KR20090017179A - Apparatus and method for treating substrate - Google Patents

Abstract

A substrate processing apparatus and method are provided to efficiently remove the ion-implanted photoresist layer on the substrate by processing selectively the inner side or the outer side of the plasma discharge area. The substrate support member supports the substrate(W). The plasma supply member supplies the plasma to the substrate and has the first electrode(223) and the second electrode(224) acting as the plasma source. The substrate support member is grounded to the ground line(226). The switching unit(227) is arranged on the ground line. The power supply terminal(225a) applies the power in the first electrode. The power supply unit(225) has the ground terminal(225b) grounding the second electrode. The ground line is connected to the ground terminal of the power supply unit.

Description

Substrate processing apparatus and method {APPARATUS AND METHOD FOR TREATING SUBSTRATE}

1 is a view showing an example of a substrate processing apparatus according to the present invention,

FIG. 2 is an enlarged view of the substrate supporting member and the plasma supply member of FIG. 1; FIG.

3 is a view showing another example of a ground line connected to the substrate support member of FIG. 1;

4 is a view illustrating an operating state of a substrate processing apparatus in a state where a switch on a ground line connected to a substrate supporting member is turned off;

5 is a view illustrating an operating state of a substrate processing apparatus in a state where a switch on a ground line connected to a substrate support member is turned on;

6A and 6B show the relative motion between the substrate support member and the plasma supply unit.

<Description of Symbols for Main Parts of Drawings>

100 substrate support member 220 plasma supply unit

223: first electrode 224: second electrode

225: power supply 226: ground line

227: switch

TECHNICAL FIELD The present invention relates to a semiconductor manufacturing apparatus and method, and more particularly, to a substrate processing apparatus and method for removing an unnecessary photosensitive film layer on a substrate using plasma.

Generally, a semiconductor device is manufactured by repeating a process of sequentially stacking thin films to form a predetermined circuit pattern on a silicon substrate, and for forming and stacking thin films, a plurality of unit processes such as a deposition process, a photo process, and an etching process are performed. Must be repeated.

Among such a plurality of unit processes, a photo process is a process for forming a pattern on a substrate, and includes a photoresist coating process, an exposure process, and a developing process. After etching the uppermost layer of the substrate using the pattern formed on the substrate by the developing process, an ashing process of removing the photoresist layer remaining on the substrate is performed to form the device according to the pattern. It becomes possible.

Plasma processing apparatus is generally used as the apparatus for performing the ashing process, which supplies a process gas into the chamber and applies a microwave or high frequency power to form a plasma on the substrate to remove the photoresist layer applied to the substrate. Device.

Such a plasma processing apparatus can be classified into a low pressure plasma processing apparatus, an atmospheric pressure plasma processing apparatus, and the like according to the pressure state in which the atmospheric pressure in the chamber in which the plasma state is formed is present.

The low pressure plasma processing apparatus requires expensive equipment such as a vacuum chamber and a vacuum evacuation apparatus, and also has a problem in that equipment maintenance and vacuum pumping time are lengthened because the configuration in the apparatus is complicated.

For this reason, the atmospheric pressure plasma processing apparatus which processes a board | substrate by generating a plasma under atmospheric pressure which does not require a vacuum equipment is proposed. In the case of an atmospheric pressure plasma processing apparatus, when high frequency power is applied after the discharge electrodes are insulated with a dielectric material having good insulating properties, a silent discharge occurs between the discharge electrodes even at atmospheric pressure, and a carrier gas is applied. Using a stable inert gas, for example, helium (He) and argon (Ar), it is possible to obtain a uniform and stable plasma even under atmospheric pressure.

The present invention is to provide a substrate processing apparatus and method capable of selectively processing a substrate inside or outside the plasma discharge region.

The object of the present invention is not limited thereto, and other objects not mentioned will be clearly understood by those skilled in the art from the following description.

In order to achieve the above object, the substrate processing apparatus according to the present invention includes a substrate support member for supporting a substrate; A plasma supply member for supplying plasma to the substrate and having a pair of first and second electrodes serving as a plasma source; A ground line for grounding the substrate support member; And a switching unit disposed on the ground line.

A substrate processing apparatus according to the present invention having the configuration as described above, further comprising: a power supply having a power supply terminal for applying power to the first electrode and a ground terminal for grounding the second electrode; The ground line may be connected to the ground terminal of the power supply unit.

The ground line may be grounded independently of the second electrode.

The plasma supply member may have a length corresponding to the diameter of the substrate and may be disposed parallel to the upper side of the substrate so as to pass through a central axis perpendicular to the substrate processing surface.

