CN207891425U - 一种等离子体气相沉积装置 - Google Patents
一种等离子体气相沉积装置 Download PDFInfo
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- CN207891425U CN207891425U CN201820045570.6U CN201820045570U CN207891425U CN 207891425 U CN207891425 U CN 207891425U CN 201820045570 U CN201820045570 U CN 201820045570U CN 207891425 U CN207891425 U CN 207891425U
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- 230000008021 deposition Effects 0.000 title claims abstract description 30
- 238000007740 vapor deposition Methods 0.000 claims abstract description 3
- 239000007789 gas Substances 0.000 claims description 49
- 238000009423 ventilation Methods 0.000 claims description 14
- 238000005086 pumping Methods 0.000 claims description 13
- 239000011229 interlayer Substances 0.000 claims description 11
- 239000012495 reaction gas Substances 0.000 claims description 5
- 239000002341 toxic gas Substances 0.000 claims description 4
- 238000000151 deposition Methods 0.000 description 25
- 229910003460 diamond Inorganic materials 0.000 description 19
- 239000010432 diamond Substances 0.000 description 19
- 239000003570 air Substances 0.000 description 16
- 230000000052 comparative effect Effects 0.000 description 14
- 239000012071 phase Substances 0.000 description 12
- 239000012535 impurity Substances 0.000 description 9
- 230000005540 biological transmission Effects 0.000 description 7
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- 239000000758 substrate Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 231100000614 poison Toxicity 0.000 description 2
- 230000007096 poisonous effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 208000012826 adjustment disease Diseases 0.000 description 1
- 239000012080 ambient air Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910000085 borane Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
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- 239000013618 particulate matter Substances 0.000 description 1
- 238000005373 pervaporation Methods 0.000 description 1
- 238000000678 plasma activation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 231100000004 severe toxicity Toxicity 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- UORVGPXVDQYIDP-UHFFFAOYSA-N trihydridoboron Substances B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 1
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Application Number | Priority Date | Filing Date | Title |
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CN201820045570.6U CN207891425U (zh) | 2018-01-11 | 2018-01-11 | 一种等离子体气相沉积装置 |
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CN201820045570.6U CN207891425U (zh) | 2018-01-11 | 2018-01-11 | 一种等离子体气相沉积装置 |
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CN207891425U true CN207891425U (zh) | 2018-09-21 |
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CN201820045570.6U Active CN207891425U (zh) | 2018-01-11 | 2018-01-11 | 一种等离子体气相沉积装置 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108103482A (zh) * | 2018-01-11 | 2018-06-01 | 宁波晶钻工业科技有限公司 | 一种等离子体气相沉积装置以及方法 |
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2018
- 2018-01-11 CN CN201820045570.6U patent/CN207891425U/zh active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108103482A (zh) * | 2018-01-11 | 2018-06-01 | 宁波晶钻工业科技有限公司 | 一种等离子体气相沉积装置以及方法 |
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GR01 | Patent grant | ||
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PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
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Denomination of utility model: Plasma vapor phase deposition device and method Effective date of registration: 20190813 Granted publication date: 20180921 Pledgee: Bank of Hangzhou Limited by Share Ltd. Ningbo Zhenhai Branch Pledgor: Ningbo Jingduan Industrial Technology Co.,Ltd. Registration number: Y2019330000004 |
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CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: 315200 No. 777, Zhong Guan Xi Road, Zhuang City Street, Zhenhai District, Ningbo, Zhejiang. Patentee after: Ningbo Crystal Diamond Technology Co.,Ltd. Address before: 315200 No. 777, Zhong Guan Xi Road, Zhuang City Street, Zhenhai District, Ningbo, Zhejiang. Patentee before: Ningbo Jingduan Industrial Technology Co.,Ltd. |
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CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: No. 998 Zhongguan Road, Jiaochuan Street, Zhenhai District, Ningbo City, Zhejiang Province, 315200 Patentee after: Ningbo Crystal Diamond Technology Co.,Ltd. Address before: 315200 No. 777, Zhong Guan Xi Road, Zhuang City Street, Zhenhai District, Ningbo, Zhejiang. Patentee before: Ningbo Crystal Diamond Technology Co.,Ltd. |