KR101101751B1 - Plasma generation apparatus - Google Patents

Abstract

The present invention provides a plasma generating apparatus. The apparatus includes a vacuum vessel, a plurality of power electrodes exposed side by side in part or in whole, and extending side by side, and a substrate holder disposed supporting the substrate and spaced vertically apart from the plane in which the power electrodes are disposed. . The power electrodes are line-shaped, the power electrodes are divided into N portions, and RF power is supplied to nodes disposed in the center of the N divided portions.

Capacitively coupled plasma, multi-power supply, standing wave effect

Description

Plasma Generator {PLASMA GENERATION APPARATUS}

The present invention relates to a plasma generating apparatus. More specifically, the present invention relates to a capacitively coupled plasma generating device including a line-shaped electrode.

RF plasma may be classified into inductively coupled plasma and capacitively coupled plasma. The formation of a uniform plasma over a large area is very important in the manufacturing process of a large area flat panel display (FPD) device as well as the manufacturing process of a solar cell. Plasma processes require high process uniformity, high plasma uniformity over a large area, and high plasma density to achieve high process speeds.

A conventional capacitively coupled plasma forms an plasma by applying RF power to one of the electrodes facing each other and placing a substrate on the other electrode. In large areas, the capacitively coupled plasma has low plasma uniformity and process uniformity due to standing wave effects.

One technical problem to be solved by the present invention is to provide a plasma generation apparatus for polysilicon deposition having a small lattice defect density, high growth rate, and process uniformity.

A plasma generating apparatus according to an embodiment of the present invention supports a vacuum vessel, a plurality of power electrodes exposed side by side in part or all of the vacuum vessel, and a substrate, and in a plane in which the power electrodes are arranged. And a substrate holder disposed vertically spaced apart. The power electrodes are line-shaped, the power electrodes are divided into N portions, and RF power is supplied to nodes disposed at the center of the N portions.

In one embodiment of the present invention, the nodes include first and second nodes, the length of the power electrode is L, the first node is located at L / 4, and the second node is at 3L / 4. It can be located at

In one embodiment of the present invention, the nodes include first to third nodes, the length of the power electrode is L, the first node is located at L / 6, and the second node is L / 2. The third node may be located at 5L / 6.

In one embodiment of the present invention, the nodes include first to fourth nodes, the length of the power electrode is L, the first node is located at L / 8, and the second node is 3L / 8. The third node may be located at 5L / 8, and the fourth node may be located at 7L / 8.

In one embodiment of the present invention, it may further include a ground electrode disposed between both sides of the power electrodes and the power electrodes.

In one embodiment of the present invention, the ground electrodes are connected to each other at both ends of the power electrodes to form a top plate, the top plate may be a lid of the vacuum container.

In one embodiment of the present invention, the power electrodes may be disposed inside the vacuum vessel.

In one embodiment of the present invention, further comprising a distribution unit for transmitting power of the RF power to the power supply electrodes, wherein the distribution unit connects the power supply electrodes in parallel to the RF power supply, the power supply electrodes and the The wiring length between the RF power sources may be the same.

In one embodiment of the present invention, the distribution unit may be disposed inside the vacuum container.

In one embodiment of the present invention, further comprising a distribution unit for transmitting power to the power electrodes, the distribution unit distribution plate, contact plugs for filling the contact holes through the distribution substrate, and the distribution substrate in the And electrical wires electrically connected to the contact plugs, wherein the contact plugs may be electrically connected to the nodes.

In one embodiment of the present invention, the substrate holder may be in an electrically floating state.

A plasma generating apparatus according to an embodiment of the present invention includes a plurality of power electrodes extending side by side in a first direction, and an RF power input terminal and a plurality of RF power output terminals to transfer power of an RF power source to the power electrodes. It includes a distribution unit. Each of the power supply electrodes receives RF power at a plurality of nodes of the power supply electrodes through the RF power output terminals, the power supply electrodes are divided into N portions, and the nodes are disposed at a central portion of the N divided portion.

In one embodiment of the present invention, the distribution unit includes a distribution substrate, a contact plug for filling a contact hole penetrating through the distribution substrate, and electrical wiring electrically connected to the contact plug in the distribution substrate, wherein the contact plug May be electrically connected to the nodes.

In one embodiment of the present invention, the wiring distance between the RF power input terminal and the RF power output terminal may be the same.

In one embodiment of the present invention, the frequency of the RF power source may be 13.56 Mhz to 200 Mhz.

The plasma generating apparatus according to an embodiment of the present invention receives the first to fourth power supply electrodes extending side by side in a first direction, and the power of the RF power source to the RF power input terminal and through the plurality of RF power output terminals. To a fourth power supply electrode. Each of the power electrodes is supplied with RF power at a plurality of nodes of the power electrode through the RF power output terminals, and the wiring portion is formed in a second direction crossing the first direction and the first direction about a central axis. The mirrors are wired symmetrically.

In one embodiment of the present invention, the first to fourth power electrodes may be linear.

According to an embodiment of the present invention, a plasma generating apparatus includes a plurality of power electrodes exposed in a vacuum container and extending in a first direction, ground electrodes disposed between and between the plurality of power electrodes, and an RF power source. A wiring unit receiving power to an RF power input terminal and supplying RF power to the plurality of power electrodes through a plurality of RF power output terminals, wherein the RF power output terminals of the wiring unit are provided at a plurality of points at each of the power electrodes; Supply power.

