CN108400520B - Wavelength Continuously Tunable Single Longitudinal Mode Semiconductor Laser - Google Patents
Wavelength Continuously Tunable Single Longitudinal Mode Semiconductor Laser Download PDFInfo
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
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- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
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- H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
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Abstract
A wavelength continuously tunable single longitudinal mode semiconductor laser. The semiconductor laser consists of an electroluminescent core part, an intracavity beam shaping part, a resonant cavity part, an intracavity longitudinal compression grating and a grating angle adjustment mode selection output four parts. The laser can provide a necessary analytical grade standard light source for applications such as spectroscopic analysis, optical measurement, component analysis and the like. The single longitudinal mode semiconductor laser with continuously tunable wavelength can output single longitudinal mode laser with any wavelength in 630-640 nm range, the longitudinal mode linewidth is smaller than 300kHz, the output wavelength can be continuously tuned and output in a certain central wavelength + -0.5 nm range within the selected 630-640 nm range, the wavelength tuning stepping precision is selectable in any precision between 0.1nm and 10-5nm, the laser output power is larger than 5mW, the laser output caliber is 2X 2mm, and the divergence angles of the fast axis and the slow axis in two directions are smaller than 1.5mrad.
Description
Technical Field
The invention relates to a semiconductor laser, in particular to a single longitudinal mode semiconductor laser with continuously tunable wavelength, which can be used for spectrum analysis, optical measurement, component analysis and the like.
Background
The single longitudinal mode laser with continuously tunable wavelength has wide application in the fields of spectrum analysis, optical measurement, component analysis and the like. With the rapid development of analysis and test technology, the adoption of a wavelength-tunable laser light source as a system test light source for optical detection, spectrum analysis, component analysis and the like, the development of quantitative optical analysis is receiving more and more attention. In recent years, research on how to obtain tunable single longitudinal mode laser output by using semiconductor laser at home and abroad is becoming one of hot research subjects in the laser field, so as to realize stable, durable and cost-controllable standard light sources in optical testing, component analysis and other systems.
In various optical tests, spectrum analysis and component analysis, a large number of standard laser sources with single-sided longitudinal mode output are required, and in recent years, along with more and more requirements of quantitative analysis tests in the research and application fields of optical test analysis, the test precision and component analysis precision are required to be higher and higher, the longitudinal mode line width of a single-longitudinal mode reference light source is required to be narrower and narrower, and the output wavelength is required to be precisely tunable. And with the rapid development of semiconductor lasers, the test analysis light source adopts a stable and durable semiconductor light source, which is a more current development trend. The single longitudinal mode laser has narrowed output line width and continuously adjustable output wavelength, and simultaneously adopts a semiconductor electro-laser emitting core to bring a series of new problems to the single longitudinal mode laser source which is not mature. If the line width is narrowed, the precision of the continuously tunable output wavelength is improved, and after the semiconductor laser core is adopted, the parameters of the output transverse mode are controlled. The research on the problems and the development of related products are carried out at home and abroad only by several units, such as NewFoucs company in the united states, bechamm company in switzerland, and the like. But only solves one or two problems, and cannot fully solve the problems. How to use semiconductor laser core to realize single longitudinal mode laser output with continuously tunable wavelength and to realize good transverse mode parameter output becomes one of the key problems in optical test and analysis which needs to be solved by researchers in recent years, and researches on the problem are rarely reported.
Disclosure of Invention
The invention aims to provide a single longitudinal mode semiconductor laser with continuously tunable wavelength. The laser can provide a necessary analytical grade standard light source for applications such as spectroscopic analysis, optical measurement, component analysis, and the like. The laser can output single longitudinal mode laser with any wavelength in 630-640 nm, the longitudinal mode linewidth is smaller than 300kHz, the output wavelength can be continuously tuned and output in a certain central wavelength +/-0.5 nm range in 630-640 nm, the wavelength tuning stepping precision is optional in any precision between 0.1nm and 10-5nm, the laser output power is larger than 5mW, the laser output caliber is 2 multiplied by 2mm, and the divergence angles of the fast axis and the slow axis are smaller than 1.5mrad.
