CN206379326U - 离子源 - Google Patents
离子源 Download PDFInfo
- Publication number
- CN206379326U CN206379326U CN201720040857.5U CN201720040857U CN206379326U CN 206379326 U CN206379326 U CN 206379326U CN 201720040857 U CN201720040857 U CN 201720040857U CN 206379326 U CN206379326 U CN 206379326U
- Authority
- CN
- China
- Prior art keywords
- power supply
- filament
- coupled
- feeding unit
- negative electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000605 extraction Methods 0.000 claims abstract description 38
- 238000010438 heat treatment Methods 0.000 claims abstract description 9
- 239000007789 gas Substances 0.000 claims description 30
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 18
- 238000001816 cooling Methods 0.000 claims description 17
- 230000001629 suppression Effects 0.000 claims description 12
- 230000005611 electricity Effects 0.000 claims description 6
- 239000000284 extract Substances 0.000 claims description 5
- 239000000112 cooling gas Substances 0.000 claims description 3
- 239000000110 cooling liquid Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims 1
- 150000002500 ions Chemical class 0.000 abstract description 73
- 238000010884 ion-beam technique Methods 0.000 abstract description 11
- 239000002784 hot electron Substances 0.000 abstract 6
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 14
- 229910015900 BF3 Inorganic materials 0.000 description 7
- -1 IHC Ion Chemical class 0.000 description 6
- 239000007943 implant Substances 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 238000005259 measurement Methods 0.000 description 4
- 238000010891 electric arc Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 2
- 229910000070 arsenic hydride Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910000078 germane Inorganic materials 0.000 description 2
- HJTZHRBGNWZTKK-UHFFFAOYSA-J germanium tetrafluoride Chemical compound [F-].[F-].[F-].[F-].[Ge+4] HJTZHRBGNWZTKK-UHFFFAOYSA-J 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004227 thermal cracking Methods 0.000 description 1
- 230000005619 thermoelectricity Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/022—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/08—Ion sources; Ion guns using arc discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/24—Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for
- H01J37/242—Filament heating power supply or regulation circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Electron Sources, Ion Sources (AREA)
Abstract
Description
Claims (8)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW105114496A TWI550678B (zh) | 2016-05-11 | 2016-05-11 | 離子源及其熱電子產生方法 |
TW105114496 | 2016-05-11 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN206379326U true CN206379326U (zh) | 2017-08-04 |
Family
ID=57445160
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201720040857.5U Active CN206379326U (zh) | 2016-05-11 | 2017-01-13 | 离子源 |
Country Status (3)
Country | Link |
---|---|
KR (1) | KR101899206B1 (zh) |
CN (1) | CN206379326U (zh) |
TW (1) | TWI550678B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111180300A (zh) * | 2018-11-12 | 2020-05-19 | 台湾积体电路制造股份有限公司 | 离子布植设备与其散热构件 |
CN111448638A (zh) * | 2017-12-19 | 2020-07-24 | 瓦里安半导体设备公司 | 离子源的动态温度控制 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9916966B1 (en) * | 2017-01-26 | 2018-03-13 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and method for minimizing thermal distortion in electrodes used with ion sources |
US11270864B2 (en) * | 2020-03-24 | 2022-03-08 | Applied Materials, Inc. | Apparatus and system including extraction optics having movable blockers |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6777686B2 (en) * | 2000-05-17 | 2004-08-17 | Varian Semiconductor Equipment Associates, Inc. | Control system for indirectly heated cathode ion source |
JP3797160B2 (ja) * | 2000-11-09 | 2006-07-12 | 日新イオン機器株式会社 | イオン源およびその運転方法 |
JP4345895B2 (ja) * | 2005-10-20 | 2009-10-14 | 日新イオン機器株式会社 | イオン源の運転方法およびイオン注入装置 |
US7655931B2 (en) * | 2007-03-29 | 2010-02-02 | Varian Semiconductor Equipment Associates, Inc. | Techniques for improving the performance and extending the lifetime of an ion source with gas mixing |
JP4463310B2 (ja) * | 2008-03-07 | 2010-05-19 | 三井造船株式会社 | イオン源 |
KR101747473B1 (ko) * | 2009-10-27 | 2017-06-27 | 엔테그리스, 아이엔씨. | 이온 주입 시스템 및 방법 |
JP5925084B2 (ja) * | 2012-08-28 | 2016-05-25 | 住友重機械イオンテクノロジー株式会社 | イオン生成方法およびイオン源 |
JP6238689B2 (ja) * | 2013-11-13 | 2017-11-29 | 住友重機械イオンテクノロジー株式会社 | イオン生成装置およびイオン生成方法 |
-
2016
- 2016-05-11 TW TW105114496A patent/TWI550678B/zh active
- 2016-06-09 KR KR1020160071698A patent/KR101899206B1/ko active IP Right Grant
-
2017
- 2017-01-13 CN CN201720040857.5U patent/CN206379326U/zh active Active
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111448638A (zh) * | 2017-12-19 | 2020-07-24 | 瓦里安半导体设备公司 | 离子源的动态温度控制 |
CN111448638B (zh) * | 2017-12-19 | 2023-03-28 | 瓦里安半导体设备公司 | 可动态地调整面板温度的离子源及其设备 |
CN111180300A (zh) * | 2018-11-12 | 2020-05-19 | 台湾积体电路制造股份有限公司 | 离子布植设备与其散热构件 |
CN111180300B (zh) * | 2018-11-12 | 2022-10-21 | 台湾积体电路制造股份有限公司 | 离子布植设备与其散热构件 |
Also Published As
Publication number | Publication date |
---|---|
TW201740420A (zh) | 2017-11-16 |
KR20170127333A (ko) | 2017-11-21 |
TWI550678B (zh) | 2016-09-21 |
KR101899206B1 (ko) | 2018-09-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20191029 Address after: Hsinchu City, Taiwan, China Patentee after: Chenshuo International Co.,Ltd. Address before: 19, Lane 185, Xinzhuang street, East District, Xinzhu City Patentee before: Yan juncan |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20240506 Address after: Delaware, USA Patentee after: ENTEGRIS, Inc. Country or region after: U.S.A. Address before: Hsinchu City, Taiwan, China Patentee before: Chenshuo International Co.,Ltd. Country or region before: TaiWan, China |
|
TR01 | Transfer of patent right |