CN206225777U - A kind of semiconductor mode-locked laser of adjustable gain containing side/uptake zone - Google Patents
A kind of semiconductor mode-locked laser of adjustable gain containing side/uptake zone Download PDFInfo
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- CN206225777U CN206225777U CN201621247336.9U CN201621247336U CN206225777U CN 206225777 U CN206225777 U CN 206225777U CN 201621247336 U CN201621247336 U CN 201621247336U CN 206225777 U CN206225777 U CN 206225777U
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Abstract
The utility model is related to a kind of semiconductor mode-locked laser of adjustable gain containing side/uptake zone, and the laser uses ridge waveguide structure, and ridge gain region, ridge ripple conductive partition and ridge waveguide saturated absorption area are sequentially formed on the ridge of the ridge waveguide structure；Side adjustable gain/uptake zone is formed in the optional position of ridge gain region side.Side adjustable gain/uptake zone, according to the difference of applied voltage, can be gain region, or uptake zone.Scattering or diffraction that the concaveconvex structure of the optical absorption characteristics that the utility model has using side uptake zone, the reduction nearly wavelength in ridge waveguide side or sub-wavelength magnitude is produced to light；The saturated absorption characteristic having using side uptake zone, is effectively compressed pulse width；Using the gain amplification characteristic of side ridge gain region, the power output of light pulse is improved.So as to realize the output of mode-locked laser high-quality ultrashort pulse, while suitably reducing the requirement to preparation technology precision, Current Voltage complicated debugging when laser performance is tested is simplified.
Description
Technical field
The utility model is related to a kind of light emitting semiconductor device, and in particular to a kind of adjustable gain containing side/uptake zone
Semiconductor mode-locked laser.
Background technology
There are multiple longitudinal modes in laser simultaneously, the phase of these longitudinal modes is separate, and mode-locking technique is exactly these
The PGC demodulation of longitudinal mode gets up, and makes each longitudinal mode synchronous in time, and frequency interval also keeps certain, and such laser will be exported
Pulsed light.Semiconductor mode-locked laser (MLLD) is high with repetition rate, and pulse width, wavelength is accurately controlled, high conversion efficiency,
Good stability, driving power supply is simple, and small volume is lightweight, low in energy consumption, cheap, and the advantages of easy of integration, these advantages are caused
Semiconductor mode-locked laser has become important in the fields such as the optical sampling of optical communication, Optical Clock, optical interconnection, high speed signal
Light source.
In recent years, in order to meet widespread demand of the people to ultra-short pulse source, compression output pulse technique means also exist
It is constantly progressive.Passive type semiconductor mode-locked laser includes ridge gain region and uptake zone, and light arteries and veins is formed first with ridge gain region
Punching, then using the saturable absorption characteristic of uptake zone, when light is propagated in laser resonant cavity, the weaker light of distribution of light intensity
Pulse can be faded away because loss becomes weaker, and the stronger light pulse of distribution of light intensity can be caused when by uptake zone
Absorb saturation and return to ridge gain region again, gradually form pulse amplifying, realize passive mode-locking, ultimately form relatively stable ultrashort
Pulse is exported.It can be said that the power output of light pulse is concerned in ridge gain region, uptake zone can adjust the pulsewidth of light pulse.Mesh
Before, the semiconductor mode-locked laser based on MQW-quantum dot can produce pulsewidth to exist in subpicosecond magnitude, peak power
The ultrashort pulse of hundreds of milliwatts.
The size of semiconductor mode-locked laser is very small, and this is very beneficial for the integrated of light and application, but can also carry simultaneously
Requirement to preparation technology precision high.Semiconductor laser typically passes through photoetching, burn into somatomedin insulating barrier, opens electrode window
The techniques such as mouth, splash-proofing sputtering metal chip structure are formed.Although and photoetching preparation technology is very fine, still suffering from certain precision
Problem, causes when ridge waveguide is made, and the side of ridge can form the concaveconvex structure of nearly wavelength or sub-wavelength magnitude.These concavo-convex knots
Structure can produce scattering or diffraction to light, and the spectral characteristic to device produces harmful effect.