In order to achieve the above object, the technical solution of the present invention is as follows:
the wavelength continuously tunable single longitudinal mode semiconductor laser is characterized by comprising an electroluminescent semiconductor luminous core part, an intracavity beam shaping part, a resonant cavity part, an intracavity longitudinal compression grating and a grating angle adjustment mode selection output part:
the temperature control semiconductor chip is arranged on the bottom plate of the heat dissipation shell, and is connected with the temperature controller; the bottom surface of the semiconductor light-emitting chip, namely the positive electrode of the light-emitting chip, is tightly arranged at one end of the upper surface of the chip temperature homogenization mounting gold-plated seat, the rear end surface of the semiconductor light-emitting chip is plated with a 630-640 nm wave band laser total reflection film, namely the front end surface of the semiconductor light-emitting chip is plated with a 630-640 nm wave band laser projection film to be an oscillation light output end, the negative electrode of the semiconductor light-emitting chip is linked on a negative electrode linking gold-plated plate through a lead negative electrode, and the negative electrode linking gold-plated plate is attached to an insulating layer and is arranged at the other end of the chip temperature homogenization mounting gold-plated seat and is separated from the rear end surface of the semiconductor light-emitting chip by a certain distance; the luminous end face of the semiconductor luminous chip is of a rectangular structure;
the beam shaping part in the cavity consists of a shaping cylindrical lens and a shaping prism, the shaping cylindrical lens is directly glued on the front end face of the semiconductor light-emitting chip, a cylindrical surface generatrix of the shaping cylindrical lens is parallel to the long side of the rectangular end face of the semiconductor light-emitting chip light-emitting core, the shaping prism adopts a structure with an included angle only in the fast axis direction, only the fast axis is reshaped, the included angle of the shaping prism is designed to enable the fast axis divergence angle after deflection compression to be the same as the slow axis divergence angle, and oscillation light enters the shaping prism at Brewster angle;
the rear end surface of the semiconductor light-emitting chip, a shaping cylindrical mirror, a shaping prism, a compression and mode selection reflection grating, a directional reflector and a front output cavity mirror which sequentially pass through the output oscillating light forwards form a laser resonant cavity;
the device comprises a cavity, a longitudinal compression grating and grating angle adjustment mode selection output part, a piezoelectric driving angle fine adjustment mechanism, an angle adjustment shaft and a bottom plate, wherein the cavity is internally provided with a longitudinal compression and mode selection reflection grating, an output shaft and a driving shaft of an angle coarse adjustment linear motor, one end of the reflection grating is arranged on the bottom plate through the angle adjustment shaft, the other end of the reflection grating is suspended, the middle of the back of the reflection grating is connected with the top end of the piezoelectric driving angle fine adjustment mechanism, the other end of the piezoelectric driving angle fine adjustment mechanism is connected with the top end of the output shaft of the angle coarse adjustment linear motor, the driving end of the linear motor is arranged on the bottom plate, and an adjustable triangular support structure is formed by the connecting point of the angle adjustment shaft and the bottom plate, the connecting point of the driving end of the linear motor and the bottom plate and the end point of the top end of the piezoelectric driving angle fine adjustment mechanism; the driving end of the linear motor drives the angle coarse adjustment linear motor to extend or retract an output shaft of the linear motor so as to adjust the angle of the reflection grating, the piezoelectric driving angle fine adjustment mechanism is used for more precisely adjusting the angle of the compression and mode selection grating, and the piezoelectric driving angle fine adjustment mechanism and the mode selection grating are combined to more precisely select the longitudinal mode reflection with highest diffraction efficiency of the grating so as to form the resonant laser with the central wavelength.
The piezoelectric driving angle fine adjustment mechanism is composed of a microstructure installation seat, a piezoelectric ceramic installation seat, piezoelectric ceramic and a micro-deformation displacement structure moving plate, wherein the bottom end of the microstructure installation seat is installed at the top end of an output shaft of the linear motor, the piezoelectric ceramic installation seat is of a threaded installation structure, the top end of the piezoelectric ceramic installation seat is connected with the bottom end of the piezoelectric ceramic, the outer periphery of the piezoelectric ceramic is connected with the center of the microstructure installation seat through threads, the top end of the piezoelectric ceramic is of a ball head structure and is in movable connection with a ball socket in the center of one end of the micro-deformation displacement structure moving plate, the periphery of the micro-deformation displacement structure moving plate is connected with the top end of the installation seat through linear cutting, and the other end of the micro-deformation displacement structure moving plate is connected with the rear surface of the reflection grating.
