CN206558503U - A kind of CMOS integrated circuits, ambient light sensor for being used to suppress current mirror leakage current - Google Patents
A kind of CMOS integrated circuits, ambient light sensor for being used to suppress current mirror leakage current Download PDFInfo
- Publication number
- CN206558503U CN206558503U CN201720019074.9U CN201720019074U CN206558503U CN 206558503 U CN206558503 U CN 206558503U CN 201720019074 U CN201720019074 U CN 201720019074U CN 206558503 U CN206558503 U CN 206558503U
- Authority
- CN
- China
- Prior art keywords
- current mirror
- oxide
- metal
- current
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn - After Issue
Links
Landscapes
- Thin Film Transistor (AREA)
- Light Receiving Elements (AREA)
Abstract
The utility model discloses a kind of CMOS integrated circuits for being used to suppress current mirror leakage current, including current mirror amplifying circuit and suppression current mirror electric leakage current circuit.The utility model further discloses a kind of ambient light sensor circuit for the current circuit that leaked electricity containing above-mentioned suppression current mirror.The utility model suppresses current mirror electric leakage current circuit by setting, first order current mirror leakage current and second level current mirror leakage current for current mirror amplifying circuit provide other paths, make current mirror amplifying circuit first order current mirror leakage current and second level current mirror leakage current will not enter current mirror amplifying circuit third level current mirror input, so as to will not be amplified and be exported by third level current mirror.Thus it is guaranteed that the low-noise factor of current mirror amplifying circuit so that circuit mirror amplifying circuit is adapted to higher requirement.
Description
Technical field
The utility model is related to technical field of integrated circuits.It is used to suppress current mirror leakage current more particularly, to one kind
CMOS integrated circuits and ambient light sensor comprising it.
Background technology
Ambient light sensor (ALS) can perceive ambient light situation, and inform that process chip automatically adjusts the display back of the body
Brightness, reduces the power consumption of product.Ambient light sensor includes the photoelectric tube and multistage current amplifier of detection ambient light, works as light
Ambient light is converted into photoelectric current by fulgurite, and multistage current mirror amplifier after photoelectric current amplification to exporting, so as to realize that light-electricity turns
Change.In actual life, it is required for using in television set, computer monitor, infrared camera, mobile phone, digital camera, intelligent switch etc.
To ambient light sensor.
Traditional current mirror amplifier can also amplify previous stage electric current while the photoelectric current that photoelectric tube is converted into is amplified
The leakage current of mirror, the current mirror leakage current per one-level can all be amplified by rear class current mirror, and the leakage current after multistage amplification is cumulative is not
It can ignore.For example, when the ambient light illumination for needing to detect is very faint, the photoelectric current of photoelectric tube conversion is very faint,
The exaggerated leakage current signal for amplifying the effective current signal magnitude of output by current mirror amplifier and exporting is very nearly the same,
It is even smaller than leakage current.So, ambient light sensor under faint illumination may output error result, influence ambient light
The use of sensor.
