CN104377416A - Broadband matching circuit applicable to C-wave-band GaN microwave high power device - Google Patents
Broadband matching circuit applicable to C-wave-band GaN microwave high power device Download PDFInfo
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- CN104377416A CN104377416A CN201410621951.0A CN201410621951A CN104377416A CN 104377416 A CN104377416 A CN 104377416A CN 201410621951 A CN201410621951 A CN 201410621951A CN 104377416 A CN104377416 A CN 104377416A
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Abstract
The invention discloses a broadband matching circuit applicable to a C-wave-band GaN microwave high power device. The matching circuit is characterized by comprising a packaging tube shell, an input end broadband matching circuit body, an output end broadband matching circuit body and a GaN chip; each broadband matching circuit body is divided into two stages, wherein the first stage of each broadband matching circuit body is a T-shaped matching network, and the second stage of each broadband matching circuit body is a four-way power divider network; each power divider achieves the power dividing function and the impedance matching function at the same time; isolation resistors are adopted for the output ends of each power divider. The matching network is a two-stage matching network, and therefore the bandwidth of the device is increased. The inconsistency of the phases of all spun gold bonding points of the output ends of the four-way power dividers is controlled within 5 degrees, and the overall output power and the combination efficiency of the device are guaranteed. A transmission line is wide and free of electromigration and will be reliable for a long time. Besides, the isolation resistors are adopted for the output ports of each power divider, the isolation degree and the return loss of all the ports of the device are increased, and odd mode oscillation of the device is prevented.
Description
Technical field
The present invention relates to a kind of broadband matching circuit being applicable to C wave band GaN microwave high power device, belong to microwave device technology field.
Background technology
The general requirement power output of modern radar system to microwave power device is large, power density is high, wide working band, higher emission effciency, can linear work and low cost and high reliability.Power output reaches the C-band GaN microwave high power device of more than hectowatt grade, generally needs to carry out many born of the same parents synthesis.The input and output impedance of single-chip GaN is all lower, needs to carry out coupling in device, carrys out the input and output impedance of boost device.Due to requirement that is microminiaturized and low cost, device generally adopts general encapsulating package to carry out device package, and the input and output impedance of device all matches 50 ohm.In device, the common matching way of coupling is the T-shaped coupling that first order coupling adopts lumped parameter.The second level adopts the mode of power divider to match 50 ohm.Power divider, except having power division and impedance matching function, also needs to prevent device inside from forming the strange mode oscillation feeding back and cause.
Summary of the invention
For solving the deficiencies in the prior art, the object of the present invention is to provide a kind of broadband matching circuit being applicable to C wave band GaN microwave high power device.
In order to realize above-mentioned target, the present invention adopts following technical scheme:
One is applicable to C wave band GaN microwave high power device broadband matching circuit, it is characterized in that, comprises encapsulating package, input broadband matching circuit, output broadband matching circuit and GaN chip; Described input broadband matching circuit and output broadband matching circuit are divided into two-stage, comprise the T-shaped match circuit of the first order and second level No. four power divider; The T-shaped match circuit of the described first order is composed in series by series inductance and shunt capacitance; Described second level No. four power divider matches 50 ohm; Described second level No. four power divider is divided into two-stage, and the first order exports to two output ports by an input port, and two output ports that the second level is derived by the first order export to two output ports separately again, forms four output ports.
Aforesaid a kind of broadband matching circuit being applicable to C wave band GaN microwave high power device, is characterized in that, the impedance transformation Q value of the T-shaped match circuit of the described first order is provided with the upper limit.
Aforesaid a kind of broadband matching circuit being applicable to C wave band GaN microwave high power device, is characterized in that, the phase control of the output port of described second level No. four power divider is within 5 degree.
Aforesaid a kind of broadband matching circuit being applicable to C wave band GaN microwave high power device, is characterized in that, described second level No. four power divider adopts transmission line to carry out impedance matching.
Aforesaid a kind of broadband matching circuit being applicable to C wave band GaN microwave high power device, is characterized in that, the output port of described second level No. four power divider is provided with isolation resistance.
The beneficial effect that the present invention reaches: the mode that present invention employs two-stage coupling realizes Broadband Matching.The transmission line of power divider is wider, does not have ELECTROMIGRATION PHENOMENON, there will not be long-term reliability problems.The Sensor gain and phase perturbations of each gold wire bonding point of power divider output controls within 5 degree, ensure that power output and the combined coefficient of overall device.Adopt isolation resistance at the output port of power divider, increase isolation and the return loss of each port of device, prevent device from strange mode oscillation occurring.
Accompanying drawing explanation
Fig. 1 is the cross section structure schematic diagram of this device;
Tu2Shi tetra-road power splitter structure schematic diagram.The implication of Reference numeral in figure:
1-encapsulating package, 2-input matching capacitance, 3-GaN chip, 4-output matching capacitance, 5-input pin, 6-output pin, No. four power dividers of 7-input broadband matching circuit, 8. No. four power dividers of output broadband matching circuit, 9-bonding gold wire, 72,73,74-isolation resistance, P1, P2, P3, P4, P5, P6, P7, P8-bonding gold wire point.
Embodiment
Below in conjunction with accompanying drawing, the invention will be further described.Following examples only for technical scheme of the present invention is clearly described, and can not limit the scope of the invention with this.
A kind of broadband matching circuit being applicable to C wave band GaN microwave high power device that the present invention relates to, comprises encapsulating package 1, input broadband matching circuit, output broadband matching circuit and GaN chip 3.
