CN207953531U - Wafer processing system - Google Patents

Wafer processing system Download PDF

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Publication number
CN207953531U
CN207953531U CN201721860830.7U CN201721860830U CN207953531U CN 207953531 U CN207953531 U CN 207953531U CN 201721860830 U CN201721860830 U CN 201721860830U CN 207953531 U CN207953531 U CN 207953531U
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wafer
grinding
carrier
flat plates
imaginary line
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Chinese (zh)
Inventor
孙昞澈
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Case Polytron Technologies Inc
KC Tech Co Ltd
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Case Polytron Technologies Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/6773—Conveying cassettes, containers or carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67775—Docking arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

The utility model is related to a kind of wafer processing systems, and provide a kind of wafer processing system, and the wafer processing system includes：Wafer supply unit is used to supply the wafer that will carry out treatment process；Grind section, it obtains the supply of the wafer from the wafer supply unit, and the wafer is ground, the wafer processing system is configured in the first cleaning module for being configured at the first flushing channel and is configured at any one in the second cleaning module of the second flushing channel or more and is cleaned to the wafer being ground in the grind section, to can carry out a variety of grinding technics of various ways according to the type of wafer in a configuration structure for occupying regulation space.

Description

Wafer processing system
Technical field
The utility model is related to a kind of wafer processing systems, in further detail, are related to a kind of wafer processing system, have It can carry out a variety of grinding technics while one configuration structure as needed, and occupied in production line by making It is space-minimized and make space efficiency maximization.
Background technology
Semiconductor element is manufactured by subtle circuit line High Density Integration, needs to carry out and this phase in wafer surface The precise finiss answered.In order to more critically carry out the grinding of wafer, the chemical machine of mechanical lapping and chemical grinding parallel is carried out Tool grinding technics (CMP process).
Recently, the grinding layer thickness control of precision is carried out by carrying out a variety of grinding technics for a wafer. In order to carry out a variety of grinding technics, propose that a kind of wafer is handled in the wafer of the form by being moved while multiple grinding flat plates System.
According to Korean Patent Laid, No. 2011-13384 is disclosed directly below a kind of composition：Wafer carrier is with equipped with crystalline substance The state of member carries out a variety of grind along while being formed as circular guide rail and move in the multiple grinding flat plates configured along guide rail Grinding process.But due to carrying out a variety of grinding technics while wafer carrier moves in order along a guide rail, so problem It is, a variety of grinding technics that can be carried out in a configuration structure are limited as a kind, or are limited as missing a part of grinding A variety of grinding technics of the form of tablet.
In addition, according to Korean Patent Laid the 2011-65464th, constituted in the form of following：Wafer is equipped on can The head of the carousel of rotation, carousel carry out a variety of grindings on defined grinding flat plate in order while rotation Technique.But described constitute is also only to determine the movable passageway of wafer by the rotation of carousel, so with as follows Limitation：The a variety of grinding technics that can be carried out in a configuration structure are only limited as a kind, or are only limited as missing a part A variety of grinding technics of the form of grinding flat plate.
In addition, grinding layer surface planarisation of the chemical mechanical milling tech as described above for making wafer, grinds work Grinding pad used in skill uses the harder materials such as polyurethane.The planarization process technique is referred to as main grinding Technique.
But the main grinding technics carried out on the grinding pad of hard material may be produced in the lapped face of wafer Therefore raw defect is attempted as follows recently：After main grinding technics, in the grinding pad using more soft On be polished (buffing) grinding technics so that the abradant surface of wafer defect minimize, polishing grinding technique with The grinding carried out in main grinding technics is compared, in a relatively short period of time so that wafer is ground to relatively thin thickness.
It can also root but carry out finally ground polishing grinding technique to the abradant surface of wafer with the state that do not damage It is carried out by kinds of processes according to the state of wafer.In other words, polishing process can be according to the type of wafer or the chemistry of progress The difference of mechanical milling tech variable and it is different, although generally completing polishing process by step, can also lead to The case where crossing the abradant surface of polishing process completion wafer of two steps.
But in Korean Patent Laid the 2011-13384th and Korean Patent Laid the 2011-65464th Disclosed the case where being polished technique using existing chemical machinery polishing system, not only equips excessively complexity, but also later The process transferred to cleaning unit also become complicated because nor technique is ground independently of each other, to grinding The variable of grinding process carries out control aspect and there is limitation.
Utility model content
The utility model proposes under technical background above-mentioned, its purpose is to provide a kind of wafer processing system, It can carry out a variety of grinding technics of various ways in a configuration structure for occupying regulation space according to the type of wafer.
In particular, the purpose of this utility model is that, utilize the wafer processing system that is arranged with efficient space configuration with Diversified mode carries out wafer the grinding technics of four steps.
In addition, the purpose of this utility model is that, even if not with the wafer carrier of the state movement equipped with wafer Upper installation drive motor can also dock docking unit, to carry out grinding for wafer like clockwork in mutually different position Grinding process.
Also, the purpose of this utility model is that the movable passageway of wafer and non-circular, but along the logical of vertex form Road moves, and the area occupied in the required equipment of the treatment process of configuration wafer is made to minimize accordingly.
At the same time, the purpose of this utility model is that, in order to enable wafer (including wafer carrier) is in the movement of wafer It is moved past from apex on channel, needs to carry out mobile carrier support with the state equipped with wafer carrier, carried with being installed on The state of body support carries out the grinding technics of wafer, so that the wafer grinding technics of four steps is to occupy smaller face Long-pending form carries out.
Accordingly, its object is to so that according to wafer while occupied space-minimized on semiconductor manufacturing line State or type carry out a variety of grinding technics.
In order to realize the purpose, the utility model provides a kind of wafer processing system comprising：Wafer supply unit, For supplying the wafer that will carry out treatment process；Grind section obtains the supply of the wafer from the wafer supply unit, and The wafer is ground；Cleaning part is configured between the wafer supply unit and the grind section, is being configured at first First cleaning module of flushing channel and to be configured at any one in the second cleaning module of the second flushing channel above in institute The wafer that grind section is ground is stated to be cleaned, and first flushing channel and second flushing channel mutually every Open configuration；Transfer device is set to the cleaning part, and for the wafer to be transferred to institute from the wafer supply unit State grind section.
Recorded term " holding ", " carrying ", " installation " are defined as in present specification and claims, refer to wafer The form moved together with wafer carrier.Therefore, " hold " or " carrying " or " installation " is not limited in the wafer of wafer carrier In the specific modalities such as the inside that should be located at wafer carrier or position.
Term " grinding " recorded in present specification and claims and " grinding technics " definition similarly To look like as follows：The technique being ground to the abradant surface of wafer is referred to, and includes that chemical grinding and mechanical lapping are combined Chemical mechanical milling tech, wherein by lapping liquid carry out chemical grinding, pass through friction carry out mechanical lapping.
As described above, the utility model provides a kind of wafer processing system, can occupy one of regulation space Carry out the multi-step grinding technics of two steps or four steps in configuration structure as needed according to the type of wafer.
Also, the utility model is constituted in the form of following：Even if not with the wafer of the state movement equipped with wafer Drive motor is installed on carrier, docking unit can also be docked in mutually different position, to can not only reduce wafer Area shared by processing system, and the treatment process of wafer can be carried out like clockwork.
In addition, the utility model can obtain following advantageous effects：The movable passageway of wafer is simultaneously non-circular, but along top The channel movement of point form can not only make the face occupied in the required equipment of the treatment process of configuration wafer accordingly Product minimizes, and makes wafer carrier so that wafer carrier to be equipped on to sharp (top of the state in wafer of carrier support Near point) move on movable passageway, in particular, being configured to be installed on the grinding work that the state of carrier support carries out wafer Skill, to carry out the wafer grinding technics of four steps in smaller area.
Accordingly so that can also be according to the state of wafer while occupied space-minimized on semiconductor production line Or type carries out a variety of grinding technics.
Description of the drawings
Fig. 1 is the plan view for the wafer processing system for showing one embodiment according to the present utility model,
Fig. 2 is the plan view of the grind section of Fig. 1,
Fig. 3 is the figure that the operating principle that the wafer carrier to being moved along guide rail is moved to connection track illustrates,
Fig. 4 is the stereogram of the wafer carrier of Fig. 3,
Fig. 5 is the longitudinal section of Fig. 4,
Fig. 6 is the stereogram for the state for showing that docking unit is docked with the wafer carrier of Fig. 3,
Fig. 7 is the figure of the wafer treatment process for the first embodiment for showing wafer processing system according to figure 1,
Fig. 8 is the wafer treatment process for the second implementation form for showing wafer processing system according to the present utility model Figure,
Fig. 9 is the wafer treatment process for the third implementation form for showing wafer processing system according to the present utility model Figure,
Figure 10 is the wafer treatment process for the 4th implementation form for showing wafer processing system according to the present utility model Figure,
Figure 11 is the wafer treatment process for the 5th implementation form for showing wafer processing system according to the present utility model Figure,
Figure 12 is the wafer treatment process for the 6th implementation form for showing wafer processing system according to the present utility model Figure,
Figure 13 is the wafer treatment process for the 7th implementation form for showing wafer processing system according to the present utility model Figure,
Figure 14 is the wafer treatment process for the 8th implementation form for showing wafer processing system according to the present utility model Figure.
Specific implementation mode
Hereinafter, the wafer processing system 1 of one embodiment according to the present utility model is described in detail with reference to attached drawing. But when being illustrated to the utility model, for well known function or the same or analogous drawing reference numeral of imparting is constituted, and And in order to enable the main idea of the utility model is clear and omits to this explanation.
As shown in Figures 1 and 2, the wafer processing system 1 of one embodiment according to the present utility model includes：Wafer supplies Portion Xo is used to supply the new wafer W that will carry out treatment process；Transfer device RT obtains crystalline substance from wafer supply unit Xo The supply of first W simultaneously supplies wafer to grind section X1；Grind section X1 is ground for the wafer that transfer device RT is passed over Grinding process；Cleaning part X2 cleans the wafer W ground in grind section X1.
The wafer supply unit Xo is stored with the multiple wafer W that will carry out treatment process, and by transferring arm by wafer W It is transferred to the placement section PP that transfer device RT can be reached.Although it is not shown in the figure, positioned at the wafer W of wafer supply unit Xo It can not also be directly transported by transfer device RT by placement section PP.
The transfer device RT obtains the transmission of wafer W from wafer supply unit Xo and supplies to the loading part of grind section X1 UU.Transfer device RT can use a variety of devices that can transport wafer W, for example, it may be by being carried with adsorbed state The structure of transfer, or as shown in the picture, mechanical arm can also be configured to.
The grind section X1 includes：Loading part LU carries the wafer W supplied from transfer device RT to wafer support C； Wafer support C carries wafer W from loading part LU, and is moving along the grinding for carrying out wafer W while channel R movements Technique；Grinding flat plate P1-1, P1-2, P2-1, P2-2 are configured on the movable passageway R that wafer support C is moved, so as to needle Wafer W to being equipped on wafer support C is ground technique；Carrier support H1-1, H1-2, H2-1, H2-2；H, with receiving The state of wafer support C is moved along defined channel；Uninstalling portion UU is carried out in advance for the wafer W for being equipped on wafer support C After fixed grinding technics, uninstalling portion UU unloads wafer W from wafer support C.
Here, the first guide rail G1 is configured at the first movement channel R1 of wafer support C movement, the second guide rail G2 is configured at crystalline substance Second movable passageway R2 of first support C movement, third guide rail G3 are configured at the third movable passageway R3 of wafer support C movement.Such as Shown in attached drawing, first movement channel R1 and the second movable passageway R2 are spaced from each other configuration, are provided with third movement between Channel R3.
Although exemplifying first movement channel R1, the second movable passageway R2 in attached drawing and third movable passageway R3 all being configured For the composition of rectilinear configuration, but tracing pattern can also be formed as, and can also be formed as straight line and curve mixes Form.
