CN116316030B - Self-mode-locking laser capable of improving output power - Google Patents
Self-mode-locking laser capable of improving output power Download PDFInfo
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- CN116316030B CN116316030B CN202310421790.XA CN202310421790A CN116316030B CN 116316030 B CN116316030 B CN 116316030B CN 202310421790 A CN202310421790 A CN 202310421790A CN 116316030 B CN116316030 B CN 116316030B
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1106—Mode locking
- H01S3/1109—Active mode locking
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0604—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising a non-linear region, e.g. generating harmonics of the laser frequency
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
- H01S5/0657—Mode locking, i.e. generation of pulses at a frequency corresponding to a roundtrip in the cavity
Abstract
The application belongs to the technical field of laser, and particularly discloses a self-mode-locking laser for improving output power, which comprises an excitation light source, an adjustable optical system, a gain chip, a folding resonant cavity mirror and a rear-end resonant cavity mirror, wherein the excitation light source is arranged on the front end of the laser; a first light spot adjusting arm is formed between the gain chip and the folding resonant cavity mirror, and a second light spot adjusting arm is formed between the folding resonant cavity mirror and the rear-end resonant cavity mirror; the size of the first light spot adjusting arm and the second light spot adjusting arm can be changed simultaneously by adjusting the position of the folding resonant cavity mirror, and the size of the second light spot adjusting arm can be changed by adjusting the position of the rear resonant cavity mirror; changing the size of the first and second spot adjusting arms can change the size of the continuous and pulsed spots on the gain chip. The light spot sizes of the pulse light and the continuous light on the gain chip are changed, so that the pulse light competes out through the gain, the self-mode locking process is started, the larger gain is obtained, the output power of the self-mode locking laser is greatly improved, and the application range of the self-mode locking laser is expanded.
Description
Technical Field
The application belongs to the technical field of laser, and particularly relates to a self-mode-locking laser capable of improving output power.
Background
The mode-locked laser can generate ultra-short pulse with pulse time width in the order of picosecond to femtosecond, has high time resolution and high pulse peak power, and has very important application in the fields of time resolution spectroscopy, leading edge scientific research such as intense field extreme physics, and the like, life science such as super resolution microscope, two-photon imaging and the like, and advanced manufacturing fields such as laser fine machining and the like.
The self-mode locking laser utilizes the nonlinear lens effect in the gain medium, combines with the special laser resonant cavity design, can start the mode locking process by itself, does not need to additionally increase elements for starting the mode locking, simplifies the structure of the laser while reducing the cost of the laser, and increases the mechanical stability and portability of the laser. Meanwhile, since the nonlinear lens effect in the gain medium is of a type of fast saturable absorber and has extremely short recovery time, the self-mode locking laser can also obtain a shorter pulse time width than other types of mode locking lasers.
The existing self-mode locking lasers all use light spots generated by an excitation light source on a gain medium as a soft diaphragm, so that the lasers work at the edge of a stable region of a resonant cavity, pulse lasers can be better focused on the gain medium through the nonlinear lens effect, and light spots smaller than continuous lasers are formed, so that compared with the continuous lasers, the loss of the pulse lasers is smaller, and the mode competition is successful, so that the mode locking process is started, and the ultra-short mode locking pulse output is obtained. The disadvantage of this method is that the energy of the excitation light is not fully utilized, which limits the output power of the self-mode-locking laser to a certain extent and limits the application range of the self-mode-locking laser.
Disclosure of Invention
The application aims to provide a self-mode-locking laser capable of improving output power, so as to solve the problems that the existing self-mode-locking laser cannot fully utilize the energy of exciting light, the output power of the self-mode-locking laser is limited to a certain extent, and the application range of the self-mode-locking laser is limited.
