CN207072964U - Semiconductor equipment - Google Patents
Semiconductor equipment Download PDFInfo
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- CN207072964U CN207072964U CN201720801357.9U CN201720801357U CN207072964U CN 207072964 U CN207072964 U CN 207072964U CN 201720801357 U CN201720801357 U CN 201720801357U CN 207072964 U CN207072964 U CN 207072964U
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Abstract
A kind of semiconductor equipment.The semiconductor equipment includes multiple chambers, each chamber includes the pedestal for being configured as carrying substrates, at least one chamber is provided with impedance adjustment circuit, and impedance adjustment circuit is configured as adjusting the impedance between the pedestal and earth terminal of corresponding chamber, so that the impedance of multiple chambers is consistent.Thus, the semiconductor equipment impedance between pedestal and earth terminal can be adjusted by impedance adjustment circuit, so that the impedance of multiple chambers is consistent, so as to improve the thin film deposition quality of the semiconductor equipment.
Description
Technical field
Embodiment of the present utility model is related to a kind of semiconductor equipment.
Background technology
In semiconductor fabrication process, semiconductor equipment is a kind of various semiconductor films of conventional formation and conductor film layer
Instrument.For example, in light emitting diode (Light Emitting Diode, LED) manufacture craft, can be set using semiconductor
Standby formed is located at sapphire substrates and n-type gallium nitride (n-GaN) aluminium nitride (ALN) film, so as to improve the electrical property of the LED,
Including brightness, Electro-static Driven Comb performance etc..
In common semiconductor equipment, shielding power supply is coupled in process gas after being introduced into processing chamber by electrode,
So as to which excited gas is plasma, in the plasma under electronics and ionization, thin film deposition is completed.
Utility model content
The utility model embodiment provides a kind of semiconductor equipment.The semiconductor equipment includes multiple chambers, each chamber
Room includes being configured as the pedestal of carrying substrates, and at least one chamber is provided with impedance adjustment circuit, the impedance regulation
Circuit is configured as adjusting the impedance between the pedestal and earth terminal of corresponding chamber, so that the resistance of the multiple chamber
It is anti-to be consistent.
In some instances, the impedance adjustment circuit includes：In first regulation circuit and the second regulation both circuits
At least one, the first regulation circuit includes variable capacitance circuit, for by the impedance higher in multiple chambers
Turn down；The second regulation circuit includes at least one of both variable resistor circuit and variable inductance circuit, for will be more
The relatively low impedance is heightened in the individual chamber.
In some instances, the variable capacitance circuit includes variable capacitance；The variable resistor circuit includes can power transformation
Resistance, the variable inductance circuit include variable inductance.
In some instances, the variable capacitance circuit includes first switch, and the variable resistor circuit also includes second
Switch, the variable inductance circuit also include the 3rd switch.
In some instances, the second regulation circuit includes the variable resistor circuit and the variable inductance circuit,
And the two is arranged in parallel.
In some instances, the second regulation circuit includes the variable resistor circuit and the variable inductance circuit,
And the two is arranged in series.
In some instances, the impedance adjustment circuit includes the described first regulation circuit and the second regulation circuit,
And the two is arranged in parallel.
In some instances, one end of the first regulation circuit and the second regulation at least one of both circuits
First node is connected to, the other end is connected to section point, and the first node is connected with the pedestal of corresponding chamber, described
Section point is grounded.
In some instances, the section point is directly grounded.
In some instances, the capacitance of the variable capacitance is in the range of 50pF-1 μ F.
In some instances, the resistance value of the variable resistor is in the range of 100 Ω -100K Ω.
In some instances, the inductance value of the variable inductance is in the range of 100 μ H-2000 μ H.
In some instances, the chamber also includes cavity, and the pedestal is located at the inside cavity, the impedance regulation
Circuit is located at the containment portion.
At least one embodiment of the utility model also provides a kind of semiconductor equipment according to described by any of the above-described
Impedance adjusting method, including：The impedance of the impedance adjustment circuit is adjusted to adjust the pedestal and earth terminal of corresponding chamber
Between impedance so that the impedance of the multiple chamber is consistent.
The utility model embodiment provides semiconductor equipment and the impedance adjusting method of semiconductor equipment may be such that multiple chambers
The impedance of room is consistent, so as to improve the quality of product.
Brief description of the drawings
In order to illustrate more clearly of the technical scheme of the utility model embodiment, the accompanying drawing of embodiment will be made below simple
Ground introduction, it should be apparent that, drawings in the following description merely relate to some embodiments of the utility model, rather than to this practicality
New limitation.
Fig. 1 is a kind of structural representation of semiconductor equipment middle chamber；
Fig. 2 is the structural representation of another semiconductor equipment middle chamber；
Fig. 3 a are a kind of floor map for semiconductor equipment that the embodiment of the utility model one provides；
Fig. 3 b are the structural representation of cavity in a kind of semiconductor equipment that the embodiment of the utility model one provides；
Fig. 3 c are the schematic diagram that a kind of semiconductor equipment middle impedance that the embodiment of the utility model one provides adjusts circuit；
Fig. 3 d are the schematic diagram that another semiconductor equipment middle impedance that the embodiment of the utility model one provides adjusts circuit；
Fig. 3 e are the schematic diagram that another semiconductor equipment middle impedance that the embodiment of the utility model one provides adjusts circuit；
Fig. 4 is the equivalent circuit diagram for another semiconductor equipment middle chamber that the embodiment of the utility model one provides；
Fig. 5 is the schematic diagram that another semiconductor equipment middle impedance that the embodiment of the utility model one provides adjusts circuit；
Fig. 6 is a kind of schematic diagram for variable capacitance that the embodiment of the utility model one provides；
Fig. 7 is a kind of schematic diagram for variable resistor that the embodiment of the utility model one provides；And
Fig. 8 is a kind of schematic diagram for variable inductance that the embodiment of the utility model one provides.
