CN103391057A - Reverse F-type power amplifier and emitter as well as processing method - Google Patents

Reverse F-type power amplifier and emitter as well as processing method Download PDF

Info

Publication number
CN103391057A
CN103391057A CN2012101466353A CN201210146635A CN103391057A CN 103391057 A CN103391057 A CN 103391057A CN 2012101466353 A CN2012101466353 A CN 2012101466353A CN 201210146635 A CN201210146635 A CN 201210146635A CN 103391057 A CN103391057 A CN 103391057A
Authority
CN
China
Prior art keywords
power
amplifier
impedance
contrary
harmonic wave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2012101466353A
Other languages
Chinese (zh)
Inventor
刘江涛
张占胜
蒋祥茂
谢路平
林锡贵
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Comba Network Systems Co Ltd
Original Assignee
Comba Telecom Systems China Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Comba Telecom Systems China Ltd filed Critical Comba Telecom Systems China Ltd
Priority to CN2012101466353A priority Critical patent/CN103391057A/en
Publication of CN103391057A publication Critical patent/CN103391057A/en
Pending legal-status Critical Current

Links

Images

Landscapes

  • Amplifiers (AREA)

Abstract

The invention discloses a reverse F-type power amplifier and an emitter as well as a processing method. The main contents are that the reverse F-type power amplifier comprises a power amplifying part, and a harmonic wave control circuit comprising a third harmonic wave short-circuit circuit and a second harmonic wave open-circuit circuit; after being amplified by the power amplifier, the input radio frequency signal is input to the harmonic wave control circuit through the input end of the harmonic wave control circuit; in the harmonic control circuit, the input radio frequency signal passes by the third harmonic wave short-circuit circuit and the second open-circuit circuit in sequence, and is output by the output end of the harmonic wave control circuit; and the linear effect of an impedance micro-strip on the radio frequency is reduced, the non-linear feature of the power amplifier is effectively corrected, the effect on VBW (Video Band Width) of the power amplifier caused by the inductive effect of the impedance micro-strip in the prior art is effectively reduced, and the linear effect of the radio frequency signal amplified by the power amplifier is improved.