Utility model content
In order to obtain EO-1 hyperion quality, narrow spaces, high-power ultrashort pulse, the utility model provides a kind of containing side
The semiconductor mode-locked laser of adjustable gain/uptake zone, technical scheme is as follows.
A kind of semiconductor mode-locked laser of adjustable gain containing side/uptake zone, the semiconductor mode-locked laser is used
Ridge waveguide structure, ridge gain region, ridge ripple conductive partition and ridge waveguide saturation is sequentially formed on the ridge of the ridge waveguide structure and is inhaled
Area is received, wherein, ridge gain region and ridge waveguide saturated absorption are distinguished and separated by ridge ripple conductive partition；In ridge gain region side
Optional position formed side adjustable gain/uptake zone.
Further, the voltage that side adjustable gain/uptake zone is applied in is reverse biased or forward bias, when in side
When applying reverse biased on side adjustable gain/uptake zone, side adjustable gain/uptake zone is used as uptake zone；When adjustable in side
When applying forward bias on gain/uptake zone, side adjustable gain/uptake zone is used as gain region；When side adjustable gain/absorption
When area is multistage, the voltage that each section of side adjustable gain/uptake zone is applied in is equidirectional or different directions.
Further, it is respectively provided with plane on ridge gain region, ridge waveguide saturated absorption area and side adjustable gain/uptake zone
Electrode, is mutually not attached between the electrode of ridge gain region, ridge waveguide saturated absorption area and side adjustable gain/uptake zone.
Further, the ridge gain region is strip, and the ridge ripple conductive partition is located at ridge gain region along length side
To one end, ridge gain region along its length away from ridge ripple conductive partition one end end face be light output end, light output end
It is coated with anti-reflection film；The optics of high reflectance is coated with away from the end face of one end of ridge ripple conductive partition in ridge waveguide saturated absorption area
Deielectric-coating, end face is each perpendicular to the length direction of ridge gain region with light output end.
Further, form one section of side electricity isolated region in the optional position of the side of ridge gain region one and the side is adjustable
Gain/uptake zone, side electricity isolated region and side adjustable gain/uptake zone are along the direction perpendicular with ridge gain region length direction
The length direction of stacking preparation, side electricity isolated region and side adjustable gain/uptake zone each parallel to ridge gain region；
Or, the optional position spacing side by side in the side of ridge gain region one forms multistage side electricity isolated region and side is adjustable
Gain/uptake zone；Every section of side electricity isolated region and side adjustable gain/uptake zone are along perpendicular with ridge gain region length direction
The length direction of direction stacking preparation, every section of side electricity isolated region and side adjustable gain/uptake zone each parallel to ridge gain region.
Further, one section of side electricity isolated region and the adjustable increasing in side are respectively set in the optional position of the side of ridge gain region two
Benefit/uptake zone, every section of side electricity isolated region and side adjustable gain/uptake zone are along the side perpendicular with ridge gain region length direction
Prepared to stacking, the length direction of every section of side electricity isolated region and side adjustable gain/uptake zone each parallel to ridge gain region.
Further, in the side electricity isolated region and side adjustable gain/uptake zone and opposite side of the side of ridge gain region one
The side electricity isolated region on side and side adjustable gain/uptake zone are symmetrical.
Further, two sides in ridge gain region respectively set multistage side electricity isolated region and side adjustable gain/absorption
Area, every section of side electricity isolated region and side adjustable gain/uptake zone are laminated along the direction perpendicular with ridge gain region length direction
The length direction of preparation, every section of side electricity isolated region and side adjustable gain/uptake zone each parallel to ridge gain region.
Further, each section of side electricity isolated region of the side of ridge gain region two and side adjustable gain/uptake zone are in multistage
Complementary symmetrical is distributed or specular distribution.
