KR100392796B1 - Turntable apparatus for heating wafer - Google Patents
Turntable apparatus for heating wafer Download PDFInfo
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- KR100392796B1 KR100392796B1 KR10-2001-0042934A KR20010042934A KR100392796B1 KR 100392796 B1 KR100392796 B1 KR 100392796B1 KR 20010042934 A KR20010042934 A KR 20010042934A KR 100392796 B1 KR100392796 B1 KR 100392796B1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Resistance Heating (AREA)
Abstract
본 발명은 웨이퍼 가열장치에 관한 것으로, 재질은 흑연으로 구성되고, 상면에는 웨이퍼를 접촉시켜 지지하는 서셉터가 형성되고, 외주면에는 전류를 공급받기 위한 림(110)이 형성된 턴테이블(100), 상기 턴테이블(100)의 하부에 설치되어 전류를 공급하고, 회전력을 전달하는 회전축(200), 상기 회전축(200)를 회전시키기 위한 구동모터(300) 및 상기 턴테이블(100) 및 상기 회전축에 전류를 공급하기 위한 전원공급장치(400)을 포함하도록 구성함으로써, 웨이퍼 각부의 온도를 균일하게 가열시키는 것이 가능하도록 한 것이다.The present invention relates to a wafer heating apparatus, the material of which is composed of graphite, a susceptor for contacting and supporting the wafer on the upper surface is formed, the outer table is formed with a rim 110 for receiving a current turntable 100, the It is installed in the lower part of the turntable 100 to supply current, the rotating shaft 200 for transmitting the rotational force, the drive motor 300 for rotating the rotating shaft 200 and the current supply to the turntable 100 and the rotating shaft By including the power supply unit 400 for the purpose, it is possible to uniformly heat the temperature of each portion of the wafer.
Description
본 발명은 FHD(Flame Hydrolysis Deposition)공정에 사용되는 웨이퍼 가열장치에 관한 것으로, 특히 턴테이블 자체를 흑연으로 제작함으로써 웨이퍼 각부의 온도를 균일하게 가열시키는 것이 가능하도록 한 웨이퍼 가열용 턴테이블 장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer heating apparatus used in a FHD (Flame Hydrolysis Deposition) process, and more particularly, to a turntable apparatus for wafer heating which makes it possible to uniformly heat the temperature of each part of a wafer by manufacturing the turntable itself from graphite.
일반적으로 반도체 웨이퍼의 표면의 얇은 층을 증착하기 위해서 여러가지 증착방법과 공정이 사용되고 있다. 특히 FHD공법은 1980년대 초기 일본 NTT에서 Kawachi 등이 광섬유 제작분야에서 개발되어온 VAD(Vapor phase Axial Deposition)기술을 바탕으로 이를 실리콘 기판에 사용하여 FHD(Flame Hydrolysis Deposition)라는 실리카 광도파 박막 제작법이 개발된 것이다.Generally, various deposition methods and processes are used to deposit a thin layer on the surface of a semiconductor wafer. In particular, the FHD method is based on VAD (Vapor Phase Axial Deposition) technology developed by Kawachi et al. In NTT in Japan in the early 1980s, and used in silicon substrates to develop a silica optical waveguide thin film called FHD (Flame Hydrolysis Deposition). It is.
FHD공정은 SiCl4, GeCL4등을 H2와 O2의 수증기 화염 속에 가수분해시켜 SiO2의 미세가루(Soot)를 실리콘 기판에(융점 1400℃) 증작시키는 방법이다. FHD의 Soot는 100~1000Å정도의 미세입자로서, 이를 우수한 광 투과성을 갖는 고밀도의 투명 균질의 실리카 박막형태로 만들려면 기판에 증착된 Soot를 1350℃ 이상의 높은 온도에서 고밀화시키는 공정을 필요로 한다.In the FHD process, SiCl 4 , GeCL 4 , and the like are hydrolyzed in a steam flame of H 2 and O 2 to increase SiO 2 fine powder (Soot) on a silicon substrate (melting point 1400 ° C.). Soot of FHD is a fine particle of about 100 ~ 1000Å, in order to make it into a dense transparent homogeneous silica thin film having excellent light transmittance, it is required to densify the soot deposited on the substrate at a high temperature of more than 1350 ℃.
이러한 FHD공정에서는 반도체 웨이퍼를 소정의 온도로 가열하여 상승시킬 필요가 있는 바, 도 4 및 도 5는 이러한 종래의 웨이퍼 가열장치를 개략적으로 보인 단면도이다.In this FHD process, the semiconductor wafer needs to be heated and raised to a predetermined temperature, and FIGS. 4 and 5 are cross-sectional views schematically showing such a conventional wafer heating apparatus.