In one embodiment of the present invention, the wiring distance between the RF power input terminal and the RF power output terminal may be the same.

The plasma generating apparatus according to an embodiment of the present invention may have a structure of a divided power electrode. The divided power electrode may have a line shape, and may supply RF power to a plurality of points to reduce the standing wave effect in the longitudinal direction of the power electrode and form a uniform plasma. In addition, the ground electrodes may be disposed between the power electrodes to form stable and independent plasmas, to remove standing wave effects in a direction perpendicular to the length direction of the power electrodes, and to maintain the substrate in a floating state. Accordingly, the lattice defect density of the substrate due to the impact of the plasma can be reduced. The distance between the power supply electrode and the substrate may be several cm or less at a high pressure of several torr.

In a flat panel display process or a solar cell process having a large area of 1 m x 1 m or more, the density of the capacitively coupled plasma may not be uniform due to standing wave effects. The standing wave effect may worsen plasma uniformity.

In solar cell processes using polysilicon, high growth rates and low lattice defect densities of the polysilicon are required. Therefore, a polysilicon plasma deposition apparatus having a small lattice defect density, high growth rate, and process uniformity is the most important problem of a thin film solar cell.

Increasing the driving frequency of the capacitively coupled plasma can reduce ion bombardment energy, increase electron density, and decrease electron temperature. However, as the driving frequency increases, the standing wave effect may increase, thereby decreasing the plasma uniformity. Therefore, there is a need for a method of obtaining a high density uniform plasma at a driving frequency of 13.56 Mhz or more. The standing wave effect may vary according to a position where the RF power is applied to a power electrode.

The plasma generating apparatus according to an embodiment of the present invention applies RF power of 13.56 Mhz to 200 Mhz to a plurality of line-shaped power electrodes. In order to reduce the standing wave effect in the longitudinal direction of the electrode, each of the power supply electrodes is supplied with power at a plurality of positions. Right and left current distributions around the power supply position may be symmetrical. In addition, a ground electrode is disposed between the power electrodes. Since the plasma can be generated between the power supply electrode and the ground electrode, the substrate can be in a floating state. The substrate can reduce the impact of the plasma to reduce the lattice defect density. The ground electrode also serves to remove the standing wave effect in a direction perpendicular to the length direction of the electrode by making the power electrodes separate from each other.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described herein and may be embodied in other forms. Rather, the embodiments introduced herein are provided so that the disclosure may be made thorough and complete, and to fully convey the spirit of the invention to those skilled in the art. In the drawings, the components have been exaggerated for clarity. Portions denoted by like reference numerals denote like elements throughout the specification.

1A to 1C are diagrams illustrating a plasma generating apparatus according to an embodiment of the present invention. FIG. 1B is a cross-sectional view taken along the line II ′ of FIG. 1A. FIG. 1C is a cross-sectional view taken along the line II-II 'of FIG. 1A.

1A to 1C, the plasma generating apparatus 100 includes a vacuum container 110, a plurality of power electrodes 140 exposed and disposed in parallel with the inside of the vacuum container 110, and a substrate 174. ) And a substrate holder 172 spaced vertically apart from the plane in which the power electrodes 140 are disposed. The power electrodes 140 have a line shape. The power electrodes 140 are divided into N portions, and RF power is supplied to the nodes N1 and N2 disposed at the center of the N divided portions.

The vacuum container 110 may have a pressure below atmospheric pressure. The vacuum container 110 may be a rectangular parallelepiped container. A gas inlet (not shown) and a gas exhaust unit (not shown) may be disposed in the vacuum container 110. The gas inlet may provide a process gas to the vacuum container 110. The gas exhaust unit may discharge the process gas and the reaction byproduct of the vacuum vessel 110 to the outside. The plasma generating apparatus 100 may form amorphous or polycrystalline silicon on the substrate 174.

The substrate 174 may be disposed on the substrate holder 172. The substrate holder 172 may be disposed to face the top plate 120. The substrate 174 may be a semiconductor substrate, a glass substrate, or a dielectric substrate. The substrate 174 may be a rectangular substrate. The material deposited on the substrate 174 may be amorphous or polycrystalline silicon. The substrate holder 172 may include a heating unit (not shown). The heating unit may heat the substrate 174. The temperature of the substrate may be from room temperature to 300 degrees Celsius. The substrate 172 or the substrate holder 174 may be electrically floated. An interval between the substrate 172 and the power electrode 140 may be several cm.

The upper plate 120 may be disposed on an upper surface of the vacuum container 110. The vacuum container 110 may include the upper plate 120. The upper plate 120 may be metal. The top plate 120 may be aluminum or stainless steel. The upper plate 120 may have a square plate shape. The upper plate 120 and the vacuum container 110 may be in close contact with each other to maintain vacuum.

The upper plate 120 may include a plurality of slits 121. The slits 121 may maintain a constant interval. The slits 121 may extend in a first direction. The slit 121 may include a slit tuck 123. The top plate 120 may be grounded.

The insulating spacer 130 may be disposed to be inserted into the slit tuck 123. The insulating spacer 130 may be a dielectric. The insulating spacer 130 may include at least one of ceramic, plastic, and semiconductor. The insulating spacer 130 may include an insulating spacer tuck 131. The insulating spacer 130 and the upper plate 120 may maintain a vacuum. The insulating spacer 130 may electrically separate the power electrode 140 and the upper plate 120.

