CN207800542U - dielectric barrier discharge ion source - Google Patents
dielectric barrier discharge ion source Download PDFInfo
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- CN207800542U CN207800542U CN201721503728.1U CN201721503728U CN207800542U CN 207800542 U CN207800542 U CN 207800542U CN 201721503728 U CN201721503728 U CN 201721503728U CN 207800542 U CN207800542 U CN 207800542U
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Abstract
The utility model provides a kind of dielectric barrier discharge ion source, including the first screw electrode, the second screw electrode, the first insulating layer and second insulating layer.First insulating layer is set to first screw electrode side wall opposite with second screw electrode.The second insulating layer is set to second screw electrode side wall opposite with first screw electrode.First screw electrode is band-like, and is extended spirally outward by initiating terminal.Second screw electrode is band-like, and is extended spirally outward by initiating terminal.Second screw electrode is coplanar with first screw electrode and parallel interval is arranged.Elongated coherent discharge channels are set between spiral helicine discharge electrode, reduce the gap between two discharge electrodes.The area for increasing sample ionization in the case where not increasing entire area as possible, to make by sample flow increase, improve ionizing efficiency.
Description
Technical field
The utility model is related to ionization techniques, more particularly to a kind of dielectric barrier discharge ion source.
Background technology
Ion source is to make neutral atom or molecular ionization, and therefrom draw the device of ion beam current.It is flowed through in sample gas
When region of discharge, can ion be ionized by electric field.But traditional ion source ionization area is small, ionizing efficiency is relatively low, uses
Voltage is also larger.
Utility model content
Based on this, it is necessary to for traditional ionization source ionization problem that area is small, ionizing efficiency is low, provide a kind of medium resistance
Keep off discharge ion source.
A kind of dielectric barrier discharge ion source, including：
First screw electrode, first screw electrode is band-like, and is extended spirally outward by initiating terminal；
Second screw electrode, second screw electrode is band-like, and is extended spirally outward by initiating terminal, second spiral shell
It revolves electrode and first screw electrode is coplanar and parallel interval is arranged；
First insulating layer, it is opposite with second screw electrode that first insulating layer is set to first screw electrode
Side wall；
Second insulating layer, it is opposite with first screw electrode that the second insulating layer is set to second screw electrode
Side wall.
First screw electrode and second screw electrode are complementary in one of the embodiments, and collectively form
Circular configuration.
The initiating terminal of the initiating terminal of first screw electrode and second screw electrode in one of the embodiments,
For complementary Tai Ji head.
The first screw electrode includes the first strip-spiral matrix, and covering first spiral shell in one of the embodiments,
Revolve the first conductive layer of strip matrix；
Second screw electrode includes the second strip-spiral matrix, and covers the second of the second strip-spiral matrix
Conductive layer；
The second strip-spiral matrix is arranged with the first strip-spiral matrix parallel interval.
First conductive layer is set to the first strip-spiral matrix and described second in one of the embodiments,
The opposite side wall of strip-spiral matrix；
It is opposite with the first strip-spiral matrix that second conductive layer is set to the second strip-spiral matrix
Side wall.
The dielectric barrier discharge ion source further includes in one of the embodiments,：
First supporting rack, first supporting rack are fixedly connected with the spiral outer peripheral end of first screw electrode；
Second supporting rack, second supporting rack are fixedly connected with the spiral outer peripheral end of second screw electrode.
Spiral is formed between first screw electrode and second screw electrode in one of the embodiments, to put
Electric raceway groove, the extension side of the extending direction of the helical discharge raceway groove and first screw electrode and second screw electrode
To identical.
The width of the helical discharge raceway groove is 10 microns -100 microns in one of the embodiments,.
The helical discharge raceway groove is vertical wide than being more than 10 in one of the embodiments,:1.
First screw electrode and the opposite surface of second screw electrode are provided in one of the embodiments,
Multiple first salient points；
The surface of second screw electrode and first screw electrode is provided with multiple second salient points.
The dielectric barrier discharge ion source further comprises power supply, the power supply difference in one of the embodiments,
It is electrically connected with second screw electrode and first screw electrode.