Embodiment
It is new below in conjunction with this practicality to make the purpose, technical scheme and advantage of the utility model embodiment clearer
The accompanying drawing of type embodiment, the technical scheme of the utility model embodiment is clearly and completely described.Obviously, it is described
Embodiment is part of the embodiment of the present utility model, rather than whole embodiments.Based on described of the present utility model
Embodiment, the every other embodiment that those of ordinary skill in the art are obtained on the premise of without creative work, all belongs to
In the scope of the utility model protection.
Unless otherwise defined, the technical term or scientific terminology that the utility model uses are should be belonging to the utility model
The ordinary meaning that the personage with general technical ability is understood in field." first " that is used in the utility model, " second " and
Similar word is not offered as any order, quantity or importance, and is used only to distinguish different parts." comprising "
Either the similar word such as "comprising" means to occur element before the word or object is covered and appears in the word presented hereinafter
Element or object and its equivalent, and it is not excluded for other elements or object.
Fig. 1 is a kind of structural representation of the chamber in semiconductor equipment.As shown in figure 1, the chamber in the semiconductor equipment
Room includes pedestal 10, cavity 20, electrode 30, shielding power supply 40 and target 50.Pedestal 10 can be used for carrying film to be deposited
Substrate 200, shielding power supply 40 is connected together to electric field with electrode 30, so as to excite the process gas in cavity 20 (for example, argon
Gas) turn into plasma, under electronics and ionization in the plasma, complete the thin film deposition on substrate 200.Example
Such as, by taking the semiconductor equipment of sputter coating class as an example, the cation (such as argon ion) in gas ions bangs in the presence of electric field
Target 50 is hit, the material of target 50 can be sputtered out so as to be deposited on substrate 200.As shown in figure 1, in the semiconductor equipment
In, cavity 20 has an opening 21, and the semiconductor equipment also includes extraction valve 60, vacuum line 70 and vavuum pump 80；Pumping
Valve 60 is arranged in the opening 21 of cavity 20, and vavuum pump 80 is connected by vacuum line 70 with extraction valve 60.
However, by the electron mass in plasma be far smaller than the quality of ion and electronics and ion institute it is electrically charged
It is identical, therefore under phase same electric field, the movement velocity of electronics is faster than the movement velocity of ion, so as to cause the electricity adhered on pedestal
Subnumber mesh excess ions number；Simultaneously as impedance between pedestal and earth terminal be present, and then cause the electric charge of pedestal accumulation not
It can immediately disappear, and then cause pedestal to form back bias voltage over the ground.For physical gas-phase deposition, the size of the bias of pedestal has
Both sides influences：On the one hand it is the kinetic energy for the ion for influenceing bombardment target, is on the other hand the ion for influenceing to hit substrate
Kinetic energy.The bias of pedestal can influence the film performance of deposition on substrate by the influence of above-mentioned both sides, including uniformity of film,
Stress, crystalline quality etc..Therefore, the big I that the bias of pedestal is adjusted by using appropriate method and apparatus obtains well
Deposition effect, there is practical significance.Generally, in physical gas-phase deposition, the size of the bias of pedestal is determined by various factors
Fixed, influenceing the factor of the bias includes process gas species, air pressure, shielding power supply power output etc..However, for specific thing
Physical vapor deposition technique, above-mentioned condition generally immobilize, it is therefore desirable to extra to increase bias adjustment device to adjust pedestal
Bias.
As shown in figure 1, the semiconductor equipment also includes capacitance 91, adaptation 92 and grid bias power supply 93.Bias plasma
Source 90 is connected by adaptation 92 and capacitance 91 with substrate 10, and grid bias power supply 93 is usually radio-frequency power supply；For example, blocking
Electric capacity 91 can be electric capacity of the capacitance within the scope of 100pF-200pF；Grid bias power supply 93 can be frequency 1MHz-25MHz's
Radio-frequency power supply between scope.Adaptation 92 can make the output impedance of load impedance and grid bias power supply 93 match, so as to ensure
The power that grid bias power supply 93 exports farthest is applied on the plasma inside cavity 20.Grid bias power supply 93 by
Radio-frequency power is applied on pedestal 10 by orchestration 92, so as to change the size biased on pedestal 10.By changing grid bias power supply 93
Power output can adjust the size that biases on pedestal 10.However, adjusted by increasing the devices such as grid bias power supply and adaptation
The size of the bias of pedestal can increase the cost of the semiconductor equipment.It is in addition, above-mentioned by increasing grid bias power supply and adaptation
It is limited in scope Deng device come adjust that the mode of the size of the bias of pedestal can adjust.It should be noted that above-mentioned load
Including the plasma in adaptation, capacitance and cavity.
Fig. 2 is the structural representation of the chamber in another semiconductor equipment.As shown in Fig. 2 with partly leading shown in Fig. 1
Unlike body equipment, the semiconductor equipment increases separation layer 94 in cavity 20 between pedestal 10 and electrode 30, and sets and penetrate
Frequency power 95 and capacitance 91, radio-frequency power supply 95 are connected by capacitance 91 with pedestal 10.By adjusting separation layer 94
Spacing and separation layer institute between parameters, such as the area of the thickness of separation layer, separation layer, separation layer and cavity inner wall
Dielectric constant of the dielectric material of use etc., so as to change the size of coupled capacitor between pedestal 10 and electrode 30, and then realize
Regulation to the size of the bias of pedestal.But, on the one hand, above-mentioned semiconductor equipment needs first to open cavity, then adjusts
The parameters of separation layer so as to cause the contaminated risk of cavity, and also add with adjusting the size of the bias of pedestal
The time of bias adjustment reduces efficiency.On the other hand, in practice, due to the thickness of separation layer, the area of separation layer, isolation
The parameter such as dielectric constant of dielectric material can not continuously adjust used by layer, so as to realize to the continuous of the bias of pedestal
Regulation, and in order to meet to the demand of the bias adjustment of pedestal, it is necessary to substantial amounts of different separation layer be made, so as to lead
Cause the cost of which higher.
