CN106498357A - A kind of magnetron sputtering apparatus and magnetic control sputtering system - Google Patents
A kind of magnetron sputtering apparatus and magnetic control sputtering system Download PDFInfo
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- CN106498357A CN106498357A CN201610973400.XA CN201610973400A CN106498357A CN 106498357 A CN106498357 A CN 106498357A CN 201610973400 A CN201610973400 A CN 201610973400A CN 106498357 A CN106498357 A CN 106498357A
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- inwall
- magnetron sputtering
- zirconium
- sputtering apparatus
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
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- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention provides a kind of magnetron sputtering apparatus and magnetic control sputtering system, belong to field of semiconductor manufacture.The magnetron sputtering apparatus, including housing, magnetic target, zirconium target material assembly, occlusion part and stone or metal plate for standing a stove on as a precaution against fire for installing base material.There is housing the first inwall, the second inwall and the 3rd inwall, the first inwall and the second inwall relative spacing to arrange.First inwall, the second inwall and the 3rd inwall enclose reaction cavity jointly.Stone or metal plate for standing a stove on as a precaution against fire is installed on the first inwall, and magnetic target is installed on the second inwall, and zirconium target material assembly is arranged at side of the magnetic target away from the second inwall.Occlusion part is arranged at the 3rd inwall, and occlusion part has the first groove, and the opening of the first groove is directed away from the side of the 3rd inwall, and the opening of the first groove is coated with screen cloth.This magnetron sputtering apparatus and magnetic control sputtering system, can be prevented effectively from the impact that reverse sputtering thing comes off to sputtering environment, effectively improve the quality of zirconium metallic film in reaction cavity, so as to improve the performance of semiconductor device.
Description
Technical field
The present invention relates to field of semiconductor manufacture, in particular to a kind of magnetron sputtering apparatus and magnetic control sputtering system.
Background technology
Physical vapour deposition (PVD) (PVD) technology is applied to a lot of fields, and which utilizes sputtering target material component provide with atom
The thin-film material deposition thing with precise thickness of level smooth surface.Target material assembly the target of sputtering performance and is suitable to by meeting
Combined with target and the backboard with some strength is constituted.
In sputter procedure, target material assembly is assemblied in sputtering base, the target in the chamber full of noble gases
It is exposed in electric field, so as to produce ion plasma.The plasma of ion plasma is collided with sputtering target material surface, so as to from target
Material surface escapes atom.It is expected that voltage difference between target and cloth base material to be coated causes effusion atom to be formed on substrate surface
Thin film.
At present, contain highly purified zirconium target in zirconium target material assembly.In sputter procedure, the sputter face of zirconium target is sputtered
Zirconium atom except substrate surface to be coated can be deposited on, it is also possible to be deposited in the other surfaces of within the chamber, including target
The surface at sputter face edge, target side and part backboard.After sputtering a period of time, above-mentioned surface occurs some accumulations
Thing, i.e. reverse sputtering thing, the adhesive force of these reverse sputtering things less, are easily split away off during sputtering, form abnormal putting
Electricity, affects sputtering environment.
Content of the invention
The first object of the present invention is to provide a kind of magnetron sputtering apparatus, is being grown with solving traditional magnetron sputtering apparatus
The defect that time is come off using rear reverse sputtering thing and affects to sputter environment.
The second object of the present invention is to provide a kind of magnetic control sputtering system, and this magnetic control sputtering system includes above-mentioned magnetic control
Sputtering equipment and corresponding control system, high degree of automation, are conducive to industrial big production.
In order to realize that the above-mentioned purpose of the present invention, spy are employed the following technical solutions：
A kind of magnetron sputtering apparatus, including housing, magnetic target, zirconium target material assembly, occlusion part and stove for installing base material
Disk.There is housing the first inwall, the second inwall and the 3rd inwall, the first inwall and the second inwall relative spacing to arrange.In first
Wall, the second inwall and the 3rd inwall enclose reaction cavity jointly, and magnetic target, zirconium target material assembly, occlusion part and stone or metal plate for standing a stove on as a precaution against fire are arranged at instead
Answer in cavity.Stone or metal plate for standing a stove on as a precaution against fire is installed on the first inwall, and magnetic target is installed on the second inwall, and zirconium target material assembly is arranged at magnetic target away from second
The side of wall.Occlusion part is arranged at the 3rd inwall, and there is occlusion part the first groove, the opening of the first groove to be directed away from the 3rd
The side of wall, and the opening of the first groove is coated with screen cloth.
