CN206545040U - A kind of high ion gun sputtering target device of utilization rate - Google Patents
A kind of high ion gun sputtering target device of utilization rate Download PDFInfo
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- CN206545040U CN206545040U CN201720287616.0U CN201720287616U CN206545040U CN 206545040 U CN206545040 U CN 206545040U CN 201720287616 U CN201720287616 U CN 201720287616U CN 206545040 U CN206545040 U CN 206545040U
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Abstract
The utility model is related to ion gun sputtering technology field, more particularly, to a kind of high ion gun sputtering target device of utilization rate, including backboard and the first target, the second target, the 3rd target and the 4th target that are detachably arranged on the backboard；Four targets are rectangular configuration, and four targets in matrix pattern structures to form together.A kind of high ion gun sputtering target device of utilization rate of the utility model, by setting four targets, and by four targets removably in matrix pattern structures to form on backboard, so that ion gun can readjust relative position when four targets splice after sputtering for the first time, sputtered again using ion gun, the work of target location adjustment and ion gun sputtering is repeated until four angles of each target are used as stopping, the device can not only increase substantially the utilization rate of target, reduce production cost, and can guarantee that the stability of target material sedimentation rate, ensure that the film of manufacture is not contaminated.
Description
Technical field
The utility model is related to ion gun sputtering technology field, is splashed more particularly, to a kind of high ion gun of utilization rate
Penetrate target device.
Background technology
Ion gun sputtering technology is to bombard the target material surface that different materials are made in vacuum chamber using ion gun so that
Target material deposits to a kind of technology of product surface, is that a kind of of high-quality thin film that prepare grown up in recent years weighs very much
The method wanted, it has the advantages that other masking techniques are incomparable, for example, pollutes small, membrance casting condition controllable precise.
But the beam direction of ion gun is strong, the target material surface product bombarded is too small, and general target utilization only has
10% or so, substantial amounts of waste is caused, increases production cost.In order to improve the utilization rate of target, generally swung using target
Mode, but target, which is swung, can influence the stability of material deposition rate, and also target amplitude of fluctuation is excessive, and ion beam will bombard
Film is polluted to target outer.
Utility model content
The purpose of this utility model is to overcome the deficiencies in the prior art that there is provided a kind of high ion gun sputtering target of utilization rate
Material device, the device can not only increase substantially the utilization rate of target, reduce production cost, and can guarantee that target material is deposited
The stability of speed, it is ensured that the film of manufacture is not contaminated.
To reach above-mentioned purpose, the technical solution adopted in the utility model is：
There is provided a kind of utilization rate high ion gun sputtering target device, including backboard and be detachably arranged on the backboard
The first target, the second target, the 3rd target and the 4th target；Four targets are rectangular configuration, and four targets are in
Matrix pattern structures to form is together.
In such scheme, by setting four targets, and by four targets removably in matrix pattern structures to form in the back of the body
On plate so that ion gun can readjust relative position during four target splicings after sputtering for the first time, using ion gun again
Sputtered, repeat the work of target location adjustment and ion gun sputtering until four angles of each target are used as stopping.
A kind of high ion gun sputtering target device of utilization rate of the utility model, can not only increase substantially the utilization rate of target, reduction
Production cost, and can guarantee that the stability of target material sedimentation rate, it is ensured that the film of manufacture is not contaminated.
Preferably, the backboard is rectangular configuration.Because four targets are rectangular configuration, accounted for when being fixed on backboard
According to area be also rectangular area, compared to the backboard of traditional circular configuration, the backboard of rectangular configuration can use minimum area
To fix four targets, this reduce the spatial area that backboard takes.
Preferably, four targets in matrix pattern structures to form together when size and the size of backboard match；So
The spatial area of backboard occupancy can farthest be reduced by setting.It is further preferred that four targets and backboard are square
Structure, is so set because the length of target is identical with width, is easy to the random splicing of target, improves ion gun sputtering production film
Operating efficiency.
