CN106058638A - Mode-locked laser for outputting femtosecond pulse - Google Patents
Mode-locked laser for outputting femtosecond pulse Download PDFInfo
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- CN106058638A CN106058638A CN201610384022.1A CN201610384022A CN106058638A CN 106058638 A CN106058638 A CN 106058638A CN 201610384022 A CN201610384022 A CN 201610384022A CN 106058638 A CN106058638 A CN 106058638A
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- femtosecond pulse
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
- H01S5/0657—Mode locking, i.e. generation of pulses at a frequency corresponding to a roundtrip in the cavity
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- General Physics & Mathematics (AREA)
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Abstract
The present invention provides a mode-locked laser for outputting a femtosecond pulse. The mode-locked laser includes a semiconductor saturable absorber, a semiconductor light amplifier, a multi-channel array waveguide grate and a phase delay waveguide array that are sequentially connected through a passive ridge waveguide between two cleavage planes. The mode-locked laser can output the femtosecond pulse without using an external pulse compression technology, and has the advantages of simple manufacture process, compact structure, low cost, and mass production.
Description
Technical field
The invention belongs to field of semiconductor photoelectron technique, particularly relate to a kind of can realize femtosecond pulse output have
Source-passive single-chip integration formula semiconductor mode-locked laser.
Background technology
Since the late 20th century produces, owing to its pulse width is extremely short, (persistent period is positioned at 10 to Femtosecond Optical Pulses-15s
Magnitude), peak power is high and spectral coverage is the widest etc., and excellent characteristics has obtained development at full speed.Such as learn on basis
The section such as ultrafast field of the microcosmic such as physics, chemistry, owing to the change of its kinestate usually occurs in femtosecond yardstick, common macroscopic view
Measurement means cannot be carried out normal test analysis.But, it is existing that the extremely short advantage of femto-second laser pulse width changes this
Shape, completes substantial amounts of experimental work in such as physics, the association area such as chemical and biological, recognizes microcosmic generation for the mankind further
The characteristics of motion on boundary provides strong guarantee.This feature of high peak power then allows femtosecond pulse laser be applied to swash
The fields such as light controlled nuclear fusion, synchronous radiation accelerator and micro-nano retrofit.Spectral range is the most then presented as femtosecond pulse
Directly output with electron beam or other crystal by frequency-doubled effect, create coverage from X-ray to THz wave this
One wide frequency spectrum, can obtain great application in medical treatment, bio-imaging, metering or accurate measurement.And in traditional communication
Field, femtosecond pulse light source can be applicable to following communication speed and is up to time-division and wavelength-division multiplex, the optical clock of Terahertz magnitude
Or in the application such as full light recovery.
At present, the generation of femtosecond pulse mainly has a various structures: dye mode-locking laser instrument, solid mode-locked laser, gain
Optical fiber mode locked laser and semiconductor mode-locked laser.Realize the dye mode-locking laser instrument of femtosecond pulse as the first generation, it is adopted
With dyestuff as gain media into, successfully the mankind are brought femtosecond field.But it is limited to the unstability of dyestuff gain media,
Its duty also presents unstability, and therefore its actual application is only limitted to laboratory, has significant limitation.The second filial generation
Femto-second laser is the solid mode-locked laser with titanium-doped sapphire mode-locked laser as representative, and it can produce and be as short as a few femtosecond amount
The high-peak power femtosecond pulse of level, has waited until to be widely applied in multiple fields.But it is expensive, system is huge, length
The shortcomings such as phase poor stability, power consumption are big, debugging maintenance is complicated, are not suitable for large-scale production and application.Gain fibre mode-locked laser
Device use the optical fiber of doped with rare-earth elements as gain media, together with other ripe optical components miniaturization, low cost,
Further, but it uses the structure of discrete component to arrange to make the output repetition of its laser low long-time stability aspect, and cost is high,
Limit its range of application.
Semiconductor mode-locked laser uses direct band-gap semicondictor material, such as GaAs base, InP-base material system, same
Standard semi-conductor processes integration gain district and saturated absorption district is utilized, it is achieved the output of light pulse on substrate.It has volume little,
Low in energy consumption, good stability, repetition rate are high, be prone to the plurality of advantages such as large-scale production.But traditional semiconductor mode-locked laser
Device is limited to gain-narrowing that mode competition brought and gain region Self-phase modulation and Gain Dispersion effect is brought
Impact, it is achieved femtosecond pulse difficulty, pulse separating phenomenon easily occurs.Therefore, the gain that mode competition is brought how is avoided
The effect that narrows and the Self-phase modulation of gain region and effect of dispersion are the keys that semiconductor mode-locked laser produces femtosecond pulse.
