CN206758471U - A kind of perovskite solar cell - Google Patents

A kind of perovskite solar cell Download PDF

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Publication number
CN206758471U
CN206758471U CN201720649160.8U CN201720649160U CN206758471U CN 206758471 U CN206758471 U CN 206758471U CN 201720649160 U CN201720649160 U CN 201720649160U CN 206758471 U CN206758471 U CN 206758471U
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CN
China
Prior art keywords
layer
electron transfer
solar cell
transfer layer
thickness
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Expired - Fee Related
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CN201720649160.8U
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Chinese (zh)
Inventor
董欢
施雨
王冰
唐立丹
齐锦刚
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Liaoning University of Technology
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Liaoning University of Technology
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Priority to CN201720649160.8U priority Critical patent/CN206758471U/en
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Abstract

The utility model discloses a kind of perovskite solar cell.Including：Transparent conducting glass substrate；Electron transfer layer, it is arranged on the top of the transparent conducting glass substrate；And perovskite light absorbing layer, it is arranged on the top of the electron transfer layer；Hole transmission layer, it is arranged on the top of the perovskite light absorbing layer；Electrode layer, it is arranged on the top of the hole transmission layer；Wherein, the electron transfer layer includes the alumina layer 121 and zinc oxide film 122 that multilayer overlaps, and in the electron transfer layer, the thickness of zinc oxide film increases successively from the bottom to top, and the thickness of alumina layer is sequentially reduced from the bottom to top.The beneficial effects of the utility model are：In the electron transfer layer, the concentration in gradient change of Al elements, makes electron transfer layer have good photoelectric properties, has good electric conductivity, higher electronics is collected and transmittability, film has very high light transmittance, improves perovskite solar cell photoelectric conversion efficiency.