In order to achieve the above purpose, the technical scheme of the application is as follows: the self-mode-locking laser for improving the output power comprises an excitation light source, an adjustable optical system, a gain chip, a folding resonant cavity mirror and a rear-end resonant cavity mirror, wherein the gain chip comprises a reflecting mirror, an active area and a barrier layer which are sequentially arranged; the reflecting mirror, the folding resonant cavity mirror and the rear resonant cavity mirror form a laser resonant cavity;
the exciting light emitted by the exciting light source is focused on the gain chip after being regulated by the adjustable optical system;
the adjustable-focus optical system is used for changing the size of an excitation light spot of excitation light on the gain chip;
the reflecting mirror of the gain chip can reflect the laser wavelength; the active area of the gain chip forms a nonlinear lens under the light excitation; the barrier layer of the gain chip can prevent photon-generated carriers from diffusing to the outer surface of the gain chip;
the folding resonant cavity mirror is used for folding the light path, and can reflect the laser wavelength;
the rear-end resonant cavity mirror is used for outputting laser, and the rear-end resonant cavity mirror can transmit laser wavelength;
a first light spot adjusting arm is formed between the gain chip and the folding resonant cavity mirror, and a second light spot adjusting arm is formed between the folding resonant cavity mirror and the rear-end resonant cavity mirror; the size of the first light spot adjusting arm and the second light spot adjusting arm can be changed simultaneously by adjusting the position of the folding resonant cavity mirror, and the size of the second light spot adjusting arm can be changed by adjusting the position of the rear resonant cavity mirror; changing the size of the first and second spot adjusting arms can change the size of the continuous and pulsed spots on the gain chip.
Further, the gain chip is a semiconductor laser chip or a solid gain chip.
Further, the gain chip further comprises an anti-oxidation layer, and the anti-oxidation layer is used for preventing the laser from being oxidized.
Further, the reflecting mirror comprises a plurality of groups of refraction pairs which are sequentially arranged, each group of refraction pairs comprises a high refractive index layer and a low refractive index layer, and the high refractive index layer and the low refractive index layer are alternately arranged.
Further, the active region comprises a plurality of active pairs which are sequentially arranged, each active pair comprises an excitation absorption layer and a light-emitting layer, and the excitation absorption layers and the light-emitting layers are alternately arranged; the excitation absorption layer is used for absorbing energy of excitation photons and generating photon-generated carriers; the light-emitting layer is used for capturing photo-generated carriers, the photo-generated carriers spontaneously radiate transition in the light-emitting layer, and the spontaneous radiate transition is amplified and oscillated under the action of the laser resonant cavity to form laser output.
Further, the gain chip is fixed on a heat sink, and the heat sink is used for radiating heat.
Further, the band gap energy of the barrier layer is larger than the band gap energy of the excitation absorbing layer, the band gap energy of the light emitting layer, and the photon energy of the excitation light source.
The working principle of the technical scheme is as follows: the adjustable optical system focuses the excitation light emitted by the excitation light source onto the gain chip, and can adjust the size of the excitation light spot of the excitation light source on the gain chip according to the requirement. The excitation absorption layer in the gain chip absorbs the energy of the excitation photons to generate photogenerated carriers. Photogenerated carriers are trapped by the light-emitting layer, creating spontaneous radiative transitions in the light-emitting layer. The spontaneous radiation transitions are amplified and form oscillations under the action of the laser resonator, forming a laser output. The heat generated in the gain chip is taken away by the heat sink and dissipated. The laser resonant cavity consists of a reflecting mirror at the bottom of the gain chip, a folding resonant cavity mirror and a rear-end resonant cavity mirror. The rear-end resonant cavity mirror has certain transmittance to laser wavelength and plays a role of an output mirror. The folding resonant cavity mirror is used for folding the optical path in the laser and simultaneously changing the lengths of the first light spot adjusting arm and the second light spot adjusting arm.
In the working process of the laser, when the intensity of exciting light reaches a certain value, an active area in the gain chip generates a nonlinear lens effect under the action of noise pulse. By utilizing the nonlinear lens effect and combining different length designs of the first light spot adjusting arm and the second light spot adjusting arm, the sizes of an excitation light spot, a pulse light spot and a continuous light spot on a gain chip can meet a certain relation, so that the pulse light spot is smaller than the continuous light spot (the existing self-mode locking starting method), namely, the pulse light has smaller loss than the continuous light, and the self-mode locking process is started. The pulse light spot can be larger than the continuous light spot and smaller than the excitation light spot, so that the pulse light has larger gain than the continuous light to start the self-mode locking process and improve the output power of the self-mode locking laser.
