CN206635459U - A kind of fine melt polysilicon ingot crucible - Google Patents
A kind of fine melt polysilicon ingot crucible Download PDFInfo
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- CN206635459U CN206635459U CN201720163575.4U CN201720163575U CN206635459U CN 206635459 U CN206635459 U CN 206635459U CN 201720163575 U CN201720163575 U CN 201720163575U CN 206635459 U CN206635459 U CN 206635459U
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Abstract
A kind of fine melt polysilicon ingot crucible; provided with crucible body; the inner bottom part of crucible body is provided with high efficiency composition coating, and the high efficiency composition coating is made up of the ingot casting barrier layer, complex stratum nucleare and forming core protective layer laid successively from the bottom up, and the integral thickness of the high efficiency composition coating is in 0.3 3mm.High efficiency composition coating of the present utility model can effectively reduce crystal ingot bottom and glue crucible ratio; improve crystal ingot bottom nucleation; reduce crystal ingot defect, overall transformation efficiency 0.05% 0.1%, simultaneously because bottom forming core layer is effectively protected; can be with reinforced bottom forming core effect; coordinate fine melt casting ingot process to improve yield rate 2% 5% than fritting casting ingot process, shorten the 2h of ingot casting cycle 1, reduce production cost; its is reasonable in design, easy to operate.
Description
Technical field
A kind of solar energy polycrystalline silicon casting unit is the utility model is related to, more particularly to a kind of fine melt polycrystalline silicon ingot casting earthenware
Crucible.
Background technology
At present, in the market mainly has the method for two kinds of setting seed crystals, and one kind is fritting ingot casting technology, by controlling crucible bottom
Portion's burn-off rate, retain the polysilicon of certain altitude as seed crystal, this method can be effectively improved crystal ingot bottom forming core, and lifting is brilliant
Ingot quality, but ingot casting yield is not high, typically 65% or so.Another kind is directly to set seed crystal in crucible bottom, and seed crystal is generally
Quartz sand or silicon grain, improve crystal ingot bottom forming core using heterogeneous forming core or homogeneity nucleating mechanism.Under fine melt technique, seed crystal
Easily influenceed to be softened or melted by high temperature and lose the function of control forming core, while the effect of the barrier silicon liquid of silicon nitride
Forming core is directly affected, silicon nitride dosage easily causes viscous crucible to split ingot less, causes ingot casting control condition harsh, and forming core is unstable,
It is difficult to obtain preferable grain size distribution.
The content of the invention
Technical problem to be solved in the utility model is in view of the shortcomings of the prior art, there is provided it is a kind of reasonable in design, make
With convenient fine melt polysilicon ingot crucible.
Technical problem to be solved in the utility model is realized by following technical scheme, and the utility model is
A kind of fine melt polysilicon ingot crucible, is characterized in,
Provided with crucible body, the inner bottom part of crucible body is provided with high efficiency composition coating, and the high efficiency composition coating is by under
Ingot casting barrier layer, complex stratum nucleare and the forming core protective layer up laid successively are formed, the overall thickness of the high efficiency composition coating
Degree is in 0.3-3mm.
Technical problem to be solved in the utility model can also be realized by following technical scheme, described casting
Ingot barrier layer thickness is 0.1-1mm, and the thickness of the complex stratum nucleare is 0.1-2mm, and the thickness of the forming core protective layer is
0.1-0.5mm。
Technical problem to be solved in the utility model can also be realized by following technical scheme, described casting
Ingot barrier layer thickness is 0.2-0.5mm, and the thickness of the complex stratum nucleare is 0.5-1mm, and the thickness of the forming core protective layer is
0.2-0.3mm。
Technical problem to be solved in the utility model can also be realized by following technical scheme, described casting
Ingot barrier layer is made up of silicon nitride, water and binding agent, and the complex stratum nucleare is by silicon grain, quartz sand particle or silicon-carbide particle
Form, the forming core protective layer is made up of silicon nitride and binding agent；
The combination of both the composite nucleating layer choosing silicon grain and quartz sand particle, both silicon grain and silicon-carbide particle
Combination, or the combination of silicon grain, quartz sand particle and silicon-carbide particle three.