The power electrode 140 may be disposed to be inserted into the insulating spacer 130. The power electrode 140 may maintain a vacuum with the insulating spacer 130. The power electrode 140 may be a conductive material. The power electrode 140 may extend side by side in the first direction. The power electrode 140 may be disposed to be caught by the insulating spacer tuck 131. The power electrodes 140 may be sequentially arranged in a second direction. The power electrodes 140 may be paired, and four neighboring power electrodes may form a group.

 In the capacitively coupled plasma, as the frequency of the RF power source 164 increases, the plasma density may increase. However, if the frequency of the RF power supply 164 increases, the standing wave effect may increase. The standing wave effect may limit plasma uniformity and process uniformity. The supply of RF power to the nodes N1 and N2 of the power electrode 140 may reduce the standing wave effect. The plasma density distribution may be changed according to the position where the RF power is supplied to the power electrode 140.

The power electrodes 140 may be divided N evenly. RF power is supplied to a central portion of the N-divided portion of the power electrode 140. That is, the nodes N1 and N2 of the power electrode 140 are located at the center of the divided portion. The current distribution and / or the voltage distribution of the power electrode 140 may be symmetrical with respect to the center of the power electrode 140.

The power electrodes 140 may include a plurality of nodes N1 and N2. The nodes N1 and N2 may supply power of the RF power source 164 to the power electrode 140. The nodes N1 and N2 include a first node N1 and a second node N2. The length of the power electrode 140 is L. The first node N1 may be located at L / 4, and the second node N2 may be located at 3L / 4. The current at the nodes N1 and N2 may have a maximum value, and the voltage at the nodes N1 and N2 may have a minimum value. The distribution of the current or the voltage may be symmetrical about the center of the nodes N1 and N2. The phases of the voltages at the nodes N1 and N2 may be in phase.

Ground electrodes 122 may be disposed between the power electrodes 140. The ground electrodes 122 may be connected to each other at both ends to constitute the upper plate 120. Ground electrodes 122 may be disposed on both sides of the power electrode 140. The power electrode 140 and the ground electrode 122 may form a cathode and an anode. Plasma may be formed inside the vacuum vessel 110. The structure in which the power electrode 140 and the ground electrode 122 are adjacent to each other may improve stability of the plasma. In addition, the plasma potential and / or DC bias of the plasma can be reduced. In addition, the substrate may be floated, such that the plasma generating device may provide low grating defects in a deposition process.

The distribution unit 150 may be a means for transferring power from the RF power source 164 to the power electrodes 140. The distribution unit 150 may include a contact plug 152 filling the distribution substrate 151, a contact hole 153 penetrating through the distribution substrate 151, and the contact plug 152 in the distribution substrate 151. Electrical wirings 154, 156, and 158 that are electrically connected. The contact plug 152 may be electrically connected to the nodes N1 and N2. The contact plug 152 and the nodes N1 and N2 may be connected by using direct contact or connecting means. The distribution unit 150 may be disposed on the upper plate 120. Alternatively, the distribution unit 150 may be disposed outside the vacuum container 120.

The distribution substrate 151 may be a printed circuit board or a ceramic substrate. The distribution substrate 151 may have a structure of two or more layers. The distribution substrate 151 may be a double-sided substrate. The contact plug 152 may be a conductive material. The contact plug 152 may include copper or aluminum. The electrical wires 154, 156, and 158 may be formed on one or both surfaces of the distribution substrate 151.

The distribution unit 150 may include an RF power input terminal IN1 and RF power output terminals O1 and O2. The RF power input terminal IN1 may be located at the center of the distribution unit 150. The RF power output terminals O1 and O2 may be disposed to face the nodes N1 and N2.

The contact plug 152 may be disposed at an L / 4 point and a 3L / 4 point in the longitudinal direction of the power electrode 140. The electrical wires 154, 156, and 158 may connect the RF power input terminal IN1 to the RF power output terminals O1 and O2. The electrical wires 154, 156, and 158 may be disposed on the same plane. The wiring distance between the RF power input terminal IN1 and the RF power output terminals O1 and O2 may be the same. Accordingly, phases of the voltages of the RF power output terminals O1 and O2 may be the same. The electrical wires 154, 156, and 158 may be mirror symmetric in the first direction about the RF power input terminal N1 and in a second direction crossing the first direction.

The first electrical wire 154 extends in the second direction, and the pair of contact plugs 152 may be electrically connected to each other. The second electrical wires 156 may extend in a first direction and may be electrically connected to the first electrical wires 154. The third electrical wire 158 extends in the second direction and may electrically connect the adjacent second electrodes 156 to each other.

The frequency of the RF power source 164 may be 1 Mhz or more. Preferably, the frequency of the RF power source 164 may be 13.56 to 200 Mhz. An impedance matching circuit 162 may be disposed between the RF power source 164 and the RF power input terminal IN1. The impedance matching circuit 162 may be a means for maximally transferring power of the RF power source 164 to a load.

2A to 2C are diagrams illustrating a plasma generating apparatus according to an embodiment of the present invention. FIG. 2B is a cross-sectional view taken along the line III-III ′ of FIG. 2A. FIG. 2C is a cross-sectional view taken along the line IV-IV 'of FIG. 2A. Descriptions overlapping with those described in FIGS. 1A to 1C are omitted.

