CN207938641U - 光电封装体 - Google Patents

光电封装体 Download PDF

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CN207938641U
CN207938641U CN201820370302.1U CN201820370302U CN207938641U CN 207938641 U CN207938641 U CN 207938641U CN 201820370302 U CN201820370302 U CN 201820370302U CN 207938641 U CN207938641 U CN 207938641U
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photoelectric chip
package body
reflectorized material
chip
optoelectronic package
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吴上义
谢新贤
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Unistars Corp
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    • G—PHYSICS
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Abstract

本实用新型公开一种光电封装体，包括线路基板、光电芯片、反光材料、光学元件以及粘合胶。线路基板具有承载平面。光电芯片装设于承载平面上，并电连接线路基板。光电芯片具有上表面、位于上表面的功能区以及连接上表面的侧面。反光材料配置于承载平面，并围绕光电芯片。反光材料覆盖侧面，并具有倾斜面。倾斜面围绕上表面，并从上表面的边缘延伸。反光材料于倾斜面的高度从光电芯片朝向远离光电芯片的方向而递减。粘合胶覆盖反光材料以及光电芯片的上表面，并连接于光电芯片与光学元件之间。

Description

光电封装体
技术领域
本实用新型涉及一种光电封装体，且特别是涉及一种具有反光材料(reflectivematerial)的光电封装体。
背景技术
目前很多发光二极管封装体(Lighting Emitting Diode Package，LED Package)的内部会设计出空腔(cavity)来供管芯(die)装设，其中空腔是由线路基板、形状为框形的模封材料(molding compound)以及二次光学元件所形成。模封材料围绕管芯，并位于二次光学元件与载板之间，其中模封材料不接触管芯，即模封材料与管芯之间存有间隔空间(space)，而二次光学元件覆盖并粘着于模封材料。上述间隔空间会使模封材料与二次光学元件之间形成框形的重叠区域，其面积有限，易造成模封材料与二次光学元件之间的粘合强度不足，导致信赖度(reliability)变差。
实用新型内容
本实用新型的目的在于提供一种光电封装体，其具有较佳的信赖度。
为达上述目的，本实用新型所提供的光电封装体包括线路基板、光电芯片、反光材料、光学元件以及粘合胶。线路基板具有承载平面。光电芯片装设于承载平面上，并电连接线路基板，其中光电芯片具有上表面、位于上表面的功能区以及连接上表面的侧面。反光材料配置于承载平面，并围绕光电芯片，其中反光材料覆盖光电芯片的侧面，并具有倾斜面。倾斜面围绕光电芯片的上表面，并从上表面的边缘延伸，而反光材料于倾斜面的高度从光电芯片朝向远离光电芯片的方向而递减。粘合胶覆盖反光材料以及光电芯片的上表面，并且连接于光电芯片与光学元件之间。
在本实用新型的一实施例中，上述光电芯片为发光芯片或光感测芯片。
在本实用新型的一实施例中，上述线路基板包括位于承载平面的金属图案层，而光电芯片电连接金属图案层。
在本实用新型的一实施例中，上述金属图案层包括配置层。光电芯片与反光材料都位于配置层上，而配置层凸出于光电芯片的侧面。反光材料沿着配置层而延伸。
在本实用新型的一实施例中，上述反光材料包括硅胶与多颗反光粒子。
在本实用新型的一实施例中，上述粘合胶包括多颗散射粒子。
在本实用新型的一实施例中，上述光电封装体还包括至少一条键合导线。至少一键合导线电连接光电芯片与线路基板。
在本实用新型的一实施例中，上述反光材料与粘合胶包覆至少一键合导线。
在本实用新型的一实施例中，上述光电芯片以倒装方式装设于承载平面上。
在本实用新型的一实施例中，上述反光材料还具有平坦面。平坦面从倾斜面延伸，并围绕倾斜面。
基于上述，本实用新型的优点在于，由于反光材料覆盖光电芯片的侧面，且连接光电芯片与光学元件的粘合胶会覆盖反光材料与光电芯片的上表面与功能区。因此，反光材料与光电芯片之间不会出现间隔空间，以使粘合层能连续(continuously)且完全地(totally)分布在反光材料与光电芯片两者与光学元件之间，从而强化反光材料与光电芯片两者与光学元件之间的粘合强度。
为让本实用新型的上述特征和优点能更明显易懂，下文特举实施例，并配合所附的附图作详细说明如下。
附图说明
图1是本实用新型一实施例的光电封装体的剖面示意图；
图2是本实用新型另一实施例的光电封装体的剖面示意图。
符号说明：
100、200：光电封装体
102：键合导线
110、210：光电芯片
112、212：上表面