The invention has the following technical effects:
the included angle of the shaping prism is designed to enable the fast axis divergence angle after deflection compression to be the same as the slow axis divergence angle. Meanwhile, as the oscillating light is incident at the Brewster angle, the polarization ratio of the oscillating light reaches P:S >300:1.
The front end face of the semiconductor light-emitting chip outputs countless longitudinal mode oscillation light between 630 nm and 640nm, the countless longitudinal mode oscillation light forwards passes through a fast axis shaping to reach a compression and mode selection reflection grating, the central wavelength is selected according to the reflection angle set by the grating, the longitudinal mode compressed at the line width of 300kHz under the diffraction effect of the selected grating near the central wavelength is reflected to a directional reflector, the longitudinal mode continues to forwards reach an output cavity mirror, one part of the longitudinal mode oscillation light forms laser oscillation in the cavity, and the other part of the longitudinal mode oscillation light forms single longitudinal mode laser output. The output light is single longitudinal mode laser with a linewidth of 300kHz, and meanwhile, the transverse mode output caliber is 2X 2mm, and the divergence angles of the fast axis and the slow axis in two directions are smaller than 1.5mrad.
The longitudinal mode compression and mode selection reflection grating adopts a high-density reflection diffraction grating, the grating reflects a longitudinal mode with high grating diffraction efficiency in the oscillation light deflected by the shaping prism, the longitudinal mode compression function is achieved, the oscillation light reflected by the reflection grating forwards encounters the directional reflector, the oscillation light forwards reaches the oscillation light cavity of the output cavity mirror to resonate, and the oscillation light is stimulated to amplify to form single longitudinal mode laser output.
The linear motor is driven to enable the output shaft to extend or shrink, the reflection grating can be adjusted in a large stepping mode to rotate around the adjusting shaft to change the reflection angle of the grating, and the longitudinal mode reflection with highest diffraction efficiency of the grating is selected through adjusting the angle of the reflection grating to form the resonant laser with the central wavelength. The central wavelength is changed along with the extension and contraction of the linear motor, the changing range is 630-640 nm, and the changing step can be 0.1nm at the minimum and 1nm at the maximum. The elongation of the linear motor is fixed, and the micro-stepping output wavelength change is realized by driving the reflection angle of the micro-displacement structure to finely adjust the reflection angle of the reflection grating through piezoelectric ceramics. The output wavelength is changed in micro-steps along with the precise adjustment of the angle of the reflection grating by the piezoelectric ceramic micro-displacement structure, the wavelength can be continuously tuned and output within the range of +/-0.5 nm, and the stepping precision of continuous wavelength tuning is minimum by 10 percent -5 nm。
According to the optical path scheme, when the electroluminescent semiconductor luminous core in other wavelength ranges is selected, the wavelength can be continuously tunable single longitudinal mode output like 650-660, 760-800 nm, 1000-1100 nm and the like.
Drawings
FIG. 1 is a schematic diagram of an optical path of a single longitudinal mode semiconductor laser with continuously tunable wavelength according to the present invention
FIG. 2 is a diagram showing a fine angle adjustment micro-rotation structure of a longitudinal mode compression and mode selection reflection grating according to the present invention
Detailed Description
The present invention will be described in detail below with reference to the drawings and examples, but should not be construed as limiting the scope of the invention.
Referring to fig. 1, fig. 1 is a schematic diagram of an optical path of a wavelength continuously tunable single longitudinal mode semiconductor laser according to the present invention, and it can be seen that the wavelength continuously tunable single longitudinal mode semiconductor laser according to the present invention comprises an electroluminescent core portion, an intra-cavity beam shaping portion, a resonant cavity portion, an intra-cavity longitudinal compression grating, and a grating angle adjustment mode selection output portion.
