CN206490069U - A kind of wide band gap semiconductor device - Google Patents
A kind of wide band gap semiconductor device Download PDFInfo
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- CN206490069U CN206490069U CN201720101294.6U CN201720101294U CN206490069U CN 206490069 U CN206490069 U CN 206490069U CN 201720101294 U CN201720101294 U CN 201720101294U CN 206490069 U CN206490069 U CN 206490069U
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Abstract
A kind of wide band gap semiconductor device of the present utility model, including the transitional region between terminal structure area, active area and the active area and the terminal structure area, the active area includes first area and second area, the first area is close and/or positioned at the device surrounding, the second area is close and/or positioned at the device center, the first area and the second area are directly electrically connected, and/or are electrically connected respectively with other regions of the device；Schottky contact region and the ratio γ of p-type doping sector width in the unit area of the first areaFirst areaThan the ratio γ of the second areaSecond areaGreatly.To outside inside device active region of the present utility model, the ratio for making Schottky contact region and p-type doping sector width in unit area is in incrementally increase trend, the uneven degree of device temperature in uniform γ designs is advantageously reduced, so as to improve current capacity actual during proper device operation.
Description
Technical field
The utility model is related to a kind of wide band gap semiconductor device, more particularly to a kind of reduction device work when temperature not
The device of uniformity coefficient.
Background technology
The technology that each major company uses at present is JBS (junction barrier schottkky) Junction Barrier Schottky
Reverse leakage current is caused to increased dramatically due to being influenceed by electric field to solve Schottky with MPS (merged PiN schottky)
The problem of.The main p-type doped region formation PN junction using plane in JBS and MPS structures, will when device bears reversely pressure-resistant
Point of maximum electric field is shifted, and makes it away from Schottky contacts, so as to reach the influence of shielding Electric Field on Surface Schottky, reduces device
Reverse leakage current.Compared with JBS structure, MPS structures are more excellent, and current major silicon carbide diode companies progressively use MPS
Structure carrys out instead preceding JBS structure.For MPS structures, the positive contact of its structure is mixed by schottky junction part and p-type
Miscellaneous area is collectively constituted.And be that Schottky contact region is identical with the width ratio of p-type doped region using even structure in prior art
It is designed, this can make device inside and outside produce identical heat.Heat in the middle of device is only shed by heat sink, the heat of surrounding
Both by heat sink, carry out heat radiation also by device edge surface and shed.So result in device middle portion temperature high, ambient temperature
Low situation.Non-uniform temperature causes device carriers mobility uneven, reduces the actual current capacity of device.
Particularly in the device of high current specification, because device size is big, temperature caused by the heat radiation of device edge is uneven brighter
It is aobvious.
Device at lower voltages, is opened by Schottky and bears forward current.Electric current increases, and forward voltage drop increases to PN junction and opened
When opening magnitude of voltage, PN junction part is just turned on.During generation current surge, electric current is undertaken by the unlatching of PN junction part.Normally make
Used time, is to undertake electric current by schottky portion.Therefore, in order to further reduce forward voltage drop during diode current flow, need
Improve the schottky portion in device.And in order to improve the surge capacity of device, it is necessary to improve the PN junction area in device, that is, carry
The p-type doped region area of its high composition.It is nonconducting and p-type doped region is in normal operation, that is, under low-voltage, is device
One of temperature influence factor during part normal work.So when improving the surge capacity of device, how to set p-type doped region
Position simultaneously reduce device work when non-uniform temperature degree be exactly one need solution the problem of.
The content of the invention
In order to solve the above technical problems, the utility model proposes a kind of wide band gap semiconductor device, advantageously reducing device
The degree of part non-uniform temperature.
Therefore, the utility model is adopted the following technical scheme that：
A kind of wide band gap semiconductor device, including terminal structure area, active area and the active area and the terminal knot
Transitional region between structure area, the active area includes first area and second area, and the first area is close and/or is located at
The device surrounding, the second area is close and/or positioned at the device center, the first area and the second area
Directly electrically connect, and/or electrically connect respectively with other regions of the device；Schottky in the unit area of the first area
The ratio γ of contact zone and p-type doping sector widthFirst areaThan Schottky contact region and p-type in the unit area of the second area
The ratio γ of doping sector widthSecond areaGreatly, for making the device inside to outside current capacity become in gradually increase
Gesture, so that the device exterior produces more heat than the device inside.