Description

A kind of contrary F power-like amplifier, reflector and processing method
Technical field
The present invention relates to the radio-frequency power amplifying technique, relate in particular to a kind of contrary F power-like amplifier, reflector and processing method.
Background technology
Along with the development of mobile communication cause, a large amount of radio-frequency power amplifiers is widely used in various radio communication transmitters.Owing to adopting now multi-transceiver technology to carry out the transmission of signal, and carrier wave can produce larger peak-to-average force ratio when synthetic, cause the non-linear effect extreme difference of signal, and this has just proposed very high requirement to the linear properties of radio communication transmitter.
In the prior art, back-off technology, feed-forward technique and pre-distortion technology are the linearizing common technologies of realizing power amplifier.As shown in Figure 1, circuit theory diagrams for traditional AB power-like amplifier, the AB power-like amplifier is comprised of input matching circuit, low pressure and low power amplifier and output matching circuit, wherein the low pressure and low power amplifier can be the LDMOS(Laterally Diffused Metal Oxide Semiconductor) power amplifier, GaAs(GaAs) power amplifier or GaN(gallium nitride) power amplifier etc. is to utilize the back-off technology to realize the linearisation demand of output signal.
Particularly, increase along with the input power of the signal that inputs to power amplifier, the operating state of power amplifier will progress into saturation region, but after the operating state of power amplifier enters saturation region, the gain of power amplifier output power will descend gradually; For the operating state that makes power amplifier away from saturation region, when the operating state of power amplifier is about to enter saturation region, numerical value with the setting of the input power rollback of power amplifier, make the operating state of power amplifier away from saturation region, the linear work district of ingoing power amplifier, guaranteed that like this signal of input after the power amplifier amplifieroperation, meets linear demand during output.
Although power amplifier adopts the back-off technology to meet the requirement of linear aspect, this technology causes its operating efficiency lower, this be because of:
In traditional AB power-like amplifier, its importation and output have only carried out the first-harmonic coupling, and radiofrequency signal is after power amplifier, due to the feature of non-linearity of power amplifier, cause the harmonic power consumption of signal, make traditional AB power-like amplifier maximal efficiency in theory be
Figure BDA00001631181200021
Wherein, V FundFor the output voltage in load, V ddFor direct voltage; Add power amplifier and adopted the back-off technology, make the efficiency of traditional AB power-like amplifier sharply descend, energy loss is quite serious.
Along with the development of modern communication technology, the efficiency of power amplifier more and more is concerned.And the Doherty technology of power amplifier is considered to improve the most promising a kind of structure of efficiency power amplifier.
As shown in Figure 2, be the schematic diagram of 2 traditional road Doherty power amplifiers, this Doherty power amplifier comprises: the AB power-like amplifier of power divider, two-way parallel connection and two load-modulate networks with little band composition of impedance of λ/4.
Wherein, the power division ratio of power divider is 1:1, each power amplifier one end is connected with a road of power divider, the other end of one of them power amplifier is connected with a little band of impedance with λ/4, connects the little band of impedance with λ/4 on the power amplifier De He road of two-way.
In addition, also exist as shown in Figure 3, be the schematic diagram of 3 traditional road Doherty power amplifiers, this Doherty power amplifier comprises: the AB power-like amplifier of power divider, three tunnel parallel connections and 4 load-modulate networks that the little band of the impedance with λ/4 forms.
Wherein, the power division ratio of power divider is 1:1:1, each power amplifier one end is connected with a road of power divider, the other end of each power amplifier is connected with a little band of impedance with λ/4, connects the little band of impedance with λ/4 on the power amplifier De He road on three tunnels.
Wherein, the power amplifier that connects in Fig. 2 is traditional contrary F power-like amplifier.As shown in Figure 4, for the contrary F power-like amplifier of tradition and circuit theory diagrams, this power-like amplifier has adopted the Doherty technology, be comprised of input matching circuit, low pressure low-power amplifier, harmonic wave control circuit and output matching circuit, input matching circuit is connected with the input of harmonic wave control circuit by the low pressure low-power amplifier; The output of harmonic wave control circuit is connected with output matching circuit.
Wherein, the harmonic wave control circuit comprises second harmonic open-circuit and triple-frequency harmonics short circuit current, and wherein, the second harmonic open circuit is connected with the input of harmonic wave control circuit with an end by the first impedance is little, and the other end is connected with the second little band of impedance; The triple-frequency harmonics short circuit comprises the first little band of impedance, the 3rd little band of impedance, the 4th little band of impedance, wherein, the first impedance little with an end be connected with the input of harmonic wave control circuit, an end of the 3rd little band of impedance is connected with the tie point of the second little band of impedance with the first little band of impedance, the other end of the 3rd little band of impedance is connected with the 4th little band of impedance.
Wherein, the first little band of impedance is that λ/8, the second little bands of impedance are that λ/4, the three little bands of impedance are that λ/24, the four little bands of impedance are λ/12.
In order by the harmonic wave control circuit to be the drain electrode power supply of power amplifier, (this moment, one end of the first electric capacity was connected with the second little band of impedance can to connect the first electric capacity at the other end of the second little band of impedance of second harmonic open-circuit, other end ground connection), additional drain bias voltage and between the second little band of impedance and the first electric capacity.
When input matching circuit receives radio-frequency input signals, to receive radiofrequency signal and export the harmonic wave control circuit to after power amplifier carries out amplifieroperation, first via the second harmonic open-circuit in the harmonic wave control circuit,, via exporting output matching circuit to after the triple-frequency harmonics short circuit current, by output matching circuit, radiofrequency signal is carried out exporting after the first-harmonic coupling again.
Owing to having used the harmonic wave control circuit, avoided the problem that in traditional AB power-like amplifier, harmonic power exhausts, make the contrary F power-like amplifier of tradition in the efficiency of saturation power be
Figure BDA00001631181200031
Wherein, V outFor the output voltage in load, V ddFor direct voltage; Improved nearly 10% with respect to traditional AB power-like amplifier efficiency; But the external voltage of second harmonic open circuit access in the harmonic wave control circuit, under the effect of external voltage, the first little band of impedance Z1, second impedance little band Z2 and the first capacitor C 1 are united generation equivalent inductance L eff, it is together with the intrinsic direct-to-ground capacitance C of power amplifier Shut, can obtain video frequencies
Figure BDA00001631181200032
, owing at Z1, Z2, C1, constituting jointly the second harmonic open-circuit, make simultaneously equivalent inductance L effLarger, the VBW(Video BandWidth that causes power amplifier, the video width) weak effect, radiofrequency signal has memory effect through amplifier, that is to say, it is poor that the radiofrequency signal after causing power amplifier to pre-distortion is carried out the linear effects of the radiofrequency signal that obtains after amplifieroperation.