이에 도시된 바와 같이 종래의 웨이퍼 가열장치는 웨이퍼(w)를 그 상면에 접촉시켜 지지하는 서셉터(13)와 상기 서셉터(13)의 하부에 설치되어 상기 웨이퍼(w)를 가열하는 히팅코일(15)을 내부에 포함하는 가열원판(10) 및 상기 가열원판(10)에 전원을 공급하기 위한 전원공급장치(40)를 구비한다.As shown in the drawing, the conventional wafer heating apparatus includes a susceptor 13 for supporting the wafer w in contact with an upper surface thereof and a heating coil installed under the susceptor 13 to heat the wafer w. And a power supply device 40 for supplying power to the heating source plate 10 including the heating element 10 therein.
상기한 바와 같은 구성을 갖는 종래 반도체 웨이퍼 가열장치의 작용은 다음과 같다.The operation of the conventional semiconductor wafer heating apparatus having the configuration as described above is as follows.
상기 서셉터(13)의 상면에 웨이퍼(w)를 올려놓고 전원을 인가하면 상기 서셉터(13)의 하부에 설치된 히팅코일(15)의 저항으로 온도가 상승하고 가열원판(10)이 가열되어 이에 의해 웨이퍼(w)가 가열된다.When the wafer is placed on the upper surface of the susceptor 13 and power is applied, the temperature is increased by the resistance of the heating coil 15 installed at the lower part of the susceptor 13, and the heating source 10 is heated. As a result, the wafer w is heated.
그러나 상기한 바와 같은 구성으로 되는 종래 웨이퍼 가열장치는 다음과 같은 문제점이 있었다.However, the conventional wafer heating apparatus having the configuration as described above has the following problems.
FHD공정에서 실제로 생산성있는 수율을 얻기 위해서는 가열원판(10)에서 최고온도부분과 최저온도부분 사이의 온도차이가 1℃이내이어야 한다.In order to actually obtain a productive yield in the FHD process, the temperature difference between the highest temperature portion and the lowest temperature portion in the heating disc 10 should be within 1 ° C.
그러나 종래 웨이퍼 가열장치는 가열원판(10)의 내부에 배선된 히팅코일(15)이 가열원판(10)의 전체에 걸쳐 균일한 간격으로 배선된 것이 아니라 일정한 곡선을 이루면서 배선됨으로써 가열원판(10)이 전체적으로 균일하게 가열되지 못한다. 따라서 히팅코일(15)이 지나가는 부분과 그렇지 않은 부분의 최저온도의 차이가 대략 10℃정도 발생한다.However, in the conventional wafer heating apparatus, the heating source plate 10 is formed by heating the heating coil 15 wired inside the heating source plate 10 at regular intervals rather than at uniform intervals throughout the heating source plate 10. It is not heated uniformly throughout. Therefore, a difference between the minimum temperature of the portion where the heating coil 15 passes and the portion that does not pass is about 10 ° C.
이러한 온도차이는 매우 민감한 FHD공정에서 웨이퍼의 불량 및 온도제어에 어려움을 초래하고, 수율을 떨어뜨리는 등 문제가 있었다.This temperature difference causes problems such as defects in wafer defects and temperature control in a very sensitive FHD process and lowers yields.
따라서, 상기한 바와 같은 문제점을 인식하여 창출된 본 발명의 목적은 균일한 온도분포로 웨이퍼를 가열하는 웨이퍼 가열장치를 제공하는데 있다.Accordingly, an object of the present invention created by recognizing the problems described above is to provide a wafer heating apparatus for heating a wafer with a uniform temperature distribution.
도 1은 본 발명의 제 1 실시예에 따른 웨이퍼 가열용 턴테이블 장치의 구조를 개략적으로 보인 사시도.1 is a perspective view schematically showing the structure of a turntable device for wafer heating according to a first embodiment of the present invention;
도 2는 도 1에 도시된 웨이퍼 가열용 턴테이블 장치의 구조를 개략적으로 보인 단면도.2 is a cross-sectional view schematically showing the structure of a turntable device for wafer heating shown in FIG.
도 3은 본 발명의 제 2 실시예에 따른 웨이퍼 가열용 턴테이블 장치의 구조를 개략적으로 보인 단면도.3 is a cross-sectional view schematically showing the structure of a turntable apparatus for wafer heating according to a second embodiment of the present invention.
