CN206783817U - A kind of bleeding point pipe-line system of single crystal growing furnace four - Google Patents
A kind of bleeding point pipe-line system of single crystal growing furnace four Download PDFInfo
- Publication number
- CN206783817U CN206783817U CN201720398865.7U CN201720398865U CN206783817U CN 206783817 U CN206783817 U CN 206783817U CN 201720398865 U CN201720398865 U CN 201720398865U CN 206783817 U CN206783817 U CN 206783817U
- Authority
- CN
- China
- Prior art keywords
- branch road
- bleeding point
- suction branch
- pipeline
- bleeding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000000740 bleeding effect Effects 0.000 title claims abstract description 63
- 239000013078 crystal Substances 0.000 title claims abstract description 17
- 238000005086 pumping Methods 0.000 claims abstract description 23
- 238000003032 molecular docking Methods 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 10
- 238000011112 process operation Methods 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 235000013555 soy sauce Nutrition 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 235000013305 food Nutrition 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000004936 stimulating effect Effects 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model provides a kind of bleeding point pipe-line system of single crystal growing furnace four, including pumping main pipeline, the first suction branch road, the second suction branch road, the 3rd suction branch road, the 4th suction branch road, the first three-way pipeline, the second three-way pipeline, vacuum valve, vavuum pump, lower furnace chamber, bleeding point A, bleeding point B, bleeding point C and bleeding point D are evenly distributed with the lower furnace chamber side wall, vacuum valve is installed on the pumping main pipeline, the vavuum pump is arranged on pumping main pipeline end, and the vacuum valve is used for the control of vavuum pump.A kind of four bleeding points pipe-line system provided by the utility model, its four bleeding points are located at lower furnace chamber side wall, symmetrical, it is intended to ensure gas stream in the stove and thermo parameters method symmetrically, to improve process operation environment, improve crystal bar quality.
Description
Technical field
It the utility model is related to the technical field of monocrystalline silicon production, and in particular to a kind of bleeding point pipeline system of single crystal growing furnace four
System.
Background technology
The principle of vertical pulling method monocrystalline silicon growing, inert gas (argon gas) is filled with vacuum chamber, polysilicon block is put
After entering silica crucible, it is put into the lump in the graphite field of vacuum chamber, by way of graphite resistance heating, by polysilicon block
Fusing, in specific warm area, drive seed crystal to move by crystal transmission mechanism, drive liquation to move by crucible transmission mechanism,
The solid-liquid interface of crystal is formed, and produces the temperature field of a suitable crystal growth, realization grows into dislocation-free monocrystalline
Silicon rod.In technical process, in pipe end vavuum pump, constantly pumping is taken away in stove and waved while filling with inert gas (argon gas)
Stimulating food and latent heat, maintain furnace pressure and equalized temperature.
Single crystal growing furnace pump-line in industry at present, two bleeding points are used mostly, it is located at the sidepiece or stove of lower furnace chamber
Bottom, and with the horizontal development of industry, furnace chamber size is increasing, and black soy sauce port configurations make air flow method and temperature in furnace chamber
Field distribution is uneven, and the thermograde in stove is also asymmetric, in two positions away from bleeding point usually as the poly- of volatile matter
Collect point, have a strong impact on silicon rod quality.
Utility model content
In view of this, main purpose of the present utility model is to provide a kind of bleeding point pipe-line system of single crystal growing furnace four.
The technical solution adopted in the utility model is:
A kind of bleeding point pipe-line system of single crystal growing furnace four, including pumping main pipeline, the first suction branch road, the second suction branch
Road, the 3rd suction branch road, the 4th suction branch road, the first three-way pipeline, the second three-way pipeline, vacuum valve, vavuum pump, lower stove
Room, bleeding point A, bleeding point B, bleeding point C and bleeding point D are evenly distributed with the lower furnace chamber side wall, the bleeding point A, is taken out
Gas port B, bleeding point C and bleeding point D respectively with the first suction branch road, the second suction branch road, the 3rd suction branch road and
Any one docking in four suction branch roads, passes through the second three-way pipe between the first suction branch road and the 4th suction branch road
Road connects, and second three-way pipeline is connected to pumping main pipeline, and the second suction branch road and the 3rd suction branch road pass through
First three-way pipeline connects, and first three-way pipeline is connected to pumping main pipeline, and vacuum valve is provided with the pumping main pipeline,
The vavuum pump is arranged on pumping main pipeline end, and the vacuum valve is used for the control of vavuum pump.
Preferably, the bleeding point A, bleeding point B, bleeding point C and bleeding point D take out with the first suction branch road, second
Between gas branch pipe road, the 3rd suction branch road and the 4th suction branch road, the first suction branch road, the 4th suction branch road and
Junction between two three-way pipelines and between the second suction branch road, the 3rd suction branch road and the first three-way pipeline is equal
It is provided with sealing ring.