Technical problem to be solved in the utility model can also be realized by following technical scheme, described compound
The granularity of particle is 0.1-5mm, preferably 150 μm -600 μm in forming core layer.
Technical problem to be solved in the utility model can also be by following technical scheme come what is realized, and described answers
Close forming core layer to be provided with upper and lower two layers, upper strata is the silicon grain layer by forming in polyhedral silicon grain, and lower floor is by polyhedron
Quartz sand particle and/or silicon-carbide particle form silicide particle layer.
Technical problem to be solved in the utility model can also be realized by following technical scheme, it is described efficiently
The integral thickness of composite coating is 0.8-2mm.
Technical problem to be solved in the utility model can also be realized by following technical scheme, in the height
The lower section of effect composite coating is provided with the high efficiency coating being made up of silicon grain or quartz sand particle.
Technical problem to be solved in the utility model can also be realized by following technical scheme, in the earthenware
The madial wall of crucible body is provided with silicon nitride coating.
Compared with prior art, the beneficial effects of the utility model：
（1）First layer barrier layer can effectively reduce crucible bottom and glue crucible ratio, ensure stable yield rate；
（2）Second layer forming core layer can play a part of controlling bottom forming core, and acquisition crystal grain is small and is uniformly distributed, and reduce brilliant
Ingot defect, improve cell piece efficiency 0.05%-0.1%；
（3）Third layer protective layer can play a part of protecting forming core layer seed crystal, and barrier melting silicon liquid directly connects with seed crystal
Touch, extend the RT of seed crystal at high temperature, help to coordinate fine melt technique, lift the yield rate 2%-5% of crystal ingot.
Brief description of the drawings
Fig. 1 is structural representation of the present utility model.
Embodiment
Referring to the drawings, concrete technical scheme of the present utility model is further described, in order to those skilled in the art
Member is further understood that the present invention, without forming the limitation to its right.
Embodiment 1, reference picture 1, a kind of fine melt polysilicon ingot crucible, provided with crucible body 4, the interior bottom of crucible body 4
Portion is provided with high efficiency composition coating, and the high efficiency composition coating is by ingot casting barrier layer 3, the complex stratum nucleare laid successively from the bottom up
2 and forming core protective layer 1 form, the integral thickness of the high efficiency composition coating is in 0.3-3mm.
Embodiment 2, the fine melt polysilicon ingot crucible described in embodiment 1, the described thickness of ingot casting barrier layer 3 are 0.1mm,
The thickness of the complex stratum nucleare 2 is 0.1mm, and the thickness of the forming core protective layer 1 is 0.1mm.
Embodiment 3, the fine melt polysilicon ingot crucible described in embodiment 1, the described thickness of ingot casting barrier layer 3 are 1mm, institute
The thickness for stating complex stratum nucleare 2 is 1.5mm, and the thickness of the forming core protective layer 1 is 0.5mm.
Embodiment 4, the fine melt polysilicon ingot crucible described in embodiment 1, the described thickness of ingot casting barrier layer 3 are 0.5mm,
The thickness of the complex stratum nucleare 2 is 1mm, and the thickness of the forming core protective layer 1 is 0.3mm.
Embodiment 5, the fine melt polysilicon ingot crucible described in embodiment 1, the described thickness of ingot casting barrier layer 3 are 0.2mm,
The thickness of the complex stratum nucleare 2 is 0.5mm, and the thickness of the forming core protective layer 1 is 0.2mm.
Embodiment 6, the fine melt polysilicon ingot crucible described in embodiment 1, the described thickness of ingot casting barrier layer 3 are 0.5mm,
The thickness of the complex stratum nucleare 2 is 1mm, and the thickness of the forming core protective layer 1 is 0.3mm.
Embodiment 7, the fine melt polysilicon ingot crucible described in embodiment 1, the described thickness of ingot casting barrier layer 3 are 0.4mm,
The thickness of the complex stratum nucleare 2 is 0.8mm, and the thickness of the forming core protective layer 1 is 0.25mm.
