CN207038528U - Compact frequency converter - Google Patents
Compact frequency converter Download PDFInfo
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- CN207038528U CN207038528U CN201720591698.8U CN201720591698U CN207038528U CN 207038528 U CN207038528 U CN 207038528U CN 201720591698 U CN201720591698 U CN 201720591698U CN 207038528 U CN207038528 U CN 207038528U
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- transistor
- radiator
- insulating sheath
- frequency converter
- screw
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Abstract
The utility model uses a kind of compact frequency converter, including radiator, transistor, radiating press strip, screw, transistor is positioned on radiator, and with radiator horizontal abutment, an insulating sheath is provided between transistor AND gate radiator, transistor is placed in insulating sheath, and is brought into close contact with insulating sheath inwall, transistor AND gate insulating sheath is compressed by the radiating press strip on the radiator, furthermore transistor AND gate insulating sheath is mounted on radiator by screw；Transistor AND gate insulating sheath is compressed by the radiating press strip on radiator, and screw makes both be mounted on radiator, by above-mentioned method to transistor in the installation on radiator, it can ensure that several transistors are installed at radiator, radiator is installed in frequency converter, radiator occupies narrow space in frequency converter, it can make that frequency converter internal structure is compact, compatibility is good, installation is simple, silica gel cloth material in the prior art can be saved down using the insulating sheath, and then reduces manufacturing cost.
Description
Technical field
It the utility model is related to a kind of frequency converter, more particularly to a kind of compact frequency converter.
Background technology
Existing IGBT single tubes are encapsulated using TO-247AC mostly, and igbt chip is welded on copper sheet substrate, emitter stage
Be connected with copper sheet, the gate pole of igbt chip and other pins drawn by copper lead by three pins respectively, be respectively colelctor electrode,
Gate pole, emitter stage.The copper sheet substrate package for being welded on igbt chip is got up to be formed a component by ceramic material.Due to radiating
It is required that it is referred to as the radiating surface of " fin " in exposed used outside as TO-247AC package substrates of copper sheet substrate.Radiating surface has
The colelctor electrode of conductive characteristic and IGBT single tubes has electrical connection.Radiating surface is ceramic material with TO-247AC encapsulation front, and nothing is led
Electrical characteristics.TO-247AC encapsulates the right and left ceramic material, and radiating surface left and right margins are 0.5mm spacing from element the right and left.
TO-247AC package centers are on the upper side to have diameter 3mm circular holes to be used for the radiating surface for installing screw fixed heat sink, circular hole and real estate
There is 2mm spacing；Being used for installation bolt circular hole position the right and left in TO-247AC encapsulation front has neck, there is copper sheet base in neck
Plate has 3mm spacing apart from top surface；Needing the inverter bridge of 3 pairs of IGBT single tubes compositions of radiating will be arranged on same radiator, due to
The substrate and colelctor electrode of IGBT single tubes have electrical connection inversion working condition under, it is necessary to keep each IGBT single tubes between
Electric insulation；IGBT single tubes need insulation of being eager to excel between IGBT single tubes and radiator, general insulating materials on installation radiator
For silica gel cloth.Silica gel is furnished with insulation and thermal conduction characteristic.
Traditional IGBT single tube mounting means has two kinds, and the first installation IGBT single tube mode is that screw is fixed.Cutting
Good silica gel cloth is placed on radiator face, drills out a hole on the screw position of installation IGBT single tubes, fixed screw passes through
IGBT single tubes screw hole and silica gel cloth, IGBT single tubes are fixed on a heat sink；This mounting means shortcoming is：Installation trouble,
It could be fixed due to needing to play 6 screws, IGBT single tubes are formed by 3 pairs at inversion unit；Because every IGBT single tube
It is required for screw to fix, and needs the installation dimension for ensureing IGBT single tubes too large deviation occur in installation process, typically
In the case of its installation dimension controlled by installs fixture；Need to ensure the screw circular hole and dissipate that its silica gel cloth is provided with when mounted
The screw hole alignment of hot device overlaps；If there is situation about being overlapped without alignment, it is possible that installation IGBT single tube screws do not have
Have through the circular hole on silica gel cloth, so as to which screw damages to the insulating barrier at silica gel cloth, in turn result in IGBT single tubes and dissipate
Hot device dielectric strength, which does not reach, to meet the requirements, the situation for notably making frequency converter be damaged in use；Or examined in product
Unqualified situation is detected in survey, then needs to match somebody with somebody in product from new clothes and is chosen, and silica gel cloth is changed；It is more than appearance
Situation, impacting and causing raw materials for production to waste for production efficiency can be made.Because TO-247AC encapsulates limitation IGBT single tubes
There was only 2mm electric clearance between screw circular hole and the radiating surface of real estate, frequency converter is used, then occurred in wet condition
The conductive radiator face of IGBT single tubes and screw through IGBT single tubes, which are formed, climbs electricity, and then IGBT pipes are punctured, and can cause frequency conversion
The use range limitation of device is reduced；Left and right margins between radiating surface and element are 0.5mm electric clearances, adjacent IGBT during installation
Interval can not be too near between single tube, but its installation need to ensure certain electric clearance, due to mounting means problem, it may appear that electrically
Gap, so as to make the problem of structure is not compact occur in frequency converter installation process.