Also, it is formed with the first interface channel R4 of connection 1-1 position S1-1 and the positions 2-1 S2-1, the positions 1-1 One end S1e of S1-1 and first movement channel R1 are facing, one end S2e phases of the positions 2-1 S2-1 and the second movable passageway R2 It faces.First interface channel R4 is provided with the first connection track CR1, in the first connection track CR1 in the form of removable 88 It is provided with 1-1 carrier support H1-1 and 1-2 carrier support H1-2,1-1 carrier support H1-1 and 1-2 carriers Support H1-2 can also be moved with the state for holding wafer support C.
Although 1-1 carrier support H1-1 and 1-2 carrier supports H1-2 can in non-interference range edge The first connection track CR1 movement, but generally 1-1 carriers support H1-1 be the first guide rail G1 one end S1e and Use when the distance between one end S3e of third guide rail G3 carries out round-trip, 1-2 carrier supports H1-2 is in the second guide rail G2 One end S2e and the distance between one end S3e of third guide rail G3 use when carrying out round-trip.
Accordingly, wafer support C can be the one of the first guide rail G1 and third guide rail G3 via 1-1 carrier supports H1-1 It comes and goes between end, it can be between the second guide rail G2 and one end of third guide rail G3 via 1-2 carrier supports H1-2 It comes and goes.
Another implementation form according to the present utility model can also be constituted in the form of following：In the first connection track CR1 There are one carrier supports for setting, to be moved in the entire length of the first interface channel R4 along the first connection track CR1, It is also equipped with another carrier support in the second connection track CR2, to be connected second along the second connection track CR2 It is moved in the entire length of channel R5.
Similarly, it is formed with the second interface channel R5 of connection 1-2 position S1-2 and the positions 2-2 S2-2, the The positions 1-2 S1-2 and the other end S1e' of first movement channel R1 are facing, the positions 2-2 S2-2 and the second movable passageway R2's Other end S2e' is facing.Second interface channel R5 is provided with the second connection track CR2, in the second connection track CR2 with can Mobile 88 form is provided with 2-1 carrier support H2-1 and 2-2 carrier support H2-2,2-1 carrier supports H2- 1 and 2-2 carrier supports H2-2 can also be moved with the state for holding wafer support C.
Although 2-1 carrier support H2-1 and 2-2 carrier supports H2-2 can in non-interference range edge The second connection track CR2 movements, but generally 2-1 carriers support H2-1 is the other end S1e ' in the first guide rail G1 Use when the distance between other end S3e ' of third guide rail G3 carries out round-trip, 2-2 carrier supports H2-2 is second Use when the distance between other end S3e ' of other end S2e ' and third guide rail G3 of guide rail G2 carries out round-trip.
Accordingly, wafer support C can also be in the other end and third of the first guide rail G1 via 2-1 carrier supports H2-1 Come and go between the other end of guide rail G3, via 2-2 carrier supports H2-2 can the second guide rail G2 the other end and It comes and goes between the other end of third guide rail G3.
Here, 1-1 grinding flat plates P1-1 and 1-2 grinding flat plates P1-2 are configured at prolonging as first movement channel R1 On first imaginary line L1 of long line, 2-1 grinding flat plates P2-1 and 2-2 grinding flat plates P2-2 are configured at and lead to as the second movement On second imaginary line L1 of the extended line of road R2.
At this point, 1-1 grinding flat plates P1-1 and 1-2 grinding flat plates P1-2 can all be configured at first movement channel R1 On, 2-1 grinding flat plates P2-1 and 2-2 grinding flat plates P2-2 can be all configured on the second movable passageway R2.This feelings Under condition, wafer support C in the state of positioned at the first guide rail G1 and the second guide rail G2, the grinding flat plate P1-1, P1-2, P2-1, P2-2 carry out the grinding technics of wafer W, and the first guide rail G1 is configured at first movement channel R1, and the second guide rail G2 is configured at Second movable passageway R2.
Chemical mechanical milling tech can be both carried out in each grinding flat plate P1-1, P1-2, P2-1, P2-2, it can also be into Row polishing grinding technique, and the mechanical milling tech by friction can also be carried out in the state of without chemical grinding. In the case of carrying out chemical mechanical milling tech, configured with lapping liquid supply unit, quality-adjusting device etc. on grinding flat plate P, carrying out In the case of polishing grinding technique, configured with solution supply unit etc., solution supply unit is used for (pure for being given to the liquid that wafer supplies Water or buck etc.).In the case where carrying out polishing grinding technique on grinding flat plate P, with the feelings for carrying out chemical mechanical milling tech The grinding pad for the Polyurethane being arranged under condition is compared, and the lower grinding pad of relative hardness is covered on grinding flat plate.
It is further preferred that as shown in Figures 1 and 2, although 1-1 grinding flat plates P1-1 is configured at first movement channel R1, 2-1 grinding flat plates P2-1 is configured on the second movable passageway R2, but 1-2 grinding flat plates P1-2 and 2-2 grinding flat plates P2-2 is configured on the first interface channel R4.In other words, the transportable first movement channel R1 of wafer support C belongs to first A part of imaginary line L1, the transportable second movable passageway R2 of wafer support C belong to a part of the second imaginary line L2.
Here, so-called 1-2 grinding flat plates P1-2 and 2-2 grinding flat plates P2-2 are configured on the first interface channel R4 It is defined as, although a part of of 1-2 grinding flat plates P1-2 and 2-2 grinding flat plates P2-2 can be located at first movement channel R1 Or second on movable passageway R2, but the grinding of wafer is carried out on 1-2 grinding flat plates P1-2 and 2-2 grinding flat plates P2-2 On the position of technique, wafer support C is located at the first interface channel R4.
In this way, if 1-2 grinding flat plates P1-2 and 2-2 grinding flat plates P2-2 are configured on the first interface channel R4, Then wafer support C is ground in the state of being contained in carrier support H1-1, H1-2 in 1-2 grinding flat plates P1-2 and 2-2 Tablet P2-2 carries out the grinding technics of wafer.Accordingly, due to can more reduce the length of grind section X1 compared with the prior art L, so grind section X1 can be configured to narrower area at the scene, thus, it is possible to obtain so that the efficiency in space more Add the advantageous effects of raising.
The wafer support C is in guide rail G1, G2, G3；G is upper individually, independently moves, and in connection track CR1, CR2； CR is upper to be contained in carrier support H1-1, H1-2, H2-1, H2-2；The state of H is moved by the movement of carrier support H. In the configuration diagram of Fig. 1 and Fig. 2, the rectangle form formed by multi-drop line makes wafer support C simplification and shows.
As shown in Figures 4 and 5, wafer support C is constituted in the form of following：It is alternately arranged the poles N permanent magnet in upside The poles 128n and S permanent magnet 128s is the non-power state for being not provided with drive motor or pneumatics feedway in inside.By This, as shown in figure 3, being controlled by the current direction of the power supply 89 to being applied to coil 90, accordingly, according to linear motor Principle is moved along guide rail G, wherein coil 90 is set to frame F, and frame F is formed in grinding flat plate P1, P2；The upside of P.
Also, if wafer support C is located at the upside of grinding flat plate P, docks cells D and combined with wafer support C, to Supply is so that the rotary driving force of wafer W rotation drivings and the pneumatics for wafer W to pressurize downwards.
For this purpose, as shown in Figures 4 and 5, the poles N and the poles S are formed in inner peripheral surface to receive the transmission of rotary driving force The alternately arranged magnetic coupler 124 of permanent magnet, in the peripheral surface of the drive shaft 186 of docking cells D, the permanent magnetic of the poles N and the poles S Iron is alternately arranged also along circumferencial direction, if to dock the drive shaft 186 of cells D close to the magnetic coupler of wafer support C It 124 and is rotated with the state of insertion, then rotary driving force is transferred to magnetic coupler 124 and obtains rotation driving 124r.Cause This, the rotary shaft 125 for linking and rotating with magnetic coupler 124 rotates 125r together, and the rotary driving force of rotary shaft 125 is logical The power transmission for crossing gear etc. to transmit to grinding head CH while the rotation driving 126r of vertical axes 126, so that Wafer W rotates driving in grinding technics.At this point it is possible to which the central portion in magnetic coupler 124 forms leading axle 124o, to draw The drive shaft 186 for leading docking cells D is inserted in magnetic coupler 124.
In addition, in the peripheral surface of wafer support C, the pneumatics supply mouth 123x combined with air-pressure tube is formed in outside, if Docking cells D is docked to wafer support C close to 8,8', then the engaging portion 187 for docking the air-pressure tube 187a of cells D is inserted in sky Supply mouth 123x is pressed, while by being transferred to grinding for rotation from the extended pneumatics feed paths of pneumatics supply mouth 123x 123,129 Bistrique CH.At this point, because grinding head CH carried out in grinding technics rotation 126r driving, pneumatics feed path 123, Rotary joint RU is set on 129, so as to successfully supply pneumatics to the grinding head CH for carrying out rotation driving.
Also, wafer support C persistently keeps non-rotary shape in along the movable passageway of guide rail G and connection track CR State.Therefore, it is only docked on one side as defined in wafer support C although docking cells D can also be configured to, the feelings Under condition, any one in the interval and third guide rail G3 of third guide rail G3 and the first guide rail G1 and the interval of the second guide rail G2 needs More than required interval, therefore so that whole space efficiency reduces.
Therefore, as shown in Figure 1, relative to the first guide rail G1, docking cells D is configured at outside (under on the basis of Fig. 1 Side), relative to the second guide rail G2, docking cells D is also configured at outside (upside on the basis of Fig. 1), to from opposite The form that direction is moved 8,8' and docked in the opposite direction is constituted, and the raising overall space efficiency aspect that is formed in has Effect.At this point, while movement along guide rail G due to wafer support C, with non-rotary state along channel R1, R2, R3, R4, R5 is moved, therefore, in order to enable wafer support C can be combined with from the upper side and lower side (Fig. 1 benchmark) close docking cells D, As shown in figure 5, pneumatics engaging portion 123 and magnetic coupler 124 are formed at two faces of opposite side.Accordingly so that at wafer The configuration of reason system is kept as overall compact it is also possible to advantage is obtained that：It can avoid the need for so that wafer support C The complicated control and structure of rotation.
Also, in the two sides of wafer support C, upper side wheel 127U and lower side wheel the 127L shape in the form of it can rotate At not moved reelingly so as to multiply guide rail G.According to different situations, can be sidewindered on wafer support C is only arranged 127U is taken turns, so as to be positioned over guide rail G, and in the guide rail that is positioned against for being ground technique can be close to that clamping section is arranged Part, to prevent the position of wafer support C crooked in grinding technics.Wafer support C is along guide rail C and connection rail Non-rotary state is persistently kept while movement on the channel of road CR.
Unaccounted label 121 is the engaging portion being connect with the grinding head CH of wafer support C in attached drawing.
In addition, be fixed on frame F as shown in fig. 6, docking cells D and be arranged in the form of it horizontal can move back and forth 8, with It can be combined with the wafer support C moved along guide rail G.For this purpose, if by mobile motor 181 so that rotary shaft 182 is revolved Turn driving, then movable plate 184 carries out round-trip 8 according to the principle of driving screw by rotary shaft 182.
Also, movable plate 184 is provided with drive shaft 186, rotation drive motor 185 is fixed on drive shaft 186, and leads to It crosses rotation drive motor 185 and makes the rotation driving of drive shaft 186, the movement of movable plate 184 is made by mobile motor 181, accordingly, While drive shaft 186 is inserted in magnetic coupler 124 of wafer support C, rotary driving force can be transmitted to wafer support C by becoming State.At the same time, with the movement of movable plate 184, the sky of the engaging portion 187 and wafer support C of pneumatics supply pipe 187a While pressing supply unit 123x to combine, become the state that can also supply pneumatics.