Embodiment 8, the fine melt polysilicon ingot crucible described in embodiment 1, described ingot casting barrier layer 3 by being in mass ratio
1：1-4：0.1-1 silicon nitride, water and binding agent is formed, and the complex stratum nucleare is by silicon grain, quartz sand particle or carborundum
At least two of particle combine, preferably the combination of both silicon grain and quartz sand particle, silicon grain and silicon-carbide particle two
The combination of person, or the combination of silicon grain, quartz sand particle and silicon-carbide particle three, the forming core protective layer is by silicon nitride and glues
Agent is tied to form.
Embodiment 9, the fine melt polysilicon ingot crucible described in embodiment 1, the granularity of particle is in the complex stratum nucleare 2
0.1-5mm, preferably 150 μm -600 μm.
Embodiment 10, the fine melt polysilicon ingot crucible described in embodiment 1, described complex stratum nucleare 2 are provided with upper and lower two
Layer, upper strata are the silicon grain layer by being formed in polyhedral silicon grain, and lower floor is by polyhedral quartz sand particle and/or carbon
The silicide particle layer that silicon carbide particle is formed, the particle diameter of the particle diameter of upper strata particle and lower floor's particle are unequal.
Embodiment 11, the fine melt polysilicon ingot crucible described in embodiment 1, the integral thickness of the high efficiency composition coating are
0.8-2mm, further preferred 1-1.5 mm.
Embodiment 12, the fine melt polysilicon ingot crucible described in embodiment 1, silicon nitride dosage in the ingot casting barrier layer 3
Silicon nitride dosage is 50-100g in 100-250g, forming core protective layer 1.
The preparation method of the utility model high efficiency composition coating is：
（1）The inner bottom part of crucible body is subjected to Air blowing cleaning；
（2）Silicon nitride powder, water, binding agent are configured to compo according to certain mass ratio, compo is adopted
One layer of ingot casting barrier layer is prepared in the inner bottom part of crucible body with brushing or spraying method, described ingot casting barrier layer thickness is
0.2-1mm；
（3）One layer of complex stratum nucleare is prepared on described ingot casting barrier layer, complex stratum nucleare is with silicon grain, quartz sand
Or carborundum is uniformly prepared on above-mentioned ingot casting barrier layer, then spray a layer binder as seed crystal by the way of sprinkling
Fixed seed crystal, described composite nucleating thickness degree is 0.5-2mm；
（4）One layer of forming core protective layer is prepared on described complex stratum nucleare, is mainly pressed by silicon nitride, water, binding agent
Compo is configured to according to certain mass ratio, is prepared by way of spraying, described protective layer thickness is 0.1-
0.5mm；
（5）Silicon nitride purity requirement is in more than 5N, silicon nitride in above-mentioned compo：Water：Binding agent mass ratio is 1：（1-
4）：（0.1-1）, wherein, the silicon nitride total amount of high efficiency composition coating is 100-300g, and the silicon nitride dosage of ingot casting barrier layer exists
100-250g, the silicon nitride dosage of forming core protective layer is 50-100g, and binding agent is mainly Ludox or vitrified bonding（PVA）；
（6）Seed crystal used in above-mentioned complex stratum nucleare, it is desirable to which for granularity between 150 μm -600 μm, dosage, should in 100-300g
Layer is provided with for the composite particles of at least one of quartz sand and carborundum and silicon grain as seed crystal, described complex stratum nucleare
Upper and lower two layers, upper strata is the silicon grain layer by being formed in polyhedral silicon grain, and lower floor is by polyhedral quartz sand particle
And/or the silicide particle layer that carborundum is formed, the particle diameter of the particle diameter of upper strata particle and lower floor's particle is unequal, preferably upper strata
The particle diameter of grain is less than the particle diameter of lower floor's particle, and the fusing point of silicon grain is low, and after silicon grain fusing, quartz sand, carborundum provide auxiliary
Guide effect is helped, improves crystal ingot bottom nucleation, will not also glue pot.
