CN206570406U - The precipitation equipment of flame hydrolysis defect can be eliminated - Google Patents

The precipitation equipment of flame hydrolysis defect can be eliminated Download PDF

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Publication number
CN206570406U
CN206570406U CN201720144914.4U CN201720144914U CN206570406U CN 206570406 U CN206570406 U CN 206570406U CN 201720144914 U CN201720144914 U CN 201720144914U CN 206570406 U CN206570406 U CN 206570406U
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wafer
spray torch
chamber
defect
flame hydrolysis
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金正焕
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02269—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by thermal evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02293—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process formation of epitaxial layers by a deposition process
    • H01L21/205—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

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Abstract

Produce silicon dioxide granule the utility model discloses a kind of hydrolyze chemical reaction gas in chamber and deposit to form the precipitation equipment for eliminating flame hydrolysis defect of silicon fiml on a wafer, including：Assembling wafer makes the turntable that it rotates, it is defined by dividing plate and is formed at multiple chambers of dividing plate both sides, positioned at multiple chamber interior central uppers and including making the combustion gas reaction of oxygenous and hydrogen produce the spray torch of flame, spray torch is assembled on spray torch arm, spray torch arm is motor driven rotation, the sucking and discharging device for producing and being not deposited on the suction discharge of the silicon particle on wafer will be reacted by combustion gas, be provided to chamber side, the laser determination device portion of wafer deposit thickness is determined using laser group；The utility model possesses multiple chambers, and spray torch alternates operation between the turntable of each chamber in the state of Persistence flame, continuously coated to the wafer positioned at turntable top, so that stable processing technique, and improve the yield of product.