A kind of four bleeding points pipe-line system provided by the utility model, its four bleeding points are located at lower furnace chamber side wall, symmetrically
Distribution, it is intended to ensure gas stream in the stove and thermo parameters method symmetrically, to improve process operation environment, improve crystal bar quality.
Brief description of the drawings
Fig. 1 is front view of the present utility model;
Fig. 2 is top view of the present utility model;
Fig. 3 is side view of the present utility model;
Wherein, the mark of all parts and title are as follows:
Main pipeline 1 is evacuated, the first suction branch road 21, the second suction branch road 22, the 3rd suction branch road 23, the 4th takes out
Gas branch pipe road 24, the first three-way pipeline 31, the second three-way pipeline 32, vacuum valve 4, vavuum pump 5, lower furnace chamber 6.
Embodiment
The utility model is described in detail below in conjunction with accompanying drawing and specific embodiment, herein signal of the present utility model
Property embodiment and explanation be used for explaining the utility model, but be not intended as to restriction of the present utility model.
Reference picture 1 and Fig. 3, the utility model discloses a kind of bleeding point pipe-line system of single crystal growing furnace four, including pumping supervisor
Road 1, the first suction branch road 21, the second suction branch road 22, the 3rd suction branch road 23, the 4th suction branch road 24, first
Three-way pipeline 31, the second three-way pipeline 32, vacuum valve 4, vavuum pump 5, lower furnace chamber 6, it is evenly distributed with the lower side wall of furnace chamber 6
Bleeding point A, bleeding point B, bleeding point C and bleeding point D, the bleeding point A, bleeding point B, bleeding point C and bleeding point D symmetrically divide
Cloth, it is intended to ensure gas stream in the stove and thermo parameters method symmetrically, to improve process operation environment, wherein, the bleeding point
A, bleeding point B, bleeding point C and bleeding point D are evacuated branch with the first suction branch road 21, the second suction branch road the 22, the 3rd respectively
23 and the 4th suction branch road of pipeline, a 24 any one docking, as corresponding first suction branch road 21, second pumpings of bleeding point A
Branch pipe(tube) 22, the 3rd suction branch road 23 and the 4th suction branch road 24 which, or corresponding first suction branch roads of bleeding point B
21st, the second suction branch road 22, the 3rd suction branch road 23 and the 4th suction branch road 24 which, or bleeding point C corresponding the
One suction branch road 21, the second suction branch road 22, the 3rd suction branch road 23 and the 4th suction branch road 24 which, or
Bleeding point D corresponding first suction branch road 21, the second suction branch road 22, the 3rd suction branch road 23 and the 4th suction branch road
24 which, the utility model is not limited, and passes through between the first suction branch road 21 and the 4th suction branch road 24
Two three-way pipelines 32 connect, and second three-way pipeline 32 is connected to pumping main pipeline 1, the second suction branch road 22 and the 3rd
Suction branch road 23 is connected by the first three-way pipeline 31, and first three-way pipeline 31 is connected to pumping main pipeline 1, described to take out
Vacuum valve 4 is installed, the vavuum pump 5 is arranged on pumping main pipeline 1 end, and the vacuum valve 4 is used for true on gas main pipeline 1
The control of empty pump 5.
In order to reach the Optimality of process environments, in the bleeding point A, bleeding point B, bleeding point C and bleeding point D and first
Between suction branch road 21, the second suction branch road 22, the 3rd suction branch road 23 and the 4th suction branch road 24, first pumping
Between branch pipe(tube) 21, the 4th suction branch road 24 and the second three-way pipeline 22 and second suction branch road the 22, the 3rd pumping branch
Junction between the three-way pipeline 31 of pipeline 23 and first is provided with sealing ring.
The utility model is set using the equally distributed bleeding point of symmetrical structure, while uses vavuum pump 5, can be effective
Solving traditional black soy sauce port configurations makes air flow method in furnace chamber and the uneven phenomenon of thermo parameters method, improves technique ring
Border, be advantageous to improve the quality of crystal bar production.
The technical scheme disclosed in the utility model embodiment is described in detail above, it is used herein specifically
Embodiment is set forth to the principle and embodiment of the utility model embodiment, and the explanation of above example is only applicable to
Help understands the principle of the utility model embodiment;Meanwhile for those of ordinary skill in the art, it is real according to the utility model
Example is applied, the there will be changes in embodiment and application, in summary, this specification content should not be understood
For to limitation of the present utility model.
