CN106847922A - A kind of wide band gap semiconductor device - Google Patents
A kind of wide band gap semiconductor device Download PDFInfo
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- CN106847922A CN106847922A CN201710060247.6A CN201710060247A CN106847922A CN 106847922 A CN106847922 A CN 106847922A CN 201710060247 A CN201710060247 A CN 201710060247A CN 106847922 A CN106847922 A CN 106847922A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 25
- 238000013461 design Methods 0.000 claims abstract description 17
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- 238000013459 approach Methods 0.000 claims description 3
- 230000001186 cumulative effect Effects 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 5
- 230000005684 electric field Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000007323 disproportionation reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
- H01L29/7806—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a Schottky barrier diode
Abstract
A kind of wide band gap semiconductor device of the invention, including the transitional region between terminal structure area, active area and the active area and the terminal structure area, the active area includes first area and second area, the first area is close to and/or positioned at the device surrounding, the second area is close to and/or positioned at the device center, the first area and the second area are directly electrically connected, and/or are electrically connected with other regions of the device respectively；The ratio γ of Schottky contact region and p-type doping sector width in the unit area of the first areaFirst areaThan the ratio γ of the second areaSecond areaGreatly.Present invention employs by inside device active region to outside, the ratio of Schottky contact region and p-type doping sector width is in the method for designing of the trend that incrementally increases in unit area, the uneven degree of device temperature in uniform γ designs is advantageously reduced, such that it is able to improve current capacity actual during proper device operation.
Description
Technical field
It is more particularly to a kind of to reduce non-uniform temperature when device works the present invention relates to a kind of wide band gap semiconductor device
The device of degree.
Background technology
The technology that each major company uses at present is JBS (junction barrier schottkky) Junction Barrier Schottky
Solve Schottky with MPS (merged PiN schottky) causes reverse leakage current to be increased dramatically due to being influenceed by electric field
Problem.The main p-type doped region using plane forms PN junction in JBS and MPS structures, when device bears reversely pressure-resistant, will
Point of maximum electric field is shifted, and makes it away from Schottky contacts, so as to reach the influence of shielding Electric Field on Surface Schottky, reduces device
Reverse leakage current.Compared with JBS structure, MPS structures are more excellent, and current major silicon carbide diode companies progressively use MPS
Structure carrys out instead preceding JBS structure.For MPS structures, the positive contact of its structure is mixed by schottky junction part and p-type
Miscellaneous area collectively constitutes.And using even structure be Schottky contact region identical with the width ratio of p-type doped region in prior art
It is designed, this can make device inside and outside produce identical heat.Heat in the middle of device is only shed by heat sink, the heat of surrounding
Both by heat sink, carry out heat radiation also by device edge surface and shed.So result in device middle portion temperature high, ambient temperature
Low situation.Non-uniform temperature causes device carriers mobility uneven, reduces the actual current capacity of device.
Particularly in the device of high current specification, because device size is big, the temperature that the heat radiation of device edge causes is uneven brighter
It is aobvious.
Device at lower voltages, is opened by Schottky and bears forward current.Electric current increases, and forward voltage drop increases to PN junction and opens
When opening magnitude of voltage, PN junction part just turns on.During generation current surge, electric current is undertaken by the unlatching of PN junction part.Normally make
Used time, is to undertake electric current by schottky portion.Therefore, in order to further reduce forward voltage drop during diode current flow, need
Improve the schottky portion in device.And in order to improve the surge capacity of device, it is necessary to PN junction area in improving device, that is, carry
The p-type doped region area of its composition high.It is nonconducting and p-type doped region is in normal operation, that is, under low-voltage, is device
One of temperature influence factor during part normal work.So when the surge capacity of device is improved, how to set p-type doped region
It is exactly a problem for needing to solve that position reduces non-uniform temperature degree when device works simultaneously.
The content of the invention
In order to solve the above technical problems, the present invention proposes a kind of wide band gap semiconductor device, device temperature is advantageously reduced
The uneven degree of degree.
