CN207571423U - 显示面板 - Google Patents
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- CN207571423U CN207571423U CN201721085208.3U CN201721085208U CN207571423U CN 207571423 U CN207571423 U CN 207571423U CN 201721085208 U CN201721085208 U CN 201721085208U CN 207571423 U CN207571423 U CN 207571423U
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- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136204—Arrangements to prevent high voltage or static electricity failures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
Abstract
本申请提供一种显示面板,显示面板包括:阵列基板,具有一外表面;彩膜基板,与所述阵列基板相对设置;以及防静电薄膜,设置于所述阵列基板的外表面;其中,所述防静电薄膜涵盖所述阵列基板的外表面。
Description
技术领域
本申请涉及显示领域,特别是涉及一种具有防静电薄膜的显示面板。
背景技术
随着信息技术的发展,显示面板及显示装置作为信息呈现的重要载体,愈发受到各领域厂商的重视。但同时地,也对显示面板及显示装置提出了更高的要求。其中,部分产品由于灵敏度高,因而对抗静电的要求特别高。
TFT-LCD(主动开关液晶显示装置,Thin Film Transistor-Liquid CrystalDisplay)作为显示装置的一种,因其具有良好的色彩特性,以及轻便等特点,而被广泛应用。在TFT-LCD的生产和制造过程中,会在阵列基板中镀上作用不同的膜层,而不同的膜层在不同的机械设备和反应室中完成,在镀膜和基板搬运的过程中,难以避免地会产生大量的静电荷,该些静电荷堆积于阵列基板上,当与传送设备接触时,会形成较大的电势差,进而将接触点附近的膜层击穿,严重影响显示面板或显示装置的质量。
实用新型内容
为了解决上述技术问题,本申请的目的在于,提供一种显示面板,其通过在阵列基板上设置防静电薄膜,可以在面板制程中将与机台接触所产生的静电进行分散和导出,另外可以防止面板在搬运过程中存在的划伤可能,提高产品质量和产品良率。
本申请的目的及解决其技术问题是采用以下技术方案来实现的。本申请的目的为一种显示面板,包括:阵列基板,具有一外表面;彩膜基板,与所述阵列基板相对设置;以及防静电薄膜,设置于所述阵列基板的外表面,其中,所述防静电薄膜为绝缘薄膜或导电薄膜;其中,所述防静电薄膜涵盖所述阵列基板的外表面。
在本申请的一实施例中,所述防静电薄膜由所述阵列基板的外表面延伸,其中,所述阵列基板的侧缘至少有一侧覆盖有所述防静电薄膜。
在本申请的一实施例中,所述防静电薄膜由所述阵列基板的外表面延伸且贴附于所述阵列基板的侧缘。
在本申请的一实施例中,所述防静电薄膜由所述阵列基板的外表面延伸,并涵盖所述阵列基板的侧缘。
在本申请的一实施例中,所述防静电薄膜为绝缘薄膜。
在本申请的一实施例中,所述防静电薄膜为导电薄膜。
在本申请的一实施例中,所述导电薄膜做接地设置。
本申请通过在阵列基板上设置防静电薄膜,可以在面板制程中将与机台接触所产生的静电进行分散和导出,另外可以防止面板在搬运过程中存在的划伤可能,提高产品质量和产品良率。
附图说明
图1为范例性的显示面板示意图。
图2为本申请一实施例的显示面板制程步骤示意图。
图3为本申请一实施例的显示面板示意图。
图4为本申请再一实施例的显示面板示意图。
图5为本申请又一实施例的显示面板示意图。
图6为本申请另一实施例的显示面板示意图。
具体实施方式
以下各实施例的说明是参考附加的图式,用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语,例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等,仅是参考附加图式的方向。因此,使用的方向用语是用以说明及理解本申请,而非用以限制本申请。
附图和说明被认为在本质上是示出性的,而不是限制性的。在图中,结构相似的单元是以相同标号表示。另外,为了理解和便于描述,附图中示出的每个组件的尺寸和厚度是任意示出的,但是本申请不限于此。
在附图中,为了清晰起见,夸大了层、膜、面板、区域等的厚度。在附图中,为了理解和便于描述,夸大了一些层和区域的厚度。将理解的是,当例如层、膜、区域或基底的组件被称作“在”另一组件“上”时,所述组件可以直接在所述另一组件上,或者也可以存在中间组件。
另外,在说明书中,除非明确地描述为相反的,否则词语“包括”将被理解为意指包括所述组件,但是不排除任何其它组件。此外,在说明书中,“在......上”意指位于目标组件 上方或者下方,而不意指必须位于基于重力方向的顶部上。