112f、212f：功能区
114：侧面
120、220：线路基板
121：绝缘层
121a、221a：承载平面
121b：背面
122、123、222：金属图案层
122m、222m：配置层
124：导电柱
130：反光材料
131：硅胶
132：反光粒子
133：倾斜面
134：平坦面
140、240：光学元件
150：粘合胶
151：透明介质
152：散射粒子
202：连接凸块
T34a、T34b：高度
具体实施方式
图1是本实用新型一实施例的光电封装体的剖面示意图。请参阅图1，光电封装体100包括光电芯片110与线路基板120，其中光电芯片110装设于线路基板120，并电连接线路基板120，而线路基板120为线路板(wiring board)，其例如是双面线路板(double sidedwiring board)、单面线路板(single sided wiring board)或多层线路板(multilayerwiring board)。因此，线路基板120包括至少一层金属图案层122。以图1为例，线路基板120为一种双面线路板。
线路基板120具有承载平面121a与背面121b，并且包括两层金属图案层122与123，其中承载平面121a相对于背面121b，而两金属图案层122与123分别位于承载平面121a与背面121b。线路基板120还包括绝缘层121与至少一根导电柱124，其中绝缘层121具有承载平面121a与背面121b，而导电柱124位于绝缘层121中，并连接金属图案层122与123，以使金属图案层122与123能经由导电柱124而彼此电导通。此外，需说明的是，图1所示的线路基板120为双面线路板，但在其他实施例中，线路基板120也可以是单面线路板或多层线路板，所以图1所示的线路基板120仅为举例说明，并不限定线路基板120一定是双面线路板。
光电芯片110装设于承载平面121a上，并电连接金属图案层122，以使光电芯片110电连接线路基板120。以图1为例，光电芯片110是采用打线方式(wire-bonding)装设于承载平面121a上。详细而言，光电封装体100还包括至少一条键合导线102(图1绘示两条)，而键合导线102电连接光电芯片110与线路基板120，其中金属图案层122包括多条走线(trace)与多个接垫(pad)，而键合导线102连接金属图案层122的接垫。如此，利用键合导线102，光电芯片110能电连接金属图案层122。此外，需说明的是，在图1实施例中，光电封装体100所包括的键合导线102的数量为两条，但在其他实施例中，光电封装体100可以只包括一条键合导线102。所以，图1所示的键合导线102仅为举例说明，并不限定光电封装体100中的键合导线102的数量。
光电芯片110可为已经过封装(packaged)的封装体或是尚未封装的管芯。此外，光电芯片110可以是发光芯片或光感测芯片，其中发光芯片例如是发光二极管管芯(LEDdie)、发光二极管封装体或激光二极管管芯(Laser Diode Die，LD Die)，而光感测芯片例如是感光耦合元件(Charge-coupled Device，CCD)或互补式金属氧化物半导体影像感测元件(Complementary Metal-Oxide-Semiconductor Image Sensor，CMOS Image Sensor)。
光电芯片110具有上表面112以及位于上表面112的功能区112f。当光电芯片110为发光芯片时，功能区112f为光电芯片110的出光面(light-emitting surface)，即光电芯片110在通电之后，会从功能区112f发出光线。当光电芯片110为光感测芯片时，功能区112f为光电芯片110的光接收面(light-receiveing surface)，即光电芯片110能从功能区112f接收光线，并将此光线转换成电信号。由于功能区112f位于上表面112，因此不论光电芯片110是发光芯片或光感测芯片，光电芯片110都是从其上表面112来发出或接收光线。
光电封装体100还包括反光材料130，其配置于承载平面121a，并围绕光电芯片110。反光材料130更覆盖光电芯片110的部分表面，并可接触光电芯片110。详细而言，光电芯片110具有侧面114，其连接与邻接(adjacent to)上表面112，而反光材料130覆盖光电芯片110的侧面114。也就是说，反光材料130可接触侧面114，并围绕光电芯片110。反光材料130包括硅胶131与多颗反光粒子132，其中反光粒子132分散于硅胶131中，且反光粒子132例如是金属颗粒。因此，反光材料130的外观可呈现金属光泽。此外，反光材料130的材料可以是白色硅胶，所以反光材料130的外观颜色可为白色。
当光电芯片110为发光芯片时，反光材料130能反射光电芯片110从侧边(例如上表面112与侧面114之间的交界处)所发出的光线，以使光电封装体100能尽量将光线集中从上表面112发出。另外，当光电芯片110为光感测芯片时，反光材料130能将从外界而来的光线反射至光电芯片110的功能区112f，以使光电芯片110能收集较多的光线，从而提升光电芯片110的光感测能力。
