CN206457250U - The shielding construction and encapsulating structure of a kind of sensor - Google Patents
The shielding construction and encapsulating structure of a kind of sensor Download PDFInfo
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- CN206457250U CN206457250U CN201621305467.8U CN201621305467U CN206457250U CN 206457250 U CN206457250 U CN 206457250U CN 201621305467 U CN201621305467 U CN 201621305467U CN 206457250 U CN206457250 U CN 206457250U
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- chip
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- shielding construction
- conducting medium
- sensor
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- 238000010276 construction Methods 0.000 title claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 48
- 239000011248 coating agent Substances 0.000 claims abstract description 45
- 238000000576 coating method Methods 0.000 claims abstract description 45
- 229910000679 solder Inorganic materials 0.000 claims description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 229910021645 metal ion Inorganic materials 0.000 claims description 5
- 239000003292 glue Substances 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 15
- 238000005538 encapsulation Methods 0.000 abstract description 7
- 238000010586 diagram Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Abstract
The utility model discloses a kind of shielding construction of sensor, including substrate, chip, screen layer and conducting medium coating, wherein, chip is arranged on substrate, screen layer is arranged between chip and substrate, conducting medium coating is arranged at chip periphery, and screen layer is electrically connected with conducting medium coating, for being grounded conducting medium coating；Relative to conducting resinl shielding construction of the prior art and metal-back shielding construction, shielding construction in this case can be completed in wafer-level package process, technique is simple, and difficulty is low, efficiency high, and coating uniformity is good, there is good controllability simultaneously, the height of sensor will not be increased, be easy to encapsulation, cost is low, and yields is high.The invention also discloses a kind of encapsulating structure of sensor.
Description
Technical field
The utility model is related to sensor technical field, the shielding construction and encapsulation knot of more particularly to a kind of sensor
Structure.
Background technology
MEMS (MEMS, Micro-Electro-Mechanical System), also referred to as mems
System, micro-system, micromechanics etc., refer to size in several millimeters of even more small high-tech devices, its internal structure is general in micron
Even nanometer scale, is an independent intelligence system.Because it has miniaturization, intelligent, Highgrade integration and can batch
The advantage of production, is widely used to the fields such as electronics, medical science, industry, automobile and Aero-Space.
In the prior art, referring to Fig. 1, Fig. 1 is the structural representation of one of which shielding construction in the prior art, sensing
The encapsulation of device be usually MEMS sensor chip 104 and asic chip 103 are mounted on substrate 101, and be encapsulated in by
In the cavity that substrate 101 and shell 102 are surrounded.Because MEMS sensor chip 104 is easily by external factor such as electromagnetism, heat
Interference, accordingly, it would be desirable to there is the chip of electromagnetic radiation, heat radiation in sensor, such as asic chip 103 is shielded, so that
It is kept apart with MEMS sensor chip 104, the mode of shielding chip typically there are two kinds, and one of which is that conducting resinl shields knot
Structure, as shown in fig. 1, i.e., in the one layer of conducting resinl of outer coating of asic chip 103, forms radome 105, thus realize to electromagnetism and
The shielding of heat, meanwhile, short circuit is caused in order to avoid conducting resinl is flowed between asic chip 103 and substrate 101, in coating conducting resinl
Glue in insulating cement formation insulating barrier 106, this shielding construction must also be filled between asic chip 103 and substrate 101 before
The controllability of water is poor, and shield effectiveness is difficult to ensure that；Another shielding construction is to set a metal-back in the outer cover of asic chip 103
107, referring to Fig. 2, shielding construction schematic diagrames of the Fig. 2 for another sensor in the prior art, this shielding construction technique compared with
For complexity, the difficulty of realization is larger, while can increase the difficulty and cost of encapsulation.
Therefore, how to improve the shielding construction of sensor, make its technique simple, difficulty is low, with stronger controllability, just
In realization, yields is improved, as those skilled in the art's important technological problems urgently to be resolved hurrily.
Utility model content
In view of this, the utility model provides the shielding construction and encapsulating structure of a kind of sensor, makes it to reach
Technique is simple, and difficulty is low, with stronger controllability, is easy to implement, and improves the purpose of yields.