Description

A kind of perovskite solar cell
Technical field
A kind of solar cell is the utility model is related to, more particularly to a kind of perovskite solar cell.
Background technology
With the development of global economy, energy resource consumption is more and more, wherein this kind of non-renewable money of image-stone oil, coal resource Source gradually decreases, and energy problem will can turn into a significant problem from now on.Solar energy is renewable resource, inexhaustible use It is inexhaustible, therefore the development of solar cell has great importance.Solar cell in the market now is with crystal silicon solar Based on battery, its photoelectric transformation efficiency is low, prepares cost height and preparation process is big for environment pollution.
Perovskite light absorbing material CH3NH3PbX (Br, I, Cl) is because having low exciton bind energy, high carrier mobility Rate and long carrier lifetime, effective generation electron-hole after light is absorbed, solar cell is widely used in and is inhaled as light Layer is received, its perovskite solar cell can obtain higher photoelectric transformation efficiency.
At present, most of perovskite solar cells are all with TiO2For electron transfer layer, but TiO2And nonideal hole Barrier layer, TiO2There is optically and electrically defect.In the continuous excavation of people, it is found that ZnO is can to replace electric transmission material Material, with TiO2Compare, ZnO has higher electron transport ability, and can accelerate electric transmission reduces recombination rate.But ZnO is Electron transfer layer, the ability for collecting electronics are poor.
Utility model content
The purpose of this utility model is to provide a kind of perovskite solar cell, and it has very high light transmittance, can Improve the photoelectric transformation efficiency of perovskite solar cell.
To achieve the above object, the utility model adopts the following technical scheme that, including：
Transparent conducting glass substrate；
Electron transfer layer, it is arranged on the top of the transparent conducting glass substrate；And
Perovskite light absorbing layer, it is arranged on the top of the electron transfer layer；
Hole transmission layer, it is arranged on the top of the perovskite light absorbing layer；
Electrode layer, it is arranged on the top of the hole transmission layer；
Wherein, the electron transfer layer includes the alumina layer and zinc oxide film that multilayer overlaps, in the electron transfer layer In, the thickness of zinc oxide film increases successively from the bottom to top, and the thickness of alumina layer is sequentially reduced from the bottom to top.
Preferably, the transparent conducting glass substrate is made up of FTO electro-conductive glass, and thickness is 2~5mm.
Preferably, the change in concentration gradient of aluminium element is 0.68~0.73%/nm in described electron transfer layer.
Preferably, the thickness of the electron transfer layer is 80~120nm.
Preferably, the perovskite light absorbing layer is by CH3NH3PI3It is made, thickness is 200~300nm.
Preferably, the hole transmission layer is by P3HT is made, and thickness is 80~120nm.
Preferably, the electrode layer is made up of graphite, and thickness is 100~150nm.
Preferably, it is provided with basalis in the lower surface of the electron transfer layer.
It is with new beneficial effect：In the electron transfer layer, in the electron transfer layer, the thickness of zinc oxide film Degree increases successively from the bottom to top, and the thickness of alumina layer is sequentially reduced from the bottom to top, the concentration in gradient change of Al elements, makes electricity Sub- transport layer has good photoelectric properties, has good electric conductivity, higher electronics is collected and transmittability, film tool There is very high light transmittance, improve perovskite solar cell photoelectric conversion efficiency.
Brief description of the drawings
Fig. 1 is a kind of schematic diagram of perovskite solar cell of the utility model；
Fig. 2 is the schematic diagram of electron transfer layer in the utility model.
Embodiment
Utility model is described in further detail below in conjunction with the accompanying drawings, to make those skilled in the art with reference to specification Word can be implemented according to this.
It should be appreciated that such as " having ", "comprising" and " comprising " term used herein are not precluded from one or more The presence or addition of individual other elements or its combination.
As shown in Figure 1-2, a kind of way of realization of the present utility model, to achieve the above object, this is practical using as follows Technical scheme, including：
Transparent conducting glass substrate 110, rectangle tabular structure, for support electron transfer layer 120；As a kind of excellent Choosing, the transparent conducting glass substrate 110 are made up of FTO electro-conductive glass.As further preferred, the transparent conducting glass base The thickness at bottom 110 is 2~5mm.
The rectangular plate structure of electron transfer layer 120, electron transfer layer 120 are arranged on the transparent conducting glass substrate Top.Include the overlapping alumina layer 121 and zinc oxide film 122 of multilayer in the electron transfer layer 120, passed in the electronics In defeated layer 120, the thickness of zinc oxide film 122 increases successively from the bottom to top, and the thickness of alumina layer 121 subtracts successively from the bottom to top It is small.As a preferred embodiment, the thickness of the electron transfer layer 120 is 80~120nm.As further preferred, in described electricity The change in concentration gradient of aluminium element is 0.68~0.73%/nm in sub- transport layer.
The rectangular plate structure of perovskite light absorbing layer 130, perovskite light absorbing layer 130 are arranged on the electric transmission The top of layer 120.As a preferred embodiment, the perovskite light absorbing layer 130 is by CH3NH3PI3It is made.As further preferred, The thickness of perovskite light absorbing layer 130 is 200~300nm.
The rectangular plate structure of hole transmission layer 140, hole transmission layer 140 are arranged on the perovskite light absorbing layer Top.As a preferred embodiment, the hole transmission layer 140 is by P3HT is made.As further preferred, hole transmission layer 140 Thickness is 80~120nm.
The rectangular plate structure of electrode layer 150, electrode layer 150 are arranged on the top of the hole transmission layer.As one Kind is preferred, and the electrode layer 150 is made up of graphite.As further preferred, the thickness of electrode layer 150 is 100~150nm.
In use, in electron transfer layer 120, the thickness of zinc oxide film 122 increases successively from the bottom to top, oxidation The thickness of aluminium lamination 121 is sequentially reduced from the bottom to top, changes the concentration in gradient of Al elements, electron transfer layer is had well Photoelectric properties, there is good electric conductivity, the collection of higher electronics and transmittability, film to have very high light transmittance, carry High perovskite solar cell photoelectric conversion efficiency.
In another embodiment, the transparent conducting glass substrate 110 is made up of FTO electro-conductive glass, thickness be 2~ 5mm。
In another embodiment, in described electron transfer layer 120 the change in concentration gradient of aluminium element for 0.68~ 0.73%/nm.
In another embodiment, the thickness of the electron transfer layer 120 is 80~120nm.
In another embodiment, the perovskite light absorbing layer 130 is by CH3NH3PI3Be made, thickness be 200~ 300nm。
In another embodiment, the hole transmission layer 140 is by P3HT is made, and thickness is 80~120nm.
In another embodiment, the electrode layer 150 is made up of graphite, and thickness is 100~150nm.
In another embodiment, it is provided with basalis 123 in the lower surface of the electron transfer layer 120.As a kind of excellent Choosing, is contacted, the upper surface of the electron transfer layer 120 is zinc oxide film 122 in the basalis 123 with alumina layer 121.
A kind of perovskite solar cell 1 of the utility model as described above, in the electron transfer layer 120, zinc oxide The thickness of layer 122 increases successively from the bottom to top, and the thickness of alumina layer 121 is sequentially reduced from the bottom to top, and the concentration of Al elements is in Graded, make electron transfer layer that there are good photoelectric properties, there is good electric conductivity, higher electronics to collect and pass Movement Capabilities, film have very high light transmittance, improve perovskite solar cell photoelectric conversion efficiency.
Although embodiment of the present utility model is disclosed as above, it is not restricted in specification and embodiment Listed utilization, it can be applied to various suitable fields of the present utility model completely, for those skilled in the art, Other modification is easily achieved, therefore under the universal limited without departing substantially from claim and equivalency range, this reality Specific details is not limited to new and shown here as the legend with description.