Above-mentioned dielectric barrier discharge ion source, spiral helicine first screw electrode being arranged using coplanar and parallel interval and
Second screw electrode, interval between the first screw electrode and the second screw electrode is by sample and ionizing the sample.
Elongated coherent channel is set between spiral helicine discharge electrode, in the case where not increasing entire area as possible increase sample
Product ionization area, to make by sample flow increase, improve ionizing efficiency.Due to the distance between positive and negative discharge electrode
With applied voltage size positive correlation, so the structure of above-mentioned dielectric barrier discharge ion source reduces the voltage needed for ion source,
Consumption is reduced, ion source surrounding devices can be had an impact by also avoiding excessive voltage.
Description of the drawings
Fig. 1 is the schematic top plan view of the ion source structure for the dielectric barrier discharge that one embodiment of the utility model provides；
Fig. 2 is the close-up schematic view for Fig. 1 circle part As that one embodiment of the utility model provides；
Fig. 3 is the vertical view for the dielectric barrier discharge ion source structure (having supporting rack) that one embodiment of the utility model provides
Schematic diagram；
Fig. 4 is the close-up schematic view for Fig. 3 circles part B (having salient point) that one embodiment of the utility model provides；
Fig. 5 is the shelf depreciation signal of the ion source structure for the dielectric barrier discharge that one embodiment of the utility model provides
Figure.
Label declaration：
10 dielectric barrier discharge ion sources
100 first screw electrodes
110 first strip-spiral matrixes
120 first conductive layers
130 first supporting racks
140 first salient points
200 second screw electrodes
210 second strip-spiral matrixes
220 second conductive layers
230 second supporting racks
240 second salient points
300 discharge channels
400 power supplys
510 first insulating layers
520 second insulating layers
Specific implementation mode
To keep the above objects, features, and advantages of the utility model more obvious and easy to understand, below in conjunction with the accompanying drawings to this
The specific implementation mode of utility model is described in detail.Elaborate many details in order to abundant in the following description
Understand the utility model.But the utility model can be much to implement different from other manner described here, this field
Technical staff can do similar improvement without prejudice to the utility model connotation, therefore the utility model is not by following public affairs
The limitation for the specific implementation opened.
It should be noted that when element is referred to as " being fixed on " another element, it can be directly on another element
Or there may also be elements placed in the middle.When an element is considered as " connection " another element, it can be directly connected to
To another element or it may be simultaneously present centering elements.
Unless otherwise defined, all of technologies and scientific terms used here by the article is led with the technology for belonging to the utility model
The normally understood meaning of technical staff in domain is identical.Terminology used in the description of the utility model herein only be
The purpose of description specific embodiment, it is not intended that in limitation the utility model.Term " and or " used herein includes
Any and all combinations of one or more relevant Listed Items.
Referring to Fig. 1 and Fig. 2, the utility model provides a kind of dielectric barrier discharge ion source 10, including the first screw electrode
100, the second screw electrode 200, the first insulating layer 510 and second insulating layer 520.First screw electrode 100 is band-like, and
It is extended spirally outward by initiating terminal.Second screw electrode 200 is band-like, and is extended spirally outward by initiating terminal.Described
Two screw electrodes 200 are coplanar with first screw electrode 100 and parallel interval is arranged.
In one embodiment, first screw electrode 100 is with material used in second screw electrode 200
Conductive material.First screw electrode 100 and second screw electrode 200 are to pass through micro Process by whole piece conductive material
Technique is made, therefore the end face of band-like first screw electrode 100 and band-like second screw electrode 200
End face is in same plane, i.e., described first screw electrode 100 and second screw electrode 200 are coplanar.In another implementation
In example, the side wall of first screw electrode 100 is opposite with a side wall part for second screw electrode 200, another part
Vacantly.In one embodiment, first screw electrode 100 and second screw electrode 200 are that have doping by one piece
Silicon wafer carries out longitudinal deep etching under micro electro mechanical system (MEMS) technology (MEMS) technique and is made.