Traditional ambient light sensor is as shown in figure 1, including photoelectric switching circuit and current mirror amplifying circuit.Ambient light is passed
Sensor includes photoelectric tube D0, D1, PMOS P0, P1, P2, P3, P4, P5 and NMOS tube N0, N1, wherein, PMOS S ends are electrically connected
Connect identical high potential, PMOS B ends electrical connection identical high potential VDD, NMOS tube S ends electrical connection identical low potential
GND, NMOS pipe B end electrical connection low potential GND.P0 and P1 are a pair of current mirrors, and (W/L)P0/(W/L)P1=1；P2 and P3
It is a pair of current mirrors, and K1=(W/L)P3/(W/L)P2；P4 and P5 are a pair of current mirrors, and K3=(W/L)P5/(W/L)P4；N0
It is a pair of current mirrors with N1, and K2=(W/L)N1/(W/L)N0；D0 with D1 areas are identical, and D0 covers light tight with metal, D1
The veil such as no metal can be with printing opacity above.D0 positive pole electrical connection low potential GND, D0 negative pole electrically connects P0 D ends, P0's
G ends electrically connect P0 D ends, and P1 G ends electrically connect P0 G ends, and P1 D ends electrically connect D1 negative pole, and D1 positive pole electrical connection is low
Current potential GND, P2 G ends and D ends short circuit and the negative pole for electrically connecting D1, P3 G ends electrically connect P2 G ends, P3 D ends electrical connection N0
D ends, N0 D ends and N0 G ends short circuit electrically connect N1 G ends, and N1 D ends electrically connect P4 D ends and G ends, P5 G ends
Electrically connect P4 G ends, P5 D ends electrical connection output port Iout。
When ambient light sensor works, under conditions of having illumination, illumination is converted into photoelectric current I by D10, by multistage electricity
Flow the photoelectric current I of mirror amplificationlight=K1*K2*K3*I0.The noise current I of D1 in itselfdark1By D0 noise current Idark0Support
Disappear, Idark0=Idark1, P0 with P1 sizes are identical.Metal-oxide-semiconductor has the electric leakage to low potential GND or high potential VDD in itself, and
It can be amplified by the leakage current of metal-oxide-semiconductor raceway groove by current mirror, the amplification of the leakage current of prime adds up again final from output end and is put
Big photoelectric current is exported together.The multiple that the current mirror electric leakage of the wherein first order is exaggerated is maximum, is also the total leakage current of output
Main source, the current mirror of rear class also has electric leakage is still more much smaller than the electric leakage of first order current mirror can ignore.From P2 ends stream
The leakage current gone out is ILP2, the leakage current flowed out from P3 ends is ILP3, the leakage current of first order current mirror is (K1*ILP2+ILP3) quilt
The noise current exported after multistage current mirror amplification from P5 D ends is Ileak≈K2*K3*(K1*ILP2+ILP3), total electricity of output
Flow Iout=Ileak+Ilight.Under faint illumination, I0It is extremely faint, usually pA grades (10-12A), then output end IleakWith
IlightCompare, both approximate or IleakIt is bigger, then the I exportedoutDeviation is serious, causes optical sensor cisco unity malfunction.
Accordingly, it is desirable to provide a kind of CMOS integrated circuits for being used to suppress current mirror leakage current.
The content of the invention
A purpose of the present utility model is to provide a kind of CMOS integrated circuits for being used to suppress current mirror leakage current.
To reach above-mentioned purpose, the utility model uses following technical proposals：
A kind of CMOS integrated circuits for being used to suppress current mirror leakage current, including current mirror amplifying circuit and suppression current mirror
Leak electricity current circuit, wherein
Current mirror amplifying circuit includes the first current mirror for being sequentially connected electrically to, the second current mirror pair and the 3rd current mirror
Right, the first current mirror is to including two metal-oxide-semiconductors that channel type is the first raceway groove, the second current mirror is to being the including channel type
Two metal-oxide-semiconductors of two raceway grooves, the 3rd current mirror is to including two metal-oxide-semiconductors of the channel type for the first raceway groove；Suppress current mirror leakage
Current circuit includes the 4th current mirror that is sequentially connected electrically to, the 5th current mirror pair and the 6th current mirror pair, the 4th current mirror pair
Including two metal-oxide-semiconductors that channel type is the first raceway groove, the 5th current mirror is to including two MOSs of the channel type for the second raceway groove
Pipe, the 6th current mirror is to including two metal-oxide-semiconductors of the channel type for the first raceway groove；
Each current mirror is to including the first metal-oxide-semiconductor and the second metal-oxide-semiconductor, the grid of the first metal-oxide-semiconductor and the second metal-oxide-semiconductor grid phase
Drain the input being connected as corresponding current mirror pair after even with the first metal-oxide-semiconductor；The drain electrode of second metal-oxide-semiconductor is used as corresponding current mirror pair
Output；The source electrode of the source electrode of first metal-oxide-semiconductor and the second metal-oxide-semiconductor connects high potential or low electricity after being connected according to channel type selection
Position；
The input of first current mirror pair is connected with photoelectric switching circuit output end, and output end is defeated with the second current mirror pair
Enter end to be connected；The input of 3rd current mirror pair is connected with the output end of the second current mirror pair, and output end is CMOS integrated circuits
Output end；The input of 4th current mirror pair is hanging, and output end is connected with the input of the 5th current mirror pair；6th current mirror
To input be connected with the output end of the 5th current mirror pair, output end is connected with the input of the 3rd current mirror pair；
Wherein the first raceway groove is opposite with the channel type of the second raceway groove.