2A to 2C, the plasma generating apparatus 200 includes a vacuum vessel 210, a plurality of power electrodes 240 exposed and disposed in parallel with the inside of the vacuum vessel 210, and a substrate 274. ) And a substrate holder 272 spaced vertically apart from the plane in which the power electrodes 240 are disposed. The power electrodes 240 have a line shape. The power electrodes 240 are divided into N portions, and RF power is supplied to the nodes N1 and N2 disposed in the center of the N divided portions.

The upper plate 220 may be disposed on an upper surface of the vacuum container 210. The vacuum container 210 may include the upper plate 220. The upper plate 220 may be an insulator. The upper plate 220 may have a square plate shape. The upper plate 220 and the vacuum container 210 may be in close contact with each other to maintain a vacuum.

The upper plate 220 may include a plurality of power electrode slits 241 and a plurality of ground electrode slits 243. The power electrode slits 241 and the ground electrode slits 243 may be maintained at a constant interval. The power electrode slits 241 and the ground electrode slits 243 may extend in a first direction. The power electrode slit 241 may be disposed between adjacent ground electrode slits 243. The power electrode 240 may be inserted into the power electrode slit 241. The ground electrode 242 may be inserted into the ground electrode slit 243.

The insulating spacer 230 may be disposed between the ground electrode 242 and the power electrode 240. The insulating spacers 230 may be connected to each other to provide the upper plate 220. The insulating spacer 230 may be a dielectric. The insulating spacer 230 may include at least one of ceramic, plastic, and semiconductor. The insulating spacer 230 may electrically separate the power electrode 240 and the ground electrode 242.

The power electrode 240 may be a conductive material. The power electrodes 240 may extend side by side in the first direction. The neighboring power electrodes 240 may be paired, and the four neighboring power electrodes 240 may form a group.

The power electrodes 240 may be N-divided evenly. RF power is supplied to a central portion of the N-divided portion of the power electrode 240. That is, the nodes N1 and N2 of the power electrode 240 are located at the center of the divided portion. The current distribution and / or voltage distribution of the power electrode 240 may be symmetrical with respect to the center of the power electrode.

The power electrodes 240 may include a plurality of nodes N1 and N2. The nodes N1 and N2 may supply the power of the RF power source 264 to the power electrode 240. The nodes N1 and N2 include a first node N1 and a second node N2. The length of the power electrode 240 is L. The first node N1 may be located at L / 4, and the second node N2 may be located at 3L / 4. The current at the nodes N1 and N2 may have a maximum value, and the voltage at the nodes N1 and N2 may have a minimum value. The distribution of the current or the voltage may be symmetrical with respect to the center of the power electrode 240. The phases of the voltages at the nodes N1 and N2 may be in phase.

The ground electrodes 242 may be a conductive material. The ground electrodes 242 may be grounded. The structure in which the power electrode 240 and the ground electrode 242 are adjacent to each other may improve stability of the plasma. In addition, the plasma potential and / or DC bias of the plasma can be reduced. Thus, the plasma generation device in the deposition process can provide low lattice defects.

The distribution unit 250 may be a means for transferring power from the RF power source 264 to the power electrodes 240. The distribution unit 250 may include a distribution board 251, a contact plug 252 penetrating through the distribution board 251, and electrical wires electrically connected to the contact plug 252 at the distribution board 251. 254,256,258). The contact plug 252 may be electrically connected to the nodes N1 and N2. The contact plug 252 and the nodes N1 and N2 may be connected by using direct contact or connecting means. The distribution unit 250 may be disposed on the upper plate 220. Alternatively, the distribution unit 250 may be disposed outside the vacuum container 220.

The distribution substrate 251 may be a plastic substrate, a printed circuit board, or a ceramic substrate. The distribution substrate 251 may have a structure of two or more layers. The distribution substrate 251 may be a double-sided substrate. The contact plug 252 may be a conductive material. The contact plug 252 may include copper or aluminum. The electrical wires 254, 256, and 258 may be formed on one or both surfaces of the distribution substrate 251.

The distribution unit 250 may include an RF power input terminal IN1 and RF power output terminals O1 and O2. The RF power input terminal IN1 may be located at the center of the distribution unit 250. The RF power output terminals O1 and O2 may be disposed to face the nodes N1 and N2.

The contact plug may be disposed at an L / 4 point and a 3L / 4 point in the length direction of the power electrode 240. The electrical wires 254, 256, and 258 may connect the RF power input terminal IN1 and the RF power output terminals O1 and O2. The electrical wires 254, 256, and 258 may be disposed on the same plane. The wiring distance between the RF power input terminal IN1 and the RF power output terminals O1 and O2 may be the same. Accordingly, phases of the voltages of the RF power output terminals O1 and O2 may be the same. The electrical wires 254, 256, and 258 may be mirror symmetrically disposed about the RF power input terminal N1.

3A to 3C are diagrams illustrating a plasma generating apparatus according to an embodiment of the present invention. FIG. 3B is a cross-sectional view taken along the line VV ′ of FIG. 3A. 3C is a cross-sectional view taken along the line VI-VI 'of FIG. 3A. Descriptions overlapping with those described in FIGS. 1A to 1C are omitted.