도 4는 종래 웨이퍼 가열장치의 구조를 개략적으로 보인 평면도.Figure 4 is a plan view schematically showing the structure of a conventional wafer heating apparatus.
도 5는 종래 웨이퍼 가열장치의 구조를 개략적으로 보인 종단면도.Figure 5 is a longitudinal sectional view schematically showing the structure of a conventional wafer heating apparatus.
<도면의 주요부호에 대한 간단한 설명><Brief description of the major symbols in the drawings>
100 : 턴테이블 110 : 림100: turntable 110: rim
120 : 승강수단 130 : 서셉터120: lifting means 130: susceptor
200 : 회전축 210 : 슬립링200: rotating shaft 210: slip ring
300 : 구동모터 400 : 전원공급장치300: drive motor 400: power supply device
상기한 바와 같은 본 발명의 목적을 달성하기 위하여, 재질은 흑연으로 구성되고, 상면에는 웨이퍼를 접촉시켜 지지하는 서셉터가 형성되고, 외주면에는 전류를 공급받기 위한 림이 형성된 턴테이블, 상기 턴테이블의 하부에 설치되어 전류를 공급하고, 회전력을 전달하는 회전축, 상기 회전축를 회전시키기 위한 구동모터 및 상기 턴테이블 및 상기 회전축에 전류를 공급하기 위한 전원공급장치을 포함하여 구성되는 웨이퍼 가열용 턴테이블 장치가 제공된다.In order to achieve the object of the present invention as described above, the material is composed of graphite, the upper surface is formed with a susceptor for supporting the wafer in contact, the outer peripheral surface is formed with a rim for receiving a current, the lower part of the turntable Provided in the present invention is a wafer heating turntable device including a rotating shaft for supplying current and transmitting rotational force, a drive motor for rotating the rotating shaft, and a turntable and a power supply for supplying current to the rotating shaft.
또한, 상기 턴테이블의 내부에는 추가로 가열된 반도체 웨이퍼를 들어올리기 위한 승강수단이 설치되어 있는 것이 바람직하다.In addition, it is preferable that a lifting means for lifting a further heated semiconductor wafer is provided inside the turntable.
또한, 상기 턴테이블은 중심축에서 반경방향으로 외부로 갈수록 두께가 더 두꺼워지는 것이 바람직하다.In addition, it is preferable that the turntable becomes thicker toward the outside in the radial direction from the central axis.
본 발명의 그 밖의 목적, 특정한 장점 및 신규한 특징들은 첨부된 도면들과 연관 되어지는 이하의 상세한 설명과 바람직한 실시예들로부터 더욱 분명해질 것이다.Other objects, specific advantages and novel features of the present invention will become more apparent from the following detailed description and the preferred embodiments associated with the accompanying drawings.
이하, 첨부도면에 도시한 본 발명의 실시예에 의거하여 본 발명을 상세히 설명한다.Hereinafter, the present invention will be described in detail with reference to the embodiments of the present invention shown in the accompanying drawings.
도 1은 본 발명에 의한 웨이퍼 가열용 턴테이블 장치의 일실시예를 개략적으로 도시한 사시도이고, 도 2는 도 1의 단면도이며, 도 3은 본 발명의 다른 실시예에 따른 웨이퍼 가열용 턴테이블 장치의 구조를 개략적으로 보인 사시도이다.1 is a perspective view schematically showing an embodiment of a turntable apparatus for wafer heating according to the present invention, FIG. 2 is a cross-sectional view of FIG. 1, and FIG. 3 is a turntable apparatus for wafer heating according to another embodiment of the present invention. A perspective view schematically showing the structure.
도 1 및 도 2에 도시된 바와 같이 본 발명의 웨이퍼 가열용 턴테이블 장치는 턴테이블(100), 회전축(200), 구동모터(300) 및 전원공급장치(400)를 포함하여 구성된다.1 and 2, the turntable apparatus for heating a wafer of the present invention includes a turntable 100, a rotating shaft 200, a driving motor 300, and a power supply device 400. As shown in FIG.