Further, the semiconductor mode-locked laser semiconductor mode-locked laser include lower waveguide layer, active area and on
Ducting layer, the lower waveguide layer, active area and upper ducting layer set gradually composition light limiting layer central area, in the lower waveguide
Lower separation limiting layer, substrate and bottom electrode are set gradually under layer, set gradually on upper ducting layer separation limiting layer, cap rock,
Si02 current isolating layers and Top electrode.
The beneficial effects of the utility model：The utility model forms side in the optional position of ridge gain region side can
Gain/uptake zone is adjusted, when reverse biased is applied on side adjustable gain/uptake zone, gain/uptake zone may be regarded as saturable
Absorber, the optical absorption characteristics having using side uptake zone can reduce the nearly wavelength in ridge waveguide side or sub-wavelength magnitude
Scattering or diffraction that concaveconvex structure is produced to light, reduce the harmful effect that lasing is produced to the spectral characteristic of device；Using side
Saturated absorption characteristic that side uptake zone has and its nonlinear refraction for causing, are effectively compressed the width of output pulse.When
When applying positive bias on side adjustable gain/uptake zone, gain/uptake zone may be regarded as gain region, be put using the gain of gain region
Big characteristic, can effectively improve the power output of light pulse.So in the electric current and the electricity in ridge waveguide saturable absorption area of gain region
When pressure keeps certain value, the bias of side adjustable gain/uptake zone is only adjusted, it is possible to which the pulse for optimizing output optical pulse is wide
Degree and spectral characteristic and power output, so as to realize the output of mode-locked laser high-quality ultrashort pulse, while suitably reducing right
The requirement of preparation technology precision, simplifies Current Voltage complicated debugging when laser performance is tested.
Brief description of the drawings
Fig. 1 be the utility model proposes the side optional position adjustable gain containing side of ridge gain region one/uptake zone ridge
Waveguide schematic diagram；
Fig. 2 be the utility model proposes the side optional position of ridge gain region one contain many side adjustable gain/uptake zones
Ridge waveguide schematic diagram；
Fig. 3 be the utility model proposes the side optional position adjustable gain containing side of ridge gain region two/uptake zone ridge
Waveguide schematic diagram；
Fig. 4 be the utility model proposes the side optional position of ridge gain region two contain symmetrical side adjustable gain/suction
Receive the ridge waveguide schematic diagram in area；
Fig. 5 be the utility model proposes two side optional positions of ridge gain region complementary symmetricals containing multistage distribution side can
Adjust the ridge waveguide schematic diagram of gain/uptake zone；
Fig. 6 be the utility model proposes the side optional position of ridge gain region two containing specular be distributed the adjustable increasing in side
The ridge waveguide schematic diagram of benefit/uptake zone.
Specific embodiment
To make the purpose of this utility model, technical scheme and advantage become more apparent, below in conjunction with specific embodiment, and
Referring to the drawings, the utility model is further described.But those skilled in the art know, the utility model does not limit to
In accompanying drawing and following examples.
The utility model proposes a kind of adjustable gain containing side/uptake zone semiconductor mode-locked laser, successively under
Electrode, substrate, lower separation limiting layer, lower waveguide layer, active area, upper ducting layer, upper separation limiting layer, cap rock, Si02Electric current every
Absciss layer, Top electrode are constituted.Active area is, containing five layers of quantum-dot structure of InGaAs, to be embedded in the GaAs waveguides that thickness is 250nm
In, the GaAs/Al of 72nm0.3Ga0.7As superlattices constitute separate limit layer, cap rock by 1500nm Al0.35Ga0.65As is formed, finally
Use SiO2Current isolating layer is done, N-shaped and p-type electrode contact are formed with Ti/Au, substrate is GaAs materials.Laser by photoetching,
Burn into somatomedin insulating barrier, open the techniques such as electrode window through ray, splash-proofing sputtering metal chip structure and formed.