Further, in preferred embodiments of the present invention, the mesh number of above-mentioned screen cloth is 200-400 mesh.
Further, in preferred embodiments of the present invention, above-mentioned screen cloth is made up of insulant.
Further, in preferred embodiments of the present invention, above-mentioned zirconium target material assembly include the zirconium target that is fixedly connected and
Backboard, backboard are removably connected to magnetic target, and zirconium target is sputter face near the one side of base material.
Further, in preferred embodiments of the present invention, above-mentioned zirconium target includes integrally formed substrate and boss, base
There is upper and lower surface, backboard to be provided with the second groove at bottom, and the second groove is enclosed by bottom surface and side face and formed, the following table of substrate
Face is welded in the bottom surface of the second groove, and the upper surface of substrate is provided with zigzag projection, upper surface and the one of the close boss of backboard
Face is generally aligned in the same plane.
Further, in preferred embodiments of the present invention, the above-mentioned side face of the second groove is matched somebody with somebody with the sidewall spacers of substrate
Close, the gap between the side face of the second groove and the side wall of substrate is less than 0.1mm.
Further, in preferred embodiments of the present invention, above-mentioned projection is taper, between two neighboring raised side wall
Angle be 45 ° -75 °, the height of raised height less than boss.
Further, in preferred embodiments of the present invention, above-mentioned backboard offers multiple radiatings away from the side of boss
Passage, multiple heat dissipation channel intervals are uniformly distributed.
Further, in preferred embodiments of the present invention, buffer board is provided between above-mentioned magnetic target and zirconium target material assembly
And for adjusting the magnetic field intensity between zirconium target material assembly and base material, buffer board includes at least two adjustment plates for stacking successively.
A kind of magnetic control sputtering system, including above-mentioned magnetron sputtering apparatus, and the control matched with magnetron sputtering apparatus
System.
Compared with prior art, beneficial effects of the present invention are：
It is reaction cavity in the housing of this magnetron sputtering apparatus, sputtering reaction just occurs in this relatively closed reaction
In cavity.Stone or metal plate for standing a stove on as a precaution against fire is installed on the first inwall in reaction cavity, in sputtering reaction, on stone or metal plate for standing a stove on as a precaution against fire, is provided with base to be coated
Material, stone or metal plate for standing a stove on as a precaution against fire are used for for base material being heated to preset temperature, are easy to the formation of thin film.Pacify on the second inwall relative with the first inwall
The magnetic target of dress provides magnetic field for sputtering reaction.Zirconium target material assembly is installed in magnetic target, and is oppositely arranged in above-mentioned base material.
Meanwhile, occlusion part is provided with the 3rd inwall in the inwall of housing in addition to the first inwall and the second inwall,
There is the first groove, for receiving the zirconium atom of the directive reaction cavity inwall in sputtering reaction, and to zirconium atom on occlusion part
Deposited, that is, formed reverse sputtering thing.The screen cloth arranged at the first slot opening, can enter to the above-mentioned reverse sputtering thing for coming off
Row effectively catching, prevents which from dropping in reaction cavity and forms paradoxical discharge, affect sputtering environment.
This magnetron sputtering apparatus, the impact that can effectively avoid reverse sputtering thing from coming off to sputtering environment, effectively improve
The quality of zirconium metallic film in reaction cavity, so that improve the performance of semiconductor device.
Description of the drawings
In order to be illustrated more clearly that the technical scheme of embodiment of the present invention, below will be to using needed for embodiment
Accompanying drawing be briefly described, it will be appreciated that the following drawings illustrate only certain embodiments of the present invention, therefore be not to be seen as
It is the restriction to scope, for those of ordinary skill in the art, on the premise of not paying creative work, can be with root
Other related accompanying drawings are obtained according to these accompanying drawings.
Fig. 1 is a kind of structural representation of magnetic control sputtering device that the embodiment of the present invention 1 is provided；
Fig. 2 is a kind of generalized section of the housing of magnetic control sputtering device that the embodiment of the present invention 1 is provided；
Fig. 3 is the structural representation of zirconium target material assembly in the magnetic control sputtering device that the embodiment of the present invention 1 is provided；
Fig. 4 is a kind of structural representation of magnetic control sputtering device that the embodiment of the present invention 2 is provided.