Summary of the invention
(1) to solve the technical problem that
The main object of the present invention is to provide a kind of mode-locked laser, it is not necessary to utilize external pulse compress technique to obtain
Femtosecond pulse exports, have that processing technology is simple, compact conformation, with low cost, be prone to the advantages such as large-scale production.
(2) technical scheme
For reaching above-mentioned purpose, the present invention proposes the mode-locked laser for exporting femtosecond pulse, and it is single-chip integration formula
Semiconductor chip, chip cleavage surface, as the reflection cavity face of femtosecond pulse laser, is led to from left side cleavage surface to right side cleavage surface
Cross passive ridge waveguide and be sequentially connected with quasiconductor saturated absorbing body, semiconductor optical amplifier, multichannel array waveguide optical grating and phase place
Postpone waveguide array, wherein:
After quasiconductor saturated absorbing body is reverse biased, apply forward current, semiconductor light to semiconductor optical amplifier
Amplifier produces gain light under forward current drives, and the segmentation of described gain light is led to by multichannel array waveguide optical grating to each
Road, Phase delay waveguide array is for making the light path between each passage identical, and the gain light of each passage is at right cleavage surface
After reflection, being again introduced into multichannel array waveguide optical grating and carry out closing bundle, the gain light closing each passage after bundle enters quasiconductor
Image intensifer carries out gain again, and the gain light of each passage after gain enters quasiconductor saturated absorbing body, quasiconductor again
Saturated absorbing body is by saturated absorption by pattern strong and weak for absorbing light, and the pattern that light intensity is strong then can be under saturated absorption
There is fixing phase contrast, so make, between the gain light of each passage, there is fixed skew, there is each of fixed skew
The gain light of passage exports from left cleavage surface, thus realizes femtosecond pulse output.
Further, quasiconductor saturated absorbing body is defined as active area, i.e. comprises multiple quantum well layer, and it act as synchronizing manifold
The wavelength of the gain light in road, makes have fixing phase contrast between the gain light of each passage.Quasiconductor saturated absorbing body from lower to
On include successively: waveguide limiting layer, InGaAsP volume under metal negative electrode layer, InP substrate layer, InP bottom breaker, InGaAsP
Sub-well layer, InGaAsP upper waveguide limiting layer, the upper cap rock of InP, InGaAs contact layer and positively charged metal pole layer.
Further, semiconductor optical amplifier is defined as active area, i.e. comprises multiple quantum well layer.Semiconductor optical amplifier under
Include successively to upper: metal negative electrode layer, InP substrate layer, InP bottom breaker, waveguide limiting layer, InGaAsP under InGaAsP
Multiple quantum well layer, InGaAsP upper waveguide limiting layer, the upper cap rock of InP, InGaAs contact layer and positively charged metal pole layer.
Further, multichannel array waveguide optical grating is defined as passive region, does not the most comprise multiple quantum well layer.Its transmission characteristic is
Single channel input (output), multichannel output (input).Multichannel array waveguide optical grating includes multiple input waveguide, each defeated
Enter waveguide to include the most successively: under metal negative electrode layer, InP substrate layer, InP bottom breaker, InGaAsP, waveguide limits
Cap rock on layer, InGaAsP upper waveguide limiting layer and InP.
Further, Phase delay waveguide array includes multiple phase modulation delay line, and it is corresponding with multiple input waveguides, multiple tune
The physical length of phase delay line has been contemplated that waveguide dispersion effect when design, and then is made by the length of design different delayed time line
The optical equivalence chamber length obtaining all passages is consistent, further contemplates processing technology etc. and can introduce random error, can be in its work
Time apply forward current, changed the phase place of the refractive index different passage of fine setting by free carrier effect of dispersion.
Further, the tail end of multiple phase modulation delay lines is in right cleavage surface, and multiple phase modulation delay line be coated with high anti-
Film, so that the gain light of each passage reflects at right cleavage surface.
Further, each phase modulation delay line includes the most successively: slow under metal negative electrode layer, InP substrate layer, InP
Rush waveguide limiting layer under layer, InGaAsP, InGaAsP upper waveguide limiting layer, the upper cap rock of InP, InGaAs contact layer and positively charged metal
Pole layer.
Further, quasiconductor saturated absorbing body, semiconductor optical amplifier, multichannel array waveguide optical grating and Phase delay ripple
Lead array to be connected by passive ridge waveguide.
Further, quasiconductor saturated absorbing body, semiconductor optical amplifier, multichannel array waveguide optical grating and Phase delay ripple
Lead array to be integrated on same substrate by dry etching.
