CN207675355U - Miniaturized flat pressure sensor - Google Patents

Abstract

A kind of miniaturized flat pressure sensor provided by the utility model, the one side that sensitive resistance is arranged in semiconductor and the direct electrostatic bonding of cover glass with silicon conductive column, form sensitive chip, sensitive chip is weldingly fixed on pedestal again, thus the pressure sensor integral thickness very little being arranged, sensitive chip part include cover glass and the semiconductor equipped with multiple sensitive resistances, can be made very thin, it is big to solve current existing pressure sensor volume, the problem of thickness thickness；Small due to pressure sensor, thickness is thin, so that pressure sensor is had with type, can be adapted for the installation of different curve；Meanwhile by that by the one side of semiconductor setting sensitive resistance and the direct electrostatic bonding of cover glass with silicon conductive column, the dynamic property of the pressure sensor can be made to improve, ensureing the accuracy for measuring dynamic data.

Description

Miniaturized flat pressure sensor

Technical field

The utility model is related to sensor technical fields, and in particular to a kind of miniaturized flat pressure sensor.

Background technology

Existing pressure sensor mainly uses hickey to install, and needs space to be mounted big, but in air force It learns in research, needs to test model in wind tunnel surface pressing field distribution；Or miniature probe type sensor, such biography Sensor requires longitudinal depth of installation larger, but some models are very thin, can not use the application of punching installation miniature probe sensor Operating mode.Or it is electrostatic sealing-in glassy layer that a kind of flat sensor chip portion, which uses silicon substrate, centre, top layer is glass Or ceramic package layer.The problem is that there is three-decker, more intermediate glassy layers can not ensure to sense this packing forms Device is made very thin, while the glass on upper layer or ceramics and the glass air-tight packaging of middle layer be there is larger technical difficulty, It is not easy to realize encapsulation.Therefore it is requiring pressure sensor very little very thin, needing the directly attachment of very thin pressure sensor or is digging Shallow hole is buried flush and be mounted on model surface in the case of, the prior art cannot be satisfied requirement.

Utility model content

The technical problem to be solved by the present invention is to overcome pressure sensor in the prior art that cannot be made thin Defect.

For this purpose, a kind of miniaturized flat pressure sensor, including：Sensitive chip, shell, cover glass and pedestal, the shell Body tips upside down on above the pedestal, and the sensitive chip and cover glass bonding are integrated, and are arranged in the shell, described One side encapsulation of the cover glass far from the sensitive chip is fixed on pedestal, and the cover glass is equipped with several silicon conductive columns, Silicon conductive column interval is simultaneously disposed through in the cover glass up and down, and the silicon conductive column close to the pedestal is additionally provided with gold Belong to lead, the metal lead wire extends the shell, flexible structure is set as at the top of the shell of the shell.

In order to make the volume smaller of the pressure sensor, and sensitive property is more excellent, is institute as preferred technical solution It states sensitive chip and is etched with trapezoidal recessed sensitive membrane on one side, another side is equipped with the sensitive resistance of several protrusions, the sensitive electrical The one side of resistance is bonded with the cover glass and is integrated

In order to make the volume smaller of the pressure sensor, and sensitive property is more excellent, is institute as preferred technical solution It states sensitive resistance to be arranged in trapezoidal recessed sensitive diaphragm area, the sensitive resistance and the silicon conductive column are electric correspondingly Property connection setting.

In order to make the volume smaller of the pressure sensor, and sensitive property is more excellent, is institute as preferred technical solution The bottom for stating sensitive chip is additionally provided with a circle sealing ring, close by sealing ring formation one between the sensitive chip and cover glass Area is sealed, which is vacuum seal chamber, and the sensitive resistance and silicon conductive column are arranged at the vacuum seal intracavitary.

In order to ensure the service life of the conducting wire, being broken and influencing product quality occur in conducting wire during avoiding use, It is that the pedestal is set as glass structure layer as preferred technical solution, is located at the upper side of the pedestal and is equipped with conducting wire, it is described The metal lead wire of conducting wire and the silicon conductive column is electrically connected correspondingly, and is all covered with glue-line on the conducting wire；It is located at The external circumferential of the sensitive chip and the cover glass also is provided with glue-line.