Claims (2)
1. a kind of bleeding point pipe-line system of single crystal growing furnace four, it is characterised in that including pumping main pipeline, the first suction branch road, the
Two suction branch roads, the 3rd suction branch road, the 4th suction branch road, the first three-way pipeline, the second three-way pipeline, vacuum valve,
Vavuum pump, lower furnace chamber, bleeding point A, bleeding point B, bleeding point C and bleeding point D are evenly distributed with the lower furnace chamber side wall, it is described
Bleeding point A, bleeding point B, bleeding point C and bleeding point D are evacuated with the first suction branch road, the second suction branch road, the 3rd respectively
Any one docking of branch pipe(tube) and the 4th suction branch road, passes through between the first suction branch road and the 4th suction branch road
Second three-way pipeline connects, and second three-way pipeline is connected to pumping main pipeline, the second suction branch road and the 3rd pumping
Branch pipe(tube) is connected by the first three-way pipeline, and first three-way pipeline is connected to pumping main pipeline, pacifies on the pumping main pipeline
Equipped with vacuum valve, the vavuum pump is arranged on pumping main pipeline end, and the vacuum valve is used for the control of vavuum pump.
2. the bleeding point pipe-line system of single crystal growing furnace four according to claim 1, it is characterised in that the bleeding point A, bleeding point
B, bleeding point C and bleeding point D and the first suction branch road, the second suction branch road, the 3rd suction branch road and the 4th pumping branch
Between pipeline, between the first suction branch road, the 4th suction branch road and the second three-way pipeline and the second suction branch road,
Junction between three suction branch roads and the first three-way pipeline is provided with sealing ring.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201720398865.7U CN206783817U (en) | 2017-04-17 | 2017-04-17 | A kind of bleeding point pipe-line system of single crystal growing furnace four |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201720398865.7U CN206783817U (en) | 2017-04-17 | 2017-04-17 | A kind of bleeding point pipe-line system of single crystal growing furnace four |
Publications (1)
Publication Number | Publication Date |
---|---|
CN206783817U true CN206783817U (en) | 2017-12-22 |
Family
ID=60708379
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201720398865.7U Expired - Fee Related CN206783817U (en) | 2017-04-17 | 2017-04-17 | A kind of bleeding point pipe-line system of single crystal growing furnace four |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN206783817U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108425846A (en) * | 2018-04-13 | 2018-08-21 | 天津中环领先材料技术有限公司 | A kind of device and method for improving area and melting vacuum pump utilization rate |
-
2017
- 2017-04-17 CN CN201720398865.7U patent/CN206783817U/en not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108425846A (en) * | 2018-04-13 | 2018-08-21 | 天津中环领先材料技术有限公司 | A kind of device and method for improving area and melting vacuum pump utilization rate |
CN108425846B (en) * | 2018-04-13 | 2023-09-05 | 天津中环领先材料技术有限公司 | Device and method for improving utilization rate of zone-melting vacuum pump |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20100307403A1 (en) | (110) dislocation-free monocrystalline silicon and its preparation and the graphite heat system used | |
CN206783817U (en) | A kind of bleeding point pipe-line system of single crystal growing furnace four | |
CN103966668A (en) | Growth method for controlling diameter of rod-like sapphire crystal based on protective atmosphere | |
CN206015134U (en) | A kind of Czochralski method mono-crystal furnace discharge duct cleaning device | |
CN207451919U (en) | A kind of attachment device of Muffle furnace and feeder sleeve in liquid crystal substrate glass production | |
CN204097596U (en) | The thermometer hole self-cleaning device of silicon carbide monocrystal growth stove | |
CN206927963U (en) | Crucible apparatus for baking | |
CN104962995A (en) | Device and method for growing nitride monocrystal | |
CN208455111U (en) | A kind of four bleeding point pipe-line system of polycrystalline furnace | |
CN204417641U (en) | The water cooling plant of controllable SiC crystal growth gradient and crystal growing furnace | |
CN206244922U (en) | The device of temperature survey accuracy during a kind of raising silicon carbide monocrystal growth | |
CN207567377U (en) | monocrystalline silicon feeding device | |
CN206562482U (en) | A kind of classification closed-loop control cooling device of sapphire crystallization furnace | |
CN105506730B (en) | A kind of main vacuum line structure of single crystal growing furnace | |
CN203923452U (en) | The growth apparatus of the bar-shaped sapphire crystal of a kind of guided mode method | |
CN206562474U (en) | A kind of sapphire crystallization furnace seed crystal cooling is with changing system | |
CN202072806U (en) | Vacuum system of single crystal furnace | |
CN112779601B (en) | Growth method of heavily arsenic-doped extremely-low-resistance silicon single crystal | |
CN203923441U (en) | The single crystal growing furnace of built-in gas barrier | |
CN207646175U (en) | A kind of brewing cellar line | |
CN207515219U (en) | A kind of low-temperature negative-pressure heater | |
CN206997748U (en) | One kind supercharging rises liquid foundry furnace | |
CN205258656U (en) | Single crystal growing furnace cooler pan | |
CN207721122U (en) | A kind of fermentation of black tea pond | |
CN101900467A (en) | Multi-gathering pipe type large horizontal heat sink design |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20171222 |