Therefore, the present invention is adopted the following technical scheme that：
A kind of wide band gap semiconductor device, including terminal structure area, active area and the active area and the terminal knot
Transitional region between structure area, the active area includes first area and second area, and the first area is close to and/or is located at
The device surrounding, the second area is close to and/or positioned at the device center, the first area and the second area
Directly electrically connect, and/or electrically connect with other regions of the device respectively；Schottky in the unit area of the first area
The ratio γ of contact zone and p-type doping sector widthFirst areaThan Schottky contact region and p-type in the unit area of the second area
The ratio γ of doping sector widthSecond areaGreatly, for making the device inside to outside current capacity become in gradually increase
Gesture, so that the device exterior produces more heat than the device inside.
Further, the first area is additionally provided with the 3rd subregion, and the first area is included near described accordingly
First subregion of the 3rd subregion and the second subregion away from the 3rd subregion, the 3rd subregion Central Symmetry
The device both sides are distributed in, the 3rd subregion is all made up of p-type doped region, the ratio of first subregion
γFirst subregionIt is maximum.
Further, the second area is included positioned at the 4th subregion of the device center and in the device
5th subregion of the heart, the ratio γ of the 4th subregion4th subregionLess than the ratio γ of the 5th subregion5th subregion, and
And γ4th subregionAnd γ5th subregionThe ratio γ of respectively less than outside surrounding.
Further, the ratio γ of second subregionSecond subregionWith the ratio γ of the 5th subregion5th subregion
γ value size sequences of the ratio γ in each region of the device in each region of the device is placed in the middle, for existing in the devices
The region for not having large area p-type doped region still meets requirement of the internal current capacity to outside in gradually increase tendency.
Further, the ratio γ of the 5th subregion5th subregionLess than the ratio γ of second subregionSecondSub-district
Domain.
Further, the Schottky of first subregion, the second subregion, the 4th subregion and the 5th subregion is constituted
Contact zone can be using one of following shape including bar shaped, rectangle, hexagon and circle etc.；Constitute first subregion, second
The p-type doped region of subregion, the 4th subregion and the 5th subregion can include bar shaped, rectangle, six sides using one of following shape
Shape and circle etc.；3rd subregion can be using one of following shape including bar shaped, rectangle, hexagon and circle etc..
Further, the structure of first subregion is the alternately regularly arranged Schottky contact region of strip first and the
One p-type doped region；The structure of second subregion is the alternately regularly arranged Schottky contact region of strip first and the second p-type
Doped region, first Schottky contact region width in device plane X-direction is all identical, and second subregion is distributed in
The both sides of device center, overall up and down is in respectively concave shape；3rd subregion is six area identical rectangular areas.
Further, the structure of the 4th subregion is the 3rd p-type doped region and wherein regular distribution of large area
Second Schottky contact region, the entirety of the 4th subregion has a rectangular shape；The structure of the 5th subregion is advised to replace
The 3rd Schottky contact region for then arranging and the second p-type doped region, the 3rd Schottky contact region and second Schottky
The basic cell structure shape of contact zone is identical, area is same or similar, and the entirety of the 5th subregion is in hollow four sides
Convex shape, described second, third Schottky contact region and first Schottky contact region are wide in device plane X-direction
Degree is all identical, and the second p-type doped region in second subregion and the 5th subregion is in device plane X-direction
Upper width is all identical.
Further, the basic cell structure of second, third Schottky contact region is square, W2It is the described 3rd
The p-type doping sector width of subregion, WAIt is the width of the 3rd p-type doped region in the 4th subregion, WBIt is second sub-district
The width of the second p-type doped region, W in domain and the 5th subregionCIt is the width of the first p-type doped region in first subregion
Degree, each several part p-type doped region in the device is using identical doping type and with W2>WA>WB>WC。
Further, W2、WA、WB、WCEach numerical approach on dimension be designed selection according to following rules：
WA=N*W1+(N+1)*WB,
Wherein, N is integer；W1Known numeric value during for design；But final WAValue should be less than the 5th subregion
The half of width；
W2=N*W1+(N-1)*WC,
And meet
Wherein, N is integer；WCKnown numeric value during for design；ρ is the sheet resistance rate of N-epi, and Δ V is in carborundum
The self-built potential of PN junction, J is required current densities when the device PN junction is opened；
WB=λ * WC,
And meet S1*γSecond subregion=(S2-3*S3)*γFirst subregion
Wherein, λ spans are 1.5 to 2.5；S1It is the area of the second subregion, γSecond subregionIt is the second subregion unit
The ratio of Schottky contact region and p-type doping sector width, S in area2It is the area of the first subregion, S3It is the 3rd subregion
Area, γFirst subregionIt is Schottky contact region in the first subregion unit area and the ratio of p-type doping sector width.
