CN206490658U - The anti-vibration broadband matching circuit of HIGH-POWERED MICROWAVES device of GaN multichip combinations - Google Patents
The anti-vibration broadband matching circuit of HIGH-POWERED MICROWAVES device of GaN multichip combinations Download PDFInfo
- Publication number
- CN206490658U CN206490658U CN201720115061.1U CN201720115061U CN206490658U CN 206490658 U CN206490658 U CN 206490658U CN 201720115061 U CN201720115061 U CN 201720115061U CN 206490658 U CN206490658 U CN 206490658U
- Authority
- CN
- China
- Prior art keywords
- matching
- gan
- matching circuit
- multichip
- output
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Microwave Amplifiers (AREA)
Abstract
The utility model discloses a kind of anti-vibration broadband matching circuit of the HIGH-POWERED MICROWAVES device of GaN multichip combinations, including it is encapsulated in the input matching circuit being sequentially connected in encapsulating package, N number of GaN chips and output matching circuit；Input matching circuit is divided into two-stage, and the first order is T-shaped matching network, and the second level is N roads power divider；Output matching circuit is divided into two-stage, and the first order is T-shaped matching network, and the second level is N roads power combiner.The utility model matching network employs second degree matches network, adds the bandwidth of device.The Sensor gain and phase perturbations of N roads power divider output end and each gold wire bonding point of power combiner input are controlled within 5 degree, ensure that device overall power output and combined coefficient.Transmission line is relatively wide, without ELECTROMIGRATION PHENOMENON, is not in long-term reliability problems.
Description
Technical field
The utility model is related to a kind of anti-oscillating wideband of microwave high power device suitable for C wave band GaN multichip combinations
Match circuit, belongs to microwave device technology field.
Background technology
General requirement of the modern radar system to microwave power device is output power, power density height, wide work frequency
Band, higher emission effciency, energy linear work and low cost and high reliability.Power output reaches C-band more than hectowatt grade
GaN microwave high power devices, generally require carry out multichip combination.Single-chip GaN input and output impedance all than relatively low, it is necessary to
Matched in device, carry out the input and output impedance of boost device.Due to the requirement with low cost is miniaturized, device is typically used
General encapsulating package carries out device encapsulation, and the input and output impedance of device all matches 50 ohm.Matching is logical in device
Normal matching way is T-shaped matching of the first order matching using lumped parameter.The second level uses power divider and power combing
The mode of device matches 50 ohm.Power divider and power combiner are except with power distribution or synthesis and impedance matching work(
Can be outer, in addition it is also necessary to prevent device to be internally formed strange mode oscillation caused by feedback.
Utility model content
To solve the internal oscillator that prior art may occur, the purpose of this utility model is to provide a kind of suitable for C
The anti-vibration broadband matching circuit of microwave high power device of wave band GaN multichip combinations.
In order to realize above-mentioned target, the utility model is adopted the following technical scheme that：
A kind of anti-vibration broadband matching circuit of the HIGH-POWERED MICROWAVES device of GaN multichip combinations, it is characterized in that, including encapsulation
Input matching circuit, GaN chips and the output matching circuit being sequentially connected in encapsulating package；
Described input matching circuit is divided into two-stage, and the first order is T-shaped matching network, and the second level is N roads power divider；
Described output matching circuit is divided into two-stage, and the first order is T-shaped matching network, and the second level is N roads power combiner；
The unit group that the T-shaped matching network is made up of N number of first series inductance, matching capacitance and the second series inductance
Into；First series inductance and the series connection of the second series inductance, its connects end altogether are grounded through inputting matching capacitance；
N roads power divider includes two grades, and the first order exports to two output ports, second by an input port
Level exports to N number of output port by two output ports；
N roads power combiner includes two grades, and the first order exports to two output ports, second by N number of input port
Level exports to an output port by two output ports.
The impedance conversion Q values of the T-shaped matching network are provided with a upper limit.
Trimmer block is provided with by matching capacitance in the T-shaped matching network；Matching capacitance and trimmer block pass through
Bonding gold wire is connected.
Matching capacitance includes being provided with isolation resistance between two matching capacitances in parallel, two matching capacitances in parallel.
First series inductance, the second series inductance are realized by bonding gold wire.
The Sensor gain and phase perturbations of N roads power divider input port are controlled within 5 degree.
The output end of N roads power divider is provided with isolation resistance.
GaN chip-counts N is the even number not less than 4.