To achieve the above object, the utility model provides following technical scheme：
A kind of shielding construction of sensor, including substrate and the chip that is arranged on the substrate, in addition to be arranged on
Screen layer between the chip and the substrate and the conducting medium coating for being arranged at the chip periphery, the screen layer
Electrically connected with the conducting medium coating, for being grounded the conducting medium coating.
Preferably, the screen layer in a ring, for by the solder joint between the chip and the substrate and the conduction
Medium coating is isolated, and the solder joint is wire solder joint.
Preferably, the screen layer is surrounded by soldered ball or other conductive adhesive glue/glued membranes.
Preferably, the steam vent a relative with the chip is provided with the substrate.
Preferably, the screen layer includes multiple around the circumferentially spaced shielding slab of the chip.
Preferably, the conducting medium coating is metal ion coating.
Preferably, the material of the conducting medium coating is one kind in gold, silver, copper, aluminium, nickel.
Preferably, the chip passes through wire soldered ball and the substrate connection.
A kind of encapsulating structure of sensor, including substrate, shell, MEMS sensor chip and asic chip, the base
Plate surrounds cavity with the shell, and the MEMS sensor chip and the asic chip are mounted on the substrate and be located at
In the cavity, and the MEMS sensor chip is electrically connected with the asic chip, the asic chip and the substrate it
Between be provided with screen layer, the asic chip periphery is provided with conducting medium coating, and the screen layer is used for the ASIC cores
Solder joint is isolated with the conducting medium coating between piece and the substrate.
It can be seen from the above technical proposal that the shielding construction for the sensor that the utility model is provided, including substrate, core
Piece, screen layer and conducting medium coating, wherein, chip is arranged on substrate, and screen layer is arranged between chip and substrate, is led
Dielectric coated is arranged at chip periphery, and screen layer is electrically connected with conducting medium coating, for being grounded conducting medium coating；Phase
For conducting resinl shielding construction of the prior art and metal-back shielding construction, the shielding construction in this case can be sealed in chip-scale
Fill in process and complete, technique is simple, and difficulty is low, efficiency high, and coating uniformity is good, while there is good controllability,
The height of sensor will not be increased, be easy to encapsulation, cost is low, yields is high.
Brief description of the drawings
, below will be to embodiment in order to illustrate more clearly of the utility model embodiment or technical scheme of the prior art
Or the accompanying drawing used required in description of the prior art is briefly described, it should be apparent that, drawings in the following description are only
It is some embodiments of the present utility model, for those of ordinary skill in the art, is not paying the premise of creative work
Under, other accompanying drawings can also be obtained according to these accompanying drawings.
Fig. 1 is a kind of shielding construction schematic diagram of sensor in the prior art；
Fig. 2 is the shielding construction schematic diagram of another sensor in the prior art；
The structural representation of the shielding construction for the sensor that Fig. 3 provides for the utility model embodiment；
The structural representation of the encapsulating structure for the sensor that Fig. 4 provides for the utility model embodiment.
Embodiment
The utility model provides the shielding construction and encapsulating structure of a kind of sensor, makes its technique simple to reach,
Difficulty is low, with stronger controllability, is easy to implement, and improves the purpose of yields.
Below in conjunction with the accompanying drawing in the utility model embodiment, the technical scheme in the utility model embodiment is carried out
Clearly and completely describe, it is clear that described embodiment is only a part of embodiment of the utility model, rather than whole
Embodiment.Based on the embodiment in the utility model, those of ordinary skill in the art are not under the premise of creative work is made
The every other embodiment obtained, belongs to the scope of the utility model protection.
Referring to Fig. 3, the structural representation of the shielding construction for the sensor that Fig. 3 provides for the utility model embodiment.
A kind of shielding construction for sensor that the utility model embodiment is provided, including substrate 201, chip 202, screen layer
203 and conducting medium coating 204.
Wherein, chip 202 is arranged on substrate 201, and screen layer 203 is arranged between chip 202 and substrate 201, conductive
Medium coating 204 is arranged at the periphery of chip 202, and screen layer 203 is electrically connected with conducting medium coating 204, for making conducting medium
Coating 204 is grounded.
