CN206865430U - A kind of cermet encapsulates photoelectric switch - Google Patents
A kind of cermet encapsulates photoelectric switch Download PDFInfo
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- CN206865430U CN206865430U CN201720441272.4U CN201720441272U CN206865430U CN 206865430 U CN206865430 U CN 206865430U CN 201720441272 U CN201720441272 U CN 201720441272U CN 206865430 U CN206865430 U CN 206865430U
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- ceramic
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- photoelectric switch
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- cermet
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Abstract
The utility model discloses a kind of cermet to encapsulate photoelectric switch.Including base of ceramic（5）, base of ceramic（5）With cover plate（1）It is tightly connected, base of ceramic（5）Separate unit is inside distributed with；Described separate unit includes cavity（6）, cavity（6）Phototransistor is connected with the metallized area of bottom（4）, cavity（6）Top is connected with ceramic substrate（2）, ceramic substrate（2）In cavity（6）Light-emitting diode chip for backlight unit is connected with the metallized area on the surface of side（3）；Described cavity（6）With ceramic substrate（2）The closing space of formation is vacuum.The utility model has the characteristics of improving isolation voltage, high airtight, high temperature resistant, corrosion-resistant, moistureproof, shielding protection is good, sturdy and durable and Radiation hardness is strong.
Description
Technical field
A kind of photoelectric isolation technology is the utility model is related to, particularly a kind of cermet encapsulation photoelectric switch.
Background technology
Existing photoelectric device, carry out transmitting telecommunication number by medium of light, generally photophore and light-receiving device are encapsulated in same
In plastic casing, isolated to each other with transparent insulator.But it is primarily present that isolation voltage is low, temperature performance is poor, Radiation hardness
The shortcomings that weak.
The content of the invention
The purpose of this utility model is, there is provided a kind of cermet encapsulates photoelectric switch.The utility model has
Improve isolation voltage, high airtight, high temperature resistant, spy corrosion-resistant, moistureproof, shielding protection is good, sturdy and durable and strong Radiation hardness
Point.
The technical solution of the utility model：A kind of cermet encapsulates photoelectric switch, including base of ceramic, ceramic base
Seat is connected with cover plate for sealing, and separate unit is distributed with base of ceramic；Described separate unit includes cavity, the gold of cavity bottom
Phototransistor is connected with categoryization region, is connected with ceramic substrate at the top of cavity, ceramic substrate is in the surface of cavity side
Light-emitting diode chip for backlight unit is connected with metallized area；The closing space that described cavity is formed with ceramic substrate is vacuum.
In foregoing cermet encapsulation photoelectric switch, sealed between described base of ceramic and cover plate for resistance melting welding
Connection.
In foregoing cermet encapsulation photoelectric switch, described cavity bottom is bonded with photoelectricity crystalline substance through conductive silver paste
Body pipe.
In foregoing cermet encapsulation photoelectric switch, the metallized area of described ceramic substrate surface is through conduction
Silver paste is bonded with light-emitting diode chip for backlight unit.
In foregoing cermet encapsulation photoelectric switch, four separate units are distributed with described base of ceramic.
In foregoing cermet encapsulation photoelectric switch, described light-emitting diode chip for backlight unit is Flouride-resistani acid phesphatase device.
Compared with prior art, phototransistor is bonded in the metallization of the cavity bottom of separate unit by the utility model
On region, by light-emitting diode chip for backlight unit bonding on a ceramic substrate, and the space that ceramic substrate is formed with cavity is vacuum；The knot
Structure causes isolating between light-emitting diode chip for backlight unit and phototransistor, by traditional transparent insulator isolation be changed into vacuum every
From effectively increasing isolation voltage；Isolation voltage of the present utility model is up to 2000 more than Vd.c. after measured.
Base of ceramic is connected by the utility model by resistance melting welding with cover plate for sealing, makes having for device high airtight, resistance to
High temperature, it is corrosion-resistant, moistureproof, shielding protection is good and sturdy and durable the advantages of, be used primarily in bad environments, the high boat of reliability requirement
On empty, space equipment.
Light-emitting diode chip for backlight unit of the present utility model is Flouride-resistani acid phesphatase device, effectively improves Radiation hardness.
Brief description of the drawings
Fig. 1 is three-dimensional exploded view of the present utility model；
Fig. 2 is sectional view of the present utility model.
Mark in accompanying drawing for：1- cover plates, 2- ceramic substrates, 3- light-emitting diode chip for backlight unit, 4- phototransistors, 5- ceramics
Pedestal, 6- cavitys.