Second of installation IGBT single tubes mode is fixed for radiating press strip.Its mode is placed on radiating for that will cut silica gel cloth
On device face, radiating press strip is pressed in IGBT single tubes front, and the center position of the radiating press strip is screwed press strip and radiator,
Or it is screwed press strip and radiator in the left and right ends opening position of radiating press strip；Second of mounting means can avoid first
The shortcomings that in the mounting means of kind, but can not use this installation close to installation question between can not still solving adjacent tubes
The mode person of solving the problems, such as, can occur the insurmountable problem of this another mounting means again.IGBT in installation process
Single tube is that horizontal direction is affixed on radiator face, and pin needs upward 90 ° of bendings to realize the welding with wiring board, radiating pressure
Certain electric equipment compartment that bar and the pin of upward 90 ° of bendings need to ensure is away from radiating press strip can only be installed backward, then in the neck of front
Electric equipment compartment causes potential safety hazard occurs away from that can reduce between its copper sheet substrate and radiating press strip.
The content of the invention
The utility model is solution the deficiencies in the prior art, there is provided a kind of compact frequency converter, the equipment are led to
Cross insulating sheath and replace whole silica gel cloth to reach the insulation of IGBT single tubes and radiating；Lacking for conventional mounting IGBT single tubes can be avoided
Point, silica gel cloth material is saved, rationally compact, perfect heat-dissipating, compatibility are good, installation is simple, cost is low for the frequency changer.
The utility model uses a kind of compact frequency converter, including radiator, transistor, radiating pressure to achieve the above object
Bar, screw, transistor are positioned on radiator, and with radiator horizontal abutment, it is exhausted to be provided with one between transistor AND gate radiator
Edge sheath, transistor are placed in insulating sheath, and are brought into close contact with insulating sheath inwall, and transistor AND gate insulating sheath is dissipated by this
Radiating press strip on hot device compresses, furthermore transistor AND gate insulating sheath is mounted on radiator by screw.
Above-mentioned compact frequency converter, the transistor AND gate insulating sheath are compressed by the radiating press strip on radiator, furthermore
Both are made to be mounted on radiator by screw；Transistor can be protected in the installation on radiator by above-mentioned method
Demonstrate,prove several transistors to be installed at radiator, then be installed on by radiator in frequency converter, by this mode transistor is installed
In on radiator, its radiator occupies narrow space in frequency converter, furthermore is that frequency converter internal structure can be made compact, compatible
Property it is good, installation is simple, silica gel cloth material in the prior art can be saved down using the insulating sheath, and then reduce manufacturing cost.
The utility model is further arranged to, and single transistor is positioned on radiator, and radiating press strip is located at insulation shield
Set relative to the another side of lateral opening at, radiating press strip one end be located at insulating sheath and transistor top, and with both
Horizontal abutment, furthermore the other end extend to above radiator and bend be in contact with radiator downwards by screw by transistor with
And insulating sheath is fixed on radiator.
Above-mentioned compact frequency converter, the part that the single transistor coordinates with insulating sheath, it is positioned on radiator and leads to
Cross radiating press strip to contact with transistor and radiator, radiating press strip is reached overall fixation with transistor by screw, this is
The first scheme of structure combination of the present utility model, fitment stability is reliable, compact-sized, perfect heat-dissipating, and installs simple.
The utility model is further arranged to, and two transistors for being cased with insulating sheath, two crystalline substances are placed with radiator
Body pipe is placed side by side, and the press strip that radiates is located above transistor, and is bonded with transistor level, furthermore screw is pressed through its radiating
Bar middle-end is mutually fixed with radiator.