Description

The precipitation equipment of flame hydrolysis defect can be eliminated
Technical field
The utility model is related to a kind of flame hydrolysis deposition device, more particularly to one kind possesses multiple chambers, and spray torch is being held Operation is alternateed between the turntable of each chamber in the state of continuous flame continuously to coat to the wafer positioned at turntable top The precipitation equipment for eliminating flame hydrolysis defect.
Background technology
Flame hydrolysis deposition device in the prior art（apparatus for flame hydrolysis deposition） （Hereinafter referred to as " FHD "）It is by method for preparing optical fiber i.e. VAD (vacuum application deposition：Sunk in vacuum Product) device is derived, and is its burning is produced reaction to being supplied raw material in spray torch at ambient pressure, and then make oxide microparticle It is deposited on the device of substrate.
Flame hydrolysis deposition（FHD;Flame Hydrolysis Deposition）It is to produce flame with spray torch, utilizes oxygen Change and hydrolysis produces silicon dioxide granule, silicon dioxide granule is deposited on the method for forming silicon fiml above silicon wafer. The main component that the finished substrate manufactured by the FHD is formed in substrate surface for quartz bottom cladding layer and core layer, Core layer on the cladding layer of its underpart is, with reactive ion etching method formation core, master to be formed in order to bury the core Composition is quartzy top cladding layer.
Spray torch is placed on than turntable while forming atmosphere to stabilize the oxide microparticle for spraying torch The bigger position of substrate tip radius, i.e. turntable marginal position, make turntable be rotated with invariant rotation numbers, at the same make it is described spray torch to The center position of turntable is moved, and then the substrate surface on turntable forms to be heat-treated the glass film of deposition densifying.
Patent No. 10-0446517, entitled silicon wafer manufacture uses flame hydrolysis deposition device, discloses tool There are multiple spray torches, the composition quantity of turntable is twice of the spray torch, can deposit silicon dioxide granule on multiple wafers Technical scheme, but because drive device its structure for being equipped with multiple spray torches and turntable and the driving spray torch is more complicated, It is also many using accessory, therefore easily cause the problems such as low production performance, production cost increase.
Patent No. 10-1176127, entitled flame hydrolysis deposition device discloses spray torch and passes through multiple segmentations Branched pipe supply reacting gas and generation flame needed for combustion gas technical scheme, but due to extending the operation technique time, Reduce efficiency.
Utility model content
The purpose of this utility model is that providing one kind possesses multiple chambers, and spray torch is in the state of Persistence flame at each Operation is alternateed between the turntable of chamber and eliminates flame hydrolysis defect to what the wafer positioned at turntable top was continuously coated Precipitation equipment, so as to realize the stabilisation of production technology and lift the yield of product.
It is of the present utility model eliminate flame hydrolysis defect precipitation equipment be as in chamber by chemical reaction gas Hydrolysis produces silicon dioxide granule and deposits the precipitation equipment for eliminating flame hydrolysis defect to form silicon fiml on a wafer, wraps Include：The wafer and assembling wafer make the turntable that it rotates, and are defined by dividing plate and are formed at the two or more chamber of dividing plate both sides Room；Positioned at described two above chamber interiors central upper and including making the combustion gas reaction of oxygenous and hydrogen produce flame Spray torch, the spray torch are assembled in the motor that on the spray torch arm of reacting part and driving spray torch arm rotates；The combustion gas will be passed through Reaction produces and is not deposited on the sucking and discharging device of the suction discharge of the silicon particle on wafer；It is provided to the one of the chamber Side, the laser determination device portion of wafer deposit thickness is determined using laser group (Laser Set).
As further improvement of the utility model, the spray torch arm of the reacting part includes being assemblied in motor upper side and institute State the placement portion of the rotation same direction rotation of motor upper side；In the extension of the elongated central formation in the placement portion；With And the junction surface that forms with the spray torch corresponding hollow bulb is formed in one, and terminal part with the extension side；It is described Spray torch is inserted into engagement in hollow bulb with dismountable form.
Further improved as of the present utility model, the spray torch arm that the spray torch inserts the reacting part engaged can be located at many Individual turntable center top.
Further improved as of the present utility model, the horizontal section for spraying torch is with circular concentric into outside outermost Possess two projections on side face, can prevent spray torch from sliding in the end portion assembling projection of spray torch, and for setting from the ground Calibrated altitude.
Further improved as of the present utility model, multiple inlets are being set gradually on outer peripheral face on the outside of the spray torch And the movement that assembled hose occurs to limit due to vibration, the inlet and flexible pipe are special using injection gas " L " shape Rich dragon union elbow connection, the inlet is in order that Teflon union elbow smoothly inserts and is " L " font.
Further improved as of the present utility model, including：For determine the deposit thickness of the wafer and with it is described The reative cell of chamber linkage, it is located at chamber side, and the turntable rotates across reative cell and chamber two spaces, and utilizes sharp Light group determines the actual measured value of wafer deposit thickness and makes wafer by swashing that set thickness setting value is deposited Light measurement device portion.
Further improved as of the present utility model, the side in the laser determination device portion is also equipped with showing wafer The device of real-time deposit thickness.
Beneficial effect the beneficial effects of the utility model are chamber possessing multiple, and what is possessed on the chamber turns The flame that torch is sprayed between platform is alternateed under persistent state and can continuously coated to the wafer positioned at turntable top, so that Realize process stabilizingization and lifting product yield；Be also equipped with the chamber link reative cell and turntable revolves across two spaces Turn, using laser thickness determine device in the reative cell and determine the thickness of wafer and press set thickness deposition, therefore can be with Target thickness value is confirmed in advance；Torch is sprayed with circular concentric into possessing two projections on outermost outer peripheral face and assembled on spray torch When can be with anti-skidding, and settable calibrated altitude from the ground.