Embodiment 13, the fine melt polysilicon ingot crucible described in embodiment 1, first laying one layer in the bottom of crucible body has
The high efficiency coating that silicon grain or quartz sand particle are formed, then high efficiency composition coating is prepared on high efficiency coating top,
（1）Configure the 1st layer of ingot casting barrier layer：It is required that silicon nitride：Pure water：Ludox is 200g：200g：50g, stir
Afterwards, by the way of brushing, prepare in high efficient crucible inner bottom part；
（2）Configure the 2nd layer of complex stratum nucleare：When brushing uniformly and coating surface does not parch completely, by 300g silicon grains
By way of sprinkling, uniformly it is sprayed on barrier layer, then spraying adhesive on its basis, wherein binding agent is by 50g silicon
Colloidal sol and 100g pure water are mixed with, by spontaneously dry more than 1h or 100-200 DEG C toast 30min obtain the 2nd layer it is compound
Forming core layer；
（3）Configure the 3rd layer of forming core protective layer, it is desirable to silicon nitride：Pure water:Ludox is 50g:240g：20g, stir
Afterwards, by the way of spraying, prepare on the 2nd layer of complex stratum nucleare；
（4）Crucible body side spraying silicon nitride coating, it is desirable to silicon nitride：Pure water：Ludox is 600g：2000g：
200g, after stirring, by the way of spraying, prepare in crucible side；
After prepared by above-mentioned coating, it is desirable to after drying 1-2h under the conditions of 80-200 DEG C, you can for feeding；
After ingot casting, bottom does not find viscous crucible, and crystallite dimension ＜ 5mm, yield rate is in 70-71%, conversion efficiency lifting 0.05-
0.1%。
Embodiment 14, the fine melt polysilicon ingot crucible described in embodiment 1, high efficiency composition is prepared in the bottom of crucible body
Coating：
（1）Configure the 1st layer of ingot casting barrier layer：It is required that silicon nitride：Pure water：Ludox is 100g：200g：50g, stir
Afterwards, by the way of brushing, prepare in high efficient crucible inner bottom part；
（2）Configure the 2nd layer of complex stratum nucleare：When brushing uniformly and coating surface does not parch completely, by 400g silicon grains
By way of sprinkling, uniformly it is sprayed on barrier layer, then spraying adhesive on its basis, wherein binding agent is by 50g silicon
Colloidal sol and 100g pure water are mixed with, by spontaneously dry more than 1h or 100-200 DEG C toast 30min obtain the 2nd layer it is compound
Forming core layer；
（3）Configure the 3rd layer of forming core protective layer, it is desirable to silicon nitride：Pure water:Ludox is 100g:240g：20g, stir
Afterwards, by the way of spraying, prepare on the 2nd layer of complex stratum nucleare；
（4）Crucible body side spraying silicon nitride coating, it is desirable to silicon nitride：Pure water：Ludox is 600g：2000g：
200g, after stirring, by the way of spraying, prepare in crucible side；
After prepared by above-mentioned coating, it is desirable to after drying 1-2h under the conditions of 80-200 DEG C, you can for feeding；
After ingot casting, bottom does not find viscous crucible, and crystallite dimension ＜ 5mm, yield rate is in 70-71%, conversion efficiency lifting 0.05-
0.1%。
The utility model can effectively reduce crucible bottom and glue crucible ratio by setting ingot casting barrier layer 3, ensure it is stable into
Product rate；By complex stratum nucleare 2, can play a part of controlling bottom forming core, acquisition crystal grain is small and is uniformly distributed, and reduces crystal ingot
Defect, improve cell piece efficiency 0.05%-0.1%；The work of protection complex stratum nucleare seed crystal can be played by forming core protective layer 1
With, barrier melting silicon liquid directly contacts with seed crystal, extends the RT of seed crystal at high temperature, helps to coordinate fine melt technique,
The yield rate lifting 2%-5% of crystal ingot.
