CN207235201U - A kind of low PIM high performance microwaves high frequency composite ceramic substrate - Google Patents
A kind of low PIM high performance microwaves high frequency composite ceramic substrate Download PDFInfo
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- CN207235201U CN207235201U CN201720900626.7U CN201720900626U CN207235201U CN 207235201 U CN207235201 U CN 207235201U CN 201720900626 U CN201720900626 U CN 201720900626U CN 207235201 U CN207235201 U CN 207235201U
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Abstract
A kind of low PIM high performance microwaves high frequency composite ceramic substrate disclosed in the utility model, including microwave high-frequency ceramic insulating dielectric materials layer, microwave high-frequency ceramic insulating dielectric materials layer two sides are equipped with low PIM ceramic bondings piece and matt copper foil layer successively.The ceramic substrate is low with PIM values, and Intermodulation Interference is small, and signal simulation is excellent, and has the characteristics that excellent mechanical strength, proof stress relaxation, creep resistant, heat resistance, water resistance, water vapor resistance, dimensional stability.
Description
Technical field
Ceramic circuit board field is the utility model is related to, more particularly to a kind of low PIM high performance microwaves high frequency composite ceramic
Porcelain substrate.
Background technology
3 rank of passive device small nonlinearity or high-order PIM mixed products fall into caused passive in normal circuit system
Intermodulation issues are one of adverse factors for perplexing frequency microwave communication system.Passive intermodulation problem early stage is mainly to circulator, ripple
Lead, the HIGH-POWERED MICROWAVES device such as coaxial connector, duplexer, attenuator and antenna produces interference.As printed circuit board (PCB) is got over
Plate integrated RF front end is researched and developed to be more widely used in microwave circuit field, signal power, which increases, causes PCB substrate certainly
The PIM problems of body become a road blocking tiger for hindering the development of high-performance radio-frequency circuit antenna.At present, electronic communication is to faster
Transmission speed, bigger transmission capacity, the development of the integrated level of higher, high-power multichannel transmitter in modern microwave communication circuit,
More sensitive receiver, common antenna, complex modulated signal and intensive bandwidth are all in PCB circuit designs and manufacture
Power capacity and PIM indexs propose the performance requirement than traditional PCB substrate higher.Low PIM high performance microwaves high-frequency electrical roadbed
Plate becomes basis and the key technology in this field.
Utility model content
The purpose of this utility model is to provide a kind of low PIM high performance microwaves high frequency composite ceramic substrate, solves above-mentioned
One or more in prior art problem.
A kind of low PIM high performance microwaves high frequency composite ceramic substrate of the utility model offer, including microwave high-frequency ceramic are exhausted
Edge layer of dielectric material, microwave high-frequency ceramic insulating dielectric materials layer two sides are equipped with low PIM ceramic bondings piece and matt copper foil successively
Layer.
In some embodiments, microwave high-frequency ceramic insulating dielectric materials layer is to be total to polytetrafluorethylepowder powder and low temperature
Press 6 in fired ceramic powder end:1-1:3 mixing, after ball mill ball milling 25-35h, then mixed material is placed in mould press and
Into.
In some embodiments, microwave high-frequency ceramic insulating dielectric materials layer is to be total to polytetrafluorethylepowder powder and low temperature
Press 3 in fired ceramic powder end:7 mixing, are placed in mould through ball mill ball milling 30h, then by mixed material, at 300-320 DEG C
At a temperature of press and form.
In some embodiments, low PIM ceramic bondings piece is that low-temp ceramics piece is put into polytetrafluoroethyldispersion dispersion,
Pre- impregnation is carried out through cement dipping machine, then sinters and forms at a temperature of 300-320 DEG C.
In some embodiments, the thickness of low-temp ceramics piece is less than 8.5 μm.
In some embodiments, the thickness of matt copper foil layer is 35-280 μm.
In some embodiments, the surface roughness of matt copper foil layer is less than 0.1 μm.
In some embodiments, low PIM high performance microwaves high frequency composite ceramic substrate is rectangular body, square or arc
Shape song body.
Beneficial effect：The utility model is mixed using polytetrafluoroethylene powder and low-temperature co-fired ceramic powder, through ball mill ball milling
Latter made microwave high-frequency ceramic insulating dielectric materials layer, low with PIM values, Intermodulation Interference is small, and signal simulation is excellent, and has
Excellent mechanical strength, proof stress relaxation, creep resistant, heat resistance, water resistance, water vapor resistance, dimensional stability.Using table
Surface roughness is less than 0.1 μm of matt copper foil, then can effectively reduce the resistance of signals transmission, reduces harmonic wave and combination frequency
The yield of rate component.
The high frequency substrate of arc song body new structure, can adjust high-frequency ceramic substrate according to the demand of circuit design
Radian, with the use of high conductivity metal material as conductor material, be conducive to improve the quality factor of circuit system, increase
The flexibility of circuit design, enables product more to meet actual installation demand, so as to improve the comprehensive performance of product.
Brief description of the drawings
Fig. 1 is a kind of structure of low PIM high performance microwaves high frequency composite ceramic substrate in one embodiment of the utility model
Schematic diagram.
Embodiment
With reference to Figure of description, the utility model is described in more detail.