Above-mentioned compact frequency converter, the part that described two transistor AND gate insulating sheaths coordinate, it is positioned on radiator and dissipates
Hot pressing bar is placed on transistor, and by screw, middle-end is mutually fixed with radiator at radiating press strip, reaches overall fixation, this is
The alternative plan of structure of the present utility model combination, fitment stability is strong between adjacent transistor, fixed reliable, compact-sized,
Perfect heat-dissipating, and install simple.
The utility model is further arranged to, and the installation for being available for screw to install is provided with the spacing between adjacent transistor
Spacing.
Above-mentioned compact frequency converter, described this are by being set between adjacent transistor in alternative plan of the present utility model
There is screw clipping room away from when two transistors are all fixed on radiator, it is ensured that gap is unsuitable excessive between both positions, excessive
Both can be caused to connect not compact situation.
The utility model is further arranged to, and transistor includes transistor body and three pins, transistor pass through thereon
Transistor body and insulating sheath inwall be fitted close, pin is exposed on the outside of insulating sheath, and three pins are relative to dissipating
Hot device and insulating sheath mating surface, the transistor is IGBT single tubes..
Above-mentioned compact frequency converter, the transistor AND gate insulating sheath inwall are fitted close, and former pin is placed to be straight,
Corresponding bending can be carried out to pin according to installation requirement and installation site, it is ensured that its position reliability installed.
Brief description of the drawings
Fig. 1 is the transistor AND gate radiator schematic view of the mounting position of the utility model specific embodiment 1；
Fig. 2 is the transistor AND gate radiator schematic view of the mounting position of the utility model specific embodiment 2；
Fig. 3 is the utility model insulating sheath structure schematic diagram；
Fig. 4 is the utility model transistor arrangement schematic diagram；
Embodiment
As shown in Fig. 1, Fig. 3, Fig. 4, specific embodiment of the utility model 1 is a kind of close-coupled frequency converter, by radiator
1st, insulating sheath 3, transistor 2, radiating press strip 4, screw 5 form, and insulating sheath 3 is by bottom surface 34, the side group of upper surface 31, four
Into wherein one side is provided with one side opening 33, and a transverse opening 32, lateral opening 33 and transverse direction are provided with upper surface 31
Opening 32 is connected, and transistor 2 is positioned in insulating sheath 3 by lateral opening 33, after transistor 2 combines with insulating sheath 3
It is positioned on radiator 1, furthermore the position transistor 2 of transverse opening 32 has partial denudation to be installed on insulation in outside, radiating press strip 4
Sheath 3 is pressed close at the lateral location to be provided with a screw fixing hole on radiator 1 relative to the another side of lateral opening 33,
Radiating press strip 4 tighten up a screw fixing hole same axis at be provided with a screw installing hole, radiating press strip 4 one end is located at insulating sheath
3 and the top of transistor 1, and extend to the top of radiator 1 and curved with insulating sheath 3 and the horizontal abutment of transistor 1, the other end
Song is in contact with radiator 1 vertically downward, furthermore screw 5 is tightened up a screw through the screw installing hole on radiating press strip 4 with radiator 1
Fixing hole is engaged, and transistor 2 and insulating sheath 3 is fixed on radiator 1.
As shown in figs 2-4, specific embodiment of the utility model 2 is a kind of close-coupled frequency converter, by radiator 1, absolutely
Edge sheath 3, transistor 2, radiating press strip 4, screw 5 are formed, and insulating sheath 3 is made up of bottom surface 34, the side of upper surface 31, four,
Wherein one side is provided with one side opening 33, a transverse opening 32 is provided with upper surface 31, lateral opening 33 is with laterally opening
Mouth 32 is connected, and transistor 2 is positioned in insulating sheath 3 by lateral opening 33, and transistor 2 is put after being combined with insulating sheath 3
Be placed on radiator 1, furthermore the position transistor 2 of transverse opening 32 have partial denudation on outside, radiator 1 relative to two phases
A screw fixing hole is provided between adjacent transistor 2, the radiating middle-end opening position of press strip 4 is provided with a screw fixing hole, and spiral shell
Silk fixing hole is with screw installing hole on same axis；Two transistors for being cased with insulating sheath 32 are placed with radiator 1,
Two transistors 2 are placed side by side, and the press strip 4 that radiates be located above transistor 2, and with the horizontal abutment of transistor 2, furthermore screw 5
Fixed through its middle-end of press strip 4 that radiates with the phase of radiator 1.