Further, the first area is additionally provided with the 3rd subregion, and the first area is included close to described accordingly
First subregion of the 3rd subregion and the second subregion away from the 3rd subregion, the 3rd subregion Central Symmetry
The device both sides are distributed in, the 3rd subregion is all made up of p-type doped region, the ratio of first subregion
γFirst subregionIt is maximum.
Further, the second area is included positioned at the 4th subregion of the device center and in the device
5th subregion of the heart, the ratio γ of the 4th subregion4th subregionLess than the ratio γ of the 5th subregion5th subregion, and
And γ4th subregionAnd γ5th subregionThe ratio γ of respectively less than outside surrounding.
Further, the ratio γ of second subregionSecond subregionWith the ratio γ of the 5th subregion5th subregion
γ value size sequences of the ratio γ in each region of the device in each region of the device is placed in the middle, for existing in the devices
The region for not having large area p-type doped region still meets internal to requirement of the outside current capacity in gradually increase tendency.
Further, the ratio γ of the 5th subregion5th subregionLess than the ratio γ of second subregionSecond subregion。
Further, the Schottky of first subregion, the second subregion, the 4th subregion and the 5th subregion is constituted
Contact zone can include bar shaped, rectangle, hexagon and circle etc. using one of following shape；Constitute first subregion, second
The p-type doped region of subregion, the 4th subregion and the 5th subregion can include bar shaped, rectangle, six sides using one of following shape
Shape and circle etc.；3rd subregion can include bar shaped, rectangle, hexagon and circle etc. using one of following shape.
Further, the structure of first subregion is the alternately regularly arranged Schottky contact region of strip first and the
One p-type doped region；The structure of second subregion is the alternately regularly arranged Schottky contact region of strip first and the second p-type
Doped region, first Schottky contact region width in device plane X-direction is all identical, and second subregion is distributed in
The both sides of device center, overall up and down is in concave shape respectively；3rd subregion is six area identical rectangular areas.
Further, the structure of the 4th subregion for large area the 3rd p-type doped region and wherein regular distribution
Second Schottky contact region, the entirety of the 4th subregion has a rectangular shape；The structure of 5th subregion is alternately rule
The 3rd Schottky contact region then arranged and the second p-type doped region, the 3rd Schottky contact region and second Schottky
The basic cell structure shape of contact zone is identical, area is same or similar, and the entirety of the 5th subregion is in hollow four sides
Convex shape, second, third described Schottky contact region and first Schottky contact region are wide in device plane X-direction
Degree is all identical, and the second p-type doped region in second subregion and the 5th subregion is in device plane X-direction
Upper width is all identical.
Further, the basic cell structure of second, third Schottky contact region is square, W2For the described 3rd
The p-type doping sector width of subregion, WAFor the width of the 3rd p-type doped region in the 4th subregion, WBFor second sub-district
The width of second p-type doped region, W in domain and the 5th subregionCFor the width of the first p-type doped region in first subregion
Each several part p-type doped region in degree, the device is using identical doping type and with W2>WA>WB>WC。
Further, W2、WA、WB、WCEach numerical approach on dimension be designed selection according to following rules：
WA=N*W1+(N+1)*WB,
Wherein, N is integer；W1Known numeric value during for design；But final WAValue should be less than the 5th subregion
The half of width；
W2=N*W1+(N-1)*WC,
And meet
Wherein, N is integer；WCKnown numeric value during for design；ρ is N-epi sheet resistance rate, and Δ V is in carborundum
The self-built potential of PN junction, J is required current densities when the device PN junction is opened；
WB=λ * WC,
And meet S1*γSecond subregion=(S2-3*S3)*γFirst subregion
Wherein, λ spans are 1.5 to 2.5；S1For the area of the second subregion, γSecond subregionFor the second subregion unit
Schottky contact region and the ratio of p-type doping sector width, S in area2For the area of the first subregion, S3For the 3rd subregion
Area, γFirst subregionFor Schottky contact region in the first subregion unit area and the ratio of p-type doping sector width.