The beneficial effects of the invention are as follows：Device design in employ by inside device active region to outside, in unit area
Schottky contact region and the method for designing that the ratio of p-type doping sector width is in the trend that incrementally increases, make the pole of silicon carbide schottky two
, in forward conduction, device middle part current density is small, and surrounding current density is big, advantageously reduces in uniform γ designs for tube device
The uneven degree of device temperature, such that it is able to improve current capacity actual during proper device operation.
Some preferred embodiments of the invention also have following beneficial effect：The 3rd individually designed subregion in the devices
All be made up of p-type doped region, therefore in order to ensure to outside inside device active region, in unit area Schottky contact region with
The ratio of p-type doping sector width is in incrementally increase trend, it is necessary to maximum in the p-type doped region periphery γ values containing larger area.
In the region without large area p-type doped region, design is laid out using value γ values placed in the middle.So design can be with
Increase PN junction area, improve the PN diode ratios of device, make device when there is high current to pass through, there is the PN junction of more many areas
Open and come by electric current, improve device surge current ability, while still meeting device inside to outside current lead-through
Ability is in the requirement of gradually increase tendency, it is ensured that device temperature is uniform.
Brief description of the drawings
Fig. 1 is the basic cell structure figure of wide band gap semiconductor device section in the prior art；
Fig. 2 is a kind of horizontal plane structure chart of wide band gap semiconductor device that the embodiment of the present invention one is provided；
Fig. 3 is a kind of horizontal surface areas figure of wide band gap semiconductor device that the embodiment of the present invention one is provided；
Fig. 4 is a kind of wide band gap semiconductor device of the offer of the embodiment of the present invention one along the structure chart of A-A ' directional profiles；
Fig. 5 is a kind of wide band gap semiconductor device of the offer of the embodiment of the present invention one along the structure chart of B-B ' directional profiles.
Fig. 6 is the horizontal surface areas figure of the first wide band gap semiconductor device that the embodiment of the present invention two is provided；
Fig. 7 is the horizontal surface areas figure of second wide band gap semiconductor device that the embodiment of the present invention two is provided；
Fig. 8 is the horizontal surface areas figure of the third wide band gap semiconductor device that the embodiment of the present invention two is provided.
Specific embodiment
Fig. 1 shows the basic cell structure of device cross-section in the prior art, and wherein N-epi and N-sub is that have the
The region of one type doping type；301 is p-type doped region, is the region with Second-Type doping type；101 is Schottky contacts
Area；401 and 501 is contact electrode.
The operation principle of prior art is：When forward voltage is applied between electrode 401 and electrode 501, when forward voltage increases
When greatly to about 0.8V, the Schottky diode formed by Schottky contact region 101 is opened, and begins to turn on electric current, electric current by
Electrode 401 is flowed into, and by Schottky contact region 101, by N-epi areas and N-sub areas, is flowed out by electrode 501, now electrode
Electric current between 401 and 501 is turned on by Schottky contact region 101.As forward voltage drop increases, when p-type doped region 301
When PN junction voltage difference and N-epi between reaches about 3V, the PN conductings between p-type doped region 301 and N-epi, now by electrode
401, p-type doped region 301, N-epi, the PN diodes that N-sub and electrode 501 are formed with by electrode 401, Schottky contact region
The common conducting electric current of Schottky diode that 101, N-epi, N-sub and electrode 501 are formed.