In order to reduce the damage of conducting wire, the service life of the pressure sensor is improved, as preferred technical solution For the location interval that the pedestal is connect with the shell is equipped with several conductive trench, and the conductive trench extends to pedestal A side edge, and the conducting wire for extending the pedestal is equipped in the conductive trench.

In order to ensure the sensibility higher of the pressure sensor, it is as preferred technical solution, the sensitive chip It is set as pressure drag semiconductor.

In order to make the volume smaller of the pressure sensor, and sensitive property is more excellent, is institute as preferred technical solution The glass structure layer that pedestal is equipped with electrostatic bonding is stated, the glass structure layer is bonded with the cover glass to be integrated.

For the ease of the pressure sensor is fixed on the position for needing to detect, the pressure sensor is avoided to use In the process because of the situation that displacement causes measurement data inaccurate, be as preferred technical solution, the pedestal far from shell one Face interval is equipped with several horn-like protrusions flexible, and liquid storage cavity is equipped in the horn-like protrusion, the horn-like protrusion Center is equipped with one and is open, liquid storage cavity described in the open communication.

For the ease of the pressure sensor is fixed on the position for needing to detect, the pressure sensor is avoided to use In the process because of the situation that displacement causes measurement data inaccurate, it is as preferred technical solution, if being equipped at intervals in the pedestal Bottom surface of the pedestal far from the shell is run through in dry cylindrical chamber, the cylindrical chamber one end, and the bottom surface of the pedestal is additionally provided with One protective film

Technical solutions of the utility model have the following advantages that：

The one side and band of sensitive resistance is arranged in semiconductor by a kind of miniaturized flat pressure sensor provided by the utility model There is the direct electrostatic bonding of the cover glass of silicon conductive column, forms sensitive chip, then sensitive chip is weldingly fixed on pedestal, by Obtained pressure sensor integral thickness very little is arranged in this, and sensitive chip part is comprising cover glass and is equipped with multiple sensitive resistances Semiconductor, can be made very thin, it is big to solve current existing pressure sensor volume, the problem of thickness thickness；Since pressure passes Sensor it is small, thickness is thin, make pressure sensor have with type, can be adapted for the installation of different curve；Meanwhile passing through The one side that sensitive resistance is arranged in semiconductor and the direct electrostatic bonding of cover glass with silicon conductive column can be such that the pressure passes The dynamic property of sensor improves, and ensures the accuracy for measuring dynamic data.

Description of the drawings

It, below will be right in order to illustrate more clearly of specific embodiment of the present invention or technical solution in the prior art Specific implementation mode or attached drawing needed to be used in the description of the prior art are briefly described, it should be apparent that, it is described below In attached drawing be that some embodiments of the utility model are not paying creativeness for those of ordinary skill in the art Under the premise of labour, other drawings may also be obtained based on these drawings.

Fig. 1 is a kind of structural schematic diagram of miniaturized flat pressure sensor provided by the utility model；

Fig. 2 is a kind of sensitive chip structural schematic diagram of miniaturized flat pressure sensor provided by the utility model；

Fig. 3 is a kind of conductive trench schematic diagram of miniaturized flat pressure sensor provided by the utility model；

Fig. 4 is a kind of structural schematic diagram of the horn-like protrusion of miniaturized flat pressure sensor provided by the utility model；

Fig. 5 is a kind of structural schematic diagram of the cylindrical chamber of miniaturized flat pressure sensor provided by the utility model.

Wherein：1- sensitive chips, 2- shells, 3- pedestals, 4- sensitive resistances, 5- silicon conductive columns, 6- conducting wires, 7- glue-lines, 8- Vacuum seal chamber, 9- sensitive membranes, 10- sealing rings, 11- vacuum chambers, 12- conductive trench, 13- cover glass, 14- are horn-like convex It rises, 15- liquid storage cavitys, 16- openings, 17- cylindrical chambers, 18- protective films.

Specific implementation mode

The technical solution of the utility model is clearly and completely described below in conjunction with attached drawing, it is clear that described Embodiment is the utility model a part of the embodiment, instead of all the embodiments.Based on the embodiments of the present invention, originally The every other embodiment that field those of ordinary skill is obtained without making creative work, belongs to this practicality Novel protected range.