In one embodiment, band-like first screw electrode 100 can with band-like second screw electrode 200
To be smooth shape.In another embodiment, band-like first screw electrode 100 and band-like second screw electrode
200 can also be wavy, and the wave crest pair of the wave crest of first screw electrode 100 and second screw electrode 200
It answers, the trough of first screw electrode 100 is corresponding with the trough of second screw electrode 200.Between wavy electrode
Passage length can be longer.The dielectric barrier discharge ion source 10 can be by band-like 100 He of the first screw electrode
The reduced width of band-like second screw electrode 200 increases the number of turns of helical duct so as to obtain longer spiral electricity
From channel, further expand ionization area.The initiating terminal of first screw electrode 100 and second screw electrode 200
Initiating terminal is open end, and is spaced setting.Second screw electrode 200 is coplanar with first screw electrode 100 to refer to
The starting of the initiating terminal of second screw electrode 200 and plane and first screw electrode 100 where spiral outer peripheral end
End is in same plane with the plane where spiral outer peripheral end.Second screw electrode 200 and first screw electrode 100
Parallel interval is arranged in the case of coplanar, and the interval of second screw electrode 200 and first screw electrode 100 is used for
Pass through sample gas.First insulating layer 510 and second insulating layer 520 are for realizing dielectric barrier discharge.Described first absolutely
The material of edge layer 510 and second insulating layer 520 is unlimited, as long as insulator.In one embodiment, described first absolutely
The material of edge layer 510 and second insulating layer 520 is mica, glass or ceramics.
In one embodiment, first insulating layer 510 is set to first screw electrode 100 and second spiral shell
Revolve the opposite side wall of electrode 200.The second insulating layer 520 is set to second screw electrode 200 and first spiral
The opposite side wall of electrode 100.
In one embodiment, first insulating layer 510 can also vacantly be set to first screw electrode 100
Between side wall and the side wall of second screw electrode 200, and be provided with below first insulating layer 510 with it is described
The matched spiral shape fixed frame of first insulating layer, 510 shape fixes first insulating layer 510.The second insulating layer 520
It can vacantly be set between the side wall of first screw electrode 100 and the side wall of second screw electrode 200, and
Described in the lower section of the second insulating layer 520 is provided with and fixes with the matched spiral shape fixed frame of 520 shape of the second insulating layer
Second insulating layer 520.In one embodiment, the thickness of first insulating layer 510 is 1 micron -20 microns.In another reality
It applies in example, the thickness of first insulating layer 510 is 3 microns -15 microns.In yet another embodiment, first insulating layer
510 thickness is 5 microns.In one embodiment, the thickness of the second insulating layer 520 is 1 micron -20 microns.Another
In a embodiment, the thickness of the second insulating layer 520 is 3 microns -15 microns.In yet another embodiment, described second absolutely
The thickness of edge layer 520 is 5 microns.The thickness of first insulating layer 510 can be identical with the thickness of the second insulating layer 520
It can also be different.
In another embodiment, insulating layer can only have one layer and be set to 100 direction of the first screw electrode
The side wall of the side wall of second screw electrode 200 or second screw electrode 200 towards first screw electrode 100.
The monolayer insulating layer can also be suspended on the side of the side wall and second screw electrode 200 of first screw electrode 100
Between wall, and it is provided with below the monolayer insulating layer and consolidates with the matched spiral shape fixed frame of the monolayer insulating layer shape
The fixed monolayer insulating layer.
In the present embodiment, first screw electrode 100 and second screw electrode 200 from the initiating terminal at interval to
External spiral extends, and coplanar interval is arranged.Between first screw electrode 100 and second screw electrode 200
Interval being ionized by sample.Between between first screw electrode 100 and second screw electrode 200
Every elongated and coherent, make in the material of same homalographic between electrode to longer by the channel of sample, to increase sample electricity
Area from area also increases the flow of sample simultaneously, and then increases ionizing efficiency.This spiral shell is made by micro fabrication
Rotation shape structure makes the interval smaller of first screw electrode 100 and second screw electrode 200.According to positive and negative electric discharge electricity
The distance of interpolar and the positively related principle of applied voltage size, reduce traditional ion source required voltage, reduce consumption,
Ion source surrounding devices can be had an impact by also avoiding excessive voltage.