Therefore, the utility model embodiment provides a kind of semiconductor equipment with the impedance adjusting method of semiconductor equipment.Should
Semiconductor equipment includes multiple chambers, and each chamber includes the pedestal for being configured as carrying substrates, and at least one chamber is provided with resistance
Anti- regulation circuit, impedance adjustment circuit is configured as adjusting the impedance between the pedestal and earth terminal of corresponding chamber, so that multiple
The impedance of chamber is consistent.Thus, the impedance between pedestal and earth terminal can be adjusted by impedance adjustment circuit
Section, so that the impedance of multiple chambers is consistent, so as to improve the thin film deposition quality of the semiconductor equipment.Also, should
Impedance adjustment circuit can not have to be arranged in cavity, so as to improve base on the premise of preferable impedance regulating effect is ensured
The regulation efficiency of impedance between seat and earth terminal.In addition, the structure of the semiconductor equipment is simple, cost is relatively low, beneficial to popularization.
Below, the impedance of the semiconductor equipment and semiconductor equipment that are provided with reference to accompanying drawing the utility model embodiment is adjusted
Section method illustrates.
Embodiment one
The present embodiment provides a kind of semiconductor equipment.Fig. 3 a are to be shown according to a kind of plane of semiconductor equipment of the present embodiment
It is intended to.As shown in Figure 3 a, the semiconductor equipment includes multiple chambers 100.For the simplicity of diagram, Fig. 3 b are shown according to this reality
Apply the structural representation of single chamber 100 in the semiconductor equipment of example.As shown in Figure 3 b, chamber 100 include can carrying substrates 200
Pedestal 110, chamber 100 is provided with impedance adjustment circuit 190, the base of the adjustable corresponding chamber 100 of impedance adjustment circuit 190
Impedance between seat 110 and earth terminal 300, so that the impedance of multiple chambers 100 is consistent.6 chambers are shown in Fig. 3 a
Room, but this is not particularly limited according to embodiment of the present utility model.In addition, in these multiple chambers, at least one chamber
Room can be provided with the impedance adjustment circuit shown in Fig. 3 b.
When the semiconductor equipment provided using the present embodiment makes the film layer in semiconductor devices, can be adjusted by impedance
Circuit causes the impedance of multiple chambers to be consistent, so as to may be such that the size of the bias of the pedestal in multiple chambers keeps one
Cause, so as to improve the uniformity of the film layer of the semiconductor devices and repeatability, and then the product of the semiconductor devices can be improved
Matter.On the other hand, the structure of the semiconductor equipment is simple, and cost is relatively low, beneficial to popularization.
For example, as shown in Figure 3 a, the semiconductor equipment also includes transfer chamber 900, multiple chambers 100 and transfer chamber
900 are connected, and are set around transfer chamber 900.
For example, as shown in Figure 3 a, the semiconductor equipment also includes the load lock chamber being connected with transfer chamber 900
700 and 800, to realize the transmission of the substrate between transfer chamber and front end environment.
Fig. 3 c-3e are the schematic diagram that circuit is adjusted according to a kind of semiconductor equipment middle impedance of the present embodiment.Such as Fig. 3 c-3e
Shown, impedance adjustment circuit includes：At least one of both first regulation regulation circuits 320 of circuit 310 and second, first
Regulation circuit 310 includes variable capacitance circuit 191, for impedance higher in multiple chambers to be turned down；Second regulation circuit 320
Including variable resistor circuit 192 and variable inductance circuit 193 both at least one of, for by resistance relatively low in multiple chambers
It is anti-to heighten.
For example, as shown in Fig. 3 c-3e, variable capacitance circuit 191 includes variable capacitance 1910；Variable resistor circuit 192 wraps
Variable resistor 1920 is included, variable inductance circuit 193 includes variable inductance 1930.
For example, as shown in Fig. 3 c-3e, variable capacitance circuit 191 also includes first switch 1961, variable resistor circuit 192
Also include second switch 1962, variable inductance circuit 193 also includes the 3rd switch 1963.
For example, as shown in Fig. 3 c-3e, the second regulation circuit 320 includes variable resistor circuit 192 and variable inductance circuit
193, and the two is arranged in parallel.Certainly, the utility model includes but is not limited to this, variable resistor circuit and variable inductance circuit
It can be arranged in series.
For example, as shown in Fig. 3 c-3e, impedance adjustment circuit includes the first regulation circuit 310 and second and adjusts circuit 320,
And the two is arranged in parallel.Certainly, the utility model includes but is not limited to this, and impedance adjustment circuit can only include the first regulation electricity
Road, or, impedance adjustment circuit can only include the second regulation circuit.
For example, as shown in Fig. 3 c-3e, the first regulation circuit 310 and second adjusts at least one of both circuits 320
One end is connected to first node 194, and the other end is connected to section point 195, the pedestal phase of first node 194 and corresponding chamber
Even, section point 195 is grounded.For example, section point can be directly grounded.