The lower waveguide layer of the laser, active area, upper ducting layer constitute light limiting layer central area, light limiting layer center
Domain constitutes ducting layer, and the laser uses the optional position of ridge waveguide structure, ridge gain region side to form side adjustable gain/suction
Area is received, by optimizing spectral characteristic and light impulse length and power with side adjustable gain/uptake zone described in electric pump.
The specific set location of opposite side adjustable gain/uptake zone is described below in conjunction with the accompanying drawings.
Embodiment 1
Given in Fig. 1 and the ridge waveguide of side adjustable gain/uptake zone is set in the optional position of the side of ridge gain region one
Schematic diagram, sequentially forms ridge gain region 101, ridge ripple conductive partition 105 and ridge waveguide saturation on the ridge of the ridge waveguide structure
Uptake zone 104, wherein, ridge ripple conductive partition 105 separates ridge gain region 101 and ridge waveguide saturated absorption area 104, with shape
Into electric isolution.
Ridge gain region 101 is strip, and ridge ripple conductive partition 105 is located at the one end along its length of ridge gain region 101,
Ridge gain region 101 is along its length light output end 106, light output end away from the end face of one end of ridge ripple conductive partition 105
106 are coated with anti-reflection film, and such as anti-reflection film reflectivity is 5%；In ridge waveguide saturated absorption area 104 away from ridge ripple conductive partition
The end face 107 of 105 one end is coated with the optical medium film of high reflectance, and such as reflectivity is 95% high-reflecting film；End face 107 with go out
Light end face 106 is each perpendicular to the length direction of ridge gain region 101.
Side electricity isolated region 102 and side adjustable gain/uptake zone are prepared in the optional position of the side of ridge gain region one
103, side electricity isolated region 102 and side adjustable gain/uptake zone 103 are along the side perpendicular with the length direction of ridge gain region 101
Prepared to stacking, the length side of side electricity isolated region 102 and side adjustable gain/uptake zone 103 each parallel to ridge gain region 101
To.Wherein, the contacts side surfaces of the first surface of side electricity isolated region 102 and ridge, side electricity isolated region 102 is relative with first surface
Second surface contacted with side adjustable gain/uptake zone 103, the length direction of the along ridge gain region 101 of side electricity isolated region 102
Length more than or equal to the along ridge gain region 101 of side adjustable gain/uptake zone 103 length direction length, to accomplish more
Good electric isolution；The length of the length direction of side electricity isolated region 102 and the along ridge gain region 101 of side adjustable gain/uptake zone 103
Degree is respectively less than or equal to the length of ridge gain region 101.
Ridge ripple conductive partition 105 and side electricity isolated region 102 are using technique shapes such as dry, wet etching or ion implantings
Into, make between the ridge gain region 101 of chip and ridge waveguide saturated absorption area 104 and ridge gain region 101 and side adjustable gain/
There is hundreds of Dao several kilohms resistance value between uptake zone 103, it is ensured that the electric isolution of high level, but be not optically isolated.
Plane is respectively provided with ridge gain region 101, ridge waveguide saturated absorption area 104 and side adjustable gain/uptake zone 103
Electrode, between the electrode of ridge gain region 101, ridge waveguide saturated absorption area 104 and side adjustable gain/uptake zone 103 mutually
It is not attached to.
Add forward current to form gain in laser works, on ridge gain region, add reverse biased in saturated absorption area
Control saturable absorption recovery time, so that compressed pulse widths.When applying reverse biased on side adjustable gain/uptake zone
When, gain/uptake zone is regarded as saturable absorber, when forward bias is applied on side adjustable gain/uptake zone, gain/
Uptake zone is regarded as gain region.Bias only on regulation side adjustable gain/uptake zone 103, the light having using uptake zone is inhaled
Receive the gain amplification characteristic that characteristic or gain region have, it is possible to the spectral characteristic and pulse width of optimization output pulse.