Brief description of the drawings
Fig. 1 is the perspective view of flame hydrolysis deposition device in the prior art；
Fig. 2 is the perspective view of the precipitation equipment of the present utility model for eliminating flame hydrolysis defect；
Fig. 3 is the perspective view of reacting part of the present utility model；
Fig. 4 is the running status plan of reacting part of the present utility model；
Fig. 5 is the perspective view of the present utility model for spraying torch；
Fig. 6 is the perspective view in laser determination device portion of the present utility model；
Fig. 7 is the front view of chamber of the present utility model.
Symbol description in figure：
10 chambers, 11 turntables, 12 wafers, 13 dividing plates, 20 reacting parts, 21 spray torch arms, 22 placement portions, 23 are prolonged Long portion, 24 junction surfaces, 25 motors, 30 laser determination device portions, 31 laser groups, 32 setting thickness display windows, 40 spray torches, 41 projections, 42 inlets, 43 flexible pipes, 44 Teflon union elbows.
Embodiment
To make the purpose of this utility model, technical scheme and advantage clearer, below in conjunction with the accompanying drawings to the utility model Preferred embodiment be described, however, the embodiment is only a part of embodiment of the present utility model, be not intended to limit The protection domain of technical solutions of the utility model, those of ordinary skill in the art institute on the premise of creative work is not made The every other embodiment obtained, belongs to the scope of the utility model protection.
, will be not detailed for the known function and structure for thinking to make invention objective thicken when illustrating the utility model State.
As shown in Fig. 2 the precipitation equipment of the present utility model for eliminating flame hydrolysis defect be generally divided into chamber 10, it is anti- Answer portion 20, sucking and discharging device（Diagram is not marked）With laser determination device portion 30.
The chamber 10 is to provide the space deposited on wafer 12 needed for silicon dioxide granule, by deposition space and outside Portion isolates, and prevents the infiltration of impurity during silicon dioxide granule deposition, embodiment of the present utility model is in a chamber 10 On the basis of be equipped with a chamber 10 again, make the chamber 10 be located at the both sides of dividing plate 13.For lifting process efficiency, it can also be equipped with Greater number of chamber 10.
According to Fig. 7, wafer 12, the institute during flame hydrolysis deposition are assembled on the turntable 11 that the chamber 10 is equipped with Stating the rotation of turntable 11 rotates wafer 12, and silicon fiml is formed with uniform thickness on wafer 12.
The turntable 11 is in the formation silicon thick film of wafer 12, and the turntable 11 is silicon dioxide granule is smoothly deposited, With 300~600 DEG C of preheating temperature, highest instantaneous temperature can about rise to 1200 DEG C~1300 DEG C, now due to heat change Shape or thermal expansion turntable 11 are easily distorted, and wafer 12 is occurred harmful effect, therefore the strong stone of heat resistance of turntable 11 Ink material is manufactured, and in order to prevent the high-temperature oxydation of turntable 11 of the graphite material, preferred pair turntable 11 does SIC coating treatments.
The SIC coatings are silicon carbide（Carborundum）Abbreviation, be production light emitting diode（LED）It is required " wafer " support be " pedestal " coating technology.Normally enter organometallic chemistry deposition（MO-CVD）Wafer must be resistance to By 1,250 DEG C of high temperature, the either pedestal that of graphite is made of the wafer still positioned at wafer bottom must be resistant to 1, 250 DEG C of high temperature and high rotation number, it is therefore desirable to apply SIC coating technologies.
As shown in figure 3, the reacting part 20 is located at described two central uppers with upper chamber 10, including：Make oxygenous Combustion gas with hydrogen carries out the spray torch 40 that reaction produces flame；The spray torch 40 is assembled on spray torch arm 21；Driving spray torch arm The motor 25 of 21 rotations.The spray torch 40 is produced with the flame unstrpped gas and chemical reaction gas being made up of hydrogen and oxygen etc. Oxidation and hydrolysis, and then form particle and be deposited on the wafer 12.
The composition of the spray torch arm 21 includes：In the upper side for being assemblied in motor 25, the rotation with the upper side of motor 25 Turn the placement portion 22 of same direction rotation；The extension 23 formed by the elongated central in the placement portion 22；And prolong with described The long side of portion 23 forms one and the junction surface 24 of terminal part formation hollow bulb corresponding with the spray diameter of torch 40.The motor 25 be the rotation that spray torch arm 21 is performed with set angle value, preferably uses D.D (Direct Drive) motor, the spray torch arm 21 except carried out by motor 25 it is in rotary moving in addition to can also carry out moving axially back and forth with smoothly close to described along extension 23 Wafer 12 on turntable 11.
The sucting and exhausting device（Diagram is not marked）It is that will not be deposited on the silicon substrate and be left in chamber 10 Oxide discharge, i.e., the hot gas that produces flame and residual oxide by with it is described spray the end of torch 40 and be separated by suitable distance set The sucking and discharging device put（Diagram is not marked）Suction discharge.
The laser determination device portion 30 is to determine the deposit thickness of wafer 12 and ensure to carry out according to setting value certainly Dynamic deposition, thickness is determined using laser group (Laser Set) 31, the thickness value of practical measurement is carried out by set setting value Thickness is deposited.
As described above, the precipitation equipment carrying out practically of the present utility model for eliminating flame hydrolysis defect is described as follows.
As shown in Fig. 2 being equipped with transmission device in chamber 10（Diagram is not marked）Formation is rotated by the actuator drives Turntable 11, fix wafer 12 on the upper end of the turntable 11.