Preferably, the first raceway groove is P-channel, and the second raceway groove is N-channel；Or first raceway groove be N-channel, the second raceway groove be P
Raceway groove.
It is further preferred that when the first raceway groove is P-channel, the second raceway groove is N-channel, the first, the three, the 4th and the 6th electricity
The source electrode of the source electrode and the second metal-oxide-semiconductor that flow the first metal-oxide-semiconductor of mirror pair, which is connected, is followed by high level, second and the 5th current mirror pair the
The source electrode of the source electrode of one metal-oxide-semiconductor and the second metal-oxide-semiconductor, which is connected, is followed by low level；
When the first raceway groove is N-channel, the second raceway groove is P-channel, the first of the first, the three, the 4th and the 6th current mirror pair
The source electrode of the source electrode of metal-oxide-semiconductor and the second metal-oxide-semiconductor, which is connected, is followed by low level, second and the 5th current mirror pair the first metal-oxide-semiconductor source
Pole is connected with the source electrode of the second metal-oxide-semiconductor is followed by high level.
Preferably, the first current mirror is to for first order Current amplifier；Second current mirror is to for second level Current amplifier；
3rd current mirror is to for third level Current amplifier.
Preferably, the 4th current mirror is to for first order drain current suppressing；5th current mirror is to for second level leakage current
Suppress；6th current mirror is to for third level drain current suppressing.
Another purpose of the present utility model, which is that offer is a kind of, includes the ambient light sensor of above-mentioned CMOS integrated circuits,
The sensor is also included by the 7th current mirror to, the photoelectric switching circuit that constitutes of photoelectric tube and hidden pipe；
7th current mirror is to including the first metal-oxide-semiconductor and the second metal-oxide-semiconductor that channel type is the first raceway groove, the 7th current mirror pair
Drain phase after the grid of first metal-oxide-semiconductor and the 7th current mirror are connected to the second metal-oxide-semiconductor grid with the 7th current mirror to the first metal-oxide-semiconductor
Even and through photoelectric tube connect high level/low level；Drain electrode of 7th current mirror to the second metal-oxide-semiconductor is used as the defeated of photoelectric switching circuit
Go out and connect high level/low level through hidden pipe；7th current mirror is to the source electrode and the 7th current mirror of the first metal-oxide-semiconductor to the 2nd MOS
The source electrode of pipe connects high potential or low potential after being connected according to channel type selection.
Preferably, photoelectric tube is used to convert optical signals into current signal；Hidden pipe is used for the dark current for offsetting photoelectric tube.
Preferably, when the first raceway groove is P-channel, the second raceway groove is N-channel, the source of the first metal-oxide-semiconductor of the 7th current mirror pair
Pole is connected with the source electrode of the second metal-oxide-semiconductor is followed by high level, and the positive pole of photoelectric tube and hidden pipe connects low level；
When the first raceway groove is N-channel, the second raceway groove is P-channel, the source electrode of the first MOS pipes of the 7th current mirror pair and the
The source electrode of two metal-oxide-semiconductors, which is connected, is followed by low level, and the negative pole of photoelectric tube and hidden pipe connects high level.
The beneficial effects of the utility model are as follows：
The utility model suppresses current mirror electric leakage current circuit by setting, and is the first order current mirror of current mirror amplifying circuit
Leakage current and second level current mirror leakage current provide other paths, make the first order current mirror leakage current of current mirror amplifying circuit
The input of the third level current mirror of current mirror amplifying circuit will not be entered with second level current mirror leakage current, so that will not be by the
Tertiary current mirror amplifies and exported.Thus it is guaranteed that the low-noise factor of current mirror amplifying circuit so that circuit mirror amplifying circuit
It is adapted to higher requirement.