The apparatus may further include a first driver configured to rotate the substrate support member to rotate the substrate while the plasma processing process is performed on the substrate.

And a second driving unit which linearly moves the plasma supply member in a direction perpendicular to the longitudinal direction of the plasma supply member during the plasma processing process with respect to the substrate.

In order to achieve the above object, the substrate processing method of the present invention is a method for removing an ion implanted photoresist layer on a substrate by using a plasma, wherein the substrate having the ion implanted photoresist layer is formed in a plasma generating region ( And iii) removing the cured top region of the ion implanted photoresist layer using a plasma.

In the substrate processing method according to the present invention having the configuration as described above, it is provided so that the substrate from which the cured top region is removed is located outside the plasma generation region, and the cured top region using plasma You can remove the bottom area below.

In order to achieve the above object, the substrate processing method according to the present invention, by supplying a plasma to the substrate placed on the substrate support member to remove the photoresist used for ion implantation on the substrate, the removal of the cured top region of the photoresist It is characterized in that the process is performed by grounding the substrate support member.

In the substrate processing method according to the present invention having the configuration as described above, upon removal of the cured upper region of the photoresist, the switch provided to the ground line connected to the substrate support member On (On), the photo After removing the cured top region of the resist, the switch may be turned off when the bottom region of the photoresist is removed.

Hereinafter, a substrate processing apparatus and a method according to a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings. First, in adding reference numerals to the components of each drawing, it should be noted that the same reference numerals are assigned to the same components as much as possible, even if shown on different drawings. In addition, in describing the present invention, when it is determined that the detailed description of the related well-known configuration or function may obscure the gist of the present invention, the detailed description thereof will be omitted.

(Example)

1 is a view showing an example of a substrate processing apparatus according to the present invention, Figure 2 is an enlarged view showing the configuration of the substrate supporting member and the plasma supply member of FIG.

1 and 2, the substrate processing apparatus 10 according to the present embodiment is for removing an unnecessary photosensitive film layer on a substrate by using a dry processing method and a wet processing method. The plasma processing unit 200 and the cleaning processing unit 300 are included.

The substrate processing apparatus 10 according to the present embodiment primarily removes the photosensitive film layer on the substrate W placed on the substrate support member 100 using the plasma processing unit 200. Then, the chemical liquid is supplied onto the substrate W using the chemical liquid supply member 320 of the cleaning processing unit 300 to remove the photoresist layer remaining on the substrate W. After removing the photoresist layer on the substrate W, deionized water is supplied onto the substrate W to rinse the substrate W, and the substrate W is dried using the dry gas supply member 340 of the cleaning treatment unit 300. ), The drying gas is supplied to dry the substrate (W).

The substrate support member 100 supports the substrate W during the process, and may be rotated by the driver 140 to be described later during the process. The substrate supporting member 100 has a supporting plate 110 having a circular upper surface, and a pin member 120 supporting the substrate W is installed on the upper surface of the supporting plate 110. The pin member 120 has support pins 122 and chucking pins 124. The support pins 122 are spaced apart from each other at predetermined edges of the upper surface edge portion of the support plate 110, and are provided to protrude upward from the support plate 110. The support pins 122 support the bottom surface of the substrate W so that the substrate W is supported in a state spaced upward from the support plate 110. The chucking pins 124 are disposed outside the support pins 122, and the chucking pins 124 are provided to protrude upward. The chucking pins 124 align the substrate W such that the substrate W supported by the plurality of support pins 122 is placed in position on the support plate 110. During the process, the chucking pins 124 are in contact with the side of the substrate W to prevent the substrate W from being displaced from its position.

A support shaft 130 supporting the support plate 110 is connected to the lower portion of the support plate 110, and the support shaft 130 is rotated by the driving unit 140 connected to the lower end thereof. The driving unit 140 may be provided by a motor or the like. As the support shaft 130 rotates, the support plate 110 and the substrate W rotate, and the plasma, the chemical liquid, and the dry gas, etc., during the process of the substrate processing are rotated due to the rotation of the substrate W. It can supply uniformly to a whole surface. In addition, the driving unit 140 loads the substrate W on the support plate 110 or unloads the substrate W from the support plate 110, and when necessary, in addition to the process, the support plate 110 moves up and down. You can move it.

The plasma processor 200 processes the substrate W by supplying a plasma onto the substrate W placed on the substrate support member 100. The plasma processing unit 200 includes a plasma supply unit 220, a first moving arm 240 and a second moving arm 260 for moving the plasma supply unit 220.