First insulating layer 510 and the second insulating layer 520 are respectively arranged at opposite first screw electrode
The side wall of 100 side wall and second screw electrode 200.Pass through the side wall of first screw electrode 100 and described second
The side wall of screw electrode 200 can fix first insulating layer 510 and the second insulating layer 520.Make first insulation
Discharging gap between layer 510 and the second insulating layer 520 is constant, to generate the dielectric barrier discharge of stable and uniform.It keeps away
Exempt to generate wobble effects ionization effect during first insulating layer 510 and 520 use of the second insulating layer.It is given an account of
Matter barrier discharge ion source 10 can ionize sample gas under higher field strength by dielectric barrier discharge so that sample gas
The energy bigger obtained when volume ionization, can generate more rich reactive ion, effectively improve Ionization Efficiency.
In one embodiment, first screw electrode 100 and second screw electrode 200 are complementary, and common structure
At circular configuration.It, can when first screw electrode 100 is extended spirally with second screw electrode 200 from initiating terminal outward
To extend along arc, circular dielectric barrier discharge ion source 10 is eventually formed.It can also be along rectangular extension, last shape
The dielectric barrier discharge ion source 10 of squarely.It can also extend and ultimately form the medium resistance of respective shapes along other shapes
Keep off discharge ion source 10, such as triangle, hexagon.
In the present embodiment, first screw electrode 100 and second screw electrode 200 are complementary, and collectively form
Circular configuration so that the spiral ionization channels formed in the case of occupying same area are longer, to obtain the ionization of bigger
The area in region improves the efficiency of sample ionization.
In one embodiment, of the initiating terminal of first screw electrode 100 and second screw electrode 200
Beginning is the Tai Ji head of complementation.The initiating terminal of first screw electrode 100 and the initiating terminal of second screw electrode 200 are set
Material can maximumlly be utilized and two interelectrode spacing can be kept equal everywhere by being set to complementary Tai Ji head.Another
In a embodiment, the initiating terminal of the initiating terminal of first screw electrode 100 and second screw electrode 200 can also be side by side
And it parallelly extends spirally outward in the same direction.The starting of first screw electrode 100 and second screw electrode 200 side by side
End can outward be extended spirally in initiating terminal along rectangular, can make first screw electrode 100 and second spiral electricity
The spacing of pole 200 is equal everywhere.
In one embodiment, the first screw electrode 100 includes the first strip-spiral matrix 110, and covering described first
First conductive layer 120 of strip-spiral matrix 110.Second screw electrode 200 includes the second strip-spiral matrix 210, and
Cover the second conductive layer 220 of the second strip-spiral matrix 210.The second strip-spiral matrix 210 and described first
110 parallel interval of strip-spiral matrix is arranged.
First conductive layer 120 can be covered in the first strip-spiral matrix 110 and second strip-spiral
The opposite side wall of matrix 210 can also cover 110 all surfaces of the first strip-spiral matrix.Second conductive layer 220
It can be covered in 210 side wall opposite with the first strip-spiral matrix 110 of the second strip-spiral matrix, can also be covered
Cover all surfaces of the second strip-spiral matrix 210.The material of first conductive layer 120 is unlimited, as long as electrically conductive
.For example, metal can be used, more specifically, copper, iron, aluminium or various alloys can be used.Second conductive layer 220
Material it is unlimited, as long as electrically conductive.For example, metal can be used, more specifically, copper, iron, aluminium or various can be used
Alloy.The first strip-spiral matrix 110 and the material of the second strip-spiral matrix 210 are unlimited, as long as with conduction
Property and shape can be kept.In one embodiment, the first strip-spiral matrix 110 and second spiral bar
The material of shape matrix 210 is the silicon for having doping.The first strip-spiral matrix 110 and the second strip-spiral matrix 210
The silicon chip that has doping by a monoblock by MEMS technology etch come.In one embodiment, first conductive layer
120 are directly electrically connected with positive pole.Second conductive layer 220 is directly electrically connected with power cathode.