The beneficial effects of this technical scheme lie in: in the self-mode locking laser, the size of a laser spot of an excitation light source on a gain chip is regulated by using an adjustable-focus optical system, the lengths of a first spot regulating arm and a second spot regulating arm are changed by using a folding resonant cavity mirror and a rear resonant cavity mirror to be matched, the size of a spot of pulse light and a spot of continuous light on the gain chip is changed by combining a nonlinear lens effect in an active area of the gain chip, so that the size relation among the excitation spot, the pulse spot and the continuous spot can meet the continuous spot of the excitation spot > the pulse spot >, the pulse light competes out through gain, a self-mode locking process is started, and meanwhile, larger gain is obtained, the output power of the self-mode locking laser is greatly improved, and the application range of the self-mode locking laser is greatly expanded.
Drawings
FIG. 1 is a schematic diagram of a self-mode-locking laser of the present application with increased output power;
FIG. 2 is a block diagram of the gain chip of FIG. 1;
FIG. 3 is a plot of spot size on the gain chip of FIG. 1;
fig. 4 is a graph of spot size on a gain chip in the background art.
Detailed Description
The following is a further detailed description of the embodiments:
reference numerals in the drawings of the specification include: the light source comprises a heat sink 1, a gain chip 2, an excitation light source 3, an adjustable-focus optical system 4, a folding resonant cavity mirror 5, a rear resonant cavity mirror 6, a first light spot adjusting arm 7, a second light spot adjusting arm 8, a reflecting mirror 9, an active region 10, a high refractive index layer 11, a low refractive index layer 12, an excitation absorption layer 13, a luminous layer 14, a barrier layer 15, an oxidation prevention layer 16, a nonlinear lens 17, an excitation light spot 18, a continuous light spot 19 and a pulse light spot 20.
The following description of the embodiments of the present application will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present application, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
The embodiment is basically as shown in the accompanying figures 1-3: the self-mode-locking laser for improving output power comprises a heat sink 1, an excitation light source 3, an adjustable-focus optical system 4, a gain chip 2, a folding resonant cavity mirror 5 and a rear-end resonant cavity mirror 6, wherein the heat sink 1 is made of high-heat-conductivity materials, and the heat sink 1 is bonded at the rear end of the gain chip 2 and used for radiating heat. The gain chip 2 is a semiconductor laser chip or a solid gain chip, and as shown in fig. 2, the gain chip 2 includes a reflecting mirror 9, an active region 10, a barrier layer 15 and an anti-oxidation layer 16, which are sequentially disposed, and the anti-oxidation layer 16 is used for preventing the laser from being oxidized, and the reflecting mirror 9, the folded resonant cavity mirror 5 and the rear resonant cavity mirror 6 form a laser resonant cavity.
The excitation light emitted by the excitation light source 3 is focused on the gain chip 2 after being regulated by the adjustable-focus optical system 4.
The adjustable-focus optical system 4 is used to vary the size of the excitation light spot 18 on the gain chip 2.
The mirror 9 of the gain chip 2 is capable of reflecting the laser wavelength, the mirror 9 comprising a plurality of sets of refractive pairs arranged in sequence, each set of refractive pairs comprising a high refractive index layer 11 and a low refractive index layer 12, the high refractive index layer 11 and the low refractive index layer 12 being arranged alternately. The active region 10 of the gain chip 2 forms a nonlinear lens 17 under optical excitation (when the laser works and the intensity of excitation light reaches a certain value, the active region 10 in the gain chip 2 generates nonlinear lens 17 effect under the action of noise pulse), and the nonlinear lens 17 can be a positive lens or a negative lens. The active region 10 comprises a plurality of active pairs which are sequentially arranged, each active pair comprises an excitation absorption layer 13 and a light-emitting layer 14, and the excitation absorption layers 13 and the light-emitting layers 14 are alternately arranged; the excitation absorption layer 13 is used for absorbing energy of excitation photons and generating photon-generated carriers; the light-emitting layer 14 is used for capturing photo-generated carriers, the photo-generated carriers spontaneously radiate transitions in the light-emitting layer 14, and the spontaneous radiating transitions are amplified and form oscillation under the action of the laser resonant cavity to form laser output. The band gap energy of the barrier layer 15 is larger than the band gap energy of the excitation absorbing layer 13, the band gap energy of the light emitting layer 14, and the photon energy of the excitation light source 3, and the barrier layer 15 of the gain chip 2 can prevent photogenerated carriers from diffusing to the outer surface of the gain chip 2.
