CN204046561U - High-isolation single-pole double-throw switch (SPDT) - Google Patents
High-isolation single-pole double-throw switch (SPDT) Download PDFInfo
- Publication number
- CN204046561U CN204046561U CN201420150042.9U CN201420150042U CN204046561U CN 204046561 U CN204046561 U CN 204046561U CN 201420150042 U CN201420150042 U CN 201420150042U CN 204046561 U CN204046561 U CN 204046561U
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- China
- Prior art keywords
- branch road
- electric capacity
- diode
- spdt
- throw switch
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- Expired - Lifetime
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- 238000002955 isolation Methods 0.000 title claims abstract description 15
- 230000001629 suppression Effects 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
Abstract
The utility model discloses high-isolation single-pole double-throw switch (SPDT), comprise and to be connected the first branch road formed, two the first circuit and electric capacity C3 by inductance L 2 and resistance R2; Described first branch road is connected with the circuit formed after two the first circuit in parallel with after electric capacity C3 parallel connection; The second branch road that described first circuit comprises electric capacity C1, diode V3, formed by inductance L 1 and electric capacity C2 ground connection, the 3rd branch road formed by resistance R1 and diode V1 and the 4th branch road formed by diode V2 ground connection; Described electric capacity C1, the 3rd branch road are connected successively with diode V3; At least two-stage the 4th branch road is in series with between described 3rd branch road and diode V3; The second branch road together with two-stage series connection is connected with between described electric capacity C1 with the 3rd branch road.Single-pole double-throw switch (SPDT) realizes the suppression of radio frequency signal by the second branch road that the two-stage increased is formed by inductance L 1 and electric capacity C2 ground connection, finally to solve the problem that switching circuit produces resonance.
Description
Technical field
The utility model relates to switching technique field, is specifically related to high-isolation single-pole double-throw switch (SPDT).
Background technology
At present, the insulated degree requirement of single-pole double-throw switch (SPDT) reaches 110dB, and it is quite difficult for reaching this index, in order to complete the production of this product, has selected the basic circuit of connection in series-parallel form when assembled product; In order to improve isolation, part producer is altogether in parallel 6 PIN tube cores, just can meet the demands so in theory, but in the production of reality, due to the parasitic parameter of diode core itself, the stray inductance of die bond bonding gold wire used, all can make circuit produce resonance and cause working curve to fluctuate comparatively greatly, thus cannot meet the requirement of technical indicator.
Utility model content
For above-mentioned deficiency of the prior art, the high-isolation single-pole double-throw switch (SPDT) that the utility model provides solves the problem that circuit produces resonance.
In order to reach foregoing invention object, the technical solution adopted in the utility model is: provide a kind of high-isolation single-pole double-throw switch (SPDT), and it comprises to be connected the first branch road formed, two the first circuit and electric capacity C3 by inductance L 2 and resistance R2; Described first branch road is connected with the circuit formed after two the first circuit in parallel with after electric capacity C3 parallel connection;
The second branch road that described first circuit comprises electric capacity C1, diode V3, formed by inductance L 1 and electric capacity C2 ground connection, the 3rd branch road formed by resistance R1 and diode V1 and the 4th branch road formed by diode V2 ground connection;
Described electric capacity C1, the 3rd branch road are connected successively with diode V3; At least two-stage the 4th branch road is in series with between described 3rd branch road and diode V3; The second branch road together with two-stage series connection is connected with between described electric capacity C1 with the 3rd branch road.
During design, the spacing preferably between adjacent two the 4th branch roads equals the quarter-wave of single-pole double-throw switch (SPDT) operating frequency.
During design, be preferably in series with six grade of the 4th branch road between described 3rd branch road and diode V3 further.
During design, then the operating frequency of further described single-pole double-throw switch (SPDT) is 5GHz ~ 6 GHz.
The beneficial effects of the utility model are: single-pole double-throw switch (SPDT) realizes the suppression of radio frequency signal by the second branch road that the two-stage increased is formed by inductance L 1 and electric capacity C2 ground connection, finally to solve the problem that switching circuit produces resonance.
Accompanying drawing explanation
Fig. 1 is the circuit diagram of the utility model high-isolation single-pole double-throw switch (SPDT) embodiment.
Embodiment
Below in conjunction with accompanying drawing, embodiment of the present utility model is described in detail:
With reference to the circuit diagram that figure 1, Fig. 1 is the utility model high-isolation single-pole double-throw switch (SPDT) embodiment; As described in Figure 1, the technical scheme of the present embodiment is: comprise and to be connected the first branch road formed, two the first circuit and electric capacity C3 by inductance L 2 and resistance R2; Described first branch road is connected with the circuit formed after two the first circuit in parallel with after electric capacity C3 parallel connection;
The second branch road that described first circuit comprises electric capacity C1, diode V3, formed by inductance L 1 and electric capacity C2 ground connection, the 3rd branch road formed by resistance R1 and diode V1 and the 4th branch road formed by diode V2 ground connection;
Described electric capacity C1, the 3rd branch road are connected successively with diode V3; At least two-stage the 4th branch road is in series with between described 3rd branch road and diode V3; The second branch road together with two-stage series connection is connected with between described electric capacity C1 with the 3rd branch road.