Preferably, backboard is provided with the location structure for being used for being positioned to four targets；Location structure is easy to help work
Make center during four target splicings of personnel positioning, improve the speed that target is fixed.It is further preferred that the positioning knot
Structure is the cross position line located at backboard center, and four targets are separately fixed in four right angles of cross position line,
Realize the quick accurate fixation of target；Or, the location structure is the frame on backboard, and four targets are each attached to
In frame, the quick accurate fixation of target is realized.
Preferably, metal structure is equipped with four targets and backboard, target is welded to connect with backboard by metal structure；
The change for being easy to temperature by controlling metal structure is so set, retightening or departing from again for target and backboard is realized,
Metal structure is the metal structure of low melting point, specially in tin metal structure, indium metal structure or indium stannum alloy metal structure
Any, such as when temperature is higher, target departs from backboard, and when temperature is relatively low, target is fixedly connected with backboard.Further preferably
Ground, backboard is provided with waterway cooling system；Waterway cooling system is easy to make backboard continue to keep relatively low temperature, prevents ion gun
Target departs from backboard during sputtering target material production film.
Using ion gun to the sputtering target device carry out sputtering production film when, the target device it is specifically used including
Following steps：
S1. by the first target, the second target, the 3rd target and the 4th target in matrix pattern structures to form on backboard, make
First time sputtering is carried out with ion gun；
S2. after sputtering terminates, the position of four targets is readjusted, is sputtered again using ion gun；
S3. repeat step S2, until four angles of each target are used as stopping.
Using ion gun to the sputtering target device carry out sputtering production film when, by repeat target location adjustment and from
The work of component sputtering so that four angles of each target can be used, it is thin compared to the circular target production for sputtering traditional
The utilization rate of target can be brought up to four times by film, the occupation mode for penetrating target device, substantially reduce production cost, and use
Without swinging target during target device production film, the stability of target material sedimentation rate is can guarantee that, prevents target from swinging
The problem of excessive ion beam bombardment caused of amplitude pollutes film to target outer occurs.
Preferably, in step S3, the position of the first target and the 4th target is exchanged first, the second target and the 3rd
The position of target is exchanged, and carrying out second using ion gun sputters；Then the position of the 3rd target and the 4th target is entered
Row is exchanged, and the position of the first target and the second target is exchanged, and third time sputtering is carried out using ion gun；Finally by the second target
The position of material and the 3rd target is exchanged, and the position of the first target and the 4th target is exchanged, and the is carried out using ion gun
Four sputterings.So set and four targets is only required no rotation with process planar movement and can be made four corners of target
It is sputtered, and the number of times of planar movement is minimum, is not in that the used corner of target is spelled with no used corner
Situation about being connected together, brings conveniently to sputtering work.
Compared with prior art, the beneficial effects of the utility model are：
The high ion gun sputtering target device of a kind of utilization rate of the utility model, by setting four targets, and by four
Target is removably in matrix pattern structures to form on backboard so that ion gun can readjust four targets after sputtering for the first time
Relative position during splicing, is sputtered again using ion gun, and the work for repeating target location adjustment and ion gun sputtering is straight
Four angles to each target are used as stopping, and the device can not only increase substantially the utilization rate of target, and reduction is produced into
This, and can guarantee that the stability of target material sedimentation rate, it is ensured that the film of manufacture is not contaminated；By the way that backboard is set to
Rectangular configuration, because four targets are rectangular configuration, it is also rectangular area, phase to be fixed in the area occupied when on backboard
Than in the backboard of the backboard of traditional circular configuration, rectangular configuration four targets can be fixed with minimum area, this reduce
The spatial area that backboard takes；By the way that four targets and backboard are disposed as into square structure, due to the length and wide phase of target
Together, it is easy to the random splicing of target, improves the operating efficiency of ion gun sputtering production film；By being used in upper be provided with to four
The location structure that target is positioned, is easy to help staff to position center when four targets splice, improves target
Fixed speed；By the way that location structure is set into cross position line, four targets are separately fixed at cross position line
Four right angles in, realize the quick accurate fixation of target, or the location structure is set to the frame on backboard,
Four targets are each attached in frame, the quick accurate fixation of target is realized；By being equipped with four targets and backboard
Metal structure, and target is welded to connect with backboard by metal structure, it is easy to the change of the temperature by controlling metal structure,
Realize retightening or departing from again for target and backboard；By being provided with waterway cooling system on backboard, it is easy to hold backboard
Relatively low temperature is held in continuation of insurance, prevents ion gun sputtering target material from producing target and backboard disengaging during film.