The folded resonant cavity mirror 5 is used for folding the optical path, and the folded resonant cavity mirror 5 can reflect the laser wavelength.
The rear-end resonator mirror 6 is used for outputting laser light, and the rear-end resonator mirror 6 can transmit the laser wavelength.
A first light spot adjusting arm 7 is formed between the gain chip 2 and the folding resonant cavity mirror 5, and a second light spot adjusting arm 8 is formed between the folding resonant cavity mirror 5 and the rear-end resonant cavity mirror 6; the size of the first light spot adjusting arm 7 and the second light spot adjusting arm 8 can be changed simultaneously by adjusting the position of the folding resonant cavity mirror 5, and the size of the second light spot adjusting arm 8 can be changed by adjusting the position of the rear resonant cavity mirror 6; changing the size of the first spot adjusting arm 7 and the second spot adjusting arm 8 can change the sizes of the continuous spot 19 and the pulsed spot 20 on the gain chip 2.
The specific implementation process is as follows:
the adjustable-focus optical system 4 focuses the excitation light emitted by the excitation light source 3 onto the gain chip 2, and can adjust the size of the excitation light spot 18 of the excitation light source 3 on the gain chip 2 as required. The excitation absorption layer 13 in the gain chip 2 absorbs the energy of the excitation photons, generating photogenerated carriers. Photogenerated carriers are trapped by the light-emitting layer 14, creating spontaneous radiative transitions in the light-emitting layer 14. The spontaneous radiation transitions are amplified and form oscillations under the action of the laser resonator, forming a laser output. The heat generated in the gain chip 2 is carried away by the heat sink 1 and dissipated. The laser resonant cavity consists of a reflecting mirror 9 at the bottom of the gain chip 2, a folding resonant cavity mirror 5 and a rear resonant cavity mirror 6. The rear-end resonant cavity mirror 6 has certain transmittance to the laser wavelength and plays a role of an output mirror. The folded resonator mirror 5 is used for folding the optical path in the laser and changing the lengths of the first spot adjusting arm 7 and the second spot adjusting arm 8.
During operation of the laser, when the intensity of the excitation light reaches a certain value, the active region 10 in the gain chip 2 will produce a nonlinear lens 17 effect under the influence of the noise pulses. By utilizing the nonlinear lens 17 effect and combining different length designs of the first light spot adjusting arm 7 and the second light spot adjusting arm 8, the sizes of the excitation light spot 18, the pulse light spot 20 and the continuous light spot 19 on the gain chip 2 can meet a certain relation, so that the pulse light spot 20 is smaller than the continuous light spot 19 (the existing starting self-mode locking method), namely, the pulse light has smaller loss than the continuous light, and the self-mode locking process is started. The pulsed light spot 20 may also be made larger than the continuous light spot 19 and both smaller than the excitation light spot 18, which may allow the pulsed light to have a larger gain than the continuous light to initiate the self-mode locking process and increase the output power of the self-mode locking laser.
When the relationship among the excitation light spot 18, the pulse light spot 20 and the continuous light spot 19 satisfies fig. 4, the pulse light has smaller loss than the continuous light, and the self-mode locking process can be started, namely the self-mode locking process in the background technology.