The beneficial effect that the utility model is reached：
The mode that the utility model employs two-stage matching realizes Broadband Matching.Increase between electric capacity in T-shaped matching
Isolation resistance, prevents device from occurring strange mode oscillation.The transmission line of power divider is relatively wide, without ELECTROMIGRATION PHENOMENON, will not
There are long-term reliability problems.Power divider output end and the phase of each gold wire bonding point of power combiner input are inconsistent
Property control within 5 degree, ensure that device entirety power output and combined coefficient.In the output port and work(of power divider
Rate synthesizer input uses isolation resistance, and the isolation and return loss of each port of increase device prevent device from occurring strange
Mode oscillation.
Brief description of the drawings
Fig. 1 is the anti-vibration Broadband Matching schematic diagram of device；
Fig. 2 is the physics realization schematic diagram of device；
Tu3Shi No. six power dividers and power combiner configurations schematic diagram；
Fig. 4 is input, output matching electric capacity schematic diagram；
The implication of reference in figure：
1.RF2417SPC-E is encapsulated；2. input matching capacitance；3.GaN chips；4. output matching electric capacity；5. input；
6. output end；7. power divider；8. power combiner；9. bonding gold wire；
71,72,73：Isolation resistance；P1, P2, P3, P4, P5, P6, P7, P8, P9, P10, P11, P12:Key
B alloy wire point；
21,22：Matching capacitance；24,25：Trimmer block；23:Isolation resistance.
Embodiment
The utility model is further described below in conjunction with the accompanying drawings.Following examples are only used for clearly illustrating this
The technical scheme of utility model, and protection domain of the present utility model can not be limited with this.
As depicted in figs. 1 and 2, a kind of microwave suitable for C wave band GaN multichip combinations that the utility model is related to is big
The anti-vibration broadband matching circuit of power device, including encapsulating package 1, input matching circuit, output matching circuit and GaN chips
3；
Described input matching circuit is divided into two-stage, and the first order is T-shaped matching network 11, and the second level is six tunnel power distributions
Device 7；The power divider 7 completes power distribution and impedance matching function simultaneously.Using N as the circuit knot on six tunnels in the present embodiment
It is specifically described exemplified by structure, those skilled in the art are it is recognised that be circuit when other are not less than four even number value for N
Structure is similarly.
With reference to Fig. 4, the T-shaped matching network of the first order is gone here and there by six the first series inductance Lin1, input matching capacitance 2 and second
Join the unit composition that inductance Lin2 is constituted；First series inductance Lin1 and the second series inductance Lin2 series connection, its connects end altogether is through defeated
Enter matching capacitance 2 to be grounded.Input between the matching capacitance 21,22 in matching capacitance 2 with isolation resistance 23；First, second series connection
Inductance Lin1, Lin2 are realized by bonding gold wire 9.
The side of matching capacitance 21,22 is provided with trimmer block 34,35；Matching capacitance 21,22 and trimmer block 34,35 can lead to
Bonding gold wire connection is crossed, matching capacitance value is adjusted.
Second level matching network matches 50 ohm and completed by No. six power dividers.
No. six power dividers 7 are by secondary groups into the first order exports to two output ports, second by an input port
Level exports to six output ports by two output ports.
Described output matching circuit is divided into two-stage, and the first order is T-shaped matching network 12, and the second level is six road power combings
Device 8；The power combiner 8 completes power combing and impedance matching function simultaneously.
The T-shaped matching network of the first order is by six the first series inductance Lout1, the series inductance of output matching electric capacity 4 and second
The unit composition that Lout2 is constituted；First series inductance Lout1 and the second series inductance Lout2 series connection, its connects end altogether is through output
It is grounded with electric capacity 4.First, second series inductance Lout1, Lout2 is realized by bonding gold wire.With Fig. 4 similarly, output
With between the matching capacitance in electric capacity 4 have isolation resistance；Trimmer block is provided with by matching capacitance；Matching capacitance and trimmer
Block can be connected by bonding gold wire, adjust matching capacitance value.
Second level matching network matches 50 ohm and completed by No. six power combiners.
No. six power combiners 8 export to two delivery outlets into, the first order by secondary groups by six tunnel input ports, the second level by
Two delivery outlets export to a delivery outlet.
The circuit input signal of the present invention is inputted by input 5, and input 5 is connected to six road power by bonding gold wire 9
The input of distributor 7.Input signal is assigned to the 6 of power divider 7 by the amplitudes such as No. six power dividers 7 are equiphase
Road output end.6 tunnel output ends of power divider 7 input matching capacitance 2 by 6 tunnels in bonding gold wire 9 and T-shaped matching network
Connection.Input the input that matching capacitance 2 connects GaN chips 3 by bonding gold wire 9.Radiofrequency signal is amplified by GaN chips 3.