Based on this problem, if simply remove in the harmonic wave control circuit the first little band of impedance that the second harmonic circuit comprises, to cause the desired second harmonic impedance of second harmonic open circuit in the harmonic wave control circuit, and the desired triple-frequency harmonics impedance of triple-frequency harmonics short circuit all can not reach the effect of the harmonic wave that controls the radiofrequency signal generation.
In sum, adopt in the prior art the power amplifier of Doherty technology to have the poor problem of linear effects.
Summary of the invention
The embodiment of the present invention provides a kind of contrary F power-like amplifier, reflector and processing method, and there is the poor problem of linear effects in the power amplifier that is used for available technology adopting Doherty technology.
A kind of contrary F power-like amplifier, this contrary F power-like amplifier comprises: power amplifier parts and the harmonic wave control circuit that comprises triple-frequency harmonics short circuit current and second harmonic open-circuit, wherein:
The power amplifier parts, after being used for radiofrequency signal is carried out the power amplification operation, the input by the harmonic wave control circuit inputs to the harmonic wave control circuit;
The radiofrequency signal of inputting in the harmonic wave control circuit is first through the triple-frequency harmonics short circuit current, again after the second harmonic open-circuit, by the output output of harmonic wave control circuit;
In described triple-frequency harmonics short circuit current, an end of the first little band of impedance is connected with the input of harmonic wave control circuit, and the other end is connected with the first electric capacity, and between the first little band of impedance and the first electric capacity additional drain bias voltage, the other end ground connection of the first electric capacity;
One end of the 3rd little band of impedance in described second harmonic open-circuit is connected with the tie point of the input of harmonic wave control circuit with the first little band of impedance, and the other end is connected with the output of harmonic wave control circuit with the 4th little band of impedance in the second harmonic open-circuit.
A kind of method of based on contrary F power-like amplifier, carrying out the signal amplification, the method comprises:
Power amplifier after receiving radiofrequency signal, after this radiofrequency signal is carried out amplifieroperation, exports the input port of harmonic wave control circuit to;
Radiofrequency signal in the harmonic wave control circuit is first through the triple-frequency harmonics short circuit, again after the second harmonic open-circuit, by the output output of harmonic wave control circuit.
A kind of signal projector that comprises contrary F power-like amplifier, this signal projector also comprises: pre-distortion unit and feedback unit, wherein:
The pre-distortion unit, after being used for the radiofrequency signal that receives is carried out pre-distortion, export contrary F power-like amplifier to; And the parameter information that receives the sampling point signal of feedback unit generation, utilize this parameter information to adjust pre-distortion coefficients, and after the pre-distortion coefficients after the next radiofrequency signal utilization adjustment that receives is carried out pre-distortion, export contrary F power-like amplifier to;
Contrary F power-like amplifier, be used for receiving the radiofrequency signal after pre-distortion, output after power amplification operation and harmonic wave suppress to process;
Feedback unit, the radiofrequency signal that is used for gathering contrary F power-like amplifier output, as sampling point signal, after this sampling point signal is carried out down-conversion and analog-to-digital conversion, is extracted the parameter information of this sampling point signal, and this parameter information is fed back to the pre-distortion unit.
A kind of signal processing method of signal projector, the method comprises:
The digital pre-distortion unit when receiving radio-frequency input signals, utilizes pre-distortion coefficients to carry out pre-distortion to this radiofrequency signal, and output;
After contrary F power-like amplifier carries out the power amplification operation to the pre-distortion unit outputting analog signal, first through the triple-frequency harmonics short circuit, again after the second harmonic open-circuit, by the output output of harmonic wave control circuit;
Feedback unit gathers the radiofrequency signal of contrary F power-like amplifier output, after this radiofrequency signal is carried out down-conversion and analog-to-digital conversion, extracts the parameter information of this radiofrequency signal, and feeds back to the pre-distortion unit;
The pre-distortion unit receives the parameter information of the sampling point signal of feedback unit generation, utilizes this parameter information to adjust pre-distortion coefficients, and the pre-distortion coefficients after the next radiofrequency signal utilization adjustment that receives is carried out pre-distortion.
Beneficial effect of the present invention is as follows:
The embodiment of the present invention should comprise a power amplifier element and the harmonic wave control circuit that comprises triple-frequency harmonics short circuit current and second harmonic open-circuit by contrary F power-like amplifier, the radiofrequency signal of input is after power amplifier carries out amplifieroperation, and the input by the harmonic wave control circuit inputs to the harmonic wave control circuit; In the harmonic wave control circuit, the radiofrequency signal of this input is first through the triple-frequency harmonics short circuit current, again after the second harmonic open-circuit, by the output output of harmonic wave control circuit; Wherein, load external voltage in the triple-frequency harmonics short circuit current, and while meeting the required triple-frequency harmonics impedance conditions of triple-frequency harmonics short circuit, reduced the linear effect of the little band of impedance to radiofrequency signal, effectively proofreaied and correct the nonlinear characteristic of power amplifier, effectively reduced in the prior art due to the impact on the VBW of power amplifier of the inductive effect of the little band of impedance, improved the linear effects of the radiofrequency signal after power amplifier amplifies.
Description of drawings
Fig. 1 is the circuit theory diagrams of traditional AB power-like amplifier;
Fig. 2 is the schematic diagram of traditional 2 road Doherty power amplifiers;
Fig. 3 is the schematic diagram of traditional 3 road Doherty power amplifiers;
Fig. 4 is the contrary F power-like amplifier of tradition and circuit theory diagrams;
Fig. 5 is the structural representation of a kind of contrary F power-like amplifier of the embodiment of the present invention one;
Fig. 6 is a kind of flow chart that utilizes contrary F power-like amplifier to carry out the method for signal amplification of the embodiment of the present invention two;
Fig. 7 is a kind of structural representation that has comprised the signal projector of contrary F power-like amplifier of the embodiment of the present invention three;
Fig. 8 is contrary F power-like amplifier and power amplifier schematic diagram;
Fig. 9 is a kind of flow chart that utilizes signal projector to carry out the method for signal processing of the present embodiment four.
Embodiment
In order to realize purpose of the present invention, the embodiment of the present invention provides a kind of contrary F power-like amplifier, reflector and processing method, should comprise a power amplifier element and the harmonic wave control circuit that comprises triple-frequency harmonics short circuit current and second harmonic open-circuit by contrary F power-like amplifier, the radiofrequency signal of input is after power amplifier carries out amplifieroperation, and the input by the harmonic wave control circuit inputs to the harmonic wave control circuit; In the harmonic wave control circuit, the radiofrequency signal of this input is first through the triple-frequency harmonics short circuit current, again after the second harmonic open-circuit, by the output output of harmonic wave control circuit; Wherein, load external voltage in the triple-frequency harmonics short circuit current, and while meeting the required triple-frequency harmonics impedance conditions of triple-frequency harmonics short circuit, reduced the linear effect of the little band of impedance to radiofrequency signal, effectively proofreaied and correct the nonlinear characteristic of power amplifier, effectively reduced in the prior art due to the impact on the VBW of power amplifier of the inductive effect of the little band of impedance, improved the linear effects of the radiofrequency signal after power amplifier amplifies.