As shown in Figure 1,
Case study on implementation 1：
A1, make microwave high-frequency ceramic insulating dielectric materials layer 1, is pressed using polytetrafluoroethylene powder and low-temperature co-fired ceramic powder
6:1 is mixed, and forms dielectric material through ball mill ball milling 25h, then dielectric material is placed in mould through 300~320 DEG C
High-temperature laminating forms microwave high-frequency ceramic insulating dielectric materials layer 1；
A2, make low PIM ceramic bondings piece 2, and the low-temp ceramics piece for choosing 8.4 μm of thickness is put into polytetrafluoroethyldispersion dispersion
It is interior to carry out pre-preg through cement dipping machine, low PIM ceramic bondings piece 2 is then made after 300~320 DEG C of high temperature sinterings；
A3, make low PIM high performance microwaves high frequency composite ceramic substrate, and selection surface roughness is 0.09 μm, thickness is
35 μm of matt copper foil 3, matt copper foil 3 is separately positioned on above and below insulating medium layer 1, middle low PIM ceramics
Bonding sheet 2 is spaced and bonds, most compressing through the processing with pressure of 310 ± 10 DEG C of hot environments afterwards, obtains the ceramic base of cuboid
Plate.
Case study on implementation 2：
B1, make microwave high-frequency ceramic insulating dielectric materials layer 1, is pressed using polytetrafluoroethylene powder and low-temperature co-fired ceramic powder
1:3 are mixed, and form dielectric material through ball mill ball milling 35h, then dielectric material is placed in mould through 300~320 DEG C
High-temperature laminating forms microwave high-frequency ceramic insulating dielectric materials layer 1；
B2, make low PIM ceramic bondings piece 2, and the low-temp ceramics piece for choosing 8 μm of thickness is put into polytetrafluoroethyldispersion dispersion
Pre-preg is carried out through cement dipping machine, low PIM ceramic bondings piece 2 is then made after 300~320 DEG C of high temperature sinterings；
B3, make low PIM high performance microwaves high frequency composite ceramic substrate, and selection surface roughness is 0.08 μm, thickness is
280 μm of matt copper foil 3, matt copper foil 3 is separately positioned on above and below insulating medium layer 1, middle low PIM ceramics
Bonding sheet 2 is spaced and bonds, most compressing through the processing with pressure of 310 ± 10 DEG C of hot environments afterwards, obtains the ceramics of arc song body
Substrate.
Case study on implementation 3：
C1, make microwave high-frequency ceramic insulating dielectric materials layer 1, is pressed using polytetrafluoroethylene powder and low-temperature co-fired ceramic powder
3:7 are mixed, and form dielectric material through ball mill ball milling 30h, then dielectric material is placed in mould through 300~320 DEG C
High-temperature laminating forms microwave high-frequency ceramic insulating dielectric materials layer 1；
C2, make low PIM ceramic bondings piece 2, and the low-temp ceramics piece for choosing 7.8 μm of thickness is put into polytetrafluoroethyldispersion dispersion
It is interior to carry out pre-preg through cement dipping machine, low PIM ceramic bondings piece 2 is then made after 300~320 DEG C of high temperature sinterings；
C3, make low PIM high performance microwaves high frequency composite ceramic substrate, and selection surface roughness is 0.085 μm, thickness is
60 μm of matt copper foil 3,3 paper tinsel of matt copper is separately positioned on above and below insulating medium layer 1, middle low PIM ceramics
Bonding sheet 2 is spaced and bonds, most compressing through the processing with pressure of 310 ± 10 DEG C of hot environments afterwards, obtains the ceramic base of square
Plate.
A kind of low PIM high performance microwaves high frequency composite ceramic substrate in embodiment provided by the utility model has
PIM values are low, and Intermodulation Interference is small, and signal simulation is excellent, and with excellent mechanical strength, proof stress relaxation, creep resistant, heat-resisting
The characteristics of property, water resistance, water vapor resistance, dimensional stability.
Presented above is only the preferred embodiment of the utility model, it is noted that to those skilled in the art,
On the premise of not departing from the utility model and creating design, various modifications and improvements can be made, these also should be regarded as this reality
Within new protection domain.
Claims (4)
1. a kind of low PIM high performance microwaves high frequency composite ceramic substrate, it is characterised in that including microwave high-frequency ceramic dielectric
Material layer (1), the one side of the microwave high-frequency ceramic insulating dielectric materials layer (1) be equipped with successively low PIM ceramic bondings piece (2) and
Matt copper foil layer (3), another side are equipped with low PIM ceramic bondings piece (2) and matt copper foil layer (3) successively.
2. a kind of low PIM high performance microwaves high frequency composite ceramic substrate according to claim 1, it is characterised in that described
The thickness of ceramic bonding piece (2) is less than 8.5 μm.
3. a kind of low PIM high performance microwaves high frequency composite ceramic substrate according to claim 1, it is characterised in that described
The thickness of matt copper foil layer (3) is 35-280 μm.
4. a kind of low PIM high performance microwaves high frequency composite ceramic substrate according to claim 1, it is characterised in that described
The surface roughness of matt copper foil layer (3) is less than 0.1 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720900626.7U CN207235201U (en) | 2017-07-24 | 2017-07-24 | A kind of low PIM high performance microwaves high frequency composite ceramic substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720900626.7U CN207235201U (en) | 2017-07-24 | 2017-07-24 | A kind of low PIM high performance microwaves high frequency composite ceramic substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207235201U true CN207235201U (en) | 2018-04-13 |
Family
ID=61853596
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720900626.7U Active CN207235201U (en) | 2017-07-24 | 2017-07-24 | A kind of low PIM high performance microwaves high frequency composite ceramic substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207235201U (en) |
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2017
- 2017-07-24 CN CN201720900626.7U patent/CN207235201U/en active Active
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