Brief description of the drawings
Embodiment of the present utility model is described in further detail below in conjunction with the accompanying drawings.
Fig. 1 shows existing ambient light sensor circuit diagram.
Fig. 2 shows that the ambient light sensing circuit diagram of leakage current can be suppressed in embodiment 1.
Fig. 3 shows that the ambient light sensing circuit diagram of leakage current can be suppressed in embodiment 2.
Embodiment
In order to illustrate more clearly of the utility model, the utility model is done into one with reference to preferred embodiments and drawings
The explanation of step.Similar part is indicated with identical reference in accompanying drawing.It will be appreciated by those skilled in the art that below
Specifically described content is illustrative and be not restrictive, and protection domain of the present utility model should not be limited with this.
The utility model provides a kind of CMOS integrated circuits for being used to suppress current mirror leakage current, including：Current mirror amplifies
Circuit and suppression current mirror electric leakage current circuit.Wherein, current mirroring circuit includes PMOS current mirrors and NMOS current mirrors, suppresses electric current
Mirror electric leakage current circuit includes PMOS current mirrors and NMOS current mirrors.Suppress current mirror electric leakage current circuit first order current mirror and electricity
Flow mirror amplifying circuit first order current mirror type identical, i.e., be all PMOS current mirrors or be all NMOS current mirrors.Suppress electric current
Mirror leakage current circuit second stage current mirror is identical with current mirror amplifying circuit second level current mirror.Suppress current mirror electric leakage current circuit
Third level current mirror is identical with current mirror amplifying circuit third level current mirror.The input of current mirror amplifying circuit is that current mirror is put
The input of big circuit first order current mirror, the output end of current mirror amplifying circuit is the third level electric current of current mirror amplifying circuit
The output end of mirror, the input for suppressing current mirror electric leakage current circuit is that first order current mirror input is hanging.Suppress current mirror leakage
The output end of current circuit is the third level current mirror outputs for suppressing current mirror electric leakage current circuit, suppresses current mirror leakage current electricity
The second level current mirror outputs connection of the third level current mirror outputs and current mirror amplifying circuit on road, and put with current mirror
The 3rd current mirror input connection of big circuit.
Specifically, the utility model provides a kind of CMOS integrated circuits for being used to suppress current mirror leakage current, including electric current
Mirror amplifying circuit and suppression current mirror electric leakage current circuit, wherein current mirror amplifying circuit include the first current mirror being sequentially connected electrically
To, the second current mirror pair and the 3rd current mirror pair, the first current mirror to including two metal-oxide-semiconductors that channel type is the first raceway groove,
Second current mirror is to including two metal-oxide-semiconductors that channel type is the second raceway groove, the 3rd current mirror is to being first including channel type
Two metal-oxide-semiconductors of raceway groove；Suppressing current mirror electric leakage current circuit includes the 4th current mirror that is sequentially connected electrically to, the 5th current mirror pair
With the 6th current mirror pair, the 4th current mirror to including channel type be the first raceway groove two metal-oxide-semiconductors, the 5th current mirror to including
Channel type is two metal-oxide-semiconductors of the second raceway groove, and the 6th current mirror is to including two metal-oxide-semiconductors of the channel type for the first raceway groove；
Each current mirror to including the first metal-oxide-semiconductor and the second metal-oxide-semiconductor, the grid of the first metal-oxide-semiconductor and the second metal-oxide-semiconductor grid be connected after with the
The input that the drain electrode of one metal-oxide-semiconductor is connected as corresponding current mirror pair；The drain electrode of second metal-oxide-semiconductor as corresponding current mirror pair output；
The source electrode of the source electrode of first metal-oxide-semiconductor and the second metal-oxide-semiconductor connects high potential or low potential after being connected according to channel type selection；First
The input of current mirror pair is connected with photoelectric switching circuit output end, and output end is connected with the input of the second current mirror pair；The
The input of three current mirrors pair is connected with the output end of the second current mirror pair, and output end is the output end of CMOS integrated circuits；The
The input of four current mirrors pair is hanging, and output end is connected with the input of the 5th current mirror pair；The input of 6th current mirror pair
It is connected with the output end of the 5th current mirror pair, output end is connected with the input of the 3rd current mirror pair；Wherein the first raceway groove and
The channel type of two raceway grooves is opposite.