상기 턴테이블(100)은 종래의 것과는 달리 히팅코일이 내부에 설치되어 있지 않고 그 자체가 흑연으로 이루어져 있고, 상면에는 웨이퍼(w)를 접촉시켜 지지하는 서셉터(130)가 8개 형성되고, 그 외주면에는 전류를 공급받기 위한 금속재의 림(110), 예를들어 강재, 구리, 스텐레스강 등의 림(110)이 형성되어 있다. 또한, 상기 턴테이블(100)이 균일하게 가열되도록 제어하기 위하여 상기 턴테이블(100)에는 다수의 온도센서(미도시)가 장착되어 있다.Unlike the related art, the turntable 100 does not have a heating coil installed therein but is made of graphite. The turntable 100 has eight susceptors 130 formed on the upper surface thereof to contact and support the wafer w. On the outer circumferential surface, a rim 110 made of metal for receiving a current, for example, a rim 110 made of steel, copper, stainless steel, or the like is formed. In addition, in order to control the turntable 100 to be uniformly heated, the turntable 100 is equipped with a plurality of temperature sensors (not shown).
상기 서셉터(130)는 웨이퍼(w)의 형상과 동일한 원형의 판 형상을 가지고 있으며, 서셉터(130)의 상면 가장자리 부위에는 소정 높이 돌출된 돌출부가 링 형상으로 형성되어 있고, 지름은 웨이퍼(w)의 지름에 대응하여 4″또는 6″이다.The susceptor 130 has a circular plate shape that is the same as the shape of the wafer (w), and a protrusion protruding a predetermined height is formed in a ring shape on the upper edge portion of the susceptor 130, and the diameter of the susceptor 130 is a wafer ( corresponding to the diameter of w) is 4 ″ or 6 ″.
비록 본 실시예에서는 웨이퍼(w)를 지지하는 서셉터(130)의 갯수가 8개로, 지름은 4″또는 6″로 되어 있으나, 이는 설명을 위한 것이며, 서셉터(130)의 갯수 및 그 지름은 필요에 따라 많게 또는 크게 할 수 있다.Although in this embodiment, the number of susceptors 130 supporting the wafer w is 8 and the diameter is 4 ″ or 6 ″, this is for the purpose of explanation and the number of susceptors 130 and the diameter thereof. Can be made larger or larger as needed.
상기 림(110)은 상기 턴테이블(100)의 외주면에 형성되어 있고 중앙부분에는 전원공급장치(400)로부터 공급되는 전류를 공급받기 위한 요홈이 형성되어 있다.The rim 110 is formed on the outer circumferential surface of the turntable 100, and a recess is formed in the center to receive a current supplied from the power supply device 400.
본 실시예에서는 전원공급장치(400)로부터 전류의 공급이 상기 턴테이블 (100)에 형성된 요홈을 통해 이루어지지만 이는 설명을 위한 것이며 상기 림(110)의 다른 부위에 요홈을 형성하여 공급하거나, 슬립링(210)를 상기 턴테이블(100)의외주면에 형성하여 공급하는 것도 가능하다.In this embodiment, the supply of current from the power supply device 400 is made through the groove formed in the turntable 100, but this is for the purpose of description and to form a groove in another portion of the rim 110, or a slip ring 210 may be formed on the outer circumferential surface of the turntable 100 and supplied.
상기 턴테이블(100)의 내부에는 가열된 웨이퍼(w)를 들어올리기 위한 승강수단(120)을 설치하는 것이 보다 바람직하다. 상기 승강수단은 예를 들어, 도 2에 도시된 바와 별도의 배선(230)을 통해 솔레노이드로 on-off 되는 것이다.More preferably, elevating means 120 is provided inside the turntable 100 to lift the heated wafer w. For example, the elevating means is on-off to the solenoid through a separate wiring 230 as shown in FIG.
상기 회전축(200)은 상기 턴테이블(100)에 전류 및 회전력을 공급하기 위한 것으로 일단은 상기 턴테이블(100)의 하부에 고정 설치되고, 타단은 상기 구동모터 (300)의 일측에 열결된다.The rotating shaft 200 is for supplying current and rotational force to the turntable 100, one end of which is fixed to the lower part of the turntable 100, and the other end of which is connected to one side of the driving motor 300.
상기 구동모터(300)는 베이스(700)상에 일측이 고정 설치되고, 타측에는 상기 회전축(200)과 연결되어 상기 회전축(200)을 회전시킨다. 그리고 상기 구동모터 (300)와 회전축(200) 사이에는 감속기(미도시)가 설치되는 것이 바람직하다.One side of the driving motor 300 is fixedly installed on the base 700, and the other side is connected to the rotating shaft 200 to rotate the rotating shaft 200. And a reducer (not shown) is preferably installed between the drive motor 300 and the rotating shaft 200.