According to above-described embodiment 1-2, the utility model transistor 2 is made up of transistor body 22 and three pins 21, brilliant
Body pipe 2 is fitted close by transistor body 21 thereon and the inwall of insulating sheath 3, and pin 21 is exposed to the outside of insulating sheath 3,
And three pins 21 are relative to radiator 1 and the mating surface of insulating sheath 3, and transistor 2 uses IGBT single tubes.
Claims (6)
1. a kind of compact frequency converter, including radiator, transistor, radiating press strip, screw, it is characterised in that：The transistor
Be positioned on radiator, and with radiator horizontal abutment, be provided with an insulating sheath between transistor AND gate radiator, transistor is put
In in insulating sheath, and it is brought into close contact with insulating sheath inwall, transistor AND gate insulating sheath passes through the radiating pressure on the radiator
Bar compresses, furthermore transistor AND gate insulating sheath is mounted on radiator by screw.
2. compact frequency converter according to claim 1, it is characterised in that：The insulating sheath includes bottom surface, upper surface, four
Individual side, wherein one side are provided with one side opening, and a transverse opening, lateral opening and transverse opening are provided with upper surface
Connect, transistor is positioned in insulating sheath by lateral opening, and radiator is positioned over after the combination of transistor AND gate insulating sheath
On, furthermore transverse opening opening position transistor has partial denudation in outside.
3. compact frequency converter according to claim 1 or claim 2, it is characterised in that：Single transistor is positioned on radiator, is dissipated
Hot pressing bar be located at the insulating sheath relative to the another side of lateral opening at, radiating press strip one end is located at insulating sheath and crystalline substance
Above body pipe, and with both horizontal abutments, furthermore the other end is extended to above radiator and bent and is in contact with radiator downwards
Transistor and insulating sheath are fixed on radiator by screw.
4. compact frequency converter according to claim 1 or claim 2, it is characterised in that：Two are placed with the radiator to be cased with
The transistor of insulating sheath, two transistors are placed side by side, and the press strip that radiates is located above transistor, and are pasted with transistor level
Close, furthermore screw is mutually fixed through its press strip middle-end that radiates with radiator.
5. compact frequency converter according to claim 4, it is characterised in that：Being provided with spacing between adjacent transistor can
For screw installation clipping room away from.
6. compact frequency converter according to claim 1 or claim 2, it is characterised in that：The transistor include transistor body and
Three pins, transistor are fitted close by transistor body thereon and insulating sheath inwall, and pin is exposed to insulating sheath
Outside, and three pins, relative to radiator and insulating sheath mating surface, the transistor is IGBT single tubes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720591698.8U CN207038528U (en) | 2017-05-25 | 2017-05-25 | Compact frequency converter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720591698.8U CN207038528U (en) | 2017-05-25 | 2017-05-25 | Compact frequency converter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207038528U true CN207038528U (en) | 2018-02-23 |
Family
ID=61470071
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720591698.8U Active CN207038528U (en) | 2017-05-25 | 2017-05-25 | Compact frequency converter |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207038528U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109195328A (en) * | 2018-08-30 | 2019-01-11 | 苏州汇川技术有限公司 | Semiconductor element assembly technology, power module and power electronic equipment |
| CN111834311A (en) * | 2019-04-15 | 2020-10-27 | 大众汽车有限公司 | Semiconductor assembly |
| CN115579338A (en) * | 2022-12-06 | 2023-01-06 | 成都复锦功率半导体技术发展有限公司 | Heat dissipation structure of high-voltage plug-in MOS tube and installation method thereof |
-
2017
- 2017-05-25 CN CN201720591698.8U patent/CN207038528U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109195328A (en) * | 2018-08-30 | 2019-01-11 | 苏州汇川技术有限公司 | Semiconductor element assembly technology, power module and power electronic equipment |
| CN111834311A (en) * | 2019-04-15 | 2020-10-27 | 大众汽车有限公司 | Semiconductor assembly |
| CN115579338A (en) * | 2022-12-06 | 2023-01-06 | 成都复锦功率半导体技术发展有限公司 | Heat dissipation structure of high-voltage plug-in MOS tube and installation method thereof |
| CN115579338B (en) * | 2022-12-06 | 2023-03-10 | 成都复锦功率半导体技术发展有限公司 | Heat dissipation structure of high-voltage plug-in MOS tube and installation method thereof |
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