As shown in figure 1, the ratio row of the width of Schottky contact region 101 and the width of p-type doped region 301 in definition unit structure
For：
γ=Wn/Wp
When γ is smaller, in equal area, the schottky area of device reduces, under proper device operation, current capacity
Decline；Corresponding PN junction area increases, and is conducive to device when there is current surge, has more PN diode sections to undertake
Surge current.γ gets over hour, and the surge current ability of device increases.When γ is bigger, schottky area increase will be favourable
In increasing device current capacity in normal working conditions.
With reference to specific embodiment and compare accompanying drawing the present invention be described in further detail, it should be emphasised that,
What the description below was merely exemplary, rather than in order to limit the scope of the present invention and its application.
Embodiment one
It is as shown in Figures 2 and 3 a kind of wide band gap semiconductor device of preferred embodiment of the present invention offer, terminal structure area
4 can be any one terminal structure for meeting the pressure-resistant demand of device, such as multiple field limiting rings, field limiting ring extra show plate, or laterally become
The structure of doping, ties the structure of termination extension.Region 5 is the transition between device inside active area and outer terminal structure area 4
Region, is made up of p-type doped region.The active of the device inside divides into first area and second area, and first area can be
Region 10 and/or region 20, second area can be region 40 and/or region 30.In the present embodiment, in order that the device
More detailed division has been done in first area and second area by the internal current capacity to outside in gradually increase tendency,
Therefore first area includes region 10 and region 20, and second area includes region 40 and region 30, first area and second area
Directly electrically connect.Wherein, first area is also individually provided with the 3rd subregion 50, and accordingly, first area is included near the 3rd son
First subregion 10 and the second subregion 20 away from the 3rd subregion 50 in region 50；Second area includes being located at device center
The 4th subregion 40 and near device center the 5th subregion 30.
The structure (without the area shown in region 50) of the first subregion 10 is the alternately regularly arranged Xiao Te of strip first
Base contact zone 1A and the first p-type doped region 3C；The structure of the second subregion 20 is the alternately regularly arranged Schottky of strip first
Contact zone 1A and the second p-type doped region 3B, and the second subregion 20 is distributed in the both sides of device center, it is overall up and down to be in respectively
Concave shape；Threeth p-type doped region 3A and wherein square the second of regular distribution of the structure of the 4th subregion 40 for large area
Schottky contact region 1C, the entirety of the 4th subregion 40 has a rectangular shape；The structure of the 5th subregion 30 is alternately regularly arranged
The 3rd Schottky contact region 1B and the second p-type doped region 3B, it is in hollow four sides convex shape that the 5th subregion 30 is overall.Its
In, the basic cell structure shape and area of the 3rd Schottky contact region 1B and the second Schottky contact region 1C are all identical, and first
Schottky contact region 1A, the second Schottky contact region 1C and the 3rd Schottky contact region the 1B width in device plane X-direction
Identical, with n-type doping area directly contact in device profile, the second p-type in the second subregion 20 and the 5th subregion 30 is mixed
Miscellaneous area 3B width in device plane X-direction is identical.3rd subregion 50 is six area identical rectangular areas, and center
Device both sides are symmetrically distributed in, the 3rd subregion is all made up of p-type doped region；Reference 2,3A, 3B, 3C is P in Fig. 2
Type doped region, above-mentioned 4 p-type doped regions are drawn using identical doping type and by Ohmic electrode, but width not phases
Together.And the width of Schottky contact region 1A, 1B, the 1C between p-type doped region is all identical, the table of reference 1 is used in Fig. 4, Fig. 5
Show.
