CN206956210U - 一种单晶炉开式直接冷却系统 - Google Patents
一种单晶炉开式直接冷却系统 Download PDFInfo
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- CN206956210U CN206956210U CN201720927704.2U CN201720927704U CN206956210U CN 206956210 U CN206956210 U CN 206956210U CN 201720927704 U CN201720927704 U CN 201720927704U CN 206956210 U CN206956210 U CN 206956210U
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- 238000001816 cooling Methods 0.000 title claims abstract description 52
- 239000013078 crystal Substances 0.000 title claims abstract description 39
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 76
- 239000002283 diesel fuel Substances 0.000 claims abstract description 9
- JEGUKCSWCFPDGT-UHFFFAOYSA-N h2o hydrate Chemical compound O.O JEGUKCSWCFPDGT-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000001514 detection method Methods 0.000 claims description 4
- 238000012544 monitoring process Methods 0.000 claims description 4
- 230000000694 effects Effects 0.000 claims description 3
- 230000005520 electrodynamics Effects 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 230000003020 moisturizing effect Effects 0.000 abstract description 3
- 238000012423 maintenance Methods 0.000 abstract 1
- 239000000498 cooling water Substances 0.000 description 10
- 230000008901 benefit Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 238000010276 construction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000008400 supply water Substances 0.000 description 2
- 230000036760 body temperature Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000003134 recirculating effect Effects 0.000 description 1
- 230000005070 ripening Effects 0.000 description 1
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CN201720927704.2U CN206956210U (zh) | 2017-07-28 | 2017-07-28 | 一种单晶炉开式直接冷却系统 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108796608A (zh) * | 2018-07-10 | 2018-11-13 | 山西中聚晶科半导体有限公司 | 一种蓝宝石单晶炉冷却装置 |
CN114111353A (zh) * | 2021-11-29 | 2022-03-01 | 江苏鸿凌达科技有限公司 | 一种动态调整降低能耗的内循环冷却水系统 |
CN116732616A (zh) * | 2023-06-16 | 2023-09-12 | 通威微电子有限公司 | 碳化硅长晶炉循环水冷却系统及其控制方法 |
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2017
- 2017-07-28 CN CN201720927704.2U patent/CN206956210U/zh active Active
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108796608A (zh) * | 2018-07-10 | 2018-11-13 | 山西中聚晶科半导体有限公司 | 一种蓝宝石单晶炉冷却装置 |
CN114111353A (zh) * | 2021-11-29 | 2022-03-01 | 江苏鸿凌达科技有限公司 | 一种动态调整降低能耗的内循环冷却水系统 |
CN116732616A (zh) * | 2023-06-16 | 2023-09-12 | 通威微电子有限公司 | 碳化硅长晶炉循环水冷却系统及其控制方法 |
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GR01 | Patent grant | ||
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Effective date of registration: 20190129 Address after: 610041 Tianhui Road, Chengdu High-tech Zone, Sichuan Province, No. 360, 18 Blocks 1, Unit 19, Layer 14 Co-patentee after: Cui Yongxiang Patentee after: CHINA CONSTRUCTION KIDE ENGINEERING CORPORATION CO.,LTD. Address before: 610041 Tianhui Road, Chengdu High-tech Zone, Sichuan Province, No. 360, 18 Blocks 1, Unit 19, Layer 14 Patentee before: CHINA CONSTRUCTION KIDE ENGINEERING CORPORATION CO.,LTD. |
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CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: No. 14, Floor 19, Unit 1, Building 18, No. 360, Tianhui Road, High-tech Zone, Chengdu, Sichuan, 610000 Patentee after: Kaide Electronic Engineering Design Co.,Ltd. Patentee after: Cui Yongxiang Address before: 610041 Tianhui Road, Chengdu High-tech Zone, Sichuan Province, No. 360, 18 Blocks 1, Unit 19, Layer 14 Patentee before: CHINA CONSTRUCTION KIDE ENGINEERING CORPORATION CO.,LTD. Patentee before: Cui Yongxiang |