The output end of GaN chips 3 is connected to the output matching electric capacity 4 in T-shaped matching network by bonding gold wire 9.Output matching electric capacity 4
The input for being output to No. six power combiners 8 is connected by bonding gold wire 9.6 tunnel input signals of power combiner 8 are through power
Synthesizer 8 is combined in output end constant amplitude etc..The output end of power combiner 8 connects output end 6 by bonding gold wire 9 again.In figure
R is isolation resistance.Grid and drain electrode between wherein 6 GaN chips 3 are also connected to isolation resistance.Inductance in T-shaped matching network
Realized by bonding gold wire.
There is isolation resistance between shunt capacitance in simulation results show, T-shaped matching network, can prevent device from occurring strange
Mode oscillation；No. six power divider output end uses isolation resistance, can increase the isolation of each port of device and return
Ripple is lost, and prevents device from occurring strange mode oscillation.There is isolation resistance between the grid of GaN chips 3 and drain electrode, prevent device from occurring strange
Mode oscillation.
Power divider carries out impedance matching using transmission line.Transmission line is relatively wide, without ELECTROMIGRATION PHENOMENON, there will not be
Long-term reliability problems.
Bonding gold wire point P1, P2, P3, P4, P5, P6, P7 in the output port of power divider, that is, such as Fig. 3,
P8, P9, P10, P11, P12 phase equalization are controlled within 5 degree, to ensure that the overall power output of device and synthesis are imitated
Rate.
Because device working frequency range is relatively wide, such as 5.3GHz-5.9GHz, the input, output-resistor of GaN chips compares
It is low.First order impedance transformation ratio can not be too big, that is, the Q values of first order impedance conversion are conditional.The such as first order
Impedance transforms to 10 ohm from 1 ohm, and second level power divider transforms to 50 ohm again 10 ohm again.
Described above is only preferred embodiment of the present utility model, it is noted that for the common skill of the art
For art personnel, on the premise of the utility model technical principle is not departed from, some improvement and deformation can also be made, these change
Enter and deform and also should be regarded as protection domain of the present utility model.The principle of the utility model technology, for even by four and the above
The device of several chip compositions is generally applicable, and also should be regarded as protection domain of the present utility model.
Claims (8)
1. a kind of anti-vibration broadband matching circuit of the HIGH-POWERED MICROWAVES device of GaN multichip combinations, it is characterized in that, including be encapsulated in
Input matching circuit, N number of GaN chips and the output matching circuit being sequentially connected in encapsulating package；
Described input matching circuit is divided into two-stage, and the first order is T-shaped matching network, and the second level is N roads power divider；
Described output matching circuit is divided into two-stage, and the first order is T-shaped matching network, and the second level is N roads power combiner；
The unit that the T-shaped matching network is made up of N number of first series inductance, matching capacitance and the second series inductance is constituted；The
One series inductance and the series connection of the second series inductance, its connects end altogether are grounded through inputting matching capacitance；
N roads power divider includes two grades, and the first order exports to two output ports by an input port, the second level by
Two output ports export to N number of output port；
N roads power combiner includes two grades, and the first order exports to two output ports by N number of input port, the second level by
Two output ports export to an output port.
2. a kind of anti-vibration broadband matching circuit of HIGH-POWERED MICROWAVES device of GaN multichip combinations according to claim 1,
It is characterized in that, the impedance conversion Q values of the T-shaped matching network are provided with a upper limit.
3. a kind of anti-vibration broadband matching circuit of HIGH-POWERED MICROWAVES device of GaN multichip combinations according to claim 1,
It is characterized in that, trimmer block is provided with by the matching capacitance in the T-shaped matching network；Matching capacitance and trimmer block pass through
Bonding gold wire is connected.
4. a kind of anti-vibration Broadband Matching electricity of the HIGH-POWERED MICROWAVES device of GaN multichip combinations according to claim 1 or 3
Road, it is characterized in that, matching capacitance is included between two matching capacitances in parallel, two matching capacitances in parallel provided with isolation electricity
Resistance.
5. a kind of anti-vibration broadband matching circuit of HIGH-POWERED MICROWAVES device of GaN multichip combinations according to claim 1,
It is characterized in that, the first series inductance, the second series inductance are realized by bonding gold wire.
6. a kind of anti-vibration broadband matching circuit of HIGH-POWERED MICROWAVES device of GaN multichip combinations according to claim 1,
It is characterized in that, the Sensor gain and phase perturbations of N roads power divider input port are controlled within 5 degree.