3A to 3C, the plasma generating apparatus 300 includes a vacuum vessel 310, a plurality of power electrodes 340 exposed and disposed in parallel with the inside of the vacuum vessel 310, and a substrate 374. ) And a substrate holder 372 spaced vertically from the plane in which the power electrodes 340 are disposed. The power electrodes 340 have a line shape. The power electrodes 340 are divided into N portions, and RF power is supplied to the nodes N1 and N2 disposed at the center of the N divided portions.

The upper plate 320 may be disposed on an upper surface of the vacuum container 310. The vacuum container 310 may include the upper plate 320. The upper plate 220 may be a conductor or an insulator. The upper plate 320 may have a square plate shape. The upper plate 320 and the vacuum container 310 may be in close contact with each other to maintain a vacuum. The upper plate 220 may include a power supply through hole 384.

The power electrode 340 may be a conductive material. The power electrodes 340 may extend side by side in the first direction. The neighboring power electrodes 340 may be paired, and the four neighboring power electrodes 340 may form a group. The power electrode 340 may be disposed in the vacuum container 310.

The power electrodes 340 may be divided N evenly. RF power is supplied to a central portion of the N-divided portion of the power electrode 340. That is, the nodes N1 and N2 of the power electrode 340 are located at the center of the divided portion. The current distribution and / or voltage distribution of the power electrode 340 may be symmetrical with respect to the center of the power electrode.

The power electrodes 340 may include a plurality of nodes N1 and N2. The nodes N1 and N2 may supply the power of the RF power 364 to the power electrode 340. The nodes N1 and N2 include a first node N1 and a second node N2. The length of the power electrode 340 is L. The first node N1 may be located at L / 4, and the second node N2 may be located at 3L / 4. The current at the nodes N1 and N2 may have a maximum value, and the voltage at the nodes N1 and N2 may have a minimum value. The distribution of the current or the voltage may be symmetric with respect to the center of the power electrode 340. The phases of the voltages at the nodes N1 and N2 may be in phase.

The ground electrodes 342 may be a conductive material. The ground electrodes 342 may extend side by side in the first direction. The ground electrodes 342 may be grounded. The structure in which the power electrode 340 and the ground electrode 342 are adjacent to each other may improve stability of the plasma. In addition, the plasma potential and / or DC bias of the plasma can be reduced. Thus, the plasma generation device in the deposition process can provide low lattice defects. Ground electrodes may be electrically connected through ground plugs and ground wires.

The distribution unit 350 may be a means for transferring power from the RF power source 364 to the power electrodes 340. The distribution unit 350 may include a distribution board 351, a contact plug 352 penetrating through the distribution board 351, and an electrical wire electrically connected to the contact plug 352 on the distribution board 351. 354,356,358). The contact plug 352 may be electrically connected to the nodes N1 and N2. The contact plug 352 and the nodes N1 and N2 may be connected by using direct contact or connecting means. The distribution unit 350 may be disposed below the upper plate 320. Alternatively, the distribution unit 350 may be disposed in the vacuum container 320.

The distribution substrate 351 may be a plastic substrate, a printed circuit board, or a ceramic substrate. The contact plug 352 may be a conductive material. The contact plug 352 may include copper or aluminum. The electrical wires 354, 356, and 358 may be formed on one or both surfaces of the distribution substrate 351. The power electrode 340 and the ground electrode 342 may be disposed under the distribution substrate 351.

The distribution unit 350 may include an RF power input terminal IN1 and RF power output terminals O1 and O2. The RF power input terminal IN1 may be located at the center of the distribution unit 350. The RF power output terminals O1 and O2 may be disposed to face the nodes N1 and N2.

The contact plug 352 may be disposed at an L / 4 point and a 3L / 4 point in the length direction of the power electrode 340. The electrical wires 354, 356, and 358 may connect the RF power input terminal IN1 to the RF power output terminals O1 and O2. The electrical wires 354, 356, 358 may be disposed on the same plane. The wiring distance between the RF power input terminal IN1 and the RF power output terminals O1 and O2 may be the same. Accordingly, phases of the voltages of the RF power output terminals O1 and O2 may be the same. The electrical wires may be mirror symmetrically disposed about the RF power input terminal.

The ground plug 341 may be disposed through the distribution substrate 351. The ground wire 343 may electrically connect the ground plug 341. The ground wire 341 may be disposed on the same plane as the electrical wires 354, 356, and 358. An insulating plate 351 may be disposed between the electrical wires 354, 356, 358 and the upper plate 320. The insulating plate may include an insulating through hole 386 aligned with the power supply through hole 384. The RF power plug 382 may be disposed in the power supply through hole 384 and the insulating through hole 386, and may be connected to the RF power input terminal IN1.

4 is a view for explaining a position for supplying power to a power electrode according to an embodiment of the present invention.

Referring to FIG. 4, the power electrode 10 may extend with a predetermined length (L). Some or all of the power electrode 10 may be exposed inside the vacuum vessel. The power electrode 10 may be equally divided into the first portion 10a and the second portion 10b. RF power may be supplied to a first node N1 located at the center of the first portion 10a. In addition, RF power may be supplied to the second node N2 located in the center of the second portion 10b. The current supplied through the first node N1 and the second node N may charge the power electrode 10.

