智亮 | Wavelength continuously adjustable longitudinal mode semiconductor laser |
-
2018
- 2018-03-28 CN CN201820427426.9U patent/CN208078378U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108400520A (en) * | 2018-03-28 | 2018-08-14 | 赵智亮 | Wavelength continuously adjustable longitudinal mode semiconductor laser |
| CN108400520B (en) * | 2018-03-28 | 2024-04-09 | 赵智亮 | Wavelength Continuously Tunable Single Longitudinal Mode Semiconductor Laser |
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