(3) beneficial effect
The mode-locked laser being used for exporting femtosecond pulse of present invention offer has the advantage that
(1) use single semiconductor optical amplifier as the gain media of each passage, mode-locked laser can be significantly reduced
Power consumption and process complexity, it is to avoid because of use semiconductor optical amplifier array for each passage provide gain time because of cooperation
And the hot cross-interference issue between the passage introduced, improve stability during device work；
(2) array waveguide grating is used can to avoid the semiconductor optical amplifier gain narrowing brought because of mode competition
Effect so that each frequency component that femtosecond pulse can be comprised by semiconductor optical amplifier is amplified, and avoids being produced simultaneously
The phenomenon of produced pulse division when raw femtosecond pulse transmits in semiconductor optical amplifier.And mode-locked laser is collected
The phase modulation delay line array become then provides dispersion compensation for each passage, it is ensured that each frequency component has identical light path, from
And it is easily achieved femtosecond pulse without the output warbled；
(3) use single-chip integration formula structure, utilize self-registered technology to reduce the process complexity of element manufacturing, eliminate because adopting
The coupling loss introduced with discrete device, have that pulse recurrence frequency is high, pulse width is narrow, device job stability is high, body
Long-pending little, operating power consumption is low, be prone to the advantages such as batch production.
Accompanying drawing explanation
Fig. 1 is the structural representation of the mode-locked laser for exporting femtosecond pulse that the present invention provides；
Fig. 2 is the material epitaxy structure in embodiment of the present invention middle mold laser active district；
Fig. 3 is the material epitaxy structure of light device passive region in the embodiment of the present invention；
Fig. 4 is longitudinal tangent plane structure chart of mode-locked laser in the embodiment of the present invention.
Detailed description of the invention
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and reference
Accompanying drawing, the present invention is described in more detail.
Refer to the embodiment shown in Fig. 1,2,3,4.The embodiment of the present invention proposes one and works in 1550nm communication wavelength
Near, the design side of the InP-base single-chip integration formula quasiconductor femtosecond pulse mode-locked laser at about 300fs is estimated in pulse output
Case, including quasiconductor saturated absorbing body 1, semiconductor optical amplifier 2,1 × 32 channel array waveguide optical grating 3 and phase modulation delay line 4.
They are all integrated in same InP substrate by standard semiconductor active/passive butt-joint process.
Quasiconductor saturated absorbing body 1 in the present embodiment, its material epitaxy structure is same as semiconductor optical amplifier 2.
Concrete material is configured to InP substrate layer 6, n-InP cushion 7, InGaAsP lower limit layer 8, a multiple quantum well active layer
9, an InGaAsP upper limiting layer 10, a p-InP cap rock 11, a p-InGaAs ohmic contact layer 12, see accompanying drawing 2.Quasiconductor is satisfied
Reverse biased is applied with absorber 1 so that it is work in reverse absorbing state when working.
Semiconductor optical amplifier 2 in the present embodiment, its material epitaxy structure is same as quasiconductor saturated absorbing body 1,
See Fig. 2.Forward current is applied so that it is work on threshold value, for femtosecond pulse laser when semiconductor optical amplifier 2 works
Each passage provide gain, it is ensured that the stability of excitation wavelength.
1 × 32 channel array waveguide optical grating 3 in the present embodiment, its material epitaxy structure is an InP substrate layer 6,
N-InP cushion 7, one InGaAsP lower limit layer 8, an InGaAsP upper limiting layer 10, a p-InP cap rock 11, see Fig. 3.Its
Centre wavelength is suitable with the gain spectral centre wavelength of semiconductor optical amplifier, as being 1550nm in the embodiment of the present invention.Array ripple
The number of active lanes of guide grating is 32, and two interchannel wavelength intervals are set as 50GHz, corresponding 0.4nm.Channel transfer spectrum
1-dB carries a width of 0.06nm or narrower, it is ensured that realize single mode emission.
Phase modulation delay line 4 in the present embodiment, its material epitaxy structure is same as array waveguide grating 3, sees accompanying drawing
3.It is compensated when different wave length transmits in the waveguide owing to effect of dispersion is introduced by the degree of crook of design curved waveguide
Optical path difference so that all wavelengths can arrive saturated absorbing body 1 part simultaneously, it is to avoid warbles.Electrode added by top is then profit
Finely tune, by powering up, the deviation brought due to fabrication error with free carrier effect of dispersion.