The beneficial effects of the utility model are：Employed in device design inside device active region to outside, unit plane
The ratio of Schottky contact region and p-type doping sector width is in the design method for the trend that incrementally increases in product, makes silicon carbide schottky
Diode component is in forward conduction, and current density is small in the middle part of device, and surrounding current density is big, advantageously reduces and is set in uniform γ
The uneven degree of device temperature in meter, so as to improve current capacity actual during proper device operation.
Some preferred embodiments of the present utility model also have following beneficial effect：Individually designed 3rd son in the devices
Region is all made up of p-type doped region, therefore in order to ensure inside device active region to outside, Schottky contacts in unit area
The ratio of area and p-type doping sector width is in incrementally increase trend, it is necessary in the p-type doped region periphery γ values containing larger area most
Greatly.In the region without large area p-type doped region, design is laid out using value γ values placed in the middle.So design
PN junction area can be increased, the PN diode ratios of device are improved, make device have high current by when, have more many areas
PN junction, which is opened, to be come by electric current, improves device surge current ability, while still meeting device inside to outside electric current
Ducting capacity is in the requirement of gradually increase tendency, it is ensured that device temperature is uniform.
Brief description of the drawings
Fig. 1 is the basic cell structure figure of wide band gap semiconductor device section in the prior art；
Fig. 2 is a kind of horizontal plane structure chart for wide band gap semiconductor device that the utility model embodiment one is provided；
Fig. 3 is a kind of horizontal surface areas figure for wide band gap semiconductor device that the utility model embodiment one is provided；
Fig. 4 is a kind of structure of the wide band gap semiconductor device of the offer of the utility model embodiment one along A-A ' directional profiles
Figure；
Fig. 5 is a kind of structure of the wide band gap semiconductor device of the offer of the utility model embodiment one along B-B ' directional profiles
Figure.
Fig. 6 is the horizontal surface areas figure for the first wide band gap semiconductor device that the utility model embodiment two is provided；
Fig. 7 is the horizontal surface areas figure for second of wide band gap semiconductor device that the utility model embodiment two is provided；
Fig. 8 is the horizontal surface areas figure for the third wide band gap semiconductor device that the utility model embodiment two is provided.
Embodiment
Fig. 1 shows the basic cell structure of device cross-section in the prior art, and wherein N-epi and N-sub are that have the
The region of one type doping type；301 be p-type doped region, is the region with Second-Type doping type；101 be Schottky contacts
Area；401 and 501 be contact electrode.
The operation principle of prior art is：When applying forward voltage between electrode 401 and electrode 501, when forward voltage increases
When arriving about 0.8V greatly, the Schottky diode formed by Schottky contact region 101 is opened, and begins to turn on electric current, electric current by
Electrode 401 is flowed into, and by Schottky contact region 101, by N-epi areas and N-sub areas, is flowed out by electrode 501, now electrode
Electric current between 401 and 501 is turned on by Schottky contact region 101.As forward voltage drop increases, when p-type doped region 301
When PN junction voltage difference between N-epi reaches about 3V, the PN conductings between p-type doped region 301 and N-epi, now by electrode
401, p-type doped region 301, N-epi, N-sub and electrode 501 formation PN diodes with by electrode 401, Schottky contact region
101, N-epi, N-sub and the common conducting electric current of Schottky diode of the formation of electrode 501.
As shown in figure 1, the ratio row of the width of Schottky contact region 101 and the width of p-type doped region 301 in definition unit structure
For：
γ=Wn/Wp
When γ is smaller, in equal area, the schottky area of device reduces, under proper device operation, current capacity
Decline；Corresponding PN junction area increases, and is conducive to device when occurring current surge, has more PN diode sections to undertake
Surge current.γ is got over hour, and the surge current ability of device increases.When γ is bigger, schottky area increase will be favourable
In increase device current capacity in normal working conditions.