It is in the description of the present invention, it should be noted that term "center", "upper", "lower", "left", "right", " perpendicular Directly ", the orientation or positional relationship of the instructions such as "horizontal", "inner", "outside" is to be based on the orientation or positional relationship shown in the drawings, and is only The utility model and simplifying describes for ease of description, do not indicate or imply the indicated device or element must have it is specific Orientation, with specific azimuth configuration and operation, therefore should not be understood as limiting the present invention.In addition, term " the One ", " second ", " third " are used for description purposes only, and are not understood to indicate or imply relative importance.In addition, following institute Involved technical characteristic as long as they do not conflict with each other can phase in the utility model different embodiments of description Mutually combine.

Embodiment 1

According to Fig. 1, Fig. 2 and Fig. 3, a kind of miniaturized flat pressure sensor, including：Sensitive chip 1, shell 2, glass Lid 13 and pedestal 3, the shell 2 tip upside down on 3 top of the pedestal, and the sensitive chip 1 and the bonding of cover glass 13 are one Body, and be arranged in the shell 2, one side encapsulation of the cover glass 13 far from the sensitive chip 1 is fixed on pedestal 3 On, the cover glass 13 is equipped with several silicon conductive columns 5, and the interval of silicon conductive column 5 is simultaneously disposed through the glass up and down On lid 13, the silicon conductive column 5 close to the pedestal 3 is additionally provided with metal lead wire, and the metal lead wire extends the shell 2, It is set as flexible structure at the top of the shell of the shell 2.The sensitive chip 1 is etched with trapezoidal recessed sensitive membrane 9, another side on one side Sensitive resistance 4 equipped with several protrusions, the one side of the sensitive resistance 4 are bonded with the cover glass 13 and are integrated.It is described quick Sensing resistor 4 is arranged in trapezoidal recessed sensitive diaphragm area, the sensitive resistance 4 and the one-to-one electricity of the silicon conductive column 5 Property connection setting.

Semiconductor is arranged to the one side and the 13 direct electrostatic bonding of cover glass with silicon conductive column 5, shape of sensitive resistance 4 It is weldingly fixed on pedestal 3 at sensitive chip 1, then by sensitive chip 1, the pressure sensor integral thickness being thus arranged is very Small, 1 part of sensitive chip includes cover glass 13 and the semiconductor equipped with multiple sensitive resistances, can be made very thin, solve Current existing pressure sensor volume is big, the problem of thickness thickness；Small due to pressure sensor, thickness is thin, and pressure is made to pass Sensor has with type, can be adapted for the installation of different curve；Meanwhile the one side by the way that semiconductor to be arranged to sensitive resistance 4 With the 13 direct electrostatic bonding of cover glass with silicon conductive column 5, the dynamic property of the pressure sensor can be made to improve, ensured Measure the accuracy of dynamic data.

In use, the pressure sensor to be placed on to the position that need to be detected, pedestal 3 is set as bottom, and the top of shell 2 is set Pressing structure is set, after the flexible material of top shell 2 pushes, touches sensitive chip 1, the sensitive membrane 9 at 1 top of sensitive chip Pressure signal is transmitted to sensitive resistance 4, pressure signal is converted to resistance value signal by sensitive resistance 4 again, is transmitted by silicon conductive column 5 To metal lead wire, resistance value signal is transmitted by metal lead wire by conducting wire 6 again.

In order to ensure the service life of the conducting wire 6, being broken and influencing product matter occur in conducting wire 6 during avoiding use Amount, is that according to Fig. 1, the pedestal 3 is set as glass structure layer as preferred technical solution, is located at 3 top of the pedestal Side is equipped with conducting wire 6, and the conducting wire 6 and the metal lead wire of the silicon conductive column 5 are electrically connected correspondingly, and the conducting wire Glue-line 7 is all covered on 6；It also is provided with glue-line 7 positioned at the external circumferential of the sensitive chip 1 and the cover glass 13.Pass through The glue-line 7 of setting, you can ensure to be not easy to disengage between the sensitive chip 1 and cover glass 13, while ensure that the sensitivity The seal of chip 1 and cover glass 13.The glue-line 7 being arranged on conducting wire 6 can avoid conducting wire 6 in use and break The service life of product is reduced after splitting.