Figure acceptance of the bid note is respectively：
Label：100- magnetron sputtering apparatus；200- magnetron sputtering apparatus；110- housings；The first inwalls of 111-；112- second
Inwall；The 3rd inwalls of 113-；114- reaction cavities；120- magnetic targets；130- zirconium target material assemblies；131- zirconium targets；1311- substrates；
1312- boss；1313- sputter faces；132- backboards；The second grooves of 1321-；133- is raised；134- heat dissipation channels；235- is buffered
Plate；236- adjustment plates；140- occlusion parts；The first grooves of 141-；142- screen clothes；150- stone or metal plate for standing a stove on as a precaution against fires；151- base materials.
Specific embodiment
Purpose, technical scheme and advantage for making embodiment of the present invention is clearer, below in conjunction with present invention enforcement
Accompanying drawing in mode, to embodiment of the present invention in technical scheme be clearly and completely described, it is clear that described reality
The mode of applying is a part of embodiment of the invention, rather than whole embodiments.Embodiment in based on the present invention, ability
The every other embodiment obtained under the premise of creative work is not made by domain those of ordinary skill, belongs to the present invention
The scope of protection.Therefore, below the detailed description of the embodiments of the present invention for providing in the accompanying drawings is not intended to limit will
The scope of the present invention of protection is sought, but is merely representative of the selected embodiment of the present invention.Embodiment in based on the present invention,
The every other embodiment obtained under the premise of creative work is not made by those of ordinary skill in the art, belongs to this
The scope of invention protection.
In describing the invention, it is to be understood that term " length ", " width ", " thickness ", " on ", D score,
The orientation of instruction such as "front", "rear", " level ", " top ", " bottom ", " interior ", " outward " or position relationship are based on side shown in the drawings
Position or position relationship, are for only for ease of description description of the invention and simplified, rather than indicate or imply equipment or the unit of indication
Therefore part must be not considered as limiting the invention with specific orientation, with specific azimuth configuration and operation.
Additionally, term " first ", " second " and " the 3rd " is only used for describing purpose, and it is not intended that indicating or hint phase
To importance or the implicit quantity for indicating indicated technical characteristic.Thus, " first ", " second " and " the 3rd " is defined
Feature can be expressed or implicitly include one or more this feature.In describing the invention, the implication of " multiple "
It is two or more, unless otherwise expressly limited specifically.
In the present invention, unless otherwise clearly defined and limited, term " installation ", " being connected ", " connection ", " fixation " etc.
Term should be interpreted broadly, for example, it may be fixedly connected, or be detachably connected, or integral；It can be direct phase
Even, it is also possible to be indirectly connected to by intermediary, can be that the connection of two element internals or the interaction of two elements are closed
System.For the ordinary skill in the art, above-mentioned term in the present invention concrete can be understood as the case may be
Implication.
In the present invention, unless otherwise clearly defined and limited, fisrt feature second feature it " on " or D score
The first and second feature directly contacts can be included, it is also possible to be not directly contact including the first and second features but by it
Between other characterisation contact.And, fisrt feature second feature " on ", " top " and " above " include that first is special
Levy directly over second feature and oblique upper, or fisrt feature level height is merely representative of higher than second feature.Fisrt feature exists
Second feature " under ", " lower section " and " below " include fisrt feature immediately below second feature and obliquely downward, or be merely representative of
Fisrt feature level height is less than second feature.
Embodiment 1 as shown in Figure 1-Figure 3,
The present embodiment provides a kind of magnetron sputtering apparatus 100, as shown in figure 1, this magnetron sputtering apparatus 100 include housing
110th, stone or metal plate for standing a stove on as a precaution against fire 150, magnetic target 120, zirconium target material assembly 130 and occlusion part 140.
In the present embodiment, the housing 110 of this magnetron sputtering apparatus 100 is four side bodies, in other embodiments housing 110
Can also be the other shapes such as cylindrical, prismatic or irregular shape.Housing 110 has the first inwall 111, the second inwall 112
With the 3rd inwall 113, the first inwall 111 and the setting of 112 relative spacing of the second inwall, in the present embodiment, the first inwall 111
In the roof of housing 110, can be the whole roof of housing 110, or a portion of roof；Second inwall 112
The diapire of housing 110 is located at, can be the whole diapire of housing 110, or a portion of diapire.In housing 110
Inwall in remainder in addition to the first inwall 111 and the second inwall 112 be the 3rd inwall 113.First inwall 111,
Second inwall 112 and the 3rd inwall 113 enclose reaction cavity 114 jointly, and magnetron sputtering reaction betides reaction cavity 114
In.