In the present embodiment, substrate by standard semi-conductor processes thinning, polish, be deposited with the techniques such as negative electrode and share
Same metal negative electrode 5.Positively charged metal pole 13 is then by selective wet etching technique, by passive region array waveguide grating 3
Positively charged metal pole remove, on passive region phase modulation delay line 4, active area quasiconductor saturated absorbing body 1 and semiconductor optical amplifier 2
Positively charged metal pole retain.
The face, chamber of single-chip integration formula quasiconductor femtosecond pulse mode-locked laser is formed by natural cleavage plane, can be in phase when needing
Delay line one end, position plating high-reflecting film, it is achieved the maximization of common output end power output.
When the present invention works:
Quasiconductor saturated absorbing body 1 is applied reverse biased, after quasiconductor saturated absorbing body 1 is reverse biased, half-and-half
Conductor image intensifer 2 injects forward current so that semiconductor optical amplifier 2 reaches conditions for lasing, produces gain light, gain light
Centre wavelength is positioned near the operation wavelength that device sets, as being near 1550nm in the embodiment of the present invention.
After the gain light that semiconductor optical amplifier 2 produces enters 1 × 32 channel array waveguide optical grating 3,1 × 32 channel array
Waveguide optical grating 3 by gain light split to this 32 passage, in the embodiment of the present invention, 32 channel spacings are 200GHz, adjacency channel it
Between central wavelength difference be that 0.06nm is (due to material homogeneity and the impact of processing technology, each channel center wavelength and interchannel
Every being slightly displaced from).
Each channel gain light of 1 × 32 channel array waveguide optical grating 3 output enters Phase delay waveguide array, Phase delay
Waveguide array has phase modulation delay line 4 the most multiple with passage, and phase modulation delay line 4 is by changing the physics of each passage
Chamber is long, it is achieved the optical mode of each passage has identical light path, the afterbody of the gain optical transport of each passage to phase modulation delay line 4
(the rightest cleavage surface), through the film reflection of being all-trans of afterbody, gain light is back to 1 × 32 channel array waveguide optical grating 3 along light path and enters
Row closes bundle, i.e. 1 × 32 channel array waveguide optical grating 3 Jiang Zhe 32 tunnel gain light multiplexing to same output waveguide, enters semiconductor light
Amplifier 2 amplifies again, enters saturated absorbing body 1 afterwards.
Saturated absorbing body 1 is in saturated absorption state under the effect of reverse biased, utilizes saturated absorbing body distinctive
Saturated absorption characteristic so that this 32 tunnel gain optical wavelength has constant phase contrast, thus realizes femtosecond pulse output.
Particular embodiments described above, has been carried out the purpose of the present invention, technical scheme and beneficial effect the most in detail
Describe in detail bright it should be understood that the foregoing is only the specific embodiment of the present invention, be not limited to the present invention, all
Within the spirit and principles in the present invention, any modification, equivalent substitution and improvement etc. done, should be included in the protection of the present invention
Within the scope of.
Claims (9)
1. the mode-locked laser being used for exporting femtosecond pulse, it is characterised in that include left cleavage surface and right cleavage surface, described
Quasiconductor saturated absorbing body, semiconductor optical amplifier, multichannel array ripple it is sequentially formed with between left cleavage surface and right cleavage surface
Guide grating and Phase delay waveguide array, wherein,
After described quasiconductor saturated absorbing body is reverse biased, apply forward current to described semiconductor optical amplifier, described
Semiconductor optical amplifier produces gain light under forward current drives, and described gain light is divided by described multichannel array waveguide optical grating
Cutting to each passage, described Phase delay waveguide array is used for making the light path between each passage identical, the gain of each passage
After light reflects at right cleavage surface, it is again introduced into multichannel array waveguide optical grating and carries out closing bundle, the increasing of each passage after conjunction bundle
Benefit light enters semiconductor optical amplifier and carries out gain again, and the gain light entrance quasiconductor of each passage after gain is saturated again
Absorber, quasiconductor saturated absorbing body makes have fixed skew between the gain light of each passage, has fixed skew
The gain light of each passage exports from described left cleavage surface, thus realizes femtosecond pulse output.
Mode-locked laser for exporting femtosecond pulse the most according to claim 1, it is characterised in that: described quasiconductor is satisfied
Include the most successively with absorber: under metal negative electrode layer, InP substrate layer, InP bottom breaker, InGaAsP, waveguide limits
Layer, InGaAsP multiple quantum well layer, InGaAsP upper waveguide limiting layer, the upper cap rock of InP, InGaAs contact layer and positively charged metal pole
Layer.