Embodiment 1
As shown in Fig. 2 in the present embodiment, the first raceway groove is P-channel, the second raceway groove is N-channel.
The cmos circuit for the suppression current mirror leakage current that the present embodiment is provided includes photoelectric switching circuit a, current mirror and amplified
Circuit b and suppression current mirror electric leakage current circuit c.
Photoelectric switching circuit a includes photoelectric tube D0, photoelectric tube D1, PMOS P0, P1, D0 positive pole electrical connection low potential
GND, D0 negative pole electrically connect P0 D ends, and P0 G ends electrically connect P0 D ends, and P1 G ends electrically connect P0 G ends, P1 D ends
Electrically connect D1 negative pole.D0 with D1 areas are identical, and D0 covers light tight with shielding layers such as metals, does not have shielding layer above D1
Can be with printing opacity, P0 and P1 are a pair of current mirrors, (W/L)P0/(W/L)P1=1.
Current mirror amplifying circuit b includes PMOS P2, P3, P4, P5, and NMOS tube N0, N1, all PMOS S ends electricity
Identical high potential VDD, all PMOS B ends electrical connection identical high potential VDD are connected, all NMOS tube S ends are electrically connected
Meet low potential GND, all NMOS tube B ends electrical connection low potential GND.P0 and P1 are a pair of current mirrors, (W/L)P0/(W/L)P1
=1, P2 and P3 are a pair of current mirrors, K1=(W/L)P3/(W/L)P2, P4 and P5 are a pair of current mirrors, K3=(W/L)P5/(W/
L)P4, N0 and N1 are a pair of current mirror K2=(W/L)N1/(W/L)N0, P2 G ends and D ends short circuit and the negative pole for electrically connecting D1, P3
G ends electrically connect P2 G ends, P3 D ends electrically connect N0 D ends, N0 D ends and N0 G ends short circuit, N1 G ends electrical connection N0
G ends, N1 D ends electrically connect P4 D ends and G ends, and P5 G ends electrically connect P4 G ends, P5 D ends electrical connection output port
Iout。
Suppressing current mirror electric leakage current circuit c includes PMOS P2c, P3c, P4c and P5c, NMOS pipes N0c and N1c.It is all
The electrical connection of PMOS S ends high potential VDD, all PMOS B ends electrical connection high potential VDD, all NMOS tube S ends electricity
Connect low potential GND, all NMOS tube B ends electrical connection low potential GND.P2c G ends electrical connection P2c D ends and P3c G
End and hanging, P3c D ends electrical connection N0c D ends and G ends, N1c G ends electrical connection N0c G ends, N1c D ends electrical connection
P4c D ends and G ends, P5c G ends electrically connect P4c G ends, and P5c D ends electrically connect N1 D ends.P2c and P3c are a pair of electricity
Flow mirror K1=(W/L)P3c/(W/L)P2c, wide length is identical with P2, P3.N0c and N1c are a pair of current mirrors, K2c=(W/L)N1c/
(W/L)N0c, wide length is identical with N0, N1.P5c and P4c are a pair of current mirror K3c=(W/L)P5c/(W/L)P4c, wide length and P4, P5
It is identical.
In the present embodiment, the first metal-oxide-semiconductor of the first current mirror pair is P2, and the second metal-oxide-semiconductor of the first current mirror pair is P3；
First metal-oxide-semiconductor of the second current mirror pair is N0, and the 2nd MOS pipes of the second current mirror pair are N1；The first of 3rd current mirror pair
Metal-oxide-semiconductor is P4, and the second metal-oxide-semiconductor of the 3rd current mirror pair is P5；First metal-oxide-semiconductor of the 4th current mirror pair is P2c, the 4th current mirror
To the second metal-oxide-semiconductor be P3c；First metal-oxide-semiconductor of the 5th current mirror pair is N0c, and the second metal-oxide-semiconductor of the 5th current mirror pair is
N1c；First metal-oxide-semiconductor of the 6th current mirror pair is P4c, and the second metal-oxide-semiconductor of the 6th current mirror pair is P5c；7th current mirror pair
First metal-oxide-semiconductor is P0, and the second metal-oxide-semiconductor of the 7th current mirror pair is P1.D1 is photoelectric tube, and D2 is hidden pipe.