反光材料130的高度并不一致。以图1为例，反光材料130在邻接光电芯片110处的高度T34a会大于在其他地方的高度，例如大于反光材料130在线路基板120边缘处的高度T34b，其中这里所指的高度(包括高度T34a与T34b)是相对于承载平面121a，所以图1所示的高度T34a等于光电芯片110的厚度加上金属图案层122的厚度。因此，反光材料130具有倾斜面133，其围绕光电芯片110的上表面112，并从上表面112的边缘延伸，其中反光材料130于倾斜面133的高度T34a从光电芯片110朝向远离光电芯片110的方向而递减。所以，在倾斜面133范围内，反光材料130的高度T34a从光电芯片110朝向线路基板120而递减，如图1所示。反光材料130还具有平坦面134，其从倾斜面133延伸，并围绕倾斜面133。
在图1所示的实施例中，金属图案层122可以还包括配置层122m。光电芯片110与反光材料130都位于配置层122m上，其中光电芯片110例如可用胶粘(adhering)的方式固定于配置层122m。此外，光电芯片110可不电连接配置层122m，以使配置层122m与光电芯片110之间没有电流传递。换句话说，光电芯片110可与配置层122m保持电绝缘。配置层122m凸出于光电芯片110的侧面114，而反光材料130能沿着配置层122m而延伸。详细而言，反光材料130是经过固化(cured)而形成。在固化以前，反光材料130具有流动性(flowable)。例如，反光材料130的粘滞系数可为18泊(poise)。
反光材料130与金属之间的附着力(adhesive force)大于反光材料130的内聚力(cohesion)，以至于反光材料130能附着于金属图案层122而流动。因此，金属图案层122能导引流动的反光材料130，以控制反光材料130的分布。换句话说，反光材料130能经由金属图案层122来形成，无需使用模具(mold)。如此，在光电芯片110固定于配置层122m之后，未固化的反光材料130能在凸出于侧面114的部分配置层122m上流动，进而围绕光电芯片110。
反光材料130与光电芯片110侧面114之间附着力也大于反光材料130本身的内聚力，所以反光材料130也容易附着于光电芯片110的侧面114并形成倾斜面133。在形成反光材料130的过程中，可控制反光材料130的量，以使流动的反光材料130不覆盖光电芯片110的上表面112，从而防止因反光材料130遮蔽功能区112f而导致光电封装体100失效。此外，倾斜面133是因为反光材料130与光电芯片110侧面114之间的附着力而形成，所以倾斜面133实际上应为曲面。
光电封装体100还包括光学元件140与粘合胶150，其中光学元件140为二次光学元件，其可以是透镜或透明板(transparent plate)。以图1为例，光学元件140为平面玻璃板。粘合胶150覆盖反光材料130与光电芯片110上表面112，并连接于光电芯片110与光学元件140之间。此外，反光材料130与粘合胶150会包覆这些键合导线102，如图1所示。
粘合胶150可包括透明介质151与多颗散射粒子152，其中这些散射粒子152可来自于扩散粉，并能散射光线，以使粘合胶150的外观呈现雾面。当光电芯片110为发光芯片时，光电芯片110所发出的光线在通过粘合胶150时，会被这些散射粒子152散射，以使光线得以被均匀化。此外，散射粒子152可来自于荧光粉，因此粘合胶150也可具备波长转换的功能。
图2是本实用新型另一实施例的光电封装体的剖面示意图。请参阅图2，本实施例的光电封装体200与前述实施例的光电封装体100相似，两者功能相同，也都包括一些相同的元件，例如反光材料130与粘合胶150。线路基板220可相同于线路基板120，而光电芯片210也可为发光芯片或光感测芯片，并具有上表面212与位于上表面212的功能区212f，其中粘合胶150也是覆盖上表面212。以下主要针对光电封装体200不同于光电封装体100的差异进行说明。
在图2所示的光电封装体200中，光学元件240为透镜，其例如是凸透镜(如图2所示)，而光电芯片210是以倒装(flip chip)方式装设于线路基板220的承载平面221a上。具体而言，光电封装体200包括多个连接凸块202，其可以是焊球。这些连接凸块202连接光电芯片210与线路基板220，以使光电芯片210能电连接线路基板220。此外，线路基板220包括金属图案层222，而且金属图案层222也包括配置层222m。不过，不同于前述光电封装体100，配置层222m可以分成至少两个用来连接光电芯片210的接垫(pad)，其中电流可在配置层222m与光电芯片210之间传递。因此，配置层222m可以电连接光电芯片210。
综上所述，由于反光材料覆盖光电芯片的侧面，且连接光电芯片与光学元件的粘合胶会覆盖反光材料与光电芯片的上表面，甚至覆盖功能区。相较于现有光电封装体，在本实用新型至少一实施例的光电封装体中，反光材料与光电芯片之间不会出现间隔空间，以使反光材料与光电芯片两者与光学元件之间不形成框形且面积有限的重叠区域，让粘合层能连续且完全地分布在反光材料与光电芯片两者与光学元件之间。如此，可强化反光材料与光电芯片两者与光学元件之间的粘合强度，提升信赖度。
此外，当光电芯片为发光芯片时，反光材料能反射光电芯片所发出的光线，以使光电封装体能尽量将光线集中发出，从而提高光电封装体的亮度。当光电芯片为光感测芯片时，反光材料能将从外界而来的光线反射至光面芯片功能区，以收集较多的光线，从而提升光电芯片的光感测能力。
虽然结合以上实施例已公开了本实用新型，然而其并非用以限定本实用新型，本实用新型所属技术领域中具有通常知识者，在不脱离本实用新型的精神和范围内，可作些许的更动与润饰，因此本实用新型的保护范围应当以附上的权利要求所界定的为准。