The current of the power electrode 10 may be symmetrical about the first node N1. The first current I1 is a current in a left direction at the first node N1, and the second current I2 is a current in a right direction at the first node N1. A current may be zero at both ends of the power supply electrode 10. At a specific time, the absolute value of the voltage of the first node N1 of the power electrode 10 may be minimum.

The current of the power electrode 10 may vary depending on the location. The current of the power electrode 10 may change with time. The current of the power electrode at the reference time is positive and represented by a solid line. After half period (T / 2) at the reference time, the current of the power electrode has a negative value and is indicated by a dotted line.

The voltage distribution of the power electrode 10 may be represented by the sum of the base component V _RF and the modulation component V _MOD . The voltage and the current may have a phase difference of 90 degrees with each other. The absolute value of the voltage of the power electrode 10 may have a minimum value at the first node N1 and the second node N2.

The ratio (V _MOD / V _RF ) of the modulation component (V _MOD ) to the base component (V _RF ) of the power supply voltage may affect the capacitively coupled plasma efficiency. Thus, the ratio (V _MOD / V _RF ) of the modulation component (V _MOD ) to the base component (V _RF ) of the power supply voltage may affect the uniformity of the plasma density. As the ratio (V _MOD / V _RF ) of the modulation component (V _MOD ) to the base component (V _RF ) of the power supply voltage is smaller, a uniform plasma may be formed.

When the first node N1 is not located at the center of the first portion 10a, the first current I1 in the left direction at the first node N1 and the right direction in the first node N1 are not included. The second current I2 may be different from each other. In addition, the voltage of the power electrode 10 may be asymmetrical with respect to the first node N1. Thus, the plasma uniformity can be reduced. An RF power supply and the first and second nodes N1 and N2 may be connected in parallel.

5 is a view for explaining a position of supplying power to a power electrode according to another embodiment of the present invention.

Referring to FIG. 5, the power electrode 12 may extend with a predetermined length L. FIG. Some or all of the power supply electrodes 12 may be exposed inside the vacuum vessel. The power electrode 12 may be equally divided into the first part 12a, the second part 12b, and the third part 12c. RF power may be supplied to the first to third nodes N1, N2, and N3 positioned at the centers of the first to third portions 12a, 12b, and 12c. An RF power source and the first to third nodes N1, N2, and N3 may be connected in parallel.

6A and 6B are diagrams illustrating a position at which power is supplied to a power electrode according to still another embodiment of the present invention, and a diagram illustrating a computer simulation result of an electric field.

Referring to FIG. 6A, the power electrode 14 may extend with a predetermined length L. FIG. Some or all of the power supply electrodes 14 may be exposed inside the vacuum vessel. The power electrode 14 may be evenly divided into a first portion 14a, a second portion 14b, a third portion 14c, and a fourth portion 14c. RF power may be supplied to the first to fourth nodes N1, N2, N3, and N4 located at the centers of the first to fourth portions 14a, 14b, 14c, and 14d. The RF power source and the first to fourth nodes N1, N2, N3, and N4 may be connected in parallel.

Referring to FIG. 6B, the length L of the power electrode 14 may be 1500 mm. The electric field is the strength of the electric field at the surface of the power electrode 14. The electric field is symmetrical about the first to fourth nodes N1 to N4. The spatial distribution of the electric field may be proportional to the spatial distribution of the plasma density. Accordingly, a plasma uniform in the longitudinal direction may be formed directly under the power electrode 14. According to the computer simulation results, the uniformity of the longitudinal electric field was 1.5 percent at the driving frequency of 40 MHz.

According to a modified embodiment of the present invention, as the number of nodes increases, the uniformity of the electric field increases.

7 is a view illustrating a connection relationship between power electrodes according to an embodiment of the present invention.

Referring to FIG. 7, the plasma generating apparatus 400 includes a plurality of power electrodes 440a to 440d extending in parallel in a first direction, an RF power input terminal IN1, and a plurality of RF power output terminals O1 and O2. And a distribution unit 450 configured to transfer power of RF power to the power electrodes 440a to 440d. Each of the power electrodes 440a to 440d is supplied with RF power at the nodes N1 and N2 of the power electrode 440a through the RF power output terminals O1 and O2. Each of the power electrodes 440a to 440d is divided into N portions, and the nodes N1 and N2 are disposed at the center of the N divided portions.

The power electrodes 440a to 440d may be disposed in a vacuum container (not shown) or may penetrate the vacuum container. The power electrodes 440a to 440d may have a straight shape. The shape of the power electrodes 440a to 440d may be variously modified. The power electrodes 440a to 440d may extend in a first direction with a predetermined length L. The power electrodes 440a to 440d may be equally divided into a first portion and a second portion. RF power may be supplied to a first node N1 located at the center of the first portion. In addition, RF power may be supplied to a second node N2 located at the center of the second portion.

The distribution unit 450 may include a contact plug 452 and an electrical wire 451 electrically connected to the contact plug 452. The contact plug 452 is electrically connected to the nodes N1 and N2. The electrical wiring 451 may be formed by patterning a conductor plate.

Terminals of the contact plugs 452 may be the RF power output terminals O1 and O2. The wiring distance between the RF power input terminals IN1 and O2 may be the same. The frequency of the RF power source may be 20 Mhz to 200 Mhz. Accordingly, the standing wave effect may be reduced by power multi-feeding of the power electrodes 440a to 440d. The electrical wire 451 may have a mirror symmetry with respect to a first direction and a second direction perpendicular to the first direction with respect to the RF power input terminal IN1.