Below in conjunction with Figure of description, the embodiment of the present invention is described in detail.
Embodiment one:
As shown in Figure 5, a kind of structural representation against the F power-like amplifier for the embodiment of the present invention one, should comprise by contrary F power-like amplifier: power amplifier element 41 and the harmonic wave control circuit 42 that comprises triple-frequency harmonics short circuit current 421 and second harmonic open-circuit 422, wherein:
Power amplifier element 41, after being used for radiofrequency signal is carried out amplifieroperation, the input A by the harmonic wave control circuit inputs to the harmonic wave control circuit;
The radiofrequency signal of inputting in the harmonic wave control circuit is first through the triple-frequency harmonics short circuit current, again after the second harmonic open-circuit, by the output B output of harmonic wave control circuit.
Particularly, described power amplifier element can be the Si-LDMOS device that Lou the level bias voltage is 50 volts, drain-source electric capacity is less, adopt the power tube of this device can effectively improve the power density of power tube, reduce the size of power amplifier, make the peak power output of the contrary F power-like amplifier of the present invention reach 160W.
Described harmonic wave control circuit 42 comprises triple-frequency harmonics short circuit current 421 and second harmonic open-circuit 422, wherein,
Described triple-frequency harmonics short circuit current 421 comprises: the little end with Z1 of the first impedance is connected with the input of harmonic wave control circuit, the other end is connected with the first capacitor C 1, and additional drain bias voltage between first impedance little band Z1 and the first capacitor C 1, the other end ground connection of the first capacitor C 1;
Comprising in described second harmonic open-circuit 422: the little end with Z3 of the 3rd impedance is connected with the tie point of the input of harmonic wave control circuit with Z1 with the first impedance is little, and the other end is connected with the output of harmonic wave control circuit with Z4 with the 4th impedance in the second harmonic open-circuit is little.
Wherein, the span of the little Microstrip Length with Z1 of described the first impedance is: (λ/6 ± λ/36), and meet: the condition of the triple-frequency harmonics impedance that the triple-frequency harmonics short circuit is required, the triple-frequency harmonics impedance is determined to obtain by following formula: (Z 3th=jZ m1The 3d of tg[(2 π/λ) 1]), wherein, Z m1The little characteristic impedance with Z1 of the first impedance, d 1For its Microstrip Length.
More preferably, the little Microstrip Length with Z1 of described impedance is λ/6.
The little span with Z3 and the little Microstrip Length with Z4 of the 4th impedance of described the 3rd impedance is: (λ/8-λ/120)~λ/8, and meet: the condition of the second harmonic impedance that the second harmonic open circuit is required, the second harmonic impedance is determined to obtain by following formula:
Z′ 2th=-jZ m4The 2d of ctg[(2 π/λ) 4], Z 2th=jZ m3The 2d of tg[(2 π/λ) 3], wherein, Z ' 2thBe that the 3rd impedance is little with Z3 and the little impedance of second harmonic with the Z4 junction of the 4th impedance, Z 2thFor final second harmonic impedance, d 3And d 4Be respectively the 3rd impedance little with Z3 and the little Microstrip Length with Z4 of the 4th impedance.
More preferably, the little Microstrip Length with Z3 of described the 3rd impedance is λ/8, and the little Microstrip Length with Z4 of described the 4th impedance is λ/8.
In the circuit of second harmonic open circuit,, because the second harmonic impedance of determining is high resistant, can suppress like this output of radiofrequency signal second harmonic, reduced the power consumption of radiofrequency signal.
More preferably, described triple-frequency harmonics short circuit current 421, also comprise: the little end with Z2 of the second impedance is connected with the input of harmonic wave control circuit, the other end is connected with the second capacitor C 2, and additional drain bias voltage between second impedance little band Z2 and the second capacitor C 2, the other end ground connection of the second capacitor C 2.
Wherein, the span of the little Microstrip Length with Z2 of described the second impedance is: λ/6 ± λ/36, and meet:
(Z 3th=jZ m2The 3d of tg[(2 π/λ) 2]), wherein, Z m2The little characteristic impedance with Z2 of impedance, d 2For its Microstrip Length.
More preferably, the little Microstrip Length with Z2 of described the second impedance is λ/6.
Owing to having comprised two parts in the triple-frequency harmonics short circuit current: a part is comprised of first impedance little band Z1 and the first capacitor C 1; Another part is comprised of second impedance little band Z2 and the second capacitor C 2; These two parts belong to relation in parallel, and obtain the required triple-frequency harmonics impedance of triple-frequency harmonics short circuit after merging by the little triple-frequency harmonics impedance of determining with Z1 of the first impedance with by the little triple-frequency harmonics impedance of determining with Z2 of the second impedance.
Double offset voltage is set in the triple-frequency harmonics short circuit, the drain electrode for power amplifier of similar parallel connection provides power supply, effectively reduces video impedance, has improved the VBW performance.
More preferably, described contrary F power-like amplifier, also comprise: Input matching unit 43 and output matching unit 44.Wherein:
Input matching unit 43, be used for the numerical value of input source impedance configuration for setting, and the radiofrequency signal that will receive exports power amplifier to;
Output matching unit 44, be used for the numerical value of the load impedance that will export configuration to described setting, and with the radiofrequency signal output of harmonic wave control circuit output.
The numerical value of described setting is set usually according to actual needs, is generally 50 ohm.
Scheme by the present embodiment one, load external voltage in the triple-frequency harmonics short circuit current, and while meeting the required triple-frequency harmonics impedance conditions of triple-frequency harmonics short circuit, reduced the linear effect of the little band of impedance to radiofrequency signal, effectively proofreaied and correct the nonlinear characteristic of power amplifier, avoided in the prior art having improved the linear effects of the radiofrequency signal after power amplifier amplifies due to the impact on the VBW of radiofrequency signal of the inductive effect of the little band of impedance.
Embodiment two:
As shown in Figure 6, be a kind of flow chart that utilizes contrary F power-like amplifier to carry out the method for signal amplification of the embodiment of the present invention two, the method comprises:
Step 201: the Input matching unit when the input source impedance configuration is the numerical value of setting, exports the radiofrequency signal that receives to power amplifier.
In step 201, the Input matching unit when receiving the radiofrequency signal of input, is configured to 50 Europe with the source impedance of Input matching unit.
Step 202: power amplifier after receiving described radiofrequency signal, after this radiofrequency signal is carried out amplifieroperation, exports the input port of harmonic wave control circuit to.
Step 203: the radiofrequency signal in the harmonic wave control circuit is first through the triple-frequency harmonics short circuit, again after the second harmonic open-circuit, by the output output of harmonic wave control circuit.