The plasma supply unit 220 may be provided in a hexahedral shape having a length corresponding to the diameter of the substrate W, and disposed in parallel with the substrate W on the upper side of the substrate W. The plasma supply unit 220 may be arranged such that its longitudinal center is aligned with the center of the substrate processing surface according to the process conditions.

One end of the first moving arm 240 is connected to the upper portion of the plasma supply unit 220, and the other end of the first moving arm 240 is connected to the first moving part 242. The first moving part 242 linearly reciprocates the first moving arm 240 in a direction parallel to the substrate W. When the first moving arm 240 moves, the plasma supply unit 220 also moves on the substrate W. FIG. ) Move from the top. One end of the second moving arm 260 is connected to the lower portion of the first moving part 242, and the other end of the second moving arm 260 is connected to the second moving part 262. The second moving unit 262 may move the second moving arm 260 in the vertical direction, as well as rotate the second moving arm 260.

A process gas supply line 270 for supplying a plasma process gas is connected to a lower end of the second moving unit 262. On the processing gas supply line 270, a processing gas supply source 272 and a valve 274 for adjusting a supply flow rate of the processing gas are disposed. The process gas supply line 270 is connected to the plasma supply unit 220 through the first moving arm 240, the first moving part 242, the second moving arm 260, and the second moving part 262. Connected.

As shown in FIG. 2, the plasma supply unit 220 includes a housing 221 having a structure in which a space for plasma generation is provided and a lower portion thereof. The housing 221 has an upper wall 221a having a processing gas inlet 222 formed in the center thereof, and a sidewall 221b extending downward from an edge of the upper wall 221a.

The pair of parallel plate electrodes is provided in the housing 221. The electrode has a first electrode 223 and a second electrode 224 which are installed to face each other in parallel with the side wall 221b of the housing 221. The first electrode 223 and the second electrode 224 may be made of a conductive metal such as stainless steel, aluminum, and copper. Dielectric films 223a and 224a having good insulating properties are provided on inner and upper and lower surfaces of the first electrode 223 and the second electrode 224, respectively. The dielectric films 223a and 224a prevent the first electrode 223 and the second electrode 224 from being damaged by the arc generated when the plasma is generated. Quartz or ceramic may be used as the material of the dielectric films 223a and 224a.

The first electrode 223 and the second electrode 224 are connected to a power supply unit 225 for applying a radio frequency (RF). The power supply unit 225 has a power supply terminal 225a and a ground terminal 225b. The first electrode 223 is connected to the power supply terminal 225a and the second electrode 224 is connected to the ground terminal 225b. The power supply unit 225 applies high frequency power to the first electrode 223 through the power supply terminal 225a to emit electrons for plasma generation from the first electrode 223. It is preferable to use a frequency band of a high frequency (RF) power supply for plasma generation from 50 Hz to 2,45 GHz.

In addition, a ground line 226 for grounding the support plate 110 is connected to the support plate 110 of the substrate support member 100 so that the support plate 110 acts as a ground electrode with respect to the first electrode 223. The ground line 226 may be connected to the ground terminal 225b of the power supply 225 to which the second electrode 224 is grounded. In addition, the ground line 226 may be grounded independently of the second electrode 224, as shown in FIG. 3. The switching unit 227 that opens and closes the ground line 226 is installed on the ground line 226.

An operation state of the substrate processing apparatus according to an on / off state of the switching unit 227 on the ground line 226 will be described below.

4 is a view illustrating an operating state of a substrate processing apparatus in a state where a switch on a ground line connected to a substrate supporting member is turned off.

As shown in FIG. 4, when the switching unit 227 on the ground line 226 is turned off, the first electrode 223 and the second electrode 224 of the plasma supply unit 220 move to the plasma source. Works. Process gas enters through the process gas inlet 222 of the upper wall 221a of the housing 221. When power is supplied from the power supply unit 225 to the first electrode 223, the first electrode 223 and the second electrode 224 are formed by an electric field formed by the first electrode 223 and the second electrode 224. Plasma is generated in the space between. The generated plasma moves to the upper surface of the substrate W by the flow of the processing gas supplied to the plasma supply unit 220 to process the substrate W. In this case, in order to process the entire surface of the substrate W using the generated plasma, relative movement between the substrate support member 100 and the plasma supply unit 220 should be made. For example, as shown in FIG. 6A, the substrate W supported by the substrate support member 100 is fixed, and the plasma supply unit 220 is parallel with the substrate W in a direction perpendicular to the longitudinal direction. Can be moved linearly. Alternatively, as shown in FIG. 6B, the plasma supply unit 220 may be fixed, and the substrate W supported by the substrate support member 100 may be rotated. Plasma treatment in this manner (hereinafter referred to as a "remote (remote)") has the advantage of preventing the destruction of the substrate due to abnormal discharge because the substrate is located outside the plasma generation region. . However, since the remote plasma treatment process has no ion sputtering effect, the ashing rate is lowered.