When opening the power supply of flame hydrolysis deposition device, transmission device（Diagram is not marked）Start, the heater of turntable 11 （Diagram is not marked）After being energized by electric wire, the wafer 12 disposed on turntable 11 is rapidly heated, in multiple reactants Carrying device（Diagram is not marked）Multiple reactants of middle mixing silicon is applied on the wafer 12 on turntable 11 by spraying torch 40 and Thick film is formed, the turntable 11 is according to the control constant speed rotary of central control unit, and multiple reactants pass through according to the speed to be sprayed Torch 40 is injected on wafer 12 with the rotation of turntable 11, and is applied silicon successively and formed thick film.
In the prior art, turntable 11 is deposited in the way of circular rotatable certain time culture circle, but the utility model It is also equipped with assembling wafer 12 chamber 10 for the turntable 11 for rotating it, the dividing plate being equipped with central part between the chamber 10 13 be that brigadier's chamber 10 is placed in the both sides of dividing plate 13, combustion gas reaction is produced the spray torch 40 of flame, the spray torch 40 and is assembled in spray The reacting part 20 of the motor 25 rotated on torch arm 21 and including driving spray torch arm 21 is positioned at the center of described two chambers 10 Top.
For facility, left chamber 10 will be referred to as positioned at the chamber 10 in left side in two chambers 10, by positioned at the chamber on right side Room 10 is referred to as right chamber 10, is to make first by the sidesway of side cavity 10 action to the left of reacting part 20 of the central upper of two chambers 10 Point between at the beginning of industry.
Below according to being illustrated shown in Fig. 4 to flow chart, including：Inside chamber 10 more than described two With the rotation of motor 25, by center, side cavity 10 moves the reacting part 20 of central upper side to the left, makes the spray on spray torch arm 21 Torch 40 is moved to the upper side for the wafer 12 laid on the turntable 11 of the left chamber 10, and the institute after the closing of dividing plate 13 State spray torch 40 and flame is produced with the combustion gas that chemically reacts, to the deposition film of wafer 12, aforesaid operations are implemented for the utility model The first step of example operation technique；Dividing plate 13 is opened when the operation of the first step is completed, and the reacting part 20 is with motor 25 rotation, by left chamber 10, side cavity 10 moves to the right, and after the closing of dividing plate 13, the spray torch 40 of the reacting part 20 is in fire The deposition film of wafer 12 is given under flame persistent state, this operation is the second step of the utility model embodiment operation technique；On State dividing plate 13 when second step operation is completed to reopen, with the rotation of motor 25, side cavity 10 moves the reacting part 20 to the left It is dynamic and perform the first step and the operation technique involved by second step repeatedly.
The reacting part 20 carries out alternating between two chambers 10 in the state of non-knock down the flame and worked continuously, right When wafer 12 in a side cavity 10 carries out particle deposition operation, the completion in another side cavity 10 can be made The wafer 12 of industry is cleaned after taking out, and can place needs the new wafer 12 of particle deposition afterwards, therefore, and this practicality is new The operation technique time of type than prior art fast twice of operation technique time and advantageously in technique productions.
In the utility model, the deposition of the wafer 12 can be determined between each step of the alternately operating, i.e., This period after the completion of the operation technique first step and before the startup of operation technique second step, by positioned at chamber 10 1 The laser determination device portion 30 of side determines the thickness of wafer 12, measures the deposit thickness of wafer 12 by 31 and reaches setting height When dividing plate 13 open, then the reacting part 20 is moved with the rotation of motor 25 to another side cavity 10.
As shown in fig. 6, be equipped with laser determination device portion 30 in the side of chamber 10, the laser determination device portion 30 have with The shape of the linkage of chamber 10 simultaneously possesses reative cell and turntable 11 rotates across the chamber 10 and the reative cell two spaces； When determining 12 deposit thickness of wafer using the laser group 31 in the laser determination device portion 30, positioned at laser determination dress The setting thickness display window 32 for putting the real-time deposition thickness of wafer 12 of display of 30 sides shows actual measured value and thick by setting Spend the setting value of deposition.
During performing the operation technique, reacting part 20 between chambers 10 continuous moving when may vibrate, In order to solve to spray the problem of torch mouthful and pipeline on torch 40 etc. are easily snapped off and departed from, such as Fig. 5 because of caused by the vibration Shown, the utility model is equipped with two projections 41 on the spray bottom outer peripheral face of torch 40, to prevent from being assemblied on spray torch arm 21 Spray torch 40 to bottom direction to depart from, the projection 41 can also be used as the Height Standard determined from the ground in addition.
The position that the projection 41 is adjusted according to the thickness of wafer 12 and situation is that one of ordinary skill in the art is ripe The general knowledge known.
Set gradually multiple inlets 42 to assembled hose 43 to limit because vibration is drawn on the spray outer peripheral face of torch 40 The movement of generation, the inlet 42 and flexible pipe 43 are connected using " L " the shape Teflon union elbow 44 of injection gas, to make spy Rich dragon union elbow 44 smoothly inserts the inlet 42, preferably " one " font.
In addition, the flame water such as lamp and heater, central control unit that the side of loader, cvd furnace and cvd furnace is equipped with The technology generally used on solution precipitation equipment will not be described in detail herein.
Above example and accompanying drawing are only limited to illustrate the technical solution of the utility model, rather than to the utility model System；Although the utility model is described in detail with reference to the foregoing embodiments, one of ordinary skill in the art should manage Solution：It can still be modified to the technical scheme described in foregoing embodiments, or which part technical characteristic is carried out Equivalent substitution；And these modifications or replacement, the essence of appropriate technical solution is departed from each embodiment institute of the utility model State the scope of technical scheme.Protection domain of the present utility model should be explained according to the scope of the said claims, and at it All technical schemes in equivalents should all belong to right of the present utility model.