The electroluminescent semiconductor luminous core part consists of a semiconductor luminous chip 07, a chip temperature homogenization mounting gold-plating seat 03, a gold-plating seat temperature control semiconductor chip TEC04, a semiconductor luminous chip negative electrode lead 05, a semiconductor luminous chip negative electrode link gold-plating plate 01 and an insulating layer 02 between the negative electrode link gold-plating plate 01 and the chip temperature homogenization mounting gold-plating seat 03. The lower surface of the chip temperature homogenizing gold-plating base 03 is tightly contacted with the upper surface of the temperature-control semiconductor chip TEC04, the lower surface of the temperature-control semiconductor chip TEC04 is arranged on the bottom plate of the heat dissipation shell, and when laser works, the temperature controller drives the TEC04 to work, so that the whole temperature of the chip temperature homogenizing gold-plating base 03 is controlled at the working temperature point 16.5 ℃ of the semiconductor light-emitting chip 07. The semiconductor light emitting chip 07 is a semiconductor laser chip which can be electrically excited to a spectral line of 630-640 nm after doping, the light emitting section is a rectangle with the size of 1 multiplied by 50 mu m, the width is 5 mu m, and the maximum excitation output power is more than 500mW. The bottom surface of the 50 μm long side of the chip 07 is also the positive pole of the luminous core which is tightly arranged at one end of the upper surface of the chip temperature homogenizing gold-plated seat 03, the rear end surface of the semiconductor luminous chip 07 is plated with a 630-640 nm wave band laser total reflection film to form a resonant cavity rear reflection cavity surface 06, the reflectivity is more than 99.8%, the front end surface of the chip 07 is plated with a 630-640 nm wave band laser antireflection film which is an oscillation light output end, and the transmittance of the antireflection film is more than 99.8%. The negative electrode of the semiconductor light emitting chip 07 is linked to the negative electrode linking gold plating plate 01 through the lead 05, and the negative electrode linking gold plating plate 01 is attached to the insulating layer 02 and mounted on the other end of the chip temperature homogenizing mounting gold plating base 03 and is spaced 2mm from the rear end face 06 of the semiconductor light emitting chip.
The rectangular structure of the light-emitting section of the semiconductor light-emitting core 07 causes the emitted oscillation light to have the output characteristic of a fast axis and a slow axis, and the fast axis output compression is realized through the beam shaping part in the cavity, so that all the oscillation light is compressed on the effective resonant channel. The beam shaping part in the cavity consists of a shaping cylindrical lens 08 and a shaping prism 09, wherein the shaping cylindrical lens 08 is directly glued and installed on the front end face emitted by the semiconductor luminous core 07, the bus of the cylindrical lens 08 is parallel to the long side of the rectangular end face of the luminous core 07, the effect of rapidly compressing the output light of a fast axis is achieved, and the shaping cylindrical lens 08 adopts quartz optical fibers with the diameter of 50 mu m. The oscillation light compressed by the cylindrical mirror 08 and having the fast axis is incident on the inclined plane of the shaping prism 09 at the brewster angle, is shaped again by the shaping prism 09 and is deflected and output, so as to form the oscillation light with the same divergence angle of the fast axis and the slow axis. The shaping prism 09 adopts a structure with an included angle of 30 degrees in the fast axis direction, and only the fast axis is shaped again, and the fast axis divergence angle after deflection compression of the shaping prism 09 is the same as the slow axis divergence angle. The front and back surfaces of the shaping prism 09 through which the oscillation light passes are plated with antireflection films of 630-640 nm wave bands, and the transmittance is more than 99.8%. Since the oscillation light is incident at Brewster angle, the polarization ratio of the oscillation light reaches P:S >300:1.
