CN207319036U - 一种动态特性高的mosfet电容结构 - Google Patents
一种动态特性高的mosfet电容结构 Download PDFInfo
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CN113972534A (zh) * | 2021-10-19 | 2022-01-25 | 江西百盈高新技术股份有限公司 | 一种具有防止颠簸滑落结构的车载逆变器 |
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CN113972534A (zh) * | 2021-10-19 | 2022-01-25 | 江西百盈高新技术股份有限公司 | 一种具有防止颠簸滑落结构的车载逆变器 |
CN113972534B (zh) * | 2021-10-19 | 2023-09-29 | 江西百盈高新技术股份有限公司 | 一种具有防止颠簸滑落结构的车载逆变器 |
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Effective date of registration: 20210125 Address after: Room 810, 8 / F, building 1, 169 shengxia road and 1658 Zhangdong Road, China (Shanghai) pilot Free Trade Zone, Pudong New Area, Shanghai, 201210 Patentee after: Shanghai ruobast Semiconductor Co.,Ltd. Address before: Room 607, 560 shengxia Road, Pudong New Area, Shanghai, 201203 Patentee before: SHANGHAI BAOXIN SOURCE POWER SEMICONDUCTOR Co.,Ltd. |
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Effective date of registration: 20230518 Address after: Room 909, 9th Floor, Building 2, No. 1298 Daqi Baoshan Road, Beilun District, Ningbo City, Zhejiang Province, 315800 Patentee after: Ningbo Baoxinyuan Power Semiconductor Co.,Ltd. Address before: Room 810, 8 / F, building 1, 169 shengxia road and 1658 Zhangdong Road, China (Shanghai) pilot Free Trade Zone, Pudong New Area, Shanghai, 201210 Patentee before: Shanghai ruobast Semiconductor Co.,Ltd. |