Particularly, radiofrequency signal in the harmonic wave control circuit is first utilized self external leakage level bias voltage by the triple-frequency harmonics short circuit, reduce the little band equivalent inductance of biasing impedance value, the interference of inhibition to the radiofrequency signal first-harmonic, the second harmonic impedance of being determined by the utilization of second harmonic open-circuit again suppresses the output of the second harmonic of radiofrequency signal generation, and the output port via the harmonic wave control circuit exports this radiofrequency signal to the output matching unit afterwards.
Step 204: the output matching unit when the radiofrequency signal that receives after the harmonic wave control circuit is processed, is configured to output load impedance the numerical value of described setting, and with this radiofrequency signal output.
In step 204, output load impedance is configured to 50 ohm.
In the scheme of the present embodiment two, contrary F power-like amplifier can be replaced the contrary F power-like amplifier of tradition in Fig. 2, realizes the output of high efficiency power amplifier.Suppose to be the 1:1 power divider at the input port access power ratio of contrary F power-like amplifier, wherein, power divider connects contrary F power-like amplifier and an impedance Microstrip Length is the quarter-wave transformation line, and be that quarter-wave is adjusted by an impedance Microstrip Length in this two-way De He road, make so the little signal of power through contrary F power-like amplifier the time, making load impedance is 100 ohm, thereby realizes that the efficiency at the contrary F class Doherty power amplifier of back-off 6dB is 58%.
In the scheme of the present embodiment two, contrary F power-like amplifier can be replaced traditional AB power-like amplifier in Fig. 3, realizes the output of high efficiency power amplifier.Suppose that the input port access power ratio at contrary F power-like amplifier is 1: the power divider of 1:1, wherein, the power divider on each road all connects contrary F power-like amplifier and an impedance Microstrip Length is quarter-wave the coupling, and be that quarter-wave is adjusted by an impedance Microstrip Length in Zai Zhesan Lu Dehe road, make so the little signal of power through contrary F power-like amplifier the time, making load impedance is 150 ohm, thereby realizes that the efficiency at the contrary F class Doherty power amplifier of back-off 6dB is 60%.
Embodiment three:
As shown in Figure 7, be a kind of structural representation that has comprised the signal projector of contrary F power-like amplifier of the embodiment of the present invention three, this signal projector also comprises: pre-distortion unit 61 and feedback unit 62, wherein:
Pre-distortion unit 61, after being used for the radiofrequency signal that receives is carried out pre-distortion, export contrary F power-like amplifier to; And the parameter information that receives the sampling point signal of feedback unit generation, utilize this parameter information to adjust pre-distortion coefficients, and after the pre-distortion coefficients after the next radiofrequency signal utilization adjustment that receives is carried out pre-distortion, export contrary F power-like amplifier to;
Contrary F power-like amplifier 63, be used for receiving the radiofrequency signal after pre-distortion, output after power amplification operation and harmonic wave suppress to process;
Feedback unit 62, the radiofrequency signal that is used for gathering contrary F power-like amplifier output, as sampling point signal, after this sampling point signal is carried out down-conversion and analog-to-digital conversion, is extracted the parameter information of this sampling point signal, and this parameter information is fed back to the pre-distortion unit.
Particularly, described transmitter also comprises: down-conversion and AD conversion unit 64, digital-to-analogue conversion and up-conversion unit 65, wherein,
Down-conversion and AD conversion unit 64, the radiofrequency signal that is used for receiving is carried out down-conversion and analog-to-digital conversion, and the digital signal that obtains sends to the pre-distortion unit;
Digital-to-analogue conversion and up-conversion unit 65, be used for the digital signal after pre-distortion obtaining corresponding radiofrequency signal after digital-to-analogue conversion and upconversion process, and send to contrary F power-like amplifier.
need to prove, contrary F power-like amplifier in signal projector can be single power amplifier as shown in Figure 5, it can also be the contrary F power-like amplifier with Doherty function, as shown in Figure 8, namely on the basis of Fig. 3, power amplifier in Fig. 3 is transformed to contrary F power-like amplifier, can realize the power amplifier principle of contrary F power-like amplifier, in order to realize the normal power of contrary F power-like amplifier, one of input design at contrary F power-like amplifier drives power amplifier, and design automatic gain Circuit tuning (AGC) and automated power Circuit tuning (ALC) before the circuit that drives power amplifier, make the power amplifier can steady operation.Coupler of output series connection at contrary F power-like amplifier, signal to contrary F power-like amplifier output is sampled, be used on the one hand the reference of AGC or alc circuit, give on the other hand the digital pre-distortion feedback signal, realize the high efficiency output of contrary F power-like amplifier.
Embodiment four:
As shown in Figure 9, be a kind of flow chart that utilizes signal projector to carry out the method for signal processing of the present embodiment four, the method comprises:
Step 401: the digital pre-distortion unit when receiving radio-frequency input signals, utilizes pre-distortion coefficients to carry out pre-distortion to this radiofrequency signal, and output.
Particularly, in this step 401, before the digital pre-distortion unit carries out pre-distortion to the received signal, at first the radiofrequency signal of input is converted to intermediate-freuqncy signal through down-conversion operation with radiofrequency signal, pass through again analog-to-digital conversion, this intermediate-freuqncy signal is converted to digital signal, the digital signal after conversion is sent to the pre-distortion unit.
Wherein, the frequency of the intermediate-freuqncy signal after conversion can be 92.16MHZ.
Step 402: after contrary F power-like amplifier carries out the power amplification operation to the pre-distortion unit outputting analog signal, first through the triple-frequency harmonics short circuit, again after the second harmonic open-circuit, by the output output of harmonic wave control circuit.
Particularly, contrary F power-like amplifier receives the radiofrequency signal of pre-distortion unit output is carried out the analog signal that obtains after digital-to-analogue conversion and up-conversion, after this analog signal is carried out the power amplification operation, output after processing via the inhibition of triple-frequency harmonics short circuit and second harmonic open circuit successively.
In step 402, digital signal from after the pre-distortion of digital pre-distortion unit output, after digital-to-analogue conversion, convert this digital signal to analog signal, and with this analog signal after upconversion process, the radiofrequency signal that obtains is sent to contrary F power-like amplifier.
The frequency of the analog signal that wherein, converts to can be the analog signal of 138.24MHZ.
Step 403: feedback unit gathers the radiofrequency signal of contrary F power-like amplifier output, after this radiofrequency signal is carried out down-conversion and analog-to-digital conversion, extracts the parameter information of this radiofrequency signal, and feeds back to the pre-distortion unit.
Step 404: the pre-distortion unit receives the parameter information of the sampling point signal of feedback unit generation, utilizes this parameter information to adjust pre-distortion coefficients, and the pre-distortion coefficients after the next radiofrequency signal utilization adjustment that receives is carried out pre-distortion.
Obviously, those skilled in the art can carry out various changes and modification and not break away from the spirit and scope of the present invention the present invention.Like this, if within of the present invention these are revised and modification belongs to the scope of the claims in the present invention and equivalent technologies thereof, the present invention also is intended to comprise these changes and modification interior.