Mode-locked laser for exporting femtosecond pulse the most according to claim 1, it is characterised in that described semiconductor light
Amplifier includes the most successively: metal negative electrode layer, InP substrate layer, InP bottom breaker, under InGaAsP waveguide limit
Layer, InGaAsP multiple quantum well layer, InGaAsP upper waveguide limiting layer, the upper cap rock of InP, InGaAs contact layer and positively charged metal pole
Layer.
Mode-locked laser for exporting femtosecond pulse the most according to claim 1, it is characterised in that described multichannel battle array
Train wave guide grating includes that multiple input waveguide, each input waveguide include the most successively: metal negative electrode layer, InP substrate
Cap rock on waveguide limiting layer, InGaAsP upper waveguide limiting layer and InP under layer, InP bottom breaker, InGaAsP.
Mode-locked laser for exporting femtosecond pulse the most according to claim 4, it is characterised in that described Phase delay
Waveguide array includes multiple phase modulation delay line, and it is corresponding with multiple input waveguides, and multiple phase modulation delay lines have different length,
So that the optical equivalence chamber length of multiple input waveguides is consistent.
Mode-locked laser for exporting femtosecond pulse the most according to claim 5, it is characterised in that the plurality of phase modulation
The tail end of delay line is in right cleavage surface, and multiple phase modulation delay line be coated with high-reflecting film, so that the gain of each passage
Light reflects at right cleavage surface.
Mode-locked laser for exporting femtosecond pulse the most according to claim 5, it is characterised in that each phase modulation time delay
Line includes the most successively: waveguide limiting layer under metal negative electrode layer, InP substrate layer, InP bottom breaker, InGaAsP,
InGaAsP upper waveguide limiting layer, the upper cap rock of InP, InGaAs contact layer and positively charged metal pole layer.
Mode-locked laser for exporting femtosecond pulse the most according to claim 1, it is characterised in that described quasiconductor is satisfied
With absorber, semiconductor optical amplifier, multichannel array waveguide optical grating and Phase delay waveguide array by passive ridge waveguide even
Connect.
Mode-locked laser for exporting femtosecond pulse the most according to claim 1, it is characterised in that described quasiconductor is satisfied
Integrated by dry etching with absorber, semiconductor optical amplifier, multichannel array waveguide optical grating and Phase delay waveguide array
On same substrate.
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Cited By (6)
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| CN108121034A (en) * | 2017-12-22 | 2018-06-05 | 武汉电信器件有限公司 | A kind of optical assembly of integrated SOA and AWG and preparation method thereof |
| WO2020143299A1 (en) * | 2019-01-08 | 2020-07-16 | 惠州学院 | Semiconductor laser accelerator and laser acceleration unit thereof |
| CN112013959A (en) * | 2020-09-08 | 2020-12-01 | 浙江大学 | Fourier transform spectrometer on silicon substrate with high resolution and large measurement range |
| CN112366522A (en) * | 2020-10-27 | 2021-02-12 | 浙江大学 | Design method of mode-locked photon integrated chip of high repetition frequency multi-wavelength ultrashort pulse, product and application |
| CN113659440A (en) * | 2021-09-10 | 2021-11-16 | 湖南汇思光电科技有限公司 | Ultrahigh frequency optical frequency comb quantum dot mode-locked laser and preparation method thereof |
| CN114450861A (en) * | 2019-09-26 | 2022-05-06 | 日本电信电话株式会社 | Light emitter |
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| CN108121034A (en) * | 2017-12-22 | 2018-06-05 | 武汉电信器件有限公司 | A kind of optical assembly of integrated SOA and AWG and preparation method thereof |
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| CN112013959A (en) * | 2020-09-08 | 2020-12-01 | 浙江大学 | Fourier transform spectrometer on silicon substrate with high resolution and large measurement range |
| CN112013959B (en) * | 2020-09-08 | 2021-10-08 | 浙江大学 | Fourier transform spectrometer on silicon substrate with high resolution and large measurement range |
| CN112366522A (en) * | 2020-10-27 | 2021-02-12 | 浙江大学 | Design method of mode-locked photon integrated chip of high repetition frequency multi-wavelength ultrashort pulse, product and application |
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| CN113659440A (en) * | 2021-09-10 | 2021-11-16 | 湖南汇思光电科技有限公司 | Ultrahigh frequency optical frequency comb quantum dot mode-locked laser and preparation method thereof |
| CN113659440B (en) * | 2021-09-10 | 2023-09-22 | 湖南汇思光电科技有限公司 | Ultrahigh-frequency optical frequency comb quantum dot mode-locked laser and preparation method thereof |
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Application publication date: 20161026 |