CN207483904U - Suitable for the thermal field structure of G8 high-efficiency polycrystalline ingot castings - Google Patents

Suitable for the thermal field structure of G8 high-efficiency polycrystalline ingot castings Download PDF

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Publication number
CN207483904U
CN207483904U CN201721555587.8U CN201721555587U CN207483904U CN 207483904 U CN207483904 U CN 207483904U CN 201721555587 U CN201721555587 U CN 201721555587U CN 207483904 U CN207483904 U CN 207483904U
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carbon
crucible
panel system
thermal field
field structure
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CN201721555587.8U
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周硕
路景刚
陈松松
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Jiangsu Meike Solar Technology Co Ltd
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Jiangsu High New Energy Developments Ltd
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Abstract

The utility model discloses a kind of thermal field structures suitable for G8 high-efficiency polycrystalline ingot castings, it is related to polycrystalline cast ingot field, including heater, heat-insulation system, crucible and protecting panel system and oriented solidified blocks, crucible and protecting panel system, heater, oriented solidified blocks are set in heat-insulation system, heater is set around crucible and protecting panel system, oriented solidified blocks are set on crucible and protecting panel system bottom, crucible and protecting panel system include the isostatic pressing formed graphite backplate positioned at side, isostatic pressing formed graphite backplate is equipped with the insulation quilt that thermal conductivity factor is less than 0.25w/mK, oriented solidified blocks side is equipped with carbon felt.The thermal field structure can solve the problems, such as that G8 silicon ingots crystal growth interface in micro- " w " shape, improves crystal quality.