In the semiconductor equipment that the example of the present embodiment one provides, as shown in Figure 3 c, impedance adjustment circuit 190 may include the
One regulation circuit 310 and second adjusts circuit 320, and the first regulation circuit 310 includes variable capacitance circuit 191, the second regulation electricity
Road 320 includes variable resistor circuit 192；As shown in Figure 3 d, voltage regulator circuit 190 may include the first regulation circuit 310 and second
Circuit 320 is adjusted, the first regulation circuit 310 includes variable capacitance circuit 191, and the second regulation circuit 320 includes variable inductance line
Road 193；As shown in Figure 3 e, impedance adjustment circuit 190 may include the first regulation circuit 310 and the second regulation circuit 320, first
Regulation circuit 310 may include variable capacitance circuit 191, the second regulation variable resistor circuit 192 of circuit 320 and variable inductance circuit
193.As shown in Fig. 3 c-3e, variable capacitance circuit 191 includes the variable capacitance 1910 and first switch 1961 of concatenation, can power transformation
Hindering circuit 192 includes the variable resistor 1920 and second switch 1962 of concatenation, and variable inductance circuit 193 includes the variable of concatenation
The switch of inductance 1930 and the 3rd 1963；Variable resistor circuit 192 and variable inductance circuit 193 both at least one of and it is variable
One end of capacitor lines 191 is connected to first node 194, and the other end is connected to section point 195, first node 194 and pedestal
110 are connected, and section point 195 is grounded.
In the semiconductor equipment that the present embodiment provides, by adjusting the first regulation circuit and second in impedance adjustment circuit
At least one of circuit is adjusted, to change the impedance of pedestal and earth terminal, the release of the electric charge accumulated on pedestal over the ground can be changed
Channel characteristic, so as to change the accumulation of electric charge on pedestal, so as to realize the purpose of the bias of regulation pedestal.Impedance adjustment circuit
In variable capacitance there is gain effect to the bias of pedestal, for example, can be made with accessing variable capacitance by closing first switch
The bias increase of pedestal；Variable resistor and variable inductance in impedance adjustment circuit have declining profit effect, example to the bias of pedestal
Such as, at least one of both are switched to access in variable resistor and variable inductance at least by closing second switch and the 3rd
One of can reduce the bias of pedestal.Because the bias of pedestal can influence the film performance of deposition on substrate, including film is uniform
Property, stress, crystalline quality etc., therefore the bias of pedestal can be adjusted by impedance adjustment circuit, partly led so as to improve this
The thin film deposition quality of body equipment.Also, when the semiconductor equipment provided using multiple the present embodiment is made in semiconductor devices
Film layer when, can be consistent by the size of the bias of the pedestal of the different semiconductor equipments of impedance adjustment circuit, so as to
The uniformity and repeatability of the film layer of the semiconductor devices can be improved, and then the quality of the semiconductor devices can be improved.It is another
Aspect, the impedance adjustment circuit are not required to be arranged in the cavity of the semiconductor equipment, are using impedance adjustment circuit regulation base
Cavity need not be opened during the bias of seat, so as to improve impedance regulation effect on the premise of preferable impedance regulating effect is ensured
Rate.In addition, the structure of the semiconductor equipment is simple, cost is relatively low, beneficial to popularization.It should be noted that above-mentioned pedestal is inclined
Pressure increase or reduction refer to that the amplitude of the bias of pedestal increaseds or decreases.For example, when the bias of pedestal is back bias voltage, such as-
30V, the bias increase of above-mentioned pedestal can be changed into -60V for the bias of pedestal from -30V, and the bias of above-mentioned pedestal, which reduces, to be
The bias of pedestal is changed into -10V from -30V.
It is worth noting that, when needing to increase the impedance of pedestal, can be by closing both second switch and the 3rd switch
At least one of to access at least one of variable resistor and variable inductance.Relative to variable resistor, because inductance is to base
The waveform shape of the bias of seat has a great influence, larger by accessing and adjusting the adjustable bias amplitude of variable inductance.Relatively,
It can increase the continuity degree of bias adjustment by accessing and adjusting variable resistor.
For example, in the semiconductor equipment that the example of the present embodiment one provides, as shown in Figure 3 e, impedance adjustment circuit 190 wraps
Include variable capacitance circuit 191, variable resistor circuit 192 and variable inductance circuit 193.Variable capacitance circuit 191, variable resistor
One end of circuit 192 and variable inductance circuit 193 is connected to first node 194, and the other end is connected to section point 195.Thus,
Impedance adjustment circuit in the semiconductor equipment can select to need variable capacitance, the variable resistor accessed according to different needs
And variable inductance.For example, when needing to increase the size of bias of pedestal, first switch can be closed to access variable capacitance；When
When needing to reduce the size of the bias of pedestal, it is variable to access that at least one of both second switch and the 3rd switch can be closed
At least one of resistance and variable inductance；When need suppress pedestal bias momentary spike when, can close first switch with
Access variable capacitance.
For example, in the semiconductor equipment that the example of the present embodiment one provides, section point is directly grounded.Here section point
" being directly grounded " refers to that section point can be directly electrically connected to earth terminal by wire etc., and centre no longer plugs other devices
Or power lights.The semiconductor equipment that the present embodiment provides need not set extra radio-frequency power supply, be set so as to reduce the semiconductor
Standby cost.
For example, in the semiconductor equipment that the example of the present embodiment one provides, variable capacitance is continuous variable electric capacity, so as to
Realize continuously adjusting to the bias of pedestal.Certainly, the utility model embodiment includes but is not limited to this, and variable capacitance is alternatively
Other variable capacitances.
For example, in the semiconductor equipment that the example of the present embodiment one provides, the capacitance of variable capacitance is 50pF-1 μ F's
In the range of.