Embodiment 2
The present embodiment is that the side in embodiment 1 only in ridge gain region sets one section with the difference of embodiment 1
Side electricity isolated region 102 and side adjustable gain/uptake zone 103, and set many in a side of ridge gain region in the present embodiment
Section side electricity isolated region and side adjustable gain/uptake zone.Fig. 2 give the side of ridge gain region one set two sections of sides electricity every
From area and the example of side adjustable gain/uptake zone.
Ridge gain region 201, ridge ripple conductive partition 205 and ridge waveguide saturation is sequentially formed on the ridge of ridge waveguide structure to inhale
Area 204 is received, wherein, ridge ripple conductive partition 205 separates ridge gain region 201 and ridge waveguide saturated absorption area 204, to be formed
Electric isolution.
Ridge gain region 201 is strip, and ridge ripple conductive partition 205 is located at the one end along its length of ridge gain region 201,
Ridge gain region 201 is along its length light output end 206, light output end away from the end face of one end of ridge ripple conductive partition 205
206 are coated with anti-reflection film；In ridge waveguide saturated absorption area 204 height is coated with away from the end face 207 of one end of ridge ripple conductive partition 205
The optical medium film of reflectivity, end face 207 is each perpendicular to the length direction of ridge gain region 201 with light output end 206.
Two sections of side electricity isolated regions and side uptake zone, two sections of side electricity are prepared in the optional position of the side of ridge gain region one
Isolated area and side uptake zone prepare side by side in a side of ridge.
First paragraph side electricity isolated region 2021 and side adjustable gain/uptake zone 2031 along with the length side of ridge gain region 201
It is laminated to perpendicular direction and is prepared, first paragraph side electricity isolated region 2021 is parallel with side adjustable gain/uptake zone 2031
In the length direction of ridge gain region 201.Wherein, the contacts side surfaces of the first surface of side electricity isolated region 2021 and ridge, side electricity
The second surface relative with first surface of isolated area 2021 is contacted with side adjustable gain/uptake zone 2031, side electricity isolated region
The length of the length direction of 2021 along ridge gain regions 201 is more than or equal to the along ridge gain region of side adjustable gain/uptake zone 2031
The length direction of the length of 201 length direction, side electricity isolated region 2021 and the along ridge gain region 201 of side uptake zone 2031
Length is respectively less than the length of ridge gain region 201.
Second segment side electricity isolated region 2022 and side adjustable gain/uptake zone 2032 along with the length side of ridge gain region 201
It is laminated to perpendicular direction and is prepared, second segment side electricity isolated region 2022 is parallel with side adjustable gain/uptake zone 2032
In the length direction of ridge gain region 101.Wherein, the contacts side surfaces of the first surface of side electricity isolated region 2022 and ridge, side electricity
The second surface relative with first surface of isolated area 2022 is contacted with side adjustable gain/uptake zone 2032, side electricity isolated region
The length of the length direction of 2022 along ridge gain regions 201 is more than or equal to the along ridge gain region of side adjustable gain/uptake zone 2032
The length of 201 length direction, side electricity isolated region 2022 and the along ridge gain region 201 of side adjustable gain/uptake zone 2032
The length of length direction is respectively less than the length of ridge gain region 201.
Horizontalization is all provided with ridge gain region 201 and ridge waveguide saturated absorption area 204 and side adjustable gain/uptake zone 203
Face electrode, the separate not commissure of electrode in the same area, i.e., the electrode in the region of ridge gain region 201 is separate does not hand over
Even, the separate not commissure of electrode in the region of ridge waveguide saturated absorption area 204, in side adjustable gain/region of uptake zone 203
The separate not commissure of electrode.
Each side adjustable gain/uptake zone can apply the voltage in identical or different direction, each serve as gain or suction
The effect of receipts, to optimize the quality of output optical pulse.