Wherein, as shown in Figure 1, input broadband matching circuit and output broadband matching circuit are divided into two-stage, comprise the T-shaped match circuit of the first order and second level No. four power divider.
The T-shaped match circuit of the first order is composed in series by series inductance and shunt capacitance.Electric capacity is matched 50 ohm by second level No. four power divider.Second level No. four power divider is divided into two-stage, and the first order exports to two output ports by an input port, and two output ports that the second level is derived by the first order export to two output ports separately again, forms four output ports.
This device adopts small-signal simulation, and output adopts isolation resistance, can increase isolation and the return loss of each port of device, prevent device from strange mode oscillation occurring.
Power divider adopts transmission line to carry out impedance matching.Transmission line is wider, does not have ELECTROMIGRATION PHENOMENON, does not also have long-term reliability problems.
The output port of power divider, the phase equalization namely as bonding gold wire point P1, P2, P3, P4, P5, P6, P7, P8 in Fig. 2 controls within 5 degree, to ensure power output and the combined coefficient of overall device.
Because devices function frequency range is wider, the input and output impedance comparison of such as 5.3GHz-5.9GHz, GaN chip 3 is low.The impedance transformation ratio of the T-shaped match circuit of the first order can not be too large, and namely the Q value of the impedance transformation of the T-shaped match circuit of the first order is conditional.The impedance of the T-shaped match circuit of the such as first order transforms to 10 ohm from 1 ohm, and second level No. four power divider transforms to 50 ohm 10 ohm again.
The above is only the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the prerequisite not departing from the technology of the present invention principle; can also make some improvement and distortion, these improve and distortion also should be considered as protection scope of the present invention.
Claims (5)
1. be applicable to a C wave band GaN microwave high power device broadband matching circuit, it is characterized in that, comprise encapsulating package, input broadband matching circuit, output broadband matching circuit and GaN chip; Described input broadband matching circuit and output broadband matching circuit are divided into two-stage, comprise the T-shaped match circuit of the first order and second level No. four power divider; The T-shaped match circuit of the described first order is composed in series by series inductance and shunt capacitance; Described second level No. four power divider matches 50 ohm; Described second level No. four power divider is divided into two-stage, and the first order exports to two output ports by an input port, and two output ports that the second level is derived by the first order export to two output ports separately again, forms four output ports.
2. a kind of broadband matching circuit being applicable to C wave band GaN microwave high power device according to claim 1, is characterized in that, the impedance transformation Q value of the T-shaped match circuit of the described first order is provided with the upper limit.
3. a kind of broadband matching circuit being applicable to C wave band GaN microwave high power device according to claim 1, is characterized in that, the phase control of the output port of described second level No. four power divider is within 5 degree.
4. a kind of broadband matching circuit being applicable to C wave band GaN microwave high power device according to claim 1, is characterized in that, the employing transmission line of described second level No. four power divider carries out impedance matching.
5. a kind of broadband matching circuit being applicable to C wave band GaN microwave high power device according to claim 1, is characterized in that, the output port of described second level No. four power divider is provided with isolation resistance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410621951.0A CN104377416A (en) | 2014-11-07 | 2014-11-07 | Broadband matching circuit applicable to C-wave-band GaN microwave high power device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410621951.0A CN104377416A (en) | 2014-11-07 | 2014-11-07 | Broadband matching circuit applicable to C-wave-band GaN microwave high power device |
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| CN104377416A true CN104377416A (en) | 2015-02-25 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105510697A (en) * | 2016-01-06 | 2016-04-20 | 江苏博普电子科技有限责任公司 | Real time current monitoring circuit of GaN microwave power device direct current aging system |
| CN106656101A (en) * | 2017-02-08 | 2017-05-10 | 江苏博普电子科技有限责任公司 | Anti-oscillation broadband matching circuit of high power microwave device synthesized by multiple GaN chips |
| CN109546990A (en) * | 2018-12-12 | 2019-03-29 | 江苏博普电子科技有限责任公司 | A kind of broadband matching circuit suitable for high-frequency power device |
| CN110995167A (en) * | 2019-11-19 | 2020-04-10 | 中国电子科技集团公司第五十五研究所 | Internal matching power tube applying optimized synthesis network |
| CN113595516A (en) * | 2021-07-14 | 2021-11-02 | 南京三乐集团有限公司 | High-miniaturization L-band 900W GaN power amplification module |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105510697A (en) * | 2016-01-06 | 2016-04-20 | 江苏博普电子科技有限责任公司 | Real time current monitoring circuit of GaN microwave power device direct current aging system |
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| CN106656101A (en) * | 2017-02-08 | 2017-05-10 | 江苏博普电子科技有限责任公司 | Anti-oscillation broadband matching circuit of high power microwave device synthesized by multiple GaN chips |
| CN109546990A (en) * | 2018-12-12 | 2019-03-29 | 江苏博普电子科技有限责任公司 | A kind of broadband matching circuit suitable for high-frequency power device |
| CN110995167A (en) * | 2019-11-19 | 2020-04-10 | 中国电子科技集团公司第五十五研究所 | Internal matching power tube applying optimized synthesis network |
| CN110995167B (en) * | 2019-11-19 | 2022-08-16 | 中国电子科技集团公司第五十五研究所 | Internal matching power tube applying optimized synthesis network |
| CN113595516A (en) * | 2021-07-14 | 2021-11-02 | 南京三乐集团有限公司 | High-miniaturization L-band 900W GaN power amplification module |
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Application publication date: 20150225 |
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