For example, in the semiconductor equipment that the example of the present embodiment one provides, variable resistor is continuous variable resistance, so as to
Realize continuously adjusting to the bias of pedestal.Certainly, the utility model embodiment includes but is not limited to this, and variable resistor is alternatively
Other variable resistors.
For example, in the semiconductor equipment that the example of the present embodiment one provides, the resistance value of variable resistor is in 100 Ω -100K
In the range of Ω.For example, the resistance value of variable resistor can be further chosen in the range of 200 Ω -100K Ω.
For example, in the semiconductor equipment that the example of the present embodiment one provides, variable inductance is continuous variable inductance, so as to
Realize continuously adjusting to the bias of pedestal.Certainly, the utility model embodiment includes but is not limited to this, and variable inductance is alternatively
Other variable inductances.
For example, in the semiconductor equipment that the example of the present embodiment one provides, the inductance value of variable inductance is in 100 μ H-2000
In the range of μ H.
For example, as shown in Figure 3 b, the semiconductor equipment that the example of the present embodiment one provides also includes cavity 120, pedestal 110
Inside cavity 120, impedance adjustment circuit 190 is located at outside cavity 120.In the semiconductor equipment provided the present embodiment
When voltage on pedestal is adjusted, it is not necessary to the state opened cavity and opened in cavity carries out bias adjustment, so as to
Cavity is avoided to be contaminated；On the other hand, due to then returning to the process conditions being vapor-deposited needs one after opening cavity
The fixed time, and if the bias of the pedestal after regulation can not meet process requirements, it is also necessary to it is again turned on cavity and carries out partially
Pressure regulation, therefore, the efficiency of bias adjustment can be significantly increased in the semiconductor equipment that the present embodiment provides.
For example, as shown in Figure 3 b, the semiconductor equipment that the example of the present embodiment one provides also includes electrode 130, positioned at cavity
It is oppositely arranged in 120 and with pedestal 110, electrode 130 is connected to shielding power supply 140.In the semiconductor equipment that the present embodiment provides
In, shielding power supply 140 is connected together to electric field with electrode 130, so as to excite the process gas in cavity 120 (for example, argon
Gas) turn into plasma, under electronics and ionization in the plasma, complete the thin film deposition on substrate 200.Example
Such as, by taking the semiconductor equipment of sputter coating class as an example, the cation (such as argon ion) in gas ions bangs in the presence of electric field
Target 150 is hit, the material of target 150 can be sputtered out so as to be deposited on substrate 200.In addition, in the semiconductor equipment,
Cavity 120 has an opening 121, and the semiconductor equipment also includes extraction valve 160, vacuum line 170 and vavuum pump 180；Take out
Air valve 160 is arranged in the opening 121 of cavity 120, and vavuum pump 180 is connected by vacuum line 170 with extraction valve 160.Need
Illustrate, except the semiconductor equipment of sputter coating class, the semiconductor equipment that the utility model embodiment provides can also be it
The physical deposition device of his type, such as the semiconductor equipment of ion film plating class.
For example, shielding power supply can be pulse dc power, its frequency can be in 5KHz-1MHz scope.
Fig. 4 is the equivalent circuit diagram according to a kind of semiconductor equipment middle chamber of the present embodiment.What is be vapor-deposited
During, the plasma 125 in cavity can be equivalent to inductance 127 and resistance 129 is in parallel.Plasma 125 and electrode (target
Material) between sheath layer capacitance 131 be present；The first node 194 of impedance adjustment circuit is connected to pedestal, and the second of impedance adjustment circuit
Node 195 is grounded.By adjusting the variable capacitance 1910 on impedance adjustment circuit, variable resistor 1920 and variable inductance 1930
The release channel characteristic of the electric charge accumulated on pedestal over the ground can be changed, so as to change the accumulation of electric charge on pedestal, so as to adjust
The bias of pedestal.Access or do not access variable by first switch 1961, the switch of second switch 1962 and the 3rd 1963 respectively
Electric capacity 1910, variable resistor 1920 and variable inductance 1930.The electricity of access is adjusted by directly adjusting variable capacitance 1910
The size of capacitance, the size of the resistance value of access is adjusted by directly adjusting variable resistor 1920, and by directly adjusting
Variable inductance 1930 adjusts the size of the inductance value of access, so as to accurately be adjusted to the bias of pedestal.Need to illustrate
, the impedance adjustment circuit in Fig. 4 illustrates by taking the structure in Fig. 3 e as an example, and certainly, the utility model embodiment includes
But not limited to this, the impedance adjustment circuit in Fig. 4 can also use the structure shown in Fig. 3 c or Fig. 3 d.
For example, as shown in Fig. 3 c- Fig. 3 e, in variable capacitance circuit 191, first switch 1961 is located at variable capacitance 1910
Between first node 194；In variable resistor circuit 192, second switch 1962 is located at variable resistor 1920 and first node
Between 194；In variable inductance circuit 193, the 3rd switch 1963 is between variable inductance 1930 and first node 194.When
So, the utility model embodiment includes but is not limited to this.
Fig. 5 is the schematic diagram of the impedance adjustment circuit in another semiconductor equipment according to the present embodiment.Such as Fig. 5 institutes
Show, in variable capacitance circuit 191, first switch 1961 is between variable capacitance 1910 and section point 195.Namely
Say, the position in variable capacitance circuit of first switch and variable capacitance can exchange.It should be noted that the resistance in Fig. 5
Anti- regulation circuit illustrates by taking the structure in Fig. 3 e as an example, and certainly, the utility model embodiment includes but is not limited to this, Fig. 5
In impedance adjustment circuit can also use Fig. 3 c or Fig. 3 d shown in structure.
Similarly, in variable resistor circuit, second switch may be alternatively located between variable resistor and section point；Variable
In inductive circuit, second switch may be alternatively located between variable inductance and section point, and the utility model embodiment is no longer superfluous herein
State.