Description

Suitable for the thermal field structure of G8 high-efficiency polycrystalline ingot castings
Technical field
The utility model is related to polycrystalline cast ingot field, more particularly to a kind of thermal field knot suitable for G8 high-efficiency polycrystalline ingot castings Structure.
Background technology
It is higher and higher and for the lower and lower demand of silicon chip cost requirement for silicon chip transfer efficiency based on market, G8 directional solidification ingot furnaces are done something for the occasion and are given birth to.At present, domestic mainstream ingot furnace uses five faces or six face heaters, during ingot casting with The broken small silicon material shop fixtures of polycrystalline, seed crystal induced growth method generate a large amount of crystal boundaries to reach elimination portion in initial crystal growth phase Partial dislocation achievees the purpose that inhibition defect, and silicon chip photoelectric conversion efficiency obtains on the basis of silicon chip manufacture cost increases less It is obviously improved, by original 17.5% or so has been substantially improved 18.6% or so, promote photovoltaic industry par power generation target The process of realization;But for G8 stoves, due to the limitation of polycrystalline furnace inner space and ingot casting radial dimension is big compared with universal G6 stoves 320mm, and crystal ingot surrounding heat insulation effect is worse than other positions, leads to radially have the temperature difference, center and ambient temperature are slightly lower, grow boundary Face Cheng Wei " w " shape causes in corner crystalline substance brick growth course using crucible wall as nucleation point, and it is oblique that autonomous growth goes out large scale Crystalline substance is unfavorable for the growth of high quality crystal ingot, therefore how to ensure that the flat orientation of polycrystal silicon ingot growth interface is grown straight up Become a great problem that technical staff is faced.
Utility model content
The utility model is directed to above-mentioned technical problem, the shortcomings that overcoming the prior art, provides that a kind of to be suitable for G8 efficiently more The thermal field structure of brilliant ingot casting solves the problems, such as that G8 silicon ingots crystal growth interface in micro- " w " shape, improves crystal quality.
In order to solve the above technical problems, the utility model provides a kind of thermal field knot suitable for G8 high-efficiency polycrystalline ingot castings Structure, including heater, heat-insulation system, crucible and protecting panel system and oriented solidified blocks, crucible and protecting panel system, heater, orientation Coagulated mass is set in heat-insulation system, and heater is set around crucible and protecting panel system, and oriented solidified blocks are set on crucible and backplate System bottom, crucible and protecting panel system include the isostatic pressing formed graphite backplate positioned at side, and isostatic pressing formed graphite backplate is equipped with heat conduction Coefficient is less than the insulation quilt of 0.25w/mK, and oriented solidified blocks side is equipped with carbon felt.
Technique effect:The utility model designs the combination of insulation quilt+carbon felt, and heater equity can be stopped in the material stage The baking of static pressure graphite protective plate side lower part, at the end of material, whole seed crystal remaining thickness is consistent, ensure that polycrystalline induced growth The implementation of method, flatness is preferable, is also beneficial to initially long brilliant quality;The bottom thermal insulation board of insulation quilt+carbon felt+heat-insulation system Combination can solve the problems, such as that G8 silicon ingots crystal growth interface in micro- " w " shape, improves crystal quality.
The technical solution that the utility model further limits is:
Further, the length of insulation quilt is more than the length of isostatic pressing formed graphite backplate, and width may extend to isostatic pressed stone Below black backplate.
The preceding thermal field structure suitable for G8 high-efficiency polycrystalline ingot castings, the both ends of carbon felt are located at the brilliant brick position in corner two Place is equipped with carbon felt and lengthens block, and it is consistent with insulation quilt length that carbon felt and carbon felt lengthen block entire length.
The preceding thermal field structure suitable for G8 high-efficiency polycrystalline ingot castings, is equipped between oriented solidified blocks and carbon felt for solid Both fixed carbon carbon bolt and nut.
The preceding thermal field structure suitable for G8 high-efficiency polycrystalline ingot castings, oriented solidified blocks bottom are equipped with carbon carbon composite Plate.
It is low to be lined with thermal conductivity factor in carbon carbon composite plate for the preceding thermal field structure suitable for G8 high-efficiency polycrystalline ingot castings In the soft felt of 0.1w/mK.
The beneficial effects of the utility model are:
(1)The insulation quilt thermal conductivity of the utility model is relatively low, can stop heat radiation, ensures the integrity degree of seed crystal;
(2)The carbon felt of the utility model lengthens block and can be used according to silicon ingot growing state, matches insulation quilt, to reduce herein Heat dissipation channel compensates interior long interface herein;
(3)The carbon carbon composite plate of the utility model and the soft felt of low thermal conductivity advantageously reduce heat dissipation, compensate it Convex interface.
Description of the drawings
Fig. 1 is the thermal field structure schematic diagram of the present embodiment;
Fig. 2 is the carbon carbon composite plate schematic diagram of oriented solidified blocks bottom;
Wherein:1st, heater;2nd, heat-insulation system;3rd, crucible and protecting panel system;301st, isostatic pressing formed graphite backplate;4th, orientation is solidifying Gu block;5th, insulation quilt;6th, carbon felt;7th, carbon felt lengthens block;8th, carbon carbon composite plate.
Specific embodiment
A kind of thermal field structure suitable for G8 high-efficiency polycrystalline ingot castings provided in this embodiment, structure is as shown in Figs. 1-2.
The thermal field structure includes heater 1, heat-insulation system 2, crucible and protecting panel system 3 and oriented solidified blocks 4.Crucible and shield Plate system 3, heater 1, oriented solidified blocks 4 are set in heat-insulation system 2, and heater 1 is set around crucible and protecting panel system 3, Oriented solidified blocks 4 are set on 3 bottom of crucible and protecting panel system.The isostatic pressing formed graphite that crucible and protecting panel system 3 include positioned at side protects Plate 301, isostatic pressing formed graphite backplate 301 are equipped with the insulation quilt 5 that thermal conductivity factor is less than 0.25w/mK, and the length of insulation quilt 5 is big In the length of isostatic pressing formed graphite backplate 301, width may extend to 301 lower section of isostatic pressing formed graphite backplate.
4 side of oriented solidified blocks is equipped with through the fixed carbon felt 6 of carbon carbon bolt and nut, and the both ends of carbon felt 6 are located at corner two Carbon felt is equipped at a crystalline substance brick position and lengthens block 7, it is consistent with 5 length of insulation quilt that carbon felt 6 and carbon felt lengthen 7 entire length of block.Orientation 4 bottom of coagulated mass is equipped with carbon carbon composite plate 8.It is soft less than 0.1w/mK that thermal conductivity factor is lined in carbon carbon composite plate 8 Felt.
Mainstream directional solidification ingot furnace uses five faces or six face heating systems, polycrystalline silicon raw material in the material stage be from upper and Under, from the process of the inside material in side, and the efficient casting ingot method of seed crystal inductive formation small grains needs to ensure crucible bottom and shield The thick broken polycrystalline of 2cm that plate system bottom is paved with is not changed during material, and the thermal field structure after G8 optimizations is in isostatic pressing formed graphite The insulation quilt 5 of the low hard felt of thermal conductivity or soft felt work is secured outside backplate 301, heat radiation is blocked, ensure that the complete of seed crystal Whole degree.The size of insulation quilt 5 can extend to 301 lower section of isostatic pressing formed graphite backplate according to crystal growth condition.
Mainstream directional solidification ingot furnace realizes directional solidification, but corner using the method that lifting heat-insulation cage provides heat dissipation channel The characteristics of heat-insulating property deficiency and this thermal field structure, causes corner dissipated heat more, crystal corner in growth course Temperature can be slightly lower than the temperature of other positions, cause in corner crystalline substance brick growth course with crucible and the side wall of protecting panel system 3 For nucleation point, autonomous growth goes out the oblique crystalline substance of large scale, and quality is not high.It is fixed in 4 side of oriented solidified blocks with carbon carbon bolt and nut Carbon felt 6, can be according to silicon ingot growing state, and setting carbon felt 6 lengthens block at the brilliant brick position in corner two, to match insulation quilt 5, subtracts Small heat dissipation channel herein compensates interior long interface herein.
Since G8 radial dimensions are excessive, farthest from heater 1, temperature can be slightly lower, and germ nucleus some growth interface can be micro- It is more convex.Carbon carbon composite plate 8 is fixed in 4 bottom of oriented solidified blocks, can low heat conduction be padded according to silicon ingot growing state wherein The soft felt of coefficient reduces heat dissipation, compensates its convex interface.
In addition to the implementation, the utility model can also have other embodiment;It is all to use equivalent replacement or equivalent change The technical solution to be formed is changed, all falls within the protection domain of the requires of the utility model.