In order to make the volume smaller of the pressure sensor, and sensitive property is more excellent, is root as preferred technical solution Shown in Fig. 1 and Fig. 2, the bottom of the sensitive chip 1 is additionally provided with a circle sealing ring 10, the sensitive chip 1 and cover glass A seal area is formed by sealing ring 10 between 13, which is vacuum seal chamber 8, the sensitive resistance 4 and silicon conductive column 5 It is arranged in the vacuum seal chamber 8.

In order to reduce the damage of conducting wire 6, the service life of the pressure sensor is improved, as preferred technical solution For according to Fig.3, the location interval that the pedestal 3 is connect with the shell 2 is equipped with several conductive trench 12, the conduction Groove 12 extends to a side edge of pedestal 3, and the conducting wire 6 for extending the pedestal 3 is equipped in the conductive trench 12.

The sensitive chip 1 is soi wafer, and soi wafer is processed into square structure, and at the top of square structure, setting is quick Feel film 9, the one side far from groove body is equipped with sensitive resistance 4, and the outside for being located at the sensitive resistance 4 is equipped with a circle sealing ring 10, institute 10 inside of sealing ring is stated as in bonding sealing-in area.Silicon conductive column 5 and vacuum are arranged by glass through-hole technology in cover glass 13 Sealing-in chamber 8.So that the silicon conductive column 5 of cover glass 13 is aligned with the close contact of the extraction electrode of sensitive chip 1 when bonding, makes sensitivity The sensitive resistance 4 of chip 1 is drawn out to cover glass 13, is located at 13 outside of cover glass and is equipped with metal lead-outs, metal lead-outs It connect and draws with the conducting wire of the silicon conductive column 5.

By having contact conductor point corresponding with sensitive chip 1 and conductive trench 12 on pedestal 3, drawn by electrode Line point makes sensitive chip 1 draw conductive trench 12 with the conduction of cover glass 13 and is connected, and passes through in the end of conductive trench 12 Conducting wire 6 draws presser sensor signal.

Design is drawn by rational distance structure and electrode, sensitive chip 1 and pedestal 3 are sealed to together, glass is utilized Glass through-hole technology draws the metal lead wire of sensitive resistance 4, you can obtains the pressure sensor.

In order to ensure the sensibility higher of the pressure sensor, it is as preferred technical solution, the sensitive chip 1 It is set as pressure drag semiconductor.

In order to make the volume smaller of the pressure sensor, and sensitive property is more excellent, is institute as preferred technical solution The glass structure layer that pedestal 3 is equipped with electrostatic bonding is stated, the glass structure layer is bonded with the cover glass 13 to be integrated.

The sensitive chip 1 uses SOI materials, and pressure resistance type principle pressure-sensitive, the back side is processed into using KOH corrosive liquids needs depth The sensitive membrane of degree；Front makes sensitive resistance 4 in stress maximum region, and sensitive resistance 4 etches at the oxide layer of SOI materials, The 55 position phase of silicon conductive column completely isolated, the extraction electrode of resistance coordinates with cover glass sealing-in is formed between resistance and resistance It is corresponding, closed bond area is formed around extraction electrode, so that extraction electrode is formed with vacuum-sealed cavity and is isolated, in sensitive membrane Portion is absolute pressure pressure-sensitive chamber, and outermost is the sealing surface of closed loop, ensures that absolute pressure chamber is isolated with ambient pressure formation.

The cover glass 13 is made of silicon conductive column 5 and electrostatic bonding glass, and glass material is that can carry out electrostatic bond The Pyrex of conjunction, such as 7740, BF33 models have silicon conductive column with the extraction electrode corresponding position of pressure chip resistance 5, which is higher by with pressure chip bonding face at a distance from glass surface≤1 micron, and glass bonding face, which is processed into, meets key Desired burnishing surface is closed, the silicon column in nonbonding face is flushed with glass surface.The corresponding positions in nonbonding face are equipped with titanium, layer gold, and being used for will Sensitive resistance is drawn out in glass or ceramic substrate, and titanium, layer gold are formed using the method for sputtering, then uses the method for photoetching will It gets rid of unwanted part.