Compared with prior art, the shielding construction for the sensor that the utility model embodiment is provided, can be in chip 202
Completed during level encapsulation process, technique is simple, and difficulty is low, efficiency high, and coating uniformity is good, while having good controllable
Property, the height of sensor will not be increased, be easy to encapsulation, cost is low, yields is high.
Above-mentioned shielding construction can be processed, one of which is first by chip 202 and base in processing using two kinds of processes
Plate 201 is connected, then in the periphery plating last layer conducting medium coating 204 of chip 202, under this process, in order to avoid coating
When conducting medium enter cause short circuit between chip 202 and substrate 201, screen layer 203 can be set to closing annular so that
Solder joint between chip 202 and substrate 201 is isolated with conducting medium coating 204, wherein, solder joint is wire solder joint, further,
In the utility model embodiment, screen layer 203 is surrounded by soldered ball, these soldered balls on the one hand can play closing chip 202 with
Chip 202, on the one hand can further be fixed on substrate 201 and play the work of ground connection by the effect in gap between substrate 201
With.Certainly, the composition of screen layer 203 is not limited only to soldered ball this is a kind of, can also be and is made up of other conductive adhesive glue/glued membranes.
Chip 202 is generally mounted with substrate 201 by the way of welding, and certain heat can be produced during attachment
Air, and in use, chip 202 itself can also generate heat, because this case is plated in the periphery of chip 202 setting metal ion
Layer and bottom are provided with the screen layer 203 of annular, can be unfavorable for the radiating of chip 202 to a certain extent, influence chip 202
Service life, therefore, screen layer 203 in a ring when, the steam vent relative with chip 202 should be also set on substrate 201
201a, so, the hot-air whether produced during attachment, the still heating of itself of chip 202 in use,
Discharge radiating can be carried out by steam vent 201a, so as to protect chip 202, extend its service life.
Certainly, except it is recited above chip 202 and substrate 201 are first fixed into again the process of coating in addition to, can also use
Another process is processed, i.e., be first fixed in the peripheral coating of chip 202 by chip 202 on substrate 201, using this
When process is processed, make chip short circuit without having to worry about conducting medium, therefore, screen layer 203 can not use annular recited above
Structure, but can be using the structure being made up of multiple shielding slabs, multiple shielding slabs are around the circumferentially-spaced arrangement of chip 202.So,
Shielding can either be played a part of, and do not influence the radiating of chip.
The effect of conducting medium coating 204 is that isolating electromagnetism, heat etc. radiates, and can both use metal material system
Make, it would however also be possible to employ nonmetallic materials make, as long as can be conductive, in the utility model embodiment, conducting medium plating
Layer 204 is metal ion coating.
Ion plating is a kind of newest vacuum coating technology grown up in recent ten years, with tack it is good, can plate
The advantages of material is extensive, you can nonmetallic or metal is plated on metal works, also can be in nonmetal plating metal or nonmetallic, very
Plastics, rubber, quartz, ceramics etc. can be extremely plated, in the utility model embodiment, by the way of metal material utilizes ion plating
Metal ion coating is formed in the periphery of chip 202.
Further optimize above-mentioned technical proposal, in the utility model embodiment, the material of conducting medium coating 204 is
One or more mixtures in gold, silver, copper, aluminium, nickel.
In the utility model embodiment, as shown in Figure 3, chip 202 is connected by wire soldered ball 205 with substrate 201.
The utility model embodiment additionally provides a kind of encapsulating structure of sensor, referring to Fig. 4, Fig. 4 is that this practicality is new
The structural representation of the encapsulating structure for the sensor that type embodiment is provided, including substrate 301, shell 306, MEMS sensor chip
305 and asic chip 302, wherein, substrate 301 surrounds cavity, MEMS sensor chip 305 and ASIC cores with shell 306
Piece 302 is mounted on substrate 301 and in cavity, and MEMS sensor chip 305 is electrically connected with asic chip 302, ASIC
Screen layer 303 is provided between chip 302 and substrate 301, the periphery of asic chip 302 is provided with conducting medium coating 304, shielded
Layer 303 is used to isolate solder joint between asic chip 302 and substrate 301 with conducting medium coating 304.
The embodiment of each in this specification is described by the way of progressive, and what each embodiment was stressed is and other
Between the difference of embodiment, each embodiment identical similar portion mutually referring to.