5 is a view illustrating an operating state of a substrate processing apparatus in a state where a switch on a ground line connected to a substrate support member is turned on.

As shown in FIG. 5, when the switching unit 227 on the ground line 226 is turned on, the first and second electrodes 223 and 224 of the plasma supply unit 220 and the substrate support member 100 are turned on. The support plate 110 acts as a plasma source. This is because a potential difference occurs between the first electrode 223 and the second electrode 224, and a potential difference occurs between the first electrode 223 and the support plate 110 of the substrate support member 100. Process gas enters through the process gas inlet 222 of the upper wall 221a of the housing 221. When power is supplied from the power supply unit 225 to the first electrode 223, the first electrode 223 and the second electrode 224 are formed by an electric field formed by the first electrode 223 and the second electrode 224. Plasma is generated in the space between. The generated plasma moves to the upper surface of the substrate W by the flow of the processing gas supplied to the plasma supply unit 220. At this time, not only the plasma but also the unreacted gas moves to the upper surface of the substrate W. The unreacted gas moves between the first and second electrodes 223 and 224 and the support plate 110 of the substrate support member 100, and the first electrode 223 is formed by an electric field formed by the first electrode 223 and the support plate 110. Plasma is generated in the space between the 223 and the support plate 110. In order to process the entire surface of the substrate W using the generated plasma, relative movement must be made between the substrate support member 100 and the plasma supply unit 220. For example, as shown in FIG. 6A, the substrate W supported by the substrate support member 100 is fixed, and the plasma supply unit 220 is parallel to the substrate W in a direction perpendicular to the longitudinal direction. Can be moved straight. Alternatively, as shown in FIG. 6B, the plasma supply unit 220 may be fixed, and the substrate W supported by the substrate support member 100 may be rotated. The plasma treatment process of this type (hereinafter, referred to as a "direct method") has an advantage in that the ashing rate is improved by the ion sputtering effect because the substrate is located inside the plasma generation region. However, the direct plasma treatment process has a disadvantage in that the substrate is destroyed by abnormal discharge.

As described above, the direct method and the remote method have a complementary relationship in ion sputtering effect and substrate breakdown phenomenon due to abnormal discharge. By properly selecting and combining the direct method and the remote method, the ashing rate can be improved by the ion sputtering effect, and the breakage phenomenon of the substrate due to abnormal discharge can be prevented.

For example, when the direct method and the remote method are combined to remove the ion implanted photoresist layer on the substrate, the ion implanted photoresist layer can be removed more efficiently. The upper region of the ion implanted photoresist layer is composed of a carbon cured layer, and the lower region is formed of an organic material layer. First, the carbon cured layer, which is the upper region, is removed using a direct sputtering effect. At this time, since the upper region is a hardened layer, even if abnormal discharge occurs, the phenomenon of destruction of the substrate does not occur. In addition, since the organic layer, which is a lower region, does not require an ion sputtering effect, the organic layer is removed using a remote method. At this time, since the substrate is located outside the plasma generation region, the substrate breaking phenomenon due to abnormal discharge does not occur.

As described above, by selectively combining the direct processing method and the remote processing plasma processing process using the substrate processing apparatus according to the present invention, the upper region and the lower region of the ion-implanted photoresist layer on the substrate. The area can be removed efficiently.

Referring back to FIG. 1, the cleaning processor 300 cleans and drys the substrate by supplying a chemical liquid and a drying gas onto the plasma-treated substrate W. FIG. The cleaning processing unit 300 includes a chemical liquid supply member 320 for supplying a chemical liquid onto the substrate W and a dry gas supply member 340 for supplying a dry gas onto the substrate W.

The chemical liquid supply member 320 is provided on one side of the substrate support member 100 to process the substrate W using the chemical liquid. The chemical liquid supply member 320 includes a chemical liquid nozzle 322 and a chemical liquid nozzle moving arm 324. The chemical liquid nozzle 322 injects the chemical liquid to the center of the substrate W on the substrate support member 100. The chemical liquid nozzle 322 extends in parallel with the ground from an upper end of the chemical liquid nozzle moving arm 324 to be described later, and the end portion extends inclined downward. The chemical liquid nozzle moving arm 324 is perpendicular to the ground, and the chemical liquid nozzle 322 is connected to an upper end thereof. The chemical liquid nozzle moving unit 326 is connected to the lower end of the chemical liquid nozzle moving arm 324. The chemical liquid nozzle moving unit 326 may elevate or rotate the chemical liquid nozzle moving arm 324. The chemical liquid line 328 is connected to the lower end of the chemical liquid nozzle moving unit 326. On the chemical liquid line 328, a chemical liquid supply source 330 and a valve 332 for adjusting a supply flow rate of the chemical liquid are disposed. The chemical liquid line 328 is connected to the chemical liquid nozzle 322 through the chemical liquid nozzle moving arm 324 and the chemical liquid nozzle moving unit 326.