Claims (10)

1.一种光电封装体，其特征在于，该光电封装体包括：
线路基板，具有承载平面：
光电芯片，装设于该承载平面上，并电连接该线路基板，其中该光电芯片具有上表面、位于该上表面的功能区以及连接该上表面的侧面；
反光材料，配置于该承载平面，并围绕该光电芯片，其中该反光材料覆盖该光电芯片的该侧面，并具有一倾斜面，该倾斜面围绕该光电芯片的该上表面，并从该上表面的边缘延伸，而该反光材料于该倾斜面的高度从该光电芯片朝向远离该光电芯片的方向而递减；
光学元件；以及
黏合胶，覆盖该反光材料以及该光电芯片的该上表面，并且连接于该光电芯片与该光学元件之间。
2.如权利要求1所述的光电封装体，其特征在于，该光电芯片为发光芯片或光感测芯片。
3.如权利要求1所述的光电封装体，其特征在于，该线路基板包括位于该承载平面的金属图案层，该光电芯片电连接该金属图案层。
4.如权利要求3所述的光电封装体，其特征在于，该金属图案层包括配置层，该光电芯片与该反光材料都位于该配置层上，而该配置层凸出于该光电芯片的该侧面，该反光材料沿着该配置层而延伸。
5.如权利要求3所述的光电封装体，其特征在于，该反光材料包括硅胶与多颗反光粒子。
6.如权利要求1所述的光电封装体，其特征在于，该黏合胶包括多颗散射粒子。
7.如权利要求1所述的光电封装体，其特征在于，该光电封装体还包括至少一条键合导线，该至少一键合导线电连接该光电芯片与该线路基板。
8.如权利要求1所述的光电封装体，其特征在于，该反光材料与该黏合胶包覆该至少一键合导线。
9.如权利要求1所述的光电封装体，其特征在于，该光电芯片以倒装方式装设于该承载平面上。
10.如权利要求1所述的光电封装体，其特征在于，该反光材料还具有平坦面，该平坦面从该倾斜面延伸，并围绕该倾斜面。
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