With reference to embodiment and compare accompanying drawing the utility model is described in further detail, it should be emphasised that
It is, what the description below was merely exemplary, rather than in order to limit scope of the present utility model and its application.
Embodiment one
It is a kind of wide band gap semiconductor device that the utility model preferred embodiment is provided, terminal knot as shown in Figures 2 and 3
Structure area 4 can be any one terminal structure for meeting the pressure-resistant demand of device, such as multiple field limiting rings, field limiting ring extra show plate, or horizontal
To the structure of varying doping, the structure of knot terminal extension.Region 5 is between device inside active area and outer terminal structure area 4
Transitional region, is made up of p-type doped region.The active of the device inside divides into first area and second area, and first area can
Think region 10 and/or region 20, second area can be region 40 and/or region 30.In the present embodiment, in order that described
More detailed draw, in gradually increase tendency, has been done in first area and second area by device inside to outside current capacity
Point, therefore first area includes region 10 and region 20, second area includes region 40 and region 30, first area and the secondth area
Domain is directly electrically connected.Wherein, first area is also individually provided with the 3rd subregion 50, accordingly, and first area is included close to the 3rd
First subregion 10 of subregion 50 and the second subregion 20 away from the 3rd subregion 50；Second area includes being located in device
4th subregion 40 of the heart and the 5th subregion 30 close to device center.
The structure (without the area shown in region 50) of first subregion 10 is the alternately regularly arranged Xiao Te of strip first
Base contact zone 1A and the first p-type doped region 3C；The structure of second subregion 20 is the alternately regularly arranged Schottky of strip first
Contact zone 1A and the second p-type doped region 3B, and the second subregion 20 is distributed in the both sides of device center, it is overall up and down to be in respectively
Concave shape；The structure of 4th subregion 40 for large area the 3rd p-type doped region 3A and the wherein square second of regular distribution
Schottky contact region 1C, the entirety of the 4th subregion 40 has a rectangular shape；The structure of 5th subregion 30 is alternately regularly arranged
The 3rd Schottky contact region 1B and the second p-type doped region 3B, overall the 5th subregion 30 is in hollow four sides convex shape.Its
In, the 3rd Schottky contact region 1B and the second Schottky contact region 1C basic cell structure shape and area are all identical, and first
Schottky contact region 1A, the second Schottky contact region 1C and the 3rd Schottky contact region the 1B width in device plane X-direction
It is identical, directly contacted with n-type doping area in device profile, the second p-type in the second subregion 20 and the 5th subregion 30 is mixed
Miscellaneous area 3B width in device plane X-direction is identical.3rd subregion 50 is six area identical rectangular areas, and center
Device both sides are symmetrically distributed in, the 3rd subregion is all made up of p-type doped region；Reference 2,3A, 3B, 3C are P in Fig. 2
Type doped region, above-mentioned 4 p-type doped regions by Ohmic electrode using identical doping type and drawing, but width not phases
Together.And the width of Schottky contact region 1A, 1B, 1C between p-type doped region are all identical, the table of reference 1 is used in Fig. 4, Fig. 5
Show.
It is respectively along A-A ' directions, the structure chart of B-B ' directional profiles, wherein each peak width W as shown in Figure 4, Figure 52、
WA、WB、WCP-type doped region in the 3rd subregion 50, the 4th subregion 40, the 5th subregion 30, the first subregion 10 is corresponded to respectively
Width.W2、WA、WB、WCEach numerical approach on dimension be designed selection according to following rules：
WA=N*W1+(N+1)*WB,
Wherein, N is integer；W1Known numeric value during for design；But final WAValue should be less than the 5th subregion
The half of width；
W2=N*W1+(N-1)*WC,
And meet
Wherein, N is integer；WCKnown numeric value during for design；ρ is N-epi sheet resistance rate, and Δ V is in carborundum
The self-built potential of PN junction, J is required current densities when the device PN junction is opened；
WB=λ * WC,
And meet S1*γSecond subregion=(S2-3*S3)*γFirst subregion
Wherein, λ spans are 1.5 to 2.5；S1For the area of the second subregion, γSecond subregionFor the second subregion unit
Schottky contact region and the ratio of p-type doping sector width, S in area2For the area of the first subregion, S3For the 3rd subregion
Area, γFirst subregionFor Schottky contact region in the first subregion unit area and the ratio of p-type doping sector width.