The CMOS integrated circuit operation principles for suppressing current mirror leakage current that the present embodiment is provided are as follows：D0 and D1
Area is identical, the leakage current I that D1 is produceddark1The leakage current I produced with D0dark0Equal, P0 with P1 sizes are identical.It is solid at some
Under fixed illumination condition, illumination is converted into photoelectric current I by D10.Flow through the electric current I at P3 D endsP3Include two parts electric current：One
It is the leakage current I of current mirror in itself to divideLM1=K1*ILP2+ILP3, another part is photoelectric current I0.So flowed out from P3 D ends
Electric current IM1=K1*I0+(K1*ILP2+ILP3), wherein ILP3It is the leakage currents of P3 in itself, the electric current for flowing through N1 D ends is IM2=
K2*(IM1+ILN0)+ILN1, wherein, ILN0It is the leakage currents of N0 in itself, ILN1It is the leakage currents of N1 in itself.Then flowed out from N1 D ends
Leakage current ILM2=K1*K2*ILP2+K2*(ILP3+ILN0)+ILN1.Suppress current mirror electric leakage current circuit c analog currents mirror amplification
Circuit b leakage current generation mechanism, circuit structure is identical, and current mirror ratio is identical so that the prime flowed out from P5c D ends adds
Itself leakage current ILM2c=ILM2It is equal, then ILM2It may not flow into P4 and will not also be exaggerated and enter output port.The electricity of final output
Flow Iout=K1*K2*K3*I0+K3*ILP4+ILP5, (ILP4It is the leakage currents of P4 in itself, ILP5It is the leakage currents of P5 in itself) wherein
Ilight=K1*K2*K3*I0, Ileak=K3*ILP4+ILP5, IlightCompare IleakIt is much bigger.The result of flow checking is as follows：Amplification
The test result of multiple K1*K2*K3=100000 circuit structure is shown, under faint illumination condition, output end output
IlightIt is uA (10-6A the circuit I of Traditional photovoltaic ambient light sensor in) rank, Fig. 1leakAlso in uA (10-6A) rank, Ilight
And IleakIt is close.And for the I for the CMOS integrated circuits for suppressing current mirror leakage current in Fig. 2leakIt is nA (10-9A) rank, it is defeated
The total current I gone outoutIt is uA (10-6A) level, IlightIt is IleakMore than hundred times, IleakIt can ignore, leakage current no longer has influence on
The result of output current, ambient light sensor can be in illumination very weak local normal work.
Embodiment 2
As shown in figure 3, in the present embodiment, the first raceway groove is N-channel, the second raceway groove is P-channel.
It should be noted that in the utility model, current mirror amplifying circuit series should not be limited to three-level, equally, suppress electricity
Flowing mirror electric leakage current circuit should be corresponding with current mirror amplifying circuit series.
Obviously, above-described embodiment of the present utility model is only intended to clearly illustrate the utility model example, and
It is not the restriction to embodiment of the present utility model, for those of ordinary skill in the field, in described above
On the basis of can also make other changes in different forms, all embodiments can not be exhaustive here,
It is every to belong to obvious changes or variations that the technical solution of the utility model extends out still in of the present utility model
The row of protection domain.