Stone or metal plate for standing a stove on as a precaution against fire 150, is installed on the first inwall 111 of reaction cavity 114.In sputtering reaction, it is provided with stone or metal plate for standing a stove on as a precaution against fire 150
Base material 151 to be coated.Stone or metal plate for standing a stove on as a precaution against fire 150 is used for for base material 151 being heated to preset temperature, is easy to zirconium atom heavy on 151 surface of base material
Product forms thin film.
Magnetic target 120, is installed on the second inwall 112 of reaction cavity 114.Magnetic target 120 provides magnetic field for sputtering reaction, leads to
Cross the direction of motion that the magnetic field can change sputtering reaction intermediate ion.Zirconium target material assembly 130 is installed in magnetic target 120, and in upper
State base material 151 to be oppositely arranged.
In traditional magnetron sputtering apparatus, the 3rd inwall is directly contact with sputtering environment.Therefore, in sputtering reaction
In, zirconium atom also has quite a few to scatter on the 3rd inwall in addition to depositing to substrate surface to be coated and forming thin film
And deposit, form reverse sputtering thing.Generally, the 3rd inwall is metal material, due to the knot between zirconium atom and the 3rd inwall
Weak with joint efforts, when zirconium atom three inwall of constant bombardment, under gravity and zirconium atom bombardment power effect, it is deposited on the 3rd inwall
Reverse sputtering thing easily splits away off, and drops and forms disintegrating slag in reaction cavity, or even some disintegrating slags directly can drop in target table
Face, these disintegrating slags easily form paradoxical discharge during sputtering, affect sputtering environment, ultimately result in the film quality of preparation
Not up to standard.
In consideration of it, the phenomenon that the magnetron sputtering apparatus 100 that the present embodiment is provided come off in order to avoid above-mentioned reverse sputtering thing,
Occlusion part 140 is provided with 3rd inwall 113.Occlusion part 140 has the first groove 141, and the opening of the first groove 141 is towards far
From the side that the opening of the side of the 3rd inwall 113, i.e. the first groove 141 occurs towards sputtering reaction.First groove 141 is used for
The zirconium atom of 114 inwall of directive reaction cavity in sputtering reaction is received, and zirconium atom is deposited.In the present embodiment
One groove 141 is shaped as rectangular channel, in other embodiments of the invention, the shape of first groove 141 can be T-slot,
Dovetail groove or other can meet the groove of actual demand.
As shown in Fig. 2 the opening of the first groove 141 is coated with screen cloth 142, screen cloth 142 can be to the above-mentioned backwash that comes off
Penetrating thing carries out effectively catching, prevents which from dropping in reaction cavity 114 and forms paradoxical discharge, affects sputtering environment.In the present invention
In preferred embodiment, the mesh number of screen cloth 142 is between 200-400 mesh.Inventor is had found through test for several times, when the sieve for arranging
When net 142 is 200-400 mesh, the aperture of screen cloth 142 is slightly less than the disintegrating slag of the reverse sputtering thing for splitting away off, and disintegrating slag can be carried out
Retain well.And when the mesh number of screen cloth 142 is more than 400 mesh, the aperture of screen cloth 142 is little, through prolonged sputtering reaction
Afterwards, zirconium atom is easily deposited on screen cloth 142, the sieve aperture blocked on screen cloth 142, makes reverse sputtering thing be deposited on the table of screen cloth 142
Face, and then can not only prevent reverse sputtering thing from dropping in reaction cavity 114, or even coming off for reverse sputtering thing can be accelerated.
Inventor is through test of many times confirmation, mesh number most preferably 300 mesh of screen cloth 142, the rejection effect of this screen cloth 142
Preferable through effect with zirconium atom, active balance can be reached therebetween, advantageously in avoiding reverse sputtering thing from dropping to
The preparation of thin film is affected in reaction cavity 114.In the present embodiment, screen cloth 142 is made up of insulant, so as to avoid in sputtering
The electromagnetic interference phenomenon occurred due to due to screen cloth 142 in reaction.