The sensitive chip 1 carries out sealing-in with cover glass 13 using Wafer level bonding mode.In sensitive chip 1 and glass The corresponding position of lid 13 makes alignment mark, on litho machine using bonding fixture by sensitive chip 1 and cover glass 13 into Row precisely aligns.Sensitive chip 1 to be bonded after alignment is used into standard bonding conditions with cover glass 13 on bonder Carry out electrostatic bonding.

The bottom of the pedestal 3 uses vitreous insulating material, and one layer of crome metal is deposited first on glass, uses photoetching Method carries out selective removal and retains to crome metal, makes to need the chromium of etched portions to remove, rest part chromium retains, and uses layers of chrome It is protected, the method processing hole of wet etching and conductive trench 12, the HF that corrosive liquid is 49%, corrosion depth is to meet conducting wire It draws and requires, then evaporation or sputtered titanium and platinum in entire glass surface again, made in conductive trench 12 using the method for photoetching Titanium and platinum leave, and as conductive layer, rest part peels off for titanium and platinum.

The sensitive chip 1 and the encapsulation of pedestal 3 carry out sealing-in using wafer level mode.In sensitive chip 1 and pedestal 3 Corresponding position makes eutectic and welds alignment mark, and make 13 part of cover glass in sensitive chip 1 carries 5 face of silicon conductive column and pedestal 3 with metal lead wire are electrically connected sealing-in.Pedestal 3 needs and silicon conductive column 5 is electrically connected the upper AuSn of part making and is total to Brilliant solder makes sensitive chip 1 be sealed with pedestal 3 using reflow soldering process, carries out flux-free under vacuum conditions AuSn eutectic reflow solderings, vacuum back-flow weld the voidage that can also substantially reduce welding, improve welding quality.AuSn solders 280 DEG C of fusing point, about 300 DEG C -310 DEG C of brazing temperature.

Each unit is detached after the completion of sealing-in.Separation is carried out using sand-wheel slice cutting machine.To each list after separation Member is drawn in the end of pedestal 3 into line lead.It draws and conventional welding manner progress may be used.It completes after welding in whole table Face coats one layer of insulation protection glue and is reinforced.Becket and impulse lid can be made to entire sensitive chip in the periphery of chip 1 is protected.

For the ease of the pressure sensor is fixed on the position for needing to detect, the pressure sensor is avoided to use In the process because of the situation that displacement causes measurement data inaccurate, it is as preferred technical solution, according to Fig.4, the pedestal 3 Being equipped at intervals on one side in several flexible horn-like raised 14, described horn-like raised 14 far from shell 2 is equipped with liquid storage cavity 15, horn-like raised 14 center is equipped with an opening 16, and the opening 16 is connected to the liquid storage cavity 15.The storage Water can be stored in sap cavity body 15, can also store liquid glue, be set as flexible because of described horn-like raised 14, therefore the liquid storage The a small amount of liquid of storage does not squeeze in cavity 15, will not flow out, when the pressure sensor makes for fixation on smooth stationary plane Used time, the injection water in liquid storage cavity 15, then described horn-like raised 14 are placed on need fixed position, with forcing the base Seat, described under pressure horn-like raised 14 are flattened by horn-like, are fixed on smooth stationary plane by the way that water is adsorbable. When the pressure sensor needs to be arranged in rough stationary plane, glue can be set in liquid storage cavity 15, push pedestal 3 When, glue squeezes out liquid storage cavity 15, you can is firmly pasted onto on rough stationary plane.

For the ease of the pressure sensor is fixed on the position for needing to detect, the pressure sensor is avoided to use In the process because of the situation that displacement causes measurement data inaccurate, it is as preferred technical solution, according to Fig.5, the pedestal 3 Several cylindrical chambers 17 are inside equipped at intervals with, which runs through bottom surface of the pedestal 3 far from the shell 2, institute The bottom surface for stating pedestal 3 is additionally provided with a protective film 18.Liquid glue is equipped in the cylindrical chamber 17, in use, tearing shown guarantor Cuticula 18, the liquid glue in the cylindrical chamber 17 can flow out, and be pasted onto the pedestal 3 need fixed position at this time .