The rear end face 06 of the semiconductor light emitting chip 07 forms a laser resonator together with the compression and mode selection reflection grating 11, the directional mirror 16 and the front output cavity mirror 17 through which the output oscillation light passes forward in order. The aforementioned intracavity beam shaping cylindrical mirror 08 and shaping prism 09 are also interposed between the semiconductor light emitting core 07 and the compression and mode selection reflection grating 11. The front end face of the semiconductor light emitting chip 07 outputs countless longitudinal mode oscillation light between 630-640 nm, the central wavelength is selected according to the reflection angle set by the grating, and the central wavelength selected in the wave band between 630-640 nm is 632.8nm and 635nm. Under the diffraction effect of the selected grating near the center wavelength, the longitudinal mode with the line width of 300kHz is compressed, reflected to the directional reflector 16 by the compressed and mode-selected reflection grating 11, and continuously reaches the output cavity mirror 17 forward to form single longitudinal mode laser output. The reflection surface of the directional reflector 16 is coated with a total reflection film at the wave band of 630-640 nm, the reflectivity is more than 99.8%, and the directional angle is an included angle of 45 degrees with the incident oscillating light. The inner surface of the output cavity mirror 17 is plated with an output cavity film which is reflective for 92% of 630-640 nm wave band and is 8% of transmission, and the outer surface of the output cavity mirror 17 is plated with an antireflection film for 630-640 nm wave band, and the transmission rate is more than 99.8%.
The output part for the angle adjustment and selection of the intra-cavity longitudinal mode compression grating and the grating consists of a longitudinal mode compression and selection reflection grating 11, an angle rough adjustment linear motor which comprises an output shaft 13, a driving shaft 14, a piezoelectric driving angle fine adjustment mechanism 12, an angle adjustment shaft 10 and a mounting bottom plate 15.
The longitudinal mode compression and mode selection reflection grating 11 adopts a high-density reflection diffraction grating, and the longitudinal mode with highest diffraction efficiency related to the diffraction efficiency and reflection angle of the grating is reflected to become laser with resonance amplification, and other longitudinal modes are attenuated. The highest diffraction efficiency of the reflected longitudinal mode at a specific reflection angle is the selected center wavelength, the grating is 2400-line grating, and the selected longitudinal mode line width is 300kHZ at the most. The oscillation light becomes resonance laser light after being reflected by the reflection grating 11 and forwards encounters the directional mirror 16, the resonance laser light is reflected forwards to the output cavity mirror 17, and the resonance laser light is excited and amplified to form single longitudinal mode laser light output. One end of the longitudinal mode compression and mode selection reflection grating 11 is arranged on the bottom plate 15 through the angle adjusting shaft 10, the other end is suspended, and the middle position is connected with the top end of the piezoelectric driving angle fine adjusting mechanism 12. The other end of the piezoelectric driving angle fine adjustment mechanism 12 is connected with the top end of an angle coarse adjustment linear motor output shaft 13, and a linear motor driving end 14 is arranged on a bottom plate 15. The adjustable triangular support structure is formed by the linkage points of the adjusting shaft 10, the linear motor driving end 14 and the bottom plate 15 and the top end point of the piezoelectric driving angle fine adjustment mechanism 12. The linear motor is driven to enable the output shaft 13 to extend or shrink, the reflection grating 11 can be adjusted in large steps to rotate around the adjusting axis to change the reflection angle, and the center wavelength is selected by matching the diffraction efficiency. The linear motor is driven to enable the maximum elongation of the output shaft 13 to be 1.5mm, and the stepping precision can be adjusted within 0.01-0.1 mm. The central wavelength can be changed along with the extension and contraction of the output shaft 13 of the linear motor, the change range is 630-640 nm, and the step of changing the central wavelength can be 0.1nm at the minimum and 1nm at the maximum. The elongation of the output shaft 13 of the linear motor is fixed, the micro-displacement structure 12 is driven by piezoelectric ceramics, the reflection angle of the grating 11 is finely tuned, and the micro-stepping output wavelength change is realized. Details of the piezo-driven angle fine adjustment mechanism 12 are shown in fig. 2. The output wavelength is precisely adjusted along with the angle of the reflection grating 11 by the piezoelectric ceramic driving micro-displacement structure 12, so that continuous tuning output of the wavelength in the range of +/-0.5 nm is realized, and the stepping precision of continuous wavelength tuning can be 10-5nm at minimum. The angle of the reflection grating 11 is adjusted by adjusting and driving the linear motors 13 and 14 and the piezoelectric driving angle fine adjustment mechanism 12, so that the diffraction efficiency of the grating 11 can be changed, and the continuous change of the wavelength of the output single longitudinal mode laser is realized, and the wavelength is continuously tunable.