As shown in figure 3, the carrier support H is configured to, it is formed with the support mounted track for accommodating wafer support C HR, to can independently accommodate the wafer support C moved along guide rail G with the configuration for connecting track CR.For this purpose, in carrier branch It holds and is also formed with coil 209 on the upside of frame H, pass through the interaction of the permanent magnet 128 with the upside for being arranged in wafer support C It can carry out so that the operation that wafer support C is moved to carrier support H.
At this point, during support mounted track CR of the wafer support C from guide rail G to carrier support H is moved, in order to anti- The only impact of wafer support C when wafer support C is moved to carrier support H, supports mounted track HR to be moved towards guide rail G, to Section bank or segment difference can also be reduced or eliminated.
At this point, connection track CR keeps the state separated with guide rail G, as shown in figure 3, can also be to be mutually separated with upper-lower height The form configuration of difference.
Carrier support H is in each connection track CR1, CR2；There are two CR configurations.Track CR1 is connected for first, 1-1 carrier support H1-1 and 1-2 carrier support H1-2 are provided with, so as to be moved along the first connection track CR1 It is dynamic.Also, for the second connection track CR2,2-1 carrier support H2-1 and 2-2 carrier support H2-2 are provided with, from And it can be moved along the second connection track CR2.
1-1 carrier supports H1-1 can accommodate the wafer of any one in the first guide rail G1 and third guide rail G3 Support C, and can be moved back and forth along the first connection track CR1 with the state for accommodating wafer support C, along the first connection rail The wafer support C that road CR1 is received after moving back and forth is moved to can be to one end S1e's and third guide rail G3 of the first guide rail G1 The position that any one in the S3e of one end moves.
Similarly, 1-2 carriers support H1-2 can be accommodated appoints in third guide rail G3 and the second guide rail G2 The wafer support C of meaning one, and can be moved back and forth along the first connection track CR1 with the state for accommodating wafer support C, edge The wafer support C being received after the first connection track CR1 is moved back and forth be moved to can to third guide rail G3 one end S3e and The position that any one in one end S2e of second guide rail G2 moves.
In addition, 2-1 carrier supports H2-1 can accommodate in the first guide rail G1 and third guide rail G3 any one Wafer support C, and can be moved back and forth along the second connection track CR2 with accommodating the state of wafer support C, along second The wafer support C that connection track CR2 is received after moving back and forth is moved to can be to the other end S1e' of the first guide rail G1 and the The position that any one in the other end S3e' of three guide rail G3 moves.
Similarly, 2-2 carriers support H2-1 can be accommodated appoints in third guide rail G3 and the second guide rail G2 The wafer support C of meaning one, and can be moved back and forth along the second connection track CR2 with the state for accommodating wafer support C, edge That the wafer support C being received after the second connection track CR2 is moved back and forth is moved to can be to the other end of third guide rail G3 The position that any one in the other end S2e' of S3e' and the second guide rail G2 moves.
Therefore, wafer support C can be moved back and forth lightheartedly between guide rail G and connection track CR as needed. In this way, the movable passageway of wafer support C is formed by guide rail G and connection guide rail CR, even if to guide rail G and connection track CR shapes Also have the advantages that so that wafer support C can be with smooth movement, and even if identical number is arranged at the channel for constituting vertex With the grinding flat plate of size also can more ninor feature is at the space indicated with X1, so as to realize compact configuration structure.
In other words, the first guide rail G1 is configured to, and can be held to wafer support C in 1-1 grinding flat plates P1-1 Some wafer W are ground technique.Equally, the second guide rail G2 is configured to, and can be carried to wafer in the second grinding flat plate P2 The wafer W that body C is held is ground technique.
Grinding flat plate is not configured in the third guide rail G3, but is formed with the channel of wafer support C movement.But It is, due to being respectively configured there are two carrier support H in every connection track CR, thus can not be quickly from connection track CR's End S1-1, S1-2 are moved to another end S2-1, S2-2, so, one end S3e and other end S3e' of third guide rail G3 are played The interim effect for loading institute, it is interim to load used so that wafer support C changes to carrier support H.
The loading part LU can be a variety of compositions that wafer W is equipped on to wafer support C, for example, it may be South Korea steps on Remember patent gazette No. 10-1389533, No. 10-116387, No. 10-0997651 and Korean Patent Laid the Composition disclosed in No. 10-2017-0004552, and the content of the bulletin is merged into the part of this specification.Though A loading part LU can also be so only formed, but is distinguished in the position of tendency first movement channel R1 and the 2nd movable passageway R2 Form the first loading part LU1 and the second loading part LU2, this reduce so that wafer support C respectively to first movement channel R1 and It is preferred in terms of the process time of 2nd movable passageway R2 movements.
Uninstalling portion UU receiving wafer W when sucking of the removal for being carried from wafer support C to wafer W is pressed. Although a uninstalling portion UU can also be only formed, in the position point of tendency first movement channel R1 and the 2nd movable passageway R2 Do not form the first uninstalling portion UU1 and the second uninstalling portion UU2, to shorten for cleaning part X2 the first flushing channel L1 and It is preferred in terms of the transfer passage that second flushing channel L2 is transferred in turn.
In loading part LU and uninstalling portion UU, 2-1 carrier supports H2-1 and 2-2 are contained in wafer support C and carried Wafer W is loaded into wafer support C or unloads wafer W from wafer support C, wherein 2-1 is carried by the state of body support H2-2 Body support H2-1 and 2-2 carrier support H2-2 multiplies the second connection track CR2 and is moved along the second interface channel R5 It is dynamic.
Wafer support C be accommodated in the state of 2-1 carrier support H2-1 or 2-2 carrier supports H2-2 along Second connection track CR2 movements, meanwhile, the new crystalline substance that preparation is ground technique is obtained from loading part LU by transfer device RT First W, also, before the wafer W that will complete grinding technics is from uninstalling portion UU to cleaning part X2 transfers, pass through preparation cleaning device (preliminary cleaning device, be not shown) carries out prepared cleaning, and the wafer W by preparation cleaning passes through unloading Portion UU is transferred to the cleaning area X2 configured with cleaning module C1-1, C1-2, C2-1, C2-2 to overturn the state of 180 degree.
For the cleaning part X2, if being ground the wafer W of technique in uninstalling portion UU in grind section X1 to overturn 180 degree and abradant surface is transferred towards posture to the upper side, then be spaced from each other and alongst arrange in the direction of the width Cleaning module C1-1, C1-2, C2-1, C2-2 of first flushing channel CL1 and the second flushing channel CL2 ground for wafer The contact in face is cleaned and non-contact cleaning.
Here, since the transfer device RT formed by transfer arm is configured at the central part of cleaning part X2, it is thus possible to improve The efficiency of new wafer, and the cleaning being spaced centered on by transfer device RT are transferred from wafer supply unit Xo to grind section X1 Channel C L1, CL2 independently carries out the cleaning from the grind section X1 wafers transferred.
It is configured with the required cleaning module of cleaning of wafer in each flushing channel CL1, CL2.According to different cleanings Channel C L1, CL2 can only configure a cleaning module, can also configure three or more clear in each flushing channel CL1, CL2 Mold cleaning block.Most of all, as shown in the picture, each cleaning module C1-1, C1-2；C2-1, C2-2 are with two layers of lamination or more Form is formed, and by transferring arm RC1, RC2 to each cleaning module C1-1, C1-2；Each layer of C2-1, C2-2 transfer wafer W, So as to by cleanings more than three steps.
The wafer that cleaning is completed in the cleaning part X2 is re-directed towards the Xo discharges of wafer supply unit, to be transferred to Next technique.
Hereinafter, being handled the wafer of the first embodiment according to wafer processing system 1 formed as described above with reference to Fig. 7 Technique illustrates.
As shown in fig. 7, if carrying out the first wafer for the treatment of process from wafer supply unit Xo to placement section PP supply preparations A0, then the first wafer the first loading part LU1A1 is supplied to by transfer device RT.
At this point, being contained in first loading of the wafer support C of 2-1 carrier supports H2-1 on the second connection track R5 Portion LU1 is moved, to obtain the supply of the first wafer from the first loading part LU1 and be equipped on wafer support C.Later, wafer carries Body C is moved to the positions the 1-2 S1-2 on the opposite of the other end S3e ' of the first guide rail G1, and from 2-1 carrier supports H2-1 To the first guide rail G1 movements, controlled by the current direction of the power supply 89 to being applied to coil 90, according to linear motor Principle moves 99 along the first imaginary line L1, and then the abrasion site on 1-1 grinding flat plates P1-1 stops, wherein coil 90 are set to frame F.
Later, docking cells D shown in fig. 6 close to 8 and is docked to the wafer support C of Fig. 5, can be to create Wafer support C supplies the environment of rotary driving force and pneumatics.Later, the grinding head CH for being installed on the downside of wafer support C is downward Side is mobile or the upward side movements of grinding flat plate P, the first wafer to be equipped on wafer support C become abradant surface and grinding flat plate The state that P is in contact.Also, the first wafer W carries out the first grinding technics A2 in 1-1 grinding flat plates P1-1.
Later, wafer support C moves 99 to one end S1e of the first guide rail G1 of the end as first movement channel R1 Afterwards, it by mode shown in Fig. 3, is moved from the positions 1-1 S1-1 to waiting 1-1 carrier supports H1-1.Then, it receives It is dissolved in the wafer support C of 1-1 carrier supports H1-1 and the first crystalline substance is carried out for 1-2 grinding flat plates P1-2 with such state Second grinding technics A3 of member.
Although showing that the connection track CR of carrier support H is located at the downside of carrier support H in Fig. 3 for convenience, But the connection track CR of carrier support H with frame can be fixed on as guide rail in the form of supported.Accordingly, 1-2 Grinding flat plate P1-2 and 2-2 grinding flat plates P2-2 be non-interference and carrier support H can in 1-2 grinding flat plates P1-2 and It moves the upside of 2-2 grinding flat plates P2-2.
If completing the second grinding technics, 1-1 carrier support H1-1 are to one end G3e's positioned at third guide rail G3 The positions the 3-1 S3-1 on opposite is moved, and wafer support C is transferred to third guide rail G3A4 from 1-1 carrier supports H1-1.
Also, wafer support C multiplies third guide rail G3 movements 99, and 2- is moved to from the other end G3e ' of third guide rail G3 Wafer W is detached from wafer support C in the first uninstalling portion UU1 and is carried out prepared cleaning by A5 after 1 carrier support H2-1, then, The first wafer W is overturn into 180 degree by tipper and is moved the first wafer W to cleaning part X2 with the state of the overturning 180 degree Send A6.
Later, while the first wafer W is moved along the first flushing channel CL1 of cleaning part X2, in the cleaning mould of lamination A part in the block is above to carry out any one in contact cleaning and non-contact cleaning or more, to which neatly removal is stained on grinding The foreign matter A7 in face.
In this way, the first wafer for terminating the treatment process of grinding technics and cleaning etc. is moved to wafer supply unit Xo, And it is transferred to next technique A8.
In addition, while treatment process by the first wafer, transfer device RT obtains the second crystalline substance from wafer supply unit Xo The supply A0 of member, and the second wafer is supplied to the second loading part LU2B1.Also, warp similar with the treatment process of the first wafer Two are carried out while crossing the second transfer passage R2, the first interface channel R4, third transfer passage R3 and the second interface channel R5 The grinding technics B2-B5 of a step.
Later, the second wafer is transferred to cleaning part X2B6 in the second uninstalling portion UU2 after the separation of wafer support C, the Two flushing channel CL2 are transferred to wafer supply unit Xo after carrying out cleaning, are then transferred to next technique B7-B8.
As described above, the processing system 2 of wafer according to the present utility model is carried out at the same time two steps for two wafers Grinding technics, and can separately proceed through the treatment process of the cleaning of multi-step.