Ground electrodes 442a to 442e may be disposed between and at both sides of the power electrodes 440a to 440d. The ground electrodes 442a to 442e may be grounded. The power electrodes 440a to 440d and the ground electrodes 442a to 442e may form a plasma.

According to a modified embodiment of the present invention, each of the power electrodes 440a to 440d may be divided into N portions, and the nodes N1 and N2 may be offset from the center of the N divided portions.

According to a modified embodiment of the present invention, the distribution unit 450 may be disposed inside or outside the vacuum container.

8A to 8D are diagrams illustrating a connection relationship between power electrodes according to still another embodiment of the present invention.

Referring to FIG. 8A, the plasma generator 400a receives the first to fourth power electrodes 440a to 440d extending in parallel in the first direction, and the power of the RF power to the RF power input terminal IN1. The wiring unit 450 may be distributed to the first to fourth power electrodes 440a to 440d through a plurality of RF power output terminals O1 and O2. Each of the power electrodes 440a to 440d receives RF power from the plurality of nodes N1 and N2 of the power electrodes 440a to 440d through the RF power output terminals O1 and O2. The wiring unit 450 is mirror-symmetrically wired in a first direction and a second direction crossing the first direction about a central axis.

The first to fourth power electrodes 440a to 440d may have a straight line shape. The nodes N1 and N2 may be located at L / 4 and 3L / 4 points of the first to fourth power electrodes 440a to 440d.

 The wiring unit 450 may include an electrical wiring 451a and a contact plug 452. The contact plug 452 may change a plane on which the electrical wire 451a is disposed. The electrical wiring 451a may be disposed on the same plane. The RF power output terminals O1 and O2 may be ends of the contact plug 452. The RF power input terminal IN1 may be disposed at the center of the wiring unit 450. The wiring unit 450 may include an “H” shape. The “H” shape may be aligned in the second direction. The contact plugs 452 may be disposed on the nodes N1 and N2.

The neighboring contact plugs 452 of the power electrodes 440a and 450b that are adjacent to each other may be connected to each other through the electrical wiring 451a. The four arms of the “H” shaped electrical wire and the electrical wires connecting the contact plugs 452 may be connected to each other.

Referring to FIG. 8B, the plasma generating device 400b may include first to fourth power electrodes 440a to 440d and a wiring unit 450. The electrical wire 451b may have mirror symmetry in a first direction and a second direction about the RF power input terminal IN1. The electrical wiring 451b may include an “H” shape, and the “H” shape may be aligned in a first direction.

Referring to FIG. 8C, the plasma generating apparatus 400c may include first to fourth power electrodes 440a to 440d and a wiring unit 450. The electrical wire 451c may have mirror symmetry in a first direction and a second direction about the RF power input terminal. The electrical wiring 451c may include an “X” shape, and the “X” shape may be aligned in the first direction.

Referring to FIG. 8D, the power electrode and the wiring unit described with reference to FIG. 8A may be disposed symmetrically. The plasma generator 400d may include first to fourth power electrodes 440a to 440d and a wiring unit 450. The wiring unit 450 may include a first wiring unit 450a and a second wiring unit 450b. The first wiring part 450a and the second wiring part 450b may be connected to each other. The power input terminal IN1 of the wiring unit 450 may be positioned at the center of the first wiring unit 450a and the second wiring unit 450b.

9 is a view for explaining a connection relationship between power electrodes according to another embodiment of the present invention.

Referring to FIG. 9, the plasma generating apparatus 500 includes a plurality of power electrodes 540a to 540d exposed in the vacuum chamber and extending in a first direction, between the plurality of power electrodes 540a to 540d, and The ground electrodes 542 disposed on both sides and the RF power are input to the RF power input terminal N1 to the plurality of power electrodes 540a to 540d through the plurality of RF power output terminals O1 to O4. A wiring unit 550 for supplying RF power is included. The RF power output terminals O1 to O4 of the wiring unit 550 supply RF power to a plurality of points to each of the power electrodes 540a to 540d. The wiring distance between the RF power output terminals O1 to O4 in the RF power input terminal IN1 may be the same.

The power electrodes 540a to 540d may form a first group 551a. The second group 551b may be arranged in mirror symmetry with the second group. Power electrodes 542 may be disposed between the power electrodes 550a to 550d and at both sides thereof.

Each of the power electrodes 540a to 540d may be divided into four equal parts. First to fourth nodes N1 to N4 may be disposed at the centers of the quartered areas. The wiring unit 550 may include a first wiring unit 550a and a second wiring unit 550b. The first wiring part 550a may include a first electrical wire 551a connecting the first nodes N1 and the second nodes N2. The second wiring part 550b may include a second electrical wire 551b connecting the third nodes N3 and the fourth nodes N4. The wiring unit 550 may have mirror symmetry in a first direction and a second direction.

According to a modified embodiment of the present invention, the first wiring portion 550a may be connected to a first RF power supply, and the second wiring portion 550b may be connected to a second RF power supply.

According to a modified embodiment of the present invention, when the power supply electrodes are 16, the wiring part may further include another wiring part having mirror symmetry with the wiring part. The wiring portion may have a two-layer structure.