Claims (10)

1. a contrary F power-like amplifier, is characterized in that, this contrary F power-like amplifier comprises: power amplifier parts and the harmonic wave control circuit that comprises triple-frequency harmonics short circuit current and second harmonic open-circuit, wherein:
The power amplifier parts, after being used for radiofrequency signal is carried out amplifieroperation, the input by the harmonic wave control circuit inputs to the harmonic wave control circuit;
The radiofrequency signal of inputting in the harmonic wave control circuit is first through the triple-frequency harmonics short circuit current, again after the second harmonic open-circuit, by the output output of harmonic wave control circuit;
In described triple-frequency harmonics short circuit current, an end of the first little band of impedance is connected with the input of harmonic wave control circuit, and the other end is connected with the first electric capacity, and between the first little band of impedance and the first electric capacity additional drain bias voltage, the other end ground connection of the first electric capacity;
One end of the 3rd little band of impedance in described second harmonic open-circuit is connected with the tie point of the input of harmonic wave control circuit with the first little band of impedance, and the other end is connected with the output of harmonic wave control circuit with the 4th little band of impedance in the second harmonic open-circuit.
2. contrary F power-like amplifier as claimed in claim 1, is characterized in that, described triple-frequency harmonics short circuit current also comprises:
One end of the second little band of impedance is connected with the input of harmonic wave control circuit, and the other end is connected with the second electric capacity, and between the second little band of impedance and the second electric capacity additional drain bias voltage, the other end ground connection of the second electric capacity.
3. contrary F power-like amplifier as claimed in claim 1 or 2, is characterized in that, described contrary F power-like amplifier also comprises:
The Input matching unit, be used for the numerical value of input source impedance configuration for setting, and the radiofrequency signal that will receive exports power amplifier to;
The output matching unit, be used for the numerical value of the load impedance that will export configuration to described setting, and with the radiofrequency signal output of harmonic wave control circuit output.
4. contrary F power-like amplifier as claimed in claim 2, is characterized in that,
The span of the Microstrip Length of described the first little band of impedance and the second little band of impedance is: λ/6 ± λ/36, and meet: the triple-frequency harmonics impedance is less than 3 ohm.
5. contrary F power-like amplifier as claimed in claim 4, is characterized in that,
The Microstrip Length of described the first little band of impedance is λ/6, and the Microstrip Length of described the second little band of impedance is λ/6.
6. contrary F power-like amplifier as claimed in claim 1, is characterized in that,
The span of the Microstrip Length of described the 3rd little band of impedance and the 4th little band of impedance is: (λ/8-λ/120)~λ/8, and meet: the second harmonic impedance is greater than 300 ohm.
7. contrary F power-like amplifier as claimed in claim 6, is characterized in that,
The Microstrip Length of described the 3rd little band of impedance is λ/8, and the Microstrip Length of described the 4th little band of impedance is λ/8.
8. one kind is carried out based on the arbitrary described contrary F power-like amplifier of claim 1 to 7 method that signal amplifies, and it is characterized in that, the method comprises:
Power amplifier after receiving radiofrequency signal, after this radiofrequency signal is carried out amplifieroperation, exports the input port of harmonic wave control circuit to;
Radiofrequency signal in the harmonic wave control circuit is first through the triple-frequency harmonics short circuit, again after the second harmonic open-circuit, by the output output of harmonic wave control circuit.
9. a signal projector that comprises the arbitrary described contrary F power-like amplifier of claim 1 to 7, is characterized in that, this signal projector also comprises: pre-distortion unit and feedback unit, wherein:
The pre-distortion unit, after being used for the radiofrequency signal that receives is carried out pre-distortion, export contrary F power-like amplifier to; And the parameter information that receives the sampling point signal of feedback unit generation, utilize this parameter information to adjust pre-distortion coefficients, and after the pre-distortion coefficients after the next radiofrequency signal utilization adjustment that receives is carried out pre-distortion, export contrary F power-like amplifier to;
Contrary F power-like amplifier, be used for receiving the radiofrequency signal after pre-distortion, output after power amplification operation and harmonic wave suppress to process;
Feedback unit, the radiofrequency signal that is used for gathering contrary F power-like amplifier output, as sampling point signal, after this sampling point signal is carried out down-conversion and analog-to-digital conversion, is extracted the parameter information of this sampling point signal, and this parameter information is fed back to the pre-distortion unit.
10. the signal processing method based on the signal projector of claim 9, is characterized in that, the method comprises:
The digital pre-distortion unit when receiving radio-frequency input signals, utilizes pre-distortion coefficients to carry out pre-distortion to this radiofrequency signal, and output;
After contrary F power-like amplifier carries out the power amplification operation to the pre-distortion unit outputting analog signal, first through the triple-frequency harmonics short circuit, again after the second harmonic open-circuit, by the output output of harmonic wave control circuit;
Feedback unit gathers the radiofrequency signal of contrary F power-like amplifier output, after this radiofrequency signal is carried out down-conversion and analog-to-digital conversion, extracts the parameter information of this radiofrequency signal, and feeds back to the pre-distortion unit;
The pre-distortion unit receives the parameter information of the sampling point signal of feedback unit generation, utilizes this parameter information to adjust pre-distortion coefficients, and the pre-distortion coefficients after the next radiofrequency signal utilization adjustment that receives is carried out pre-distortion.
CN2012101466353A 2012-05-11 2012-05-11 Reverse F-type power amplifier and emitter as well as processing method Pending CN103391057A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2012101466353A CN103391057A (en) 2012-05-11 2012-05-11 Reverse F-type power amplifier and emitter as well as processing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2012101466353A CN103391057A (en) 2012-05-11 2012-05-11 Reverse F-type power amplifier and emitter as well as processing method