When the relation among the excitation light spot 18, the pulse light spot 20 and the continuous light spot 19 satisfies fig. 3, the pulse light has a larger gain than the continuous light, the self-mode locking process can be started, and the pulse light can obtain a larger gain and more fully utilize the energy of the excitation light, so that the output power of the laser is higher under the condition corresponding to fig. 3, namely, under the condition of the application.
The technical solution of the present application is specifically illustrated below by two examples:
embodiment one: the heat sink 1 is a diamond sheet, the high refractive index layer 11 in the mirror 9 of the gain chip 2 is an Al (0.1) GaAs material, and the low refractive index layer 12 is an Al (0.9) GaAs material. The mirror 9 provides a reflectivity of more than 99.9% for a laser wavelength with a center wavelength of 980nm and a bandwidth of its reflection spectrum of more than 50nm.
The excitation absorbing layer 13 In the active region 10 of the gain chip 2 is GaAsP (0.06) material, and the light emitting layer 14 is In (0.16) GaAs material. The spontaneous emission spectrum of the light-emitting layer 14 has a center wavelength around 980 nm.
The barrier layer 15 of the gain chip 2 is made of Al (0.6) GaAs material, and the oxidation preventing layer 16 is made of GaAs material.
The excitation light source 3 is an optical fiber coupling output semiconductor laser diode with the emission wavelength of 808nm, and the core diameter of an optical fiber of a tail fiber is 400 microns. The adjustable-focus optical system 4 is a one-to-one imaging system with a focal length adjustment of between 25mm and 35 mm. The spot radius of the excitation light on the gain chip 2 is 200 μm.
The folding resonant cavity mirror 5 is a plano-concave reflecting mirror 9 with a curvature radius of-200 mm, and a film layer with high reflectivity for 980nm laser wavelength is plated on the concave reflecting surface. The rear resonator mirror 6 is a plane mirror 9, and a film layer with 2% transmittance to 980nm laser wavelength is plated on the reflecting surface and the transmitting surface of the rear resonator mirror.
The nonlinear lens 17 formed in the active region 10 of the gain chip 2 is a negative lens, the focal length of which typically has a value of-3000 mm.
The working point of the laser is selected to be that the length of the first light spot adjusting arm 7 is 111mm, the length of the second light spot adjusting arm 8 is 109mm, at this time, the difference of the radiuses of the continuous light spot 19 and the pulse light spot 20 on the gain chip 2 is-70 microns, and the gain obtained by the pulse light is larger than the gain obtained by the continuous light, so that the pulse light wins in gain competition, and the self-mode locking process is started. The self-mode locking mode fully utilizes the energy of excitation light, and the output power of the self-mode locking laser can be greatly improved.
Embodiment two: the gain chip 2 is a solid gain chip with a certain thickness. The bottom of the solid gain sheet is plated with a film layer with high reflectivity for the laser wavelength of 800nm, and the front end of the solid gain sheet is plated with a film layer with high transmissivity for the excitation light wavelength.
The heat sink 1 is a copper heat sink through which cooling water is passed. The excitation light source 3 was a laser light source having a wavelength of 488 nm. The adjustable-focus optical system 4 is one-to-one imaging system with a focal length in the range of 30mm-50 mm.
The matrix of the solid gain tablet is Al 2 O 3 The matrix is doped with a certain concentration of Ti ions as activating particles. The active particles can absorb the energy of the excitation light, producing a broadband spontaneous emission spectrum. Spontaneous radiation generated by the activated particles forms stimulated radiation under the action of the laser resonant cavity to generate laser oscillation output.
The folding resonant cavity mirror 5 is a plano-concave reflecting mirror 9, the reflecting surface of which is plated with a broadband reflecting film layer, and has high reflectivity of more than 99% in the wavelength range of 700nm-900 nm. The rear end resonant cavity mirror 6 is a plane reflecting mirror 9, a broadband reflecting film layer is plated on the reflecting surface of the plane reflecting mirror, and the plane reflecting mirror has high reflectivity of more than 99% in the wavelength range of 700nm-900 nm.
When the excitation light intensity reaches a certain value in the operation of the laser, a nonlinear lens 17 can be formed in the solid gain chip under the action of noise pulse, and the nonlinear lens 17 is a positive lens.