It is respectively along A-A ' directions, the structure chart of B-B ' directional profiles as shown in Figure 4, Figure 5, wherein each peak width W2、
WA、WB、WCP-type doped region in the 3rd subregion 50, the 4th subregion 40, the 5th subregion 30, the first subregion 10 is corresponded to respectively
Width.W2、WA、WB、WCEach numerical approach on dimension be designed selection according to following rules：
WA=N*W1+(N+1)*WB,
Wherein, N is integer；W1Known numeric value during for design；But final WAValue should be less than the 5th subregion
The half of width；
W2=N*W1+(N-1)*WC,
And meet
Wherein, N is integer；WCKnown numeric value during for design；ρ is the sheet resistance rate of N-epi, and Δ V is in carborundum
The self-built potential of PN junction, J is required current densities when the device PN junction is opened；
WB=λ * WC,
And meet S1*γSecond subregion=(S2-3*S3)*γFirst subregion
Wherein, λ spans are 1.5 to 2.5；S1It is the area of the second subregion, γSecond subregionIt is the second subregion unit
The ratio of Schottky contact region and p-type doping sector width, S in area2It is the area of the first subregion, S3It is the 3rd subregion
Area, γFirst subregionIt is Schottky contact region in the first subregion unit area and the ratio of p-type doping sector width.
At lower voltages during break-over of device, electric current flows into N-epi areas by 1, and bottom electrode is flowed out via N-sub.In electricity high
During pressure, p-type doped region 2 (i.e. the section of the 3rd subregion 50) width is maximum, when electric current flows through the bottom of region 2, draws in N-epi areas
When the voltage drop for rising reaches the self-built potential of PN junction, PN junction will be opened, and to N-epi areas injected minority carrier, carry out conductance tune
System.
First subregion 10, the second subregion 20, the 5th subregion 30, the 4th subregion are made using the structure of the present embodiment
40 γ values have following relation：
γFirst subregion>γSecond subregion>γ5th subregion>γ4th subregion
The design of the γ ratios based on above-mentioned each region, device in normal working conditions, each zone current density case
It is as follows：
Because γ values are maximum in first subregion 10, the highest current density in this region；
Because γ values are minimum in 4th subregion 40, the current density in this region is minimum；
Because γ values are placed in the middle in second subregion 20 and the 5th subregion 30, the current density in this region is placed in the middle；
In normal operating conditions, the current density of the 4th subregion 40 is minimum, the electric current that the 4th subregion 40 passes through for device
Small, caloric value is low；The highest current density of first subregion 10, the electric current for passing through is big, and caloric value is big.Second subregion 20 is used as residence
Middle region is located between the first subregion 10 and the 5th subregion 30 in the x direction, parallel with the first subregion 10 along y directions
Arrangement.By above-mentioned design, make device high in the surrounding current density of easy heat radiation from design, in more difficult middle region of radiating
Domain current density lowers, and in central area, current density is minimized, and reduction device is reached by the uneven distribution of current density
Temperature distributing disproportionation even degree when part works, such that it is able to improve current capacity actual during proper device operation.And
And individually designed the 3rd subregion 50 is all made up of p-type doped region in the devices, can increase PN junction area, improves device
The PN diode ratios of part, make device when there is high current to pass through, and the PN junction for having more many areas is opened and, by electric current, improves device
Part surge current ability.
But the 3rd subregion 50 is all made up of p-type doped region, non-conductive in the case of low-voltage, therefore in order to protect
To outside inside card device active region, Schottky contact region and the ratio of p-type doping sector width are in incrementally increase in unit area
Trend is, it is necessary to maximum in the p-type doped region periphery γ values containing larger area.In the region without large area p-type doped region, adopt
Design is laid out with value γ values placed in the middle.So design can improve while ensureing that device temperature is uniform
Device surge current ability.
In flexible embodiment, first area can be the position of region 10 in Fig. 3, and second area can be 40, region
Put, first area and second area are electrically connected with other regions of the device respectively, and in the unit area of first area
Schottky contact region is bigger than the γ values of office of the secondth area with the ratio γ of p-type doping sector width, and can equally play makes device exterior
Than the effect that inside produces more heat transfer.Therefore the location and shape to first area and second area are not limited, as long as
Meet by, to outside, Schottky contact region and the ratio of p-type doping sector width are in progressively in unit area inside device active region
The method for designing of increase tendency, for making the device inside to outside current capacity in gradually increase tendency, so that
The device exterior is produced more heat than the device inside, should all fall under the scope of the present invention；Becoming
In logical embodiment, 30 ratio γ of the 5th subregion5th subregionThe ratio of the second subregion 20 can be more than or equal to
γSecond subregion.Because in the devices in the region without large area p-type doped region, as long as being entered using a value γ value placed in the middle
Row layout designs.So on the whole, device inside to outside current capacity still in gradually increase tendency.Becoming
In logical embodiment, the 3rd subregion is using one of following shape including bar shaped, rectangle, hexagon and circle etc..As long as by
The p-type doped region composition of large area, can make device improve surge current ability, be not intended to limit specific shape.