Brief description of the drawings
Fig. 1 is a kind of schematic diagram of the high ion gun sputtering target device of utilization rate of the utility model.
Fig. 2 is the schematic diagram that ion gun sputtering target material produces film.
Fig. 3 produces the schematic diagram of film for the target that traditional ion gun sputtering is swung.
Fig. 4 is the schematic diagram of target when ion gun is sputtered for the first time, and wherein elliptic region is region to be sputtered, middle cross
Line is the splicing line of four targets.
The schematic diagram of target when Fig. 5 is second of sputtering of ion gun, wherein elliptic region are region to be sputtered, dotted line and side
It is sputter area that frame, which surrounds region, and middle cross hairs is the splicing line of four targets.
Fig. 6 is the schematic diagram of target when ion gun third time is sputtered, and wherein elliptic region is region to be sputtered, dotted line and side
It is sputter area that frame, which surrounds region, and middle cross hairs is the splicing line of four targets.
The schematic diagram of target when Fig. 7 is the 4th sputtering of ion gun, wherein elliptic region are region to be sputtered, dotted line and side
It is sputter area that frame, which surrounds region, and middle cross hairs is the splicing line of four targets.
Embodiment
The utility model is further described with reference to embodiment.Wherein, being given for example only property of accompanying drawing
Illustrate, expression is only schematic diagram, rather than pictorial diagram, it is impossible to be interpreted as the limitation to this patent；In order to which this reality is better described
With new embodiment, some parts of accompanying drawing have omission, zoomed in or out, and do not represent the size of actual product；To ability
For field technique personnel, some known features and its explanation may be omitted and will be understood by accompanying drawing.
The same or analogous part of same or analogous label correspondence in the accompanying drawing of the utility model embodiment；In this practicality
In new description, it is to be understood that if the orientation or position relationship that have the instructions such as term " on ", " under ", "left", "right" are
Based on orientation shown in the drawings or position relationship, it is for only for ease of description the utility model and simplifies description, rather than indicate
Or imply that signified device or element must have specific orientation, to be retouched in specific azimuth configuration and operation, therefore accompanying drawing
Term the being given for example only property explanation of position relationship is stated, it is impossible to be interpreted as the limitation to this patent, for the common skill of this area
For art personnel, the concrete meaning of above-mentioned term can be understood as the case may be.
Embodiment
The schematic diagram of the high ion gun sputtering target device of utilization rate of the present embodiment a kind of as shown in figure 1, including backboard 1 and
It is detachably arranged at the first target 21, the second target 22, the 3rd target 23 and the 4th target 24 on the backboard 1；Described four
Individual target is rectangular configuration, and four targets in matrix pattern structures to form together.
The schematic diagram of target device production film is sputtered using ion gun as shown in Fig. 2 ion gun 4, the target are filled
Put and product platform 5 is placed in vacuum chamber 3, by four targets removably in matrix pattern structures to form on backboard 1, use
Four targets of ion gun 4 pair carry out first time sputtering, and target material is deposited on product platform 5；Then, four targets are readjusted
Relative position when material splices, is sputtered again using four targets of ion gun 4 pair, and target material deposits to product and put down again
On platform 5；Finally, the work of target location adjustment and the sputtering of ion gun 4 is repeated until four angles of each target are used as
Only.A kind of high ion gun sputtering target device of utilization rate of the utility model, can not only increase substantially the utilization rate of target, drop
Low production cost, and can guarantee that the stability of target material sedimentation rate, it is ensured that the film of manufacture is not contaminated.
Wherein, the backboard 1 is rectangular configuration.Because four targets are rectangular configuration, accounted for when being fixed on backboard 1
According to area be also rectangular area, compared to the backboard 1 of traditional circular configuration, the backboard 1 of rectangular configuration can use the face of minimum
Accumulate to fix four targets, this reduce the spatial area that backboard 1 takes.