The foregoing description of the disclosed embodiments, enables professional and technical personnel in the field to realize or new using this practicality
Type.A variety of modifications to these embodiments will be apparent for those skilled in the art, determine herein
The General Principle of justice can in other embodiments be realized in the case where not departing from spirit or scope of the present utility model.Cause
This, the utility model is not intended to be limited to the embodiments shown herein, and is to fit to and principles disclosed herein
The most wide scope consistent with features of novelty.
Claims (9)
1. a kind of shielding construction of sensor, including substrate (201) and the chip (202) that is arranged on the substrate (201),
Characterized in that, also including screen layer (203) and the setting being arranged between the chip (202) and the substrate (201)
Conducting medium coating (204) in the chip (202) periphery, the screen layer (203) and the conducting medium coating (204)
Electrical connection, for being grounded the conducting medium coating (204).
2. the shielding construction of sensor according to claim 1, it is characterised in that the screen layer (203) in a ring, is used
Isolate in by the solder joint between the chip (202) and the substrate (201) with the conducting medium coating (204), the weldering
Point is wire solder joint.
3. the shielding construction of sensor according to claim 2, it is characterised in that the screen layer (203) by soldered ball or
Other conductive adhesive glue/glued membranes are surrounded.
4. the shielding construction of sensor according to claim 2, it is characterised in that be provided with the substrate (201) with
The relative steam vent (201a) of the chip (202).
5. the shielding construction of sensor according to claim 1, it is characterised in that the screen layer (203) includes multiple
Around the chip (202) circumferentially spaced shielding slab.
6. the shielding construction of the sensor according to claim any one of 1-5, it is characterised in that the conducting medium coating
(204) it is metal ion coating.
7. the shielding construction of sensor according to claim 6, it is characterised in that the conducting medium coating (204)
Material is one kind in gold, silver, copper, aluminium, nickel.
8. the shielding construction of the sensor according to claim any one of 1-5, it is characterised in that the chip (202) is led to
Wire soldered ball (205) is crossed to be connected with the substrate (201).
9. a kind of encapsulating structure of sensor, including substrate (301), shell (306), MEMS sensor chip (305) and
Asic chip (302), the substrate (301) and the shell (306) surround cavity, the MEMS sensor chip (305) with
And the asic chip (302) is mounted on the substrate (301) and in the cavity, and the MEMS sensor chip
(305) electrically connected with the asic chip (302), it is characterised in that the asic chip (302) and the substrate (301) it
Between be provided with screen layer (303), asic chip (302) periphery is provided with conducting medium coating (304), the screen layer
(303) it is used to isolate solder joint between the asic chip (302) and the substrate with the conducting medium coating (304).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621305467.8U CN206457250U (en) | 2016-11-30 | 2016-11-30 | The shielding construction and encapsulating structure of a kind of sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621305467.8U CN206457250U (en) | 2016-11-30 | 2016-11-30 | The shielding construction and encapsulating structure of a kind of sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206457250U true CN206457250U (en) | 2017-09-01 |
Family
ID=59692715
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621305467.8U Active CN206457250U (en) | 2016-11-30 | 2016-11-30 | The shielding construction and encapsulating structure of a kind of sensor |
Country Status (1)
| Country | Link |
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| CN (1) | CN206457250U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111115559A (en) * | 2019-11-21 | 2020-05-08 | 青岛歌尔智能传感器有限公司 | Packaging method and packaging structure of micro-electro-mechanical system sensor |
-
2016
- 2016-11-30 CN CN201621305467.8U patent/CN206457250U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111115559A (en) * | 2019-11-21 | 2020-05-08 | 青岛歌尔智能传感器有限公司 | Packaging method and packaging structure of micro-electro-mechanical system sensor |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20200609 Address after: 266104 room 103, 396 Songling Road, Laoshan District, Qingdao, Shandong Province Patentee after: Goer Microelectronics Co.,Ltd. Address before: 266100 Qingdao, Laoshan District, North House Street investment service center room, Room 308, Shandong Patentee before: GOERTEK TECHNOLOGY Co.,Ltd. |
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| TR01 | Transfer of patent right |