CN207933525U - 一种真空反应装置及反应腔 - Google Patents
一种真空反应装置及反应腔 Download PDFInfo
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- CN207933525U CN207933525U CN201820204125.XU CN201820204125U CN207933525U CN 207933525 U CN207933525 U CN 207933525U CN 201820204125 U CN201820204125 U CN 201820204125U CN 207933525 U CN207933525 U CN 207933525U
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 140
- 238000000231 atomic layer deposition Methods 0.000 claims abstract description 28
- 230000002093 peripheral effect Effects 0.000 claims abstract description 3
- 239000000126 substance Substances 0.000 claims description 72
- 239000012159 carrier gas Substances 0.000 claims description 54
- 239000012495 reaction gas Substances 0.000 claims description 44
- 239000007789 gas Substances 0.000 claims description 23
- 238000010926 purge Methods 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 150000002500 ions Chemical class 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 24
- 229910052710 silicon Inorganic materials 0.000 abstract description 19
- 239000010703 silicon Substances 0.000 abstract description 19
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 abstract description 14
- 238000009413 insulation Methods 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 26
- 238000000034 method Methods 0.000 description 17
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 12
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 12
- 239000000463 material Substances 0.000 description 10
- 238000000151 deposition Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 235000013842 nitrous oxide Nutrition 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910017107 AlOx Inorganic materials 0.000 description 1
- 229910017105 AlOxNy Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000003851 corona treatment Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Abstract
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201820204125.XU CN207933525U (zh) | 2018-02-06 | 2018-02-06 | 一种真空反应装置及反应腔 |
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CN201820204125.XU CN207933525U (zh) | 2018-02-06 | 2018-02-06 | 一种真空反应装置及反应腔 |
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Publication Number | Publication Date |
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CN207933525U true CN207933525U (zh) | 2018-10-02 |
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CN201820204125.XU Active CN207933525U (zh) | 2018-02-06 | 2018-02-06 | 一种真空反应装置及反应腔 |
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CN (1) | CN207933525U (zh) |
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2018
- 2018-02-06 CN CN201820204125.XU patent/CN207933525U/zh active Active
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GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: 214028 No.11 Lijiang Road, Xinwu District, Wuxi City, Jiangsu Province Patentee after: Jiangsu micro nano technology Co.,Ltd. Address before: 214028, No. four, No. 7 Road, Wuxi New District, Jiangsu Patentee before: JIANGSU LEADMICRO NANO-EQUIPMENT TECHNOLOGY Ltd. |
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CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: No. 27 Changjiang South Road, Xinwu District, Wuxi City, Jiangsu Province, China Patentee after: Jiangsu micro nano technology Co.,Ltd. Country or region after: China Address before: No.11 Lijiang Road, Xinwu District, Wuxi City, Jiangsu Province Patentee before: Jiangsu micro nano technology Co.,Ltd. Country or region before: China |