It is opposite with the second strip-spiral matrix 210 in the first strip-spiral matrix 110 in the present embodiment
Side wall is covered each by one layer of first conductive layer 120 and second conductive layer 220, and electric current can directly pass through described first
Conductive layer 120 and second conductive layer 220 ionize the sample in ionized space.Conductive layer can select metal
Layer, can be conductive faster, to improve ionizing efficiency.
Please also refer to Fig. 3, in one embodiment, the dielectric barrier discharge ion source 10 further includes the first supporting rack
130 and second supporting rack 230.The spiral outer peripheral end of first supporting rack 130 and first screw electrode 100, which is fixed, to be connected
It connects.Second supporting rack 230 is fixedly connected with the spiral outer peripheral end of second screw electrode 200.
Specifically, first supporting rack 130 includes support arm and pedestal.Described support arm one end and first spiral
The spiral outer peripheral end of electrode 100 is fixedly connected.Spiral outer peripheral end of the support arm far from first screw electrode 100
The other end is fixedly connected with pedestal.In one embodiment, the spiral shell of one end of the support arm and first screw electrode 100
The welding of rotation outer peripheral end is connected by a snap.Spiral outer peripheral end of the support arm far from first screw electrode 100 it is another
One end and tube chamber welds with base are bolted.Second supporting rack 230 can be identical as 130 structure of the first supporting rack
And it is symmetrical arranged relative to the dielectric barrier discharge ion source 10.First supporting rack 130 and second supporting rack
230 material can select insulating materials.In one embodiment, first supporting rack 130 and second supporting rack 230
Material with Ceramics or the metal of insulating layer can be coated with, for example be coated with the ferroalloy of resin or plastics.
In the present embodiment, first supporting rack 130 and second supporting rack 230 are electric with first spiral respectively
The spiral outer peripheral end of pole 100 is fixedly connected with the spiral outer peripheral end of second screw electrode 200.To secure described first
The relative position of screw electrode 100 and second screw electrode 200 makes first screw electrode 100 and second spiral shell
Rotation electrode 200 can keep coplanar and parallel interval setting structure.
In one embodiment, it is formed with spiral between first screw electrode 100 and second screw electrode 200
Discharge channels 300.The extending direction of the helical discharge raceway groove 300 and first screw electrode 100 and second spiral
The extending direction of electrode 200 is identical.In one embodiment, the helical discharge raceway groove 300 is due to first spiral electricity
It is formed by being etched perforation by MEMS techniques between pole 100 and second screw electrode 200.The helical discharge ditch
Road 300 is the ionized region of sample gas.Sample gas is from outside the initiating terminal of first screw electrode 100 and spiral
The direction for enclosing the plane where end flows through the helical discharge raceway groove 300 and is ionized.Inert gas can be added in sample gas
Or inert gas is used completely, to make the air pressure needed for the Atomospheric pressure glow discharge ion source 10 only need atmospheric pressure.
In one embodiment, the width of the helical discharge raceway groove 300 is 10 microns -100 microns.In another implementation
In example, the width of the helical discharge raceway groove 300 is 30 microns -80 microns.In yet another embodiment, the helical discharge ditch
The width in road 300 is 50 microns.300 width of helical discharge raceway groove obtained by MEMS technology is narrower, with discharge channels
The positively related applied voltage of width is also minimized, to reduce power consumption and avoid influence of the excessive voltage to ambient enviroment.Institute
The applied voltage for stating dielectric barrier discharge ion source 10 only needs 400V-500V that can be adequately ionized sample.In a reality
It applies in example, the applied voltage of the dielectric barrier discharge ion source 10 is 450V.
In one embodiment, the helical discharge raceway groove 300 is vertical wide than being more than 10:1.In one embodiment, institute
State the vertical wide than being 10 of helical discharge raceway groove 300:1.In another embodiment, the vertical wide ratio of the helical discharge raceway groove 300
It is 12:1.The helical discharge raceway groove 300 indulges the wide ratio than referring to the depth and width of the helical discharge raceway groove 300.
In one embodiment, the vertical wide ratio of the helical discharge raceway groove 300 is 15:1.In the present embodiment, the helical discharge raceway groove
300 depth and the ratio of width are more than 10:1 can make the area bigger of the side wall of the helical discharge raceway groove 300, to make
The time that sample is ionized increases, and enhances ionization effect.