The size of side electricity isolated region 2021 and side electricity isolated region 2022 can be with identical, it is also possible to different；Side is adjustable
The size of gain/uptake zone 2031 and side adjustable gain/uptake zone 2032 can be with identical, it is also possible to different.
Part is repeated no more the present embodiment as hereinbefore.
Embodiment 3
The present embodiment is that the side in embodiment 1 only in ridge gain region sets one section with the difference of embodiment 1
Side electricity isolated region 102 and side adjustable gain/uptake zone 103, and two sides in the present embodiment in ridge gain region are respectively set
One section of side electricity isolated region and side adjustable gain/uptake zone.
As shown in figure 3, sequentially forming ridge gain region 301, ridge ripple conductive partition 305 and ridge on the ridge of ridge waveguide structure
Waveguide saturated absorption area 304, wherein, ridge ripple conductive partition 305 is by 304 points of ridge gain region 301 and ridge waveguide saturated absorption area
Separate, to form electric isolution.Ridge gain region 301 is along its length away from the end face of one end of ridge ripple conductive partition 305
Light end 306, light output end 306 is coated with anti-reflection film；In ridge waveguide saturated absorption area 304 away from the one of ridge ripple conductive partition 305
The end face 307 at end is coated with the optical medium film of high reflectance.
One section of side electricity isolated region 3021 and side adjustable gain/absorption are prepared in the optional position of the side of ridge gain region one
Area 3031, one section of side electricity isolated region 3022 and side adjustable gain/uptake zone 3032 are prepared in the optional position of another side.
Each side adjustable gain/uptake zone can apply the voltage in identical or different direction, each serve as gain or suction
The effect of receipts, to optimize the quality of output optical pulse.
The size of side electricity isolated region 3021 and side electricity isolated region 3022 can be with identical, it is also possible to different；Side is adjustable
The size of gain/uptake zone 3031 and side adjustable gain/uptake zone 3032 can be with identical, it is also possible to different.
Other contents same as Example 1 are repeated no more.
Embodiment 4
The present embodiment is that the side electricity isolated region and side in embodiment 3 per side are adjustable with the difference of embodiment 3
Gain/uptake zone is arranged on the optional position of the side of ridge gain region two, and the side of the side of the present embodiment median ridge gain region one is electric
Isolated area 4021 and side adjustable gain/uptake zone 4031 and the adjustable increasing of the side electricity isolated region 4022 of another side and side
Benefit/uptake zone 4032 is symmetrical, as shown in Figure 4.
The separate not commissure of electrode of each side adjustable gain/uptake zone, can apply the electricity in identical or different direction
Pressure, each serves as the effect of gain or absorption, to optimize the quality of output optical pulse.
Other contents as hereinbefore are repeated no more.
Embodiment 5
The present embodiment is with the difference of embodiment 3, in embodiment 3, one is respectively provided with two sides of ridge gain region
Section side electricity isolated region and side adjustable gain/uptake zone, and in the present embodiment, multistage is respectively set in two sides of ridge gain region
Side electricity isolated region and side adjustable gain/uptake zone, and the side of ridge waveguide two each section of side electricity isolated region and side can
Gain/uptake zone is adjusted to be distributed for multistage complementary symmetrical.
As shown in figure 5, illustrating the complementary side of multistage by taking four sections of side electricity isolated regions and side adjustable gain/uptake zone as an example
Side electricity isolated region and the distribution situation of side uptake zone：The length direction of along ridge gain region 501, in the same side of ridge gain region 501
The first paragraph side electricity isolated region 5021 on side and side adjustable gain/uptake zone 5031 and the 3rd section of side electricity isolated region 5023 and
Second segment side electricity isolated region 5022 and side adjustable gain/uptake zone are reserved between side adjustable gain/uptake zone 5033
The space of 5032 sizes matching, second segment side electricity isolated region 5022 and side adjustable gain/uptake zone 5032 are located at ridge gain
Another side in area 501 position corresponding with the space；Similarly, electrically insulated in the second segment side of the same side in ridge gain region 501
Area 5022 and side adjustable gain/uptake zone 5032 and the 4th section of side electricity isolated region 5024 and side adjustable gain/uptake zone
The 3rd section of adjustable increasing of side electricity isolated region 5023 and side in the space and another side in ridge gain region 501 reserved between 5034
The size of benefit/uptake zone 5033 matches.