본 실시예에서는 상기 구동모터(300)의 일측에 상기 회전축(200)을 연결하여 회전시키도록 구성되었으나, 상기 구동모터(300)의 일측에 풀리를 형성하여 이와 상기 회전축(200)의 연결하여 회전시킬 수도 있다.In this embodiment, the rotating shaft 200 is connected to one side of the driving motor 300 to rotate, but a pulley is formed on one side of the driving motor 300 to connect and rotate the rotating shaft 200. You can also
상기 전원공급장치(400)의 일측은 상기 턴테이블(100)의 외주면에 형성된 림(110)과 연결되고 타측은 상기 회전축(200)과 회전 가능하게 연결된다.One side of the power supply device 400 is connected to the rim 110 formed on the outer circumferential surface of the turntable 100 and the other side is rotatably connected to the rotation shaft 200.
상기 전원공급장치(400)에서 상기 회전하는 회전축(200)으로 전류를 공급하기 위하여 상기 회전축(200)의 외주면에는 슬립링(210)을 형성하고, 그 내부에는 상기 턴테이블(100)로 전류를 공급하기 위한 선(230)을 배선하는 것이 바람직하다.In order to supply current from the power supply device 400 to the rotating shaft 200, a slip ring 210 is formed on an outer circumferential surface of the rotating shaft 200, and a current is supplied to the turntable 100 therein. It is preferable to wire the line 230 for this purpose.
또한, 도 3에 도시된 바와 같이 본 발명의 다른 실시예에 의한 상기 턴테이블(100)은 반경방향으로 외부로 갈수록 두께가 더 두꺼워지는 것이 보다 바람직하다. 비록 두께를 두껍게 하지만 서셉터(130)의 하부면은 평면을 유지하는 것이 바람직하므로 상기 턴테이블(100)의 상면은 평활하게 유지하고 하면에 구배, 예를들어 포물선 곡선의 일부분를 주어 두께를 변화시킨다. 이는 턴테이블(100)의 발열량이 단위체적과 전류의 흐름에 비례하게 되는데, 턴테이블(100)의 중심영역으로 갈수록 전류의 밀도가 높아지기 때문이다. 구배는 보다 균일한 발열을 위해 상기 턴테이블(100)의 직경, 두께, 회전속도 및 전원 등에 따라 적절히 보상할 수 있다.In addition, as shown in FIG. 3, the turntable 100 according to another embodiment of the present invention is more preferably thickened toward the outside in the radial direction. Although the thickness of the susceptor 130 is preferably flat, the lower surface of the susceptor 130 is kept flat, and the top surface of the turntable 100 is kept smooth and the bottom surface of the turntable 100 is given a gradient, for example, a part of a parabolic curve to change the thickness. This is because the heat generation amount of the turntable 100 is proportional to the unit volume and the flow of the current, because the density of the current increases toward the center region of the turntable 100. Gradient can be properly compensated according to the diameter, thickness, rotation speed and power of the turntable 100 for more uniform heat.
상기한 바와 같은 구조로 되어 있는 본 발명에 의한 웨이퍼 가열용 턴테이블 장치의 작용을 설명하면 다음과 같다.The operation of the turntable apparatus for wafer heating according to the present invention having the structure as described above is as follows.
가열하려는 웨이퍼(w)가 상기 턴테이블(100)의 서셉터(130)에 로봇아암(미도시)등에 의해 자동으로 얹혀지면, 상기 전원공급장치(400)에 의해 (+)전류는 상기 턴테이블(100)의 외주면에 형성된 림(110)에, (-)전류는 상기 회전축(200)에 공급된다. (+)에서 (-)로 전류가 흐름에 따라 상기 턴테이블(100)내에 균일하게 분포하는 흑연에 의해 저항열이 발생하므로써, 상기 턴테이블(100)이 균일하게 가열되고, 그 상면 서셉터(130)에 접촉 지지되는 웨이퍼(w)가 균일하게 가열된다. 이때 상기 턴테이블(100)은 상기 턴테이블(100)에 장착된 온도센서(미도시)의 피드백 제어에 의해 100℃∼200℃ 사이의 온도범위로 제어된다.When the wafer w to be heated is automatically placed on the susceptor 130 of the turntable 100 by a robot arm (not shown), a positive current is supplied by the power supply 400 to the turntable 100. In the rim 110 formed on the outer circumferential surface of), a negative current is supplied to the rotating shaft 200. As the resistance heat is generated by graphite uniformly distributed in the turntable 100 as a current flows from (+) to (-), the turntable 100 is uniformly heated, and the top susceptor 130 The wafer w contacted and supported by is heated uniformly. At this time, the turntable 100 is controlled to a temperature range between 100 ° C and 200 ° C by feedback control of a temperature sensor (not shown) mounted on the turntable 100.