为更进一步阐述本申请为达成预定发明创造的目的所采取的技术手段及功效,以下结合附图及具体实施例,对依据本申请提出的一种显示面板,其具体实施方式、结构、特征及其功效,详细说明如后。
图1为范例性的显示面板示意图。请参考图1,一种范例性的显示面板10,包括:阵列基板110;彩膜基板120,与所述阵列基板110相对设置。其中,所述阵列基板110上设置有多个膜层,例如为,栅极层,栅极绝缘层,漏极层,源极层等,不同的膜层因为所需原材料,温度及pH值等要求,而在不同的反应室完成。阵列基板110和彩膜基板120通往不同的反应室则通过传送带及机械臂等传输设备完成,在此过程中,基板与设备间的接触,于接触点附近的基板会积累大量的静电荷,而静电荷的积累会使得接触点与基板上的膜层形成电势差。当电势差达到一个临界值/阈值时,会将接触点附近的膜层击穿,对基板造成不可修复的损伤,降低产品的质量,影响产品良度和成品率。
图2为本申请一实施例的显示面板制程步骤示意图,图3为本申请一实施例的显示面板示意图。请同时参考图2和图3,在本申请的一实施例中,一种显示面板的制造方法,其包括以下步骤:
步骤S101:提供阵列基板。
步骤S102:设置防静电薄膜;设置防静电薄膜于所述阵列基板的外表面。其中,所述防静电薄膜涵盖所述阵列基板的外表面。
步骤S103:阵列基板镀膜;在阵列基板的另一表面镀上显示面板所需的各膜层、部件,如主动开关,像素电极层等。
步骤S104:提供彩膜基板。
步骤S105:彩膜基板镀膜;在彩膜基板的表面镀上如黑色矩阵,公共电极层等膜层部件。
步骤S106:贴合阵列基板及彩膜基板,以形成一显示面板。
步骤S107:剥离防静电薄膜。
步骤S108:裁切显示面板;将此显示面板裁切成所需的规格。
在本申请的一实施例中,所述防静电薄膜为绝缘薄膜或导电薄膜,并可以通过薄膜片直接贴附,或物理气相沉积或化学气相沉积的方式设置于所述阵列基板的外表面。
在本申请的一实施例中,所述防静电薄膜为玻璃或聚对苯二甲酸乙二醇酯材质的绝缘薄膜,用以隔绝静电荷堆积的可能。
在本申请的一实施例中,所述防静电薄膜为铟、锡、锌及其化合物所组成的薄膜。如氧化铟锡(ITO),氧化铟锌(IZO)或铝掺杂氧化锌(AZO)等的导电薄膜,所述导电薄膜做接地设置,可以及时导出静电荷,防止形成较大的电势差,进而预防膜层击穿。
在本申请的一实施例中,所述防静电薄膜为铝、硅及其氧化物所组成的致密绝缘薄膜或钝化薄膜。
在本申请的一实施例中,所述防静电薄膜的剥离可以直接撕开(若为薄膜片贴附),或通过化学试剂冲洗去除(若为物理气相沉积或化学气相沉积)。
图3为本申请一实施例的显示面板示意图。请参考图3,在本申请的一实施例中,一种通过上述实施例制造的显示面板20,包括:阵列基板110,具有一外表面,彩膜基板120,与所述阵列基板110相对设置。以及防静电薄膜130,设置于所述阵列基板110的外表面,其中,所述防静电薄膜130为绝缘薄膜或导电薄膜;其中,所述防静电薄膜130涵盖所述阵列基板110的外表面。
在本申请的一实施例中,所述阵列基板110的外表面远离所述彩膜基板120。
在本申请的一实施例中,所述防静电薄膜130可以通过薄膜片直接贴附或物理气相沉积或化学气相沉积的方式设置于所述阵列基板110的外表面。
在本申请的一实施例中,所述防静电薄膜130为玻璃或聚对苯二甲酸乙二醇酯材质的绝缘薄膜,用以隔绝静电荷堆积的可能。
在本申请的一实施例中,所述防静电薄膜130为铟、锡、锌及其化合物所组成的薄膜。如氧化铟锡(ITO),氧化铟锌(IZO)或铝掺杂氧化锌(AZO)等的导电薄膜,其中,所述导电薄膜130做接地设置,可以及时导出静电荷,防止形成较大的电势差,进而预防膜层击穿。
在本申请的一实施例中,所述防静电薄膜130为铝、硅及其氧化物所组成的致密绝缘薄膜或钝化薄膜。
图4为本申请再一实施例的显示面板示意图。请参考图4,在本申请的一实施例中,一种显示面板30,与显示面板20相比,包括:一防静电薄膜130,所述防静电薄膜130涵盖所述阵列基板110的外表面,并向所述阵列基板110的侧缘延伸。其中,所述阵列基板110的侧缘至少有一侧覆盖有所述防静电薄膜130。
图5为本申请又一实施例的显示面板示意图。请参考图5,在本申请的一实施例中,一种显示面板40,与显示面板(20,30)相比,包括:一防静电薄膜130,所述防静电薄膜130涵盖所述阵列基板110的外表面,并向所述阵列基板110的侧缘延伸。其中,所述防静电薄膜130延伸且贴附于所述阵列基板110的侧缘。
图6为本申请另一实施例的显示面板示意图。请参考图6,在本申请的一实施例中,一种显示面板50,与显示面板(20,30,40)相比,包括:一防静电薄膜130,所述防静电薄膜130涵盖所述阵列基板110的外表面,并向所述阵列基板110的侧缘延伸。其中,所述防静电薄膜130向所述阵列基板110的侧缘延伸,涵盖并贴附所述阵列基板110的侧缘。
在一些实施例中,所述防静电薄膜130设置于阵列基板110的外表面,在运输过程中,所述防静电薄膜130与搬运设备接触,亦可以降低甚至消除搬运过程中阵列基板110的划伤可能,提高制程良率。
在一些实施例中,所述防静电薄膜130亦可以设置于彩膜基板120的外表面,同样可以起到防静电及防划伤的可能。