Fig. 6 is the schematic diagram according to a kind of variable capacitance of the present embodiment.As shown in fig. 6, variable capacitance 1910 may include
More sub- electric capacity 1911 and the multiple first choices switch 1912 being connected respectively with one end of more sub- electric capacity 1911, more height
The other end of electric capacity 1911 is electrical connected.That is, when multiple first choices switch 1912 all closes, more sub- electric capacity
1911 is in parallel.Thus, variable capacitance can be adjusted by closing or disconnecting one or more of multiple first choices switches
Capacitance.It should be noted that variable capacitance can also use other structures, as long as capacitance is adjustable.
For example, sub- electric capacity can be at least one capacitance tunable capacitor and capacitance fixed capacity, so as to realize adjustable electric
The capacitance of appearance is adjustable or continuously adjustabe.
Fig. 7 is the schematic diagram according to a kind of variable resistor of the present embodiment.As shown in fig. 7, variable resistor 1920 may include
More sub- resistance 1921 and multiple second selecting switch 1922 being connected respectively with one end of more sub- resistance 1921, more height
The other end of resistance 1921 is electrical connected.That is, when multiple second selecting switch 1922 all close, more sub- resistance
1921 is in parallel.Thus, variable resistor can be adjusted by closing or disconnecting one or more of multiple second selecting switch
Resistance value.It should be noted that variable resistor can also use other structures, as long as resistance value is adjustable.
For example, sub- resistance can be at least one resistance value adjustable resistance and resistance value fixed resistance, so as to realize adjustable electric
The resistance value of resistance is adjustable or continuously adjustabe.
Fig. 8 is the schematic diagram according to a kind of variable inductance of the present embodiment.As shown in figure 8, variable inductance 1930 may include
More sub- inductance 1931 and multiple 3rd selecting switch 1932 being connected respectively with one end of more sub- inductance 1931, more height
The other end of inductance 1931 is electrical connected.That is, when multiple 3rd selecting switch 1932 all close, more sub- inductance
1931 is in parallel.Thus, variable inductance can be adjusted by closing or disconnecting one or more of multiple 3rd selecting switch
Inductance value.It should be noted that variable inductance can also use other structures, as long as inductance value is adjustable.
For example, sub- inductance can be at least one inductance value controllable impedance and inductance value fixed inductance, so as to realize adjustable electric
The inductance value of sense is adjustable or continuously adjustabe.
Embodiment two
The present embodiment provides a kind of impedance adjusting method of semiconductor equipment, and it includes：Adjust the impedance adjustment circuit
Impedance to adjust the impedance between the pedestal and earth terminal of corresponding chamber so that the impedance of the multiple chamber is protected
Hold consistent.Thus, can be consistent by the impedance of the multiple chambers of impedance adjustment circuit, so as to may be such that in multiple chambers
The size of bias of pedestal be consistent, so as to improve the uniformity of the film layer of the semiconductor devices and repeatability, enter
And the quality of the semiconductor devices can be improved.On the other hand, the impedance adjustment circuit is not required to be arranged on the chamber of the semiconductor equipment
In vivo, cavity need not be opened when adjusting the bias of pedestal using the impedance adjustment circuit, so as to ensure preferably bias
Bias adjustment efficiency is improved on the premise of regulating effect.In addition, the structure of the semiconductor equipment is simple, cost is relatively low, beneficial to pushing away
Extensively.
The impedance adjusting method for the semiconductor equipment that one example of the present embodiment provides includes step S201-S203.
Step S201：Disconnect impedance adjustment circuit and measure the size of the bias of pedestal.
It should be noted that above-mentioned disconnection impedance adjustment circuit refers to that impedance adjustment circuit disconnects with pedestal, for example, with
, can be by disconnecting the first switch in impedance adjustment circuit, second switch and the 3rd exemplified by impedance adjustment circuit shown in Fig. 3 e
Switch to disconnect impedance adjustment circuit.It should be noted that the utility model embodiment includes but is not limited to this, also can be first
One master switch is set between node and pedestal, disconnection impedance adjustment circuit is realized by disconnecting master switch.It is in addition, above-mentioned
The bias size of pedestal refers to the voltage of pedestal over the ground.
For example, the bias of oscilloscope measurement pedestal can be passed through.
Step S202：Compare the magnitude relationship of the bias and benchmark bias of pedestal.
For example, can be by being tested in reference with semiconductor equipment, good (the good film of optional taking technique result
Can) when pedestal on bias as benchmark bias.
Step S203：If the bias of pedestal biases less than benchmark, close first switch and disconnect second switch and the 3rd and open
Close, and adjust the size of variable capacitance to reduce the difference of the bias of pedestal and benchmark bias, if the bias of pedestal is more than benchmark
Bias, close at least one of both second switch and the 3rd switch and disconnect first switch, and adjust the second of closure and open
Close and the size of the variable resistor corresponding at least one the 3rd switchs and/or variable inductance is to reduce the bias of pedestal and benchmark
The difference of bias.It should be noted that above-mentioned closure first switch and disconnecting second switch and the 3rd switch refers to：If resistance
Anti- regulation circuit includes one of second switch and the 3rd switch in both, then disconnect that the impedance adjustment circuit includes second opens
Close or the 3rd switchs, if impedance adjustment circuit disconnects the impedance adjustment circuit simultaneously including second switch and the 3rd switch
Including second switch and the 3rd switch.At least one above-mentioned closure second switch and the 3rd switch refer to：If impedance is adjusted
Road of economizing on electricity includes one of second switch and the 3rd switch in both, then close second switch that the impedance adjustment circuit includes or
3rd switch, if impedance adjustment circuit, simultaneously including second switch and the 3rd switch, closing the impedance adjustment circuit includes
Second switch and/or the 3rd switch.