Hereinafter, being handled the wafer of the second implementation form according to wafer processing system 1 formed as described above with reference to Fig. 8 Technique illustrates.
As shown in figure 8, if carrying out the first wafer for the treatment of process from wafer supply unit Xo to placement section PP supply preparations A0, then the first wafer the first loading part LU1A1 is supplied to by transfer device RT.
At this point, being contained in first loading of the wafer support C of 2-1 carrier supports H2-1 on the second connection track R5 Portion LU1 is moved, to obtain the supply of the first wafer from the first loading part LU1 and be equipped on wafer support C.Later, wafer carries Body C is moved to the positions the 1-2 S1-2 on the opposite of the other end S3e ' of the first guide rail G1, and from 2-1 carrier supports H2-1 To the first guide rail G1 movements, controlled by the current direction of the power supply 89 to being applied to coil 90, according to linear motor Principle moves 99 along the first imaginary line L1, and then the abrasion site on 1-1 grinding flat plates P1-1 stops, wherein coil 90 are set to frame F.
Later, docking cells D shown in fig. 6 close to 8 and is docked to the wafer support C of Fig. 5, can be to create Wafer support C supplies the environment of rotary driving force and pneumatics.Later, the grinding head CH for being installed on the downside of wafer support C is downward Side is mobile or the upward side movements of grinding flat plate P, the first wafer to be equipped on wafer support C become abradant surface and grinding flat plate The state that P is in contact.Also, the first wafer W carries out the first grinding technics A2 in 1-1 grinding flat plates P1-1.
Later, wafer support C moves 99 to one end S1e of the first guide rail G1 of the end as first movement channel R1 Afterwards, it by mode shown in Fig. 3, is moved from the positions 1-1 S1-1 to waiting 1-1 carrier supports H1-1.Then, it receives It is dissolved in the wafer support C of 1-1 carrier supports H1-1 and the first crystalline substance is carried out for 1-2 grinding flat plates P1-2 with such state Second grinding technics A3 of member.
If completing the second grinding technics, 1-1 carrier support H1-1 are to one end G3e's positioned at third guide rail G3 The positions the 3-1 S3-1 on opposite is moved, and wafer support C is transferred to third guide rail G3A4 from 1-1 carrier supports H1-1. Also, wafer support C multiplies third guide rail G3 movements 99, and 2-1 carrier branch is moved to from the other end G3e ' of third guide rail G3 Hold frame H2-1A5.
Later, the wafer support C of 2-1 carrier supports H2-1 is contained in the other end G3e ' positioned at the first guide rail G1 Opposite the positions 1-2 S1-2 movement, then, by while first movement channel R1 and the first interface channel R4 in 1- Any one in 1 grinding flat plate P1-1 and 1-2 grinding flat plates P1-2 is above to carry out third grinding technics and according to different feelings Condition carries out the 4th grinding technics A5-1.
Later, the wafer support C equipped with the first wafer is supported by 2-1 carriers again after third movable passageway R3 Frame H2-1 receivings.It is accommodated in the state of 2-1 carrier supports H2-1 with wafer support C, makes crystalline substance in the first uninstalling portion UU1 First W is detached from wafer support C and is carried out prepared cleaning, then, by tipper by the first wafer W overturning 180 degrees and with described First wafer W is transferred A6 by the state for overturning 180 degree to cleaning part X2.
Later, while the first wafer W is moved along the first flushing channel CL1 of cleaning part X2, in the cleaning mould of lamination A part in the block is above to carry out any one in contact cleaning and non-contact cleaning or more, to which neatly removal is stained on grinding The foreign matter A7 in face.
In this way, the first wafer for terminating the treatment process of grinding technics and cleaning etc. is moved to wafer supply unit Xo, And it is transferred to next technique A8.
In addition, while treatment process by the first wafer, transfer device RT obtains the second crystalline substance from wafer supply unit Xo The supply A0 of member, and the second wafer is supplied to the second loading part LU2B1.Also, warp similar with the treatment process of the first wafer Two are carried out while crossing the second transfer passage R2, the first interface channel R4, third transfer passage R3 and the second interface channel R5 The grinding technics B2-B5 of a step.
Later, the wafer support C of 2-2 carrier supports H2-2 is contained in the other end G2e ' positioned at the second guide rail G2 Opposite the positions 2-2 S2-2 movement after, by being ground in 2-1 while the second movable passageway R2 and the first interface channel R4 Polish any one in plate P2-1 and 2-2 grinding flat plates P2-2 it is above carry out third grinding technics and according to different situations into The 4th grinding technics B5-1 of row.
Later, the second wafer is transferred to cleaning part X2B6 in the second uninstalling portion UU2 after the separation of wafer support C, the Two flushing channel CL2 are transferred to wafer supply unit Xo after carrying out cleaning, are then transferred to next technique B7-B8.
As described above, the processing system 2 of wafer according to the present utility model is carried out at the same time four steps for two wafers Grinding technics, and can separately proceed through the treatment process of the cleaning of multi-step.
Hereinafter, being handled the wafer of the third implementation form according to wafer processing system 1 formed as described above with reference to Fig. 9 Technique illustrates.
As shown in figure 9, if carrying out the first wafer for the treatment of process from wafer supply unit Xo to placement section PP supply preparations A0, then the first wafer the first loading part LU1A1 is supplied to by transfer device RT.
At this point, being contained in first loading of the wafer support C of 2-1 carrier supports H2-1 on the second connection track R5 Portion LU1 is moved, to obtain the supply of the first wafer from the first loading part LU1 and be equipped on wafer support C.Later, wafer carries Body C is moved to the positions the 1-2 S1-2 on the opposite of the other end S3e ' of the first guide rail G1, and from 2-1 carrier supports H2-1 To the first guide rail G1 movements, controlled by the current direction of the power supply 89 to being applied to coil 90, according to linear motor Principle moves 99 along the first imaginary line L1, and then the abrasion site on 1-1 grinding flat plates P1-1 stops, wherein coil 90 are set to frame F.
Later, docking cells D shown in fig. 6 close to 8 and is docked to the wafer support C of Fig. 5, can be to create Wafer support C supplies the environment of rotary driving force and pneumatics.Later, the grinding head CH for being installed on the downside of wafer support C is downward Side is mobile or the upward side movements of grinding flat plate P, the first wafer to be equipped on wafer support C become abradant surface and grinding flat plate The state that P is in contact.Also, the first wafer W carries out the first grinding technics A2 in 1-1 grinding flat plates P1-1.
Later, wafer support C moves 99 to one end S1e of the first guide rail G1 of the end as first movement channel R1 Afterwards, it by mode shown in Fig. 3, is moved from the positions 1-1 S1-1 to waiting 1-1 carrier supports H1-1.Then, it receives It is dissolved in the wafer support C of 1-1 carrier supports H1-1 and the first crystalline substance is carried out for 1-2 grinding flat plates P1-2 with such state Second grinding technics A3 of member.
If completing the second grinding technics, 1-1 carrier support H1-1 are to one end G3e's positioned at third guide rail G3 The positions the 3-1 S3-1 on opposite is moved, and wafer support C is transferred to third guide rail G3A4 from 1-1 carrier supports H1-1. Also, wafer support C multiplies third guide rail G3 movements 99, and 2-2 carrier branch is moved to from the other end G3e ' of third guide rail G3 Hold frame H2-1A5.
Later, the wafer support C of 2-2 carrier supports H2-2 is contained in the other end S2e ' positioned at the second guide rail G2 Opposite the positions 2-2 S2-2 move A6.
Also, wafer support C is shifted and is moved from 2-2 carrier support H2-2 to the second guide rail G2, is multiplied second and is led Stop on 2-1 grinding flat plates P2-1 while rail G2 movements, and is obtained so that wafer rotation by docking the docking of cells D Rotary driving force and pressurization wafer pneumatics supply, and on 2-1 grinding flat plates P2-1 carry out third grinding technics A7。
Also, wafer support C is ground in the state that the second guide rail G2 is transferred to 1-2 carrier supports H1-2 in 2-2 The 4th grinding technics A8 is carried out while polishing the rotary driving force and pneumatics that acquisition is supplied from docking cells D on plate P2-2.
It is ground in 1-1 here, docking the direction 8 ' that cells D is docked with wafer support C on 2-1 grinding flat plates P2-1 It is completely opposite to polish docking cells D and the direction 8 that wafer support C is docked on plate P1-1.Therefore, as shown in figure 4, carrying out first The position of grinding technics and second grinding technics, wafer support C carry out pair with cells D is docked from the side of wafer support C Connect, carry out third grinding technics and the 4th grinding technics position, wafer support C with dock cells D from wafer support C The other side docked.
Later, 1-2 carriers support H1-2 is moved to the positions 3-1 S3-1 facing one end G3e of third guide rail G It is dynamic, and wafer support C is transferred to third guide rail G and mobile A9 from 1-2 carrier supports H1-2.Later, equipped with first The wafer support C of wafer is accommodated in 2-1 carrier support H2-1A10 again after third movable passageway R3, with wafer Support C is accommodated in the state of 2-1 carrier supports H2-1, makes wafer W from wafer support C point in the first uninstalling portion UU1 From and after carrying out prepared cleaning, the first wafer is overturn 180 degree by tipper and is transferred to the state of the overturning 180 degree Cleaning part X2A11.
Later, while the first wafer W is moved along the first flushing channel CL1 of cleaning part X2, in the cleaning mould of lamination A part in the block is above to carry out any one in contact cleaning and non-contact cleaning or more, to which neatly removal is stained on grinding The foreign matter A12 in face.In this way, the first wafer for terminating the treatment process of grinding technics and cleaning etc. is moved to wafer supply unit Xo It is dynamic, and it is transferred to next technique A13.
As described above, wafer processing system 2 according to the present utility model is carried out at the same time four steps for a wafer Grinding technics, because the grinding technics of four steps carries out on mutually different grinding flat plate P1-1, P1-2, P2-1, P2-2, So even if carrying out chemical mechanical milling tech using mutually different lapping liquid or chemicals in each grinding technics, Having can be not by the harmful effect caused by the chemical reaction of mutually different lapping liquid or chemicals the case where yet Under the advantages of freely carrying out the grinding technics of four steps.
Hereinafter, referring to Fig.1 at the wafer of 0 pair of the 4th implementation form according to wafer processing system 1 formed as described above Science and engineering skill illustrates.
As shown in Figure 10, if carrying out the first wafer for the treatment of process from wafer supply unit Xo to placement section PP supply preparations A0, then the first wafer the first loading part LU1A1 is supplied to by transfer device RT.
At this point, being contained in first loading of the wafer support C of 2-1 carrier supports H2-1 on the second connection track R5 Portion LU1 is moved, to obtain the supply of the first wafer from the first loading part LU1 and be equipped on wafer support C.Later, wafer carries Body C is moved to the positions the 1-2 S1-2 on the opposite of the other end S3e ' of the first guide rail G1, and from 2-1 carrier supports H2-1 To the first guide rail G1 movements, controlled by the current direction of the power supply 89 to being applied to coil 90, according to linear motor Principle moves 99 along the first imaginary line L1, and then the abrasion site on 1-1 grinding flat plates P1-1 stops, wherein coil 90 are set to frame F.
Later, docking cells D shown in fig. 6 close to 8 and is docked to the wafer support C of Fig. 5, can be to create Wafer support C supplies the environment of rotary driving force and pneumatics.Later, the grinding head CH for being installed on the downside of wafer support C is downward Side is mobile or the upward side movements of grinding flat plate P, the first wafer to be equipped on wafer support C become abradant surface and grinding flat plate The state that P is in contact.Also, the first wafer W carries out the first grinding technics A2 in 1-1 grinding flat plates P1-1.