Publications (1)

Publication Number Publication Date
CN103391057A true CN103391057A (en) 2013-11-13

Family

ID=49535234

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2012101466353A Pending CN103391057A (en) 2012-05-11 2012-05-11 Reverse F-type power amplifier and emitter as well as processing method

Country Status (1)

Country Link
CN (1) CN103391057A (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103618507A (en) * 2013-12-16 2014-03-05 北京美电环宇科技有限公司 Radio frequency power amplifier system and lighting equipment
WO2015085742A1 (en) * 2013-12-13 2015-06-18 中兴通讯股份有限公司 Radio-frequency power amplifier, base station, and impedance adjustment method
CN104953961A (en) * 2015-06-17 2015-09-30 深圳市华讯方舟微电子科技有限公司 Double-stage inversing D-class power amplifying circuit and radio frequency power amplifier
CN106301254A (en) * 2016-07-27 2017-01-04 杭州电子科技大学 Harmonic match structure that a kind of high efficiency and broad band is orderly and Harmonic Control Method thereof
CN107425814A (en) * 2017-08-07 2017-12-01 杭州电子科技大学 A kind of broadband Doherty power amplifier based on compensation parasitic capacitance
CN107453722A (en) * 2017-06-12 2017-12-08 合肥市汤诚集成电路设计有限公司 Charge pump is adaptively boosted F class power amplifiers
CN109039369A (en) * 2018-08-16 2018-12-18 Oppo(重庆)智能科技有限公司 Radio circuit and electronic equipment
WO2019015276A1 (en) * 2017-07-21 2019-01-24 深圳市景程信息科技有限公司 Two-line output matching network for inverse class-f power amplifier
CN109286377A (en) * 2017-07-21 2019-01-29 中兴通讯股份有限公司 The linearization process circuit and method of radiofrequency signal
CN109981058A (en) * 2017-12-27 2019-07-05 株式会社村田制作所 Match circuit and power amplification circuit
WO2019153328A1 (en) * 2018-02-12 2019-08-15 华为技术有限公司 Power adjustment method and apparatus
WO2021212727A1 (en) * 2020-04-23 2021-10-28 广州慧智微电子有限公司 Radio frequency power amplifier capable of performing harmonic suppression

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101110571A (en) * 2007-08-30 2008-01-23 京信通信系统(中国)有限公司 Digital pre-distorting power amplifier and implementing method thereof
CN201360242Y (en) * 2009-03-06 2009-12-09 电子科技大学 Millimeter-wave single-chip integrated power amplifier
EP2262107A1 (en) * 2009-06-10 2010-12-15 Alcatel Lucent Inverse class F amplifier and method
CN102111114A (en) * 2010-11-30 2011-06-29 东南大学 Design method for reverse class-F power amplifier based on 3/4 spiral virtual ground structure

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101110571A (en) * 2007-08-30 2008-01-23 京信通信系统(中国)有限公司 Digital pre-distorting power amplifier and implementing method thereof
CN201360242Y (en) * 2009-03-06 2009-12-09 电子科技大学 Millimeter-wave single-chip integrated power amplifier
EP2262107A1 (en) * 2009-06-10 2010-12-15 Alcatel Lucent Inverse class F amplifier and method
CN102111114A (en) * 2010-11-30 2011-06-29 东南大学 Design method for reverse class-F power amplifier based on 3/4 spiral virtual ground structure

