CN204230399U - A kind of broadband matching circuit being applicable to C-band GaN microwave high power device - Google Patents
A kind of broadband matching circuit being applicable to C-band GaN microwave high power device Download PDFInfo
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- CN204230399U CN204230399U CN201420661451.5U CN201420661451U CN204230399U CN 204230399 U CN204230399 U CN 204230399U CN 201420661451 U CN201420661451 U CN 201420661451U CN 204230399 U CN204230399 U CN 204230399U
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Abstract
The utility model discloses a kind of broadband matching circuit being applicable to C wave band GaN microwave high power device, it is characterized in that, comprise encapsulating package, input broadband matching circuit, output broadband matching circuit and GaN chip; Described broadband matching circuit is divided into two-stage, and the first order is T-shaped matching network, and the second level is four tunnel power divider network; Described power divider completes power division and impedance matching function simultaneously; Described power divider output adopts isolation resistance.The utility model matching network adopts second degree matches network, adds the bandwidth of device.The Sensor gain and phase perturbations of each gold wire bonding point of No. four power divider output controls within 5 degree, ensure that power output and the combined coefficient of overall device.Transmission line is wider, does not have ELECTROMIGRATION PHENOMENON, there will not be long-term reliability problems.In addition, adopt isolation resistance at the output port of power divider, increase isolation and the return loss of each port of device, prevent device from strange mode oscillation occurring.
Description
Technical field
The utility model relates to a kind of broadband matching circuit being applicable to C-band GaN microwave high power device, belongs to microwave device technology field.
Background technology
The general requirement power output of modern radar system to microwave power device is large, power density is high, wide working band, higher emission effciency, can linear work and low cost and high reliability.Power output reaches the C-band GaN microwave high power device of more than hectowatt grade, generally needs to carry out many born of the same parents synthesis.The input and output impedance of single-chip GaN is all lower, needs to carry out coupling in device, carrys out the input and output impedance of boost device.Due to requirement that is microminiaturized and low cost, device generally adopts general encapsulating package to carry out device package, and the input and output impedance of device all matches 50 ohm.In device, the common matching way of coupling is the T-shaped coupling that first order coupling adopts lumped parameter.The second level adopts the mode of power divider to match 50 ohm.Power divider, except having power division and impedance matching function, also needs to prevent device inside from forming the strange mode oscillation feeding back and cause.
Utility model content
For solving the deficiencies in the prior art, the purpose of this utility model is to provide a kind of broadband matching circuit being applicable to C-band GaN microwave high power device.
In order to realize above-mentioned target, the utility model adopts following technical scheme:
One is applicable to C wave band GaN microwave high power device broadband matching circuit, it is characterized in that, comprises encapsulating package, input broadband matching circuit, output broadband matching circuit and GaN chip; Described input broadband matching circuit and output broadband matching circuit are divided into two-stage, comprise the T-shaped match circuit of the first order and second level No. four power divider; The T-shaped match circuit of the described first order is composed in series by series inductance and shunt capacitance; Described second level No. four power divider matches 50 ohm; Described second level No. four power divider is divided into two-stage, and the first order exports to two output ports by an input port, and two output ports that the second level is derived by the first order export to two output ports separately again, forms four output ports.
Aforesaid a kind of broadband matching circuit being applicable to C-band GaN microwave high power device, is characterized in that, the impedance transformation Q value of the T-shaped match circuit of the described first order is provided with the upper limit.
Aforesaid a kind of broadband matching circuit being applicable to C-band GaN microwave high power device, is characterized in that, the phase control of the output port of described second level No. four power divider is within 5 degree.
Aforesaid a kind of broadband matching circuit being applicable to C-band GaN microwave high power device, is characterized in that, described second level No. four power divider adopts transmission line to carry out impedance matching.
Aforesaid a kind of broadband matching circuit being applicable to C-band GaN microwave high power device, is characterized in that, the output port of described second level No. four power divider is provided with isolation resistance.
The beneficial effect that the utility model reaches: the mode that the utility model have employed two-stage coupling realizes Broadband Matching.The transmission line of power divider is wider, does not have ELECTROMIGRATION PHENOMENON, there will not be long-term reliability problems.The Sensor gain and phase perturbations of each gold wire bonding point of power divider output controls within 5 degree, ensure that power output and the combined coefficient of overall device.Adopt isolation resistance at the output port of power divider, increase isolation and the return loss of each port of device, prevent device from strange mode oscillation occurring.
Accompanying drawing explanation
Fig. 1 is the cross section structure schematic diagram of this device;
Tu2Shi tetra-road power splitter structure schematic diagram.The implication of Reference numeral in figure:
1-encapsulating package, 2-input matching capacitance, 3-GaN chip, 4-output matching capacitance, 5-input pin, 6-output pin, No. four power dividers of 7-input broadband matching circuit, 8. No. four power dividers of output broadband matching circuit, 9-bonding gold wire, 72,73,74-isolation resistance, P1, P2, P3, P4, P5, P6, P7, P8-bonding gold wire point.