Later, wafer support C moves 99 to one end S1e of the first guide rail G1 of the end as first movement channel R1 Afterwards, it by mode shown in Fig. 3, is moved from the positions 1-1 S1-1 to waiting 1-1 carrier supports H1-1.Then, it receives It is dissolved in the wafer support C of 1-1 carrier supports H1-1 and the first crystalline substance is carried out for 1-2 grinding flat plates P1-2 with such state Second grinding technics A3 of member.
If completing the second grinding technics, 1-1 carrier support H1-1 are to one end G3e's positioned at third guide rail G3 The positions the 3-1 S3-1 on opposite is moved, and wafer support C is transferred to third guide rail G3A4 from 1-1 carrier supports H1-1. At this point, in the case of during wafer support C has waited for certain time, the wet sump of one end S3e by being configured at third guide rail G The wetting state of (wet bath, WB) and the first wafer of holding.
Also, in the positions the 3-1 S3-1 on the opposite of one end G3e positioned at third guide rail G3,1-1 carrier supports H1-1 is retreated and 1-2 carrier supports H1-2 is in place.In this case, wafer support C is transferred to from third guide rail G3 1-2 carrier support H1-2 and movement.Later, if 1-2 carrier supports H1-2 is moved on 2-2 grinding flat plates P2-2 And stop, then cells D is docked with the wafer support C for being contained in 1-2 carrier supports H1-2 and docks 8 ', is obtained from docking cells D Must make wafer rotate rotary driving force and pressurization wafer pneumatics supply while it is enterprising in 2-2 grinding flat plates P2-2 Row third grinding technics A5.
If completing third grinding technics, 3-1 position S3-1 of the wafer support C from 1-2 carrier supports H1-2 It is transferred to one end S2e of the second guide rail G2 and movement, 99 are moved along the second guide rail G2 and is stopped in 2-1 grinding flat plates P2-1 Only.Also, docking cells D carries out docking 8 ', and the is carried out while obtaining the supply of rotary driving force and pneumatics from docking cells D Four grinding technics A6.
As third implementation form above-mentioned, docked on 2-1 grinding flat plates P2-1 and 2-2 grinding flat plates P2-2 Direction 8 ' that cells D is docked with wafer support C on 1-1 grinding flat plates P1-1 and 1-2 grinding flat plates P1-2 to order Direction 8 that first D is docked with wafer support C is carrying out the first grinding technics and second grinding technics completely on the contrary, therefore Position and the position for carrying out third grinding technics and the 4th grinding technics, wafer support C is respectively in opposite side and to order First D is docked.
If completing the 4th grinding technics, wafer support C moves 99 along the second guide rail G2, is then contained in second The 2-2 carrier supports H2-2A7 moved on interface channel R5.Also, 2-2 carrier supports are contained in wafer support C The state of H2-2 detaches the first wafer from wafer support C in the second uninstalling portion UU2, and carries out prepared cleaning and then pass through First wafer W is transferred A8 by tipper by the first wafer W overturning 180 degrees and with the state of the overturning 180 degree to cleaning part X2.
Later, while the first wafer W is moved along the second flushing channel CL2 of cleaning part X2, in the cleaning mould of lamination A part in the block is above to carry out any one in contact cleaning and non-contact cleaning or more, to which neatly removal is stained on grinding The foreign matter A9 in face.In this way, the first wafer for terminating the treatment process of grinding technics and cleaning etc. is moved to wafer supply unit Xo It is dynamic, and it is transferred to next technique A10.
As described above, wafer processing system 2 according to the present utility model is similar to third implementation form above-mentioned, for one A wafer is carried out at the same time the grinding technics of four steps, because the grinding technics of four steps is in mutually different grinding flat plate It is carried out on P1-1, P1-2, P2-1, P2-2, so, even if utilizing mutually different lapping liquid or chemistry in each grinding technics Preparation carries out chemical mechanical milling tech, it may have can be not by anti-by the chemistry of mutually different lapping liquid or chemicals The advantages of grinding technics of four steps freely being carried out in the case of answering caused harmful effect, and can be made The entire movable passageway of wafer becomes simple effect.
Hereinafter, referring to Fig.1 at the wafer of 1 pair of the 5th implementation form according to wafer processing system 1 formed as described above Science and engineering skill illustrates.
As shown in figure 11, if carrying out the first wafer for the treatment of process from wafer supply unit Xo to placement section PP supply preparations A0, then the first wafer the first loading part LU1A1 is supplied to by transfer device RT.
At this point, being contained in first loading of the wafer support C of 2-1 carrier supports H2-1 on the second interface channel R5 Portion LU1 is moved, to obtain the supply of the first wafer from the first loading part LU1 and be equipped on wafer support C.Later, wafer carries Body C is moved to the positions the 1-2 S1-2 on the opposite of the other end S3e ' of the first guide rail G1, and from 2-1 carrier supports H2-1 To the first guide rail G1 movements, controlled by the current direction of the power supply 89 to being applied to coil 90, according to linear motor Principle moves 99 along the first imaginary line L1, and then the abrasion site on 1-1 grinding flat plates P1-1 stops, wherein coil 90 are set to frame F.
Later, docking cells D shown in fig. 6 close to 8 and is docked to the wafer support C of Fig. 5, can be to create Wafer support C supplies the environment of rotary driving force and pneumatics.Later, the grinding head CH for being installed on the downside of wafer support C is downward Side is mobile or the upward side movements of grinding flat plate P, the first wafer to be equipped on wafer support C become abradant surface and grinding flat plate The state that P is in contact.Also, the first wafer W carries out the first grinding technics A2 in 1-1 grinding flat plates P1-1.
Later, wafer support C moves 99 to one end S1e of the first guide rail G1 of the end as first movement channel R1 Afterwards, it by mode shown in Fig. 3, is moved from the positions 1-1 S1-1 to waiting 1-1 carrier supports H1-1.Then, it receives It is dissolved in the wafer support C of 1-1 carrier supports H1-1 and the first crystalline substance is carried out for 1-2 grinding flat plates P1-2 with such state Second grinding technics A3 of member.
If completing the second grinding technics, 1-1 carrier support H1-1 are to one end G3e's positioned at third guide rail G3 The positions the 3-1 S3-1 on opposite is moved, and wafer support C is transferred to third guide rail G3A4 from 1-1 carrier supports H1-1. Also, wafer support C multiplies third guide rail G3 movements 99, and being then moved to 2-2 from the other end G3e ' of third guide rail G3 carries Body support H2-2A5.
Later, the wafer support C of 2-2 carrier supports H2-2 is contained in the other end S2e ' positioned at the second guide rail G2 Opposite the positions 2-2 S2-2 move A6.
Also, wafer support C is shifted and is moved from 2-2 carrier support H2-2 to the second guide rail G2, is multiplied second and is led Stop on 2-1 grinding flat plates P2-1 while rail G2 movements, and is obtained so that wafer rotation by docking the docking of cells D Rotary driving force and pressurization wafer pneumatics supply, while on 2-1 grinding flat plates P2-1 carry out third grinding technics A7。
Also, wafer support C is ground in the state that the second guide rail G2 is transferred to 1-2 carrier supports H1-2 in 2-2 The 4th grinding technics A8 is carried out while polishing the rotary driving force and pneumatics that acquisition is supplied from docking cells D on plate P2-2.
It is ground in 1-1 here, docking the direction 8 ' that cells D is docked with wafer support C on 2-1 grinding flat plates P2-1 It is completely opposite to polish docking cells D and the direction 8 that wafer support C is docked on plate P1-1.Therefore, as shown in figure 4, carrying out first The position of grinding technics and second grinding technics, wafer support C carry out pair with cells D is docked from the side of wafer support C Connect, carry out third grinding technics and the 4th grinding technics position, wafer support C with dock cells D from wafer support C The other side docked.
Later, 1-2 carriers support H1-2 is to the 3-1 position S3-1 facing with one end G3e of third guide rail G3 It is mobile, and wafer support C is transferred to third guide rail G3 and mobile A9 from 1-2 carrier supports H1-2.
Later, the wafer support C equipped with the first wafer is accommodated in 2-1 loads again after third movable passageway R3 Body support H2-1A10, the state of 2-1 carrier supports H2-1 is accommodated in wafer support C, in the first uninstalling portion UU1 So that wafer W is detached from wafer support C and carried out after preparing cleaning, the first wafer is by tipper overturning 180 degree and with described The state of overturning 180 degree is transferred to the first flushing channel CL1A11 of cleaning part X2.
In addition, the second wafer that treatment process is supplied to after the first wafer be carried out similarly it is identical as the first wafer Slave A0 to A9 treatment process.Later, the wafer support C equipped with the second wafer after third movable passageway R3 again by 2-2 carrier support H2-2 are contained in, to be accommodated in the state of 2-2 carrier supports H2-2 with wafer support C, Second uninstalling portion UU2 so that wafer W be detached from wafer support C and carries out after preparing cleaning that the second wafer is overturn by tipper 180 degree and the second flushing channel CL2B11 that cleaning part X2 is transferred to the state of the overturning 180 degree.
Later, cleaning module C1-1, the C1-2 of the first wafer on the first flushing channel CL1 carry out cleaning, later Cleaning module C2-1, C2-2 on the second flushing channel CL2 of the second wafer carry out cleaning.In this way, for supplying successively The wafer given, grinding technics carry out in four steps in order on four grinding flat plates P1-1, P1-2, P2-1, P2-2, and The wafer of completion grinding technics is transferred to cleaning module C1-1, C1-2 and the second cleaning on the first flushing channel CL1 in turn Cleaning module C2-1, C2-2 on channel C L2 simultaneously carry out cleaning A12, B12.In this way, terminating grinding technics and cleaning etc. First wafer and the second wafer for the treatment of process etc. are moved to wafer supply unit Xo, and are transferred to next technique A13, B13.
As described above, wafer processing system 2 according to the present utility model is carried out at the same time four steps for a wafer Grinding technics, because the grinding technics of four steps carries out on mutually different grinding flat plate P1-1, P1-2, P2-1, P2-2, So even if carrying out chemical mechanical milling tech using mutually different lapping liquid or chemicals in each grinding technics, Having can be not by the harmful effect caused by the chemical reaction of mutually different lapping liquid or chemicals the case where yet Under the advantages of freely carrying out the grinding technics of four steps.
Moreover, the treatment process of the 5th implementation form according to the present utility model is compared with third implementation form, knot The wafer of beam grinding technics can not only carry out cleaning within the more fully time, but also concentrate on first with by load The third implementation form of uninstalling portion UU1 is compared, and the effect that can be obtained is, even if unloading process and the preparation carried out herein Cleaning is necessary to ensure that the longer time, but the whole process time will not increase.
Hereinafter, referring to Fig.1 at the wafer of 2 pairs of the 6th implementation forms according to wafer processing system 1 formed as described above Science and engineering skill illustrates.
As shown in figure 12, if carrying out the first wafer for the treatment of process from wafer supply unit Xo to placement section PP supply preparations A0, then the first wafer the first loading part LU1A1 is supplied to by transfer device RT.
At this point, being contained in first loading of the wafer support C of 2-1 carrier supports H2-1 on the second interface channel R5 Portion LU1 is moved, to obtain the supply of the first wafer from the first loading part LU1 and be equipped on wafer support C.Later, wafer carries Body C is moved to the positions the 1-2 S1-2 on the opposite of the other end S3e ' of the first guide rail G1, and from 2-1 carrier supports H2-1 To the first guide rail G1 movements, controlled by the current direction of the power supply 89 to being applied to coil 90, according to linear motor Principle moves 99 along the first imaginary line L1, and then the abrasion site on 1-1 grinding flat plates P1-1 stops, wherein coil 90 are set to frame F.
Later, docking cells D shown in fig. 6 close to 8 and is docked to the wafer support C of Fig. 5, can be to create Wafer support C supplies the environment of rotary driving force and pneumatics.Later, the grinding head CH for being installed on the downside of wafer support C is downward Side is mobile or the upward side movements of grinding flat plate P, the first wafer to be equipped on wafer support C become abradant surface and grinding flat plate The state that P is in contact.Also, the first wafer W carries out the first grinding technics A2 in 1-1 grinding flat plates P1-1.