As shown in figure 3, zirconium target material assembly 130 includes the zirconium target 131 being fixedly connected and backboard 132, backboard 132 is detachable
It is connected in magnetic target 120.This mode that is detachably connected can be clamping, magnetic and bonding etc..In the present embodiment, backboard
132 are connected in magnetic target 120 by way of clamping.130 dorsulum of zirconium target material assembly, 132 one side plays support zirconium target
131 effect, the effect on the other hand with conduction heat.
Zirconium target 131 is sputter face 1313 near the one side of base material 151, and sputter face 1313 is oppositely arranged with base material 151.?
In sputter procedure, argon ion is produced in the reaction cavity 114 of vacuum, and accelerated to the zirconium target 131 with negative potential,
Argon ion acquisition momentum in accelerator, and the sputter face 1313 of zirconium target 131 is bombarded, zirconium atom is knocked out, subsequent zirconium atom
Move to 151 surface of base material to deposit and form thin film, complete sputter procedure.
In sputter procedure, zirconium atom except being deposited on 151 surface of base material and the 3rd inwall 113, also can by zirconium atom
It is deposited on the positions such as 1313 edge of sputter face, 132 surface of backboard of zirconium target 131.After sputtering a period of time, zirconium target 131
With occur on the part surface of backboard 132 and 131 composition identical deposit of zirconium target, i.e. reverse sputtering thing.Anti- due to these
Sputtering thing and the adhesive force between zirconium target 131 and/or backboard 132 are little, and piling up to a certain extent afterwards can be in gravity and argon ion
Bombardment power effect under come off, formed paradoxical discharge, the quality of zirconium metallic film is affected.
In consideration of it, affecting thin film to overcome the reverse sputtering thing on the part surface of zirconium target 131 and backboard 132 to come off
Quality, inventor are further improved to above-mentioned magnetron sputtering apparatus 100.
Zirconium target 131 includes that integrally formed substrate 1311 and boss 1312, substrate 1311 and boss 1312 are all by zirconium
Metal material is made.Substrate 1311 and boss 1312 can have various shapes, such as cuboid, cylinder, prismatic etc.,
In the present embodiment, substrate 1311 and boss 1312 are cylindric.Boss 1312 is sputter face away from the surface of substrate 1311
1313.In sputtering reaction, the sputter face 1313 of argon ion bombardment boss 1312 is produced for preparing the zirconium atom of thin film.
Magnetic field as 1313 center of sputter face away from zirconium target 131 in actual production, usually occurs is weaker, and
So that the momentum of the zirconium atom of 131 edge of bombardment zirconium target is not big enough, so the zirconium atom pounded from zirconium target 131
Momentum is also little.These zirconium atoms are not enough due to momentum, it is difficult to migrate to shape on the base material 151 for be located at 131 opposite face of zirconium target
Into thin film, thus the other surfaces that can be deposited in reaction cavity 114.In preferred embodiments of the present invention, boss 1312
Diameter is the half of substrate 1311.So arrange and be advantageous in that, 1313 fringe magnetic field weaker area of sputter face can be reduced
Area, the not enough zirconium atom of the momentum that 1313 edge of sputter face so as to reduce by zirconium target 131 is produced because magnetic field is weaker, makes
The amount for obtaining reverse sputtering thing is further reduced, and fundamentally solves impact of the reverse sputtering thing to film quality.
Substrate 1311 has the upper surface (not shown) and lower surface (not shown) being oppositely arranged, upper surface and boss 1312
Adjacent, lower surface is connected with backboard 132.Substrate 1311 is also to be formed by zirconium intermetallic composite coating, for making boss 1312 and backboard 132
Connection.
Backboard 132 is provided with the second groove 1321, and the shapes and sizes of the second groove 1321 are matched with substrate 1311.Backboard
132 there is bottom surface (not shown) and side face (not shown), bottom surface and side face to enclose jointly the second groove 1321.Substrate 1311
Lower surface is welded in the bottom surface of the second groove 1321, the mode of this welding have multiple, using Diffusion Welding in the present embodiment
Mode, accurately realizes the fine and close diffusion connection between substrate 1311 and the second groove 1321, and be packed or very without the need for overall
Empty protection.This structure is in welding, it is not necessary to take loaded down with trivial details jacket treatment process, multiple without carrying out after Diffusion Welding
Miscellaneous goes jacket operation, have the advantages that manufacturing procedure is few, low cost.