Embodiment
The utility model is further described with reference to the accompanying drawings and examples, but is not intended as to the utility model
The foundation of limitation.
Embodiment.A kind of cermet encapsulates photoelectric switch, forms as shown in Figure 1-2, including base of ceramic 5, pottery
Porcelain pedestal 5 is tightly connected with cover plate 1, and separate unit is distributed with base of ceramic 5；Described separate unit includes cavity 6, cavity
Phototransistor 4 is connected with the metallized area of 6 bottoms, the top of cavity 6 is connected with ceramic substrate 2, and ceramic substrate 2 is in chamber
Light-emitting diode chip for backlight unit 3 is connected with the metallized area on the surface of the side of body 6；The envelope that described cavity 6 is formed with ceramic substrate 2
It is vacuum to close space.
It is tightly connected between foregoing base of ceramic 5 and cover plate 1 for resistance melting welding.
The foregoing bottom of cavity 6 is bonded with phototransistor 4 through conductive silver paste.
The metallized area on the foregoing surface of ceramic substrate 2 is bonded with light-emitting diode chip for backlight unit 3 through conductive silver paste.
Four separate units are distributed with foregoing base of ceramic 5.
Foregoing light-emitting diode chip for backlight unit 3 is Flouride-resistani acid phesphatase device.
Operation principle：Input loading electric signal makes light-emitting diode chip for backlight unit 3 luminous, and luminous intensity depends on exciting current
Size, this illumination is mapped on phototransistor 4, photoelectric current is generated because of photoelectric effect, turns on output end, so as to switch
External circuit.
Claims (6)
1. a kind of cermet encapsulates photoelectric switch, it is characterised in that：Including base of ceramic（5）, base of ceramic（5）With lid
Plate（1）It is tightly connected, base of ceramic（5）Separate unit is inside distributed with；Described separate unit includes cavity（6）, cavity（6）Bottom
Phototransistor is connected with the metallized area in portion（4）, cavity（6）Top is connected with ceramic substrate（2）, ceramic substrate（2）
In cavity（6）Light-emitting diode chip for backlight unit is connected with the metallized area on the surface of side（3）；Described cavity（6）With ceramics
Substrate（2）The closing space of formation is vacuum.
2. cermet according to claim 1 encapsulates photoelectric switch, it is characterised in that：Described base of ceramic
（5）With cover plate（1）Between for resistance melting welding be tightly connected.
3. cermet according to claim 1 or 2 encapsulates photoelectric switch, it is characterised in that：Described cavity（6）
Bottom is bonded with phototransistor through conductive silver paste（4）.
4. cermet according to claim 1 or 2 encapsulates photoelectric switch, it is characterised in that：Described ceramic base
Piece（2）The metallized area on surface is bonded with light-emitting diode chip for backlight unit through conductive silver paste（3）.
5. cermet according to claim 1 or 2 encapsulates photoelectric switch, it is characterised in that：Described ceramic base
Seat（5）Four separate units are inside distributed with.
6. cermet according to claim 1 or 2 encapsulates photoelectric switch, it is characterised in that：Described luminous two
Pole pipe chip（3）For Flouride-resistani acid phesphatase device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720441272.4U CN206865430U (en) | 2017-04-25 | 2017-04-25 | A kind of cermet encapsulates photoelectric switch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720441272.4U CN206865430U (en) | 2017-04-25 | 2017-04-25 | A kind of cermet encapsulates photoelectric switch |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206865430U true CN206865430U (en) | 2018-01-09 |
Family
ID=60822138
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720441272.4U Active CN206865430U (en) | 2017-04-25 | 2017-04-25 | A kind of cermet encapsulates photoelectric switch |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206865430U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112928072A (en) * | 2021-01-29 | 2021-06-08 | 重庆两江卫星移动通信有限公司 | Gallium nitride field effect transistor irradiation-resistant reinforced packaging device |
-
2017
- 2017-04-25 CN CN201720441272.4U patent/CN206865430U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112928072A (en) * | 2021-01-29 | 2021-06-08 | 重庆两江卫星移动通信有限公司 | Gallium nitride field effect transistor irradiation-resistant reinforced packaging device |
| CN112928072B (en) * | 2021-01-29 | 2023-09-19 | 重庆两江卫星移动通信有限公司 | Packaging device for radiation-resistant reinforcement of gallium nitride field effect transistor |
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