Embodiment two
Other three kinds of variants of the invention are respectively illustrated as shown in Fig. 6, Fig. 7, Fig. 8, is said by taking Fig. 6 as an example
It is bright.First area in Fig. 6 is region 10A, and second area includes region 40A and region 30A, wherein second area and the firstth area
Domain directly electrically connects upwards in X-axis method, is electrically connected by other regions of device in the Y-axis direction, and first area
Schottky contact region is bigger than the γ values of office of the secondth area with the ratio γ of p-type doping sector width in unit area.Region in Fig. 6
30A is corresponding 5th subregion of embodiment one, and 40A is corresponding 4th subregion of embodiment one, wherein the 4th subregion 40A
Structure for large area p-type doped region with along the parallel regularly arranged bar shaped Schottky contact region of X-axis, the 4th subregion 40A
Entirety have a rectangular shape；The structure of the 5th subregion 30A is along the parallel regularly arranged bar shaped Schottky contact region of X-axis and P
Type doped region, the 5th subregion 30A is in integrally hollow four sides convex shape, in the 4th subregion 40A and the 5th subregion 30A
The basic cell structure shape of Schottky contact region is similar.This kind of mode of texturing can equally make the unit area of the 4th subregion
Interior Schottky contact region and the ratio γ of p-type doping sector width4th subregionLess than the γ of the 5th subregion5th subregion, and γ4th subregion
And γ5th subregionThe γ values of respectively less than outside surrounding, so that be minimized in central area current density, in making radiating more difficult
Portion's zone current density lowers.In the figure 7, in the 4th subregion 40B and the 5th subregion 30B Schottky contact region it is substantially single
Meta structure is that, along the parallel bar shaped of Y-axis, the structure and shape in other regions are identical with Fig. 6 embodiments；In fig. 8, the 4th sub-district
The basic cell structure of Schottky contact region is hexagon, the structure and shape in other regions in domain 40C and the 5th subregion 30C
It is identical with Fig. 6 embodiments.
Above content is to combine specific/preferred embodiment further description made for the present invention, it is impossible to recognized
Fixed specific implementation of the invention is confined to these explanations.For general technical staff of the technical field of the invention,
Without departing from the inventive concept of the premise, its implementation method that can also have been described to these makes some replacements or modification,
And these are substituted or variant should all be considered as belonging to protection scope of the present invention.
Claims (10)
1. a kind of wide band gap semiconductor device, including terminal structure area, active area and the active area and the terminal structure
Transitional region between area, it is characterised in that the active area includes first area and second area, the first area is close to
And/or positioned at the device surrounding, the second area is close to and/or positioned at the device center, the first area and institute
State second area directly to electrically connect, and/or electrically connect with other regions of the device respectively；The unit plane of the first area
The ratio γ of Schottky contact region and p-type doping sector width in productFirst areaThan schottky junctions in the unit area of the second area
Touch the ratio γ in area and p-type doping sector widthSecond areaGreatly, for make the device inside to outside current capacity be in by
Cumulative main trend, so that the device exterior produces more heat than the device inside.
2. wide band gap semiconductor device as claimed in claim 1, it is characterised in that the first area is additionally provided with the 3rd sub-district
Domain, the first area is included near the first subregion of the 3rd subregion and away from the 3rd subregion accordingly
Second subregion, the 3rd subregion Central Symmetry is distributed in the device both sides, and the 3rd subregion is all mixed by p-type
Miscellaneous district's groups are into the ratio γ of first subregionFirst subregionIt is maximum.