The separate not commissure of electrode of each side adjustable gain/uptake zone, can apply the electricity in identical or different direction
Pressure, each serves as the effect of gain or absorption, to optimize the quality of output optical pulse.
Other contents as hereinbefore are repeated no more.
Embodiment 6
The present embodiment is with the difference of embodiment 5, the adjustable increasing of each section of side electricity isolated region and side in embodiment 5
Benefit/uptake zone periodic complementary formula distribution, each section of side electricity isolated region and side adjustable gain/uptake zone are multistage in embodiment 6
Specular is distributed, as shown in fig. 6, adjustable in the first paragraph side electricity isolated region 6021 of the side of ridge gain region 601 1 and side
Gain/uptake zone 6031 with another side in ridge gain region 601 second segment side electricity isolated region 6022 and side adjustable gain/
Uptake zone 6032 is symmetrical, the side of ridge gain region 601 1 the 3rd section of side electricity isolated region 6023 and side adjustable gain/
Uptake zone 6033 with the 4th section of side electricity isolated region 6024 of another side in ridge gain region 601 and side adjustable gain/absorption
Area 6034 is symmetrical.
Other contents as hereinbefore are repeated no more.
It can be seen from above-described embodiment 1-6, the side adjustable gain/uptake zone can be unilateral single hop, such as embodiment 1；
Or unilateral multistage, such as embodiment 2；Or two side single hops, such as embodiment 3 and 4；Or two side multistages, implement
Example 5 and 6.
More than, implementation method of the present utility model is illustrated.But, the utility model is not limited to above-mentioned implementation
Mode.It is all it is of the present utility model spirit and principle within, any modification, equivalent substitution and improvements done etc. should be included in
Within protection domain of the present utility model.
Claims (10)
1. the semiconductor mode-locked laser of a kind of adjustable gain containing side/uptake zone, it is characterised in that the semiconductor mode-locked swashs
Light device uses ridge waveguide structure, and ridge gain region, ridge ripple conductive partition and ridge ripple are sequentially formed on the ridge of the ridge waveguide structure
Saturated absorption area is led, wherein, ridge gain region and ridge waveguide saturated absorption are distinguished and separated by ridge ripple conductive partition；Increase in the ridge
The optional position of Yi Qu sides forms side adjustable gain/uptake zone.
2. semiconductor mode-locked laser according to claim 1, it is characterised in that applied side adjustable gain/uptake zone
Plus voltage be reverse biased or forward bias, when on side adjustable gain/uptake zone apply reverse biased when, side can
Gain/uptake zone is adjusted as uptake zone；When forward bias is applied on side adjustable gain/uptake zone, side adjustable gain/
Uptake zone is used as gain region；When side adjustable gain/uptake zone is multistage, each section of side adjustable gain/uptake zone is applied in
Voltage be equidirectional or different directions.
3. semiconductor mode-locked laser according to claim 1 and 2, it is characterised in that ridge gain region, ridge waveguide saturation are inhaled
Receive and be respectively provided with plane electrode, ridge gain region, ridge waveguide saturated absorption area and side on area and side adjustable gain/uptake zone
Mutually it is not attached between the electrode of adjustable gain/uptake zone.
4. semiconductor mode-locked laser according to claim 1 and 2, it is characterised in that the ridge gain region is strip,
The ridge ripple conductive partition is located at ridge gain region one end along its length, and ridge gain region is conductive away from ridge ripple along its length
The end face of one end of isolated area is light output end, and light output end is coated with anti-reflection film；In ridge waveguide saturated absorption area away from ridge waveguide
The end face of one end of electricity isolated region is coated with the optical medium film of high reflectance, and end face is each perpendicular to ridge gain region with light output end
Length direction.