The curvature radius of the folding resonant cavity mirror 5 is selected appropriately, and the length of the first light spot adjusting arm 7 and the length of the second light spot adjusting arm 8 are selected appropriately, so that the relation among the excitation light spot 18, the pulse light spot 20 and the continuous light spot 19 in the solid gain sheet satisfies the condition that the excitation light spot 18> the pulse light spot 20> the continuous light spot 19. At this time, compared with continuous light, the pulse light obtains larger gain, wins in gain competition, so that the self-mode locking process can be started, the energy of the excitation light is fully utilized in the mode locking operation, and the output power of the self-mode locking laser is improved.
It is noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
The foregoing is merely an embodiment of the present application, and a specific structure and characteristics of common knowledge in the art, which are well known in the scheme, are not described herein, so that a person of ordinary skill in the art knows all the prior art in the application date or before the priority date, can know all the prior art in the field, and has the capability of applying the conventional experimental means before the date, and a person of ordinary skill in the art can complete and implement the present embodiment in combination with his own capability in the light of the present application, and some typical known structures or known methods should not be an obstacle for a person of ordinary skill in the art to implement the present application. It should be noted that modifications and improvements can be made by those skilled in the art without departing from the structure of the present application, and these should also be considered as the scope of the present application, which does not affect the effect of the implementation of the present application and the utility of the patent. The protection scope of the present application is subject to the content of the claims, and the description of the specific embodiments and the like in the specification can be used for explaining the content of the claims.
Claims (7)
1. The utility model provides an improve self-locking mode laser of output which characterized in that: the tunable optical system comprises an excitation light source (3), an adjustable optical system (4), a gain chip (2), a folding resonant cavity mirror (5) and a rear-end resonant cavity mirror (6), wherein the gain chip (2) comprises a reflecting mirror (9), an active region (10) and a barrier layer (15) which are sequentially arranged; the reflecting mirror (9), the folding resonant cavity mirror (5) and the rear end resonant cavity mirror (6) form a laser resonant cavity;
the exciting light emitted by the exciting light source (3) is focused on the gain chip (2) after being regulated by the adjustable-focus optical system (4);
the adjustable-focus optical system (4) is used for changing the size of an excitation light spot (18) of excitation light on the gain chip (2);
the reflecting mirror (9) of the gain chip (2) can reflect laser; the active region (10) of the gain chip (2) forms a nonlinear lens (17) under optical excitation; the barrier layer (15) of the gain chip (2) can prevent photogenerated carriers from diffusing to the outer surface of the gain chip (2);
the folding resonant cavity mirror (5) is used for folding the light path, and the folding resonant cavity mirror (5) can reflect laser;
the rear-end resonant cavity mirror (6) is used for outputting laser, and the rear-end resonant cavity mirror (6) can transmit the laser;
a first light spot adjusting arm (7) is formed between the gain chip (2) and the folding resonant cavity mirror (5), and a second light spot adjusting arm (8) is formed between the folding resonant cavity mirror (5) and the rear-end resonant cavity mirror (6); the size of the first light spot adjusting arm (7) and the second light spot adjusting arm (8) can be changed simultaneously by adjusting the position of the folding resonant cavity mirror (5), and the size of the second light spot adjusting arm (8) can be changed by adjusting the position of the rear resonant cavity mirror (6); the sizes of the continuous light spots (19) and the pulse light spots (20) on the gain chip (2) can be changed by changing the sizes of the first light spot adjusting arm (7) and the second light spot adjusting arm (8), so that the size relation among the excitation light spots (18), the pulse light spots (20) and the continuous light spots (19) can meet the requirements of the excitation light spots (18) > the pulse light spots (20) > the continuous light spots (19).
2. A self-mode-locked laser of claim 1, wherein the output power is increased by: the gain chip (2) further comprises an anti-oxidation layer (16), and the anti-oxidation layer (16) is used for preventing the laser from being oxidized.