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
ANDREI GREBENNIKOV 等: "High-Efficiency Transmission-Line GaN HEMT Inverse Class F Power Amplifier for Active Antenna Arrays", 《MICROWAVE CONFERENCE,2009.APMC 2009.ASIA PACIFIC》 *
郑光明: "射频功率放大器关键技术研究", 《中国博士学位论文全文数据库 信息科技辑》 *

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015085742A1 (en) * 2013-12-13 2015-06-18 中兴通讯股份有限公司 Radio-frequency power amplifier, base station, and impedance adjustment method
CN103618507B (en) * 2013-12-16 2017-01-18 北京美电环宇科技有限公司 Radio frequency power amplifier system and lighting equipment
CN103618507A (en) * 2013-12-16 2014-03-05 北京美电环宇科技有限公司 Radio frequency power amplifier system and lighting equipment
CN104953961B (en) * 2015-06-17 2018-05-25 深圳市华讯方舟微电子科技有限公司 A kind of twin-stage is against D classes power amplification circuit and radio-frequency power amplifier
CN104953961A (en) * 2015-06-17 2015-09-30 深圳市华讯方舟微电子科技有限公司 Double-stage inversing D-class power amplifying circuit and radio frequency power amplifier
CN106301254A (en) * 2016-07-27 2017-01-04 杭州电子科技大学 Harmonic match structure that a kind of high efficiency and broad band is orderly and Harmonic Control Method thereof
CN106301254B (en) * 2016-07-27 2023-06-02 杭州电子科技大学 Efficient wideband ordered harmonic matching structure and harmonic control method thereof
CN107453722A (en) * 2017-06-12 2017-12-08 合肥市汤诚集成电路设计有限公司 Charge pump is adaptively boosted F class power amplifiers
CN107453722B (en) * 2017-06-12 2022-02-08 合肥市汤诚集成电路设计有限公司 Self-adaptive boosting F-type power amplifier of charge pump
WO2019015276A1 (en) * 2017-07-21 2019-01-24 深圳市景程信息科技有限公司 Two-line output matching network for inverse class-f power amplifier
CN109286377A (en) * 2017-07-21 2019-01-29 中兴通讯股份有限公司 The linearization process circuit and method of radiofrequency signal
CN107425814A (en) * 2017-08-07 2017-12-01 杭州电子科技大学 A kind of broadband Doherty power amplifier based on compensation parasitic capacitance
CN109981058A (en) * 2017-12-27 2019-07-05 株式会社村田制作所 Match circuit and power amplification circuit
WO2019153328A1 (en) * 2018-02-12 2019-08-15 华为技术有限公司 Power adjustment method and apparatus
US11075659B2 (en) 2018-02-12 2021-07-27 Huawei Technologies Co., Ltd. Power adjustment method and apparatus
CN111656682B (en) * 2018-02-12 2022-01-14 华为技术有限公司 Method, apparatus, and medium for power adjustment
CN111656682A (en) * 2018-02-12 2020-09-11 华为技术有限公司 Method and device for power adjustment
CN109039369A (en) * 2018-08-16 2018-12-18 Oppo(重庆)智能科技有限公司 Radio circuit and electronic equipment
WO2021212727A1 (en) * 2020-04-23 2021-10-28 广州慧智微电子有限公司 Radio frequency power amplifier capable of performing harmonic suppression

Similar Documents

Publication Publication Date Title
CN103391057A (en) Reverse F-type power amplifier and emitter as well as processing method
CN108768308B (en) Asymmetric Doherty power amplifier based on transistor stacked structure
KR100957895B1 (en) Highly efficient amplifier
CN204304936U (en) A kind of rf power amplifier circuit being applied to ultrashort wave radio set
CN114050792A (en) Novel broadband Doherty radio frequency power amplifier
CN103107778B (en) A kind of Doherty power amplifier and adjustment method thereof reducing third order intermodulation
CN102111113B (en) Cascaded multistage radio frequency power amplifier and front-end transmitter in series
CN109672411A (en) A kind of asymmetric broadband Doherty power amplifier suitable for 5G low-frequency range full frequency band
CN103368504B (en) Reflection-type nonlinear pre-distortion circuit
CN109660212B (en) 3-path Doherty power amplifier adopting reactance compensation to expand bandwidth
CN106374863B (en) A kind of Doherty power amplifier and its implementation improving back-off dynamic range
CN101106358A (en) Linear RF power amplifier circuit and its optimization method
US20140035679A1 (en) Power Amplifier Device and Power Amplifier Circuit Thereof
CN104993796B (en) A kind of Doherty power amplifier
CN111585517A (en) Broadband dual-band 3-path Doherty power amplifier adopting combined output network
CN105450185A (en) Reconfigurable high-efficiency high-linearity broadband power amplifying method and amplifier
WO2024139069A1 (en) Radio frequency transmitting apparatus and implementation method therefor
CN107453714A (en) A kind of Doherty power amplifier based on the matching of double states and double state matching process
CN105897179A (en) Compact wideband Doherty power amplifier and implementation method thereof
CN110011621A (en) It is a kind of to integrate incorgruous and Doherty structure high rollback range radio frequency power amplifier
CN101888214A (en) Cascode power amplifier with improved efficiency and linearity
CN104393843A (en) Doherty power amplifier adopting multistage auxiliary circuit amplifier
CN104917468A (en) Three-path reverse Doherty power amplifier and implementation method
CN108763640A (en) The Doherty power amplifier and its design method that high efficiency height retracts
CN112583357A (en) High-efficiency high-power E-type radio frequency power amplifier

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20131113