The utility model overcomes the deficiency of existing high efficient crucible and fritting casting ingot process, there is provided one kind is under fine melt technique
Contribute to the high efficiency composition coating of improvement crucible bottom seeding effect, by mutual compound between coating, you can reach protection
Seed crystal, while improve the viscous crucible in crystal ingot bottom and split ingot, it is less demanding to casting ingot process control condition, can be under fine melt process conditions
Ingot casting uses, and can also effectively reduce bottom and glue crucible rate to 0%, reinforced bottom forming core, improve crystal ingot defect, lift ingot quality
And yield rate.
Claims (9)
- A kind of 1. fine melt polysilicon ingot crucible, it is characterised in that：Provided with crucible body, the inner bottom part of crucible body is provided with efficiently Composite coating, the high efficiency composition coating are protected by the ingot casting barrier layer, complex stratum nucleare and forming core laid successively from the bottom up Layer is formed, and the integral thickness of the high efficiency composition coating is in 0.3-3mm.
- 2. fine melt polysilicon ingot crucible according to claim 1, it is characterised in that：Described ingot casting barrier layer thickness is 0.1-1mm, the thickness of the complex stratum nucleare is 0.1-2mm, and the thickness of the forming core protective layer is 0.1-0.5mm.
- 3. fine melt polysilicon ingot crucible according to claim 2, it is characterised in that：Described ingot casting barrier layer thickness is 0.2-0.5mm, the thickness of the complex stratum nucleare is 0.5-1mm, and the thickness of the forming core protective layer is 0.2-0.3mm.
- 4. according to the fine melt polysilicon ingot crucible described in claim any one of 1-3, it is characterised in that：The complex stratum nucleare The granularity of middle particle is 0.1-5mm.
- 5. fine melt polysilicon ingot crucible according to claim 4, it is characterised in that：Particle in the complex stratum nucleare Granularity is 150 μm -600 μm.
- 6. fine melt polysilicon ingot crucible according to claim 1, it is characterised in that：Described complex stratum nucleare is provided with upper Lower two layers, upper strata is the silicon grain layer by being formed in polyhedral silicon grain, lower floor be by polyhedral quartz sand particle or The silicide particle layer that silicon-carbide particle is formed.
- 7. fine melt polysilicon ingot crucible according to claim 1, it is characterised in that：The entirety of the high efficiency composition coating Thickness is 0.8-2mm.
- 8. fine melt polysilicon ingot crucible according to claim 1, it is characterised in that：Under the high efficiency composition coating Side is provided with the high efficiency coating being made up of silicon grain or quartz sand particle.
- 9. fine melt polysilicon ingot crucible according to claim 1, it is characterised in that：In the madial wall of the crucible body It is provided with silicon nitride coating.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108342774A (en) * | 2018-01-17 | 2018-07-31 | 晶科能源有限公司 | The preparation method and ingot casting crucible of polysilicon seeding coating |
| CN108486652A (en) * | 2018-04-19 | 2018-09-04 | 常熟华融太阳能新型材料有限公司 | A kind of high-efficiency seed crystal layer reducing polycrystalline silicon ingot casting dislocation |
| CN109023522A (en) * | 2018-09-28 | 2018-12-18 | 英利能源（中国）有限公司 | The preparation method of polycrystal silicon ingot |
| CN116514579A (en) * | 2023-03-31 | 2023-08-01 | 徐州协鑫太阳能材料有限公司 | Black sand full-melting efficient crucible for polycrystalline ingot casting and preparation method |
-
2017
- 2017-02-23 CN CN201720163575.4U patent/CN206635459U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108342774A (en) * | 2018-01-17 | 2018-07-31 | 晶科能源有限公司 | The preparation method and ingot casting crucible of polysilicon seeding coating |
| CN108486652A (en) * | 2018-04-19 | 2018-09-04 | 常熟华融太阳能新型材料有限公司 | A kind of high-efficiency seed crystal layer reducing polycrystalline silicon ingot casting dislocation |
| CN109023522A (en) * | 2018-09-28 | 2018-12-18 | 英利能源（中国）有限公司 | The preparation method of polycrystal silicon ingot |
| CN116514579A (en) * | 2023-03-31 | 2023-08-01 | 徐州协鑫太阳能材料有限公司 | Black sand full-melting efficient crucible for polycrystalline ingot casting and preparation method |
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