CN207069279U - A kind of all solid state Q-switched pulse lasers of 1300nm based on molybdenum disulfide - Google Patents
A kind of all solid state Q-switched pulse lasers of 1300nm based on molybdenum disulfide Download PDFInfo
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- CN207069279U CN207069279U CN201720890728.5U CN201720890728U CN207069279U CN 207069279 U CN207069279 U CN 207069279U CN 201720890728 U CN201720890728 U CN 201720890728U CN 207069279 U CN207069279 U CN 207069279U
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- molybdenum disulfide
- speculum
- solid state
- saturable absorber
- switched pulse
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Abstract
A kind of all solid state Q-switched pulse lasers of 1300nm based on molybdenum disulfide, the laser main device include semiconductor laser, coupled lens, level crossing, Nd:LuAG crystal, speculum, molybdenum disulfide saturable absorber and outgoing mirror.Semiconductor laser with tail optical fiber output produces the continuous light of 808nm and passes through level crossing and Nd:After LuAG crystal, then molybdenum disulfide saturable absorber is reflected through by speculum, finally by adjusting Q pulse laser that outgoing mirror output wavelength is 1300nm.The utility model utilizes saturable absorption characteristic possessed by New Two Dimensional material molybdenum disulfide, obtains the pulse laser of high-energy, realizes the pulse output of nanosecond.
Description
Technical field
The utility model belongs to laser technology and its non-linear optical field, and in particular to a kind of based on molybdenum disulfide
The all solid state Q-switched pulse lasers of 1300nm.
Background technology
The method peeled off from Univ Manchester UK Novoselov in 2004 etc. using micromechanics successfully peels off individual layer
Since graphene, graphene has obtained extensive concern and research.Although graphene good properties, because graphene is natural
Zero band gap feature, this greatly limits application of the graphene in integrated circuit, microelectronic component etc..Therefore, except graphite
Beyond alkene, people are also constantly exploring other two-dimensional materials, such as magnesium-yttrium-transition metal disulphide etc., wherein molybdenum disulfide are especially
Attract attention.The molybdenum disulfide of individual layer is special " sandwich " structure for being mingled with one layer of molybdenum atom between two layers of sulphur atom,
Combined between layers by Van der Waals force, the distance between every layer is 0.65nm.With the continuous reduction of the molybdenum disulfide number of plies, band
Gap can be increasing, when individual layer, can become direct band gap from indirect band gap, its direct band gap is up to 1.8ev.Therefore, it is this
Unique band structure causes molybdenum disulfide scene effect transistor, sensor, microelectronics and photoelectric device etc. to have
Vast application prospect.Currently, ultra-short pulse laser is widely used in optical fiber and led to because having the characteristics of pulse width, frequency spectrum is wide
Letter, photoelectric sensing, non-linear medical treatment, biomedicine etc..Wherein, Q-regulating technique is because compared with broad pulse width and relatively low repetition
Frequency can produce simple venation high energy, be widely used in the multiple fields such as ranging, environmental remote sensing, material, medical science.Adjust Q skills
Art can be subdivided into passive Q-adjusted technology and actively Q-switched technology again, and compared to active mode of operation, passive modulation Q has structure simple
The advantages such as list, efficiency high, cost are low, easy to operate, stability is good.
Utility model content
The utility model is directed to deficiency of the prior art, there is provided a kind of all solid state tune Q of 1300nm based on molybdenum disulfide
Pulse laser.
To achieve the above object, the utility model uses following technical scheme：
A kind of all solid state Q-switched pulse lasers of 1300nm based on molybdenum disulfide, it is characterised in that including：Arrange successively
Semiconductor laser, coupled lens, level crossing, Nd:LuAG crystal, speculum, molybdenum disulfide saturable absorber and output
Mirror；The semiconductor laser band tail optical fiber exports, and continuous light focuses on by coupled lens caused by semiconductor laser, after focusing
Continuous light pass through level crossing and Nd successively:LuAG crystal, then by molybdenum disulfide saturable absorber after being reflected by speculum,
Finally by the output Q-switched pulse laser of outgoing mirror；Wherein, the reflecting surface and Nd of speculum:LuAG crystal 4 and molybdenum disulfide saturable
Absorber is relative so that from Nd:The light of LuAG crystal output is directly entered the suction of molybdenum disulfide saturable after speculum reflects
Acceptor, resonator is formed between the level crossing and outgoing mirror.