Fig. 2 is a micro-rotation structure for fine adjustment of angle of longitudinal mode compression and mode selection reflection grating according to the present invention, and the piezoelectric driving angle fine adjustment mechanism 12 in fig. 2 is composed of a micro-structure mounting base 121, a piezoelectric ceramic mounting base 122, a piezoelectric ceramic 123 and a micro-deformation displacement structure moving plate 124. The lower end of the microstructure mounting seat 121 is mounted at the top end of the linear motor output shaft 13. The piezoelectric ceramic mounting seat 122 is of a threaded mounting structure, the top end of the piezoelectric ceramic mounting seat 122 is connected with the bottom end of the piezoelectric ceramic 123, and the outer side of the piezoelectric ceramic 12 is connected with the center of the microstructure mounting seat 121 through threads. The top end of the piezoelectric ceramic 123 is a ball head structure which is in free contact with a ball socket at the center part of one end of the micro-deformation displacement structure moving plate 124. The other end of the micro-deformation displacement structure moving plate 124 is linked with the rear surface of the reflection grating 11, and the periphery of the piezoelectric ceramic 123 is linked at the top end of the micro-structure mounting seat 121 through linear cutting to form a micro-deformation structure.
Claims (2)
1. A single longitudinal mode semiconductor laser with continuously tunable wavelength is characterized by comprising an electroluminescent semiconductor luminous core part, an intracavity beam shaping part, a resonant cavity part and four parts of an intracavity longitudinal compression grating and a grating angle adjustment mode selection output part:
the electro-semiconductor luminous core part consists of a semiconductor luminous chip (07), a chip temperature homogenizing mounting gold-plated seat (03), a gold-plated seat temperature control semiconductor chip (04), a semiconductor luminous chip negative electrode lead (05), a semiconductor luminous chip negative electrode connecting gold-plated plate (01) and an insulating layer (02) positioned between the negative electrode connecting gold-plated plate (01) and the chip temperature homogenizing mounting gold-plated seat (03), wherein the lower surface of the chip temperature homogenizing mounting gold-plated seat (03) is closely contacted with the upper surface of the temperature control semiconductor chip (04), the lower surface of the temperature control semiconductor chip (04) is mounted on a bottom plate of a heat dissipation shell, and the temperature control semiconductor chip (04) is connected with a temperature controller; the bottom surface of the semiconductor light-emitting chip (07), namely the positive electrode of the light-emitting core, is tightly arranged at one end of the upper surface of the chip temperature homogenization mounting gold-plated seat (03), the rear end surface (06) of the semiconductor light-emitting chip (07) is plated with a 630-640 nm wave band laser total reflection film, namely the front end surface of the semiconductor light-emitting chip (07) is plated with a 630-640 nm wave band laser antireflection film to be an oscillation light output end, the negative electrode of the semiconductor light-emitting chip (07) is connected to a negative electrode connection gold-plated plate (01) through a negative electrode lead (05), and the negative electrode connection gold-plated plate (01) is attached to an insulating layer (02) and is arranged at the other end of the chip temperature homogenization mounting gold-plated seat (03) and is separated from the rear end surface (06) of the semiconductor light-emitting chip (07) by a certain distance; the luminous end face of the semiconductor luminous chip (07) is of a rectangular structure; the beam shaping part in the cavity consists of a shaping cylindrical lens (08) and a shaping prism (09), the shaping cylindrical lens (08) is directly glued on the front end face of the semiconductor light-emitting chip (07), a cylindrical generatrix of the shaping cylindrical lens (08) is parallel to the long side of the rectangular end face of the light-emitting core of the semiconductor light-emitting chip (07), the shaping prism (09) adopts a structure with an included angle only in the fast axis direction, only the fast axis is reshaped, the included angle of the shaping prism is designed to enable the divergence angle of the fast axis after deflection compression to be the same as the divergence angle of the slow axis, and oscillation light enters the shaping prism (09) at Brewster angle;