Claims (6)

1. a kind of thermal field structure suitable for G8 high-efficiency polycrystalline ingot castings, it is characterised in that:Including heater(1), heat-insulation system (2), crucible and protecting panel system(3)And oriented solidified blocks(4), the crucible and protecting panel system(3), heater(1), directional solidification Block(4)It is set on the heat-insulation system(2)It is interior, the heater(1)Around the crucible and protecting panel system(3)Setting, it is described Oriented solidified blocks(4)Set on the crucible and protecting panel system(3)Bottom, the crucible and protecting panel system(3)Including being located at side Isostatic pressing formed graphite backplate(301), the isostatic pressing formed graphite backplate(301)It is equipped with the guarantor that thermal conductivity factor is less than 0.25w/mK Warm felt(5), the oriented solidified blocks(4)Side is equipped with carbon felt(6).
2. the thermal field structure according to claim 1 suitable for G8 high-efficiency polycrystalline ingot castings, it is characterised in that:The insulation quilt (5)Length be more than the isostatic pressing formed graphite backplate(301)Length, width may extend to the isostatic pressing formed graphite backplate (301)Lower section.
3. the thermal field structure according to claim 1 suitable for G8 high-efficiency polycrystalline ingot castings, it is characterised in that:The carbon felt (6)Both ends be located at and be equipped with carbon felt at the brilliant brick position in corner two and lengthen block(7), the carbon felt(6)Block is lengthened with carbon felt(7)It is whole Body length and the insulation quilt(5)Length is consistent.
4. the thermal field structure according to claim 1 suitable for G8 high-efficiency polycrystalline ingot castings, it is characterised in that:The orientation is solidifying Gu block(4)With the carbon felt(6)Between be equipped with for both fixed carbon carbon bolt and nut.
5. the thermal field structure according to claim 1 suitable for G8 high-efficiency polycrystalline ingot castings, it is characterised in that:The orientation is solidifying Gu block(4)Bottom is equipped with carbon carbon composite plate(8).
6. the thermal field structure according to claim 5 suitable for G8 high-efficiency polycrystalline ingot castings, it is characterised in that:The carbon carbon is answered Condensation material plate(8)In be lined with thermal conductivity factor be less than 0.1w/mK soft felt.
CN201721555587.8U 2017-11-20 2017-11-20 Suitable for the thermal field structure of G8 high-efficiency polycrystalline ingot castings Active CN207483904U (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107699947A (en) * 2017-11-20 2018-02-16 江苏高照新能源发展有限公司 A kind of thermal field structure suitable for G8 high-efficiency polycrystalline ingot castings

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107699947A (en) * 2017-11-20 2018-02-16 江苏高照新能源发展有限公司 A kind of thermal field structure suitable for G8 high-efficiency polycrystalline ingot castings

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Address after: No.198 Guangming Road, Yangzhong Economic Development Zone, Zhenjiang City, Jiangsu Province

Patentee after: Jiangsu Meike Solar Energy Technology Co.,Ltd.

Address before: 968 GANGLONG Road, Yangzhong Economic Development Zone, Zhenjiang City, Jiangsu Province

Patentee before: JIANGSU GAOZHAO NEW ENERGY DEVELOPMENT Co.,Ltd.

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Address after: No.198 Guangming Road, Yangzhong Economic Development Zone, Zhenjiang City, Jiangsu Province

Patentee after: Jiangsu Meike Solar Energy Technology Co.,Ltd.

Address before: No.198 Guangming Road, Yangzhong Economic Development Zone, Zhenjiang City, Jiangsu Province

Patentee before: Jiangsu Meike Solar Energy Technology Co.,Ltd.

CP01 Change in the name or title of a patent holder