The upper surface of substrate 1311 is generally aligned in the same plane with the one side of the close boss 1312 of backboard 132, i.e., in zirconium target
After 130 installation of component, substrate 1311 is entirely located in the second groove 1321, the thickness of substrate 1311 and the second groove 1321
Depth consistent.So arrange and be advantageous in that so that sputter face 1313 is higher than backboard 132 and the surface for causing sputter face 1313
Product contributes to making film surface smooth less than the surface area of the second groove 1321, improves the yield rate of thin film.
In sputtering reaction, substrate 1311 also can be by argon ion bombardment near the side of boss 1312, and substrate 1311
Upper surface is distant with 1313 center of sputter face, and suffered magnetic field intensity is weaker herein, so the zirconium atom for being pounded
Momentum also very little.In order to solve this problem, zigzag is provided with the upper surface of the substrate 1311 of this zirconium target material assembly 130
Raised 133.This zigzag projection 133 can increase the roughness on 1311 surface of substrate, and can change the fortune of reverse sputtering thing
Dynamic rail mark so as to be easily serrated and be deposited between the projection 133 of substrate 1311, reduces reverse sputtering thing in sputtering reaction
Suffered impulsive force, increased adhesive force of the reverse sputtering thing on zirconium target material assembly 130, so as to greatly reduce reverse sputtering
The situation that thing comes off occurs, and effectively raises the quality of zirconium metallic film.
Used as preferred, as shown in figure 3, raised 133 is taper, the angle between two neighboring raised 133 side wall is
45 ° -75 °, in the present embodiment, it is preferably 60 °.Height of raised 133 height less than boss 1312.The projection 133 of this taper
The slip-off preventing of reverse sputtering thing is made good use of.When the angle between two neighboring raised 133 side wall is at 45 ° -75 °, be conducive to
Adhesive force of the increase reverse sputtering thing on raised 133 so as to difficult for drop-off.
In order to further avoid reverse sputtering thing from depositing in the second groove 1321, in the present embodiment, the second groove 1321
The sidewall spacers of side face and substrate 1311 coordinate, in reality processing, connected using vacuum electron beam soldering and sealing, realize zirconium target
131 edge soldering and sealing so that the gap between the side face of the second groove 1321 and the side wall of substrate 1311 is less than 0.1mm.
In order to further improve the performance of the magnetron sputtering apparatus 100, the present embodiment is in backboard 132 away from boss 1312
Side offers multiple heat dissipation channels 134, and the interval of multiple heat dissipation channels 134 is uniformly distributed.130 dorsulum 132 of zirconium target material assembly
On the one hand play a part of to support zirconium target 131, on the other hand there is the effect of conduction heat.Due to backboard 132 and zirconium target
131 are linked together by way of welding, and in order to prevent as temperature is raised in sputtering, zirconium can be catalyzed backboard 132 and zirconium
Solder between target 131 melts, so that affecting sputtering effect.Therefore, the magnetron sputtering apparatus 100 for providing in the present embodiment
In, by the setting of above-mentioned heat dissipation channel 134, zirconium target 131 can be carried out sufficiently cool, desirably prevent above-mentioned situation send out
Raw.In actual production, these heat dissipation channels 134 can be formed by way of machining.
This magnetron sputtering apparatus 100, the impact that can effectively avoid reverse sputtering thing from coming off to sputtering environment, effectively carry
The quality of zirconium metallic film in high reaction cavity 114, so that improve the performance of semiconductor device.
Embodiment 2 as shown in figure 4,
The present embodiment provides a kind of magnetron sputtering apparatus 200, as shown in figure 4, which realizes the technique effect of principle and generation
Identical with embodiment 1, difference is the setting of buffer board 235.
Buffer board 235 is provided between magnetic target 120 and zirconium target material assembly 130, and this buffer board 235 can adjust zirconium target
Magnetic field intensity between component 130 and base material 151, so as to strengthen restraining forceies of the magnetic field to argon ion, advantageously forms high-quality
Zirconium metallic film.Buffer board 235 includes at least two adjustment plates 136 for stacking successively, and the quantity of adjustment plate 136 can be 2
Individual, 4,6 or more, designer can be selected according to practical situation, in the present embodiment the quantity of adjustment plate 136
For 3.Adjustment plate 236 adjusts the magnetic field between knot zirconium target 131 and base material 151 by being removed or moving into working region
Intensity.