3. A self-mode-locked laser of claim 1, wherein the output power is increased by: the reflecting mirror (9) comprises a plurality of groups of refraction pairs which are sequentially arranged, each group of refraction pairs comprises a high-refractive-index layer (11) and a low-refractive-index layer (12), and the high-refractive-index layers (11) and the low-refractive-index layers (12) are alternately arranged.
4. A self-mode-locked laser of claim 1, wherein the output power is increased by: the active region (10) comprises a plurality of active pairs which are sequentially arranged, each active pair comprises an excitation absorption layer (13) and a light-emitting layer (14), and the excitation absorption layers (13) and the light-emitting layers (14) are alternately arranged; the excitation absorption layer (13) is used for absorbing energy of excitation photons and generating photon-generated carriers; the light-emitting layer (14) is used for capturing photo-generated carriers, the photo-generated carriers spontaneously radiate transitions in the light-emitting layer (14), and the spontaneous radiating transitions are amplified and form oscillation under the action of a laser resonant cavity to form laser output.
5. A self-mode-locked laser of claim 1, wherein the output power is increased by: the gain chip is characterized by further comprising a heat sink (1), wherein the gain chip (2) is fixed on the heat sink (1), and the heat sink (1) is used for radiating heat.
6. The self-mode-locked laser of claim 4, wherein the output power is increased by: the band gap energy of the barrier layer (15) is larger than the band gap energy of the excitation absorption layer (13), the band gap energy of the light emitting layer (14) and the photon energy of the excitation light source (3).
7. The utility model provides an improve self-locking mode laser of output which characterized in that: the laser resonant cavity comprises an excitation light source (3), an adjustable optical system (4), a gain chip (2), a folding resonant cavity mirror (5) and a rear-end resonant cavity mirror (6), wherein the gain chip (2) is a solid gain chip, a film layer for reflecting laser is plated on the solid gain chip, and the solid gain chip, the folding resonant cavity mirror (5) and the rear-end resonant cavity mirror (6) form the laser resonant cavity;
the exciting light emitted by the exciting light source (3) is focused on the gain chip (2) after being regulated by the adjustable-focus optical system (4);
the adjustable-focus optical system (4) is used for changing the size of an excitation light spot (18) of excitation light on the gain chip (2);
the solid gain piece can form a nonlinear lens (17) under the action of exciting light; the solid gain chip contains activating particles capable of absorbing excitation light, spontaneous radiation generated by the activating particles forms stimulated radiation under the action of the laser resonant cavity, and laser oscillation output is generated;
the folding resonant cavity mirror (5) is used for folding the light path, and the folding resonant cavity mirror (5) can reflect laser;
the rear-end resonant cavity mirror (6) is used for outputting laser, and the rear-end resonant cavity mirror (6) can transmit the laser;
a first light spot adjusting arm (7) is formed between the gain chip (2) and the folding resonant cavity mirror (5), and a second light spot adjusting arm (8) is formed between the folding resonant cavity mirror (5) and the rear-end resonant cavity mirror (6); the size of the first light spot adjusting arm (7) and the second light spot adjusting arm (8) can be changed simultaneously by adjusting the position of the folding resonant cavity mirror (5), and the size of the second light spot adjusting arm (8) can be changed by adjusting the position of the rear resonant cavity mirror (6); the sizes of the continuous light spots (19) and the pulse light spots (20) on the gain chip (2) can be changed by changing the sizes of the first light spot adjusting arm (7) and the second light spot adjusting arm (8), so that the size relation among the excitation light spots (18), the pulse light spots (20) and the continuous light spots (19) can meet the requirements of the excitation light spots (18) > the pulse light spots (20) > the continuous light spots (19).
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| CN101414729A (en) * | 2008-11-24 | 2009-04-22 | 南京大学 | Self-mode-locking laser |
| CN104037604A (en) * | 2014-05-30 | 2014-09-10 | 中国科学院物理研究所 | Kerr lens self-mode-locking Yb:LSO laser |
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| US8130800B2 (en) * | 2006-05-17 | 2012-03-06 | Battelle Memorial Institute | Mode-locked solid state lasers using diode laser excitation |
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