Claims (6)

1. a kind of precipitation equipment for eliminating flame hydrolysis defect, it is characterised in that as in chamber by chemical reaction gas Silicon dioxide granule and the on a wafer precipitation equipment for eliminating flame hydrolysis defect of deposited silicon film occur for hydrolysis, including：
The wafer and make turntable that it rotates for assembling wafer, two in dividing plate both sides are separated to form with dividing plate with Upper chamber；
Positioned at described two above chamber interiors central upper and including making the combustion gas reaction of oxygenous and hydrogen produce flame Spray torch, the spray torch be assembled on the spray torch arm of reacting part and driving spray torch arm rotation motor；
The sucking and discharging device for producing and being not deposited on the suction discharge of the silicon particle on wafer will be reacted by the combustion gas；
The side of the chamber is provided to, the laser determination device portion of wafer deposit thickness is determined using laser group.
2. the precipitation equipment according to claim 1 for eliminating flame hydrolysis defect, it is characterised in that the reacting part Spray torch arm includes：
It is assemblied in motor upper side and the placement portion of the rotation same direction rotation of the motor upper side；
In the extension of the elongated central formation in the placement portion；
And the engagement that forms with the spray torch corresponding hollow bulb is formed in one, and terminal part with the extension side Portion；
The spray torch is inserted into engagement in hollow bulb with dismountable form.
3. the precipitation equipment according to claim 1 for eliminating flame hydrolysis defect, it is characterised in that the horizontal stroke of the spray torch To section with circular concentric into, possess two projections on outermost outer peripheral face, can be to prevent in the end portion assembling projection of spray torch Only spray torch slides, and for setting calibrated altitude from the ground.
4. the precipitation equipment according to claim 1 for eliminating flame hydrolysis defect, it is characterised in that outside the spray torch Set gradually the movement that multiple inlets and assembled hose occur to limit due to vibration on the outer peripheral face of side, the inlet and Flexible pipe is connected using injection gas " L " shape Teflon union elbow, and the inlet is in order that Teflon union elbow is suitable Profit is inserted and is " one " font.
5. the precipitation equipment according to claim 1 for eliminating flame hydrolysis defect, it is characterised in that including：
For the reative cell for determining the deposit thickness of the wafer and being linked with the chamber, it is located at chamber side, described turn Platform rotates across reative cell and chamber two spaces, and determines the actual measured value of wafer deposit thickness using laser group and make The laser determination device portion that wafer is deposited by set thickness setting value.
6. the precipitation equipment according to claim 5 for eliminating flame hydrolysis defect, it is characterised in that the laser determination The side in device portion is also equipped with showing the device of the real-time deposit thickness of wafer.
CN201720144914.4U 2016-08-31 2017-02-17 The precipitation equipment of flame hydrolysis defect can be eliminated Active CN206570406U (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020160111730A KR101702315B1 (en) 2016-08-31 2016-08-31 Deposition apparatus for flame hydrolysis to remove flaws
KR10-2016-0111730 2016-08-31

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109507772A (en) * 2018-12-04 2019-03-22 浙江富春江光电科技有限公司 Optical waveguide flame hydrolysis duration and degree of heating component

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3326774B2 (en) * 1992-03-17 2002-09-24 住友電気工業株式会社 Method and apparatus for producing oxide glass thin film
KR100446517B1 (en) * 2002-01-30 2004-09-04 삼성전자주식회사 Flame hydrolysis deposition equipment for silicon wafer fabrication
KR101176127B1 (en) * 2011-10-04 2012-08-22 주식회사 아론 Device for flame hydrolysis deposition
KR20150114049A (en) * 2014-03-31 2015-10-12 세메스 주식회사 Substrate treating apparatus and substrate treating method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109507772A (en) * 2018-12-04 2019-03-22 浙江富春江光电科技有限公司 Optical waveguide flame hydrolysis duration and degree of heating component

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