At lower voltages during break-over of device, electric current flows into N-epi areas by 1, and bottom electrode is flowed out via N-sub.In high electricity
During pressure, p-type doped region 2 (i.e. the section of the 3rd subregion 50) width is maximum, when electric current flows through the bottom of region 2, draws in N-epi areas
When the voltage drop risen reaches the self-built potential of PN junction, PN junction will be opened, to N-epi areas injected minority carrier, carry out conductance tune
System.
First subregion 10, the second subregion 20, the 5th subregion 30, the 4th subregion are made using the structure of the present embodiment
40 γ values have following relation：
γFirst subregion>γSecond subregion>γ5th subregion>γ4th subregion
The design of γ ratios based on above-mentioned each region, device in normal working conditions, each zone current density case
It is as follows：
Because γ values are maximum in first subregion 10, the highest current density in this region；
Because γ values are minimum in 4th subregion 40, the current density in this region is minimum；
Because γ values are placed in the middle in second subregion 20 and the 5th subregion 30, the current density in this region is placed in the middle；
In normal operating conditions, the current density of the 4th subregion 40 is minimum, the electric current that the 4th subregion 40 passes through for device
Small, caloric value is low；The highest current density of first subregion 10, the electric current passed through is big, and caloric value is big.Second subregion 20 is used as residence
Middle region is located between the first subregion 10 and the 5th subregion 30 in the x direction, parallel along y directions and the first subregion 10
Arrangement.By above-mentioned design, make device high in the surrounding current density of easy heat radiation from design, in more difficult middle region of radiating
Domain current density lowers, and in central area, current density is minimized, and reduction device is reached by the uneven distribution of current density
Temperature distributing disproportionation even degree when part works, so as to improve current capacity actual during proper device operation.And
And individually designed the 3rd subregion 50 is all made up of p-type doped region in the devices, can be increased PN junction area, be improved device
The PN diode ratios of part, make device have high current by when, the PN junction for having more many areas, which is opened, to be come by electric current, improves device
Part surge current ability.
It is non-conductive in the case of low-voltage but the 3rd subregion 50 is all made up of p-type doped region, therefore in order to protect
To outside inside card device active region, the ratio of Schottky contact region and p-type doping sector width is in incrementally increase in unit area
Trend is, it is necessary to maximum in the p-type doped region periphery γ values containing larger area.In the region without large area p-type doped region, adopt
Design is laid out with value γ values placed in the middle.So design can be improved while ensureing that device temperature is uniform
Device surge current ability.
In flexible embodiment, first area can be the position of region 10 in Fig. 3, and second area can be 40, region
Put, first area and second area are electrically connected with other regions of the device respectively, and in the unit area of first area
Schottky contact region and the ratio γ of p-type doping sector width are bigger than the γ values of office of the secondth area, and can equally play makes device exterior
Than the internal effect for producing more heat transfer.Therefore the location and shape to first area and second area are not limited, as long as
Meet inside device active region to outside, in unit area Schottky contact region and p-type adulterate sector width ratio in progressively
The design method of increase tendency, for making the device inside to outside current capacity in gradually increase tendency, so that
The device exterior is produced more heat than the device inside, should all fall within protection domain of the present utility model；
In flexible embodiment, 30 ratio γ of the 5th subregion5th subregionThe ratio of the second subregion 20 can be more than or equal to
γSecond subregion.Because in the devices in the region without large area p-type doped region, as long as being entered using value γ values placed in the middle
Row layout designs.So on the whole, device inside to outside current capacity still in gradually increase tendency.Becoming
In logical embodiment, the 3rd subregion includes bar shaped, rectangle, hexagon and circle etc. using one of following shape.As long as by
The p-type doped region composition of large area, can make device improve surge current ability, be not intended to limit specific shape.