The present embodiment provide semiconductor equipment impedance adjusting method in, by adjust in impedance adjustment circuit can
Become at least one of both resistance and variable inductance and variable capacitance, the release of the electric charge accumulated on pedestal over the ground can be changed and led to
Road characteristic, so as to change the accumulation of electric charge on pedestal, so as to adjust the bias of pedestal.Variable capacitance in impedance adjustment circuit
There is gain effect to the bias of pedestal, i.e. closure first switch access variable capacitance can play the effect of the bias of increase pedestal
Fruit；Variable resistor and variable inductance in impedance adjustment circuit have declining profit effect to the bias of pedestal, i.e. closure second switch
Access variable resistor can play the effect for the bias for reducing pedestal, and the switch access variable inductance of closure the 3rd can play reduction pedestal
Bias effect.Because the bias of pedestal can influence the film performance of deposition on substrate, including uniformity of film, stress, knot
Crystalloid amount etc., therefore the bias of pedestal can be adjusted by impedance adjustment circuit, so as to improve the thin of the semiconductor equipment
Film deposition quality.Also, the bias of the pedestal of the different semiconductor equipments of impedance adjusting method can be provided by the present embodiment
Size be consistent, so as to improve the uniformity of the film layer in the semiconductor devices of semiconductor equipment making and repeatable
Property, and then the quality of the semiconductor devices can be improved.On the other hand, when using the bias of impedance adjusting method regulation pedestal
Cavity need not be opened, so as to improve bias adjustment efficiency on the premise of preferable bias adjustment effect is ensured.
For example, in the semiconductor equipment that the example of the present embodiment one provides, when the bias of pedestal is less than benchmark bias, closure
First switch simultaneously disconnects second switch and the 3rd switch, and the size for adjusting variable capacitance is inclined with benchmark to reduce the bias of pedestal
During the difference of pressure, if after closing first switch and disconnecting second switch and the 3rd switch to access variable capacitance, the bias of pedestal
Biased still less than benchmark, the bias of pedestal can be increased by increasing the capacitance of variable capacitance, if closure first switch is simultaneously
After disconnecting second switch and the 3rd switch to access variable capacitance, the bias of pedestal biases still above benchmark, can pass through reduction
The capacitance of variable capacitance reduces the bias of pedestal.
For example, in the semiconductor equipment that the example of the present embodiment one provides, the initial value that variable capacitance can be set is variable
The median of the capacity valve regulating range of electric capacity, consequently facilitating the capacitance of increase or reduction variable capacitance.For example, variable capacitance
Capacity valve regulating range when being 50pF-1 μ F, the initial value that variable capacitance can be set is 5000pF.
For example, in the semiconductor equipment that the example of the present embodiment one provides, if the bias of above-mentioned pedestal is inclined more than benchmark
Pressure, close at least one second switch and the 3rd switch and disconnect first switch, and adjust the second switch of closure and the 3rd and open
The size of variable resistor and/or variable inductance corresponding at least one closing is to reduce the difference of the bias of pedestal and benchmark bias
When include following three kinds of situations：(1) close second switch and disconnect the 3rd switch and first switch to access variable resistor, this
When, if after closing second switch and disconnecting the 3rd switch and first switch to access variable resistor, the bias of pedestal is still higher than
Benchmark biases, then can reduce the bias of pedestal by increasing the resistance value of variable resistor, if closure second switch and disconnecting the
After three switches and first switch are to access variable resistor, the bias of pedestal biases less than benchmark, then can be by reducing variable resistor
Resistance value increase the bias of pedestal；(2) closure the 3rd switch and disconnect second switch and first switch can power transformation to access
Sense, now, if after closure the 3rd switchs and disconnects second switch and first switch to access variable inductance, the bias of pedestal is still
Biased higher than benchmark, then can reduce the bias of pedestal by increasing the inductance value of variable inductance, if closure the 3rd is switched and broken
After second switch and first switch are opened to access variable inductance, the bias of pedestal biases less than benchmark, then can be variable by reducing
The inductance value of inductance increases the bias of pedestal；(2) closure the 3rd switch and second switch and disconnect first switch can to access
Become resistance and variable inductance, now, variable resistor and variable inductance are in parallel, if the switch of closure the 3rd and second switch and disconnecting the
After one switch is to access variable resistor and variable inductance, the bias of pedestal is still higher than benchmark bias, then can be variable by increasing
The resistance value of resistance and the inductance value of increase variable inductance reduce the bias of pedestal, if the switch of closure the 3rd and second switch are simultaneously
After disconnecting first switch to access variable resistor and variable inductance, the bias of pedestal is less than benchmark and biased, then can by reduction
Become the resistance value of resistance and the inductance value of reduction variable inductance to increase the bias of pedestal.
For example, in the semiconductor equipment that the example of the present embodiment one provides, the initial value that variable resistor can be set is variable
The median of the resistance value adjusting scope of resistance, consequently facilitating the resistance value of increase or reduction variable resistor.For example, variable resistor
Resistance value adjusting scope when being 100 Ω -100K Ω, the initial value that variable resistor can be set is 50K Ω.Similarly, setting can
Become the initial value of inductance as the median of the inductance value adjustable range of variable inductance, consequently facilitating increasing or reducing variable inductance
Inductance value.For example, when the inductance value adjustable range of variable inductance is 100 μ H-2000 μ H, the initial value of settable variable inductance is
1000μH。
For example, the impedance adjusting method for the semiconductor equipment that the example of the present embodiment one provides also includes：In the bias of pedestal
The momentary spike of the bias of pedestal is measured in the case of being biased more than benchmark；The size for comparing momentary spike and benchmark spike is closed
System；And if momentary spike is more than benchmark spike, first switch is closed, and adjusts the size of variable capacitance to suppress instantaneous point
Peak.Thus, when the momentary spike of the bias of pedestal is higher, the wink can be suppressed by the impedance adjusting method that the present embodiment provides
When spike.