This magnetron sputtering apparatus 200, can be adjusted between zirconium target material assembly 130 and base material 151 according to actual needs
Magnetic field intensity, is conducive to the quality and yield rate for improving zirconium metallic film.
Embodiment 3
The present embodiment provides a kind of magnetic control sputtering system (not shown), and this magnetic control sputtering system includes above-mentioned magnetron sputtering
Equipment and control system (not shown), the control system are matched with above-mentioned magnetron sputtering apparatus, and can control this magnetic control
The operation of sputtering equipment.The preparation that semiconductive thin film is carried out using this magnetic control sputtering system, high degree of automation are conducive to work
Sparetime university produces.
The preferred embodiment of the present invention is the foregoing is only, the present invention is not limited to, for this area
For technical staff, the present invention can have various modifications and variations.All within the spirit and principles in the present invention, made any
Modification, equivalent, improvement etc., should be included within the scope of the present invention.
Claims (10)
1. a kind of magnetron sputtering apparatus, it is characterised in that including housing, magnetic target, zirconium target material assembly, occlusion part and for installing
The stone or metal plate for standing a stove on as a precaution against fire of base material, the housing have the first inwall, the second inwall and the 3rd inwall, first inwall and second inwall
Relative spacing is arranged, and first inwall, second inwall and the 3rd inwall enclose reaction cavity jointly, the magnetic
Target, the zirconium target material assembly, the occlusion part and the stone or metal plate for standing a stove on as a precaution against fire are arranged in the reaction cavity, and the stone or metal plate for standing a stove on as a precaution against fire is installed on described
First inwall, the magnetic target are installed on second inwall, and the zirconium target material assembly is arranged at the magnetic target away from described second
The side of inwall, the occlusion part are arranged at the 3rd inwall, and the occlusion part has the first groove, first groove
Opening is directed away from the side of the 3rd inwall, and the opening of first groove is coated with screen cloth.
2. magnetron sputtering apparatus according to claim 1, it is characterised in that the mesh number of the screen cloth is 200-400 mesh.
3. magnetron sputtering apparatus according to claim 1, it is characterised in that the screen cloth is made up of insulant.
4. magnetron sputtering apparatus according to claim 1, it is characterised in that the zirconium target material assembly includes being fixedly connected
Zirconium target and backboard, the backboard are removably connected to the magnetic target, and the zirconium target is sputtering near the one side of the base material
Face.
5. magnetron sputtering apparatus according to claim 4, it is characterised in that the zirconium target includes integrally formed substrate
And boss, the substrate has upper and lower surface, and the backboard is provided with the second groove, and second groove is by bottom surface and week
Face encloses and forms, and the lower surface of the substrate is welded in the bottom surface of second groove, the substrate described on
Surface is provided with zigzag projection, and the upper surface is generally aligned in the same plane with the one side of the close described boss of the backboard.
6. magnetron sputtering apparatus according to claim 5, it is characterised in that the side face of second groove with described
The sidewall spacers of substrate coordinate, and the gap between the side face of second groove and the side wall of the substrate is less than 0.1mm.
7. magnetron sputtering apparatus according to claim 5, it is characterised in that described raised be taper, two neighboring described
Angle between raised side wall is 45 ° -75 °, height of the raised height less than the boss.
8. magnetron sputtering apparatus according to claim 5, it is characterised in that the backboard is opened away from the side of the boss
Multiple heat dissipation channels are provided with, multiple heat dissipation channel intervals are uniformly distributed.
9. magnetron sputtering apparatus according to claim 1, it is characterised in that between the magnetic target and the zirconium target material assembly
Be provided with buffer board and for adjusting the magnetic field intensity between the zirconium target material assembly and the base material, the buffer board include to
Few two adjustment plates for stacking successively.
10. a kind of magnetic control sputtering system, it is characterised in that including the magnetron sputtering apparatus any one of claim 1-9,
And the control system matched with the magnetron sputtering apparatus.
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| CN201610973400.XA CN106498357A (en) | 2016-11-04 | 2016-11-04 | A kind of magnetron sputtering apparatus and magnetic control sputtering system |
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