Later, wafer support C moves 99 to one end S1e of the first guide rail G1 of the end as first movement channel R1 Afterwards, it by mode shown in Fig. 3, is moved from the positions 1-1 S1-1 to waiting 1-1 carrier supports H1-1.Then, it receives It is dissolved in the wafer support C of 1-1 carrier supports H1-1 and the first crystalline substance is carried out for 1-2 grinding flat plates P1-2 with such state Second grinding technics A3 of member.
If completing the second grinding technics, 1-1 carrier support H1-1 are to one end G3e's positioned at third guide rail G3 The positions the 3-1 S3-1 on opposite is moved, and wafer support C is transferred to third guide rail G3A4 from 1-1 carrier supports H1-1. Also, wafer support C multiplies third guide rail G3 movements 99, and being then moved to 2-1 from the other end G3e ' of third guide rail G3 carries Body support H2-1A5.
Later, it is mobile to the first uninstalling portion UU1 and make the to be contained in the wafer support C of 2-1 carrier supports H2-1 One wafer detaches, and then carries out prepared cleaning and overturns 180 degree, so that abradant surface is towards upside A6.Later, the first wafer W transfers A8 after cleaning module C1-1, C1-2 of the first flushing channel CL1 carry out cleaning A7 to wafer supply unit Xo.
Later, wafer supply unit Xo will carry out the first grinding technics and the second grinding technics and cleaning again First wafer supplies to placement section PP A9, transfer device RT and transfers the first wafer of placement section PP to the second loading part LU2, Second loading part LU2 so that the first wafer be equipped on by the form of the wafer support C of 2-2 carrier supports H2-2 receiving into Luggage carries A10.Later, wafer support C is moved to the positions the 2-2 S2-2 on the opposite of the other end S2e ' of the second guide rail G2, so Afterwards from 2-2 carrier support H2-2 to the second guide rail G2 movements, pass through the current direction of the power supply 89 to being applied to coil 90 It is controlled, 99 is moved along the second imaginary line L12 according to the principle of linear motor, then on 2-1 grinding flat plates P2-1 Abrasion site stop, and the docking 8 of docking cells D is to the state as the supply for obtaining rotary driving force and pneumatics, wherein Coil 90 is set to frame F.Later, the grinding head CH for being installed on the downside of wafer support C move downward or grinding flat plate P to Upside is moved, and the first wafer to be equipped on wafer support C becomes the shape that abradant surface is in contact with 2-1 grinding flat plates P2-1 State, also, the first wafer W carries out third grinding technics A11 in 2-1 grinding flat plates P2-1.
Later, wafer support C moves 99 to one end S2e of the second guide rail G2 of the end as the second movable passageway R2 Afterwards, it by mode shown in Fig. 3, is moved from the positions 2-1 S2-1 to waiting 1-2 carrier supports H1-2.Then, it receives It is dissolved in the wafer support C of 1-2 carrier supports H1-2 and the first crystalline substance is carried out for 2-2 grinding flat plates P1-2 with such state 4th grinding technics A12 of member.
If completing the 4th grinding technics, 1-2 carrier support H1-2 are to one end G3e's positioned at third guide rail G3 The positions the 3-1 S3-1 on opposite is moved, and wafer support C is transferred to third guide rail from 1-2 carrier supports H1-2 G3A13.Also, wafer support C multiplies third guide rail G3 movement 99, is then moved to the from the other end G3e ' of third guide rail G3 2-2 carrier supports H2-2A14.
Later, 2-2 carriers support H2-2 is mobile to the second uninstalling portion UU2 and makes the first wafer from wafer support C Then unloading carries out prepared cleaning and overturns 180 degree again, so that wafer abradant surface is towards upside.Later, the first wafer W is transferred to cleaning part X2A15.
Later, while the first wafer W is moved along the second flushing channel CL2 of cleaning part X2, in the cleaning mould of lamination A part in the block is above to carry out any one in contact cleaning and non-contact cleaning or more, to which neatly removal is stained on grinding The foreign matter A16 in face.In this way, the first wafer for terminating the treatment process of grinding technics and cleaning etc. is moved to wafer supply unit Xo It is dynamic, and it is transferred to next technique A17.
As described above, wafer processing system 2 according to the present utility model is carried out at the same time four steps for a wafer Grinding technics, because the grinding technics of four steps carries out on mutually different grinding flat plate P1-1, P1-2, P2-1, P2-2, So even if carrying out chemical mechanical milling tech using mutually different lapping liquid or chemicals in each grinding technics, Having can be not by the harmful effect caused by the chemical reaction of mutually different lapping liquid or chemicals the case where yet Under the advantages of freely carrying out the grinding technics of four steps.
Moreover, for the treatment process of the 6th implementation form according to the present utility model, there are following characteristics：Into Cleaning is carried out after the first grinding technics of row and the second grinding technics, carries out third grinding technics and the 4th grinding work again later Skill.Accordingly, the chemicals (including lapping liquid) used in the first grinding technics and the second grinding technics should not devote In the case of the necessity of third grinding technics is very high, even if not increasing cleaning equipment additionally, using existing cleaning equipment, As it appears from the above, through over cleaning technique after the second grinding technics, third grinding technics is then devoted, so as to more determine Ground ensures the reliability and accuracy of grinding technics.
Hereinafter, referring to Fig.1 at the wafer of 3 pairs of the 7th implementation forms according to wafer processing system 1 formed as described above Science and engineering skill illustrates.
As shown in figure 13, if carrying out the first wafer for the treatment of process from wafer supply unit Xo to placement section PP supply preparations A0, then the first wafer the first loading part LU1A1 is supplied to by transfer device RT.
At this point, being contained in first loading of the wafer support C of 2-1 carrier supports H2-1 on the second interface channel R5 Portion LU1 is moved, to obtain the supply of the first wafer from the first loading part LU1 and be equipped on wafer support C.Later, wafer carries Body C is moved to the positions the 1-2 S1-2 on the opposite of the other end S3e ' of the first guide rail G1, and from 2-1 carrier supports H2-1 To the first guide rail G1 movements, controlled by the current direction of the power supply 89 to being applied to coil 90, according to linear motor Principle moves 99 along the first imaginary line L1, and then the abrasion site on 1-1 grinding flat plates P1-1 stops, wherein coil 90 are set to frame F.
Later, docking cells D shown in fig. 6 close to 8 and is docked to the wafer support C of Fig. 5, can be to create Wafer support C supplies the environment of rotary driving force and pneumatics.Later, the grinding head CH for being installed on the downside of wafer support C is downward Side is mobile or the upward side movements of grinding flat plate P, the first wafer to be equipped on wafer support C become abradant surface and grinding flat plate The state that P is in contact.Also, the first wafer W carries out the first grinding technics A2 in 1-1 grinding flat plates P1-1.
Later, wafer support C moves 99 to one end S1e of the first guide rail G1 of the end as first movement channel R1 Afterwards, it by mode shown in Fig. 3, is moved from the positions 1-1 S1-1 to waiting 1-1 carrier supports H1-1.Then, it receives It is dissolved in the wafer support C of 1-1 carrier supports H1-1 and the first crystalline substance is carried out for 1-2 grinding flat plates P1-2 with such state Second grinding technics A3 of member.
If completing the second grinding technics, 1-1 carrier support H1-1 are to one end G3e's positioned at third guide rail G3 The positions the 3-1 S3-1 on opposite is moved, and wafer support C is transferred to third guide rail G3A4 from 1-1 carrier supports H1-1. Also, wafer support C multiplies third guide rail G3 movements 99, and being then moved to 2-2 from the other end G3e ' of third guide rail G3 carries Body support H2-1A5.
Here, being provided with the wafer station for placing wafer in the opposite side S3-2 of the other end G3e ' of third guide rail G3 UX.Thus, the first wafer is unloaded and is placed by the wafer support C moved from third guide rail G3 to 2-2 carrier supports H2-1 In wafer station UX.Also, the wafer support C of 2-2 carrier supports H2-1 is contained in order to carry the second wafer newly provided And it is moved to the first loading part LU1.In this way, carrying the wafer of the first wafer for the first grinding technics and the second grinding technics Support C by the first wafer be positioned over wafer station UX and in a relatively short period of time from the first loading part LU1 carry preparation carry out it is next Second wafer of a treatment process, therefore, effect are to shorten the integrated artistic time.
In addition, the first wafer for being offloaded to wafer station UX is loaded and carries to being contained in 2-2 carrier supports H2-2 Again another the second wafer carrier.Also, the second wafer support C is to the opposite of the other end G2e ' positioned at the second guide rail G2 The positions 2-2 S2-2 is moved.Also, the second wafer carrier is transferred to the second guide rail G2 from 2-2 carrier supports H2-2 and moves It is dynamic, multiply the second guide rail G movements, then stops on 2-1 grinding flat plates P2-1, the docking by docking cells D is made The supply of the rotary driving force of wafer rotation and the pneumatics of pressurization wafer is obtained, while third is carried out in 2-1 grinding flat plates P2-1 Grinding technics A7.
Also, the state that the second wafer carrier is shifted from one end S2e of the second guide rail G2 to 1-2 carrier supports H1-2 Under, while obtaining the supply of rotary driving force and pneumatics from docking cells D on 2-2 grinding flat plates P2-2 the 4th grind Grinding process A8.
Here, docking the direction 8 ' docked with the second wafer carrier of cells D on 2-1 grinding flat plates P2-1 and in 1- It is completely opposite with the direction 8 that wafer support C is docked that cells D is docked on 1 grinding flat plate P1-1.Therefore, as shown in figure 4, carrying out The position of first grinding technics and second grinding technics, wafer support C with dock cells D from the side of wafer support C into Row docking, carry out third grinding technics and the 4th grinding technics position, wafer support C with dock cells D from second It is docked the other side of wafer carrier.
Later, 1-2 carriers support H1-2 is moved to the positions 3-1 S3-1 facing one end G3e of third guide rail G It is dynamic, and the second wafer support C is transferred to third guide rail G and mobile A9 from 1-2 carrier supports H1-2.
Later, the second wafer support C equipped with the first wafer is received again by third movable passageway R3 to 2-1 Any one A10 in carrier support H2-1 and 2-2 carrier support H2-2.At this point, the first wafer can also be clear to first It washes any one direction in channel C L1 and the second flushing channel CL2 to be transferred, and carries out the wafer for the treatment of process in order one A ground is transferred to the first flushing channel CL1 and the second flushing channel CL2 and is cleaned in turn, therefore, if it is The sequence that one wafer is cleaned in cleaning module C1-1, C1-2 of the first flushing channel CL1, then the second wafer carrier is to 2- 1 carrier support H2-1 movements, cleaning module C2-1, C2-2 if it is the first wafer in the second flushing channel CL2 are carried out clearly The sequence washed, then the second wafer carrier to 2-2 carrier supports H2-2 move.
Also, first that just any one is moved into 2-1 carrier support H2-1 and 2-2 carrier supports H2-2 For wafer, in the 2-1 carrier support H2-1 and 2-2 carrier supports H2-2 moved any one Uninstalling portion UU1, UU2 of moving area carries out prepared cleaning after being detached from the second wafer carrier.Also, uninstalling portion UU with It overturns cleaning module of the state of 180 degree in flushing channel CL1, CL2 of cleaning part X2 and carries out cleaning A12, B12, then It is transferred to wafer supply unit Xo A13, B13.
As described above, wafer processing system 2 according to the present utility model is carried out at the same time four steps for a wafer Grinding technics, because the grinding technics of four steps carries out on mutually different grinding flat plate P1-1, P1-2, P2-1, P2-2, So even if carrying out chemical mechanical milling tech using mutually different lapping liquid or chemicals in each grinding technics, Having can be not by the harmful effect caused by the chemical reaction of mutually different lapping liquid or chemicals the case where yet Under the advantages of freely carrying out the grinding technics of four steps.