Embodiment two
Other three kinds of variants of the present utility model are respectively illustrated as shown in Fig. 6, Fig. 7, Fig. 8, are carried out by taking Fig. 6 as an example
Explanation.First area in Fig. 6 is region 10A, and second area includes region 40A and region 30A, wherein second area and first
Region is directly electrically connected upwards in X-axis method, is electrically connected in the Y-axis direction by other regions of device, and first area
Unit area in Schottky contact region and p-type adulterate sector width ratio γ than office of the secondth area γ values greatly.Region in Fig. 6
30A is corresponding 5th subregion of embodiment one, and 40A is corresponding 4th subregion of embodiment one, wherein the 4th subregion 40A
Structure for large area p-type doped region with along the parallel regularly arranged bar shaped Schottky contact region of X-axis, the 4th subregion 40A
Entirety have a rectangular shape；5th subregion 30A structure is along the parallel regularly arranged bar shaped Schottky contact region of X-axis and P
Type doped region, the 5th subregion 30A is in integrally hollow four sides convex shape, in the 4th subregion 40A and the 5th subregion 30A
The basic cell structure shape of Schottky contact region is similar.This kind of mode of texturing can equally make the unit area of the 4th subregion
Interior Schottky contact region and the ratio γ of p-type doping sector width4th subregionLess than the γ of the 5th subregion5th subregion, and γ4th subregion
And γ5th subregionThe γ values of respectively less than outside surrounding, so that being minimized in central area current density, in making radiating more difficult
Portion's zone current density lowers.In the figure 7, in the 4th subregion 40B and the 5th subregion 30B Schottky contact region it is substantially single
Meta structure is that the structure and shape in other regions are identical with Fig. 6 embodiments along Y-axis parallel bar shaped；In fig. 8, the 4th sub-district
The basic cell structure of Schottky contact region is hexagon, the structure and shape in other regions in domain 40C and the 5th subregion 30C
It is identical with Fig. 6 embodiments.
Above content is to combine specific/preferred embodiment further detailed description of the utility model, no
It can assert that specific implementation of the present utility model is confined to these explanations.For the common skill of the utility model art
For art personnel, without departing from the concept of the premise utility, it can also make to the embodiment that these have been described
Some replacements or modification, and these are substituted or variant should all be considered as belonging to protection domain of the present utility model.
Claims (10)
1. a kind of wide band gap semiconductor device, including terminal structure area, active area and the active area and the terminal structure
Transitional region between area, it is characterised in that the active area includes first area and second area, the first area is close
And/or positioned at the device surrounding, the second area is close and/or positioned at the device center, the first area and institute
State second area directly to electrically connect, and/or electrically connect with other regions of the device respectively；The unit plane of the first area
Schottky contact region and the ratio γ of p-type doping sector width in productFirst areaThan schottky junctions in the unit area of the second area
Touch area and the ratio γ of p-type doping sector widthSecond areaGreatly, for make the device inside to outside current capacity be in by
Cumulative main trend, so that the device exterior produces more heat than the device inside.
2. wide band gap semiconductor device as claimed in claim 1, it is characterised in that the first area is additionally provided with the 3rd sub-district
Domain, the first area is included close to the first subregion of the 3rd subregion and away from the 3rd subregion accordingly
Second subregion, the 3rd subregion Central Symmetry is distributed in the device both sides, and the 3rd subregion is all mixed by p-type
Miscellaneous district's groups are into the ratio γ of first subregionFirst subregionIt is maximum.
3. wide band gap semiconductor device as claimed in claim 2, it is characterised in that the second area includes being located at the device
4th subregion at part center and the 5th subregion close to the device center, the ratio γ of the 4th subregion4th subregion
Less than the ratio γ of the 5th subregion5th subregion, and γ4th subregionAnd γ5th subregionThe ratio of respectively less than outside surrounding
γ。
4. wide band gap semiconductor device as claimed in claim 3, it is characterised in that the ratio of second subregion
γSecond subregionWith the ratio γ of the 5th subregion5th subregionEach region of the device the ratio γ in the device
The γ values size sequence in each region of part is placed in the middle, for still meeting inside in the region without large area p-type doped region in the devices
To requirement of the outside current capacity in gradually increase tendency.