Please also refer to Fig. 4, in one embodiment, first screw electrode 100 and second screw electrode 200
Opposite surface is provided with multiple first salient points 140.The table of second screw electrode 200 and first screw electrode 100
Face is provided with multiple second salient points 240.In one embodiment, first screw electrode 100 includes the first of surface covering
Conductive layer 120, the multiple first salient point 140 can be set to first conductive layer 120 towards second screw electrode
200 one side.Second screw electrode 200 includes the second conductive layer 220 of surface covering, the multiple second salient point 240
It is set to one side of second conductive layer 220 towards first screw electrode 100.In one embodiment, multiple described
First salient point 140 is set to the surface of first insulating layer 510.Multiple second salient points 240 are set to described second absolutely
The surface of edge layer 520.In one embodiment, first salient point 140 is integrally formed with first insulating layer 510.It is described
Second salient point 240 is integrally formed with the second insulating layer 520.In one embodiment, the top of each first salient point 140
Vertex of the point corresponding to second salient point 240 on opposite.In another embodiment, the top of first salient point 140
Point can not also be corresponding with the vertex of second salient point 240.In the shape of first salient point 140 and second salient point 240
Shape is not limited to hemispherical, can also be at rodlike, needle-shaped or other regular or irregular shapes.
In the present embodiment, the multiple first salient point 140 and multiple second salient points 240 can be by first spiral electricity
The current collection of pole 100 and second screw electrode 200 gets up using the separate of point discharge, enhances the ionization effect of sample
Fruit.
In one embodiment, the dielectric barrier discharge ion source 10 further includes power supply 400.The power supply 400 is distinguished
It is electrically connected with second screw electrode 200 and first screw electrode 100.In one embodiment, first spiral
Electrode 100 is connect with the anode of the power supply 400.Second screw electrode 200 is connect with the cathode of the power supply 400.
In one embodiment, the anode of the power supply 400 is electrically connected with the spiral outer peripheral end of first screw electrode 100.The electricity
The cathode in source 400 is electrically connected with the spiral outer peripheral end of second screw electrode 200.In one embodiment, the power supply 400 is being just
Pole is electrically connected with the first strip-spiral matrix 110.400 cathode of the power supply and 210 electricity of the second strip-spiral matrix
Connection.In one embodiment, 400 anode of the power supply is electrically connected with first conductive layer 120.400 cathode of the power supply
It is electrically connected with second conductive layer 220.The power supply 400 can select direct current, can also select alternating current or pulse electricity
Pressure.The voltage range of the power supply 400 is 400V-500V.In one embodiment, the dielectric barrier discharge ion source 10
Applied voltage is 450V.
Please also refer to Fig. 5 (dotted line in Fig. 5 between two discharge electrodes is electrical discharge arc), the utility model passes through MEMS works
Skill or other micro fabrications obtain first screw electrode 100 of coplanar and parallel interval setting and second spiral
Electrode 200, and a layer insulating is covered each by realize dielectric barrier discharge in the opposite side wall of two electrodes.Two interelectrode
Straight slot is helical discharge raceway groove 300.The width of the helical discharge raceway groove 300 can accomplish 10 microns -100 microns.With institute
Stating the positively related applied voltage of width of helical discharge raceway groove 300 can also reduce, and to reduce electric consumption, and avoid big voltage pair
Ambient enviroment impacts.The helical structure of the dielectric barrier discharge ion source 10 can obtain longer under same homalographic
Helical discharge raceway groove 300, to obtain the ionization area of bigger.
Each technical characteristic of embodiment described above can be combined arbitrarily, to keep description succinct, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, it is all considered to be the range of this specification record.
Above-described embodiments merely represent several embodiments of the utility model, the description thereof is more specific and detailed,
But it should not be understood as limiting the scope of the patent of the utility model.It should be pointed out that for the common of this field
For technical staff, without departing from the concept of the premise utility, various modifications and improvements can be made, these all belong to
In the scope of protection of the utility model.Therefore, the protection domain of the utility model patent should be determined by the appended claims.