Claims (8)
1. a kind of CMOS integrated circuits for being used to suppress current mirror leakage current, it is characterised in that the circuit is put including current mirror
Big circuit and suppression current mirror electric leakage current circuit, wherein
Current mirror amplifying circuit includes the first current mirror for being sequentially connected electrically to, the second current mirror pair and the 3rd current mirror pair, institute
The first current mirror is stated to including two metal-oxide-semiconductors that channel type is the first raceway groove, second current mirror is to including channel type
For two metal-oxide-semiconductors of the second raceway groove, the 3rd current mirror is to including two metal-oxide-semiconductors of the channel type for the first raceway groove；Suppress
Current mirror electric leakage current circuit includes the 4th current mirror that is sequentially connected electrically to, the 5th current mirror pair and the 6th current mirror pair, described
4th current mirror is to including two metal-oxide-semiconductors that channel type is the first raceway groove, the 5th current mirror to being including channel type
Two metal-oxide-semiconductors of the second raceway groove, the 6th current mirror is to including two metal-oxide-semiconductors of the channel type for the first raceway groove；
Each current mirror is to including the first metal-oxide-semiconductor and the second metal-oxide-semiconductor, the grid of first metal-oxide-semiconductor and the second metal-oxide-semiconductor grid
Drain the input being connected as corresponding current mirror pair after being extremely connected with the first metal-oxide-semiconductor；The drain electrode of second metal-oxide-semiconductor is used as corresponding current
The output of mirror pair；The source electrode of the source electrode of first metal-oxide-semiconductor and the second metal-oxide-semiconductor connects high potential or low after being connected according to channel type selection
Current potential；
The input of first current mirror pair is connected with photoelectric switching circuit output end, and output end is defeated with the second current mirror pair
Enter end to be connected；The input of 3rd current mirror pair is connected with the output end of the second current mirror pair, and output end is the CMOS
The output end of integrated circuit；The input of 4th current mirror pair is hanging, output end and the input phase of the 5th current mirror pair
Even；The input of 6th current mirror pair is connected with the output end of the 5th current mirror pair, output end and the 3rd current mirror pair
Input is connected；
Wherein the first raceway groove is opposite with the channel type of the second raceway groove.
2. CMOS integrated circuits according to claim 1, it is characterised in that
First raceway groove is P-channel, and the second raceway groove is N-channel；Or
First raceway groove is N-channel, and the second raceway groove is P-channel.
3. CMOS integrated circuits according to claim 2, it is characterised in that described
When the first raceway groove is P-channel, the second raceway groove is N-channel, the first metal-oxide-semiconductor of the first, the three, the 4th and the 6th current mirror pair
Source electrode and the source electrode of the second metal-oxide-semiconductor be connected and be followed by high level, second and the 5th current mirror pair the first metal-oxide-semiconductor source electrode and the
The source electrode of two metal-oxide-semiconductors, which is connected, is followed by low level；
When the first raceway groove is N-channel, the second raceway groove is P-channel, the first metal-oxide-semiconductor of the first, the three, the 4th and the 6th current mirror pair
Source electrode and the source electrode of the second metal-oxide-semiconductor be connected and be followed by low level, second and the 5th current mirror pair the first metal-oxide-semiconductor source electrode and the
The source electrode of two metal-oxide-semiconductors, which is connected, is followed by high level.
4. CMOS integrated circuits according to claim 1, it is characterised in that first current mirror is to for first order electricity
Banish big；Second current mirror is to for second level Current amplifier；3rd current mirror is to for third level Current amplifier.
5. CMOS integrated circuits according to claim 1, it is characterised in that the 4th current mirror for the first order to leaking
Electric current suppresses；5th current mirror is to for second level drain current suppressing；6th current mirror is to for third level drain current suppressing.
6. include the ambient light sensor of the CMOS integrated circuits any one of claim 1-5, it is characterised in that described
Sensor is also included by the 7th current mirror to, the photoelectric switching circuit that constitutes of photoelectric tube and hidden pipe；
7th current mirror is to including the first metal-oxide-semiconductor and the second metal-oxide-semiconductor that channel type is the first raceway groove, the 7th current mirror pair
Drain phase after the grid of first metal-oxide-semiconductor and the 7th current mirror are connected to the second metal-oxide-semiconductor grid with the 7th current mirror to the first metal-oxide-semiconductor
Even and through photoelectric tube connect high level/low level；Drain electrode of 7th current mirror to the second metal-oxide-semiconductor is used as the defeated of photoelectric switching circuit
Go out and connect high level/low level through hidden pipe；7th current mirror is to the source electrode and the 7th current mirror of the first metal-oxide-semiconductor to the 2nd MOS
The source electrode of pipe connects high potential or low potential after being connected according to channel type selection.