the rear end face (06) of the semiconductor light-emitting chip, a shaping cylindrical lens (08), a shaping prism (09), a compression and mode selection reflection grating (11), a directional reflector (16) and a front output cavity mirror (17) which sequentially pass through the output oscillating light forwards form a laser resonant cavity together; the cavity-inserted longitudinal compression grating and grating angle adjustment mode selection output part consists of a longitudinal compression and mode selection reflection grating (11), an output shaft (13) and a driving shaft (14) of an angle rough adjustment linear motor, a piezoelectric driving angle fine adjustment mechanism (12), an angle adjustment shaft (10) and a bottom plate (15),
one end of the reflection grating (11) passes through
The angle adjusting shaft (10) is arranged on the bottom plate (15), the other end of the angle adjusting shaft is suspended, the middle of the back surface of the reflection grating (11) is connected with the top end of the piezoelectric driving angle fine adjusting mechanism (12), the other end of the piezoelectric driving angle fine adjusting mechanism (12) is connected with the top end of the output shaft (13) of the angle coarse adjusting linear motor, the driving shaft (14) of the linear motor is arranged on the bottom plate (15), and an adjustable triangular supporting structure is formed by the connecting point of the angle adjusting shaft (10) and the bottom plate, the connecting point of the driving shaft (14) of the linear motor and the bottom plate and the end point of the top end of the piezoelectric driving angle fine adjusting mechanism (12); the driving shaft (14) of the linear motor drives the extension or contraction of the output shaft (13) of the linear motor for coarse adjustment of the angle so as to adjust the angle of the reflection grating (11), the piezoelectric driving angle fine adjustment mechanism (12) is used for more precisely adjusting the angle of the compression and mode selection grating, and the compression and mode selection grating and the mode selection grating are combined to more precisely select the longitudinal mode reflection with highest grating diffraction efficiency so as to form the central wavelength resonant laser.
2. The single longitudinal mode semiconductor laser with continuously tunable wavelength according to claim 1, wherein the piezoelectric driving angle fine tuning mechanism (12) is composed of a microstructure mounting seat (121), a piezoelectric ceramic mounting seat (122), a piezoelectric ceramic (123) and a micro deformation displacement structure moving plate (124), the bottom end of the microstructure mounting seat (121) is mounted at the top end of the linear motor output shaft (13), the piezoelectric ceramic mounting seat (122) is of a screw thread mounting structure, the top end of the piezoelectric ceramic mounting seat (122) is connected with the bottom end of the piezoelectric ceramic (123), the outer circumference of the piezoelectric ceramic (123) is connected with the center of the microstructure mounting seat (121) through screw threads, and the top end of the piezoelectric ceramic (123) is of a ball head structure and is connected with the micro deformation displacement structure moving plate (124)
The ball socket at the center of one end forms movable contact, the periphery of the micro-deformation displacement structure moving plate (124) is connected with the top end of the mounting seat 121 through linear cutting to form a micro-deformation structure, and the other end of the micro-deformation displacement structure moving plate (124) is connected with the rear surface of the reflection grating (11).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810263717.3A CN108400520B (en) | 2018-03-28 | 2018-03-28 | Wavelength Continuously Tunable Single Longitudinal Mode Semiconductor Laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201810263717.3A CN108400520B (en) | 2018-03-28 | 2018-03-28 | Wavelength Continuously Tunable Single Longitudinal Mode Semiconductor Laser |
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| DE102017123798B4 (en) * | 2017-10-12 | 2022-03-03 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Semiconductor lasers and manufacturing processes for optoelectronic semiconductor components |
| CN110553124A (en) * | 2018-06-01 | 2019-12-10 | 长春理工大学 | Two-stage composite single-reflector type mechanical tracking rotary table for laser communication |
| CN113588101B (en) * | 2020-04-30 | 2023-05-02 | 北京科益虹源光电技术有限公司 | Absolute wavelength calibration method of excimer laser |
| CN112510475B (en) * | 2020-12-02 | 2022-05-24 | 北京科益虹源光电技术有限公司 | Method and device for adjusting output wavelength of laser |
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