The double-pole double throw switch of the present embodiment realizes the suppression of radio frequency signal by the second branch road that the two-stage increased is formed by inductance L 1 and electric capacity C2 ground connection, finally to solve the problem that switching circuit produces resonance.
In an embodiment of the present utility model, the path of microwave circuit is elongated as best one can, there are enough paths, the spacing of adjacent two the 4th branch roads just can as much as possible close to λ/4 of operating frequency, the reason done like this to be between two the 4th branch roads in parallel on microstrip transmission line, when about quarter-wave, can obtain larger isolation.
In an embodiment of the present utility model, in order to optimize the isolation of single-pole double-throw switch (SPDT) further, between described 3rd branch road and diode V3, be in series with six grade of the 4th branch road.
In an embodiment of the present utility model, have best operating state in order to ensure single-pole double-throw switch (SPDT), its operating frequency is set to 5GHz ~ 6 GHz.
Although describe in detail embodiment of the present utility model by reference to the accompanying drawings, should not be construed as the restriction of the protection range to this patent.In the scope described by claims, the various amendment that those skilled in the art can make without creative work and distortion still belong to the protection range of this patent.
Claims (4)
1. a high-isolation single-pole double-throw switch (SPDT), is characterized in that: comprise and to be connected the first branch road formed, two the first circuit and electric capacity C3 by inductance L 2 and resistance R2; Described first branch road is connected with the circuit formed after two the first circuit in parallel with after electric capacity C3 parallel connection;
The second branch road that described first circuit comprises electric capacity C1, diode V3, formed by inductance L 1 and electric capacity C2 ground connection, the 3rd branch road formed by resistance R1 and diode V1 and the 4th branch road formed by diode V2 ground connection;
Described electric capacity C1, the 3rd branch road are connected successively with diode V3; At least two-stage the 4th branch road is in series with between described 3rd branch road and diode V3; The second branch road together with two-stage series connection is connected with between described electric capacity C1 with the 3rd branch road.
2. high-isolation single-pole double-throw switch (SPDT) according to claim 1, is characterized in that: the spacing between adjacent two the 4th branch roads equals the quarter-wave of single-pole double-throw switch (SPDT) operating frequency.
3. high-isolation single-pole double-throw switch (SPDT) according to claim 2, is characterized in that: be in series with six grade of the 4th branch road between described 3rd branch road and diode V3.
4., according to the arbitrary described high-isolation single-pole double-throw switch (SPDT) of claim 1-3, it is characterized in that: the operating frequency of described single-pole double-throw switch (SPDT) is 5GHz ~ 6 GHz.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420150042.9U CN204046561U (en) | 2014-03-31 | 2014-03-31 | High-isolation single-pole double-throw switch (SPDT) |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420150042.9U CN204046561U (en) | 2014-03-31 | 2014-03-31 | High-isolation single-pole double-throw switch (SPDT) |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204046561U true CN204046561U (en) | 2014-12-24 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420150042.9U Expired - Lifetime CN204046561U (en) | 2014-03-31 | 2014-03-31 | High-isolation single-pole double-throw switch (SPDT) |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204046561U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107408942A (en) * | 2015-01-30 | 2017-11-28 | 派瑞格恩半导体有限公司 | RF switch circuit with distributed switch |
| CN109106398A (en) * | 2018-08-21 | 2019-01-01 | 青岛海信医疗设备股份有限公司 | A kind of control method popped one's head in and pop one's head in |
| CN113037263A (en) * | 2021-03-16 | 2021-06-25 | 西安博瑞集信电子科技有限公司 | Single-chip positive-voltage controlled low-insertion-loss high-isolation single-pole double-throw switch chip |
| CN113839659A (en) * | 2021-08-11 | 2021-12-24 | 中国电子科技集团公司第二十九研究所 | High-isolation single-pole double-throw switch circuit |
-
2014
- 2014-03-31 CN CN201420150042.9U patent/CN204046561U/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107408942A (en) * | 2015-01-30 | 2017-11-28 | 派瑞格恩半导体有限公司 | RF switch circuit with distributed switch |
| CN107408942B (en) * | 2015-01-30 | 2020-11-03 | 派赛公司 | Radio frequency switching circuit with distributed switches |
| CN109106398A (en) * | 2018-08-21 | 2019-01-01 | 青岛海信医疗设备股份有限公司 | A kind of control method popped one's head in and pop one's head in |
| CN113037263A (en) * | 2021-03-16 | 2021-06-25 | 西安博瑞集信电子科技有限公司 | Single-chip positive-voltage controlled low-insertion-loss high-isolation single-pole double-throw switch chip |
| CN113839659A (en) * | 2021-08-11 | 2021-12-24 | 中国电子科技集团公司第二十九研究所 | High-isolation single-pole double-throw switch circuit |
| CN113839659B (en) * | 2021-08-11 | 2023-08-08 | 中国电子科技集团公司第二十九研究所 | High-isolation single-pole double-throw switch circuit |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20141224 |
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| CX01 | Expiry of patent term |