To optimize above-mentioned technical proposal, the concrete measure taken also includes：
The continuous center wavelength of light of the semiconductor laser is 808nm, and the last output wavelength of outgoing mirror is
1300nm adjusting Q pulse laser.
The one side of the level crossing towards speculum is coated with 808nm anti-reflection films.
The one side of the level crossing towards speculum is coated with 1300nm high-reflecting films.
The one side of the speculum towards molybdenum disulfide saturable absorber is coated with 1300nm high-reflecting films.
The one side of the outgoing mirror towards molybdenum disulfide saturable absorber is coated with 1300nm high transmittance films.
The beneficial effects of the utility model are：
1st, compared compared to currently hotter graphene, molybdenum disulfide possesses 1.8ev direct band gap, and non-linear full
It is unique with characteristic, it can more be widely used in optical fiber laser field；
2nd, can be by controlling its preparation process to change carrier using molybdenum disulfide saturable absorber as Q-switching device
The number of plies and defect of surface molybdenum disulfide material, obtain different energy bandgaps and then realize MoS2Saturable absorption material is not
With the operating of laser wavelength；
3rd, using v-shaped cavity scheme, cavity structure, increase chamber length, it is easier to realize that pulse exports are optimized.
Brief description of the drawings
Fig. 1 is overall structure diagram of the present utility model.
Embodiment
Describe the utility model in detail below in conjunction with the accompanying drawings.
It has now been found that for the band gap of two-dimensional material graphene zero, the molybdenum disulfide of individual layer is because of special " three
Mingzhi is sandwich " structure can become direct band gap from indirect band gap, and its direct band gap is about 1.8ev.Locking film by molybdenum disulfide can
High energy pulse laser is obtained, realizes the pulse laser output of nanosecond even femtosecond.Moreover, by the excellent of preparation technology
Change can control molybdenum disulfide number of layers and defect, can obtain different-energy band gap and then realize that different laser wavelengths can satisfy
With the normal operation of absorber.
The all solid state Q-switched pulse lasers of 1300nm based on molybdenum disulfide as shown in Figure 1, V-shaped cavity configuration, including according to
Semiconductor laser 1, coupled lens 2, level crossing 3, the Nd of secondary arrangement:LuAG crystal 4, speculum 5, molybdenum disulfide saturable are inhaled
Acceptor 6 and outgoing mirror 7.Semiconductor laser 1 exports with tail optical fiber, and the caused continuous light of 808nm focuses on by coupled lens 2, gathers
Defocused continuous light passes through level crossing 3 and Nd successively:LuAG crystal 4, then by molybdenum disulfide saturable after being reflected by speculum 5
Absorber 6, finally by the output wavelength of outgoing mirror 7 be 1300nm adjusting Q pulse laser.The reflecting surface and Nd of speculum 5:LuAG is brilliant
Body 4 and molybdenum disulfide saturable absorber 6 are relative so that from Nd:The light that LuAG crystal 4 exports is straight after the reflection of speculum 5
Tap into molybdenum disulfide saturable absorber 6.The one side of level crossing 3 towards speculum 5 is coated with 808nm anti-reflection films, the court of level crossing 3
1300nm high-reflecting films are coated with to the one side of speculum 5, the one side of speculum 5 towards molybdenum disulfide saturable absorber 6 is coated with
1300nm high-reflecting films, the one side of outgoing mirror 7 towards molybdenum disulfide saturable absorber 6 are coated with 1300nm high transmittance films.
The operation principle of optical parametric oscillator is：It is continuous that 808nm is produced by the semiconductor laser 1 exported with tail optical fiber
Light, focused on by coupled lens 2, the continuous light after focusing passes through level crossing 3, and level crossing 3 reflects 1300nm light, with outgoing mirror
Form resonator between 7, and Nd:LuAG crystal 4 produces 1300nm light, is reflected by speculum 5, passes through molybdenum disulfide saturable
Absorber 6, finally by the output wavelength of outgoing mirror 7 be 1300nm adjusting Q pulse laser.