在一些实施例中,当所述阵列基板110及所述彩膜基板120贴合后形成显示面板,即完成前制程后,剥离所述防静电薄膜130。
请再参考图3至图6,在一些实施例中,所述阵列基板110及所述彩膜基板120贴合后的显示面板可例如为TN(扭曲向列,Twisted Nematic)、STN(超扭曲向列,Super TwistedNematic)、OCB(光学补偿弯曲排列,Optically Compensated Birefringence)等类型的液晶显示面板,然不限于此。此防静电薄膜130亦可以用于如OLED(有机发光二极管,OrganicLight Emitting Diode)显示面板、QLED显示面板、曲面显示面板及等离子体显示面板。
本申请通过在阵列基板110上设置防静电薄膜130,可以在基板及面板制程中将其与搬运机台接触所产生的静电进行分散和导出,另外防静电薄膜130可以防止基板及面板在搬运过程中存在的划伤可能,提高产品质量和产品良率。
“在一些实施例中”及“在各种实施例中”等用语被重复地使用。所述用语通常不是指相同的实施例;但它也可以是指相同的实施例。“包含”、“具有”及“包括”等用词是同义词,除非其前后文意显示出其它意思。
以上所述,仅是本申请的实施例,并非对本申请作任何形式上的限制,虽然本申请已以具体的实施例揭露如上,然而并非用以限定本申请,任何熟悉本专业的技术人员,在不脱离本申请技术方案范围内,当可利用上述揭示的技术内容作出些许更动或修饰为等同变化的等效实施例,但凡是未脱离本申请技术方案的内容,依据本申请的技术实质对以上实施例所作的任何简单修改、等同变化与修饰,均仍属于本申请技术方案的范围内。
Claims (7)
1.一种显示面板,其特征在于,包括:
阵列基板,具有一外表面;
彩膜基板,与所述阵列基板相对设置;以及
防静电薄膜,设置于所述阵列基板的外表面;
其中,所述防静电薄膜涵盖所述阵列基板的外表面。
2.如权利要求1所述的显示面板,其特征在于,所述防静电薄膜由所述阵列基板的外表面延伸,其中,所述阵列基板的侧缘至少有一侧覆盖有所述防静电薄膜。
3.如权利要求2所述的显示面板,其特征在于,所述防静电薄膜由所述阵列基板的外表面延伸且贴附于所述阵列基板的侧缘。
4.如权利要求1所述的显示面板,其特征在于,所述防静电薄膜由所述阵列基板的外表面延伸,并涵盖所述阵列基板的侧缘。
5.如权利要求1所述的显示面板,其特征在于,所述防静电薄膜为绝缘薄膜。
6.如权利要求1所述的显示面板,其特征在于,所述防静电薄膜为导电薄膜。
7.如权利要求6所述的显示面板,其特征在于,所述导电薄膜做接地设置。
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PCT/CN2017/117338 WO2019041665A1 (zh) | 2017-08-28 | 2017-12-20 | 显示面板 |
US16/328,952 US20200012160A1 (en) | 2017-08-28 | 2017-12-20 | Display panel |
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GB2335884A (en) * | 1998-04-02 | 1999-10-06 | Cambridge Display Tech Ltd | Flexible substrates for electronic or optoelectronic devices |
JP2001111076A (ja) * | 1999-10-08 | 2001-04-20 | Tdk Corp | コーティング体および太陽電池モジュール |
KR101340052B1 (ko) * | 2007-08-24 | 2013-12-11 | 삼성디스플레이 주식회사 | 액정 표시 패널 및 이의 제조 방법 |
US9201259B2 (en) * | 2010-03-19 | 2015-12-01 | Lg Display Co., Ltd. | Touch sensing type liquid crystal display device and method of fabricating the same |
CN104536184A (zh) * | 2014-12-25 | 2015-04-22 | 上海天马微电子有限公司 | 一种显示面板及显示装置 |
CN204807871U (zh) * | 2015-05-08 | 2015-11-25 | 上海天马微电子有限公司 | 显示面板及显示装置 |
CN104880869A (zh) * | 2015-06-19 | 2015-09-02 | 京东方科技集团股份有限公司 | 显示面板及其制作方法、显示装置 |
CN205539836U (zh) * | 2016-03-16 | 2016-08-31 | 天马微电子股份有限公司 | 一种触控显示面板及触控显示装置 |
CN107367861A (zh) * | 2017-08-28 | 2017-11-21 | 惠科股份有限公司 | 显示面板及其制造方法 |
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