In addition, four targets in matrix pattern structures to form together when size and the size of backboard 1 match.So set
The spatial area of backboard occupancy can farthest be reduced by putting.In the present embodiment, four targets and backboard 1 are square knot
Structure, is so set because the length of target is identical with width, is easy to the random splicing of target, improves the work of ion gun sputtering production film
Make efficiency.
Wherein, backboard 1 is provided with the location structure for being used for being positioned to four targets, and location structure is easy to help work
Center during four target splicings of personnel positioning, improves the speed that target is fixed.In specific implementation, location structure is set
It is real for located at the cross position line at the center of backboard 1, four targets are separately fixed in four right angles of cross position line
The quick accurate fixation of existing target；Or, the location structure is set to the frame on backboard 1, four targets are equal
It is fixed in frame, realizes the quick accurate fixation of target；In the present embodiment, location structure is cross position line.
In addition, being equipped with metal structure on four targets and backboard 1, target is welded to connect with backboard 1 by metal structure；
The change for being easy to temperature by controlling metal structure is so set, retightening or departing from again for target and backboard 1 is realized,
Metal structure is the metal structure of low melting point, specially in tin metal structure, indium metal structure or indium stannum alloy metal structure
It is any, indium metal structure is used in the present embodiment, cooling processing is carried out to target and backboard 1 so that the temperature of indium metal structure
Reduction, target can be fixedly connected with backboard 1, and the temperature liter so that indium metal structure is heated to target and backboard 1
Height, target can depart from backboard 1.In the present embodiment, backboard 1 is provided with waterway cooling system, and waterway cooling system is easy to make
Backboard 1 persistently keeps relatively low temperature, and target departs from backboard 1 during preventing ion gun sputtering target material production film.
Using ion gun to the sputtering target device carry out sputtering production film when, the target device it is specifically used including
Following steps：
S1. by the first target 21, the second target 22, the 3rd target 23 and the 4th target 24 in matrix pattern structures to form in the back of the body
On plate 1, first time sputtering is carried out using ion gun；
S2. after sputtering terminates, the position of four targets is readjusted, is sputtered again using ion gun；
S3. repeat step S2, until four angles of each target are used as stopping.
Using ion gun to the sputtering target device carry out sputtering production film when, by repeat target location adjustment and from
The work of component sputtering so that four angles of each target can be used, it is thin compared to the circular target production for sputtering traditional
The utilization rate of target can be brought up to four times by film, the occupation mode for penetrating target device, substantially reduce production cost, and use
Without swinging target during target device production film, the stability of target material sedimentation rate is can guarantee that, prevents target from swinging
The problem of excessive ion beam bombardment caused of amplitude pollutes film to target outer occurs.Fig. 3 is traditional ion gun sputtering pendulum
Dynamic target produces the schematic diagram of film.
Wherein, in step S3, the position of the first target 21 and the 4th target 24 is exchanged first, the second target 22 with
The position of 3rd target 23 is exchanged, and carrying out second using ion gun sputters；Then by the 3rd target 23 and the 4th target
24 position is exchanged, and the position of the first target 21 and the second target 22 is exchanged, and carrying out third time using ion gun splashes
Penetrate；Finally the position of the second target 22 and the 3rd target 23 is exchanged, the position of the first target 21 and the 4th target 24 is entered
Row is exchanged, and the 4th sputtering is carried out using ion gun.The schematic diagram of target when Fig. 4 to Fig. 7 is ion gun successively four sputterings.This
Sample, which is set, causes four targets only to require no rotation with process planar movement and four corners of target can be made to be sputtered, and
And the number of times of planar movement is minimum, is not in the used corner of target and the feelings being stitched together without used corner
Condition, brings conveniently to sputtering work.
Obviously, above-described embodiment of the present utility model is only intended to clearly illustrate the utility model example, and
It is not the restriction to embodiment of the present utility model.For those of ordinary skill in the field, in described above
On the basis of can also make other changes in different forms.There is no need and unable to give all embodiments
It is exhaustive.All any modifications, equivalent substitutions and improvements made within spirit of the present utility model and principle etc., should be included in
Within the utility model scope of the claims.