Embodiment
Below in conjunction with accompanying drawing, the utility model is further described.Following examples only for clearly the technical solution of the utility model being described, and can not limit protection range of the present utility model with this.
A kind of broadband matching circuit being applicable to C wave band GaN microwave high power device that the utility model relates to, comprises encapsulating package 1, input broadband matching circuit, output broadband matching circuit and GaN chip 3.
Wherein, as shown in Figure 1, input broadband matching circuit and output broadband matching circuit are divided into two-stage, comprise the T-shaped match circuit of the first order and second level No. four power divider.
The T-shaped match circuit of the first order is composed in series by series inductance and shunt capacitance.Electric capacity is matched 50 ohm by second level No. four power divider.Second level No. four power divider is divided into two-stage, and the first order exports to two output ports by an input port, and two output ports that the second level is derived by the first order export to two output ports separately again, forms four output ports.
This device adopts small-signal simulation, and output adopts isolation resistance, can increase isolation and the return loss of each port of device, prevent device from strange mode oscillation occurring.
Power divider adopts transmission line to carry out impedance matching.Transmission line is wider, does not have ELECTROMIGRATION PHENOMENON, does not also have long-term reliability problems.
The output port of power divider, the phase equalization namely as bonding gold wire point P1, P2, P3, P4, P5, P6, P7, P8 in Fig. 2 controls within 5 degree, to ensure power output and the combined coefficient of overall device.
Because devices function frequency range is wider, the input and output impedance comparison of such as 5.3GHz-5.9GHz, GaN chip 3 is low.The impedance transformation ratio of the T-shaped match circuit of the first order can not be too large, and namely the Q value of the impedance transformation of the T-shaped match circuit of the first order is conditional.The impedance of the T-shaped match circuit of the such as first order transforms to 10 ohm from 1 ohm, and second level No. four power divider transforms to 50 ohm 10 ohm again.
The above is only preferred implementation of the present utility model; should be understood that; for those skilled in the art; under the prerequisite not departing from the utility model know-why; can also make some improvement and distortion, these improve and distortion also should be considered as protection range of the present utility model.
Claims (5)
1. be applicable to a broadband matching circuit for C wave band GaN microwave high power device, it is characterized in that, comprise encapsulating package, input broadband matching circuit, output broadband matching circuit and GaN chip; Described input broadband matching circuit and output broadband matching circuit are divided into two-stage, comprise the T-shaped match circuit of the first order and second level No. four power divider; The T-shaped match circuit of the described first order is composed in series by series inductance and shunt capacitance; Described second level No. four power divider matches 50 ohm; Described second level No. four power divider is divided into two-stage, and the first order exports to two output ports by an input port, and two output ports that the second level is derived by the first order export to two output ports separately again, forms four output ports.
2. a kind of broadband matching circuit being applicable to C wave band GaN microwave high power device according to claim 1, is characterized in that, the impedance transformation Q value of the T-shaped match circuit of the described first order is provided with the upper limit.
3. a kind of broadband matching circuit being applicable to C wave band GaN microwave high power device according to claim 1, is characterized in that, the phase control of the output port of described second level No. four power divider is within 5 degree.
4. a kind of broadband matching circuit being applicable to C wave band GaN microwave high power device according to claim 1, is characterized in that, the employing transmission line of described second level No. four power divider carries out impedance matching.
5. a kind of broadband matching circuit being applicable to C wave band GaN microwave high power device according to claim 1, is characterized in that, the output port of described second level No. four power divider is provided with isolation resistance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420661451.5U CN204230399U (en) | 2014-11-07 | 2014-11-07 | A kind of broadband matching circuit being applicable to C-band GaN microwave high power device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420661451.5U CN204230399U (en) | 2014-11-07 | 2014-11-07 | A kind of broadband matching circuit being applicable to C-band GaN microwave high power device |
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| Publication Number | Publication Date |
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| CN204230399U true CN204230399U (en) | 2015-03-25 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420661451.5U Expired - Fee Related CN204230399U (en) | 2014-11-07 | 2014-11-07 | A kind of broadband matching circuit being applicable to C-band GaN microwave high power device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104377416A (en) * | 2014-11-07 | 2015-02-25 | 江苏博普电子科技有限责任公司 | Broadband matching circuit applicable to C-wave-band GaN microwave high power device |
| CN107577860A (en) * | 2017-08-29 | 2018-01-12 | 西安电子科技大学 | Microwave device road coupled transfer performance prediction method based on single gold wire bonding |
-
2014
- 2014-11-07 CN CN201420661451.5U patent/CN204230399U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104377416A (en) * | 2014-11-07 | 2015-02-25 | 江苏博普电子科技有限责任公司 | Broadband matching circuit applicable to C-wave-band GaN microwave high power device |
| CN107577860A (en) * | 2017-08-29 | 2018-01-12 | 西安电子科技大学 | Microwave device road coupled transfer performance prediction method based on single gold wire bonding |
| CN107577860B (en) * | 2017-08-29 | 2019-09-10 | 西安电子科技大学 | Microwave device road coupled transfer performance prediction method based on single gold wire bonding |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150325 Termination date: 20211107 |