For example, in the impedance adjusting method for the semiconductor equipment that the example of the present embodiment one provides, the peak value of benchmark spike
More than or equal to the 120% of the stationary value of the bias of pedestal.
For example, in the impedance adjusting method for the semiconductor equipment that the example of the present embodiment one provides, the present embodiment is being used
When the impedance adjusting method of offer suppresses momentary spike, because the variable capacitance of access has gain effect, meeting to the bias of pedestal
Increase the bias of pedestal；Therefore, can by the initial value of variable capacitance be variable capacitance minimum value, so as to reduce variable capacitance
Influence to the size of the bias of pedestal.
For example, the impedance adjusting method for the semiconductor equipment that the example of the present embodiment one provides also includes：Pedestal is measured again
Bias size；Compare the magnitude relationship of the bias and benchmark bias of pedestal；And the second switch and the 3rd of regulation closure
The size of variable resistor and/or variable inductance corresponding at least one switch is to reduce the difference of the bias of pedestal and benchmark bias
Value.Thus, when the impedance adjusting method provided using the present embodiment suppresses momentary spike, in access variable capacitance to suppress wink
When spike when, if the size of the bias of pedestal changes, above-mentioned process can be passed through the size of the bias of pedestal is carried out
Adjust again, so that the difference for the size that the size of the bias of pedestal biases with benchmark is within the scope of allowable error.
Have it is following some need to illustrate：
(1) in the utility model embodiment accompanying drawing, the structure being related to the utility model embodiment is related only to, other
Structure refers to be commonly designed.
(2) in the case where not conflicting, the feature in the utility model the same embodiment and different embodiments can be mutual
Combination.
Described above is only exemplary embodiment of the present utility model, not for limitation protection model of the present utility model
Enclose, the scope of protection of the utility model is determined by appended claim.
Claims (13)
- A kind of 1. semiconductor equipment, it is characterised in that including：Multiple chambers,Wherein, each chamber includes the pedestal for being configured as carrying substrates, and at least one chamber is provided with impedance regulation Circuit, the impedance adjustment circuit is configured as adjusting the impedance between the pedestal and earth terminal of corresponding chamber, so that institute The impedance for stating multiple chambers is consistent.
- 2. semiconductor equipment according to claim 1, it is characterised in that the impedance adjustment circuit includes：First regulation At least one of circuit and the second regulation both circuits,The first regulation circuit includes variable capacitance circuit, for the impedance higher in multiple chambers to be turned down；The second regulation circuit includes at least one of both variable resistor circuit and variable inductance circuit, for will be multiple The relatively low impedance is heightened in the chamber.
- 3. semiconductor equipment according to claim 2, it is characterised in that the variable capacitance circuit includes variable capacitance, The variable resistor circuit includes variable resistor, and the variable inductance circuit includes variable inductance.
- 4. semiconductor equipment according to claim 3, it is characterised in that the variable capacitance circuit includes first switch, The variable resistor circuit also includes second switch, and the variable inductance circuit also includes the 3rd switch.
- 5. semiconductor equipment according to claim 3, it is characterised in that the second regulation circuit can power transformation including described in Circuit and the variable inductance circuit are hindered, and the two is arranged in parallel.
- 6. semiconductor equipment according to claim 3, it is characterised in that the second regulation circuit can power transformation including described in Circuit and the variable inductance circuit are hindered, and the two is arranged in series.
- 7. semiconductor equipment according to claim 2, it is characterised in that the impedance adjustment circuit includes described first and adjusted Economize on electricity road and the second regulation circuit, and the two is arranged in parallel.
- 8. semiconductor equipment according to claim 2, it is characterised in that the first regulation circuit and second regulation One end of at least one of both circuits is connected to first node, and the other end is connected to section point, the first node with The pedestal of corresponding chamber is connected, the section point ground connection.
- 9. semiconductor equipment according to claim 8, it is characterised in that the section point is directly grounded.
- 10. semiconductor equipment according to claim 3, it is characterised in that the capacitance of the variable capacitance is in 50pF-1 μ In the range of F.
- 11. semiconductor equipment according to claim 3, it is characterised in that the resistance value of the variable resistor 100 Ω- In the range of 100K Ω.
- 12. semiconductor equipment according to claim 3, it is characterised in that the inductance value of the variable inductance is in 100 μ H- In the range of 2000 μ H.
- 13. according to the semiconductor equipment any one of claim 1-12, it is characterised in that the chamber also includes：Cavity, the pedestal are located at the inside cavity, and the impedance adjustment circuit is located at the containment portion.
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| CN201720801357.9U CN207072964U (en) | 2017-07-04 | 2017-07-04 | Semiconductor equipment |
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| CN201720801357.9U CN207072964U (en) | 2017-07-04 | 2017-07-04 | Semiconductor equipment |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107227446A (en) * | 2017-07-04 | 2017-10-03 | 北京北方华创微电子装备有限公司 | Semiconductor equipment and its impedance adjusting method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107227446A (en) * | 2017-07-04 | 2017-10-03 | 北京北方华创微电子装备有限公司 | Semiconductor equipment and its impedance adjusting method |
| WO2019007207A1 (en) * | 2017-07-04 | 2019-01-10 | 北京北方华创微电子装备有限公司 | Semi-conductor apparatus and impedance regulation method therefor |
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