Obviously, the above embodiments are merely examples for clarifying the description, and does not limit the embodiments.It is right For those of ordinary skill in the art, can also make on the basis of the above description it is other it is various forms of variation or It changes.There is no necessity and possibility to exhaust all the enbodiments.And it is extended from this it is obvious variation or Among the protection domain that variation is created still in the utility model.

Claims (10)

1. a kind of miniaturized flat pressure sensor, which is characterized in that including：Sensitive chip (1), shell (2), cover glass (13) With pedestal (3), the shell (2) tips upside down on above the pedestal (3), the sensitive chip (1) and cover glass (13) bonding It is integrated, and is arranged in the shell (2), one side encapsulation of the cover glass (13) far from the sensitive chip (1) is solid It is scheduled on pedestal (3), the cover glass (13) is equipped with several silicon conductive columns (5), and silicon conductive column (5) interval is simultaneously passed through up and down It wears and is placed in the cover glass (13), the silicon conductive column (5) close to the pedestal (3) is additionally provided with metal lead wire, the gold Belong to lead and extend the shell (2), flexible structure is set as at the top of the shell of the shell (2).

2. a kind of miniaturized flat pressure sensor according to claim 1, which is characterized in that the sensitive chip (1) one Facet etch has trapezoidal recessed sensitive membrane (9), another side to be equipped with the sensitive resistance (4) of several protrusions, the sensitive resistance (4) It is bonded and is integrated with the cover glass (13) on one side.

3. a kind of miniaturized flat pressure sensor according to claim 2, which is characterized in that the sensitive resistance (4) sets It sets in trapezoidal recessed sensitive diaphragm area, the sensitive resistance (4) is electrically connected correspondingly with the silicon conductive column (5) Setting.

4. a kind of miniaturized flat pressure sensor according to claim 1, which is characterized in that the pedestal (3) is set as glass Glass structure sheaf is located at the upper side of the pedestal (3) and is equipped with conducting wire (6), the gold of the conducting wire (6) and the silicon conductive column (5) Belong to lead to be electrically connected correspondingly, and is all covered with glue-line (7) on the conducting wire (6)；Positioned at the sensitive chip (1) and The external circumferential of the cover glass (13) also is provided with glue-line (7).

5. a kind of miniaturized flat pressure sensor according to claim 2, which is characterized in that the sensitive chip (1) Bottom is additionally provided with a circle sealing ring (10), is formed by sealing ring (10) between the sensitive chip (1) and cover glass (13) One seal area, the seal area are vacuum seal chamber (8), and the sensitive resistance (4) and silicon conductive column (5) are arranged at the vacuum In sealing-in chamber (8).

6. a kind of miniaturized flat pressure sensor according to claim 1, which is characterized in that the pedestal (3) with it is described The location interval of shell (2) connection is equipped with several conductive trench (12), and the conductive trench (12) extends to the side of pedestal (3) Edge, and the conducting wire (6) for extending the pedestal (3) is equipped in the conductive trench (12).

7. a kind of miniaturized flat pressure sensor according to claim 1, which is characterized in that the sensitive chip (1) sets For pressure drag semiconductor.

8. a kind of miniaturized flat pressure sensor according to claim 1, which is characterized in that the pedestal (3) is equipped with quiet The glass structure layer that telegraph key closes, the glass structure layer are bonded with the cover glass (13) and are integrated.

9. a kind of miniaturized flat pressure sensor according to claim 1, which is characterized in that the pedestal (3) is far from shell Being equipped at intervals on one side several horn-like raised (14) flexible for body (2), liquid storage cavity is equipped in horn-like raised (14) (15), the center of horn-like raised (14) is equipped with an opening (16), and the opening (16) is connected to the liquid storage cavity (15)。

10. a kind of miniaturized flat pressure sensor according to claim 1, which is characterized in that interval in the pedestal (3) Equipped with several cylindrical chambers (17), which runs through bottom surface of the pedestal (3) far from the shell (2), The bottom surface of the pedestal (3) is additionally provided with a protective film (18).