So far I looked at the center of the preferred embodiment for the present invention. Those skilled in the art will appreciate that the present invention can be implemented in a modified form without departing from the essential features of the present invention. Therefore, the disclosed embodiments should be considered in descriptive sense only and not for purposes of limitation. The scope of the present invention is shown in the claims rather than the foregoing description, and all differences within the scope will be construed as being included in the present invention.

1A to 1C are diagrams illustrating a plasma generating apparatus according to an embodiment of the present invention.

2A to 2C are diagrams illustrating a plasma generating apparatus according to an embodiment of the present invention.

3A to 3C are diagrams illustrating a plasma generating apparatus according to an embodiment of the present invention.

4 is a view for explaining a position for supplying power to a power electrode according to an embodiment of the present invention.

5 is a view for explaining a position of supplying power to a power electrode according to another embodiment of the present invention.

6A and 6B are diagrams illustrating a position at which power is supplied to a power electrode according to still another embodiment of the present invention, and a diagram illustrating a computer simulation result of an electric field.

7 is a view illustrating a connection relationship between power electrodes according to an embodiment of the present invention.

8A to 8D are diagrams illustrating a connection relationship between power electrodes according to still another embodiment of the present invention.

9 is a view for explaining a connection relationship between power electrodes according to another embodiment of the present invention.

Claims (19)

A vacuum vessel; A plurality of power electrodes exposed in part or in whole and extending in parallel with the vacuum container; And A substrate holder supporting the substrate, the substrate holder being vertically spaced apart from the plane in which the power electrodes are disposed; The power electrodes are line-shaped, And the power electrodes are divided into N portions, and RF power is supplied to nodes disposed at the center of the N portions. The method according to claim 1, Wherein the nodes comprise first and second nodes, the length of the power electrode is L, the first node is located at L / 4, and the second node is located at 3L / 4. Device. The method according to claim 1, The nodes include first to third nodes, wherein the length of the power electrode is L, the first node is located at L / 6, the second node is L / 2, and the third node is 5L / 6. Plasma generator, characterized in that located in. The method according to claim 1, The nodes include first to fourth nodes, the length of the power electrode is L, the first node is located at L / 8, the second node is 3L / 8, and the third node is 5L / 8. And the fourth node is located at 7L / 8. The method according to claim 1, And a ground electrode disposed on both sides of the power electrodes and between the power electrodes. 6. The method of claim 5, The ground electrodes are connected to each other across the power electrodes to form a top plate, The top plate is a plasma generator, characterized in that the lid of the vacuum container. Claim 7 was abandoned upon payment of a set-up fee. The method according to claim 1, And the power supply electrodes are disposed inside the vacuum vessel. The method according to claim 1, Further comprising a distribution unit for transferring the power of the RF power to the power supply electrodes, The distribution unit connects the power electrodes in parallel to the RF power source, And a wiring length between the power electrodes and the RF power source is the same. Claim 9 was abandoned upon payment of a set-up fee. The method of claim 8, And the distribution unit is disposed in the vacuum container. The method according to claim 1, Further comprising a distribution unit for transmitting power to the power electrodes, The distribution unit: Distribution substrates; Contact plugs filling the contact holes penetrating the distribution substrate; And Electrical wiring electrically connected to the contact plugs in the distribution substrate; And the contact plugs are electrically connected to the nodes. Claim 11 was abandoned upon payment of a setup registration fee. The method according to claim 1, And the substrate holder is in an electrically floating state. A plurality of power electrodes extending side by side in a first direction; And A distribution unit including an RF power input terminal and a plurality of RF power output terminals and delivering power of RF power to the power electrodes; Each of the power electrodes receives RF power at a plurality of nodes of the power electrodes through the RF power output terminals, And the power electrodes are divided into N equal parts, and the nodes are disposed at the center of the N equalized part. 13. The method of claim 12, The distribution unit: Distribution substrates; A contact plug filling a contact hole penetrating the distribution substrate; And Electrical wiring electrically connected to the contact plug in the distribution substrate; And the contact plug is electrically connected to the nodes. Claim 14 was abandoned when the registration fee was paid. 13. The method of claim 12, And a wiring distance between the RF power input terminals at the RF power input terminal is the same. Claim 15 was abandoned upon payment of a registration fee. 13. The method of claim 12, The frequency of the RF power source is a plasma generator, characterized in that 13.56 Mhz to 200 Mhz. First to fourth power electrodes extending in parallel in a first direction; And A wire unit configured to receive power of an RF power source into an RF power input terminal and distribute the RF power to the first to fourth power electrodes through a plurality of RF power output terminals; Each of the power electrodes is supplied with RF power at a plurality of nodes of the power electrode through the RF power output terminals, And the wiring portion is mirror symmetrically wired in a first direction and a second direction crossing the first direction about a central axis. The method of claim 16, And the first to fourth power supply electrodes are linear. A plurality of power electrodes exposed in the vacuum container and extending in the first direction; Ground electrodes disposed between and between the plurality of power electrodes; A wiring unit configured to receive power of an RF power source into an RF power input terminal and supply RF power to the plurality of power electrodes through a plurality of RF power output terminals; RF power output terminals of the wiring unit supply RF power to a plurality of points to each of the power electrodes. Claim 19 was abandoned upon payment of a registration fee. The method of claim 18, And a wiring distance between the RF power input terminals at the RF power input terminal is the same.

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