The operation principle of molybdenum disulfide saturable absorber 6 is：Suction of the molybdenum disulfide saturable absorber 6 to endovenous laser
Receipts can change with the change of distribution of light intensity, and strong to light absorbs when distribution of light intensity is weaker, cavity loss is big, light transmission rate
It is low.Occur absorbing saturated phenomenon when light intensity exceedes particular value, now light transmission rate is up to 100% so that light intensity is obtaining maximum
It is lost while laser pulse by minimum, exports the pulse laser of maximum intensity.
It should be noted that cited such as " on ", " under ", the use of "left", "right", "front", "rear" in utility model
Language, be merely convenient to narration understand, and be not used to limit the enforceable scope of the utility model, the change of its relativeness or
Adjustment, in the case where changing technology contents without essence, when being also considered as the enforceable category of the utility model.
It the above is only preferred embodiment of the present utility model, the scope of protection of the utility model is not limited merely to above-mentioned
Embodiment, all technical schemes belonged under the utility model thinking belong to the scope of protection of the utility model.It should be pointed out that pair
For those skilled in the art, some improvements and modifications under the premise of the utility model principle is not departed from,
It should be regarded as the scope of protection of the utility model.
Claims (6)
- A kind of 1. all solid state Q-switched pulse lasers of 1300nm based on molybdenum disulfide, it is characterised in that including：Arrange successively Semiconductor laser（1）, coupled lens（2）, level crossing（3）、Nd:LuAG crystal（4）, speculum（5）, molybdenum disulfide saturable Absorber（6）And outgoing mirror（7）；The semiconductor laser（1）Band tail optical fiber exports, semiconductor laser（1）It is caused continuous Light passes through coupled lens（2）Focus on, the continuous light after focusing passes through level crossing successively（3）And Nd:LuAG crystal（4）, then by anti- Penetrate mirror（5）Pass through molybdenum disulfide saturable absorber after reflection（6）, finally by outgoing mirror（7）Output Q-switched pulse laser；Wherein, The speculum（5）Reflecting surface and Nd:LuAG crystal（4）With molybdenum disulfide saturable absorber（6）Relatively so that from Nd: LuAG crystal（4）The light of output passes through speculum（5）Molybdenum disulfide saturable absorber is directly entered after reflection（6）, it is described flat Face mirror（3）And outgoing mirror（7）Between form resonator.
- 2. a kind of all solid state Q-switched pulse lasers of 1300nm based on molybdenum disulfide as claimed in claim 1, its feature exist In：The semiconductor laser（1）The continuous center wavelength of light of transmitting is 808nm, outgoing mirror（7）Finally output wavelength is 1300nm adjusting Q pulse laser.
- 3. a kind of all solid state Q-switched pulse lasers of 1300nm based on molybdenum disulfide as claimed in claim 2, its feature exist In：The level crossing（3）Towards speculum（5）One side be coated with 808nm anti-reflection films.
- 4. a kind of all solid state Q-switched pulse lasers of 1300nm based on molybdenum disulfide as claimed in claim 2, its feature exist In：The level crossing（3）Towards speculum（5）One side be coated with 1300nm high-reflecting films.
- 5. a kind of all solid state Q-switched pulse lasers of 1300nm based on molybdenum disulfide as claimed in claim 2, its feature exist In：The speculum（5）Towards molybdenum disulfide saturable absorber（6）One side be coated with 1300nm high-reflecting films.
- 6. a kind of all solid state Q-switched pulse lasers of 1300nm based on molybdenum disulfide as claimed in claim 2, its feature exist In：The outgoing mirror（7）Towards molybdenum disulfide saturable absorber（6）One side be coated with 1300nm high transmittance films.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720890728.5U CN207069279U (en) | 2017-07-21 | 2017-07-21 | A kind of all solid state Q-switched pulse lasers of 1300nm based on molybdenum disulfide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720890728.5U CN207069279U (en) | 2017-07-21 | 2017-07-21 | A kind of all solid state Q-switched pulse lasers of 1300nm based on molybdenum disulfide |
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| Publication Number | Publication Date |
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| CN207069279U true CN207069279U (en) | 2018-03-02 |
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| CN201720890728.5U Expired - Fee Related CN207069279U (en) | 2017-07-21 | 2017-07-21 | A kind of all solid state Q-switched pulse lasers of 1300nm based on molybdenum disulfide |
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- 2017-07-21 CN CN201720890728.5U patent/CN207069279U/en not_active Expired - Fee Related
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180302 Termination date: 20190721 |