In particular, the treatment process of the 7th implementation form according to the present utility model, compared to the 5th implementation form, in third The other end S3e ' of guide rail G3 is provided with the wafer station UX that can be placed wafer and load wafer, and therefore, wafer carrier does not continue Hold the wafer for terminating the first grinding technics and the second grinding technics, but directly unload and place to wafer station UX, and can be with Carry it is next be put into the wafer in treatment process to be carried out continuously treatment process, and then raising disposed of in its entirety can be obtained The effect of efficiency.At the same time, carry out during the first grinding technics and the second grinding technics used wafer carrier and into Second wafer carrier used in during row third grinding technics and the 4th grinding technics only moves in defined channel, therefore, Following effect can be obtained：It is easy to the mobile control of wafer carrier and reduces the possibility that control error occurs.
Hereinafter, referring to Fig.1 at the wafer of 4 pairs of the 8th implementation forms according to wafer processing system 1 formed as described above Science and engineering skill illustrates.
As shown in figure 14, if carrying out the first wafer for the treatment of process from wafer supply unit Xo to placement section PP supply preparations A0, then the first wafer the first loading part LU1A1 is supplied to by transfer device RT.
At this point, being contained in first loading of the wafer support C of 2-1 carrier supports H2-1 on the second interface channel R5 Portion LU1 is moved, to obtain the supply of the first wafer from the first loading part LU1 and be equipped on wafer support C.Later, wafer carries Body C is moved to the positions the 1-2 S1-2 on the opposite of the other end S3e ' of the first guide rail G1, and from 2-1 carrier supports H2-1 To the first guide rail G1 movements, controlled by the current direction of the power supply 89 to being applied to coil 90, according to linear motor Principle moves 99 along the first imaginary line L1, and then the abrasion site on 1-1 grinding flat plates P1-1 stops, wherein coil 90 are set to frame F.
Later, docking cells D shown in fig. 6 close to 8 and is docked to the wafer support C of Fig. 5, can be to create Wafer support C supplies the environment of rotary driving force and pneumatics.Later, the grinding head CH for being installed on the downside of wafer support C is downward Side is mobile or the upward side movements of grinding flat plate P, the first wafer to be equipped on wafer support C become abradant surface and grinding flat plate The state that P is in contact.Also, the first wafer W carries out the first grinding technics A2 in 1-1 grinding flat plates P1-1.
Later, wafer support C moves 99 to one end S1e of the first guide rail G1 of the end as first movement channel R1 Afterwards, it by mode shown in Fig. 3, is moved from the positions 1-1 S1-1 to waiting 1-1 carrier supports H1-1.Then, it receives It is dissolved in the wafer support C of 1-1 carrier supports H1-1 and the first crystalline substance is carried out for 1-2 grinding flat plates P1-2 with such state Second grinding technics A3 of member.
If completing the second grinding technics, 1-1 carrier support H1-1 are to one end G3e's positioned at third guide rail G3 The positions the 3-1 S3-1 on opposite is moved, and wafer support C is transferred to third guide rail G3A4 from 1-1 carrier supports H1-1. Also, wafer support C multiplies third guide rail G3 movements 99, and being then moved to 2-2 from the other end G3e ' of third guide rail G3 carries Body support H2-1A5.
Later, the wafer support C of 2-2 carrier supports H2-2 is contained in the other end G2e ' positioned at the second guide rail G2 Opposite the positions 2-2 S2-2 move A6.
Also, wafer support C is shifted and is moved from 2-2 carrier support H2-2 to the second guide rail G2, is multiplied second and is led Stop on 2-1 grinding flat plates P2-1 while rail G movements, and is obtained so that wafer rotation by docking the docking of cells D Rotary driving force and pressurization wafer pneumatics supply, while on 2-1 grinding flat plates P2-1 carry out third grinding technics A7。
Also, wafer support C is ground in the state that the second guide rail G2 is transferred to 1-2 carrier supports H1-2 in 2-2 The 4th grinding technics A8 is carried out while polishing the rotary driving force and pneumatics that acquisition is supplied from docking cells D on plate P2-2.
It is ground in 1-1 here, docking the direction 8 ' that cells D is docked with wafer support C on 2-1 grinding flat plates P2-1 It is completely opposite to polish docking cells D and the direction 8 that wafer support C is docked on plate P1-1.Therefore, as shown in figure 4, carrying out first The position of grinding technics and second grinding technics, wafer support C carry out pair with cells D is docked from the side of wafer support C Connect, carry out third grinding technics and the 4th grinding technics position, wafer support C with dock cells D from wafer support C The other side docked.
Later, 1-2 carriers support H1-2 is to the 3-1 position S3-1 facing with one end G3e of third guide rail G3 It is mobile, and wafer support C is transferred to third guide rail G3 and mobile A9 from 1-2 carrier supports H1-2.
Later, the wafer support C equipped with the first wafer is accommodated in 2-1 loads again after third movable passageway R3 Body support H2-1A10, the state of 2-1 carrier supports H2-1 is accommodated in wafer support C, in the first uninstalling portion UU1 Wafer W is detached from wafer support C and is carried out after preparing cleaning, the first wafer is overturn 180 degree by tipper and turned over described The state of turnback is transferred to the first flushing channel CL1A11 of cleaning part X2.
In addition, the second wafer that treatment process is supplied to after the first wafer be carried out similarly it is identical as the first wafer Slave A0 to A9 treatment process.Later, the wafer support C equipped with the second wafer is received again by third movable passageway R3 2-2 carrier support H2-2 are dissolved in, the state of 2-2 carrier supports H2-2 is accommodated in wafer support C, in the first dress Any one in load portion LU1 and the first uninstalling portion UU1 detaches wafer W from wafer support C.Also, divided from wafer support C From the second wafer by transfer the humanoid state of machine transmission device RT be transferred to the second uninstalling portion UU2B11-1, B11-2.According to This, can obtain following effect：Even if not so that the composition of 2-2 carrier supports H2-2 is moved to the second uninstalling portion U22 It can be with.
Later, after the second uninstalling portion UU2 carries out the preparation cleaning of the second wafer, the second wafer is to be reversed machine overturning The state of 180 degree is transferred to the second flushing channel CL2B11 of cleaning part X2.
Later, cleaning module C1-1, the C1-2 of the first wafer on the first flushing channel CL1 carry out cleaning, later Cleaning module C2-1, C2-2 on the second flushing channel CL1 of the second wafer carry out cleaning.In this way, for supplying successively The wafer given, grinding technics carry out in four steps in order on four grinding flat plates P1-1, P1-2, P2-1, P2-2, and The wafer of completion grinding technics is transferred to cleaning module C1-1, C1-2 and the second cleaning on the first flushing channel CL1 in turn Cleaning module C2-1, C2-2 on channel C L2 simultaneously carry out cleaning A12, B12.
Also, first wafer and the second wafer of the treatment process for terminating grinding technics and cleaning etc. etc. are supplied to wafer It is moved to portion Xo, and is transferred to next technique A13, B13.
As described above, wafer processing system 2 according to the present utility model is carried out at the same time four steps for a wafer Grinding technics, because the grinding technics of four steps carries out on mutually different grinding flat plate P1-1, P1-2, P2-1, P2-2, So even if carrying out chemical mechanical milling tech using mutually different lapping liquid or chemicals in each grinding technics, Having can be not by the harmful effect caused by the chemical reaction of mutually different lapping liquid or chemicals the case where yet Under the advantages of freely carrying out the grinding technics of four steps.
Moreover, transfer device RT is configured to transfer by the treatment process of the 8th implementation form according to the present utility model The moving range of 2-2 carrier supports H2-2 can be contracted in the second guide rail G2 and third guide rail G3 by robot form Between dealing form, and the unloading process of wafer all carries out on 2-1 carrier supports, thus, it is possible to obtain control The advantages of system becomes simple.
It can be utilized according to the wafer processing system 1 of the utility model formed as described above and be set as a configuration structure Wafer processing system 1 carry out a variety of grinding technics and cleaning for wafer, thus, it is possible to obtain advantageous effects exist In the type etc. of the chemicals used in the grinding according to wafer is neatly coped with.
Most of all, in the utility model, the first round-trip connection track CR1 of wafer carrier is to pass through grinding flat plate The form of upside configures, and the state for being accommodated in wafer carrier carrier support is ground work on grinding flat plate Skill, thus, it is possible to obtain following advantageous effects：A variety for the treatment of process can be carried out in grind section X1 by a structure, simultaneously So that the length L of the area occupied by grind section X1 substantially shortens compared with prior art.
Also, in the region of loading or unloading wafer, it is configured with wafer station on the opposite of the other end of third guide rail, to Wafer carrier does not continue to hold the wafer for terminating the first grinding technics and the second grinding technics, but directly unloads and place to crystalline substance Member station UX, and can carry it is next be put into the wafer in treatment process to be carried out continuously treatment process, and then can obtain Obtain following effect：The effect of overall treatment efficiency is improved, and the control of wafer carrier becomes simple and be easy to the shifting of wafer carrier It is dynamic to control and prevent to control error.
In other words, the utility model can obtain following advantageous effects：So that occupied by semiconductor production line A variety of grinding technics can also be carried out while space-minimized according to the state or type of wafer.
The utility model is illustrated above by preferred embodiment, but the utility model not only limits In the specific embodiment, the technological thought that is previously mentioned in the present invention and specifically record in detail in the claims It can be modified with variform in range, changes and modifications.
Label declaration
W：Wafer R1：First movement channel
R2：Second movable passageway R3：Third movable passageway
R4：First interface channel R5：Second interface channel
G1：First guide rail G2：Second guide rail
G3：Third guide rail CR1：First connection track
CR2：Second connection track UU：Uninstalling portion
LU：Loading part P1-1：1-1 grinding flat plates
P1-2：1-2 grinding flat plates P2-1：2-1 grinding flat plates
P2-2：2-2 grinding flat plates CL1：First flushing channel
CL2：Second flushing channel 1：Wafer processing system
D：Dock unit C：Wafer carrier
H：Carrier support H1-1：1-1 carrier supports
H1-2：1-2 carrier supports H2-1：2-1 carrier supports
H2-2：2-2 carrier supports

Claims (17)

1. a kind of wafer processing system comprising：
Wafer supply unit is used to supply the wafer that will carry out treatment process；
Grind section obtains the supply of the wafer from the wafer supply unit, and is ground to the wafer；
Cleaning part is configured between the wafer supply unit and the grind section, is being configured at the first of the first flushing channel Cleaning module and to be configured at any one in the second cleaning module of the second flushing channel above to being ground in the grind section The wafer cleaned, and first flushing channel and second flushing channel are spaced from each other configuration；
Transfer device is set to the cleaning part, so that the wafer is transferred to the grinding from the wafer supply unit Portion.