7. a kind of anti-vibration broadband matching circuit of HIGH-POWERED MICROWAVES device of GaN multichip combinations according to claim 1,
It is characterized in that, the N roads power divider output end and power combiner input are provided with isolation resistance.
8. a kind of anti-vibration broadband matching circuit of HIGH-POWERED MICROWAVES device of GaN multichip combinations according to claim 1,
It is characterized in that, GaN chip-counts N is the even number not less than 4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720115061.1U CN206490658U (en) | 2017-02-08 | 2017-02-08 | The anti-vibration broadband matching circuit of HIGH-POWERED MICROWAVES device of GaN multichip combinations |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720115061.1U CN206490658U (en) | 2017-02-08 | 2017-02-08 | The anti-vibration broadband matching circuit of HIGH-POWERED MICROWAVES device of GaN multichip combinations |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206490658U true CN206490658U (en) | 2017-09-12 |
Family
ID=59763907
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720115061.1U Expired - Fee Related CN206490658U (en) | 2017-02-08 | 2017-02-08 | The anti-vibration broadband matching circuit of HIGH-POWERED MICROWAVES device of GaN multichip combinations |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206490658U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106656101A (en) * | 2017-02-08 | 2017-05-10 | 江苏博普电子科技有限责任公司 | Anti-oscillation broadband matching circuit of high power microwave device synthesized by multiple GaN chips |
| CN117728145A (en) * | 2024-02-18 | 2024-03-19 | 成都市拾益同创微波科技有限公司 | Six-path power synthesis module |
-
2017
- 2017-02-08 CN CN201720115061.1U patent/CN206490658U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106656101A (en) * | 2017-02-08 | 2017-05-10 | 江苏博普电子科技有限责任公司 | Anti-oscillation broadband matching circuit of high power microwave device synthesized by multiple GaN chips |
| CN117728145A (en) * | 2024-02-18 | 2024-03-19 | 成都市拾益同创微波科技有限公司 | Six-path power synthesis module |
| CN117728145B (en) * | 2024-02-18 | 2024-04-30 | 成都市拾益同创微波科技有限公司 | Six-path power synthesis module |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106656101A (en) | Anti-oscillation broadband matching circuit of high power microwave device synthesized by multiple GaN chips | |
| CN105631109B (en) | A kind of design method of radio frequency ultra wide band high efficiency power amplifier | |
| CN206993063U (en) | A kind of Ku frequency ranges solid-state power combination amplifier | |
| CN104617896B (en) | Continuous inverse F power-like amplifiers and its design method of a kind of broadband high-efficiency | |
| CN206490658U (en) | The anti-vibration broadband matching circuit of HIGH-POWERED MICROWAVES device of GaN multichip combinations | |
| CN204119176U (en) | A kind of high efficiency F class/inverse F power-like amplifier | |
| CN104300925A (en) | High-efficiency class-F and inverse class-F power amplifier | |
| CN106452370A (en) | High-fallback Doherty power amplifier based on asymmetric structure and implementation method of high-fallback Doherty power amplifier | |
| CN109672411A (en) | A kind of asymmetric broadband Doherty power amplifier suitable for 5G low-frequency range full frequency band | |
| US20200204120A1 (en) | Amplifier devices with phase distortion compensation and methods of manufacture thereof | |
| CN103391057A (en) | Reverse F-type power amplifier and emitter as well as processing method | |
| CN206259911U (en) | A kind of power amplifier of distributed two stacked structure for considering Miller effect | |
| CN107517039A (en) | Millimeter wave GaN power amplifier radio frequency distortion linearizing devices | |
| CN106374863B (en) | A kind of Doherty power amplifier and its implementation improving back-off dynamic range | |
| CN103675764B (en) | A kind of all solid state multichannel synthesis microwave power radar transmitter | |
| CN104377416A (en) | Broadband matching circuit applicable to C-wave-band GaN microwave high power device | |
| CN104579178A (en) | Broadband input matching based improved doherty power amplifier | |
| CN110011623A (en) | A kind of incorgruous power amplifier of dual band radio frequency | |
| CN102969986B (en) | Output circuit structure of radio frequency power amplifier | |
| CN204230399U (en) | A kind of broadband matching circuit being applicable to C-band GaN microwave high power device | |
| CN104052696A (en) | Integrated downlink system and processing method thereof | |
| CN109274339A (en) | A kind of Doherty driving Doherty power amplifier | |
| CN201860298U (en) | Linear channel amplifier | |
| CN103178483B (en) | A kind of radio-frequency signal source and reverse protection method with reverse protection function | |
| CN206490651U (en) | A kind of C-band high-gain GaN microwave power amplifier circuits |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170912 Termination date: 20210208 |