The gas supply member 340 is provided at one side of the chemical liquid supply member 320 and supplies a dry gas to the substrate W to dry the chemical liquid remaining on the substrate W. The gas supply member 340 includes a drying nozzle 342 and a drying nozzle moving arm 344. The drying nozzle 342 injects a drying gas to the center of the substrate W on the substrate support member 100. The drying nozzle 342 extends in parallel with the ground from the upper end of the drying nozzle moving arm 344, which will be described later, and the end portion extends inclined downward. The drying nozzle moving arm 344 is perpendicular to the ground, and a drying nozzle 342 is connected to the top. The dry nozzle moving part 346 is connected to the lower end of the drying nozzle moving arm 344. The dry nozzle moving unit 346 may lift or rotate the dry nozzle moving arm 344. The dry gas line 348 is connected to the lower end of the drying nozzle moving part 346. On the dry gas line 348, a dry gas supply source 350 and a valve 352 for adjusting a supply flow rate of the dry gas are disposed. The dry gas line 348 is connected to the drying nozzle 342 through the inside of the drying nozzle moving arm 344 and the drying nozzle moving part 346.

On the other hand, a protective container 400 is installed around the substrate support member 100 to prevent the chemicals and the like supplied on the substrate W from scattering to the outside due to the rotation of the substrate W during the process. The protective container 400 has a generally cylindrical shape. Specifically, the protective container 400 has a circular bottom wall 410 and a side wall 420 extending above the bottom wall 410, and an upper end of the side wall 420 is formed to be inclined. The chemical liquid scattered from the substrate W by this structure flows downward through the inner wall of the inclined portion of the upper sidewall 420.

The above description is merely illustrative of the technical idea of the present invention, and those skilled in the art to which the present invention pertains may make various modifications and changes without departing from the essential characteristics of the present invention. Therefore, the embodiments disclosed in the present invention are not intended to limit the technical idea of the present invention but to describe the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. The scope of protection of the present invention should be interpreted by the following claims, and all technical ideas falling within the scope of the present invention should be construed as being included in the scope of the present invention.

As described above, according to the present invention, the substrate can be selectively processed inside or outside the plasma discharge region.

Moreover, according to this invention, the ion-implanted photoresist layer on a board | substrate can be removed efficiently.

Claims (10)

A substrate support member for supporting a substrate; A plasma supply member for supplying plasma to the substrate and having a pair of first and second electrodes serving as a plasma source; A ground line for grounding the substrate support member; A switching unit disposed on the ground line; Substrate processing apparatus comprising a. The method of claim 1, And a power supply having a power supply terminal for supplying power to the first electrode and a ground terminal for grounding the second electrode. And the ground line is connected to the ground terminal of the power supply unit. The method of claim 1, And the ground line is grounded independently of the second electrode. The method of claim 1, And the plasma supply member has a length corresponding to the diameter of the substrate and is disposed parallel to the upper side of the substrate so as to pass through a central axis perpendicular to the substrate processing surface. The method of claim 4, wherein And a first driver to rotate the substrate support member to rotate the substrate while the plasma processing process is performed on the substrate. The method of claim 4, wherein And a second driving part which linearly moves the plasma supply member in a direction perpendicular to the longitudinal direction of the plasma supply member while the plasma processing process is performed on the substrate. In the method of removing the ion implanted photoresist layer on the substrate using a plasma, A substrate having an ion implanted photoresist layer is provided so as to be located in a plasma generating region, and wherein the cured top region of the ion implanted photoresist layer is removed using a plasma. The method of claim 7, wherein And the substrate on which the cured top region has been removed is positioned outside the plasma generating region, and removes the bottom region below the cured top region using plasma. Supplying a plasma onto the substrate placed on the substrate support member to remove the photoresist used for ion implantation on the substrate, and performing the process by grounding the substrate support member upon removal of the cured top region of the photoresist Treatment method. The method of claim 9, When removing the cured top region of the photoresist, the switch provided to the ground line connected to the substrate support member is turned on, the cured top region of the photoresist is removed, and then the bottom region of the photoresist is removed. When the switch is off (Off) substrate processing method, characterized in that.

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