5. semiconductor mode-locked laser according to claim 1 and 2, it is characterised in that in appointing for the side of ridge gain region one
Meaning position forms one section of side electricity isolated region and side adjustable gain/uptake zone, the adjustable increasing of side electricity isolated region and side
The direction stacking preparation perpendicular with ridge gain region length direction of benefit/uptake zone edge, side electricity isolated region and side adjustable gain/
Length direction of the uptake zone each parallel to ridge gain region；
Or, the optional position spacing side by side in the side of ridge gain region one forms multistage side electricity isolated region and the adjustable increasing in side
Benefit/uptake zone；Every section of side electricity isolated region and side adjustable gain/uptake zone are along the side perpendicular with ridge gain region length direction
Prepared to stacking, the length direction of every section of side electricity isolated region and side adjustable gain/uptake zone each parallel to ridge gain region.
6. semiconductor mode-locked laser according to claim 1 and 2, it is characterised in that in appointing for the side of ridge gain region two
Meaning position respectively sets one section of side electricity isolated region and side adjustable gain/uptake zone, and every section of side electricity isolated region and side are adjustable
Gain/uptake zone prepares along the direction stacking perpendicular with ridge gain region length direction, and every section of side electricity isolated region and side can
Gain/uptake zone is adjusted each parallel to the length direction of ridge gain region.
7. semiconductor mode-locked laser according to claim 6, it is characterised in that in the side electricity of the side of ridge gain region one
Isolated area and side adjustable gain/uptake zone are symmetrical with the side electricity isolated region of another side and side adjustable gain/uptake zone
Distribution.
8. semiconductor mode-locked laser according to claim 1 and 2, it is characterised in that each in two sides of ridge gain region
Multistage side electricity isolated region and side adjustable gain/uptake zone, every section of side electricity isolated region and side adjustable gain/absorption are set
Area is along the direction stacking preparation perpendicular with ridge gain region length direction, every section of side electricity isolated region and side adjustable gain/suction
Receive length direction of the area each parallel to ridge gain region.
9. semiconductor mode-locked laser according to claim 8, it is characterised in that each section of side of the side of ridge gain region two
Electricity isolated region and side adjustable gain/uptake zone are distributed or specular distribution in multistage complementary symmetrical.
10. semiconductor mode-locked laser according to claim 1 and 2, it is characterised in that the semiconductor mode-locked laser
Semiconductor mode-locked laser include lower waveguide layer, active area and upper ducting layer, the lower waveguide layer, active area and upper ducting layer according to
Secondary setting constitutes light limiting layer central area, and lower separation limiting layer, substrate and bottom electrode are set gradually under the lower waveguide layer,
Separation limiting layer, cap rock, Si02 current isolating layers and Top electrode are set gradually on upper ducting layer.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106329311A (en) * | 2016-11-14 | 2017-01-11 | 中国科学院福建物质结构研究所 | Semiconductor mode-locked laser containing side adjustable gain/absorbing zone |
| CN109831247A (en) * | 2019-01-28 | 2019-05-31 | 钟林晟 | Ultra-compact Modulator efficiency test device and test method based on micro-loop structure |
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2016
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106329311A (en) * | 2016-11-14 | 2017-01-11 | 中国科学院福建物质结构研究所 | Semiconductor mode-locked laser containing side adjustable gain/absorbing zone |
| CN106329311B (en) * | 2016-11-14 | 2021-09-21 | 中国科学院福建物质结构研究所 | Semiconductor mode-locked laser with side-edge adjustable gain/absorption region |
| CN109831247A (en) * | 2019-01-28 | 2019-05-31 | 钟林晟 | Ultra-compact Modulator efficiency test device and test method based on micro-loop structure |
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