Claims (9)
1. a kind of high ion gun sputtering target device of utilization rate, it is characterised in that including backboard (1) and be detachably arranged at institute
State the first target (21), the second target (22), the 3rd target (23) and the 4th target (24) on backboard (1)；Four targets
Material is rectangular configuration, and four targets in matrix pattern structures to form together.
2. a kind of high ion gun sputtering target device of utilization rate according to claim 1, it is characterised in that the backboard
(1) it is rectangular configuration.
3. a kind of high ion gun sputtering target device of utilization rate according to claim 2, it is characterised in that four targets
Size and the size of backboard (1) during in matrix pattern structures to form together match.
4. a kind of high ion gun sputtering target device of utilization rate according to claim 3, it is characterised in that four targets
And backboard (1) is square structure.
5. a kind of high ion gun sputtering target device of utilization rate according to claim 1, it is characterised in that backboard (1)
It is provided with the location structure for being used for being positioned to four targets.
6. a kind of high ion gun sputtering target device of utilization rate according to claim 5, it is characterised in that the positioning
Structure is the cross position line located at backboard (1) center.
7. a kind of high ion gun sputtering target device of utilization rate according to claim 5, it is characterised in that the positioning
Structure is the frame on backboard (1).
8. a kind of high ion gun sputtering target device of utilization rate according to claim 1, it is characterised in that four targets
And metal structure is equipped with backboard (1), target is welded to connect with backboard (1) by metal structure.
9. a kind of high ion gun sputtering target device of utilization rate according to claim 8, it is characterised in that the backboard
(1) it is provided with waterway cooling system.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720287616.0U CN206545040U (en) | 2017-03-22 | 2017-03-22 | A kind of high ion gun sputtering target device of utilization rate |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201720287616.0U CN206545040U (en) | 2017-03-22 | 2017-03-22 | A kind of high ion gun sputtering target device of utilization rate |
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| CN206545040U true CN206545040U (en) | 2017-10-10 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106884147A (en) * | 2017-03-22 | 2017-06-23 | 中山市博顿光电科技有限公司 | A kind of utilization rate ion gun sputtering target device high and its application method |
| CN110952066A (en) * | 2019-12-31 | 2020-04-03 | 中山市博顿光电科技有限公司 | Target mounting structure and ion source sputtering system |
| CN112831763A (en) * | 2020-12-25 | 2021-05-25 | 安徽立光电子材料股份有限公司 | Target regeneration treatment and target sticking method |
| CN110952066B (en) * | 2019-12-31 | 2024-05-31 | 中山市博顿光电科技有限公司 | Target mounting structure and ion source sputtering system |
-
2017
- 2017-03-22 CN CN201720287616.0U patent/CN206545040U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106884147A (en) * | 2017-03-22 | 2017-06-23 | 中山市博顿光电科技有限公司 | A kind of utilization rate ion gun sputtering target device high and its application method |
| CN110952066A (en) * | 2019-12-31 | 2020-04-03 | 中山市博顿光电科技有限公司 | Target mounting structure and ion source sputtering system |
| CN110952066B (en) * | 2019-12-31 | 2024-05-31 | 中山市博顿光电科技有限公司 | Target mounting structure and ion source sputtering system |
| CN112831763A (en) * | 2020-12-25 | 2021-05-25 | 安徽立光电子材料股份有限公司 | Target regeneration treatment and target sticking method |
| CN112831763B (en) * | 2020-12-25 | 2022-02-11 | 安徽立光电子材料股份有限公司 | Target regeneration treatment and target sticking method |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Ion source sputtering target material device with high utilization rate and using method thereof Effective date of registration: 20190513 Granted publication date: 20171010 Pledgee: Science and Technology Branch of Torch Development Zone of Zhongshan Rural Commercial Bank Co., Ltd. Pledgor: Zhongshan Burton Photoelectric Technology Co., Ltd. Registration number: 2019440020033 |
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| PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20211227 Granted publication date: 20171010 Pledgee: Science and Technology Branch of Torch Development Zone of Zhongshan Rural Commercial Bank Co.,Ltd. Pledgor: ZHONGSHAN IBD TECHNOLOGY Co.,Ltd. Registration number: 2019440020033 |
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| PC01 | Cancellation of the registration of the contract for pledge of patent right |