3. wide band gap semiconductor device as claimed in claim 2, it is characterised in that the second area includes being located at the device
4th subregion at part center and the 5th subregion near the device center, the ratio γ of the 4th subregion4th subregion
Less than the ratio γ of the 5th subregion5th subregion, and γ4th subregionAnd γ5th subregionThe ratio of respectively less than outside surrounding
γ。
4. wide band gap semiconductor device as claimed in claim 3, it is characterised in that the ratio of second subregion
γSecond subregionWith the ratio γ of the 5th subregion5th subregionEach region of the device the ratio γ in the device
The γ values size sequence in each region of part is placed in the middle, for still meeting inside in the region without large area p-type doped region in the devices
It is in the requirement of gradually increase tendency to outside current capacity.
5. wide band gap semiconductor device as claimed in claim 4, it is characterised in that the ratio of the 5th subregion
γ5th subregionLess than the ratio γ of second subregionSecond subregion。
6. wide band gap semiconductor device as claimed in claim 5, it is characterised in that constitute first subregion, the second son
The Schottky contact region in region, the 4th subregion and the 5th subregion can include bar shaped, rectangle, six sides using one of following shape
Shape and circle etc.；The p-type doped region for constituting first subregion, the second subregion, the 4th subregion and the 5th subregion can
Using one of following shape including bar shaped, rectangle, hexagon and circle etc.；3rd subregion can be using one of following shape
Including bar shaped, rectangle, hexagon and circle etc..
7. wide band gap semiconductor device as claimed in claim 6, it is characterised in that the structure of first subregion is to replace
The regularly arranged Schottky contact region of strip first and the first p-type doped region；The structure of second subregion is alternately regular
The Schottky contact region of strip first of arrangement and the second p-type doped region, first Schottky contact region is in device plane X-axis side
Upward width is all identical, and second subregion is distributed in the both sides of device center, and overall up and down is in respectively concave shape；Described
Three subregions are six area identical rectangular areas.
8. wide band gap semiconductor device as claimed in claim 7, it is characterised in that the structure of the 4th subregion is big face
Long-pending the 3rd p-type doped region and wherein the second Schottky contact region of regular distribution, the entirety of the 4th subregion is in pros
Shape；The structure of the 5th subregion is alternately regularly arranged the 3rd Schottky contact region and the second p-type doped region, described
3rd Schottky contact region is identical with the basic cell structure shape of second Schottky contact region, area is same or similar,
The entirety of the 5th subregion is in hollow four sides convex shape, described second, third Schottky contact region and described first
Schottky contact region width in device plane X-direction is all identical, in second subregion and the 5th subregion
Second p-type doped region width in device plane X-direction is all identical.
9. wide band gap semiconductor device as claimed in claim 8, it is characterised in that described second, third Schottky contact region
Basic cell structure for square, W2It is the p-type doping sector width of the 3rd subregion, WAFor in the 4th subregion
The width of the 3rd p-type doped region, WBIt is the width of the second p-type doped region in second subregion and the 5th subregion, WC
It is the width of the first p-type doped region in first subregion, each several part p-type doped region in the device uses identical doping
Type and with W2>WA>WB>WC。
10. wide band gap semiconductor device as claimed in claim 9, it is characterised in that W2、WA、WB、WCEach numerical approach on dimension
Selection is designed according to following rules：
WA=N*W1+(N+1)*WB,
Wherein, N is integer；W1Known numeric value during for design；But final WAValue should be less than the width of the 5th subregion
Half；
W2=N*W1+(N-1)*WC,
And meet
Wherein, N is integer；WCKnown numeric value during for design；ρ is the sheet resistance rate of N-epi, and Δ V is PN junction in carborundum
Self-built potential, J is required current densities when the device PN junction is opened；
WB=λ * WC,
And meet S1*γSecond subregion=(S2-3*S3)*γFirst subregion
Wherein, λ spans are 1.5 to 2.5；S1It is the area of second subregion, γSecond subregionIt is second subregion
The ratio of Schottky contact region and p-type doping sector width, S in unit area2It is the area of first subregion, S3For described
The area of the 3rd subregion, γFirst subregionIt is Schottky contact region in the first subregion unit area and p-type doping sector width
Ratio.
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