가열되어 증착이 완료된 웨이퍼(w)는 토치(500)가 후퇴하고, 상기 턴테이블 (100)의 내부에 설치된 승강수단(130)에 의해 들어올려진 다음 로봇아암(미도시)에 의해 다음 공정으로 옮겨진다.The wafer w, which has been heated and completed deposition, is retracted by the torch 500 and is lifted by the lifting means 130 installed in the turntable 100 and then moved to the next process by a robot arm (not shown). .
이때, 상기 턴테이블(100)의 두께를 중심부에서 외부로 갈수록 두껍게 하여상기 턴테이블(100)전체를 보다 더 균일하게 가열할 수 있게 된다.At this time, the thickness of the turntable 100 becomes thicker from the center to the outside so that the entire turntable 100 can be heated more uniformly.
상기한 바와 같이 본 발명에 의한 반도체 가열용 턴테이블 장치는 턴테이블의 발열이 균일한 흑연분포와 전류밀도에 비례하기 때문에 ±1℃이내의 편차로 균일하게 가열됨으로써, 웨이퍼 각부의 온도를 균일하게 상승시키는 것이 가능하다.As described above, in the turntable apparatus for semiconductor heating according to the present invention, since the heat generation of the turntable is proportional to the uniform graphite distribution and the current density, it is uniformly heated with a deviation within ± 1 ° C, thereby uniformly raising the temperature of each part of the wafer. It is possible.
비록 본 발명이 상기에서 언급한 바람직한 실시예와 관련하여 설명되어졌지만, 발명의 요지와 범위로부터 벗어남이 없이 다양한 수정이나 변형을 하는 것이 가능하다. 따라서 첨부된 특허청구범위는 본 발명의 요지에 속하는 어떠한 수정이나 변형도 포함할 것이다.Although the present invention has been described with reference to the above-mentioned preferred embodiments, it is possible to make various modifications or variations without departing from the spirit and scope of the invention. Accordingly, the appended claims will include any modifications or variations that fall within the spirit of the invention.
Claims (5)
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| KR102229196B1 (en) | 2019-10-23 | 2021-03-25 | 한재형 | Press material transfer system with turntable |
| KR20220064745A (en) | 2020-11-12 | 2022-05-19 | 한재형 | Multi-process press automation system and method using multi-axis robot |
| KR20240079088A (en) | 2022-11-28 | 2024-06-04 | 주식회사 디이엔티 | Separated heat source control jig module for temperature management of base material |
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| JPH08191096A (en) * | 1995-01-09 | 1996-07-23 | Sumitomo Metal Ind Ltd | Jig for semiconductor |
| KR970023694A (en) * | 1995-10-05 | 1997-05-30 | 양승택 | Substrate Heating Mechanism |
| JPH11251249A (en) * | 1998-02-27 | 1999-09-17 | Kyocera Corp | Method of forming semiconductor film |
| KR20010008844A (en) * | 1999-07-05 | 2001-02-05 | 윤종용 | A heating apparatus for a semiconductor device fabrication installation |
| JP2001068415A (en) * | 1999-08-24 | 2001-03-16 | Nippon Sanso Corp | Vapor-phase growth device |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08191096A (en) * | 1995-01-09 | 1996-07-23 | Sumitomo Metal Ind Ltd | Jig for semiconductor |
| KR970023694A (en) * | 1995-10-05 | 1997-05-30 | 양승택 | Substrate Heating Mechanism |
| JPH11251249A (en) * | 1998-02-27 | 1999-09-17 | Kyocera Corp | Method of forming semiconductor film |
| KR20010008844A (en) * | 1999-07-05 | 2001-02-05 | 윤종용 | A heating apparatus for a semiconductor device fabrication installation |
| JP2001068415A (en) * | 1999-08-24 | 2001-03-16 | Nippon Sanso Corp | Vapor-phase growth device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| KR102229196B1 (en) | 2019-10-23 | 2021-03-25 | 한재형 | Press material transfer system with turntable |
| KR20220064745A (en) | 2020-11-12 | 2022-05-19 | 한재형 | Multi-process press automation system and method using multi-axis robot |
| KR20240079088A (en) | 2022-11-28 | 2024-06-04 | 주식회사 디이엔티 | Separated heat source control jig module for temperature management of base material |
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