7. ambient light sensor according to claim 6, it is characterised in that the photoelectric tube is used to convert optical signals into
Current signal；The hidden pipe is used for the dark current for offsetting photoelectric tube.
8. ambient light sensor according to claim 6, it is characterised in that
When the first raceway groove is P-channel, the second raceway groove is N-channel, the source electrode and the 2nd MOS of the first metal-oxide-semiconductor of the 7th current mirror pair
The source electrode of pipe, which is connected, is followed by high level, and the positive pole of photoelectric tube and hidden pipe connects low level；
When the first raceway groove is N-channel, the second raceway groove is P-channel, the source electrode and the 2nd MOS of the first metal-oxide-semiconductor of the 7th current mirror pair
The source electrode of pipe, which is connected, is followed by low level, and the negative pole of photoelectric tube and hidden pipe connects high level.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720019074.9U CN206558503U (en) | 2017-01-09 | 2017-01-09 | A kind of CMOS integrated circuits, ambient light sensor for being used to suppress current mirror leakage current |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720019074.9U CN206558503U (en) | 2017-01-09 | 2017-01-09 | A kind of CMOS integrated circuits, ambient light sensor for being used to suppress current mirror leakage current |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206558503U true CN206558503U (en) | 2017-10-13 |
Family
ID=60359712
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720019074.9U Withdrawn - After Issue CN206558503U (en) | 2017-01-09 | 2017-01-09 | A kind of CMOS integrated circuits, ambient light sensor for being used to suppress current mirror leakage current |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206558503U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106783852A (en) * | 2017-01-09 | 2017-05-31 | 华润半导体（深圳）有限公司 | A kind of CMOS integrated circuits for suppressing current mirror leakage current |
-
2017
- 2017-01-09 CN CN201720019074.9U patent/CN206558503U/en not_active Withdrawn - After Issue
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106783852A (en) * | 2017-01-09 | 2017-05-31 | 华润半导体（深圳）有限公司 | A kind of CMOS integrated circuits for suppressing current mirror leakage current |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103219961B (en) | The operation amplifier circuit that a kind of bandwidth is adjustable | |
| CN203840288U (en) | Continuous time common mode feedback circuit for two-stage differential amplifier | |
| CN104158516B (en) | voltage comparator | |
| CN106026975B (en) | Auto bias circuit | |
| CN105807837B (en) | A kind of suppression for low pressure difference linear voltage regulator overshoots circuit | |
| CN206558503U (en) | A kind of CMOS integrated circuits, ambient light sensor for being used to suppress current mirror leakage current | |
| Liu et al. | A CMOS transimpedance amplifier with high gain and wide dynamic range for optical fiber sensing system | |
| CN201860305U (en) | Overvoltage protection circuit for USB (universal serial bus) analogue switch under power up and power down conditions | |
| CN102480276B (en) | Foldable cascade operational amplifier | |
| CN102185647B (en) | Photo current monitoring device | |
| CN103376423A (en) | Power supply detection device | |
| CN103217615A (en) | Output short-circuit detection circuit | |
| CN103018588B (en) | Low-power-consumption anti-interference three-state input detection circuit | |
| CN106783852B (en) | It is a kind of for inhibiting the CMOS integrated circuit of current mirror leakage current | |
| CN103888093A (en) | Common-mode level reset circuit for differential signals | |
| CN101604958A (en) | Dual supply amplifier | |
| CN106787683A (en) | A kind of self-adaptive current voltage conversion circuit | |
| CN105469818B (en) | sense amplifier | |
| CN109448621A (en) | A kind of driving circuit and display device | |
| CN103647519B (en) | A kind of input stage of operational amplifier | |
| CN106571796A (en) | Power-on reset circuit and method | |
| CN106527573A (en) | Dark current eliminating circuit for photosensitive diode | |
| CN206322056U (en) | Photodiode dark current eliminates circuit | |
| CN202026306U (en) | Photoelectric current monitoring circuit | |
| CN101404483B (en) | Differential amplifier |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20171013 Effective date of abandoning: 20190426 |