5. wide band gap semiconductor device as claimed in claim 4, it is characterised in that the ratio of the 5th subregion
γ5th subregionLess than the ratio γ of second subregionSecond subregion。
6. wide band gap semiconductor device as claimed in claim 5, it is characterised in that constitute first subregion, the second son
The Schottky contact region in region, the 4th subregion and the 5th subregion can include bar shaped, rectangle, six sides using one of following shape
Shape and circle etc.；The p-type doped region for constituting first subregion, the second subregion, the 4th subregion and the 5th subregion can
Bar shaped, rectangle, hexagon and circle etc. are included using one of following shape；3rd subregion can be using one of following shape
Including bar shaped, rectangle, hexagon and circle etc..
7. wide band gap semiconductor device as claimed in claim 6, it is characterised in that the structure of first subregion is alternating
The regularly arranged Schottky contact region of strip first and the first p-type doped region；The structure of second subregion is alternately rule
The Schottky contact region of strip first of arrangement and the second p-type doped region, first Schottky contact region is in device plane X-axis side
Upward width is all identical, and second subregion is distributed in the both sides of device center, and overall up and down is in concave shape respectively；Described
Three subregions are six area identical rectangular areas.
8. wide band gap semiconductor device as claimed in claim 7, it is characterised in that the structure of the 4th subregion is big face
Long-pending the 3rd p-type doped region and wherein the second Schottky contact region of regular distribution, the entirety of the 4th subregion is in pros
Shape；The structure of 5th subregion is alternately regularly arranged the 3rd Schottky contact region and the second p-type doped region, described
3rd Schottky contact region is identical with the basic cell structure shape of second Schottky contact region, area is same or similar,
The entirety of 5th subregion is in hollow four sides convex shape, second, third described Schottky contact region and described first
Schottky contact region width in device plane X-direction is all identical, in second subregion and the 5th subregion
Second p-type doped region width in device plane X-direction is all identical.
9. wide band gap semiconductor device as claimed in claim 8, it is characterised in that second, third described Schottky contact region
Basic cell structure for square, W2For the p-type doping sector width of the 3rd subregion, WAFor in the 4th subregion
The width of 3rd p-type doped region, WBFor the width of the second p-type doped region in second subregion and the 5th subregion, WC
For the width of the first p-type doped region in first subregion, each several part p-type doped region in the device uses identical doping
Type and with W2>WA>WB>WC。
10. wide band gap semiconductor device as claimed in claim 9, it is characterised in that W2、WA、WB、WCEach numerical approach on dimension
Selection is designed according to following rules：
WA=N*W1+(N+1)*WB,
Wherein, N is integer；W1Known numeric value during for design；But final WAValue should be less than the width of the 5th subregion
Half；
W2=N*W1+(N-1)*WC,
And meet
Wherein, N is integer；WCKnown numeric value during for design；ρ is N-epi sheet resistance rate, and Δ V is PN junction in carborundum
Self-built potential, J is required current densities when the device PN junction is opened；
WB=λ * WC,
And meet S1*γSecond subregion=(S2-3*S3)*γFirst subregion
Wherein, λ spans are 1.5 to 2.5；S1For the area of second subregion, γSecond subregionFor second subregion
Schottky contact region and the ratio of p-type doping sector width, S in unit area2For the area of first subregion, S3To be described
The area of 3rd subregion, γFirst subregionFor Schottky contact region in the first subregion unit area and p-type doping sector width
Ratio.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106847922A (en) * | 2017-01-24 | 2017-06-13 | 深圳基本半导体有限公司 | A kind of wide band gap semiconductor device |
| CN109671825A (en) * | 2017-10-17 | 2019-04-23 | 北京天元广建科技研发有限责任公司 | A kind of polar semiconductor light emitting diode |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106847922A (en) * | 2017-01-24 | 2017-06-13 | 深圳基本半导体有限公司 | A kind of wide band gap semiconductor device |
| CN109671825A (en) * | 2017-10-17 | 2019-04-23 | 北京天元广建科技研发有限责任公司 | A kind of polar semiconductor light emitting diode |
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