Claims (11)
1. a kind of dielectric barrier discharge ion source, which is characterized in that including：
First screw electrode (100), first screw electrode (100) is band-like, and is extended spirally outward by initiating terminal；
Second screw electrode (200), second screw electrode (200) is band-like, and is extended spirally outward by initiating terminal, described
Second screw electrode (200) is coplanar with first screw electrode (100) and parallel interval is arranged；
First insulating layer (510), first insulating layer (510) are set to first screw electrode (100) and described second
The opposite side wall of screw electrode (200)；
Second insulating layer (520), the second insulating layer (520) are set to second screw electrode (200) and described first
The opposite side wall of screw electrode (100).
2. dielectric barrier discharge ion source according to claim 1, which is characterized in that first screw electrode (100)
It is complementary with second screw electrode (200), and collectively form circular configuration.
3. dielectric barrier discharge ion source according to claim 2, which is characterized in that first screw electrode (100)
The initiating terminal of initiating terminal and second screw electrode (200) be complementary Tai Ji head.
4. dielectric barrier discharge ion source according to claim 1, which is characterized in that the first screw electrode (100) includes
First strip-spiral matrix (110), and cover the first conductive layer (120) of the first strip-spiral matrix (110)；
Second screw electrode (200) includes the second strip-spiral matrix (210), and covering the second strip-spiral matrix
(210) the second conductive layer (220)；
The second strip-spiral matrix (210) is arranged with the first strip-spiral matrix (110) parallel interval.
5. dielectric barrier discharge ion source according to claim 4, which is characterized in that first conductive layer (120) sets
It is placed in the first strip-spiral matrix (110) and the opposite side wall of the second strip-spiral matrix (210)；
Second conductive layer (220) is set to the second strip-spiral matrix (210) and the first strip-spiral matrix
(110) opposite side wall.
6. dielectric barrier discharge ion source according to claim 1, which is characterized in that further include：
The spiral outer peripheral end of first supporting rack (130), first supporting rack (130) and first screw electrode (100) is solid
Fixed connection；
The spiral outer peripheral end of second supporting rack (230), second supporting rack (230) and second screw electrode (200) is solid
Fixed connection.
7. dielectric barrier discharge ion source according to claim 1, which is characterized in that first screw electrode (100)
It is formed with helical discharge raceway groove (300) between second screw electrode (200), helical discharge raceway groove (300) prolong
It is identical as first screw electrode (100) and the extending direction of second screw electrode (200) to stretch direction.
8. dielectric barrier discharge ion source according to claim 7, which is characterized in that the helical discharge raceway groove (300)
Width be 10 microns -100 microns.
9. dielectric barrier discharge ion source according to claim 7, which is characterized in that the helical discharge raceway groove (300)
It is vertical wide than being more than 10:1.
10. dielectric barrier discharge ion source according to claim 1, which is characterized in that first screw electrode (100)
Opposite surface is provided with multiple first salient points (140) with second screw electrode (200)；
The surface of second screw electrode (200) and first screw electrode (100) is provided with multiple second salient points
(240)。
11. the dielectric barrier discharge ion source according to any one of claim 1-10, which is characterized in that further comprise
Power supply (400), the power supply (400) are electrically connected with second screw electrode (200) and first screw electrode (100) respectively
It connects.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721503728.1U CN207800542U (en) | 2017-11-10 | 2017-11-10 | dielectric barrier discharge ion source |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721503728.1U CN207800542U (en) | 2017-11-10 | 2017-11-10 | dielectric barrier discharge ion source |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107946158A (en) * | 2017-11-10 | 2018-04-20 | 中国人民解放军陆军防化学院 | Dielectric barrier discharge ion gun |
-
2017
- 2017-11-10 CN CN201721503728.1U patent/CN207800542U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107946158A (en) * | 2017-11-10 | 2018-04-20 | 中国人民解放军陆军防化学院 | Dielectric barrier discharge ion gun |
| CN107946158B (en) * | 2017-11-10 | 2024-03-26 | 中国人民解放军陆军防化学院 | Dielectric barrier discharge ion source |
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