Claims (8)

  1. A kind of 1. perovskite solar cell, it is characterised in that including：
    Transparent conducting glass substrate；
    Electron transfer layer, it is arranged on the top of the transparent conducting glass substrate；And
    Perovskite light absorbing layer, it is arranged on the top of the electron transfer layer；
    Hole transmission layer, it is arranged on the top of the perovskite light absorbing layer；
    Electrode layer, it is arranged on the top of the hole transmission layer；
    Wherein, the electron transfer layer includes the alumina layer and zinc oxide film that multilayer overlaps, in the electron transfer layer, oxygen Change the thickness of zinc layers increases successively from the bottom to top, and the thickness of alumina layer is sequentially reduced from the bottom to top.
  2. 2. perovskite solar cell according to claim 1, it is characterised in that：The transparent conducting glass substrate by FTO electro-conductive glass is made, and thickness is 2~5mm.
  3. 3. perovskite solar cell according to claim 1 or 2, it is characterised in that：In described electron transfer layer The change in concentration gradient of aluminium element is 0.68~0.73%/nm.
  4. 4. perovskite solar cell according to claim 1 or 2, it is characterised in that：The thickness of the electron transfer layer For 80~120nm.
  5. 5. perovskite solar cell according to claim 2, it is characterised in that：The perovskite light absorbing layer by CH3NH3PI3It is made, thickness is 200~300nm.
  6. 6. perovskite solar cell according to claim 1 or 2, it is characterised in that：The hole transmission layer is by P3HT systems Into thickness is 80~120nm.
  7. 7. perovskite solar cell according to claim 1 or 2, it is characterised in that：The electrode layer is made up of graphite, Thickness is 100~150nm.
  8. 8. perovskite solar cell according to claim 1 or 2, it is characterised in that：Under the electron transfer layer End face is provided with basalis.
CN201720649160.8U 2017-06-06 2017-06-06 A kind of perovskite solar cell Expired - Fee Related CN206758471U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201720649160.8U CN206758471U (en) 2017-06-06 2017-06-06 A kind of perovskite solar cell

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Application Number Priority Date Filing Date Title
CN201720649160.8U CN206758471U (en) 2017-06-06 2017-06-06 A kind of perovskite solar cell

Publications (1)

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CN206758471U true CN206758471U (en) 2017-12-15

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2583965A (en) * 2019-05-16 2020-11-18 Oxford Photovoltaics Ltd Photovoltaic device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2583965A (en) * 2019-05-16 2020-11-18 Oxford Photovoltaics Ltd Photovoltaic device
WO2020229826A1 (en) * 2019-05-16 2020-11-19 Oxford Photovoltaics Limited Photovoltaic device
US20220246872A1 (en) * 2019-05-16 2022-08-04 Oxford Photovoltaics Limited Photovoltaic device

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Granted publication date: 20171215

Termination date: 20180606