2. wafer processing system according to claim 1, which is characterized in that the grind section includes：
Loading part obtains the supply of the wafer from the wafer supply unit and carries the wafer to wafer carrier；
Wafer carrier, the state to be held in the wafer that the loading part is carried are moved；
1-1 grinding flat plates and 1-2 grinding flat plates are configured at the first imaginary line, the wafer carrier transportable One movable passageway belongs to the first imaginary line；
2-1 grinding flat plates and 2-2 grinding flat plates are configured at the second imaginary line, the wafer carrier transportable Two movable passageways belong to the second imaginary line, and second imaginary line separates configuration with first imaginary line；
Between the first movement channel and second movable passageway, the transportable third movement of wafer carrier is logical Road is configured along third imaginary line；
1-1 carrier supports, with the state equipped with the wafer carrier in one end phase with the first movement channel In the first interface channel between the positions 1-1 and the positions 2-1 facing with one end of the second movable passageway that face It is moved back and forth between the positions the 1-1 and the positions 3-1 facing with one end of the third movable passageway, so that The wafer carrier comes and goes between the first movement channel and the third movable passageway；
1-2 carrier supports, with the state equipped with the wafer carrier in first interface channel described It is moved back and forth between the positions 3-1 and the positions the 2-1, so that the wafer carrier is in the third movable passageway and institute It states and comes and goes between the second movable passageway；
2-1 carrier supports, with the state equipped with the wafer carrier in the other end with the first movement channel Second between the facing positions 1-2 and the positions 2-2 facing with the other end of second movable passageway connect It is moved back and forth between the positions the 1-2 and the positions 3-2 facing with one end of the third movable passageway in channel, So that the wafer carrier comes and goes between the first movement channel and the third movable passageway；
2-2 carrier supports, with the state equipped with the wafer carrier in second interface channel described It is moved back and forth between the positions 3-2 and the positions the 2-2, so that the wafer carrier is in the third movable passageway and institute It states and comes and goes between the second movable passageway；
Uninstalling portion is used to unload the wafer from the wafer carrier.
3. wafer processing system according to claim 2, which is characterized in that
The uninstalling portion is configured on second interface channel.
4. wafer processing system according to claim 2, which is characterized in that
The state of the 2-1 carriers support or 2-2 carrier supports is equipped on the wafer carrier so that the crystalline substance Member is unloaded from the wafer carrier.
5. wafer processing system according to claim 2, which is characterized in that
Any one in the 1-2 grinding flat plates and the 2-2 grinding flat plates is above to be configured at first interface channel On.
6. wafer processing system according to claim 2, which is characterized in that
The wafer carrier is carried out with the state for being equipped on the 1-1 carrier supports on the 1-2 grinding flat plates Grinding technics.
7. wafer processing system according to claim 2, which is characterized in that
The first movement channel determines that channel, second movement are logical by the first guide rail being arranged along first imaginary line Road determines channel by the second guide rail being arranged along second imaginary line, and the third movable passageway is by along third vacation Think that the third guide rail of line setting determines channel.
8. wafer processing system according to claim 2, which is characterized in that
First interface channel determines that channel, second interface channel are determined by the second connection track by the first connection track Channel.
9. wafer processing system as claimed in any of claims 2 to 8, which is characterized in that
The loading part includes the first loading part and the second loading part, and the first loading part is adjacent with first imaginary line, and second Loading part is adjacent with second imaginary line；
The uninstalling portion includes the first uninstalling portion and the second uninstalling portion, and the first uninstalling portion is adjacent with first imaginary line, and second Uninstalling portion is adjacent with second imaginary line；
First wafer is carried in first loading part to the crystalline substance from the wafer supply unit after the transfer device First carrier, and in the 1-1 grinding flat plates and the 1-2 grinding flat plates while moved along first imaginary line The first grinding technics and the second grinding technics are carried out respectively, are moved successively by the 1-1 carriers support and the third It is unloaded in first uninstalling portion behind channel, is obtained in the cleaning module for first flushing channel for being configured at the cleaning part It is discharged after to cleaning；
Second wafer is carried in second loading part to the crystalline substance from the wafer supply unit after the transfer device First carrier, and in the 2-1 grinding flat plates and the 2-2 grinding flat plates while moved along second imaginary line The first grinding technics and the second grinding technics are carried out respectively, are moved successively by the 1-2 carriers support and the third It is unloaded in first uninstalling portion behind channel, is obtained in the cleaning module for second flushing channel for being configured at the cleaning part It is discharged after to cleaning.
10. wafer processing system as claimed in any of claims 2 to 8, which is characterized in that
The loading part includes the first loading part and the second loading part, and the first loading part is adjacent with first imaginary line, and second Loading part is adjacent with second imaginary line；
The uninstalling portion includes the first uninstalling portion and the second uninstalling portion, and the first uninstalling portion is adjacent with first imaginary line, and second Uninstalling portion is adjacent with second imaginary line；
First wafer is carried in first loading part to the crystalline substance from the wafer supply unit after the transfer device First carrier, and in the 1-1 grinding flat plates and the 1-2 grinding flat plates while moved along first imaginary line The first grinding technics and the second grinding technics are carried out respectively, are moved successively by the 1-1 carriers support and the third Behind channel, appoint in the 1-1 grinding flat plates and the 1-2 grinding flat plates while movement again along the first imaginary line One progress third grinding technics of meaning, successively after the 1-1 carriers support and the third movable passageway, described First uninstalling portion is unloaded, and is obtained clearly in first cleaning module for first flushing channel for being configured at the cleaning part It is discharged after washing；
Second wafer is carried in second loading part to the crystalline substance from the wafer supply unit after the transfer device First carrier, and in the 2-1 grinding flat plates and the 2-2 grinding flat plates while moved along second imaginary line The first grinding technics and the second grinding technics are carried out respectively, are moved successively by the 1-2 carriers support and the third Behind channel, appoint in the 2-1 grinding flat plates and the 2-2 grinding flat plates while movement again along the second imaginary line One progress third grinding technics of meaning, successively described after the 1-2 carriers support and the third movable passageway First uninstalling portion is unloaded, and is obtained clearly in second cleaning module for second flushing channel for being configured at the cleaning part It is discharged after washing.
11. wafer processing system as claimed in any of claims 2 to 8, which is characterized in that
First wafer is carried to the wafer in the loading part after the transfer device from the wafer supply unit and is carried Body, and while moved along first imaginary line, in the 1-1 grinding flat plates and the 1-2 grinding flat plates point The first grinding technics and the second grinding technics are not carried out, it is logical by the 1-1 carriers support and third movement successively Behind road,
While movement along second imaginary line after the 2-2 carrier supports, in the 2-1 grinding flat plates Third grinding technics and the 4th grinding technics are carried out respectively with the 2-2 grinding flat plates, pass through the 1-2 carrier branch successively It after holding frame and the third movable passageway, is unloaded in the uninstalling portion, in first cleaning for being configured at the cleaning part First cleaning module in channel is discharged after being cleaned.
12. wafer processing system according to claim 11, which is characterized in that
It is not provided with drive motor in the wafer carrier inside, in the position docking docking unit for being ground technique, thus Any one in rotary driving force and pneumatics or more is supplied to the wafer carrier,
For the wafer carrier, in the position for carrying out first grinding technics and second grinding technics, the docking Unit is docked with the wafer carrier from side, in the position for carrying out the third grinding technics and the 4th grinding technics It sets, the docking unit is docked with the wafer carrier from the other side.
13. wafer processing system as claimed in any of claims 2 to 8, which is characterized in that
First wafer is carried to the wafer in the loading part after the transfer device from the wafer supply unit and is carried Body, and while moved along first imaginary line, in the 1-1 grinding flat plates and the 1-2 grinding flat plates point Do not carry out the first grinding technics and the second grinding technics, pass through successively the 1-1 carriers support and third movable passageway and After the 1-2 carrier supports,
While movement along second imaginary line, the 2-2 grinding flat plates and the 2-1 grinding flat plates respectively into Row third grinding technics and the 4th grinding technics, then the wafer carrier moved to the 2-2 carrier supports, described One wafer is unloaded in the uninstalling portion, in the second cleaning mould for second flushing channel for being configured at the cleaning part Block is discharged after being cleaned.
14. wafer processing system as claimed in any of claims 2 to 8, which is characterized in that
First wafer is carried to the wafer in the loading part after the transfer device from the wafer supply unit and is carried Body, and while moved along first imaginary line, in the 1-1 grinding flat plates and the 1-2 grinding flat plates point The first grinding technics and the second grinding technics are not carried out, successively after the 1-1 carriers support and third movable passageway,
While via being moved along second imaginary line after the 2-1 carrier supports, in the 2-1 grinding flat plates Third grinding technics and the 4th grinding technics are carried out respectively with the 2-2 grinding flat plates, pass through the 1-2 carrier branch successively After holding frame and the third movable passageway, the wafer carrier is moved to the 2-1 carrier supports, and first wafer exists The uninstalling portion is unloaded from the wafer carrier, described the first of first flushing channel for being configured at the cleaning part Cleaning module is discharged after being cleaned,
Second wafer that treatment process is carried out after first wafer is being configured at described the first of the cleaning part First cleaning module of flushing channel is discharged after being cleaned.
15. wafer processing system as claimed in any of claims 2 to 8, which is characterized in that
The loading part includes the first loading part and the second loading part, and the first loading part is adjacent with first imaginary line, described Second loading part is adjacent with second imaginary line；
The uninstalling portion includes the first uninstalling portion and the second uninstalling portion, and the first uninstalling portion is adjacent with first imaginary line, and second Uninstalling portion is adjacent with second imaginary line；
First wafer is carried in first loading part to the crystalline substance from the wafer supply unit after the transfer device First carrier, and in the 1-1 grinding flat plates and the 1-2 grinding flat plates while moved along first imaginary line The first grinding technics and the second grinding technics are carried out respectively, are moved successively by the 1-1 carriers support and the third It is unloaded in first uninstalling portion behind channel, described first in first flushing channel for being configured at the cleaning part is clear Mold cleaning block is cleaned,
Second wafer is carried in second loading part to wafer carrier after the transfer device, and along described Third grinding technics is carried out respectively in the 2-1 grinding flat plates and the 2-2 grinding flat plates while two imaginary lines move With the 4th grinding technics, unloaded successively described second after the 1-2 carriers support and the third movable passageway Portion is unloaded, and is arranged after second cleaning module for second flushing channel for being configured at the cleaning part is cleaned Go out.
16. wafer processing system as claimed in any of claims 2 to 8, which is characterized in that
The loading part includes the first loading part and the second loading part, and the first loading part is adjacent with first imaginary line, described Second loading part is adjacent with second imaginary line；
The uninstalling portion includes the first uninstalling portion and the second uninstalling portion, and the first uninstalling portion is adjacent with first imaginary line, and second Uninstalling portion is adjacent with second imaginary line；
Include wafer station between the 2-1 carriers support and the 2-2 carrier supports, wafer station is used for the crystalline substance Member is unloaded from the wafer carrier；
First wafer is carried in first loading part to the crystalline substance from the wafer supply unit after the transfer device First carrier, and in the 1-1 grinding flat plates and the 1-2 grinding flat plates while moved along first imaginary line The first grinding technics and the second grinding technics are carried out respectively, are moved successively by the 1-1 carriers support and the third The wafer station is offloaded to behind channel；
First wafer is carried from the wafer station to other wafer carriers, while movement along second imaginary line Third grinding technics and the 4th grinding technics are carried out respectively in the 2-1 grinding flat plates and the 2-2 grinding flat plates, successively It is unloaded in second uninstalling portion after the 1-2 carriers support and the third movable passageway, being configured at State second flushing channel of cleaning part second cleaning module cleaned after be discharged.
17. wafer processing system as claimed in any of claims 2 to 8, which is characterized in that
First wafer is carried to the wafer in the loading part after the transfer device from the wafer supply unit and is carried Body, and distinguish in the 1-1 grinding flat plates and the 1-2 grinding flat plates while moved along first imaginary line The first grinding technics and the second grinding technics are carried out, passes through the 1-1 carriers support and the third movable passageway successively Afterwards,
Via while movement along second imaginary line after the 2-2 carrier supports in the 2-1 grinding flat plates Third grinding technics and the 4th grinding technics are carried out respectively with the 2-2 grinding flat plates, pass through the 1-2 carrier branch successively After holding frame and the third movable passageway, the wafer carrier is moved to the 2-1 carrier supports, and first wafer exists The uninstalling portion is unloaded from the wafer carrier, and first wafer is moved to the cleaning part by the transfer device Second flushing channel, be discharged after second cleaning module is cleaned.
CN201721860830.7U 2017-01-17 2017-12-27 Wafer processing system Active CN207953531U (en)

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